CN105932019A - Large power LED structure adopting COB packaging - Google Patents

Large power LED structure adopting COB packaging Download PDF

Info

Publication number
CN105932019A
CN105932019A CN201610301123.8A CN201610301123A CN105932019A CN 105932019 A CN105932019 A CN 105932019A CN 201610301123 A CN201610301123 A CN 201610301123A CN 105932019 A CN105932019 A CN 105932019A
Authority
CN
China
Prior art keywords
power led
radiator
cob
led structure
high power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610301123.8A
Other languages
Chinese (zh)
Inventor
周伟
刘志强
张小六
张先伟
赵建明
邹泽亚
周杨昆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chengdu Sigma Photoelectric Technology Co ltd
University of Electronic Science and Technology of China
Original Assignee
Chengdu Sigma Photoelectric Technology Co ltd
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chengdu Sigma Photoelectric Technology Co ltd, University of Electronic Science and Technology of China filed Critical Chengdu Sigma Photoelectric Technology Co ltd
Priority to CN201610301123.8A priority Critical patent/CN105932019A/en
Publication of CN105932019A publication Critical patent/CN105932019A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses a large power LED structure adopting COB packaging and belongs to the technical field of optoelectronic devices. The large power LED structure includes a radiator, and a LED chip structure and a packaging layer which are arranged on the radiator. The radiator is characterized by electrical isolation. The large power LED structure, compared with current LED structures, removes an insulation layer, a metal substrate, and a heat conduction silica gel layer, shortens a heat transfer path, improves heat radiation performances, and reduces chip junction temperature. According to the invention, the packaging layer of the large power LED structure has an undulated surface of protrusions or/and indentations, which effectively increases the efficiency of light extraction. According to the invention, the radiator of the large power LED structure has a surface which is provided with grooves, which further shortens the heat radiation path and increases heat radiation performances. According to the invention, the large power LED structure has low manufacturing cost and simple structure, and is conducive to large scale mass production.

Description

A kind of high power LED structure using COB to encapsulate
Technical field
The invention belongs to optoelectronic device technology field, be specifically related to a kind of use that COB encapsulates high-power LED structure.
Background technology
Light emitting diode (Light Emitting Diode, LED) has that volume is little, life-span length, low in energy consumption, The advantages such as good stability, are widely used to illumination, backlight shows, in the daily life such as automobile lamp.At present Most widely used is great power LED, but along with the increase of chip power, the heat dissipation problem of great power LED Increasingly severe.The heat being collected in LED chip not only affects its Electronic Performance, also can affect its brightness And color.Along with the rising of temperature, spectrum can occur red shift, and luminous efficiency declines；And the too high meeting of temperature makes glimmering The efficiency of light powder and service life reduction, the luminescent properties causing LED chip is poor, life-span low even device permanent Damage.
COB encapsulation refers to fix on large scale package support plurality of LEDs chip, by the mutual connection in series-parallel of routing, Coating mixed fluorescent powder silica gel, and solidify the packing forms of silica gel, structure is as shown in Figure 1.In COB encapsulation It is that plurality of LEDs chip is fixed on metal basal board, by plurality of LEDs chip rational deployment on substrate The gathering of metal basal board amount of localized heat can be prevented effectively from, alleviate the problem that heat radiation is bad to a certain extent, with Time plurality of LEDs chip light can be made again more uniform.COB encapsulation in sinking path be chip to crystal-bonding adhesive, Arrive insulating barrier again, be then delivered to radiating element by heat conductive silica gel；But the thermal conductivity of insulating barrier is the lowest, meeting Affect heat-transfer effect, although and in COB encapsulation the silica gel of surface-coated can improve efficiency of light extraction, but have Light can be limited in chip internal because of total reflection, or through multiple total reflection from chip sides outgoing, very To being consumed by absorption, reduce the light extraction efficiency of chip.
Summary of the invention
The present invention is directed to the defect that background technology exists, it is proposed that a kind of great power LED using COB to encapsulate Structure, efficiently solves the problem that in tradition COB encapsulating structure, the lower thermal conductivity of insulating barrier causes poor heat transfer. High power LED structure of the present invention heat radiation is good, and junction temperature of chip is low, and light emission rate is high.
Technical scheme is as follows:
A kind of high power LED structure using COB to encapsulate, it is characterised in that include radiator 2, and Being positioned at the LED chip structure 3 on radiator and encapsulated layer 1, described radiator 2 is electric insulation radiator.
Further, described encapsulated layer 1 surface is the projection just risen and fallen or/and cave in, described projection or recessed Fall into as rule or/and irregular figure.
Further, described encapsulated layer 1 surface is the triangular hill structure of rule.
Further, described encapsulated layer 1 is high-molecular organic material and the mixture of fluorescent material of low-refraction, The high-molecular organic material of described low-refraction is epoxy resin or silica gel etc..
Further, described radiator 2 is electric insulation radiator, including ceramic heat sink, aluminium nitride radiator Deng.
Further, groove is offered on described radiator 2 surface, and described LED chip structure 3 is arranged at groove In, can effectively shorten heat dissipation path.
Further, groove is offered by methods such as machine cuts in described radiator 2 surface, the groove offered The degree of depth is 0.05～0.2mm.
Further, described LED chip structure 3 includes multiple series connection or series-parallel LED chip, many Realize connection in series-parallel by gold thread or aluminum steel between individual LED chip to connect.
The manufacture method of a kind of high power LED structure using COB to encapsulate, comprises the following steps:
Step 1: fix multiple LED chip by crystal-bonding adhesive in electric insulation spreader surface, forms LED core Chip architecture 3；
Step 2: prepare silica-based roughening template；
Step 3: the electric insulation spreader surface coating of the band LED chip structure 3 obtained in step 1 is organic Macromolecular material and the mixture of fluorescent material, as encapsulated layer, silica-based roughening template step 2 obtained falls to press On encapsulated layer, solidification, take off roughening template, i.e. can get the great power LED of COB of the present invention encapsulation Structure.
The invention have the benefit that high power LED structure that the present invention provides compared with existing LED structure, Eliminate insulating barrier, metal basal board, thermal conductive silicon glue-line, shorten heat-transfer path, improve heat dispersion, fall Low junction temperature of chip；The encapsulated layer surface of high power LED structure of the present invention is that the projection that rises and falls of height is or/and recessed Fall into, be effectively increased the light extraction efficiency of chip；Radiator 2 surface in high power LED structure of the present invention is opened If groove, further shorten heat dissipation path, improve heat dispersion；High power LED structure system of the present invention Make low cost, simple in construction, be advantageously implemented large-scale batch production.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the high power LED structure of the employing COB encapsulation in background technology；Wherein, 1 For encapsulated layer, 2 is radiator, and 3 is LED chip structure, and 4 is gold thread, and 6 is Copper Foil, and 7 is crystal-bonding adhesive, 8 is box dam glue, and 9 is insulating barrier, and 10 is metal basal board, and 11 is heat conductive silica gel；
Fig. 2 is the hot analogous diagram of the high power LED structure of the employing COB encapsulation in background technology；
Fig. 3 is the light analogous diagram of the high power LED structure of the employing COB encapsulation in background technology；
Fig. 4 is the structural representation of the high power LED structure that the present invention uses COB to encapsulate；Wherein, 1 is Encapsulated layer, 2 is radiator, and 3 is LED chip structure, and 4 is gold thread, and 5 is that the triangle of rule of surface is convex Playing structure, 6 is Copper Foil, and 7 is crystal-bonding adhesive, and 8 is box dam glue；
Fig. 5 is a kind of tandem junction of LED chip in the high power LED structure that the present invention uses COB to encapsulate Structure；
Fig. 6 is a kind of connection in series-parallel of LED chip in the high power LED structure that the present invention uses COB to encapsulate Structure；
Fig. 7 is the technique preparation flow figure that the embodiment of the present invention uses the high power LED structure of COB encapsulation；
Fig. 8 is the hot analogous diagram that the embodiment of the present invention uses the high power LED structure of COB encapsulation；
Fig. 9 is the light analogous diagram that the embodiment of the present invention uses the high power LED structure of COB encapsulation；
Figure 10 be the embodiment of the present invention use COB encapsulation high power LED structure in LED chip string also Connection mode and dimensional parameters.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment, technical scheme is described in detail in detail.
As it is shown in figure 1, the high power LED structure of the existing employing COB encapsulation for mentioning in background technology Schematic diagram, including radiator 2 and be sequentially located at the heat conductive silica gel 11 on radiator 2, metal basal board 10, insulating barrier 9, LED chip structure 3 and encapsulated layer 1, described radiator 2 is metal heat sink, described LED chip structure 3 is fixed on insulating barrier 9 by crystal-bonding adhesive 7, described radiator two ends connection copper foil 6 Drawing as electrode, radiator 2 and LED chip structure 3 surface cover encapsulated layer 1, for packaging, The upper surface of described encapsulated layer 1 is flat configuration, and described box dam glue 8 surrounds encapsulated layer, prevents encapsulated layer material Spilling.
Further, described LED chip structure 3 includes multiple series connection or series-parallel LED chip, logical Cross full-automatic COB bonder and realize the binding of multiple chip, then use gold thread 4 to realize multiple LED chip Connection in series-parallel.
Fig. 2 is the hot analogous diagram of the high power LED structure of the employing COB encapsulation in background technology；Emulation bar Part is: room temperature 25 DEG C, and chip total thermal power is 0.8W.As shown in Figure 2, the great power LED of background technology The junction temperature of chip of structure is 98.7 DEG C.Fig. 3 is the great power LED knot of the employing COB encapsulation in background technology The light analogous diagram of structure；Simulated conditions is: each chip emission luminous flux is 0.05lm, each chip light line number It is 10000.From the figure 3, it may be seen that background technology uses the light emission rate of the high power LED structure of COB encapsulation It is 0.31404.
As shown in Figure 4, the structural representation of high power LED structure that COB encapsulates is used for the present invention；Bag Include radiator 2, and be positioned at the LED chip structure 3 on radiator and encapsulated layer 1, described radiator 2 For electric insulation radiator, described LED chip structure 3 is fixed on radiator 2 by crystal-bonding adhesive 7, institute Stating radiator 2 two ends connection copper foil 6 to draw as electrode, radiator 2 and LED chip structure 3 surface are covered Lid encapsulated layer 1, for packaging, described box dam glue 8 surrounds encapsulated layer, prevents the spilling of encapsulated layer material. LED chip structure 3 is directly arranged on radiator 2 by the present invention, eliminate insulating barrier, metal basal board, Heat conductive silica gel, shortens heat-transfer path, has more preferable heat dispersion.
Further, described encapsulated layer 1 surface is the triangular hill structure 5 of rule, is effectively increased chip Light extraction efficiency.
Further, the degree of depth is offered by methods such as machine cuts in described radiator 2 surface is 0.05～0.2mm Groove, described LED chip structure 3 is arranged in groove, can effectively shorten heat dissipation path.
Further, described encapsulated layer 1 is high-molecular organic material and the mixture of fluorescent material of low-refraction, Vacuum defoamation machine is used to remove the submicron formed in high-molecular organic material and fluorescent material mixed process before using Residual bubble.
Further, described LED chip structure 3 include multiple series connection or series-parallel LED chip (as Fig. 5, shown in 6), realized the binding of multiple chip by full-automatic COB bonder；Multiple LED chip are led to Cross crystal-bonding adhesive and be fixed on radiator, then use gold thread or aluminum steel to realize the connection in series-parallel of multiple LED chip.
Further, described crystal-bonding adhesive 7 is conductive silver paste or conduction stannum slurry, uses point gum machine coating；Described gold Line 4 obtains by automatic gold wire ball bonding wire is machine-processed；Described box dam glue 8 is organic silica gel, and effect is to prevent encapsulated layer The spilling of material.
Embodiment
A kind of high power LED structure using COB to encapsulate, including radiator 2, and be positioned at radiator it On LED chip structure 3 and encapsulated layer 1；Described encapsulated layer 1 is the mixture of epoxy resin and fluorescent material； Described radiator 2 is ceramic heat sink, and the size of radiator is 10mm*10mm*1.5mm, heatsink fins The spacing of sheet can affect the convection current with air, and the thickness of fin can affect the area with air contact, and then impact The performance of radiator and junction temperature of chip, the present embodiment optimizes through many-side and is set to by heat radiator fin thickness 0.5mm, is highly set to 8mm, and spacing is set to 1mm；The spacing of LED chip can affect radiator table The thermograde in face and the distribution of each junction temperature of chip, also can affect maximum and the meansigma methods of illuminance, the present embodiment After many suboptimization, chip horizontal spacing being set to 2mm, longitudinal pitch is set to 2mm, such as Figure 10 Shown in；Described radiator 2 surface configuration groove, depth of groove is 0.15mm, and width is 0.4mm.
Fig. 7 is the technique preparation flow figure that the embodiment of the present invention uses the high power LED structure of COB encapsulation； First, on ceramic heat sink surface by the method for machine cuts offer the degree of depth be 0.15mm, width be 0.4mm Groove, Copper Foil 6 is fixed on ceramic heat sink both sides, uses automatic, high precision point gum machine by crystal-bonding adhesive 7 It is coated in groove, then uses full-automatic COB bonder LED chip to be bundled on crystal-bonding adhesive 7, pass through Automatically LED chip gold thread 4 is connected into the series parallel structure shown in Figure 10 by gold wire ball bonding equipment, is formed LED chip structure 3；Then use COB vision box dam point gum machine that box dam glue 8 is accurately coated on Copper Foil 6 On, 150 DEG C of solidification 30min, use automatic, high precision point gum machine that encapsulated layer material is coated on box dam glue 8 subsequently Enclosed region, makes its surface be planar structure owing to encapsulated layer material self has good mobility, uses tool The silica-based roughening template of well-regulated triangular shaped recess is pressed on encapsulated layer, solidifies 1h at 100～150 DEG C, Take off roughening template, i.e. can get the high power LED structure of embodiment COB encapsulation.
Fig. 8 is the hot analogous diagram that embodiment uses the high power LED structure of COB encapsulation；Simulated conditions is: Room temperature 25 DEG C, chip total thermal power is 0.8W.As shown in Figure 8, embodiment uses the big merit of COB encapsulation The junction temperature of chip of rate LED structure is 95.8 DEG C, compares background technology structure and reduces 2.9 DEG C.
Fig. 9 is the light analogous diagram that embodiment uses the high power LED structure of COB encapsulation；Simulated conditions is: Each chip emission luminous flux is 0.05lm, and each chip light line number is 10000.As shown in Figure 9, no matter From illumination maximum, minima, meansigma methods, or on luminous flux, light total number, LED junction of the present invention Structure, compared with background technology, all demonstrates that more preferable result, the light emission rate of LED structure of the present invention are 0.53565, It is significantly increased relative to the 0.31404 of background technology structure.

Claims (10)

1. the high power LED structure using COB to encapsulate, it is characterised in that include radiator (2), And it being positioned at the LED chip structure (3) on radiator and encapsulated layer (1), described radiator (2) is Electric insulation radiator.
The high power LED structure of COB the most according to claim 1 encapsulation, it is characterised in that institute Stating encapsulated layer surface is the projection just risen and fallen or/and cave in.
The high power LED structure of COB the most according to claim 2 encapsulation, it is characterised in that institute State raised or sunken for rule or/and irregular figure.
The high power LED structure of COB the most according to claim 1 encapsulation, it is characterised in that institute State the triangular hill structure that encapsulated layer surface is rule.
The high power LED structure of COB the most according to claim 1 encapsulation, it is characterised in that institute State high-molecular organic material and the mixture of fluorescent material that encapsulated layer is low-refraction, described low-refraction organic Macromolecular material is epoxy resin or silica gel.
The high power LED structure of COB the most according to claim 1 encapsulation, it is characterised in that institute Stating electric insulation radiator is ceramic heat sink or aluminium nitride radiator.
The high power LED structure of COB the most according to claim 1 encapsulation, it is characterised in that institute Stating radiator (2) surface and offer groove, described LED chip structure (3) is arranged in groove.
The high power LED structure of COB the most according to claim 7 encapsulation, it is characterised in that institute Stating groove uses machine cuts method to offer, and the degree of depth of groove is 0.05～0.2mm.
The high power LED structure of COB the most according to claim 1 encapsulation, it is characterised in that institute State LED chip structure and include multiple series connection or series-parallel LED chip, logical between multiple LED chip Cross gold thread or aluminum steel realizes connection in series-parallel and connects.
10. use a manufacture method for the high power LED structure that COB encapsulates, comprise the following steps:
Step 1: fix multiple LED chip by crystal-bonding adhesive in electric insulation spreader surface, forms LED core Chip architecture (3)；
Step 2: prepare silica-based roughening template；
Step 3: the electric insulation spreader surface of the band LED chip structure (3) obtained in step 1 is coated with Machine macromolecular material and the mixture of fluorescent material, as encapsulated layer, silica-based roughening template step 2 obtained is fallen It is pressed on encapsulated layer, solidification, takes off roughening template, i.e. can get the high-power of COB of the present invention encapsulation LED structure.
CN201610301123.8A 2016-05-09 2016-05-09 Large power LED structure adopting COB packaging Pending CN105932019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610301123.8A CN105932019A (en) 2016-05-09 2016-05-09 Large power LED structure adopting COB packaging

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610301123.8A CN105932019A (en) 2016-05-09 2016-05-09 Large power LED structure adopting COB packaging

Publications (1)

Publication Number Publication Date
CN105932019A true CN105932019A (en) 2016-09-07

Family

ID=56835533

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610301123.8A Pending CN105932019A (en) 2016-05-09 2016-05-09 Large power LED structure adopting COB packaging

Country Status (1)

Country Link
CN (1) CN105932019A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107396533A (en) * 2017-09-05 2017-11-24 安徽晶格尔电子有限公司 A kind of circuit board and its processing method that can measure own temperature
CN108269902A (en) * 2018-01-16 2018-07-10 深圳市光脉电子有限公司 A kind of LED encapsulation structure and its packaging method
CN111725376A (en) * 2020-06-20 2020-09-29 广州市鸿利显示电子有限公司 Preparation method of light source assembly
CN113224219A (en) * 2021-05-10 2021-08-06 珠海市宏科光电子有限公司 Manufacturing method of intelligent full-color-mixing COB light source
CN113241398A (en) * 2021-05-21 2021-08-10 珠海市宏科光电子有限公司 COB light source packaging heat balance treatment process
CN110959199B (en) * 2017-08-28 2023-12-15 奥斯兰姆奥普托半导体有限责任公司 Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090302345A1 (en) * 2008-06-06 2009-12-10 Bill Chuang Led lamp module and fabrication method thereof
CN202927508U (en) * 2012-05-21 2013-05-08 王定锋 Light-emitting diode (LED) lamp module with circuit directly manufactured on three-dimensional heat dissipating support lamp carrier
CN103219445A (en) * 2013-04-28 2013-07-24 中国科学院苏州纳米技术与纳米仿生研究所 Method for manufacturing cap layer thickened photoelectric device
CN204118067U (en) * 2014-07-25 2015-01-21 王伟奉 Directly be packaged in the LED chip encapsulation architecture of radiator

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090302345A1 (en) * 2008-06-06 2009-12-10 Bill Chuang Led lamp module and fabrication method thereof
CN202927508U (en) * 2012-05-21 2013-05-08 王定锋 Light-emitting diode (LED) lamp module with circuit directly manufactured on three-dimensional heat dissipating support lamp carrier
CN103219445A (en) * 2013-04-28 2013-07-24 中国科学院苏州纳米技术与纳米仿生研究所 Method for manufacturing cap layer thickened photoelectric device
CN204118067U (en) * 2014-07-25 2015-01-21 王伟奉 Directly be packaged in the LED chip encapsulation architecture of radiator

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110959199B (en) * 2017-08-28 2023-12-15 奥斯兰姆奥普托半导体有限责任公司 Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component
CN107396533A (en) * 2017-09-05 2017-11-24 安徽晶格尔电子有限公司 A kind of circuit board and its processing method that can measure own temperature
CN108269902A (en) * 2018-01-16 2018-07-10 深圳市光脉电子有限公司 A kind of LED encapsulation structure and its packaging method
CN111725376A (en) * 2020-06-20 2020-09-29 广州市鸿利显示电子有限公司 Preparation method of light source assembly
CN113224219A (en) * 2021-05-10 2021-08-06 珠海市宏科光电子有限公司 Manufacturing method of intelligent full-color-mixing COB light source
CN113241398A (en) * 2021-05-21 2021-08-10 珠海市宏科光电子有限公司 COB light source packaging heat balance treatment process
CN113241398B (en) * 2021-05-21 2021-11-02 珠海市宏科光电子有限公司 COB light source packaging heat balance treatment process

Similar Documents

Publication Publication Date Title
CN105932019A (en) Large power LED structure adopting COB packaging
CN201412704Y (en) Light source of integrated LED chip
CN101621105B (en) LED flip chip integration encapsulation method and LED encapsulated by same
CN203481273U (en) LED light source module based on AlSiC composite substrate
CN201868429U (en) Embedded-type encapsulating structure of luminous diode
CN202013881U (en) Integrated packaging structure with vertically structured LED chips
CN212851202U (en) Novel LED drive circuit board
CN103367346A (en) Novel high-power LED light source and implementation method thereof
US9029898B2 (en) Light emitting diode and illumination device using same
CN102214746B (en) Method for manufacturing gallium nitride-based power LED (Light-Emitting Diode) chip
CN201281306Y (en) Packaging structure for high power light-emitting diode chip
CN201443693U (en) LED light source module
CN204167364U (en) High heat conduction aluminium nitride full porcelain LED shell
CN203631589U (en) Inverted LED packaging structure and LED lamp strip
CN202957289U (en) Light source module
CN202473912U (en) LED array light source without circuit substrate
CN205245106U (en) Integrative encapsulation thermal module of direct type
CN109920904B (en) Heat radiation structure of high-power GaN-based LED and processing technology
CN203631590U (en) Vertical LED light bar
CN102544300A (en) LED packaging structure
CN202120907U (en) Leadless LED (Light-emitting Diode) module
CN202189827U (en) LED (Light-Emitting Diode) packaging module
CN219959039U (en) Device for improving heat dissipation of high-power LED chip based on COB packaging
CN203940252U (en) A kind of chip directly pastes the LED light source module of heat pipe
CN102945844A (en) Light source module

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20160907

RJ01 Rejection of invention patent application after publication