CN102695823A - 氮化物结晶的制造方法、制造容器和构件 - Google Patents
氮化物结晶的制造方法、制造容器和构件 Download PDFInfo
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- CN102695823A CN102695823A CN2010800532982A CN201080053298A CN102695823A CN 102695823 A CN102695823 A CN 102695823A CN 2010800532982 A CN2010800532982 A CN 2010800532982A CN 201080053298 A CN201080053298 A CN 201080053298A CN 102695823 A CN102695823 A CN 102695823A
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- nitride
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- autoclave
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
- C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1096—Apparatus for crystallization from liquid or supercritical state including pressurized crystallization means [e.g., hydrothermal]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2009269777 | 2009-11-27 | ||
JP2009-269777 | 2009-11-27 | ||
PCT/JP2010/071041 WO2011065436A1 (ja) | 2009-11-27 | 2010-11-25 | 窒化物結晶の製造方法、製造容器および部材 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102695823A true CN102695823A (zh) | 2012-09-26 |
CN102695823B CN102695823B (zh) | 2015-05-27 |
Family
ID=44066541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080053298.2A Active CN102695823B (zh) | 2009-11-27 | 2010-11-25 | 氮化物结晶的制造方法、制造容器和构件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8609059B2 (zh) |
EP (1) | EP2505696A4 (zh) |
JP (1) | JP5689295B2 (zh) |
KR (1) | KR20120127397A (zh) |
CN (1) | CN102695823B (zh) |
WO (1) | WO2011065436A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103132130A (zh) * | 2013-03-15 | 2013-06-05 | 中国有色桂林矿产地质研究院有限公司 | 一种使用悬浮衬套管氨热法生长氮化镓体单晶的装置和方法 |
CN106319629A (zh) * | 2016-09-19 | 2017-01-11 | 中原特钢股份有限公司 | 一种用于生产氮化镓晶体的超高压容器 |
CN110195258A (zh) * | 2019-07-10 | 2019-09-03 | 上海玺唐半导体科技有限公司 | 氮化镓晶体生长装置及其生长方法 |
CN110329634A (zh) * | 2019-07-10 | 2019-10-15 | 上海玺唐半导体科技有限公司 | 矿化剂胶囊容器和结晶化合物制造过程中矿化剂的使用方法 |
CN110670118A (zh) * | 2019-10-23 | 2020-01-10 | 上海玺唐半导体科技有限公司 | 一种晶体生长装置以及晶体生长方法 |
CN111020708A (zh) * | 2019-12-16 | 2020-04-17 | 上海玺唐半导体科技有限公司 | 热等静压晶体生长装置 |
CN111485289A (zh) * | 2020-04-13 | 2020-08-04 | 上海玺唐半导体科技有限公司 | 加热装置及加热方法 |
CN114294552A (zh) * | 2021-12-16 | 2022-04-08 | 内蒙古北方重工业集团有限公司 | 半导体材料制备用超高压容器及其使用方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2772570A4 (en) | 2011-10-28 | 2015-03-04 | Mitsubishi Chem Corp | METHOD FOR PRODUCING A NITRIDE CRYSTAL AND NITRIDE CRYSTAL |
JP2013124217A (ja) * | 2011-12-13 | 2013-06-24 | Mitsubishi Chemicals Corp | 再生原料の製造方法、窒化物結晶の製造方法および窒化物結晶 |
US9976229B2 (en) | 2012-03-29 | 2018-05-22 | Mitsubishi Chemical Corporation | Method for producing nitride single crystal |
TWI679320B (zh) | 2013-08-08 | 2019-12-11 | 日商三菱化學股份有限公司 | 自立GaN基板、GaN結晶、GaN單結晶之製造方法及半導體裝置之製造方法 |
WO2015107813A1 (ja) | 2014-01-17 | 2015-07-23 | 三菱化学株式会社 | GaN基板、GaN基板の製造方法、GaN結晶の製造方法および半導体デバイスの製造方法 |
EP3126548A1 (en) * | 2014-04-01 | 2017-02-08 | Sixpoint Materials Inc. | High pressure reactor for supercritical ammonia and method for producing crystalline group iii nitride |
WO2024102653A1 (en) * | 2022-11-11 | 2024-05-16 | Slt Technologies, Inc. | Structures for communication, monitoring and control of corrosive process environments at high pressure and high temperature |
Citations (5)
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CN1289867A (zh) * | 1999-09-29 | 2001-04-04 | 中国科学院物理研究所 | 一种氮化镓单晶的热液生长方法 |
JP2003097906A (ja) * | 2001-09-27 | 2003-04-03 | Tokyo Sokki Kenkyusho Co Ltd | ひずみゲージ及びひずみ測定方法 |
JP2003098708A (ja) * | 2001-07-06 | 2003-04-04 | Canon Inc | 画像形成装置及びプロセスカートリッジ |
JP2005008444A (ja) * | 2003-06-17 | 2005-01-13 | Mitsubishi Chemicals Corp | 窒化物結晶の製造方法 |
WO2007008198A1 (en) * | 2005-07-08 | 2007-01-18 | The Regents Of The University Of California | Method for growing group iii-nitride crystals in supercritical ammonia using an autoclave |
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US4900525A (en) * | 1986-08-25 | 1990-02-13 | Gte Laboratories Incorporated | Chemical vapor deposition reactor for producing metal carbide or nitride whiskers |
JP2001080991A (ja) * | 1999-09-08 | 2001-03-27 | Tokai Carbon Co Ltd | 液相エピタキシャル成長用部材 |
US6398867B1 (en) | 1999-10-06 | 2002-06-04 | General Electric Company | Crystalline gallium nitride and method for forming crystalline gallium nitride |
JP2002102671A (ja) * | 2000-09-29 | 2002-04-09 | Toshiba Corp | 高圧耐食性反応容器、処理装置および処理装置の耐食処理方法 |
PL207400B1 (pl) | 2001-06-06 | 2010-12-31 | Ammono Społka Z Ograniczoną Odpowiedzialnością | Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal |
US7125453B2 (en) | 2002-01-31 | 2006-10-24 | General Electric Company | High temperature high pressure capsule for processing materials in supercritical fluids |
JP4513264B2 (ja) * | 2002-02-22 | 2010-07-28 | 三菱化学株式会社 | 窒化物単結晶の製造方法 |
US7063741B2 (en) * | 2002-03-27 | 2006-06-20 | General Electric Company | High pressure high temperature growth of crystalline group III metal nitrides |
PL225427B1 (pl) * | 2002-05-17 | 2017-04-28 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Struktura urządzenia emitującego światło, zwłaszcza do półprzewodnikowego urządzenia laserowego |
EP1514958B1 (en) | 2002-05-17 | 2014-05-14 | Ammono S.A. | Apparatus for obtaining a bulk single crystal using supercritical ammonia |
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JP2005179138A (ja) | 2003-12-22 | 2005-07-07 | Mitsubishi Chemicals Corp | 窒化物の製造方法 |
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JP5023312B2 (ja) | 2005-07-01 | 2012-09-12 | 三菱化学株式会社 | 超臨界溶媒を用いた結晶製造方法、結晶成長装置、結晶およびデバイス |
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KR20110112278A (ko) | 2009-01-08 | 2011-10-12 | 미쓰비시 가가꾸 가부시키가이샤 | 질화물 결정의 제조 방법, 질화물 결정 및 그 제조 장치 |
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-
2010
- 2010-11-25 KR KR1020127013453A patent/KR20120127397A/ko not_active Application Discontinuation
- 2010-11-25 CN CN201080053298.2A patent/CN102695823B/zh active Active
- 2010-11-25 WO PCT/JP2010/071041 patent/WO2011065436A1/ja active Application Filing
- 2010-11-25 EP EP10833282.6A patent/EP2505696A4/en not_active Withdrawn
- 2010-11-26 JP JP2010263564A patent/JP5689295B2/ja active Active
-
2012
- 2012-05-29 US US13/481,989 patent/US8609059B2/en active Active
Patent Citations (5)
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CN1289867A (zh) * | 1999-09-29 | 2001-04-04 | 中国科学院物理研究所 | 一种氮化镓单晶的热液生长方法 |
JP2003098708A (ja) * | 2001-07-06 | 2003-04-04 | Canon Inc | 画像形成装置及びプロセスカートリッジ |
JP2003097906A (ja) * | 2001-09-27 | 2003-04-03 | Tokyo Sokki Kenkyusho Co Ltd | ひずみゲージ及びひずみ測定方法 |
JP2005008444A (ja) * | 2003-06-17 | 2005-01-13 | Mitsubishi Chemicals Corp | 窒化物結晶の製造方法 |
WO2007008198A1 (en) * | 2005-07-08 | 2007-01-18 | The Regents Of The University Of California | Method for growing group iii-nitride crystals in supercritical ammonia using an autoclave |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103132130A (zh) * | 2013-03-15 | 2013-06-05 | 中国有色桂林矿产地质研究院有限公司 | 一种使用悬浮衬套管氨热法生长氮化镓体单晶的装置和方法 |
CN103132130B (zh) * | 2013-03-15 | 2015-11-18 | 中国有色桂林矿产地质研究院有限公司 | 一种使用悬浮衬套管氨热法生长氮化镓体单晶的装置和方法 |
CN106319629A (zh) * | 2016-09-19 | 2017-01-11 | 中原特钢股份有限公司 | 一种用于生产氮化镓晶体的超高压容器 |
CN110195258A (zh) * | 2019-07-10 | 2019-09-03 | 上海玺唐半导体科技有限公司 | 氮化镓晶体生长装置及其生长方法 |
CN110329634A (zh) * | 2019-07-10 | 2019-10-15 | 上海玺唐半导体科技有限公司 | 矿化剂胶囊容器和结晶化合物制造过程中矿化剂的使用方法 |
CN110670118A (zh) * | 2019-10-23 | 2020-01-10 | 上海玺唐半导体科技有限公司 | 一种晶体生长装置以及晶体生长方法 |
CN111020708A (zh) * | 2019-12-16 | 2020-04-17 | 上海玺唐半导体科技有限公司 | 热等静压晶体生长装置 |
CN111485289A (zh) * | 2020-04-13 | 2020-08-04 | 上海玺唐半导体科技有限公司 | 加热装置及加热方法 |
CN114294552A (zh) * | 2021-12-16 | 2022-04-08 | 内蒙古北方重工业集团有限公司 | 半导体材料制备用超高压容器及其使用方法 |
CN114294552B (zh) * | 2021-12-16 | 2024-05-14 | 内蒙古北方重工业集团有限公司 | 半导体材料制备用超高压容器及其使用方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2011065436A1 (ja) | 2011-06-03 |
JP2011132119A (ja) | 2011-07-07 |
EP2505696A1 (en) | 2012-10-03 |
US8609059B2 (en) | 2013-12-17 |
US20120237431A1 (en) | 2012-09-20 |
CN102695823B (zh) | 2015-05-27 |
KR20120127397A (ko) | 2012-11-21 |
EP2505696A4 (en) | 2015-11-18 |
JP5689295B2 (ja) | 2015-03-25 |
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