CN102280478A - 可堆栈式功率mosfet、功率mosfet堆栈及其制备工艺 - Google Patents
可堆栈式功率mosfet、功率mosfet堆栈及其制备工艺 Download PDFInfo
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- CN102280478A CN102280478A CN2011101091470A CN201110109147A CN102280478A CN 102280478 A CN102280478 A CN 102280478A CN 2011101091470 A CN2011101091470 A CN 2011101091470A CN 201110109147 A CN201110109147 A CN 201110109147A CN 102280478 A CN102280478 A CN 102280478A
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
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Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US12/772,048 | 2010-04-30 | ||
US12/772,048 US8466060B2 (en) | 2010-04-30 | 2010-04-30 | Stackable power MOSFET, power MOSFET stack, and process of manufacture |
Publications (2)
Publication Number | Publication Date |
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CN102280478A true CN102280478A (zh) | 2011-12-14 |
CN102280478B CN102280478B (zh) | 2014-07-16 |
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CN201110109147.0A Active CN102280478B (zh) | 2010-04-30 | 2011-04-24 | 可堆栈式功率mosfet、功率mosfet堆栈及其制备工艺 |
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US (1) | US8466060B2 (zh) |
CN (1) | CN102280478B (zh) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103325747A (zh) * | 2012-03-19 | 2013-09-25 | 立锜科技股份有限公司 | 垂直式半导体元件及其制造方法 |
CN117810267A (zh) * | 2024-03-01 | 2024-04-02 | 深圳市冠禹半导体有限公司 | 一种栅极嵌埋式mosfet器件及其制造方法 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4833307B2 (ja) * | 2009-02-24 | 2011-12-07 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体モジュール、端子板、端子板の製造方法および半導体モジュールの製造方法 |
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Also Published As
Publication number | Publication date |
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US8466060B2 (en) | 2013-06-18 |
US20110266683A1 (en) | 2011-11-03 |
CN102280478B (zh) | 2014-07-16 |
TW201140800A (en) | 2011-11-16 |
TWI431759B (zh) | 2014-03-21 |
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