CN107437484A - A kind of RF MEMS Switches with spring beam contact - Google Patents
A kind of RF MEMS Switches with spring beam contact Download PDFInfo
- Publication number
- CN107437484A CN107437484A CN201710607497.7A CN201710607497A CN107437484A CN 107437484 A CN107437484 A CN 107437484A CN 201710607497 A CN201710607497 A CN 201710607497A CN 107437484 A CN107437484 A CN 107437484A
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- CN
- China
- Prior art keywords
- spring beam
- contact
- top electrode
- mems switches
- driving electrodes
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
Abstract
A kind of RF MEMS Switches with spring beam contact,Primary structure is by substrate,Microwave transmission line,Driving electrodes,Bottom electrode,Fixed anchor point,Top electrode,Release aperture,Air bridges,Lead forms,Microwave transmission line,Driving electrodes and lead are arranged on substrate,Driving electrodes are located at the lower section of Top electrode,Top electrode is board-type structure,Top electrode is fixed on microwave transmission line by fixed anchor point,Bottom electrode uses the double contact structure with double spring beams,Spring beam is fixed on microwave transmission line by fixed anchor point,Contact is respectively equipped with double spring beams,Said from mechanical property,Can reduce Top electrode under electrostatic interaction quick pull-down to impact caused by bottom electrode,Play cushioning effect,So as to protect contact and Top electrode,Said from electric property,Effective contact can be strengthened,Avoid the weak switch ablation and adhesion for contacting and bringing,The present invention effectively improves integrity problem caused by traditional double-contact virtual connection,The life-span of switch is set to be greatly improved.
Description
Technical field
The invention belongs to RF MEMS technical field, and in particular to a kind of RF MEMS Switches with spring beam contact.
Background technology
RF MEMS Switches are one of basic modules of radio system, pass through metal-metal as a kind of passive device
The contact electric capacity that either metal-insulator dielectric-metal is formed transmits or isolates microwave signal, has that insertion loss is low,
The good microwave property such as isolation height, it can be widely used in various radio frequencies, microwave and millimeter wave communication system, to thunder
It is significant up to military fields such as early warning, tactics and strategy scouting, Satellite Networking and guidances.
The main institutes of You Zhong electricity groups 13 of research institution of current domestic RF MEMS Switches, institute of Zhong electricity groups 55,
The units such as Tsing-Hua University, Southeast China University.Such as Tsing-Hua University discloses a kind of micro electro-mechanical system switch, Top electrode uses multichannel
Stripe shape electrode plate structure, bottom electrode are multiconductor structure, limited due to making multifinger craft precision, it is impossible to ensure multifinger
Flatness is completely the same, so as to cause multiple contacts to be also turned on, reduces the life-span of switch.Similar, middle electric 50
A kind of RF MEMS Switches (patent No. CN102097222A) containing the tooth-like contact system of shark disclosed in five, its shark is tooth-like to be touched
Dot system includes two groups of contacts of height, and every group of contact includes two highly consistent contacts, but is highly extremely difficult to when making
It is completely the same so as to have a virtual connection in same group of two contacts, reduce the life-span of switch.
A kind of RF MEMS Switches with spring beam contact, can effectively improve can caused by traditional double-contact virtual connection
By sex chromosome mosaicism, switch contact characteristic is enhanced, reduces weak contact, avoids switching ablation and adhesion, obtains the life-span of switch
Larger raising.
The content of the invention
The purpose of the present invention is the deficiency for background technology, designs a kind of RF MEMS with spring beam contact and opens
Close, enhance switch contact characteristic, reduce weak contact, avoid switching ablation and adhesion, with improve the reliability of switch and into
Product rate.
The concrete technical scheme of the present invention is as follows：Primary structure of the present invention by substrate, microwave transmission line, driving electrodes, on
Electrode, bottom electrode, release aperture, fixed anchor point, air bridges, lead composition；The substrate 1 is used as double spring beam contact structures
RF MEMS Switches carrier structure, carry the microwave transmission line, when by lead to the driving electrodes 4 apply drive
During voltage, electrostatic force is produced between the Top electrode 11 and the driving electrodes 4 so that Top electrode 11 is towards the microwave transmission
Line direction produces bending, is contacted with the left contact 17 and right contact 10, now, the RF MEMS Switches are in opening state
State；When the driving electrodes 4 do not apply driving voltage, the Top electrode 11 and the left contact 17 and right contact 10 are mutual
Disconnect, now, the RF MEMS Switches are closed.
The substrate 1 is rectangular parallelepiped structure.
The switch module of the RF MEMS Switches break-make is arranged on above the substrate 1, and the switch module includes
The microwave transmission line of signal is transmitted, avoids the left contact 17 and right contact 10 of virtual connection.
The bottom electrode uses the double contact structure with double spring beams, and the left spring beam 16 and right spring beam 9 are fixed
On microwave transmission line, the left contact 17 and right contact 10 are respectively equipped with the left spring beam 16 and right spring beam 9, and
Pass through the left contact 17 and the on and off of the control signal of right contact 10.The shape of the left contact 17 and right contact 10
For one kind in cuboid, hemisphere or cone.
The microwave transmission line includes at least one signal wire and at least two ground wires, first signal wire 3 and second
Signal wire 5 is arranged on the middle position of the lining 1, and 2 and second ground wire of the first ground wire, 6 parallel split is believed described first
Number line 3 and the both sides of secondary signal line 5.
The Top electrode 11, and the Top electrode 11 are fixedly installed on first signal wire 3 and secondary signal line 5
The lower section setting left contact 17 and right contact 10, composition control first signal wire 3 and the break-make of secondary signal line 5 are opened
Close branch road.
First signal wire 3 and secondary signal line 5 centre position is disconnected forming fracture, and two segment signal lines are defined
For the first signal wire 3 and secondary signal line 5.
The Top electrode 11, the Top electrode 11 is fixedly installed close to one end of the fracture in first signal wire 3
Positioned at the top of the fracture.
In the lower position of Top electrode 11, the driving electrodes 4 and left spring beam 16 and right spring beam are correspondingly arranged
9。
The lead is arranged on substrate, is connected with driving electrodes.
In the secondary signal line 5 close at fracture end, the left spring beam 16 and right spring beam 9, the left bullet are set
Property beam 16 and the free end of right spring beam 9 and the Top electrode 11 intersection be present.
The left spring beam 16 and right spring beam 9 are fixed on by second fixed anchor point 8, the 5th fixed anchor point 18
On the signal wire 5.
The Top electrode 11 is rectangular parallelepiped structure.
The Top electrode 11 is fixed on first signal wire 3 by first fixed anchor point 7.
The perforate of Top electrode 11, the diameter of release aperture 12 are 6-10 μm, form the array of release aperture 12.
The array of release aperture 12 is arranged to 3-4 rows, and the spacing of release aperture 12 is 10-20 μm.
The switch module also includes at least the first fixed anchor point 7, the second fixed anchor point 8, the 3rd fixed anchor point 13, and the 4th
Fixed anchor point 15, the 5th fixed anchor point 18 and air bridges 14.
The air bridges 14 are rectangular parallelepiped structures, and the air bridges 14 are solid by the 3rd fixed anchor point the 13, the 4th
Determine anchor point 15 to fix on second ground wire 6, the air bridges 14 are formed with the ground wire 6 of the first ground wire 2 and second to be allowed
The space that lead passes through.
Beneficial effect
The present invention has obvious advance compared with background technology, and the RF MEMS Switches, its bottom electrode is to carry
The double contact structure of double spring beams, spring beam are fixed on microwave transmission line by fixed anchor point, are respectively equipped with double spring beams
Contact, said from mechanical property, Top electrode quick pull-down under electrostatic interaction can be reduced and, to impact caused by bottom electrode, played
Cushioning effect, so as to protect contact and Top electrode, said from electric property, effective contact can be strengthened, avoid what weak contact was brought
Switch ablation and adhesion, the present invention effectively improve traditional double-contact virtual connection caused by integrity problem, make life-span of switch
It is greatly improved.
Brief description of the drawings
Fig. 1 is the overall structure figure of the RF MEMS Switches；
Fig. 2 is the overall structure top view of the RF MEMS Switches；
Fig. 3 is the construction of switch figure of the RF MEMS Switches；
Fig. 4 is the construction of switch top view of the RF MEMS Switches；
Fig. 5 is the construction of switch front view of the RF MEMS Switches；
Fig. 6 is the cuboid contact junction composition of the RF MEMS Switches；
Fig. 7 is the cuboid contact structure top view of the RF MEMS Switches；
Fig. 8 is the hemisphere contact junction composition of the RF MEMS Switches；
Fig. 9 is the hemisphere contact structure top view of the RF MEMS Switches；
Figure 10 is the cone contact junction composition of the RF MEMS Switches；
Figure 11 is the cone contact structure top view of the RF MEMS Switches；
Figure 12 is the single contact RF MEMS Switches structure chart；
Figure 13 is the three contacts RF MEMS Switches structure chart；
Figure 14 is the air bridge structure figure of the RF MEMS Switches；
Figure 15 is the air bridge structure top view of the RF MEMS Switches；
Figure 16 is the air bridge structure front view of the RF MEMS Switches.
Shown in figure, list of numerals is as follows：
1st, substrate, the 2, first ground wire, the 3, first signal wire, 4, driving electrodes, 5, secondary signal line, the 6, second ground wire, 7,
First fixed anchor point, the 8, second fixed anchor point, the 9, right spring beam, 10, right contact, 11, Top electrode, 12, release aperture, the 13, the 3rd
Fixed anchor point, 14, air bridges, the 15, the 4th fixed anchor point, 16, left spring beam, 17, left contact, the 18, the 5th fixed anchor point, 19,
Single contact, 20, single contact spring beam, 21 the 5th fixed anchor points, the 22, first contact, the 23, first spring beam, the 24, the 6th fix anchor
Point, the 25, second contact, the 26, second spring beam, the 27, the 7th fixed anchor point, the 28, the 3rd contact, the 29, the 3rd spring beam, 30,
Eight fixed anchor points, 31, lead.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, is only used for explaining the present invention, and is not considered as limiting the invention.
In the description of the invention, it is to be understood that term " " center ", " on ", " under ", "front", "rear", " left side ",
The orientation or position relationship of instructions such as " right sides " are based on orientation shown in the drawings or position relationship, are for only for ease of and describe this hair
It is bright and simplify description, rather than instruction or imply that signified combination or element must have specific orientation, with specific orientation
Construction and operation, therefore be not considered as limiting the invention.In addition, during the description of the embodiment of the present invention, Suo Youtu
In " on ", " under ", "front", "rear", the device position relation such as "left", "right", using Fig. 1 as standard.
As shown in Figure 1, 2, it is the overall structure figure and top view of inventive embodiments, this embodiment offers one kind to carry bullet
The RF MEMS Switches of property beam contact, the RF MEMS Switches include substrate 1, microwave transmission line, driving electrodes 4, Top electrode
11, left contact 17 and right contact 10, left spring beam 16 and right spring beam 9, release aperture 12, the first fixed anchor point 7, second fixes
Anchor point 8, the 3rd fixed anchor point 13, the 4th fixed anchor point 15, the 5th fixed anchor point 18, air bridges 14.Described in the substrate 1 is used as
The carrier structure of RF MEMS Switches, the microwave transmission line is carried, driving electrodes 4, Top electrode 11, left contact 17 and the right side are touched
Point 10, left spring beam 16 and right spring beam 9, release aperture 12, the first fixed anchor point 7, the second fixed anchor point 8, the 3rd fixed anchor point
13, the 4th fixed anchor point 15, the 5th fixed anchor point 18, air bridges 14, lead 31, when by the lead 31 to the driving
When electrode 4 applies driving voltage, electrostatic force is produced between the Top electrode 11 and the driving electrodes 4 so that the court of Top electrode 11
Bending is produced to the microwave transmission line direction, is contacted with the left contact 17 and right contact 10, now, the RF MEMS
Switch is in opening；When the driving electrodes 4 do not apply driving voltage, the Top electrode 11 and the left contact 17,
And right contact 10 mutually disconnects, now, the RF MEMS Switches are closed.
The substrate 1 is rectangular parallelepiped structure, and the microwave transmission line is set on the surface of the substrate 1, and the microwave passes
Defeated line includes the first signal wire 3, secondary signal line 5, the first ground wire 2 and the second ground wire 6, the interposition of the microwave transmission line
Put, i.e., disconnected with the center overlapping position of substrate 1, form fracture, the microwave transmission line 5 is divided to for two by the fracture
Section, the first signal wire 3 and secondary signal line 5 are defined as herein, driving electrodes 4, i.e., described driving electrodes 4 are set in the fracture
It is fixedly installed on the center position of the substrate 1.
First signal wire 3 and secondary signal line 5 perpendicular to the base of substrate 1, two first ground wires 2 and
Second ground wire 6, is separately positioned on the first signal wire 3 and secondary signal line 5 both sides, and with first signal wire 3 and
The distance of secondary signal line 5 is the same.
The material of the substrate 1 is glass, ceramics and High Resistivity Si, because such conductance is relatively low, ensure that transmission is penetrated
Low loss characteristic during frequency signal.
First signal wire 2 sets Top electrode 11 close on the fracture end face, first signal wire 2 with it is described on
The end of electrode 11 is fixedly installed by first fixed anchor point 7, and the Top electrode 11 is rectangular parallelepiped structure, because the microwave passes
Defeated line is coplanar waveguide structure, and characteristic impedance is the important parameter of co-planar waveguide.Require to make switch defeated in preparation process
It is equal with the characteristic impedance of radio system to enter the characteristic impedance of output port, to reach the matching properties of port.
As shown in Fig. 3,4,5, the perforate of Top electrode 11, the diameter of release aperture 12 is 6-10 μm, forms release
The array of hole 12.The array of release aperture 12 is arranged to 3-4 rows, and the spacing of release aperture 12 is 10-20 μm.
The secondary signal line 5 sets the left spring beam 16 and right spring beam 9, the left bullet close to the fracture end
Property beam 16 and right spring beam 9 are fixed with the secondary signal line 5 by the fixed anchor point 18 of the second fixed anchor point 8 and the 5th
Connection, and the end of secondary signal line 5 is stretched out, the left spring beam 16 and right spring beam 9 are located under the Top electrode 11
Side, and in the Top electrode 11 towards setting the left contact 17 above the left spring beam 16 and right spring beam 9 and right touch
Point 10, when the Top electrode 11 is bent by electrostatic force, the Top electrode 11 and the left spring beam 16 and right spring beam 9 are logical
Cross the left contact 17 and right contact 10 to contact with each other, turn on the RF MEMS Switches.As shown in Fig. 6,7,8,9,10,11,
One kind being shaped as in cuboid, hemisphere or cone of the left contact 17 and right contact 10.
As shown in Figure 14,15,16, the air bridges 14 are solid by the 3rd fixed anchor point 13, the 4th fixed anchor point 15
On the fixed ground wire 6 of first ground wire 2 or second.The air bridges 14 are rectangular parallelepiped structures, and both ends are fixed on the 3rd fixed anchor point
13rd, above the 4th fixed anchor point 15, two fixed anchor points are separately fixed at the first ground wire 2 and the second ground wire 6 of microwave transmission line
Both ends, facilitate lead by, be advantageous to improve switch miniaturization.
Inventive principle is：Using RF MEMS Switches of the present invention, when driving electrodes 4 do not apply driving voltage, institute
State Top electrode 11 to disconnect with microwave transmission line, it is closed mode to make switch.When applying driving voltage in the driving electrodes 4,
Electrostatic force is produced between the Top electrode 11 and driving electrodes 4, Top electrode 11 with microwave transmission line is passed through the left side after bending
Spring beam 16 and right spring beam 9 contact, and it is opening to make switch.Because the bottom electrode of the RF MEMS Switches uses band
There is the double contact structure of double spring beams, said from mechanical property, Top electrode quick pull-down under electrostatic interaction hits touching for bottom electrode
During point, elastic beam stress is bent downwardly, and reduces impact, plays cushioning effect, so as to protect contact and Top electrode；From electricity
Performance is said, because the height of two contacts of technological problemses necessarily has certain difference, when Top electrode drop-down and two contacts
When, first with higher contact, the spring beam where higher contact is bent downwardly Top electrode, Top electrode continue to move downward with
Another contact, another elastic beam stress are bent downwardly so that Top electrode fully contacts with two contact points, avoids weak
Contact the switch ablation and adhesion that bring, the present invention effectively improve traditional double-contact virtual connection caused by integrity problem, make
The life-span of switch is greatly improved.
As shown in Figure 12,13, the spring beam number of switch includes two but is not limited only to two, can also make one or
Three etc., the number of contact is consistent with spring beam.
Claims (10)
1. a kind of RF MEMS Switches with spring beam contact, it is characterised in that the switch includes：
Substrate, the substrate are the pedestal supporting body of the RF MEMS Switches；
Top electrode, the Top electrode are rectangular parallelepiped structure, and described Top electrode one end is fixed on the signal line by anchor point, institute
State the middle part of Top electrode and the other end is extended above the substrate level；
Bottom electrode, the bottom electrode include two parallel arrangeds and have the elastic beam structure of contact respectively, and the contact is placed in
The vertical lower section of the Top electrode other end；
Driving electrodes, the driving electrodes are placed at the substrate top surface center, while are placed in the vertical lower section of the Top electrode,
The Top electrode at the driving electrodes opposite position with offering release hole array；
The bottom electrode is fixed on the signal line by anchor point.
Lead, the lead are arranged on substrate, are connected with driving electrodes.
A kind of 2. RF MEMS Switches with spring beam contact according to claim 1, it is characterised in that the release
Hole array includes multiple release apertures in array-like arrangement；
The release hole array is arranged including 3-4, is arranged by the length direction of the signal wire, the release hole number of any one row is
6-10；
The release pore diameter size is 6-10 μm, often arranges or often spacing is 10-20 μ between two release apertures of vertical arbitrary neighborhood
m。
3. a kind of RF MEMS Switches with spring beam contact according to claim 1, it is characterised in that any described
Spring beam one end is fixed on substrate, and the contact is set above the other end.
A kind of 4. RF MEMS Switches with spring beam contact according to claim 3, it is characterised in that the elasticity
Girder construction includes left spring beam and right spring beam, and the left spring beam and right spring beam are disposed side by side under the Top electrode
Side, and in one end towards the Top electrode, the contact is fixedly installed.
The number of the spring beam includes two but is not limited only to two, and contact is designed with each spring beam.
A kind of 5. RF MEMS Switches with spring beam contact according to claim 4, it is characterised in that the contact
Shape include but is not limited to cuboid, hemisphere or cone.
A kind of 6. RF MEMS Switches with spring beam contact according to claim 1, it is characterised in that on described,
The side of bottom electrode is provided with air bridges；
The air bridges both ends are connected to ground wire.
A kind of 7. RF MEMS Switches with spring beam contact according to claim 1, it is characterised in that the substrate
Material include but are not limited to glass, ceramics and High Resistivity Si.
A kind of 8. RF MEMS Switches with spring beam contact according to claim 1, it is characterised in that the signal
Line concordantly extends the bottom electrode close to described driving electrodes one end, and the bottom electrode is fixed towards described Top electrode one end and set
Put the elastic beam structure.
A kind of 9. RF MEMS Switches with spring beam contact according to claim 6, it is characterised in that the signal
Line, ground wire are elongate in shape, and the ground wire quantity is two, and two ground wires are equidistantly separately positioned on the signal wire
Both sides.
10. a kind of RF MEMS Switches with spring beam contact according to claim 5, it is characterised in that describedly
The line opening position most short with driving electrodes distance sets the air bridges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710607497.7A CN107437484A (en) | 2017-07-24 | 2017-07-24 | A kind of RF MEMS Switches with spring beam contact |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710607497.7A CN107437484A (en) | 2017-07-24 | 2017-07-24 | A kind of RF MEMS Switches with spring beam contact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107437484A true CN107437484A (en) | 2017-12-05 |
Family
ID=60460017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710607497.7A Pending CN107437484A (en) | 2017-07-24 | 2017-07-24 | A kind of RF MEMS Switches with spring beam contact |
Country Status (1)
| Country | Link |
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| CN (1) | CN107437484A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417453A (en) * | 2018-01-24 | 2018-08-17 | 瑞声科技（南京）有限公司 | A kind of rf micromechanical switch and production method |
| CN110047662A (en) * | 2019-04-16 | 2019-07-23 | 苏州希美微纳***有限公司 | A kind of high switching capacity ratio RF MEMS capacitive switch |
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| US6570750B1 (en) * | 2000-04-19 | 2003-05-27 | The United States Of America As Represented By The Secretary Of The Air Force | Shunted multiple throw MEMS RF switch |
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Application publication date: 20171205 |
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