CN102201298B - Radio-frequency micromechanical switch with longitudinally- push-pull comb units - Google Patents
Radio-frequency micromechanical switch with longitudinally- push-pull comb units Download PDFInfo
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- CN102201298B CN102201298B CN 201110139909 CN201110139909A CN102201298B CN 102201298 B CN102201298 B CN 102201298B CN 201110139909 CN201110139909 CN 201110139909 CN 201110139909 A CN201110139909 A CN 201110139909A CN 102201298 B CN102201298 B CN 102201298B
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Abstract
The invention discloses a radio-frequency micromechanical switch with longitudinally- push-pull comb units, which comprises a substrate, a coplanar waveguide transmission line and a drive component. The coplanar waveguide transmission line comprises a signal line, a left grounding wire and a right grounding wire, and the signal line comprises an upper port, a lower port and two slender beams; the slender beams are fixedly connected with the top surface of the lower port through an elastic structure, and an interval is arranged between the top end of each slender beam and the bottom of the upper port; the drive component comprises an upper anchoring area, a lower anchoring area, an upper comb structure and a lower comb structure; the upper comb structure and the lower comb structure respectively comprise a fixed comb unit and a movable comb unit; the distribution sequence of the fixed comb unit and the movable comb unit of the lower comb structure is opposite to that of the fixed comb unit and the movable comb unit of the upper comb structure; and the top ends of the slender beams and the bottom of the upper port can be adhered or separate due to the movement of the movable comb units. The radio-frequency micromechanical switch with the structure, disclosed by the invention, can increase the isolation degree and reduce an executing voltage.
Description
Technical field
The present invention relates to a kind of rf micromechanical switch, specifically, relate to a kind of vertically rf micromechanical switch of the comb unit of push-and-pull that has.
Background technology
Existing radio-frequency (RF) switch comprises touch switch and capacitance-type switch.The general structure of touch switch is: adopt the contact or the disconnection of static or other type of drive control signal wire, reach the effect of control switch break-make, its isolation is decided by the parasitic capacitance of breaking part.For the switch that an end disconnects, along with the rising of frequency, parasitic capacitance increases rapidly, causes the isolation of switch to reduce rapidly thereupon, and the distance that increases its breaking part can effectively improve isolation.The general structure of capacitance-type switch is: adopt the motion of static driven mode controlling diaphragm bridge, reach the effect that changes the size that is connected across the electric capacity between holding wire and the ground wire, come the break-make of control signal.Compare with general touch switch, capacitance-type switch can show higher isolation when upper frequency, and its isolation is decided by the dead resistance of film bridge.But because skin effect, along with the rising of frequency, the dead resistance in the capacitance-type switch increases rapidly, causes the isolation of switch to reduce rapidly thereupon.
Summary of the invention
Technical problem: technical problem to be solved by this invention is: a kind of vertically rf micromechanical switch of the comb unit of push-and-pull that has is provided, to improve the isolation of the rf micromechanical switch when the OFF state, reduces the execution voltage of rf micromechanical switch.
Technical scheme:For solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of vertically rf micromechanical switch of the comb unit of push-and-pull that has comprises substrate, coplanar waveguide transmission line and driver part; Described coplanar waveguide transmission line comprises holding wire and is positioned at the left ground wire and the right ground wire of the holding wire left and right sides that holding wire leaves the gap respectively and between left ground wire and the right ground wire; Holding wire comprises upper port and the lower port that is vertical layout, and the two relative slender beams that are in vacant state; Left side ground wire, right ground wire, upper port and lower port are fixedly connected on the substrate respectively; The bottom of slender beam is fixedly connected on the edge of lower port end face by elastic construction, and the top of slender beam and the bottom surface of upper port are gapped; Described driver part comprises the anchor district, comb structure under the district of casting anchor, two groups of upper comb dent structures and two groups; Last anchor district is fixedly connected on the substrate with casting anchor to distinguish to be vertically, and between two slender beams; Upper comb dent structure and following comb structure all are in vacant state, and comb structure comprises the fixed fingers unit that is provided with fixed fingers respectively and is provided with the mobile comb unit of mobile broach under every group of upper comb dent structure and every group; In the comb structure, fixed fingers and mobile broach be cross-distribution from the top down, and gapped between fixed fingers and the mobile broach under every group of upper comb dent structure and every group; Two groups of upper comb dent structures are positioned at the both sides in anchor district, and in every group of upper comb dent structure, the fixed fingers unit horizontal is fixedly connected on the sidewall in anchor district, and mobile comb unit horizontal fixed is connected on the slender beam; Comb structure is positioned at the both sides in the district of casting anchor under two groups, wherein the fixed fingers unit horizontal is fixedly connected on the sidewall in the district of casting anchor, mobile comb unit horizontal fixed is connected on the slender beam, and fixed fingers in the following comb structure and mobile broach distribution sequence are opposite with mobile broach distribution sequence with fixed fingers in the upper comb dent structure; Fit or separate in the top that the moving of mobile comb unit can make slender beam and the bottom surface of upper port.
Beneficial effect: compared with prior art, technical scheme of the present invention has following beneficial effect:
1. rf micromechanical switch has isolation height, the low advantage of execution voltage when OFF state.When rf micromechanical switch is in OFF state, adopt plug-type movable holding wire, it is the gap between slender beam and the upper port, be twice than gap with unidirectional motion, parasitic capacitance value when having reduced OFF state, the isolation of rf micromechanical switch when consequently the rf micromechanical switch structure of the technical program has improved OFF state.When OFF state, the size of the parasitic capacitance of rf micromechanical switch has determined the size of its isolation.Parasitic capacitance is big more, and isolation is more little.And the size of parasitic capacitance is and slender beam and upper port between spacing be inversely proportional to.Under OFF state, between slender beam and the upper port spacing, adopt the mode of push-and-pull to move, push away or only adopt the mode of drawing to move than only adopting, be twice.Like this, under OFF state, adopt the mode of push-and-pull to move, push away or only adopt the mode of drawing to move than only adopting, it is little one times that parasitic capacitance is also wanted.Switch isolation degree when therefore, the rf micromechanical switch of the technical program effectively raises OFF state.Simultaneously, utilize the driver part of comb structure as rf micromechanical switch, the high-aspect-ratio of comb structure, it is lower to carry out voltage.
2. area of chip is little.In the technical program, driver part promptly is positioned at the holding wire inside of rf micromechanical switch between two groups of slender beams.Relative and driver part is arranged on the holding wire outside, and the chip area in the technical program is less, has saved the making raw material.
3. reduce the insertion loss of radio frequency, microwave signal.In the technical program, when rf micromechanical switch is in ON state,, reduced the loss of substrate, thereby reduced the insertion loss of radio frequency, microwave signal because slender beam is in unsettledly.
Description of drawings
Fig. 1 is a vertical view of the present invention.
Fig. 2 is the A-A cutaway view among Fig. 1.
Have among the figure: substrate 1, holding wire 2, upper port 21, lower port 22, slender beam 23, elastic construction 231, left ground wire 3, right ground wire 4, last anchor district 5, upper comb dent structure 6, fixed fingers unit 61, mobile comb unit 62, the district 7 of casting anchor, following comb structure 8, spacing beam 9.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is carried out specific description.
As depicted in figs. 1 and 2, a kind of vertically rf micromechanical switch of the comb unit of push-and-pull that has of the present invention comprises substrate 1, coplanar waveguide transmission line and driver part.Coplanar waveguide transmission line is used to transmit radio frequency, microwave signal.Coplanar waveguide transmission line comprises holding wire 2, left ground wire 3 and right ground wire 4.Left side ground wire 3 and right ground wire 4 are positioned at holding wire 2 left and right sides, and holding wire 2 leaves the gap respectively and between left ground wire 3 and the right ground wire 4.Holding wire 2 comprises upper port 21 and the lower port 22 that is vertical layout, and two slender beams 23.Left side ground wire 3, right ground wire 4, upper port 21 and lower port 22 are fixedly connected on respectively on the substrate 1.Upper port 21 is positioned at the top of lower port 22, and between upper port 21 and the lower port 22 space is arranged.Upper port 21 and lower port 22 are used for the signal output and the input of holding wire 2.If upper port 21 is signal input parts, lower port 22 is exactly a signal output part so.If upper port 21 is signal output parts, lower port 22 is exactly a signal input part so.Two slender beams 23 all are in vacant state, and promptly slender beam 23 does not contact with substrate 1.The bottom of slender beam 23 is fixedly connected on the edge of lower port 22 end faces by elastic construction 231, and the bottom surface of the top of slender beam 23 and upper port 21 is gapped.Because the bottom of slender beam 23 is provided with elastic construction 231, so slender beam 23 can be along the longitudinal movement.The form of elastic construction 231 can have various, the elastic construction 231 among Fig. 1 be in the bottom of slender beam 23 one section to inner process, form an elasticity groove in the bottom of slender beam 23.Can certainly be provided with two or more elasticity grooves in the bottom of slender beam 23.No matter how much quantity of elasticity groove is, they all are positioned at the below of comb structure 8 down, and promptly elastic construction 231 is positioned at the below of comb structure 8 down.Under rf micromechanical switch is in OFF state, gapped between the top of slender beam 23 and the upper port 21.Driver part comprises anchor district 5, comb structure 8 under 7, the two groups of upper comb dent structures 6 in district of casting anchor and two groups.The last anchor district 5 and the district 7 of casting anchor are and vertically are fixedly connected on the substrate 1, and between two slender beams 23.Upper comb dent structure 6 and following comb structure 8 all are in vacant state.Every group of upper comb dent structure 6 comprises fixed fingers unit 61 that is provided with fixed fingers and the mobile comb unit 62 that is provided with mobile broach.Comb structure 8 comprises fixed fingers unit 61 that is provided with fixed fingers and the mobile comb unit 62 that is provided with mobile broach under every group.In the comb structure 8, fixed fingers and mobile broach be cross-distribution from the top down, and gapped between fixed fingers and the mobile broach under every group of upper comb dent structure 6 and every group.Two groups of upper comb dent structures 6 are positioned at the both sides in anchor district 5, and in every group of upper comb dent structure 6, fixed fingers unit 61 horizontal fixed are connected on the sidewall in anchor district 5, and mobile comb unit 62 horizontal fixed are connected on the slender beam 23.Comb structure 8 is positioned at the both sides in the district 7 of casting anchor under two groups, and wherein fixed fingers unit 61 horizontal fixed are connected on the sidewall in the district 7 of casting anchor, and mobile comb unit 62 horizontal fixed are connected on the slender beam 23.Like this, be connected mobile comb unit 62 on the slender beam 23 and can drive slender beam 23 and move up, realize the function that pushes away; Perhaps drive slender beam 23 and move down, realize the function of drawing.Mobile comb unit 62 and fixed fingers unit 61 have the broach of equal number, help arranging of mobile comb unit 62 and fixed fingers unit 61.Fixed fingers in the following comb structure 8 and mobile broach distribution sequence are opposite with mobile broach distribution sequence with fixed fingers in the upper comb dent structure 6.Like this, upper comb dent structure 6 and following comb structure 8 can the functions that realization pushes away, the function that realization is drawn.Fit or separate the ON state of realization switch and the function of OFF state in the top that the moving of mobile comb unit 62 can make slender beam 23 and the bottom surface of upper port 21.
Said structure have vertically that the manufacturing process of the rf micromechanical switch of the comb unit of push-and-pull is: at first etch the last anchor district 5 at the silicon chip back side and the district 7 of casting anchor, and the silicon chip back side and substrate 1 carried out anode linkage, etch the shape of co-planar waveguide then in the silicon chip front of bonding pad, follow splash-proofing sputtering metal layer and etching, obtain holding wire 2, left ground wire 3, right ground wire 4 and the slender beam 23 of coplanar waveguide structure, the method with dark silicon etching carves upper comb dent structure 6 and following comb structure 8 at last.
The operation principle of the rf micromechanical switch of said structure is: by changing the gap length between fixed fingers unit 61 and the mobile comb unit 62, can control the direction of motion of mobile comb unit 62.Because slender beam 23 is provided with elastic construction 231, so slender beam 23 vertically has certain stroke.When the mobile comb unit 62 on being fixedly connected on slender beam 23 moved up, slender beam 23 also can move up, so that can become fit-state from released state between slender beam 23 and the upper port 21; When the mobile comb unit 62 on being fixedly connected on slender beam 23 moves down, slender beam 23 also can move down, so that can become released state from fit-state between slender beam 23 and the upper port 21, and the spacing that this moment, their separated being twice during, thereby finally obtain the effect of vertical push-and-pull than free state.
The concrete course of work of the rf micromechanical switch of said structure is: in structure as shown in Figure 1, radio frequency, microwave signal are connected to the upper port 21 and the lower port 22 of co-planar waveguide, holding wire 2 is defaulted as the direct current zero potential.The current potential of dc offset voltage is loaded in the anchor district 5, and the district 7 of casting anchor does not load current potential.When being biased voltage in the last anchor district 5, high potential in the last anchor district 5 and slender beam 23 produce electrostatic force by upper comb dent structure 6, this electrostatic force produces pulling force upwards in the vertical, make the mobile comb unit 62 that is fixed on the slender beam 23 move up, slender beam 23 and upper port 21 are fitted, radio frequency, microwave signal are transmitted.The current potential of dc offset voltage is loaded in the district 7 of casting anchor, does not load current potential and go up anchor district 5.When being biased voltage in the district 7 of casting anchor, high potential and the slender beam of distinguishing on 7 23 that cast anchor passes through comb structure 8 generation electrostatic force down, this electrostatic force produces downward pulling force in the vertical, make the mobile comb unit 62 that is fixed on the slender beam 23 move down, slender beam 23 separated with upper port 21, blocked the transmission of radio frequency, microwave signal.
The rf micromechanical switch of said structure has isolation height, the low advantage of execution voltage when OFF state.When rf micromechanical switch is in OFF state, adopt plug-type movable holding wire, gap between slender beam 23 and upper port 21 bottom surfaces, be twice than gap with unidirectional motion, parasitic capacitance value when having reduced OFF state, the isolation of rf micromechanical switch when consequently the rf micromechanical switch structure of the technical program has improved OFF state.When OFF state, the size of the parasitic capacitance of rf micromechanical switch has determined the size of its isolation.Parasitic capacitance is big more, and isolation is more little.And the size of parasitic capacitance is and slender beam 23 and upper port 21 between spacing be inversely proportional to.Under OFF state, the spacing between slender beam 23 and the upper port 21 adopts the mode of vertical push-and-pull to move, and pushes away or only adopts the mode of drawing to move than only adopting, and be twice.Like this, under OFF state, adopt the mode of vertical push-and-pull to move, push away or only adopt the mode of drawing to move than only adopting, it is little one times that parasitic capacitance is also wanted.Switch isolation degree when therefore, the rf micromechanical switch of the technical program effectively raises OFF state.Simultaneously, utilize upper comb dent structure 6 and following comb structure 8 driver part as rf micromechanical switch, the high-aspect-ratio of upper comb dent structure 6 and following comb structure 8, it is lower to carry out voltage.In addition, driver part promptly is positioned at holding wire 2 inside of rf micromechanical switch between two slender beams 23, reduced area of chip.When rf micromechanical switch is in ON state, because slender beam 23 is in unsettledly, has reduced the loss of substrate 1, thereby reduced the insertion loss of radio frequency, microwave signal.
Further, the described vertically rf micromechanical switch of the comb unit of push-and-pull that has also comprises spacing beam 9, and this spacing beam 9 is connected the top of two slender beams 23, and is positioned at the top in anchor district 5.Increase is provided with spacing beam 9, can avoid it to be offset in moving process to the location, top of two slender beams 23, can not contact with upper port 21.
Claims (2)
1. one kind has the vertically rf micromechanical switch of the comb unit of push-and-pull, it is characterized in that, comprises substrate (1), coplanar waveguide transmission line and driver part;
Described coplanar waveguide transmission line comprises holding wire (2) and is positioned at the left ground wire (3) and the right ground wire (4) of holding wire (2) left and right sides that holding wire (2) leaves the gap respectively and between left ground wire (3) and the right ground wire (4); Holding wire (2) comprises upper port (21) and the lower port (22) that is vertical layout, and relative two slender beams (23) that are in vacant state; Left side ground wire (3), right ground wire (4), upper port (21) and lower port (22) are fixedly connected on respectively on the substrate (1); The bottom of slender beam (23) is fixedly connected on the edge of lower port (22) end face by elastic construction (231), and the bottom surface of the top of slender beam (23) and upper port (21) is gapped;
Described driver part comprises anchor district (5), comb structure (8) under the district (7) of casting anchor, two groups of upper comb dent structures (6) and two groups; The last anchor district (5) and the district (7) of casting anchor are and vertically are fixedly connected on the substrate (1), and are positioned between two slender beams (23); Upper comb dent structure (6) and following comb structure (8) all are in vacant state, and comb structure (8) comprises fixed fingers unit (61) that is provided with fixed fingers and the mobile comb unit (62) that is provided with mobile broach respectively under every group of upper comb dent structure (6) and every group; In the comb structure (8), fixed fingers and mobile broach be cross-distribution from the top down, and gapped between fixed fingers and the mobile broach under every group of upper comb dent structure (6) and every group; Two groups of upper comb dent structures (6) are positioned at the both sides of anchor district (5), in every group of upper comb dent structure (6), fixed fingers unit (61) horizontal fixed is connected on the sidewall of anchor district (5), and mobile comb unit (62) horizontal fixed is connected on the slender beam (23); Comb structure under two groups (8) is positioned at the both sides of district (7) of casting anchor, wherein fixed fingers unit (61) horizontal fixed is connected on the sidewall of district (7) of casting anchor, mobile comb unit (62) horizontal fixed is connected on the slender beam (23), and fixed fingers in the following comb structure (8) and mobile broach distribution sequence are opposite with mobile broach distribution sequence with fixed fingers in the upper comb dent structure (6); Fit in the top that the moving of mobile comb unit (62) in two groups of upper comb dent structures (6) can make slender beam (23) and the bottom surface of upper port (21), the moving of mobile comb unit (62) under two groups in the comb structure (8) can make the top of slender beam (23) separate with the bottom surface of upper port (21).
2. according to the described vertically rf micromechanical switch of the comb unit of push-and-pull that has of claim 1, it is characterized in that, also comprise spacing beam (9), this spacing beam (9) is connected the top of two slender beams (23), and is positioned at the top of anchor district (5).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110139909 CN102201298B (en) | 2011-05-27 | 2011-05-27 | Radio-frequency micromechanical switch with longitudinally- push-pull comb units |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110139909 CN102201298B (en) | 2011-05-27 | 2011-05-27 | Radio-frequency micromechanical switch with longitudinally- push-pull comb units |
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| CN102201298A CN102201298A (en) | 2011-09-28 |
| CN102201298B true CN102201298B (en) | 2013-07-31 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1501547A (en) * | 2002-11-14 | 2004-06-02 | 东南大学 | Radio-frequency micro-mechanical switch |
| CN1832081A (en) * | 2006-04-17 | 2006-09-13 | 东南大学 | Radio-frequency micro-electronic mechanical double-film parallel capacitive type switch and preparation method thereof |
| CN101197226A (en) * | 2006-12-08 | 2008-06-11 | 合肥工业大学 | Low threshold voltage electrostatic micro-relay |
| KR20100078424A (en) * | 2008-12-30 | 2010-07-08 | 전북대학교산학협력단 | Rf switch using mems |
| CN102064042A (en) * | 2010-12-16 | 2011-05-18 | 东南大学 | Normally open state field emission type radio frequency micro-mechanical switch |
| CN202102985U (en) * | 2011-05-27 | 2012-01-04 | 东南大学 | Radio frequency micro mechanical switch provided with comb tooth unit being pushed and pulled vertically |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009077479A (en) * | 2007-09-19 | 2009-04-09 | Japan Radio Co Ltd | Wireless switching controller |
| KR20090044781A (en) * | 2007-11-01 | 2009-05-07 | 삼성전기주식회사 | Mems switch |
-
2011
- 2011-05-27 CN CN 201110139909 patent/CN102201298B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1501547A (en) * | 2002-11-14 | 2004-06-02 | 东南大学 | Radio-frequency micro-mechanical switch |
| CN1832081A (en) * | 2006-04-17 | 2006-09-13 | 东南大学 | Radio-frequency micro-electronic mechanical double-film parallel capacitive type switch and preparation method thereof |
| CN101197226A (en) * | 2006-12-08 | 2008-06-11 | 合肥工业大学 | Low threshold voltage electrostatic micro-relay |
| KR20100078424A (en) * | 2008-12-30 | 2010-07-08 | 전북대학교산학협력단 | Rf switch using mems |
| CN102064042A (en) * | 2010-12-16 | 2011-05-18 | 东南大学 | Normally open state field emission type radio frequency micro-mechanical switch |
| CN202102985U (en) * | 2011-05-27 | 2012-01-04 | 东南大学 | Radio frequency micro mechanical switch provided with comb tooth unit being pushed and pulled vertically |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2009-77479A 2009.04.09 |
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