CN102593087B - 一种用于三维集成混合键合结构及其键合方法 - Google Patents

一种用于三维集成混合键合结构及其键合方法 Download PDF

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CN102593087B
CN102593087B CN201210050563.2A CN201210050563A CN102593087B CN 102593087 B CN102593087 B CN 102593087B CN 201210050563 A CN201210050563 A CN 201210050563A CN 102593087 B CN102593087 B CN 102593087B
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bonding
substrate
adhesion layer
dielectric adhesion
interconnect metal
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CN102593087A (zh
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于大全
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National Center for Advanced Packaging Co Ltd
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Abstract

本发明涉及一种用于三维集成混合键合结构及其键合方法，其包括第一衬底；所述第一衬底上设有与第一衬底电连接的键合互连金属，所述键合互连金属对应与第一衬底相连的另一端部内陷形成凹腔；第一衬底上在键合互连金属的周围覆盖有第一介电粘附层，所述第一介电粘附层包围键合互连金属且第一介电粘附层的高度低于键合互连金属的边缘高度。本发明第一介电粘附层的高度低于凸点顶部边缘的高度，当在压力作用下键合时，凸点顶部边缘与第二衬底焊盘先键合，能够阻挡介电粘附层进入键合互连金属与焊盘结合的表面，从而能够避免造成断路及可靠性问题；结构紧凑，工艺操作方便。

Description

一种用于三维集成混合键合结构及其键合方法
技术领域
本发明涉及一种混合键合结构及其键合方法，尤其是一种用于三维集成混合键合结构及其键合方法，属于集成电路的技术领域。
背景技术
三维集成电路的核心技术包括TSV（硅通孔）制作、晶圆减薄、薄晶圆拿持以及键合技术等。这些技术都存在极大的挑战性。其中键合技术包括了芯片-芯片(chip-to-chip)、芯片-晶圆(chip-to-wafer)以及晶圆-晶圆(wafer-to-wafer)键合等三种方式。对于上述三种键合技术，电气互连有两种材料，一是金属凸点，如Cu，Au等；二是钎料凸点互连，如Sn，In等。
三维集成电路使用金属凸点互连的好处是可以获得很小的互连节距，Cu-Cu凸点键合可以获得优良的电性能和可靠性；其缺点是要求金属凸点具有很高的平整度，通常需要较高的键合温度（>300℃），以及特殊的表面处理以去除金属表面的氧化物。为降低键合温度，研究人员做了很多努力。具有代表性的研究是日本东京大学开发的表面活化键合技术（SAB, Surface activated bonding）。通过CMP（化学机械抛光）平整化，利用干法刻蚀获得纯净金属表面，并在高真空下完成键合过程。该方法虽然实现了了低温键合，但是工艺复杂，产率低，成本高，不适于大规模产业应用；具体见参考文献T. Suga, “Feasibility of surface activated bonding for ultra-fine pitch interconnection”, Proc. 2000 IEEE Electronic Components and Technolgoy Conference (ECTC), 2000, pp.702-705.和T.H. Kim, M.M.R. Howlader, et al., “Room temperature Cu-Cu direct bonding using surface activated bonding method”, J. Vac. Sci. Technol. A, 21(2), 2003, pp. 449-453。
与金属凸点相比，钎料互连的主要优点是钎料液/固反应可以减小对键合界面平整度的要求，具体见参考文献K. Sakuma, P. S. Andry, C. K. Tsang, S. L. Wright, et al., “3D Chip-Stacking Technology with Through-Silicon Vias and Low-Volume Lead-free Interconnections”, IBM J. RES. & DEV. 52(6), 2008, p611-631。电镀凸点，特别是铜柱钎料凸点具有较好的电性能和可靠性，并能满足细节距和低成本要求，因而受到工业界青睐。由于三维集成往往需要多层芯片（晶圆）堆叠，因此需要保证后续的堆叠不影响已形成的互连结构。因此在钎料凸点键合基础上，瞬态液相（TLP, transient liquid phase）键合应用受到重视。所谓瞬态液相键合是指低熔点钎料键合后完全转变成金属间化合物（IMC），可以保证多层芯片堆叠的稳定性，具体见参考文献R. Agarwal, W. Zhang, P. Limaye, R. Labie, B. Dimcic, A. Phommahaxay, and P. Soussan, “Cu/Sn Microbumps for 3D TSV Chip Stacking”, Proc. 2010 IEEE Electronic Components and Technolgoy Conference (ECTC), 2010, pp. 858-863。
为解决超细节距凸点互连底部填充工艺难题，提高凸点互连的可靠性，混合键合（hybrid bonding）方法在3D IC中日益受到重视。混合键合即是在待键合的衬底上下表面采用凸点和介电粘附层同时进行键合，具体见参考文献S. J. Koester, A. M. Young, R. R. Yu, S. Purrshothaman, et al., “Wafer-level 3D Integration Technology,” IBM J. RES. & DEV. 52(6), 2008, p583-597和C. T. Ko, Z. C. Hsiao, H. C. Fu, K. N. Chen, W. C. Lo, Y. H. Chen, “Wafer-to-wafer Hybrid Bonding Technology for 3D IC”, 3rd Electronic System-Integration Technology Conference (ESTC), 2010, pp.1 – 5。常用的介电粘附层为BCB（干刻蚀型苯环丙丁烯）、SU-8（近紫外负性光刻胶），以及PI（聚酰亚胺）等聚合物材料或者无机物SiO2。键合采用热压键合方式，金属/钎料凸点实现冶金互连，芯片间和凸点间的空隙则由介电粘附层通过热压固化填充，从而提高芯片间键合的结合力。
混合键合研究也存在诸多问题，材料与工艺需要优化，缺乏可靠性研究。介电粘附层，特别是聚合物常常会挤压而流到金属键合界面，造成断路和可靠性问题。需要改进键合技术来避免这个问题。进一步地，由于互连密度的增加，键合所需的压力越来越大，这对于三维集成，特别是带有TSV结构的薄芯片会带来损坏。因此，需要低压力键合方法。
发明内容
本发明的目的是克服现有技术中存在的不足，提供一种用于三维集成混合键合结构及其键合方法，其结构紧凑，工艺操作方便，提高键合的可靠性。
按照本发明提供的技术方案，所述用于三维集成混合键合结构，包括第一衬底；所述第一衬底上设有与第一衬底电连接的键合互连金属，所述键合互连金属对应与第一衬底相连的另一端部内陷形成凹腔，键合互连金属对应设置凹腔的端部边缘形成凸点顶部边缘；第一衬底对应形成键合互连金属的表面覆盖有第一介电粘附层，所述第一介电粘附层包围键合互连金属且第一介电粘附层的高度低于键合互连金属的高度。
所述键合互连金属为高温键合金属。所述高温键合金属的材料为Cu、Ni、Al、Pt、Pd或Au中的一种或几种。
所述键合互连金属包括高温键合金属及位于所述高温键合金属一端的低熔点钎料，键合互连金属中的高温键合金属与第一衬底对应相连，并在低熔点钎料的端部内陷形成凹腔；第一介电粘附层的高度低于低熔点钎料形成凹腔端部的高度。
所述低熔点钎料为锡基合金或铟基合金。所述第一介电粘附层的材料包括BCB、SU-8、PI聚合物或SiO2。
所述第一衬底通过键合互连金属与第二键合体对应配合，第二键合体包括第二衬底，所述第二衬底的表面上设有与第二衬底电连接的焊盘，第二衬底对应形成焊盘的表面覆盖第二介电粘附层；键合互连金属通过凸点顶部边缘与焊盘对应接触，并在所需的温度及压力下紧密结合，且第一介电粘附层与第二介电粘附层粘结后连成一体。
所述焊盘的材料为高温金属或低熔点钎料。所述第二介电粘附层的材料包括BCB、SU-8、PI聚合物或SiO2。
所述第二衬底的材料包括硅。
一种用于三维集成混合键合结构的键合方法，所述键合方法包括如下步骤：
a、提供第一键合体，所述第一键合体上相应键合互连金属的端部形成凹腔及凸点顶部边缘；
b、提供第二键合体，所述第二键合体上包括焊盘及第二介电粘附层；
c、将键合互连金属对应形成凸点顶部边缘的端部与第二键合体上的焊盘定位接触；
d、在所需的键合温度及压力下，键合互连金属对应形成凸点顶部边缘的端部与焊盘紧密接触，第一键合体上的第一介电粘附层与第二键合体上的第二介电粘附层粘结成一体。
所述步骤a中，包括如下步骤：
a1、提供第一衬底，并在所述第一衬底的表面制作与第一衬底电连接的种子层；
a2、在第一衬底对应形成种子层的表面涂覆第一光刻胶层，并光刻、显影曝光后形成所需图形；
a3、在上述第一衬底上电镀形成所需高度与形状的凸点材料，以形成键合互连金属；
a4、去除上述第一光刻胶层，并刻蚀第一衬底上对应裸露的种子层；
a5、在上述第一衬底上形成第一介电粘附层，所述第一介电粘附层覆盖在第一衬底的表面并覆盖键合互连金属端部的凸点顶部边缘；
a6、通过离子刻蚀去除覆盖于键合互连金属端部凸点顶部边缘上的第一介电粘附层，并使得第一介电粘附层的高度低于凸点顶部边缘的高度，以形成所需的第一键合体。
所述第一介电粘附层通过甩胶覆盖在第一衬底及键合互连金属上。所述步骤a3中，电镀形成所需高度的形状与凸点材料包括高温金属或低熔点钎料。
本发明的优点：第一衬底上设有与第一衬底电连接的键合互连金属，所述键合互连金属对应与第一衬底相连的另一端部内陷形成凹腔，键合互连金属对应设置凹腔的端部边缘形成凸点顶部边缘；第一衬底对应形成键合互连金属的表面覆盖有第一介电粘附层，所述第一介电粘附层包围键合互连金属且第一介电粘附层的高度低于凸点顶部边缘的高度；当通过键合互连金属与焊盘键合时，第一介电粘附层的高度低于凸点顶部边缘，当在压力作用下键合时，凸点顶部边缘与焊盘接触键合能够阻挡介电粘附层进入键合互连金属与焊盘结合的表面，从而能够避免造成断路及可靠性问题；结构紧凑，工艺操作方便。
附图说明
图1为本发明的结构示意图。
图2为本发明键合互连金属的另一种结构示意图。
图3为~图6为本发明键合互连金属形成的具体步骤剖视图，其中：
图3为电镀形成键合互连金属后的剖视图。
图4为去除光刻胶层并刻蚀种子层后的剖视图。
图5为形成第一介质粘附层后的剖视图。
图6为形成第一键合体后的剖视图。
图7~图9为本发明与第二键合体键合的具体步骤剖视图，其中：
图7为提供第一键合体与第二键合体后的剖视图。
图8为通过凸点与焊盘相接触的剖视图。
图9为第一键合体与第二键合体键合后的剖视图。
图10~图12为本发明与第二键合体键合的具体步骤剖视图，其中：
图10为提供第一键合体与第二键合体后的剖视图。
图11为通过凸点与焊盘相接触的剖视图。
图12为第一键合体与第二键合体键合后的剖视图。
附图标记说明：1-第一键合体、2-第二键合体、10-第一衬底、20-第一介电粘附层、21-第一光刻胶层、22-键合互连孔、25-第二介电粘附层、30-高温键合金属、31-凹腔、40-低熔点材料键合体、50-焊盘、60-凸点顶部边缘及70-第二衬底。
具体实施方式
下面结合具体附图和实施例对本发明作进一步说明。
如图1和图2所示：为了避免现有键合过程中造成断路与可靠性问题，本发明包括第一键合体1，第一键合体1包括第一衬底10；所述第一衬底10上设有与第一衬底10电连接的键合互连金属，所述键合互连金属对应与第一衬底10相连的另一端部内陷形成凹腔31，即在键合互连金属对应形成凹腔31的端部形成凸点顶部边缘60，第一衬底10对应形成键合互连金属的表面覆盖有第一介电粘附层20，所述第一介电粘附层20包围键合互连金属且第一介电粘附层20的高度低于键合互连金属端部的高度；即第一介电粘附层20的高度低于凸点顶部边缘60。图1和图2分别示出了键合互连金属的不同结构，其中，图1中键合互连金属全部采用高温键合金属30，图2中键合互连金属包括高温键合金属30及位于所述高温键合金属30端部的低熔点材料键合体40，在低熔点材料键合体40端部通过内陷形成凹腔31。第一介电粘附层20的高度低熔点钎料40形成凹腔31端部的高度。
所述高温键合金属30的材料为Cu、Ni、Al、Pt、Pd、或Au中的一种或几种。所述低熔点钎料40为锡基合金或铟基合金。所述第一介电粘附层20的材料包括BCB、SU-8、、PI聚合物或SiO2。
如图9和图12所示：为本发明第一键合体1与第二键合体2键合后的结构示意图。第二键合体2包括第二衬底70，第二衬底70的表面设有焊盘50，焊盘50与第二衬底70电连接，第二衬底70的材料包括硅。第二衬底70对应形成焊盘50的表面覆盖有第二介电粘附层25，焊盘50与第二介电粘附层25之间的高度关系应与凸点顶部边缘60与第一介电粘附层20之间的高度关系相对应，以避免通过凸点顶部边缘60与焊盘50之间键合连接时，第一介电粘附层20或第二介电粘附层25间压入第一介电粘附层20或第二介电粘附层25，以不会造成断路及可靠性问题为准。本发明的实施例中，焊盘50的高度不高于第二介电粘附层25的高度，图9为焊盘50的高度与第二介电粘附层25高度相同键合后的结构图，图12为焊盘50的高度低于第二介电粘附层25高度键合后的结构图。
焊盘50可以为高温键合金属，也可以为低熔点钎料或两种材料的组合，第二介电粘附层25的材料可以与第一介电粘附层20的材料相同。键合时，第一键合体1通过键合互连金属上的凸点顶部边缘60与焊盘50相接触，在所需的键合温度与键合压力作用下，键合互连金属与焊盘50能紧密接触，同时第一介电粘附层20与第二介电粘附层25粘结后连成一体。由于凸点顶部边缘60位于键合互连金属的端部边缘，第一介电粘附层20的高度低于凸点顶部边缘60，当在压力作用下键合时，凸点顶部边缘60能够阻挡第一介电粘附层20进入键合互连金属与焊盘25结合的表面，从而能够避免造成断路及可靠性问题。键合连接后，第一衬底10与第二衬底70通过键合互连金属及焊盘50电连接。
如图7~图9及图10~图12所示：上述键合结构的键合方方法包括如下步骤：
a、提供第一键合体1，所述第一键合体1上相应键合互连金属的端部形成凹腔31及凸点顶部边缘60；
如图3~图6所示：为本发明第一键合体1的形成过程，第一键合体1的制备过程包括如下步骤：
a1、提供第一衬底10，并在所述第一衬底10的表面制作与第一衬底10电连接的种子层；第一衬底10为导体或半导体材料，种子层与第一衬底10电连接；
a2、在第一衬底（10）对应形成种子层的表面涂覆第一光刻胶层（21），并光刻、显影曝光后形成所需图形；
a3、在上述第一衬底10上电镀形成所需高度与形状的凸点材料，以形成键合互连金属；
如图3所示：所述键合互连金属的形状与高度可以通过电镀形成，键合互连金属的可以为图1或图2中的结构；键合互连金属通过种子层与第一衬底10电连接；凸点可以为高温键合金属30或高温键合金属30与低熔点钎料40的组合，以形成键合互连金属；
a4、去除上述第一光刻胶层21，并刻蚀第一衬底10上对应裸露的种子层；
通过将裸露的种子层刻蚀，能够避免第一衬底10上键合互连金属间的绝缘隔离，如图4所示；
a5、在上述第一衬底10上形成第一介电粘附层20，所述第一介电粘附层20覆盖在第一衬底10的表面并覆盖键合互连金属端部的凸点顶部边缘60；
如图5所示：第一介电粘附层20通过甩胶或其他方式形成；
a6、通过离子刻蚀去除覆盖于键合互连金属端部凸点顶部边缘60上的第一介电粘附层20，并使得第一介电粘附层20的高度低于凸点顶部边缘60的高度，以形成所需的第一键合体1，如图6所示；
b、提供第二键合体2，所述第二键合体2上包括焊盘50及第二介电粘附层25；
c、将键合互连金属对应形成凸点顶部边缘60的端部与第二键合体2上的焊盘50定位接触；
d、在所需的键合温度及压力下，键合互连金属对应形成凸点顶部边缘60的端部与焊盘50紧密接触，第一键合体1上的第一介电粘附层20与第二键合体2上的第二介电粘附层25粘结成一体。所述键合温度及压力根据键合互连金属及焊盘50的材料来决定，相应的压力与所需的温度具有对应关系，与常规的键合温度及压力相一致，此处不在详述。
第二键合体2上焊盘50与第二介电粘附层25的高度具有相应的关系，本发明的实施例中焊盘50的高度不高于第二介电粘附层25的高度。当焊盘50的高度与第二介电粘附层25的高度一致时，第一键合体1与第二键合体2的键和步骤参考图7~图9所示；当焊盘50的高度低于第二介电粘附层25的高度时，第一键合体1与第二键合体2的键合步骤参考图10~图12所示。当焊盘50的高度低于第二介电粘附层25的高度时，有利于凸点顶部边缘60与焊盘50接触时的定位，同时在键合过程中不容易错位。
本发明第一衬底10上设有与第一衬底10电连接的键合互连金属，所述键合互连金属对应与第一衬底10相连的另一端部内陷形成凹腔31，键合互连金属对应设置凹腔31的端部边缘形成凸点顶部边缘60；第一衬底10对应形成键合互连金属的表面覆盖有第一介电粘附层20，所述第一介电粘附层20包围键合互连金属且第一介电粘附层20的高度低于键合互连金属的高度；当通过键合互连金属与焊盘50键合时，凸点顶部边缘60位于键合互连金属的端部边缘，第一介电粘附层20的高度低于凸点顶部边缘60，当在压力作用下键合时，凸点顶部边缘60能够阻挡第一介电粘附层20进入键合互连金属与焊盘25结合的表面，从而能够避免造成断路及可靠性问题；结构紧凑，工艺操作方便。

Claims (2)

1.一种用于三维集成混合键合结构，包括第一衬底（10）；其特征是：所述第一衬底（10）上设有与第一衬底（10）电连接的键合互连金属，所述键合互连金属对应与第一衬底（10）相连的另一端部内陷形成凹腔（31），键合互连金属对应设置凹腔（31）的端部边缘形成凸点顶部边缘（60）；第一衬底（10）对应形成键合互连金属的表面覆盖有第一介电粘附层（20），所述第一介电粘附层（20）包围键合互连金属且第一介电粘附层（20）的高度低于键合互连金属的高度；
所述键合互连金属为高温键合金属（30）；
所述高温键合金属（30）的材料为Cu、Ni、Al、Pt、Pd或Au中的一种或几种；
所述键合互连金属包括高温键合金属（30）及位于所述高温键合金属（30）一端的低熔点钎料（40），键合互连金属中的高温键合金属（30）与第一衬底（10）对应相连，并在低熔点钎料（40）的端部内陷形成凹腔（31）；第一介电粘附层（20）的高度低于低熔点钎料（40）形成凹腔（31）端部的高度；
所述低熔点钎料（40）为锡基合金或铟基合金；
所述第一介电粘附层（20）的材料包括BCB、SU-8、PI聚合物或SiO2；
所述第一衬底（10）通过键合互连金属与第二键合体（2）对应配合，第二键合体（2）包括第二衬底（70），所述第二衬底（70）的表面上设有与第二衬底（70）电连接的焊盘（50），第二衬底（70）对应形成焊盘（50）的表面覆盖第二介电粘附层（25）；键合互连金属通过凸点顶部边缘（60）与焊盘（50）对应接触，并在所需的温度及压力下紧密结合，且第一介电粘附层（20）与第二介电粘附层（25）粘结后连成一体；
所述焊盘（50）的材料为高温金属或低熔点钎料；
所述第二介电粘附层（25）的材料包括BCB、PI聚合物或SiO2；
所述第二衬底（70）的材料包括硅。
2.一种用于三维集成混合键合结构的键合方法，其特征是，所述键合方法包括如下步骤：
（a）、提供第一键合体（1），所述第一键合体（1）上相应键合互连金属的端部形成凹腔（31）及凸点顶部边缘（60）；
（b）、提供第二键合体（2），所述第二键合体（2）上包括焊盘（50）及第二介电粘附层（25）；
（c）、将键合互连金属对应形成凸点顶部边缘（60）的端部与第二键合体（2）上的焊盘（50）定位接触；
（d）、在所需的键合温度及压力下，键合互连金属对应形成凸点顶部边缘（60）的端部与焊盘（50）紧密接触，第一键合体（1）上的第一介电粘附层（20）与第二键合体（2）上的第二介电粘附层（25）粘结成一体；
所述步骤（a）中，包括如下步骤：
（a1）、提供第一衬底（10），并在所述第一衬底（10）的表面制作与第一衬底（10）电连接的种子层；
（a2）、在第一衬底（10）对应形成种子层的表面涂覆第一光刻胶层（21），并光刻、显影曝光后形成所需图形；
（a3）、在上述第一衬底（10）上电镀形成具有所需高度与形状的凸点材料，以形成键合互连金属；
（a4）、去除上述第一光刻胶层（21），并刻蚀第一衬底（10）上对应裸露的种子层；
（a5）、在上述第一衬底（10）上形成第一介电粘附层（20），所述第一介电粘附层（20）覆盖在第一衬底（10）的表面并覆盖键合互连金属端部的凸点顶部边缘（60）；
（a6）、通过离子刻蚀去除覆盖于键合互连金属端部凸点顶部边缘（60）上的第一介电粘附层（20），并使得第一介电粘附层（20）的高度低于凸点顶部边缘（60）的高度，以形成所需的第一键合体（1）；
所述第一介电粘附层（20）通过甩胶覆盖在第一衬底（10）及键合互连金属上；
所述步骤（a3）中，电镀形成所需高度与形状的凸点材料包括高温金属或低熔点钎料。
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