CN207993780U - High-power RF mems switch device based on contact point distribution - Google Patents
High-power RF mems switch device based on contact point distribution Download PDFInfo
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- CN207993780U CN207993780U CN201820428530.XU CN201820428530U CN207993780U CN 207993780 U CN207993780 U CN 207993780U CN 201820428530 U CN201820428530 U CN 201820428530U CN 207993780 U CN207993780 U CN 207993780U
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Abstract
The utility model is related to a kind of high-power RF mems switch devices based on contact point distribution, include substrate, wherein：Microwave transmission signal wire is equipped on substrate, ground wire is distributed in microwave transmission signal wire both sides, one end of microwave transmission signal wire is connected with cantilever beam, the front side of cantilever beam, left side, right side and it is provided with contact distributed areas below, several contact points are provided in the distributed areas of contact, contact point distributed areas are interconnected with microwave transmission signal wire, and driving electrodes are provided with below cantilever beam.The phenomenon that signal power caused by Kelvin effect concentrates on certain several contact is avoided as a result, and then is reduced due to the possibility that some contacts fail and global switch is caused to fail, and the reliability of device is improved.The power that each contact point is born is more average, increases the power capacity of device.The raising that device power capacity is realized in the case where not increasing device size possesses preferable compatible result.
Description
Technical field
The utility model is related to a kind of mems switch device more particularly to a kind of high-power RFs based on contact point distribution
Mems switch device.
Background technology
RF MEMS (microelectromechanical systems) refers to application of the MEMS technology in RF application, that is, utilizes MEMS to manufacture
Technology makes the device suitable for RF application.In the RF MEMS device of all multiple types, switch is important composition therein
Part.Due to its superior radio-frequency performance (Insertion Loss is low, isolation is high, the linearity is good etc.), RF MEMS Switches are in communication, test
The fields such as instrument, radar have a wide range of applications.But the lower power capacity of conventional radio frequency mems switch and poor reliable
Property be one of the main bottleneck for limiting its application.
Traditional series contact type RF MEMS Switches are usually believed by metal cantilever beams, driving electrodes, contact point and microwave
Number four part of line composition.When driving electrodes do not apply drive signal, cantilever beam is disconnected with microwave transmission signal wire, and signal cannot
Conducting, switch are in OFF state；When applying drive signal in driving electrodes, cantilever beam contacts to be formed with microwave transmission signal wire
Access, signal conduction, switch are in ON states.It, when driving electrodes do not apply drive signal, can also be opened by the way of opposite
It closes and is in ON states；When applying drive signal in driving electrodes, switch is in OFF state.
For RF MEMS Switches, power capacity is that switch is instigated to complete certain cycle-index without the defeated of failure
Enter power limit, and reliability refers to then switching the cycle-index that can be worked normally under certain power condition.Therefore, power holds
Amount has very close relationship with reliability, and often they put together discussion.For contact RF MEMS Switches, passing through
When relatively high power signal, dominant failure mechanism is situations such as micro- melting welding of contact point, contact point are burnt, this is to restrict its power to hold
The principal element of amount and reliability.The simplest method for solving the problems, such as this is exactly to increase contact point quantity, but due to micro-
Wave frequency section, with the increase of frequency, the Kelvin effect (or edge effect) of electric current can be more and more obvious so that signal energy collection
In periphery contact point on, the power capacity of device can not be increased well.Therefore, the utility model proposes utilize contact
Point distribution design optimizes device.
In view of the above shortcomings, the designer, is actively subject to research and innovation, it is a kind of based on contact point distribution to found
High-power RF mems switch device, make it with more the utility value in industry.
Utility model content
In order to solve the above technical problems, the purpose of this utility model is to provide and a kind of high-power is penetrated based on what contact point was distributed
Frequency mems switch device.
The high-power RF mems switch device based on contact point distribution of the utility model, includes substrate, wherein：Institute
It states and is equipped with microwave transmission signal wire on substrate, ground wire, the microwave transmission letter is distributed in microwave transmission signal wire both sides
One end of number line is connected with cantilever beam, the front side of the cantilever beam, left side, right side and is provided with contact distributed areas below,
Several contact points are provided in the contact distributed areas, the contact point distributed areas are interconnected with microwave transmission signal wire, institute
It states and is provided with driving electrodes below cantilever beam.
Further, the above-mentioned high-power RF mems switch device based on contact point distribution, wherein the contact point
It is distributed in the upper surface of microwave transmission signal wire, or, the contact point is distributed in the lower surface of cantilever beam.
Further, the above-mentioned high-power RF mems switch device based on contact point distribution, wherein the cantilever
Beam is single clamped beam structure, and pole plate is distributed in the single clamped beam structure；Or the cantilever beam is two-end fixed beam
Pole plate is distributed in the two-end fixed beam structure in structure；Or the cantilever beam is multiterminal fixed beam structure, the multiterminal
Pole plate is distributed on fixed beam structure.
Further, the above-mentioned high-power RF mems switch device based on contact point distribution, wherein the pole plate
It is bar shaped for the rectangular or described pole plate.
Further, the above-mentioned high-power RF mems switch device based on contact point distribution, wherein the pole plate
On several release apertures are distributed with.
Further, the above-mentioned high-power RF mems switch device based on contact point distribution, wherein the cantilever
It is connected using anchor point structure between beam and microwave transmission signal wire.
Further, the above-mentioned high-power RF mems switch device based on contact point distribution, wherein the microwave
Transmission signal line, ground wire are coplanar waveguide transmission line structure.
Still further, the above-mentioned high-power RF mems switch device based on contact point distribution, wherein the substrate
For glass style, or it is ceramic style, or is High Resistivity Si style.
According to the above aspect of the present invention, the utility model has at least the following advantages：
1, the contact point distributed areas of RF MEMS Switches are designed by contact point distribution optimization, avoid (or reduce) by
The phenomenon that signal power caused by Kelvin effect (or edge effect) concentrates on certain several contact, and then reduce due to portion
The possibility for tapping contact failure and global switch being caused to fail, improves the reliability of device.
2, the power that each contact point is born is more average, increases the power capacity of device.
3, conventional radio frequency mems switch is compared, and can be accomplished that a butt contact distribution has carried out design optimization, be ensured device
Overall dimensions do not change, and the raising of device power capacity is realized in the case where not increasing device size, possess preferably
Compatible result.
The above description is merely an outline of the technical solution of the present invention, in order to better understand the skill of the utility model
Art means, and can be implemented in accordance with the contents of the specification, below on the preferred embodiment of the present invention and the accompanying drawings in detail
It describes in detail bright as after.
Description of the drawings
Fig. 1 is the dimensional structure diagram for the high-power RF mems switch device being distributed based on contact point.
Fig. 2 is the overall structure diagram for the high-power RF mems switch device being distributed based on contact point.
Fig. 3 is the cross-sectional view of the A-A ' along Fig. 2.
Fig. 4 is the cross-sectional view of the B-B ' along Fig. 2.
The meaning of each reference numeral is as follows in figure.
1 contact distributed areas, 2 cantilever beam
3 microwave transmission signal wire, 4 ground wire
5 driving electrodes, 6 substrate
Specific implementation mode
With reference to the accompanying drawings and examples, specific embodiment of the present utility model is described in further detail.Below
Embodiment is not intended to limit the scope of the present invention for illustrating the utility model.
Include substrate 6 such as the high-power RF mems switch device of Fig. 1 to 4 being distributed based on contact point, not with crowd
It is with place：Microwave transmission signal wire 3 is equipped on substrate 6, ground wire 4 is distributed in 3 both sides of microwave transmission signal wire.Together
When, one end of microwave transmission signal wire 3 is connected with cantilever beam 2.Also, it the front side of cantilever beam 2, left side, right side and sets below
It is equipped with contact distributed areas 1.From the point of view of actual use, purpose is existing for contact point distributed areas 1, and signal power is carried out
Distribution, makes the power that each contact point is born reach unanimity as far as possible.For this purpose, the difference of the demand of combined use, is touched
Point distributed areas can protrude from except cantilever beam 2, can also be on cantilever beam 2.The setting in contact distributed areas 1
There are several contact points, purpose is to ensure that cantilever beam 2 realizes good contact with microwave transmission signal wire 3 existing for contact point.It adopts
Contact point distributed areas 1 are interconnected with microwave transmission signal wire 3.Furthermore, it is contemplated that using the needs of driving, under cantilever beam 2
Side is provided with driving electrodes 5.
From the point of view of one preferable embodiment of the utility model, contact point is distributed in the upper table of microwave transmission signal wire 3
Face, alternatively, contact point is distributed in the lower surface of cantilever beam 2.Also, each contact spot size may be the same or different.By
This, meets all kinds of needs using structure.
From the point of view of further, according to the difference of functional requirement, cantilever beam 2 is single clamped beam structure, single clamped beam structure
On pole plate is distributed with.Or cantilever beam 2 is two-end fixed beam structure, and pole plate is distributed in two-end fixed beam structure.For certain
Special applications, cantilever beam 2 can also be multiterminal fixed beam structure, and pole plate is distributed on multiterminal fixed beam structure.Meanwhile pole plate
For rectangular or bar shaped, adapts to actual use and need.Furthermore several release apertures are distributed on pole plate.
Meanwhile it being connected using anchor point structure between cantilever beam 2 and microwave transmission signal wire 3.Also, microwave transmission signal wire
3, ground wire 4 is coplanar waveguide transmission line structure.It is located under cantilever beam 2 to possess preferably driving effect, driving electrodes 5
Fang Xianglian.In actual implementation, a variety of type of drive, such as electrostatic drive, magnetostatic driving, thermoelectricity may be used in driving electrodes 5
Driving, Piezoelectric Driving etc., according to the difference of type of drive, driving electrodes 5 can be positioned over the suitable position of switch.Furthermore root
The factually difference of border use demand, substrate 6 are glass style, can also be ceramic style, can also be High Resistivity Si style.
The operation principle of the utility model is as follows：
When driving electrodes 5 do not apply drive signal, cantilever beam 2 is disconnected with microwave transmission signal wire 3, and signal cannot be led
Logical, switch is in OFF state.
When applying drive signal in driving electrodes 5, cantilever beam 2 is believed since electrostatic force is stayed with microwave transmission
The contact of number line 3 forms access, signal conduction, and switch is in ON states.
It can be seen that using after the utility model by above-mentioned character express and in conjunction with attached drawing, gather around and have the following advantages：
1, the contact point distributed areas of RF MEMS Switches are designed by contact point distribution optimization, avoid (or reduce) by
The phenomenon that signal power caused by Kelvin effect (or edge effect) concentrates on certain several contact, and then reduce due to portion
The possibility for tapping contact failure and global switch being caused to fail, improves the reliability of device.
2, the power that each contact point is born is more average, increases the power capacity of device.
3, conventional radio frequency mems switch is compared, and can be accomplished that a butt contact distribution has carried out design optimization, be ensured device
Overall dimensions do not change, and the raising of device power capacity is realized in the case where not increasing device size, possess preferably
Compatible result.
The characteristics of the utility model and advantage by following description of the drawings and specific implementation mode further specifically
It is bright, or recognized by the practice of the utility model.
The above is only the preferred embodiment of the utility model, is not intended to limit the utility model, it is noted that
For those skilled in the art, without deviating from the technical principle of the utility model, it can also do
Go out several improvements and modifications, these improvements and modifications also should be regarded as the scope of protection of the utility model.
Claims (8)
- Include substrate (6) 1. based on the high-power RF mems switch device of contact point distribution, it is characterised in that：The lining Microwave transmission signal wire (3) is equipped on bottom (6), ground wire (4) is distributed in microwave transmission signal wire (3) both sides, described micro- One end of wave transmission signal line (3) is connected with cantilever beam (2), the front side of the cantilever beam (2), left side, right side and sets below Contact distributed areas (1) are equipped with, several contact points, the contact point distributed areas are provided in the contact distributed areas (1) (1) it is interconnected with microwave transmission signal wire (3), driving electrodes (5) is provided with below the cantilever beam (2).
- 2. the high-power RF mems switch device according to claim 1 based on contact point distribution, it is characterised in that：Institute The upper surface that contact point is distributed in microwave transmission signal wire (3) is stated, or, the contact point is distributed in the following table of cantilever beam (2) Face.
- 3. the high-power RF mems switch device according to claim 1 based on contact point distribution, it is characterised in that：Institute It is single clamped beam structure to state cantilever beam (2), and pole plate is distributed in the single clamped beam structure；Or the cantilever beam (2) For two-end fixed beam structure, pole plate is distributed in the two-end fixed beam structure；Or the cantilever beam (2) is that multiterminal are clamped Pole plate is distributed on the multiterminal fixed beam structure in girder construction.
- 4. the high-power RF mems switch device according to claim 3 based on contact point distribution, it is characterised in that：Institute It is bar shaped that pole plate, which is stated, as the rectangular or described pole plate.
- 5. the high-power RF mems switch device according to claim 3 based on contact point distribution, it is characterised in that：Institute It states and several release apertures is distributed on pole plate.
- 6. the high-power RF mems switch device according to claim 1 based on contact point distribution, it is characterised in that：Institute It states and is connect using anchor point structure between cantilever beam (2) and microwave transmission signal wire (3).
- 7. the high-power RF mems switch device according to claim 1 based on contact point distribution, it is characterised in that：Institute State microwave transmission signal wire (3), ground wire (4) is coplanar waveguide transmission line structure.
- 8. the high-power RF mems switch device according to claim 1 based on contact point distribution, it is characterised in that：Institute It is glass style to state substrate (6), or is ceramic style, or is High Resistivity Si style.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820428530.XU CN207993780U (en) | 2018-03-28 | 2018-03-28 | High-power RF mems switch device based on contact point distribution |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820428530.XU CN207993780U (en) | 2018-03-28 | 2018-03-28 | High-power RF mems switch device based on contact point distribution |
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| CN207993780U true CN207993780U (en) | 2018-10-19 |
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| CN201820428530.XU Active CN207993780U (en) | 2018-03-28 | 2018-03-28 | High-power RF mems switch device based on contact point distribution |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281328A (en) * | 2018-03-28 | 2018-07-13 | 苏州希美微纳***有限公司 | A kind of RF MEMS Switches of high-performance high power capacity |
| CN111180837A (en) * | 2020-01-19 | 2020-05-19 | 中国电子科技集团公司第五十五研究所 | Anti-adhesion radio frequency mechanical switch and preparation method thereof |
-
2018
- 2018-03-28 CN CN201820428530.XU patent/CN207993780U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281328A (en) * | 2018-03-28 | 2018-07-13 | 苏州希美微纳***有限公司 | A kind of RF MEMS Switches of high-performance high power capacity |
| CN111180837A (en) * | 2020-01-19 | 2020-05-19 | 中国电子科技集团公司第五十五研究所 | Anti-adhesion radio frequency mechanical switch and preparation method thereof |
| CN111180837B (en) * | 2020-01-19 | 2021-10-15 | 中国电子科技集团公司第五十五研究所 | Anti-adhesion radio frequency mechanical switch and preparation method thereof |
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