CN102169845A - 一种用于三维封装的多层混合同步键合结构及方法 - Google Patents

一种用于三维封装的多层混合同步键合结构及方法 Download PDF

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CN102169845A
CN102169845A CN2011100426439A CN201110042643A CN102169845A CN 102169845 A CN102169845 A CN 102169845A CN 2011100426439 A CN2011100426439 A CN 2011100426439A CN 201110042643 A CN201110042643 A CN 201110042643A CN 102169845 A CN102169845 A CN 102169845A
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bonding
mixed
substrate
metal
multilayer
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CN102169845B (zh
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于大全
王惠娟
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National Center for Advanced Packaging Co Ltd
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Institute of Microelectronics of CAS
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Priority to PCT/CN2012/071116 priority patent/WO2012113297A1/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
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Abstract

本发明涉及一种用于三维封装的多层混合同步键合结构及方法。所述方法包括：在一个待混合键合衬底的金属焊盘表面上形成硬金属锥形阵列；在另一个待混合键合衬底的金属焊盘表面上形成软金属层；在两个待混合键合衬底的非金属焊盘表面形成介电粘附层；将硬金属锥形阵列和软金属层对准，进行加热和加压后，使得锥形金属阵列***到软金属层中，同时介电粘附层相互结合，形成一种混合预键合结构；再进行加热，使***到软金属层中的锥形金属阵列形成金属间化合物，介电粘附层固化结合。与传统的键合方法相比，本发明方法成品率高，节省键合时间，降低成本，同时提高产品的可靠性。

Description

一种用于三维封装的多层混合同步键合结构及方法
技术领域
本发明涉及一种用于三维封装的多层混合同步键合结构及方法，属于微电子封装技术领域。
背景技术
随着人们对电子产品的要求向小型化、多功能、环保型等方向的发展，人们努力寻求将电子***越做越小，集成度越来越高，功能越做越多，越来越强。由此产生了许多新技术、新材料和新设计，例如三维堆叠封装等技术就是这些技术的典型代表，该结构可直接将多个裸芯片或者衬底通过键合的方式堆叠起来，实现在三维方向上的金属互联结构，大大减小互联距离，提高传输速度，从而实现一个***或者某个功能在三维结构上的集成。而其中键合技术是实现三维堆叠封装结构比必不可少，也是最关键的技术重点和难点，常用的键合方法有直接氧化物键合，金属键合如铜铜键合，还有特殊有机聚合物的键合如BCB。同时也有不同材料之间的混合键合，如聚合物和金属的混合键合方法等，通常这些方法都是通过高的温度和高的压力条件下，一层一层来键合。所以这些传统的键合方法都存在以下的一些问题：
1)键合的条件对结构本身的影响，如温度和压力，会在一定程度上影响结构本身的可靠性和产率；2)由于多层的堆叠需要一层一层去键合，下一次的键合必然会对上一次造成影响，如键合精度和结合强度等都有一定的减小，也就是多次键合比单词键合的精度以及结合的强度都会有一定程度的减小；3)另外由于键合过程中存在一个等待升温和降温的时间，这对于需要量产的多次键合结构，势必会影响其整体的键合速度以及产量，从而大大增加其成本。
由于这种传统的方法复杂，存在很多困难，对产品的成品率和可靠性造成极大的影响。各种新的工艺，材料以及键合方法也逐步被提出和讨论，例如采用混合键合来加强键合的结合力，混合键合一般是指在待键合的衬底上下表面采用金属材料和介电粘附层同时混合来键合，常用的混合键合采用不同的如BCB，SU-8，AL-聚合物以及PI等这几种聚合材料来作为混合键合时的介电粘附层，在键合以后，金属采用热压键合或者共熔合金，粘附层则通过热压后固化粘结在一起，从而提高键合的结合力。采用特殊的键合结构来降低键合温度的各种低温键合方法，如日立有限公司提出通过设计焊球以及焊盘的形状而提出的一种低温可控制的键合方法，在键合上层的焊盘上电镀成凸起的钉状结构，而在键合的下层焊盘上开出盲孔，最后上下两层键合的时候，钉与孔之间形成一种机械结合的结构，从而能达到低温键合的目的。而比利时的微电子中心也提出一种选择性的混合键合方法，主要用于将多个不同的裸片同时与衬底键合的混合键合方法，也是利用了两种不同的材料，即介质材料和金属材料的混合键合技术来达到一种同步的效果。
还有一种利用材料的结果与属性进行键合的方法，在上下焊盘上采用两种不同的金属，其中上焊盘表面形成微星锥状结构，直接***下层的软金属中来完成机械。如专利US6204089B1提到，在焊盘的表面形成一种锥形焊球，以穿透用于做粘合或者绝缘的不导电层，然后再进一步来键合，与电极相连，构成电学连接；而EP480194A也提到，通过电化学方法在金属的表面形成高度约60um～80um的锥形，并将一表面或者两表面有此结构的金属互联，以形成稳固的连接结构；另外US6761803B2 直接在硅基的表面通过光刻涂覆保护后，将硅片置于离子束反应腔，并通过合适的条件控制在硅的表面形成微凸起结构，使这种结构的形成和应用得以实现。但是以上的这些方法都存在一定的缺陷和问题，如难以大规模量产，而且每个方法都只解决了一个侧面问题，还是存在键合时间长，键合温度高等问题，这严重影响了生产效率和产品可靠性，引起晶圆翘曲等。
发明内容
本发明针对现有键合结构及方法存在的键合时间长，键合温度高，严重影响了生产效率和产品可靠性，引起晶圆翘曲的不足，提供一种用于三维封装的多层混合同步键合结构及方法。
本发明解决上述技术问题的技术方案如下：一种用于三维封装的多层混合同步键合方法包括：
步骤1、在n个晶圆或者芯片垂直堆叠的结构中任一个互连界面上均包括待混合键合的上衬底和待混合键合的下衬底，在所述待混合键合的上衬底和待混合键合的下衬底上分别形成通孔，所述通孔内填充金属后形成金属互联结构，在所述金属互联结构的表面形成金属焊盘，其中，n≥2；
步骤2、在所述待混合键合的上衬底金属焊盘的表面形成硬金属层；
步骤3、在所述硬金属层的表面形成硬金属锥形凸点阵列；
步骤4、在所述待混合键合的下衬底金属焊盘的表面形成由软钎焊材料构成的软金属层；
步骤5、在所述待混合键合的上衬底和待混合键合的下衬底非金属焊盘的表面形成介电粘附层；
步骤6、将所述待混合键合的上衬底和待混合键合的下衬底对准；
步骤7、在所述待混合键合的上衬底和待混合键合的下衬底对准后，在低于软钎焊材料熔点而高于介电粘附层软化温度的温度范围内，施加5千牛顿～90千牛顿的压力，压力大小取决于介电粘附层的材料以及键合基板的大小，如对八吋的晶圆采用BCB做粘附层，需要施加约10KN的压力，使所述待混合键合的上衬底上的硬金属锥形凸点阵列***待混合键合的下衬底的软金属层中，同时所述待混合键合的上衬底上的介电粘附层和待混合键合的下衬底上的介电粘附层也结合在一起，从而形成一个稳固的预键合结构；
步骤8、将所述稳固的预键合结构在高于软钎焊材料熔点的温度下进行回流，具体的回流条件取决于钎料的成分，如含SnCu和SnAgCu的无铅钎料回流温度为210℃～230℃，时间为1分钟～2分钟，如含In的无铅钎料回流温度为130℃～180℃，时间为1分钟～2分钟，使***软金属层中的硬金属锥形凸点阵列形成冶金结合合金，同时所述待混合键合的上衬底上的介电粘附层和待混合键合的下衬底上的介电粘附层也固化结合在一起。
即本发明的键合方法可应用于晶圆到晶圆（Wafer-to-Wafer）的键合，芯片到晶圆（Chip-to-Wafer）的键合，以及芯片到芯片的键合（Chip-to-Chip），或者先将多层裸片预键合在一起，再将裸片与晶圆键合在一起，最后再将多层晶圆之间来混合键合等多种形式的复合形式来实现三维堆叠。
在上述技术方案的基础上，本发明还可以做如下改进。
进一步，所述步骤1中待混合键合的上衬底/待混合键合的下衬底为硅基板、化合物、陶瓷或者玻璃衬底。
进一步，所述步骤3中锥形凸点阵列的粗糙度-轮廓算术平均偏差Ra大于0.1um，小于10um。
进一步，所述步骤3中锥形凸点阵列由镍、铜、钨和铁中任一种硬金属构成，其硬度大于500HV。
进一步，所述步骤4中软金属层由Sn、In、SnIn、SnAg、SnCu和SnAgCu中任一种软钎焊材料构成，其硬度小于100HV。
进一步，所述步骤5中介电粘附层由苯并环丁烯树脂BCB或者聚酰亚胺PI构成。
进一步，所述步骤7中施加5千牛顿～90千牛顿的压力。
进一步，在所述多层混合同步键合中，所述n个晶圆或者芯片依次对准后，通过n-1次加温和加压进行多次预键合结合在一起。
进一步，在所述多层混合同步键合中，所述n个晶圆或者芯片依次对准后，通过一次加温和加压进行一次预键合结合在一起。
本发明还提供一种解决上述技术问题的技术方案如下：一种由上述的用于三维封装的多层混合同步键合方法制成的多层混合同步键合结构。
本发明的有益效果是：本发明通过改进工艺与材料设计来实现混合堆叠键合技术，核心思想是利用混合键合方法，即用聚合物胶和临时机械方法结合焊点。这种方法与传统的键合方法相比，有着诸多优点，首先，不同于传统的三维堆叠时采用一层一层的键合，每多堆叠一层衬底，或者是裸片，都需要进行一次键合过程，即都需要一次经过高温和高雅的过程，而本发明采用所有衬底同时键合，可节省时间成本，大大提高了键合的效率，提高结构的成品率，提高产品的可靠性，另外通过机械结合可减小键合时需要的温度要求；第二，本发明采用混合键合的方法，除了在焊盘区域形成金属化合物的键后，还在非焊盘区域形成粘附层之间的键合，增加了键合的结合强度和可靠性；第三，在预键合过程中采用硬金属表面锥形凸点阵列***软金属中的方法，可以形成稳固的预键合结构，从而保证整个结构的三维同步键合的精度要求。
附图说明
图1为本发明实施例上下键合后焊盘表面的结构示意图；
图2a至图2h为本发明实施例两层衬底之间完成混合键合的工艺过程对应的结构示意图；
图3a至图3c为本发明实施例三维多层堆叠键合的工艺过程对应的结构示意图；
图4为本发明实施例其他多层混合键合完成三维结构后的结构示意图。
具体实施方式
以下结合附图对本发明的原理和特征进行描述，所举实例只用于解释本发明，并非用于限定本发明的范围。
图1为本发明实施例上下键合后焊盘表面的结构示意图，以硅基版为例，并在每一层的硅基版上形成金属通孔以形成互联，并在上下金属互联结构的表面焊盘上形成特殊的键合结构如图1所示，从图中可以看出在上下衬底上有一层金属焊盘101，优选为金属铜，可以按需要在上焊盘上形成硬金属层102，可为金属铬，钛，镍等与焊盘接触良好的导电金属，然后在上焊盘表面形成的锥形凸点阵列103，同时在下焊盘上形成一层软金属，如金属锡104。
图2a至图2h为本发明实施例两层衬底之间完成混合键合的工艺过程对应的结构示意图：
步骤1，如图2a所示，以硅基版为例，并在待混合键合的上衬底201和待混合键合的下衬底202上形成TSV孔以形成金属互联结构203，作为待混合键合的衬底，TSV孔一般为金属铜；
步骤2，如图2b所示，在金属互联结构表面形成金属焊盘204，该金属一般为铜或者镍金，形成方法可为电镀等，在金属焊盘204的表面形成硬金属层；
步骤3，如图2c，在待键合的上衬底硬金属层的表面形成一层硬金属锥形凸点阵列205；
步骤4，如图2d，在待键合的下衬底金属焊盘表面形成一定厚度的软金属206；
步骤5，如图2e，在待键合的上下衬底的非金属焊盘表面涂敷形成一定厚度的介电粘附层207；
步骤6，如图2f，将待键合的上下衬底对准；
步骤7，如图2g，在待键合的上下衬底对准后，在低温下预键合在一起，这时焊盘上的锥形凸点阵列205***下焊盘的软金属206中，同时上下介质粘附层207也结合在一起，这样则可以形成一个稳固的预键合结构；
步骤8，如图2h，将待键合的上下衬底的在高温下回流，使金属部分形成冶金结合合金208，粘附层部分也固化结合在一起。
冶金结合合金208的成分为金属间化合物，其类型与具体的软钎焊材料和硬金属材料的选择相关。依据软金属层和硬金属锥形凸点阵列厚度和回流温度，软金属层中的软钎焊材料在回流后存在两种可能，即完全转变为金属间化合物或者还有残余钎料。
同时也可采用上述的方法将多层衬底预键合在一起后，通过一定的温度和压力来回流，使焊盘处形成金属化合物键合，在介质粘附区域也形成好的结合，从而实现整个结构的同步键合，如图3a至图3c为本发明实施例三维多层堆叠混合键合的工艺过程对应的结构示意图。其中图3a为在堆叠预键合的多层衬底晶圆结构示意图，其中每一个待键合衬底晶圆，如第一待混合键合衬底310、第二待混合键合衬底320、第n待混合键合衬底3n0都有其结构，如图3b所示，最后形成的结构示意图如图3c所示。
将另外，该衬底为硅基衬底，也可为其他待键合的三维结构，如直接chip-to-chip，可以用二层以及二层以上的键合结构，或者将这些结构复合起来使用，具体结构示意图如图4所示，其中410为待键合的衬底，420为一个三层的已经键合堆叠好的结构，430则为一个两层的已经键合堆叠好的结构。
以上所述仅为本发明的较佳实施例，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

1.一种用于三维封装的多层混合同步键合方法，其特征在于，所述同步键合方法包括：
步骤1、在n个晶圆或者芯片垂直堆叠的结构中任一个互连界面上均包括待混合键合的上衬底和待混合键合的下衬底，在所述待混合键合的上衬底和待混合键合的下衬底上分别形成通孔，所述通孔内填充金属后形成金属互联结构，在所述金属互联结构的表面形成金属焊盘金属互联结构金属互联结构，其中，n≥2；
步骤2、在所述待混合键合的上衬底金属焊盘的表面形成硬金属层；
步骤3、在所述硬金属层的表面形成硬金属锥形凸点阵列； 
步骤4、在所述待混合键合的下衬底金属焊盘的表面形成由软钎焊材料构成的软金属层； 
步骤5、在所述待混合键合的上衬底和待混合键合的下衬底非金属焊盘的表面形成介电粘附层； 
步骤6、将所述待混合键合的上衬底和待混合键合的下衬底对准； 
步骤7、在所述待混合键合的上衬底和待混合键合的下衬底对准后，在低于软钎焊材料熔点而高于介电粘附层软化温度的温度范围内，施加压力，使所述待混合键合的上衬底上的硬金属锥形凸点阵列***待混合键合的下衬底的软金属层中，同时所述待混合键合的上衬底上的介电粘附层和待混合键合的下衬底上的介电粘附层也结合在一起，从而形成一个稳固的预键合结构；
步骤8、将所述稳固的预键合结构在高于软钎焊材料熔点的温度下进行回流，使***软金属层中的硬金属锥形凸点阵列形成冶金结合合金，同时所述待混合键合的上衬底上的介电粘附层和待混合键合的下衬底上的介电粘附层也固化结合在一起。
2.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，所述步骤1中待混合键合的上衬底/待混合键合的下衬底为硅基板、化合物、陶瓷或者玻璃衬底。
3.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，所述步骤3中锥形凸点阵列的轮廓算术平均偏差大于0.1um，小于10um。
4.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，所述步骤3中锥形凸点阵列由镍、铜、钨和铁中任一种硬金属构成，其硬度大于500HV。
5.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，所述步骤4中软金属层由Sn、In、SnIn、SnAg、SnCu和SnAgCu中任一种软钎焊材料构成，其硬度小于100HV。
6.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，所述步骤5中介电粘附层由苯并环丁烯树脂或者聚酰亚胺构成。
7.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，所述步骤7中施加5千牛顿～90千牛顿的压力。
8.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，在所述多层混合同步键合中，所述n个晶圆或者芯片依次对准后，通过n-1次加温和加压进行多次预键合结合在一起。
9.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，在所述多层混合同步键合中，所述n个晶圆或者芯片依次对准后，通过一次加温和加压进行一次预键合结合在一起。
10.一种由如权利要求1至9任一所述的用于三维封装的多层混合同步键合方法制成的多层混合同步键合结构。
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