CN105789163A - Radio frequency front-end chip integration module and radio frequency front-end chip integration method - Google Patents
Radio frequency front-end chip integration module and radio frequency front-end chip integration method Download PDFInfo
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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Abstract
The invention provides a radio frequency front-end chip integration module and a radio frequency front-end chip integration method. The radio frequency front-end chip integration module comprises a first tube core and a second tube core, wherein the first tube core is used for amplifying a radio frequency power; the second tube core is at least one of a radio frequency switch tube core, a controller tube core and an output matching network tube core; the surface of the first tube core is provided with a first tube core joint part; the surface of the second tube core is provided with a second tube core joint part which is opposite to the first tube core joint part and is electrically connected with the first tube core joint part; through electrical connection of the first tube core joint part and the second tube core joint part, stacked connection of the first tube core and the second tube core is achieved; and integration of the first tube core and the second tube core is three-dimensional integration, namely stereo integration. Compared with the two-dimensional integration between the tube cores in the prior art, the chip packaging space is saved; and the integration degree of a radio frequency front-end chip is improved.
Description
Technical field
The present invention relates to field of semiconductor fabrication, particularly to radio frequency front end chip integration module and radio frequency front end chip integrated approach.
Background technology
Being continuously increased of the pattern supported along with mobile radio system and frequency range, the RF front end structure of Current wireless communication mobile terminal also becomes to become increasingly complex.
As shown in Figure 1, for typical GSM (global system for mobile communications, GlobalSystemforMobileCommunication) radio frequency front end chip, this chip 101 has multiple electrical pins RFin1, RFin2, ANT, RX1, RX2, VCC1, VCC2, VC1, VC2, VC3, VC4, GND etc..Described GSM radio frequency front end chip 101 includes multiple tube core 102,103,106,107, wherein 102 is the radio-frequency power amplifier tube core adopting GaAs (GaAs) technique to manufacture, and it has manufactured GSM high band and GSM low-frequency range RF power amplifier circuit；103 adopt the output matching network tube core that IPD (IntegratedPassiveDevice, integrated passive devices) technique manufactures, it is achieved the part output matching network of GSM high band and GSM low-frequency range radio-frequency power amplifier；The 106 CMOS controller tube cores for adopting CMOS technology to manufacture；The 107 SP4T radio-frequency antenna switch tube cores for adopting SOI technology to manufacture；Tube core 102,103,106,107 is mounted on a laminated multi-layer substrate (Laminate).
As shown in the figure, on substrate, utilize its multiple layer metal cabling to devise planar spiral inductor 104A, 104B and electric interconnection metal routing 104C, 104D, 104E, 104F etc., and have interlayer interconnection through hole 105A, 105B, 105C, 105D to realize the electrical interconnection of multiple layer metal cabling；Planar spiral inductor 104A, 104B on described substrate, metal routing 104C, 104D, 104E, 104F, with the inductance being manufactured on IPD tube core 103, capacity cell, and many bonding wires 108 have collectively constituted the output matching network of described GSM radio-frequency power amplifier high band and low-frequency range.Wherein, in high frequency, metal routing 104C, 104D, 104E, 104F play straight line inductance effect.
A part in many bonding wires 108 is for being connected to the pin (pad) on each tube core on the respective metal cabling of substrate or be connected on the respective pin of other tube core.Although not shown in FIG. 1, professional and technical personnel in the field are it is known that commonly use element pasted on surface (SMD, SurfaceMountedDevice) electric capacity and inductance in usual radio frequency front end chip；Accordingly, it can be seen that need the tube core of integrated multiple different process in radio frequency front end chip, and the electric interconnection between all tube cores and between tube core and base plate for packaging is realized by the mode of bonding wire or SMD, forms two dimension integrated, and integrated level is low, volume is big.Relatively above-mentioned simple GSM radio frequency front end chip, multimode multi-frequency (MMMB for 2G, 3G, 4G pattern, Multi-ModeMulti-Band) radio frequency front end chip has more complicated framework, its integrated volume will be bigger, it is impossible to meets the requirement that people are little to radio frequency front end chip volume, integrated level is high.
Accordingly, it would be desirable to a kind of new radio frequency front end chip integration mode, it is achieved tube core is heterogeneous integrated with the high density of tube core.
Summary of the invention
In view of this, it is an object of the invention to provide a kind of radio frequency front end chip integration module and radio frequency front end chip integrated approach, to solve the problem that in prior art, in radio frequency front end chip integration mode, tube core is low with die integrity.
Described radio frequency front end chip integration module includes: at least one is for amplifying the first tube core of radio-frequency power, and described first die surfaces is provided with the first tube core joint portion；At least one second tube core, described second tube core is at least one in radio-frequency (RF) switch tube core, controller tube core or output matching network tube core, and described second die surfaces is at least provided with relative with described first tube core joint portion and electric interconnection the second tube core joint portion.
Preferably, described first tube core joint portion is the salient point protruding from described first die surfaces.
Preferably, described salient point is copper projection or stannum ball.
Preferably, described second tube core joint portion is the pad being positioned in described second die surfaces.
Preferably, described first tube core is the GaAs tube core adopting GaAs technique to be made, and described first tube core joint portion is GaAs tube core joint portion.
Preferably, described second tube core is the SOI tube core adopting SOI technology to be made, and described second tube core joint portion is SOI tube core joint portion.
Preferably, described second tube core is the CMOS tube core adopting CMOS technology to be made, and described second tube core joint portion is CMOS tube core joint portion.
Preferably, described radio frequency front end chip integration module also includes base plate for packaging, and described second tube core mounts on the package substrate.
Preferably, described second tube core joint portion is pad, and described base plate for packaging is provided with base plate for packaging pad, and the pad on described second tube core is connected on described base plate for packaging pad by bonding wire.
Preferably, described second tube core joint portion is pad, and described base plate for packaging is provided with the base plate for packaging pad relative with described second tube core joint portion, and the pad on described second tube core is connected on described base plate for packaging pad by copper projection or stannum ball.
Preferably, also including multiple wafer through hole in described second tube core, described wafer through hole is for being connected described second tube core top layer circuit with the bottom circuit of described second tube core.
A kind of radio frequency front end chip integrated approach, comprises the following steps:
Thering is provided the first tube core and the second tube core, described first die surfaces is provided with the first tube core joint portion；Described second die surfaces is at least provided with the second tube core joint portion relative with described first tube core joint portion；Wherein, described first tube core is the tube core for amplifying radio-frequency power, and described second tube core is at least one in radio-frequency (RF) switch tube core, controller tube core or output matching network tube core；By described first tube core joint portion and described second tube core joint portion electrical connection.
Through as shown from the above technical solution, radio frequency front end chip integration module provided by the invention, including the first tube core and the second tube core, wherein the first tube core is used for amplifying radio-frequency power, and the second tube core is at least one in radio-frequency (RF) switch tube core, controller tube core or output matching network tube core；Described first die surfaces is provided with the first tube core joint portion, second die surfaces is provided with relative with described first tube core joint portion and electric interconnection the second tube core joint portion, it is electrically connected by the first tube core joint portion and the second tube core joint portion, realize the first tube core and the second die-stack connects, being integrated into of first tube core and the second tube core is three-dimensionally integrated, namely it is three-dimensional integrated, integrated relative to two dimension between tube core and tube core in prior art, save chip package space, improve the integrated level of radio frequency front end chip.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to the accompanying drawing provided.
Fig. 1 is existing GSM radio frequency front end chip；
The profile of a kind of radio frequency front end chip integration module that Fig. 2 provides for the embodiment of the present invention one；
The profile of a kind of radio frequency front end chip integration module that Fig. 3 a provides for the embodiment of the present invention two；
Fig. 3 b is the top view of radio frequency front end chip integration module shown in Fig. 3 a；
The profile of a kind of radio frequency front end chip integration module that Fig. 4 a provides for the embodiment of the present invention three；
Fig. 4 b is the top view of radio frequency front end chip integration module shown in Fig. 4 a；
The profile of a kind of radio frequency front end chip integration module that Fig. 5 a provides for the embodiment of the present invention four；
Fig. 5 b is the top view of radio frequency front end chip integration module shown in Fig. 5 a；
The profile of a kind of radio frequency front end chip integration module that Fig. 6 provides for the embodiment of the present invention five.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
Embodiment one
The present embodiment provides a kind of radio frequency front end chip integration module, is applied to radio-frequency front-end integrated circuit, as in figure 2 it is shown, include: at least one is for amplifying the first tube core 201 of radio-frequency power, and the first tube core 201 surface configuration has the first tube core joint portion 205；At least one second tube core 202, second tube core 202 is at least one in radio-frequency (RF) switch tube core, controller tube core or output matching network tube core, and the second tube core 202 surface is at least provided with relative with the first tube core joint portion 205 and electric interconnection the second tube core joint portion 206.
The quantity of the quantity of the first tube core 201 and the second tube core 202 is not limited by the present embodiment, increases according to the number of die in the integrated circuit of actual radio frequency front end, but including at least first tube core and at least one second tube core.
First tube core 201 is used for amplifying radio-frequency power, preferably the first tube core 201 can be high band (1710MHz-1910MHz) radio-frequency power amplifier in the present embodiment, low-frequency range (820MHz-920MHz) radio-frequency power amplifier, for 2G, 3G, in the multimode multi-frequency radio frequency front-end chip of 4G pattern, first tube core 201 can also be GSM high band (1710MHz-1910MHz) radio-frequency power amplifier, GSM low-frequency range (824MHz-915MHz) radio-frequency power amplifier, 3G/4G low-frequency range (700MHz-915MHz) radio-frequency power amplifier, any one in 3G/4G Mid Frequency (1710-2025MHz) radio-frequency power amplifier.
Second tube core 202 is at least one in radio-frequency (RF) switch tube core, controller tube core or output matching network tube core, for in the multimode multi-frequency radio frequency front-end chip of 2G, 3G, 4G pattern, described radio-frequency (RF) switch tube core includes but not limited to that input channel selects switching switch, output Frequency Band Selection switching switch, radio-frequency antenna switch, 3G/4G high band radio-frequency antenna switch etc..
In the present embodiment, the first tube core 201 surface configuration has the first tube core joint portion 205, wherein the first tube core joint portion 205 is preferably the salient point protruding from the first tube core 201 surface, it is more preferable to the first tube core joint portion, ground 205 adopts the mode such as copper projection (Cu-Pillar) or stannum ball (SolderBall) to manufacture.
Second tube core 202 surface is at least provided with relative with the first tube core joint portion 205 and electric interconnection the second tube core joint portion 206, the quantity of described second tube core joint portion 206 can be more than the quantity of the first tube core joint portion 205, can also be identical with the quantity of the first tube core joint portion 205, this is not limited by the present embodiment.Preferably, the second tube core joint portion 206 is the pad being positioned on the second tube core 202 surface, and described pad adopts any one in gold, silver, copper, titanium, nickel, aluminum, or wherein arbitrarily the alloy of two or more above-mentioned metal is made.
It should be noted that the first tube core 201 is preferably the GaAs tube core adopting GaAs technique to be made, the first corresponding tube core joint portion 205 is GaAs tube core joint portion；Second tube core 202 is preferably the SOI tube core adopting SOI technology to be made, and the second tube core joint portion 206 is SOI tube core joint portion；Or second tube core 202 be preferably the CMOS tube core adopting CMOS technology to be made, described second tube core joint portion 206 is CMOS tube core joint portion.
First tube core joint portion 205 and the second tube core joint portion 206 are oppositely arranged, and electric interconnection, the present embodiment preferably adopts ultra-sonic welded or hot pressing technique realizes the first tube core joint portion 205 and the second tube core joint portion 206 is electrically connected, it is thus possible to by the first tube core back-off to the second tube core, the solid realizing the first tube core and the second tube core is integrated, integrated relative to two dimension of the prior art, decrease the first tube core and area that the second tube core takies, improve the integrated level of radio frequency front end chip.
Embodiment two
As best shown in figures 3 a and 3b, for a specific embodiment proposed by the invention, Fig. 3 a show the sectional view of radio frequency front end chip, and Fig. 3 b show the top view of radio frequency front end chip.
In the present embodiment, the first tube core is preferably GaAs tube core, GaAs tube core 501 has manufactured and designed rf power amplifier circuit, the top layer of GaAs tube core 501 manufactures multiple salient point 505, salient point 505 is the electrical pins of rf power amplifier circuit, including radio frequency input pin, radio frequency output pin, bias voltage pin, supply voltage pin etc..Salient point 505 on GaAs tube core 501 can adopt the mode such as copper projection (Cu-Pillar) or stannum ball (SolderBall) to manufacture, and in the present embodiment, this is not limited.
Second tube core can be the SOI tube core adopting SOI technology to be made, it is also possible to for the CMOS tube core adopting CMOS technology to be made.In the present embodiment, the second tube core is preferably the SOI tube core adopting SOI technology to be made, SOI tube core 502 has manufactured and designed the functional circuits such as radio-frequency switch circuit, control circuit and input and output matching network, its top layer has manufactured multiple pad (pad) 506, the respective electric pin of functional circuit such as including the respective electric pin of radio-frequency switch circuit, the respective electric pin of control circuit and input and output matching network, and with the pin of GaAs die electrical interconnection.
GaAs tube core 501 is by salient point 505 and respective pad 506 electric interconnection on SOI tube core, described electric interconnection can adopt ultra-sonic welded or hot pressing technique to realize, GaAs tube core and the interconnection of SOI tube core back-off in the present embodiment, in the interconnection electrically namely achieving rf power amplifier circuit and radio-frequency switch circuit, control circuit and input and output matching network, it is achieved thereby that the function of complete RF front-end circuit.
As best shown in figures 3 a and 3b, GaAs tube core 501 and SOI tube core 502 stacked structure are pasted onto on a base plate for packaging 500 as entirety, implementing of base plate for packaging 500 can adopt multilamellar LGA (LandGridArray according to actual needs, Background Grid array packages) form such as substrate or metal lead wire frame, and according to actual needs, can integrated design metal contact wires, inductance element etc. on base plate for packaging 500.By many bonding wires 504, respective pad 506 on SOI tube core is linked together with the respective pad 507 on base plate for packaging 500 or solder joint 507, thus being also connected in the integrated circuit of radio-frequency front-end by the circuit structure manufactured on base plate for packaging 500, and achieve the connection of radio frequency front end chip and external electrical pins.
The radio frequency front end chip integration module that the present embodiment provides adopts the mode that the mode of salient point back-off interconnection replaces bonding wire to interconnect, it is achieved thereby that GaAs tube core is heterogeneous integrated with the solid of SOI tube core, while saving chip package space, it also avoid the bigger stray inductance that bonding wire is introduced, there is low cost, high performance advantage.
Embodiment three
As shown in Figs. 4a and 4b for another embodiment proposed by the invention, Fig. 4 a show the sectional view of radio frequency front end chip, and Fig. 4 b show the top view of radio frequency front end chip.
In the present embodiment, the first tube core is preferably GaAs tube core, GaAs tube core 601 has manufactured and designed rf power amplifier circuit, the top layer of GaAs tube core 601 manufactures multiple salient point 605, salient point 605 is the electrical pins of rf power amplifier circuit, including radio frequency input pin, radio frequency output pin, bias voltage pin, supply voltage pin etc..Salient point 605 on GaAs tube core 601 can adopt the mode such as copper projection or stannum ball to manufacture, and in the present embodiment, this is not limited.
Second tube core can be the SOI tube core adopting SOI technology to be made, it is also possible to for the CMOS tube core adopting CMOS technology to be made.In the present embodiment, the second tube core is preferably the SOI tube core adopting SOI technology to be made, SOI tube core 602 has manufactured and designed the functional circuits such as radio-frequency switch circuit, control circuit and input and output matching network, its top layer has manufactured multiple pad 606, the respective electric pin of functional circuit such as including the respective electric pin of radio-frequency switch circuit, the respective electric pin of control circuit and input and output matching network, and with the pin of GaAs die electrical interconnection.
GaAs tube core 601 is by salient point 605 and respective pad 606 electric interconnection on SOI tube core, described electric interconnection can adopt ultra-sonic welded or hot pressing technique to realize, GaAs tube core and the interconnection of SOI tube core back-off in the present embodiment, in the interconnection electrically namely achieving rf power amplifier circuit and radio-frequency switch circuit, control circuit and input and output matching network, it is achieved thereby that the function of complete RF front-end circuit.
As shown in Figs. 4a and 4b, SOI tube core 602 also manufactures multiple wafer through hole (TSV, ThroughSiliconVia) 607, in the bottom circuit being signally attached to SOI tube core 602 by SOI tube core 602 top layer circuit.In SOI tube core 602, the size of wafer through hole 607 can design according to the actual requirements, such as narrower aperture can be adopted for generally connecting signal, and for the less radiofrequency signal of dead resistance and parasitic capacitance, then can adopt wider aperture, and preferably wafer through hole 607 is the internal solid hole filling excellent conductive metal；Meanwhile, the mode of wafer through hole 607 is adopted, it is also possible to reduce the radio frequency ground connection parasitic parameter of the rf power amplifier circuit manufactured on GaAs tube core 601 and improve its heat dispersion.
Bottom at SOI tube core 602, interconnection metal layer (RDL again can also be passed through, Re-DistributionLayer) technique and passivation layer technological design manufacture inductance, capacity cell, or the lead-in wire of electric signal is arranged, multiple salient point 608 is set in relevant position, as the outer connecting leg foot of whole radio frequency front end chip.Wherein, salient point 608 is copper projection or stannum ball.
Difference according to specifically application, it is possible to whole radio frequency front end chip is mounted on another one base plate for packaging and uses, or directly against being contained in, printed circuit board (PCB) (PCB) is upper to be used, and this is easy to understanding for those skilled in the art.
The radio frequency front end chip integration module that the present embodiment provides adopts the mode that the mode of salient point back-off interconnection replaces bonding wire to interconnect, it is achieved thereby that GaAs tube core is heterogeneous integrated with the solid of SOI tube core, while saving chip package space, it also avoid the bigger stray inductance that bonding wire is introduced, there is low cost, high performance advantage.Increase in SOI tube core simultaneously and wafer through hole is set, it is also possible to reduce the radio frequency ground connection parasitic parameter of the rf power amplifier circuit manufactured on GaAs tube core and improve its heat dispersion, more optimizing radio frequency front end chip.
Embodiment four
Being another embodiment proposed by the invention as shown in figure 5a and 5b, Fig. 5 a show the sectional view of radio frequency front end chip, and Fig. 5 b show the top view of radio frequency front end chip.
In the present embodiment, the first tube core is preferably GaAs tube core, GaAs tube core 701 has manufactured and designed rf power amplifier circuit, the top layer of GaAs tube core 701 manufactures multiple salient point 705, salient point 705 is the electrical pins of rf power amplifier circuit, including radio frequency input pin, radio frequency output pin, bias voltage pin, supply voltage pin etc..Salient point 705 on GaAs tube core 701 can adopt the mode such as copper projection or stannum ball to manufacture, and in the present embodiment, this is not limited.
Second tube core can be the SOI tube core adopting SOI technology to be made, it is also possible to for the CMOS tube core adopting CMOS technology to be made.In the present embodiment, the second tube core is preferably the SOI tube core adopting SOI technology to be made, SOI tube core 702 has manufactured and designed the functional circuits such as radio-frequency switch circuit, control circuit and input and output matching network, its top layer has manufactured multiple pad 706, the respective electric pin of functional circuit such as including the respective electric pin of radio-frequency switch circuit, the respective electric pin of control circuit and input and output matching network, and with the pin of GaAs die electrical interconnection.
GaAs tube core 701 is by salient point 705 and respective pad 706 electric interconnection on SOI tube core, described electric interconnection can adopt ultra-sonic welded or hot pressing technique to realize, GaAs tube core and the interconnection of SOI tube core back-off in the present embodiment, in the interconnection electrically namely achieving rf power amplifier circuit and radio-frequency switch circuit, control circuit and input and output matching network, it is achieved thereby that the function of complete RF front-end circuit.
As shown in figure 5a and 5b, the multiple pads 706 on SOI tube core 702 top layer being connected to multiple salient point 708, outer as whole radio frequency front end chip connects pga.Wherein, salient point 708 is preferably copper projection or stannum ball.
Difference according to concrete application, described whole radio frequency front end chip can be mounted on another one base plate for packaging and use, or using directly against the printed circuit board (PCB) (PCB) being contained in client is upper, this is easy to understanding for those skilled in the art.As it can be seen, in order to facilitate the attachment of whole radio frequency front end chip to use, salient point 708 has higher height so that its with other chips or the attachment face of substrate higher than the floor plane of GaAs tube core 701.
The radio frequency front end chip integration module that the present embodiment provides adopts the mode that the mode of salient point back-off interconnection replaces bonding wire to interconnect, it is achieved thereby that GaAs tube core is heterogeneous integrated with the solid of SOI tube core, while saving chip package space, it also avoid the bigger stray inductance that bonding wire is introduced, there is low cost, high performance advantage.
Embodiment five
It is illustrated in figure 6 the side view of another kind of radio frequency front end chip proposed by the invention.In the present embodiment, the first tube core is preferably GaAs tube core, GaAs tube core 801 has manufactured and designed rf power amplifier circuit, its top layer has manufactured multiple salient point 805, salient point 805 is the electrical pins of rf power amplifier circuit, including radio frequency input pin, radio frequency output pin, bias voltage pin, supply voltage pin etc..Salient point 805 on GaAs tube core 801 can adopt the mode such as copper projection or stannum ball to manufacture, and in the present embodiment, this is not limited.
Second tube core can be the SOI tube core adopting SOI technology to be made, it is also possible to for the CMOS tube core adopting CMOS technology to be made.In the present embodiment, the second tube core is preferably the SOI tube core adopting SOI technology to be made, SOI tube core 802 has manufactured and designed the functional circuits such as radio-frequency switch circuit, control circuit and input and output matching network, its top layer has manufactured multiple pad 806, the respective electric pin of functional circuit such as including the respective electric pin of radio-frequency switch circuit, the respective electric pin of control circuit and input and output matching network, and with the pin etc. of GaAs die electrical interconnection.
GaAs tube core 801 is by salient point 805 and respective pad 806 solder interconnections on SOI tube core, described electric interconnection can adopt ultra-sonic welded or hot pressing technique to realize, GaAs tube core and the interconnection of SOI tube core back-off in the present embodiment, in the interconnection electrically namely achieving rf power amplifier circuit and radio-frequency switch circuit, control circuit and input and output matching network, it is achieved thereby that the function of complete RF front-end circuit.
As shown in Figure 6, SOI tube core 802 also manufactures multiple wafer through hole 809, in the bottom circuit being signally attached to SOI tube core 802 by SOI tube core 802 top layer circuit.In SOI tube core 802, the size of wafer through hole 809 can design according to the actual requirements, and preferably described wafer through hole 809 is the internal solid hole filling excellent conductive metal.
At the bottom of SOI tube core 802, manufacture capacity cell, plane and stereoscopic electric sensing unit by wiring metal layer process again and passivation layer technological design, as the part in whole radio frequency front end chip circuit, the such as part in radio frequency matching network therein.As shown in Figure 6, the multiple pads 806 on SOI tube core 802 top layer being connected to multiple salient point 808, outer as whole radio frequency front end chip connects pga.Wherein, salient point 808 is copper projection or stannum ball.
Difference according to specifically application, it is possible to described whole radio frequency front end chip is mounted on another one base plate for packaging and uses, or directly against being contained in, printed circuit board (PCB) (PCB) is upper to be used, and this is easy to understanding for those skilled in the art.As it can be seen, in order to facilitate the attachment of whole radio frequency front end chip to use, salient point 808 has higher height so that its with other chips or the attachment face of substrate higher than the floor plane of GaAs tube core 801.
The radio frequency front end chip integration module that the present embodiment provides adopts the mode that the mode of salient point back-off interconnection replaces bonding wire to interconnect, it is achieved thereby that GaAs tube core is heterogeneous integrated with the solid of SOI tube core, while saving chip package space, it also avoid the bigger stray inductance that bonding wire is introduced, there is low cost, high performance advantage.Increase in SOI tube core simultaneously and wafer through hole is set, it is also possible to reduce the radio frequency ground connection parasitic parameter of the rf power amplifier circuit manufactured on GaAs tube core and improve its heat dispersion, more optimizing radio frequency front end chip.
Embodiment six
The present invention also provides for a kind of radio frequency front end chip integrated approach, comprises the following steps:
Thering is provided the first tube core and the second tube core, described first die surfaces is provided with the first tube core joint portion；Described second die surfaces is at least provided with the second tube core joint portion relative with described first tube core joint portion；Wherein, described first tube core is the tube core for amplifying radio-frequency power, and described second tube core is at least one in radio-frequency (RF) switch tube core, controller tube core or output matching network tube core；By described first tube core joint portion and described second tube core joint portion electrical connection.
Heretofore described first die surfaces is provided with the first tube core joint portion, second die surfaces is provided with relative with described first tube core joint portion and electric interconnection the second tube core joint portion, it is electrically connected by the first tube core joint portion and the second tube core joint portion, realize the first tube core and the second die-stack connects, being integrated into of first tube core and the second tube core is three-dimensionally integrated, namely it is three-dimensional integrated, integrated relative to two dimension between tube core and tube core in prior art, save chip package space, improve the integrated level of radio frequency front end chip, reduce the volume of radio frequency front end chip.Simultaneously because the mode that the first tube core joint portion is interconnected by back-off with the second tube core joint portion is connected, it is to avoid use bonding wire connects, and then it also avoid the bigger stray inductance that bonding wire is introduced.
It should be noted that each embodiment in this specification all adopts the mode gone forward one by one to describe, what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar part mutually referring to.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.The multiple amendment of these embodiments be will be apparent from for those skilled in the art, and generic principles defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention is not intended to be limited to the embodiments shown herein, and is to fit to the widest scope consistent with principles disclosed herein and features of novelty.
Claims (12)
1. a radio frequency front end chip integration module, is applied to radio-frequency front-end integrated circuit, it is characterised in that including:
At least one is for amplifying the first tube core of radio-frequency power, and described first die surfaces is provided with the first tube core joint portion；
At least one second tube core, described second tube core is at least one in radio-frequency (RF) switch tube core, controller tube core or output matching network tube core, and described second die surfaces is at least provided with relative with described first tube core joint portion and electric interconnection the second tube core joint portion.
2. radio frequency front end chip integration module according to claim 1, it is characterised in that described first tube core joint portion is the salient point protruding from described first die surfaces.
3. radio frequency front end chip integration module according to claim 2, it is characterised in that described salient point is copper projection or stannum ball.
4. radio frequency front end chip integration module according to claim 1, it is characterised in that described second tube core joint portion is the pad being positioned in described second die surfaces.
5. the radio frequency front end chip integration module according to claim 1-4 any one, it is characterised in that described first tube core is the GaAs tube core adopting GaAs technique to be made, and described first tube core joint portion is GaAs tube core joint portion.
6. the radio frequency front end chip integration module according to claim 1-4 any one, it is characterised in that described second tube core is the SOI tube core adopting SOI technology to be made, and described second tube core joint portion is SOI tube core joint portion.
7. the radio frequency front end chip integration module according to claim 1-4 any one, it is characterised in that described second tube core is the CMOS tube core adopting CMOS technology to be made, and described second tube core joint portion is CMOS tube core joint portion.
8. radio frequency front end chip integration module according to claim 1, it is characterised in that also including base plate for packaging, described second tube core mounts on the package substrate.
9. radio frequency front end chip integration module according to claim 8, it is characterized in that, described second tube core joint portion is pad, and described base plate for packaging is provided with base plate for packaging pad, and the pad on described second tube core is connected on described base plate for packaging pad by bonding wire.
10. radio frequency front end chip integration module according to claim 8, it is characterized in that, described second tube core joint portion is pad, being provided with the base plate for packaging pad relative with described second tube core joint portion on described base plate for packaging, the pad on described second tube core is connected on described base plate for packaging pad by copper projection or stannum ball.
11. radio frequency front end chip integration module according to claim 1, it is characterised in that also include multiple wafer through hole in described second tube core, described wafer through hole is for being connected described second tube core top layer circuit with the bottom circuit of described second tube core.
12. a radio frequency front end chip integrated approach, it is characterised in that comprise the following steps:
Thering is provided the first tube core and the second tube core, described first die surfaces is provided with the first tube core joint portion；Described second die surfaces is at least provided with the second tube core joint portion relative with described first tube core joint portion；Wherein, described first tube core is the tube core for amplifying radio-frequency power, and described second tube core is at least one in radio-frequency (RF) switch tube core, controller tube core or output matching network tube core；
By described first tube core joint portion and described second tube core joint portion electrical connection.
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| CN112865835A (en) * | 2021-01-05 | 2021-05-28 | 上海闻泰信息技术有限公司 | Packaging structure of radio frequency front-end module and mobile terminal |
| CN116314055A (en) * | 2023-02-10 | 2023-06-23 | 宜确半导体（苏州）有限公司 | Semiconductor packaging structure and radio frequency front end module product |
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