CN202085146U - Capacitive type parallel switch with low driving voltage of radio frequency micro-machine system - Google Patents
Capacitive type parallel switch with low driving voltage of radio frequency micro-machine system Download PDFInfo
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- CN202085146U CN202085146U CN2011201013072U CN201120101307U CN202085146U CN 202085146 U CN202085146 U CN 202085146U CN 2011201013072 U CN2011201013072 U CN 2011201013072U CN 201120101307 U CN201120101307 U CN 201120101307U CN 202085146 U CN202085146 U CN 202085146U
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- transmission line
- cantilever beam
- coplanar waveguide
- driving voltage
- cantilever
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Abstract
The utility model relates to a capacitive type parallel switch with low driving voltage of a radio frequency micro-machine system. The parallel switch adopts a cantilever beam structure; a coplanar waveguide transmission line (2) is arranged on the upper surface of a medium base board (1), a medium layer (3) is arranged on the middle coplanar waveguide transmission line (2), one end of a cantilever beam (4) is connected with a ground line (21) of the coplanar waveguide transmission line at one side, the cantilever end of the cantilever beam (4) is stuck on the ground line (21) of the transmission line by conductive adhesive, and the cantilever end of the beam is stuck to the transmission line, thereby reducing the interval between the cantilever beam and a signal line and reducing the driving voltage of the switch; and the structure of the parallel switch can reduce the influence of temperature effect in the technology on the residual stress of the beam, thereby improving the reliability of the switch.
Description
Technical field
The utility model relates to RF MEMS (radio frequency micro-mechanic system) technical field, particularly a kind of RF MEMS condenser type paralleling switch of low driving voltage.
Background technology
MEMS has brought revolutionary variation for the microwave wireless communications field as a kind of emerging technology.RF MEMS is the miniaturization mechanical devices that utilizes photoetching technique to make, and is used for the signal processing of radio frequency and microwave frequency circuit.The RF mems switch utilizes mechanical motion to control the break-make of radio signal transmission, is early to enter one of device of application in the RF MEMS device.Electric-controlled switch (PIN diode or GaAs FET) used in mems switch and the present radio system is different, it does not have semiconductor pn knot or metal pn knot, rely on machinery to move and realize the break-make of radio frequency signal transmission line is controlled, can keep very high insulation index at high band, the insertion loss is low, and isolation is good.
The RF mems switch is by mechanical part (execution) and electricity part, and available static, magnetostatic, piezoelectricity or pyrogen reason provide actuating force for mechanical movement.The electricity part of switch can be arranged with the serial or parallel connection mode, can be metal-metal contact or condenser type contact.Because carrying out switch, static has many advantages: zero dc power, little electrode size, thin thin layer, Duan switching time relatively, the contact force of 50～200 μ N, and available high resistant offset line applies bias voltage etc. to switch, is the technology of the most generally using at present so static is carried out.But the subject matter that restricts its development is the driving voltage height, and membrane stress distortion and life-span lack and can not reach the requirement of industrial quarters.
Summary of the invention
Technical problem: the purpose of this utility model is to provide a kind of RF MEMS condenser type paralleling switch with low driving voltage, to solve the prior art defective, reduces driving voltage, reduces the influence of film residual stress to the switch reliability, to prolong switch life.
Technical scheme: the radio frequency micro-mechanic system capacitive paralleling switch with low driving voltage of the present utility model, adopt cantilever beam structure, on medium substrate, be provided with three coplanar waveguide transmission lines side by side, second coplanar waveguide transmission line in the middle of being positioned at is provided with dielectric layer, one end of cantilever beam is connected with first coplanar waveguide transmission line of a top side that is positioned at medium substrate, the other end of cantilever beam is suspended on the top of the 3rd coplanar waveguide transmission line of the top opposite side of medium substrate, by the thickness of control cantilever beam, adhere on second coplanar waveguide transmission line after making the cantilever end of cantilever beam discharge.
The ground wire top that bonding position only is positioned at the cantilever beam cantilever end takes place in cantilever beam.
Described co-planar waveguide ground level, coplanar waveguide transmission line and MEMS capacitance-type switch are polycrystalline silicon material or metal material.
The cantilever end of the cantilever beam of described MEMS condenser type paralleling switch is bonded on the ground wire of co-planar waveguide, and the holding wire of the remainder of beam and medium substrate or co-planar waveguide leaves certain distance, thereby has reduced the spacing between holding wire and the cantilever beam.
Described transmission line adopts the thick film electroplating technology to be formed on the medium substrate, and transmission line adopts the coplanar waveguide transmission line form to guarantee that signal is not disturbed.
Described dielectric layer forms on transmission line by the deposit photoetching process with silicon nitride.
Described cantilever beam adopts gold copper-base alloy to form cantilever end by deposit, alloy and sacrifice layer process and sticks to structure on the co-planar waveguide ground wire.
Beneficial effect the utlity model has following beneficial effect from technique scheme:
Utilize the utility model, owing on the ground wire with the bonding transmission line thereunder of cantilever beam, reduced the spacing between cantilever beam and the holding wire, thereby can obtain lower driving voltage.
Utilize the utility model, the cantilever end of cantilever beam is bonded on the ground wire of co-planar waveguide, has reduced variations in temperature in the technology to the influence that the longitudinal stress of beam causes, and has improved the reliability of switch.
Utilize the utility model, compare with existing static driven RF mems switch, driving voltage reduces greatly, and switch life is greatly improved, and makes RF MEMS commercialization become possibility.
Description of drawings
Fig. 1 is the end view of RF MEMS condenser type paralleling switch.
Fig. 2 is the vertical view of RF MEMS condenser type paralleling switch.
Wherein have: medium substrate 1, first coplanar waveguide transmission line 21, second coplanar waveguide transmission line 22, the 3rd coplanar waveguide transmission line 23, dielectric layer 3, cantilever beam 4.
Embodiment
The structure chart of the condenser type tandem tap of low driving voltage provided herein as depicted in figs. 1 and 2.
Adopt cantilever beam structure, it on medium substrate 1 coplanar waveguide transmission line, be dielectric layer 3 on second coplanar waveguide transmission line 22 in the middle of being positioned at, after cantilever beam 4 discharges, the one end is connected with first coplanar waveguide transmission line 21 that is positioned at a side, and the other end of cantilever beam 4 is bonded on the ground wire of the 3rd coplanar waveguide transmission line 23.
The ground wire top that bonding position only is positioned at cantilever beam 4 cantilever ends takes place in cantilever beam.
The first step selects High Resistivity Si as substrate, on silicon substrate electrogilding as Seed Layer, Seed Layer is graphical, utilize polyimides as the electroplating mold electrogilding then, thereby finish the making of coplanar waveguide transmission line;
Second step, utilize PECVD deposit one deck silicon nitride, carve dielectric layer 3.
The 3rd step, the spin coating photoresist, or polyimides is as sacrifice layer, and the deposit gold film utilizes reactive ion etching to discharge construction of switch.
The 4th step, with the cantilever end of cantilever beam with on the conductive adhesive ground wire thereunder.
The switch that experiment showed, such design and making can reduce the spacing between cantilever beam and the holding wire effectively, thereby reduces driving voltage; Can also reduce the influence of temperature effect, thereby improve the reliability of switch the longitudinal stress of beam.
Claims (2)
1. radio frequency micro-mechanic system capacitive paralleling switch with low driving voltage, it is characterized in that adopting cantilever beam structure, on medium substrate (1), be provided with three coplanar waveguide transmission lines side by side, second coplanar waveguide transmission line (22) in the middle of being positioned at is provided with dielectric layer (3), one end of cantilever beam (4) is connected with first coplanar waveguide transmission line (21) of a top side that is positioned at medium substrate (1), the other end of cantilever beam (4) is suspended on the top of the 3rd coplanar waveguide transmission line (23) of the top opposite side of medium substrate (1), by the thickness of control cantilever beam (4), adhere on second coplanar waveguide transmission line (22) after making the cantilever end of cantilever beam (4) discharge.
2. the radio frequency micro-mechanic system capacitive paralleling switch with low driving voltage according to claim 1 is characterized in that the ground wire top that bonding position only is positioned at cantilever beam (4) cantilever end takes place cantilever beam.
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201013072U CN202085146U (en) | 2011-04-08 | 2011-04-08 | Capacitive type parallel switch with low driving voltage of radio frequency micro-machine system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201013072U CN202085146U (en) | 2011-04-08 | 2011-04-08 | Capacitive type parallel switch with low driving voltage of radio frequency micro-machine system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202085146U true CN202085146U (en) | 2011-12-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201013072U Expired - Lifetime CN202085146U (en) | 2011-04-08 | 2011-04-08 | Capacitive type parallel switch with low driving voltage of radio frequency micro-machine system |
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| CN (1) | CN202085146U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102243941A (en) * | 2011-04-08 | 2011-11-16 | 东南大学 | Capacitive parallel switch of radio frequency micro mechanical system with low driving voltage |
| CN104992879A (en) * | 2015-07-29 | 2015-10-21 | 东南大学 | External-force-driven MEMS switch based on bulk silicon materials and manufacturing method thereof |
-
2011
- 2011-04-08 CN CN2011201013072U patent/CN202085146U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102243941A (en) * | 2011-04-08 | 2011-11-16 | 东南大学 | Capacitive parallel switch of radio frequency micro mechanical system with low driving voltage |
| CN102243941B (en) * | 2011-04-08 | 2013-07-31 | 东南大学 | Capacitive parallel switch of radio frequency micro mechanical system with low driving voltage |
| CN104992879A (en) * | 2015-07-29 | 2015-10-21 | 东南大学 | External-force-driven MEMS switch based on bulk silicon materials and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20111221 Effective date of abandoning: 20130731 |
|
| RGAV | Abandon patent right to avoid regrant |