CN103035616A - Vertical transition structure among three-dimensional multi-chip component boards - Google Patents
Vertical transition structure among three-dimensional multi-chip component boards Download PDFInfo
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- CN103035616A CN103035616A CN2012105639811A CN201210563981A CN103035616A CN 103035616 A CN103035616 A CN 103035616A CN 2012105639811 A CN2012105639811 A CN 2012105639811A CN 201210563981 A CN201210563981 A CN 201210563981A CN 103035616 A CN103035616 A CN 103035616A
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- microstrip line
- conduction band
- planar waveguide
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Abstract
The invention discloses a transition structure among three-dimensional multi-chip component boards. The transition structure among the three-dimensional multi-chip component boards comprises a three-dimensional component module made of epoxy resin, an upper-layer circuit board sealed in the three-dimensional component module and a lower-layer circuit board sealed in the three-dimensional component module, a metal layer laid on the surface of the three-dimensional component module and a coplanar waveguide sculptured on the metal layer. The upper-layer circuit board is arranged under the lower-layer circuit board in a paralleled mode, and the coplanar waveguide is vertically arranged on the lateral side of the three-dimensional component module and is perpendicular to the upper-layer circuit board and the lower-layer circuit board. The transition structure among the three-dimensional multi-chip component boards is capable of conducting a three-dimensional vertical interconnection on a lateral side of a 3D-Multi Chip Module (MCM), and achieving vertical interconnections among multi-layer circuit boards. Areas of planar circuits are not occupied by the interconnections. Signal transmission has a wide frequency band, little insertion loss, little return loss and a simple structure. Circuit functions of expanding filtering and distributing power and the like are easy to expand on the interconnections arranged on the lateral side. Further, requirements to registration precision of a vertical circuit and a horizontal circuit are not high, accordingly technical implementability is high.
Description
Technical field
The present invention relates to a kind of vertical transition structure, vertical transition structure between especially a kind of 3-D multi-chip component palette.
Background technology
3-D multi-chip assembly (3D-MCM) is the Mcm Technique that grows up in two-dimentional multi-chip module (2D-MCM) technical foundation.Lamination 3D-MCM is at present most widely used a kind of among the 3D-MCM.Its interconnection technique has at present: wire bond (or TAB) perpendicular interconnection technology, thin film metallized perpendicular interconnection technology, salient point (perhaps soldered ball) perpendicular interconnection technology, division board via metal perpendicular interconnection technology etc., but these technology all are the interconnection techniques of doing at the circuit board of lamination, need to take the area of laminated circuit board, restrict density and the packaging efficiency of circuit multi-chip module.
Along with the development based on technology such as the wrapper technology of epoxy resin, laser formation circuit, so that at lamination circuit side design circuit, but side circuit and horizontal circuit alignment precision are very high to technological requirement, and very large on property of interconnections impact between plate.
Summary of the invention
Technical problem: the present invention proposes a kind of broadband rf signal or high-speed digital signal can realized at the perpendicular interconnection of 3D-MCM interlayer sidewall, and reduce vertical transition structure between the 3-D multi-chip component palette of technique alignment precision requirement.
Technical scheme: vertical transition structure between 3-D multi-chip component palette of the present invention, the co-planar waveguide that comprises three-dimensional micromodule module that epoxy resin makes, is encapsulated in the metal level of upper layer circuit board and the lower circuit plate in the three-dimensional micromodule module, the three-dimensional micromodule Modular surface that is laid in, etches at metal level, upper layer circuit board is set in parallel in the top of lower circuit plate, and co-planar waveguide vertically is arranged on the side of three-dimensional micromodule module and perpendicular to upper layer circuit board and lower circuit plate;
Upper layer circuit board downside is provided with microstrip line ground, upper strata, upside is provided with upper strata microstrip line conduction band, microstrip line ground, upper strata one end is provided with breach, lower circuit plate downside is provided with lower floor microstrip line ground, upside is provided with lower floor's microstrip line conduction band, co-planar waveguide comprises the co-planar waveguide center conduction band that is positioned at three-dimensional micromodule module side and is positioned at the co-planar waveguide ground of conduction band both sides, co-planar waveguide center, co-planar waveguide ground is separated by two line of rabbet joint between the conduction band of ground roll guiding center together, the lower end of co-planar waveguide center conduction band and lower floor's microstrip line conduction band short circuit, the upper end is connected with upper strata microstrip line conduction band, and relative with an end on microstrip line ground, upper strata across breach.
In preferred version of the present invention, co-planar waveguide ground is connected with lower floor microstrip line ground with microstrip line ground, upper strata respectively.
In preferred version of the present invention, the Width upper strata microstrip line conduction band of co-planar waveguide center conduction band and the width of lower floor's microstrip line conduction band all want large.
In preferred version of the present invention, co-planar waveguide center conduction band and co-planar waveguide all are etched with passive circuit on the ground.
Vertical transition structure between 3-D multi-chip component palette of the present invention, specific as follows: the levels circuit board for lamination is placed, microstrip circuit is all arranged on it, it is caused the edge of circuit board, to guarantee that this little band can be connected with the side surface circuit is fine; Side surface at assembly module adopts co-planar waveguide (CPW) structure to link to each other with microstrip line, the center conduction band of this CPW becomes vertical linking to each other with the microstrip line conduction band of levels circuit, and the center conduction band of the conduction band Width CPW of microstrip line is little, thereby alleviated the strict demand of planar circuit with vertical circuit alignment precision, guaranteed the realizability of technique; The ground of CPW links to each other with the ground of the microstrip line of levels circuit.Because all being microstrip line conduction band forward up, place each layer microstrip circuit, thereby the ground of upper strata microstrip line will contact with the center conduction band of CPW and cause short circuit, so the microstrip line ground of upper strata circuit needs to carve except a rectangular indentation at this place, and the center conduction band of CPW and the microstrip line ground of upper strata circuit are successfully isolated.
Beneficial effect: the present invention compared with prior art has the following advantages:
Can carry out in the 3D-MCM side three-dimensional perpendicular interconnection, realize perpendicular interconnection between multilayer circuit board, interconnection structure does not take the planar circuit area, signal transmission bandwidth is wide, Insertion Loss is little, return loss is also little, simple in structure, be easy to the expanded circuit function at the side interconnection structure, as expanding the functions such as filtering, power division, and the alignment precision to vertical circuit and horizontal circuit is less demanding, thereby realizability is high on technique.
Description of drawings
Fig. 1 is structural representation of the present invention.
Have among the figure: three-dimensional micromodule module 1, upper layer circuit board 2, lower circuit plate 3, microstrip line ground, upper strata 21, upper strata microstrip line conduction band 22, breach 23, lower floor microstrip line ground 31, lower floor's microstrip line conduction band 32, metal level 4, co-planar waveguide 5, co-planar waveguide center conduction band 51, co-planar waveguide ground 52.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
Vertical transition structure between 3-D multi-chip component palette of the present invention, specific as follows: stacked package layer circuit board 2 and lower circuit plate 3 in three-dimensional micromodule module 1, upper strata microstrip line conduction band 22 is arranged on the upper layer circuit board 2, lower floor's microstrip line conduction band 32 is arranged on the lower circuit plate 3, upper strata microstrip line conduction band 22 and lower floor's microstrip line conduction band 32 all to circuit board 2,3 edge, are connected and can be connected with the side surface circuit is fine with lower floor microstrip line conduction band to guarantee this upper strata microstrip line conduction band 22; Side surface in three-dimensional micromodule module 1 adopts co-planar waveguide 5 structures to link to each other with lower circuit 3 with upper strata circuit 2, the center conduction band 51 of this co-planar waveguide 5 and the upper strata microstrip line conduction band 22 of upper strata circuit 2,32 one-tenth vertical linking to each other of lower floor's microstrip line conduction band of lower circuit 3, the ground 31 of the ground 21 of the co-planar waveguide ground 52 of co-planar waveguide 5 and the upper strata microstrip line of upper strata circuit 2, lower floor's microstrip line of lower circuit 3 is vertical linking to each other also.Because all being up forwards, the upper strata microstrip line conduction band 22 of upper strata circuit 2 and lower circuit 3 lower floor's microstrip line conduction bands 32 place, thereby the microstrip line ground, upper strata 21 of upper strata circuit 2 together ground roll guiding center conduction band 51 short circuits causes short circuit, so carve except a rectangular indentation 23 on this microstrip line ground, upper strata, place 21, co-planar waveguide center conduction band 51 and microstrip line ground, upper strata 21 successfully isolated.
On making, owing to adopt the little design of co-planar waveguide center, the Width side conduction band 51 of upper strata microstrip line conduction band 22 and lower floor's microstrip line conduction band 32, well eliminated on the one hand because the discontinuity that perpendicular interconnection brings has reduced the requirement to the technique technique of alignment simultaneously greatly.
Among the embodiment, co-planar waveguide ground 52 is connected with lower floor microstrip line ground 31 with microstrip line ground, upper strata 21 respectively.Among the embodiment, the Width upper strata microstrip line conduction band 22 of co-planar waveguide center conduction band 51 and the width of lower floor's microstrip line conduction band 32 all want large.
Among another embodiment, all be etched with passive circuit on co-planar waveguide center conduction band 51 and the co-planar waveguide ground 52.
On technique, can adopt based on the epoxy resin enclosed technology such as 3 D stereo Module Manufacture Technology and realize.At first will be equipped with the upper layer circuit board 2 of different active, passive circuits and device and lower circuit plate 3 and carry out stackingly, and layer circuit board 2 and lower circuit plate 3 parts are drawn respectively in upper strata microstrip line conduction band 22, microstrip line ground, upper strata 21, lower floor's microstrip line conduction band 32 and the lower floor microstrip line ground 31 that will need to connect; Upper layer circuit board 2 and the lower circuit plate 3 well that will superpose again put into mould, and the injection ring epoxy resins is injection molded as original three-dimensional micromodule module; This original epoxy resin block is carried out sharp processing, upper strata microstrip line conduction band 22, microstrip line ground, upper strata 21, lower floor's microstrip line conduction band 32 and the lower floor microstrip line ground 31 of drawing are exposed; Final profile is carried out surface metalation; Adopt the laser direct forming circuit engineering, the three-dimensional micromodule module 1 surface etch circuit after metallization, as etch the transmission lines such as co-planar waveguide 5, the line of rabbet joint, each layer direct current is connected with radiofrequency signal.
Claims (4)
1. vertical transition structure between a 3-D multi-chip component palette, it is characterized in that, this structure comprises the three-dimensional micromodule module (1) that epoxy resin is made, be encapsulated in upper layer circuit board (2) and lower circuit plate (3) in the described three-dimensional micromodule module (1), the metal level (4) on the described three-dimensional micromodule module (1) that is laid in surface, the co-planar waveguide (5) that etches at described metal level (4), described upper layer circuit board (2) is set in parallel in the top of lower circuit plate (3), and described co-planar waveguide (5) vertically is arranged on the side of three-dimensional micromodule module (1) and perpendicular to upper layer circuit board (2) and lower circuit plate (3);
Described upper layer circuit board (2) downside is provided with microstrip line ground, upper strata (21), upside is provided with upper strata microstrip line conduction band (22), microstrip line ground, described upper strata (21) one ends are provided with breach (23), described lower circuit plate (3) downside is provided with lower floor microstrip line ground (31), upside is provided with lower floor's microstrip line conduction band (32), described co-planar waveguide (5) comprises the co-planar waveguide center conduction band (51) that is positioned at three-dimensional micromodule module (1) side and is positioned at the co-planar waveguide ground (52) of described co-planar waveguide center conduction band (51) both sides, described co-planar waveguide ground (52) is separated by two line of rabbet joint between the ground roll guiding center conduction band (51) together, the lower end of co-planar waveguide center conduction band (51) and lower floor's microstrip line conduction band (32) short circuit, the upper end is connected with upper strata microstrip line conduction band (22), and relative with an end on microstrip line ground, upper strata (21) across breach (23).
2. vertical transition structure between 3-D multi-chip component palette according to claim 1 is characterized in that, described co-planar waveguide ground (52) is connected with lower floor microstrip line ground (31) with microstrip line ground, upper strata (21) respectively.
3. vertical transition structure between 3-D multi-chip component palette according to claim 1 and 2 is characterized in that, the Width upper strata microstrip line conduction band (22) of described co-planar waveguide center conduction band (51) and the width of lower floor's microstrip line conduction band (32) all want large.
4. vertical transition structure between 3-D multi-chip component palette according to claim 1 is characterized in that, all is etched with passive circuit on described co-planar waveguide center conduction band (51) and co-planar waveguide ground (52).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105639811A CN103035616A (en) | 2012-12-21 | 2012-12-21 | Vertical transition structure among three-dimensional multi-chip component boards |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012105639811A CN103035616A (en) | 2012-12-21 | 2012-12-21 | Vertical transition structure among three-dimensional multi-chip component boards |
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| CN103035616A true CN103035616A (en) | 2013-04-10 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103612A (en) * | 2014-07-07 | 2014-10-15 | 中国电子科技集团公司第二十研究所 | Perpendicular interconnection transition structure applied to three-dimensional module |
| CN105098296A (en) * | 2015-09-11 | 2015-11-25 | 中国科学技术大学 | Coplanar waveguide-based electromagnetic radiation structure |
| CN105680136A (en) * | 2016-03-21 | 2016-06-15 | 南京邮电大学 | Transition circuit from coplanar waveguide to groove line and to substrate integrated non-radiation dielectric waveguides |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6433413B1 (en) * | 2001-08-17 | 2002-08-13 | Micron Technology, Inc. | Three-dimensional multichip module |
| CN102800636A (en) * | 2012-08-28 | 2012-11-28 | 中国科学院微电子研究所 | Electronic component package and manufacturing method thereof |
| CN203013713U (en) * | 2012-12-21 | 2013-06-19 | 东南大学 | Three-dimensional multi-chip module boards broadband transition structure |
-
2012
- 2012-12-21 CN CN2012105639811A patent/CN103035616A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6433413B1 (en) * | 2001-08-17 | 2002-08-13 | Micron Technology, Inc. | Three-dimensional multichip module |
| CN102800636A (en) * | 2012-08-28 | 2012-11-28 | 中国科学院微电子研究所 | Electronic component package and manufacturing method thereof |
| CN203013713U (en) * | 2012-12-21 | 2013-06-19 | 东南大学 | Three-dimensional multi-chip module boards broadband transition structure |
Non-Patent Citations (1)
| Title |
|---|
| 张兆华 吴金财 王峰: "树脂封装在微波多芯片组件中的应用研究", 《微波学报》, no. 2, 15 August 2012 (2012-08-15), pages 470 - 473 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103612A (en) * | 2014-07-07 | 2014-10-15 | 中国电子科技集团公司第二十研究所 | Perpendicular interconnection transition structure applied to three-dimensional module |
| CN104103612B (en) * | 2014-07-07 | 2017-01-18 | 中国电子科技集团公司第二十研究所 | Perpendicular interconnection transition structure applied to three-dimensional module |
| CN105098296A (en) * | 2015-09-11 | 2015-11-25 | 中国科学技术大学 | Coplanar waveguide-based electromagnetic radiation structure |
| CN105098296B (en) * | 2015-09-11 | 2018-12-14 | 中国科学技术大学 | A kind of electromagnetic radiation structure based on co-planar waveguide |
| CN105680136A (en) * | 2016-03-21 | 2016-06-15 | 南京邮电大学 | Transition circuit from coplanar waveguide to groove line and to substrate integrated non-radiation dielectric waveguides |
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Application publication date: 20130410 |