CN210723300U - K-type single-pole four-throw radio frequency MEMS switch - Google Patents
K-type single-pole four-throw radio frequency MEMS switch Download PDFInfo
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- CN210723300U CN210723300U CN201920659189.3U CN201920659189U CN210723300U CN 210723300 U CN210723300 U CN 210723300U CN 201920659189 U CN201920659189 U CN 201920659189U CN 210723300 U CN210723300 U CN 210723300U
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Abstract
The utility model belongs to radio frequency MEMS field, concretely relates to K type single-pole four throw radio frequency switch. A K-type single-pole four-throw switch mainly comprises a substrate, a microwave transmission line, a driving electrode, an upper electrode, a lower electrode, a fixed anchor point and a contact, wherein the microwave transmission line and the driving electrode are arranged on the substrate, the upper electrode is of a straight-plate structure, and the lower electrode adopts a double contact with an elastic beam. The microwave transmission line adopts a K-shaped structure power divider to divide input signal power into four equal signals for output. From the perspective of microwave transmission, the K-shaped structure is more efficient, smooth flow of current is improved, and transmission performance among all branches of the switch is improved. The single-pole four-throw switch designed by the method has small insertion loss and better performances such as isolation and the like. In addition, the release hole formed in the cantilever beam effectively reduces stress on the whole cantilever beam, and isolation of the switch is greatly improved.
Description
Technical Field
The utility model belongs to radio frequency MEMS field, concretely relates to K type single-pole four throw radio frequency MEMS switch.
Background
The radio frequency MEMS switch is a micro electronic component, is a key component in a high-frequency communication system, and controls the on-off of signals through external driving. Compared with the traditional semiconductor switch, the semiconductor switch has the advantages of high frequency, low loss, small volume, long service life, easy integration and the like. The method can be widely applied to various radio frequency, microwave and millimeter wave communication systems, and has important significance for high-speed wireless communication systems.
The rf MEMS switches can be classified into single-pole single (multiple) throw switches and single-pole single (multiple) throw switches according to their signal processing methods. The single-pole single-throw (multi-throw) switch outputs from one or more paths by controlling one path of signal, and the single-pole single-throw (multi-pole single-throw) switch outputs from one path by controlling one or more paths of signal. Among them, the single-pole single (multi) -throw switch has recently been drawing attention from various research institutes as a key unit of electronic components such as a multibit phase shifter and an antenna. At present, the institutions that carry out research on single-pole four-throw switches mainly include electronic technology university, Nanjing university of science and technology, Zhongfeng 13 institute, Nanjing institute of electronic technology, 723 th institute of the Chinese ship re-engineering group, and the like. For example, the Nanjing electronics technology research institute designs an RF MEMS single-pole four-throw rectangular switch, which consists of a five-port microstrip line and four resistance-contact type and series-connection type cantilever beam switches and has the problems of complex structure, poor insertion loss, high driving voltage and the like.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the defects of the traditional single-pole single-throw switch and designing a K-type single-pole four-throw switch which is suitable for 0-20 GHz. The switch can realize the four-way switching function of the switch as well as the reduction of the switch volume and the insertion loss.
The utility model discloses a concrete technical scheme as follows: a K-type single pole four throw radio frequency switch, comprising:
at least one substrate providing a supporting base;
at least one group of microwave transmission components arranged on the surface of the substrate;
the microwave transmission assembly comprises a signal line unit for transmitting signals, a ground wire unit arranged on the peripheral side of the signal line unit and a driving electrode arranged below the signal line unit;
the signal line unit comprises an input signal line, an output signal line and a K-type signal line, the K-type signal line is a disc body, at least five strip-shaped ports extend out of the outer peripheral side of the disc body at equal angles, and each strip-shaped port comprises a signal line input port for connecting the input signal line, near-end ports adjacent to two sides of the signal input port and a far-end port opposite to the signal input port;
the input port of the signal line, the near port and the far port are arranged on the outer periphery of the disc body at equal angles to form a radial K-shaped structure, the input port of the signal line is arranged opposite to the input signal line, and the near port and the far port are respectively arranged opposite to the output signal line.
Furthermore, the output signal line is defined as a near-end port output signal line and a far-end port output signal line corresponding to the K-type signal line;
the near-end port output signal line and the far-end port output signal line are respectively provided with a cantilever beam for triggering opening and closing corresponding to the near-end port and the far-end port;
one end of the cantilever beam is fixedly arranged on the near-end port output signal line and the far-end port output signal line through anchor points, and the other end of the cantilever beam is suspended and extends to the upper part of the end part of the K-type signal line.
Furthermore, the K-shaped signal line is a disc body, five strip-shaped ports extend out of the outer peripheral side of the disc body, two near-end ports and the input signal line form 90-degree included angles, and a far-end port and the two near-end ports form a 45-degree angle.
Furthermore, the signal line input port, the near-end port and the far-end port extend outwards to form at least two contacts along the radial direction of the K-type signal line, and the two contacts are arranged in parallel and are always located below the cantilever beam.
Further, a release hole array is arranged on the cantilever beam.
Furthermore, a driving electrode is fixedly arranged at the suspended position of the substrate corresponding to the cantilever beam.
Furthermore, a silicon nitride dielectric layer is arranged on one surface, facing the cantilever beam, of the driving electrode.
Further, the ground wire unit includes: a first ground wire, a second ground wire, a third ground wire;
the two first ground wires are respectively arranged at the included angle between the input signal wire and the two output wires of the near-end ports;
the two second ground lines are respectively arranged at the included angle between one near-end port output line and one far-end port output line;
the third signal line is positioned at the corner between the two output lines of the remote ports.
Further, two air bridges are erected on the first ground wire.
Further, the release hole array comprises a plurality of release holes arranged in an array shape, and the release hole array is composed of release holes with the row number of 3-5 and the column number of 6-10;
the diameter of the release holes is 8-10 μm, and the distance between any two adjacent release holes is 15-25 μm.
The beneficial effects of the utility model reside in that, use K type single-pole four-throw radio frequency switch mainly comprises K type structure merit divider and single-pole single-throw switch combination, has simple structure, and is small, advantages such as insertion loss is little. From the perspective of microwave transmission, the K-shaped structure is more efficient, smooth flow of current is improved, and transmission performance among all branches of the switch is improved. Release holes formed in four cantilever beams of the K-type single-pole four-throw switch reduce insertion loss, increase isolation and prolong the service life of the switch. The high-frequency-range radio frequency MEMS switch has strong practicability in the working frequency range, and can realize high integration of the radio frequency MEMS switch and four-channel gating of DC-20 GHz.
Compared with the traditional single-pole four-throw switch, the K-type single-pole four-throw switch has a symmetrical structure consisting of four cantilever beams, so that the insertion loss is reduced, the isolation is increased, the service life of the switch is prolonged, and the microwave performance of the switch is enhanced. Has excellent practicability at 0-20 GHz. The DC-20GHz four-channel gating can be realized, and the high integration of the radio frequency MEMS switch is realized.
Drawings
Fig. 1 is an overall structure diagram of a K-type single-pole four-throw switch according to an embodiment of the present invention;
fig. 2 is a top view of the whole structure of the K-type single-pole four-throw switch according to the embodiment of the present invention;
fig. 3 is a structural diagram of a K-type signal line according to an embodiment of the present invention;
fig. 4 is a structural diagram of an on-state of the switch assembly according to the embodiment of the present invention;
fig. 5 is a structural diagram of an off state of the switch assembly according to the embodiment of the present invention;
fig. 6 is a structural diagram of the cantilever beam according to the embodiment of the present invention;
fig. 7 is a graph showing the insertion loss at the near-end port of the switch of the present invention;
FIG. 8 is a graph showing the isolation between the near-end ports of the switch of the present invention;
fig. 9 is a simulation diagram of the insertion loss of the switch distal port of the present invention;
fig. 10 is a diagram of a switch distal port isolation simulation of the present invention;
description of the drawings: 1-substrate, 2-input signal line, 3-near port output signal line, 4-far port output signal line, 5-first ground wire, 6-second ground wire, 7-third ground wire, 8-K type signal line, 9-near port, 10-far port, 11-contact, 12-cantilever beam, 13-driving electrode, 14-dielectric layer, 15-release hole, 16-anchor point, 17-air bridge, 18-lead wire and 19-air bridge pivot.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the combination or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. In addition, in the description process of the embodiment of the present invention, the position relationships of the devices such as "up", "down", "front", "back", "left", "right" in all the drawings all use fig. 1 as a standard.
The present invention will be further explained with reference to the accompanying drawings:
as shown in fig. 1-6, the present embodiment provides a K-type single-pole four-throw switch, which includes a substrate 1 for providing a supporting base, and a microwave transmission component disposed on the substrate 1.
As shown in fig. 1 and 2, the substrate 1 is a cubic structure with low electrical conductivity, and the material of the substrate 1 is glass, ceramic and high-resistance silicon, such electrical conductivity is low, which ensures low loss characteristic when transmitting radio frequency signals.
The microwave transmission assembly comprises signal line units which are symmetrically arranged, ground wire units which are arranged on the peripheral sides of the signal line units, and driving electrodes 13 which are arranged below the signal line units.
The drive electrode 13 is connected to a lead wire 18. When a driving voltage is applied to the driving electrode 13 through the lead 18, an electrostatic force is generated between the cantilever beam 12 and the driving electrode 13, so that the cantilever beam 12 bends towards the contact 11 and contacts with the contact 11, and the radio frequency MEMS switch is in an open state; when the driving voltage is not applied to the driving electrode 13, the upper electrode 11 and the contact are disconnected from each other, and at this time, the radio frequency MEMS switch is in a closed state.
The signal line unit includes: an input signal line 2, a near-end port output signal line 3, a far-end port output signal line 4 and a K-type signal line 8.
The input signal line 2, the near-end port output signal line 3 and the far-end port output signal line 4 are respectively arranged on the periphery of the upper surface of the substrate 1, and one ends of the input signal line 2, the near-end port output signal line 3 and the far-end port output signal line 4 facing the center direction of the substrate 1 are respectively connected with the K-type signal line 8;
as shown in fig. 3, the K-type signal line 8 is a disk body, five strip-shaped ports extend from the outer peripheral side of the flat disk body, two near-end ports 9 form 90 ° included angles with the input signal line 2, and a far-end port 10 forms 45 ° included angles with the two near-end ports 9, one of the strip-shaped ports for connecting with the input signal line 2 is defined as a signal line input port, the strip-shaped ports adjacent to both sides of the signal line input port are defined as near-end ports 9, and the strip-shaped port opposite to the signal line input port and adjacent to the near-end port 9 is defined as a far-end port 10. The near-end port 9 and the far-end port 10 extend outwards to form at least two contacts 11 along the radial direction of the K-type signal line 8, and the two contacts 11 are arranged in parallel;
as shown in fig. 6, a cantilever beam 12 is respectively disposed on one side of the near-end port output signal line 3 and one side of the far-end port output signal line 4 close to the K-type signal line 8, one end of the cantilever beam 12 is fixed on the near-end port output signal line 3 and the far-end port output signal line 4 by an anchor point 16, and the other end of the cantilever beam 13 is suspended and extends above the end of the K-type signal line 8. An array of release holes 15 is provided on the cantilever beam 12.
The array of the release holes 15 comprises a plurality of release holes 15 arranged in an array shape, and the array of the release holes comprises 3-5 rows and 6-10 columns; the diameter of the release holes is 8-10 μm, and the distance between any two adjacent release holes is 15-25 μm.
The signal input line 2 is directly connected with a signal input port for inputting an external signal, the near-end port output signal line 3 is arranged corresponding to the near-end port 9, an anchor point 16 is arranged at one end close to the near-end port 9, a cantilever beam 12 is fixedly arranged above the anchor point 16, and one end of the cantilever beam 12 opposite to the anchor point 16 is positioned right above the contact 11 of the near-end port 9;
the remote port output signal line 4 is arranged corresponding to the remote port 10, an anchor point 16 is arranged at one end close to the remote port 10, a cantilever beam 12 is fixedly arranged above the anchor point 16, and one end of the cantilever beam 12 opposite to the anchor point 16 is positioned right above the contact 11 of the remote port 10;
and fixedly arranging a driving electrode 13 at a position right below the cantilever beam 12 on the upper surface of the substrate 1, wherein a dielectric layer 14 is arranged on one surface of the driving electrode 13 facing the cantilever beam 12. When no driving voltage is applied to the driving electrode 13, the driving electrode 13 does not act, the cantilever beam 12 is separated from the contact 11, and the switch is in an off state. When a driving voltage is applied to the driving electrode 13, the driving electrode 13 generates an electrostatic force to deform the cantilever beam 12 so as to contact the electrode contact 11, and the switch is in an on state.
The dielectric layer 14 comprises silicon nitride and hafnium oxide, and the relative dielectric constant of the materials is high, so that the isolation between the cantilever beam 12 and the driving electrode 13 is ensured.
The ground wire unit includes: first ground wire 5, second ground wire 6, and third ground wire 7.
The two first ground wires 5 are respectively arranged at the included angle between the input signal wire 2 and the two near-end port output wires 3;
the two second ground lines are respectively arranged at the included angle between one near-end port output line 3 and one far-end port output line 4;
the third signal line is located at the corner between the two remote port output lines 4.
Each of the first ground wire 5 and the second ground wire 6 has an air bridge 17, and the air bridge 17 is erected above the lead wire 18 through an air bridge fulcrum 19.
Fig. 7 shows the insertion loss of the near port of the designed switch. It can be seen that the insertion loss of the near port is about 0.28dB for the K-type single pole, four throw switch over the frequency range of 0-20 Ghz.
Fig. 8 shows the isolation of the near-end port of the designed switch. It can be seen that the isolation of the near port is about 24.59dB for the K-type single pole, four throw switch over the frequency range of 0-20 Ghz.
The insertion loss of the designed switch remote port is shown in fig. 9. It can be seen that the insertion loss of the K-type single pole four throw switch at the far end port is about 0.48dB in the frequency range of 0-20 Ghz.
The isolation of the designed switch's remote ports is shown in fig. 10. It can be seen that the isolation of the K-type single pole four throw switch at the far end is about 21.62dB in the frequency range of 0-20 Ghz.
Use K type single-pole four throw radio frequency switch mainly comprises K type structure merit divider and single-pole single throw switch combination, has simple structure, and is small, insertion loss advantage such as little. From the perspective of microwave transmission, the isolation between each branch of the K-shaped structure power divider is better, and the balance degree is high. The single-pole four-throw switch designed by the method has small insertion loss and better amplitude and phase consistency of all paths. The K-type single-pole four-throw switch is provided with four symmetrical cantilever beams, so that the insertion loss is reduced, the isolation degree is increased, and the service life of the switch is prolonged. The high-frequency-range radio frequency MEMS switch has strong practicability in the working frequency range, and can realize high integration of the radio frequency MEMS switch and four-channel gating of DC-20 GHz.
Compared with the traditional single-pole four-throw switch, the K-type single-pole four-throw switch has a symmetrical structure consisting of four cantilever beams, so that the insertion loss is reduced, the isolation is increased, the service life of the switch is prolonged, and the microwave performance of the switch is enhanced. Has excellent practicability at 0-20 GHz. The DC-20GHz four-channel gating can be realized, and the high integration of the radio frequency MEMS switch is realized.
Claims (9)
1. A K-type single-pole four-throw radio frequency switch, comprising:
at least one substrate providing a supporting base;
at least one group of microwave transmission components arranged on the surface of the substrate;
the microwave transmission assembly comprises a signal line unit for transmitting signals, a ground wire unit arranged on the peripheral side of the signal line unit and a driving electrode arranged below the signal line unit;
the signal line unit comprises an input signal line, an output signal line and a K-type signal line, the K-type signal line is a disc body, at least five strip-shaped ports extend out of the outer peripheral side of the disc body at equal angles, and each strip-shaped port comprises a signal line input port for connecting the input signal line, near-end ports adjacent to two sides of the signal input port and a far-end port opposite to the signal input port;
the input port of the signal line, the near port and the far port are arranged on the outer periphery of the disc body at equal angles to form a radial K-shaped structure, the input port of the signal line is arranged opposite to the input signal line, and the near port and the far port are respectively arranged opposite to the output signal line.
2. The K-type single-pole-four-throw radio frequency switch of claim 1, wherein the output signal line corresponding to the K-type signal line is defined as a near port output signal line and a far port output signal line;
the near-end port output signal line and the far-end port output signal line are respectively provided with a cantilever beam for triggering opening and closing corresponding to the near-end port and the far-end port;
one end of the cantilever beam is fixedly arranged on the near-end port output signal line and the far-end port output signal line through anchor points, and the other end of the cantilever beam is suspended and extends to the upper part of the end part of the K-type signal line.
3. The K-type single-pole four-throw radio frequency switch of claim 1, wherein the K-type signal line is a circular disk, five strip-shaped ports extend from the outer periphery of the circular disk, two near ports form an angle of 90 ° with the input signal line, and the far port forms an angle of 45 ° with the two near ports.
4. The K-type single-pole-four-throw radio frequency switch of claim 3, wherein the signal line input port, the near port and the far port extend outward at least two contacts in a radial direction of the K-type signal line, and the two contacts are arranged in parallel and always located below the cantilever beam.
5. The K-type single-pole-four-throw radio frequency switch of claim 2, wherein the cantilever beam is provided with an array of release holes.
6. The K-type single-pole-four-throw radio frequency switch of claim 2, wherein the substrate is fixedly provided with a driving electrode corresponding to a suspended position of the cantilever beam.
7. The K-type single-pole-four-throw radio frequency switch of claim 6, wherein a silicon nitride dielectric layer is disposed on a side of the driving electrode facing the cantilever.
8. The K-type single-pole-four-throw radio frequency switch of claim 2, wherein the ground unit comprises a first ground, a second ground, and a third ground;
the two first ground wires are respectively arranged at the included angle between the input signal wire and the two output wires of the near-end ports;
the two second ground lines are respectively arranged at the included angle between one near-end port output line and one far-end port output line;
the third signal line is positioned at the corner between the two output lines of the remote ports.
9. The K-type single-pole four-throw radio frequency switch according to claim 5, wherein the release hole array comprises a plurality of release holes arranged in an array, and the release hole array is composed of release holes with the row number of 3-5 and the column number of 6-10;
the diameter of the release holes is 8-10 μm, and the distance between any two adjacent release holes is 15-25 μm.
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Cited By (1)
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CN110137634A (en) * | 2019-05-09 | 2019-08-16 | 中北大学 | A kind of K-type hilted broadsword four-throw RF MEMS Switches |
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Cited By (1)
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CN110137634A (en) * | 2019-05-09 | 2019-08-16 | 中北大学 | A kind of K-type hilted broadsword four-throw RF MEMS Switches |
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