CN102064042B - Normally open state field emission type radio frequency micro-mechanical switch - Google Patents
Normally open state field emission type radio frequency micro-mechanical switch Download PDFInfo
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- CN102064042B CN102064042B CN 201010591240 CN201010591240A CN102064042B CN 102064042 B CN102064042 B CN 102064042B CN 201010591240 CN201010591240 CN 201010591240 CN 201010591240 A CN201010591240 A CN 201010591240A CN 102064042 B CN102064042 B CN 102064042B
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- metal micro
- mechanical switch
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Abstract
The invention discloses a normally open state field emission type radio frequency micro-mechanical switch, comprising a low loss substrate, an insulating medium film, a coplanar waveguide signal wire and earth wires, wherein the signal wire is located between two earth wires; the insulating medium film is arranged among a low loss substrate signal wire and the earth wires; a row of metal micro tips are respectively arranged at the left side and the right side in the middle of the signal wire, and a row of metal micro tips are respectively and correspondingly arranged in the middle of the adjacent sides of the two earth wires and the signal wire; gaps are reserved between the metal micro tips on the earth wires and the metal micro tips on the adjacent signal line; and the position of the low loss substrate corresponding to the metal micro tips is recessed to form two hollow cavities so that the metal micro tips are in a suspending state. Because the similar mechanical switches are physically switched off by a coplanar waveguide signal wire structure, the micro-mechanical switch has high isolation degree; because the on-off mode without a movable structure is similar to a semiconductor switch, the micro-mechanical switch has high reliability and quick response speed; and a lower switch threshold voltage can be obtained through utilizing a top-to-tip structure.
Description
Technical field
The present invention relates to a kind of novel normal ON state field emission type rf micromechanical switch.
Background technology
There are the following problems for existing radio-frequency (RF) switch:
(1) some adopt the mechanical movement of structure to reach the purpose of control radiofrequency signal break-make, and these switches cut off radiofrequency signal physically, so isolation is higher.These switches can be divided into again contact and condenser type two large classes, the reliability of touch switch is determined by the contact damage of structure and the fatigue properties of material, the reliability of capacitance-type switch is then determined by the charge injection effect of dielectric layer and the fatigue properties of material, so the reliability of these two kinds of switches is all undesirable.And owing to adopted the mode of mechanical movement, so that the response time of these switches is longer.
(2) some then adopt semiconductor PIN structure to control the break-make of radiofrequency signal, and integrity problem and long defective of response time that these switches have avoided mechanical movement to bring have high reliability and fast-response speed.The defective of this method mainly is: thorough not to the isolation of radiofrequency signal when adopting semiconductor PIN structure, so isolation is not high.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of high-isolation, high reliability, fast-response speed and the low normal ON state field emission type rf micromechanical switch of carrying out voltage.
The present invention includes low loss substrate, the holding wire of dielectric film, co-planar waveguide and ground wire, holding wire is between two ground wires, the dielectric film is located between low loss substrate holding wire and the ground wire, holding wire middle part each side be provided with the little point of row's metal, the middle part of corresponding two adjacent sides with holding wire of ground wire also respectively is provided with the little point of row's metal, between the little point of metal on the little point of the metal on the ground wire and the adjacent signals line interval is arranged; The low loss substrate position indent corresponding with the little point of above-mentioned metal forms two cavitys, makes the little point of metal be vacant state.The equal indentation of the little point of above-mentioned metal, and be the one-to-one relationship of tip to tip between the little point of adjacent metal, can reach like this effect that reduces threshold voltage.
The present invention utilizes the little point of metal that the principle of field emission can occur under certain field intensity, produce electronic beam current between the little point of two row's metals, make the switch that is in ON state originally by electronic beam current radiofrequency signal is shorted to ground wire, namely reached the effect of control radiofrequency signal break-make.
The present invention combines the advantage of mechanical switch and semiconductor switch, namely adopts the signal line structure of the co-planar waveguide that physically cuts off, and without the break-make mode of movable structure, the effect of high reliability and fast-response speed is arranged again when reaching existing high-isolation.
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is the A-A cutaway view of Fig. 1.
Specific embodiments
As depicted in figs. 1 and 2, the present invention includes low loss substrate 1, the holding wire 5 of dielectric film 2, co-planar waveguide and ground wire 3, holding wire is between two ground wires, dielectric film 2 is located between low loss substrate 1 holding wire and the ground wire, holding wire middle part each side to be provided with row's metal little sharp 4, the middle part of corresponding two adjacent sides with holding wire of ground wire also respectively is provided with one, and to arrange metal little sharp 4, between the metal little sharp 4 on the metal on the ground wire little sharp 4 and the adjacent signals line interval arranged; Low loss substrate 1 and above-mentioned metal little sharp 4 corresponding position indents form two cavitys 6, make metal little sharp 4 be vacant state.Above-mentioned metal little sharp 4 equal indentations, and be the one-to-one relationship of tip to tip between the little point of adjacent metal.
Manufacture method of the present invention is:
At first at low loss substrate 1 growth one deck dielectric film 2, carry out for the first time photoetching and etching dielectric film and form the required window of corrosion cavity 6.Carry out the photoetching second time, then splash-proofing sputtering metal and peel off holding wire 5, ground wire 3 and the metal little sharp 4 that forms co-planar waveguide.Low loss substrate is carried out anisotropic etch, obtain cavity 6, so that metal little sharp 4 is unsettled.
Operation principle of the present invention is:
Apply the electric field of some strength to the metal surface after, electric field can accelerate the metal surface electronics.When the energy that obtains by electric field acceleration when the metal surface electronics exceeded the work function of this metal, the electronics of metal surface will be escaped out from metal, and moves along direction of an electric field, formation field emitted electron line.Field emission makes the metal of originally keeping apart by the electronic beam current conducting, much smaller impedance when forming than isolation, and this little impedance can be shorted to the radiofrequency signal of script conducting ground wire, is about to radiofrequency signal and turn-offs.
The course of work of the present invention is as follows:
Radiofrequency signal is connected to the port of co-planar waveguide, adds dc offset voltage at co-planar waveguide holding wire and ground wire two ends simultaneously.When dc offset voltage was zero, switch was in conducting state, the radiofrequency signal conducting; After adding, dc offset voltage surpassed the threshold voltage of field emission, switch was in OFF state, and radiofrequency signal is turn-offed.
Using method of the present invention is: radiofrequency signal is connected to the port of co-planar waveguide, adds dc offset voltage at the two ends of co-planar waveguide holding wire and ground wire simultaneously.Come the break-make of radiofrequency signal on the control switch with the added dc offset voltage of co-planar waveguide holding wire and ground wire two ends.
Claims (2)
1. normal ON state field emission type rf micromechanical switch, it is characterized in that comprising low loss substrate (1), dielectric film (2), the holding wire of co-planar waveguide (5) and ground wire (3), holding wire is between two ground wires, dielectric film (2) is located between low loss substrate (1) holding wire and the ground wire, what it is characterized in that holding wire middle part each side is provided with row's little point of metal (4), accordingly, the middle part of two adjacent sides with holding wire of ground wire also respectively is provided with row's little point of metal (4), between the little point of metal (4) on the little point of the metal on the ground wire (4) and the adjacent signals line interval is arranged; Low loss substrate (1) the position indent corresponding with the little point of above-mentioned metal (4) forms one two cavitys (6), makes the little point of metal (4) be vacant state.
2. normal ON state field emission type rf micromechanical switch as claimed in claim 1 is characterized in that all indentations of the little point of metal (4), and is the one-to-one relationship of tip to tip between the little point of adjacent metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010591240 CN102064042B (en) | 2010-12-16 | 2010-12-16 | Normally open state field emission type radio frequency micro-mechanical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010591240 CN102064042B (en) | 2010-12-16 | 2010-12-16 | Normally open state field emission type radio frequency micro-mechanical switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102064042A CN102064042A (en) | 2011-05-18 |
| CN102064042B true CN102064042B (en) | 2013-04-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201010591240 Expired - Fee Related CN102064042B (en) | 2010-12-16 | 2010-12-16 | Normally open state field emission type radio frequency micro-mechanical switch |
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| CN (1) | CN102064042B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201298B (en) * | 2011-05-27 | 2013-07-31 | 东南大学 | Radio-frequency micromechanical switch with longitudinally- push-pull comb units |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201994240U (en) * | 2010-12-16 | 2011-09-28 | 东南大学 | Normally open field emission-type radio-frequency micro-mechanical switch |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1804609B2 (en) * | 1968-10-23 | 1971-04-22 | QUICK CLOSING SWITCH | |
| US7336474B2 (en) * | 1999-09-23 | 2008-02-26 | Schlumberger Technology Corporation | Microelectromechanical devices |
| DE10143363A1 (en) * | 2000-09-05 | 2002-05-16 | Schlumberger Technology Corp | Microswitch for use in a bore |
| CN101651065A (en) * | 2009-06-02 | 2010-02-17 | 清华大学 | Bistable state bridge-type micro-electromechanical switch structure with floating gate electrode |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201994240U (en) * | 2010-12-16 | 2011-09-28 | 东南大学 | Normally open field emission-type radio-frequency micro-mechanical switch |
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| CN102064042A (en) | 2011-05-18 |
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