CN102020464A - 压电式致动器设备和/或传感器设备的陶瓷材料及其制备方法 - Google Patents
压电式致动器设备和/或传感器设备的陶瓷材料及其制备方法 Download PDFInfo
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- CN102020464A CN102020464A CN2010102828865A CN201010282886A CN102020464A CN 102020464 A CN102020464 A CN 102020464A CN 2010102828865 A CN2010102828865 A CN 2010102828865A CN 201010282886 A CN201010282886 A CN 201010282886A CN 102020464 A CN102020464 A CN 102020464A
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- 229910010293 ceramic material Inorganic materials 0.000 title abstract description 5
- 238000002360 preparation method Methods 0.000 title description 17
- 150000002500 ions Chemical class 0.000 claims abstract description 59
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 22
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000002019 doping agent Substances 0.000 claims abstract description 15
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- 229910052742 iron Inorganic materials 0.000 claims abstract description 13
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 13
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 9
- 239000011591 potassium Substances 0.000 claims abstract description 9
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 9
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 8
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 6
- 239000011734 sodium Substances 0.000 claims description 34
- -1 lanthanum ion ion Chemical class 0.000 claims description 17
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 15
- CZMAIROVPAYCMU-UHFFFAOYSA-N lanthanum(3+) Chemical compound [La+3] CZMAIROVPAYCMU-UHFFFAOYSA-N 0.000 claims description 15
- 229910001416 lithium ion Inorganic materials 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 15
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 13
- 239000002131 composite material Substances 0.000 claims description 13
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 10
- 229910052708 sodium Inorganic materials 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 7
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 229910002367 SrTiO Inorganic materials 0.000 claims description 4
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 claims description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 4
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 4
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 claims description 3
- FSAJRXGMUISOIW-UHFFFAOYSA-N bismuth sodium Chemical compound [Na].[Bi] FSAJRXGMUISOIW-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 description 10
- 238000005245 sintering Methods 0.000 description 6
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910001414 potassium ion Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 229910052712 strontium Chemical group 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical group [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- RJEIKIOYHOOKDL-UHFFFAOYSA-N [Li].[La] Chemical compound [Li].[La] RJEIKIOYHOOKDL-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000005620 antiferroelectricity Effects 0.000 description 1
- XBYNNYGGLWJASC-UHFFFAOYSA-N barium titanium Chemical compound [Ti].[Ba] XBYNNYGGLWJASC-UHFFFAOYSA-N 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000012850 fabricated material Substances 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及一种基于至少铋-钠-钡-锶-钛酸盐的适于压电式致动器设备和/或传感器设备的陶瓷材料(10)，其用含锂、银和/或钾的一价离子和镧、铁、钇、镱和/或铝的三价离子的离子复合物进行复合掺杂。本发明还涉及一种制备适于压电式致动器设备和/或传感器设备的陶瓷材料(10)的方法，其包括步骤：用含锂、银和/或钾的一价离子和镧、铁、钇、镱和/或铝的三价离子的离子复合物掺杂基于至少铋-钠-钡-锶-钛酸盐的材料。本发明还涉及一种压电式致动器设备和/或传感器设备和一种制备压电式致动器设备和/或传感器设备的方法。此外本发明还涉及一种定位元件和制备定位元件的方法。
Description
技术领域
本发明涉及一种用于压电式致动器设备和/或传感器设备的陶瓷材料。本发明还涉及一种制备用于压电式致动器设备和/或传感器设备的陶瓷材料的制备方法。
背景技术
压电式致动器设备和/或传感器设备常具有由压电材料制备的金属化的陶瓷构件。该金属化的陶瓷构件的通常理解是，所施加的电压/电荷导致该构件的体积变化和/或在构件上所施加的力通过感应引起电压变化。
压电式致动器设备和/或传感器设备的构件例如可由锆钛酸铅(PZT)构成、由基于铌酸盐的钙钛矿如铌酸钾钠(KNN)构成或由基于钡-钛的陶瓷材料(BT)构成。此外，在文献“Dielectric and piezoelectric properties of La2O3 doped(Bi0.5Na0.5)0.92(Ba0.8Sr0.2)0.08TiO3 lead-free piezoelectric ceramics”(R.-C.Zhou；Y.-Z.Liu；X.-M.Meng；J.Electroceram(2007)；18：9-12；DOI 10.1007/s 10832-007-9002-0)中提及应用以氧化镧掺杂的(Bi0.5Na0.5)0.92(Ba0.8Sr0.2)0.08TiO3作为压电材料。
发明内容
本发明提供一种具有权利要求1的特征的用于压电式致动器设备和/或传感器设备的陶瓷材料，和一种具有权利要求12的特征的用于制备压电式致动器设备和/或传感器设备的陶瓷材料的方法。
通过用一种由锂离子、银离子、钾离子、镧离子、铁离子、钇离子、镱离子和/或铝离子组成的(准两价)离子复合物对基于至少是铋-钠-钡-锶-钛酸盐的陶瓷材料进行复合掺杂可有利地确保对于应用陶瓷材料作为压电材料的有利的压电特性、优良的电磁特性值和/或较高的使用温度。较高的使用温度意指至少相应于未掺杂的材料的使用温度的温度。特别是通过上述原子的至少一种一价离子和至少一种三价离子共同掺杂可在基于至少铋-钠-钡-锶-钛酸盐的基系中同时得到用至少一种一价离子掺杂的优点和用至少一种三价离子掺杂的优点。
在一个有利的实施方案中，该陶瓷材料所含的至少一种一价离子的浓度为0.1-6.0mol％，所含的至少一种三价离子的浓度为0.1-6.0mol％。在这种浓度下，特别可确保该陶瓷材料的有利的压电系数，即在施加的电压变化/电荷变化下有较大的体积变化。另外，在这种浓度下，还可确保该作为压电材料的陶瓷材料在较高使用温度下有优良的功能性。
在一个优选的实施方案中，该陶瓷材料含有含锂离子和镧离子的离子复合物作为复合掺杂物。通过掺杂时同时使用锂离子和镧离子可组合锂掺杂的优点和镧掺杂的优点。例如与锂掺杂或镧掺杂相比，在用准两价的锂-镧离子复合物对陶瓷材料进行复合掺杂时可确保更好的压电系数。此外，在Co掺杂时使用镧离子有利于该陶瓷材料的微结构，特别是有利于在该陶瓷材料烧结时的致密化。同时，在Co掺杂时使用锂可确保降低烧结温度。此外，锂离子可补偿镧离子降低工作温度的影响。由此，借助于(Li+La3+)2+掺杂可增高使用温度。
锂离子的浓度可不同于镧离子的浓度。通过使用银离子、钾离子、铁离子、钇离子、镱离子和/或铝离子还可改进压电特性、电磁特征值和/或使用温度。
该陶瓷材料优选地具有的钛酸铋钠、钛酸钡和钛酸锶的混合比为a1(Bi0.5Na0.5TiO3)+a2(BaTiO3)+a3(SrTiO3)，其中点P0(a1，a2，a3)位于由点P1(a1＝0.499，a2＝0.001，a3＝0.500)、P2(a1＝0.998，a2＝0.001，a3＝0.001)和P3(a1＝0.500，a2＝0.499，a3＝0.001)所展成的三角形平面中。如此形成陶瓷材料对可实现的压电特性和/或使用温度是特别有利的。
优选是在钠晶格位中排列有至少10％的一价掺杂离子，在铋晶格位中排列有至少10％的三价掺杂离子。有利的是在钠晶格位中或铋晶格位中引入至少50％，尤其是至少90％的一价掺杂离子和/或三价掺杂离子。
另外，该陶瓷材料的一种实施方案也可以是，在钡-锶晶格位中排列有至少10％，优选至少50％，尤其是至少90％的掺杂离子复合物。
此外，在钠晶格位中可排列有至少10％的一价掺杂离子，在钡-晶格位中可排列有至少10％的三价掺杂离子。优选引入钠晶格位中的一价离子和位于钡晶格位中的三价离子的百分比至少为50％，尤其是至少90％。
通过在这些晶格位中有目的地配置掺杂离子复合物，可使该陶瓷材料的特性有目的地最佳化。
在另一优选实施方案中，该陶瓷材料是(Bi0.5-xNa0.5-yXxYy)0.85Ba0.12Sr0.03TiO3、(Bi0.5Na0.5)0.85(Ba0.12Sr0.03)1-20/3(x+y)XxYyTiO3或(Bi0.5Na0.5-yYy)0.85(Ba0.12Sr0.03)1-20x/3XxTiO3，其中X为镧、铁、钇、镱和/或铝的三价离子，Y为锂、银和/或钾的一价离子，x＝y＝[1-6mol％]。特别是在这种组成中，借助(Li+La3+)2+掺杂可将烧结温度降低达100℃。
本发明的陶瓷材料对制备时的工艺波动是非常稳定的。因此该陶瓷材料的制备易于实施且成本低。
此外，该陶瓷材料具有优良的长期稳定性。因此该陶瓷材料在许多应用中可代替含铅的压电材料。
在前面各段中所述的特征在压电式致动器设备和/或传感器设备例如定位元件中也是有利的。该定位元件例如可以是喷射阀的部件。
也可在用于制备压电式致动器设备和/或传感器设备的陶瓷材料的相应制备方法中确保这些所述优点。另外，还可应用该陶瓷材料和/或应用制备该陶瓷材料的制备方法制备有利的压电式致动器设备和/或传感器设备和改进的定位元件。这种制备方法也可考虑用于制备喷射阀。
附图说明
下面按附图阐明本发明的其它特征和优点。
图1示出所述制备方法的一种实施案的流程图；
图2为压电式致动器设备和/或传感器设备的一种实施方案示意图；
图3A-3E为示出所述陶瓷材料的11种所选实施例的特性的坐标系。
具体实施方式
图1示出所述制备方法的一种实施方案的流程图。
在任选的工艺步骤S1中形成基于至少铋-钠-钡-锶-钛酸盐的材料。可确定钛酸铋钠、钛酸钡和钛酸锶的混合比a1(Bi0.5Na0.5TiO3)+a2(BaTiO3)+a3(SrTiO3)，其中确定各分量a1、a2和a3，使得点P0(a1，a2，a3)位于由点P1(a1＝0.499，a2＝0.001，a3＝0.500)、P2(a1＝0.998，a2＝0.001，a3＝0.001)和P3(a1＝0.500，a2＝0.499，a3＝0.001)所展成的三角形平面中。优选该陶瓷材料以(Bi0.5Na0.5)0.85Ba0.12Sr0.03TiO3(BNBST-12-3)或(Bi0.5Na0.5)0.92(Ba0.8Sr0.2)0.08TiO3的组成构成。
但这里所述的方法也可在无工艺步骤S1的情况下进行。也可应用一种基于至少铋-钠-钡-锶-钛酸盐的现成的用于工艺步骤S2的材料代替形成该材料。
在工艺步骤S2中，该基于至少铋-钠-钡-锶-钛酸盐的材料用具有锂、银和/或钾的一价离子和镧、铁、钇、镱和/或铝的三价离子的离子复合物掺杂。在掺杂时该至少一种一价离子的掺杂浓度宜为0.1-6.0mol％，该至少一种三价离子的掺杂浓度宜为0.1-6.0mol％。优选是该复合掺杂如此进行，即使得该至少一种一价离子的浓度和/或至少一种三价离子的浓度为1.0-4.0mol％，尤其是2.5-4.0mol％。
优选是在方法步骤S2中至少应用锂离子和镧离子进行复合掺杂。通过在复合掺杂中应用锂离子和镧离子可制备一种陶瓷材料，其在作为压电材料应用时具有有利的压电系数、较低烧结温度和/或较高使用温度。这种陶瓷材料可有利于形成压电式传感器的灵敏元件或压电式致动器的可变元件。
另外，在方法步骤S2中还可进行铁离子、银离子、钾离子、钇离子、镱离子和/或铝离子的掺杂作为对锂和镧复合掺杂的补充以降低烧结温度、提高工作温度和/或改进压电系数。
用离子复合物掺杂该材料可在方法步骤S2中如此进行，以使这些离子被有目的地引入铋和钠的晶格位中、引入钡和锶的晶格位中或引入钡和钠的晶格位中。步骤S2的这种实施方式的优点借助于下面描述的附图3A-3E明显可见。
图1流程所示的方法可以是制备压电式致动器和/或压电式传感器设备的方法的组成部分。
图2示出该压电式致动器和/或传感器设备的一种实施方案的示意图。
该图示的压电式致动器设备和/或传感器设备具有至少一个设计为敏感元件或可变元件的压电晶体10。只要压电晶体10以敏感元件起作用，则为此设计相关的运行设备12，使之在压电晶体上获得电压U，并基于所获取的电压U建立作用于压电晶体10上的力或相应的物理量。在设计为可变元件的压电晶体10的情况下，运行设备12如此设计，即借助于运行设备12可在压电晶体10上施加电压U/电荷，其中借助于所施加的电压U/电荷可触发该压电晶体10的体积变化。
该图示的致动器设备和/或传感器设备例如可以是定位元件的次单元。应指出，这里所述的压电晶体10的可应用性不限于定位元件的致动件。而是下面更详细描述的压电晶体的陶瓷材料通常可用于压电传感器产品和压电致动器产品，例如也用于压电式驱动装置。
借助于下面详细描述的压电晶体10的实施方案可确保在释放较大的力的情况下该压电晶体10的精密和快速的体积变化/偏移，这确保了该压电式致动器设备和/或传感器设备的有利功能方式。
该压电晶体10由基于至少铋-钠-钡-锶-钛酸盐的并用含锂、银和/或钾的一价离子和镧、铁、钇、镱和/或铝的三价离子的离子复合物进行复合掺杂的陶瓷材料组成。该至少一种一价离子的浓度宜为0.1-6.0mol％。对该至少一种三价离子而言，其浓度也为0.1-6.0mol％是有利的。优选是该至少一种一价离子的浓度和/或该至少一种三价离子的浓度为1.0-4.0mol％，尤其是2.5-4.0mol％。
优选是该陶瓷材料具有混合比a1(Bi0.5Na0.5TiO3)+a2(BaTiO3)+a3(SrTiO3)，即点P0(a1，a2，a3)位于点P1(a1＝0.499，a2＝0.001，a3＝0.500)、P2(a1＝0.998，a2＝0.001，a3＝0.001)和P3(a1＝0.500，a2＝0.499，a3＝0.001)所展成的三角形平面中。特别是该陶瓷材料可以是(Bi0.5-xNa0.5-yXxYy)0.85Ba0.12Sr0.03TiO3、(Bi0.5Na0.5)0.85(Ba0.12Sr0.03)1-20/3(x+y)XxYyTiO3或(Bi0.5Na0.5-yYy)0.85(Ba0.12Sr0.03)1-20x/3XxTiO3，其中X为镧、铁、钇、镱和/或铝的三价离子，Y为锂、银和/或钾的一价离子，其中x＝y＝[1-6mol％]。优选x＝y＝[1-6mol％]。该陶瓷材料也可具有(Bi0.5-xNa0.5-yXxYy)0.92(Ba0.8Sr0.2)0.08TiO3、(Bi0.5Na0.5)0.92(Ba0.8Sr0.2)0.8-20/3(x+y)XxYyTiO3或(Bi0.5Na0.5-yYy)0.92(Ba0.8Sr0.2)0.8-20x/3XxTiO3的组成。特别对于X＝镧和Y＝锂，在用作压电材料时可确保有利的低烧结温度、较高的工作温度和/或较大的压电系数。
但这里所述的优点不限于锂离子和镧离子用于复合掺杂。为代替或增补用锂离子和镧离子的复合掺杂，该陶瓷材料也可具有含银离子、钾离子、铁离子、钇离子、镱离子和/或铝离子的准两价离子复合物。这里所述离子的任意组合均是有利的。特别是该陶瓷材料也可具有所述离子的组合，其中锂浓度不等于镧浓度。以此方式可使适于压电式致动器设备和/或传感器设备的陶瓷材料的应用可能性有目的地最佳化。如下面还要详述的，该掺杂离子可有目的地排列在该陶瓷材料的特定晶格位中。
但要指出的是，对压电晶体10的陶瓷材料未确定特定的钡-锶比。例如钛酸钡和钛酸锶成分可如此变化，使得锶浓度为0-25mol％和/或钡浓度为0-50mol％。
优选该压电晶体10的陶瓷材料是不含铅的陶瓷材料。因为上述材料在用作压电材料时具有优良的压电系数和较高的工作温度，所以不需加入铅。因此该陶瓷材料的制备、处置和/或再循环可在对环境无危害的情况下进行。
该压电晶体10的陶瓷材料的制备例如可借助于上述制备方法简单且低成本进行。
图3A-3E示出说明该陶瓷材料的11个所选实例的特性的坐标系。
在图3A-3E的坐标系中，横轴相应于施加在相应陶瓷材料上的电压U(kV/mm)。图3A-3C的坐标系的纵轴示出对由电压U所算出的该陶瓷材料的(有效)压电系数d(pm/V)。在图3D和3E中，纵轴示出该陶瓷材料在所施加的电压U时的膨胀Δ[以千分率0/00表示]。
在检测该陶瓷材料的11个实例时，为对比也对相应电压u算出了(Bi0.5Na0.5)0.85Ba0.12Sr0.03TiO3(BNBST-12-3)的(有效)压电系数d。该算出的BNBST-12-3的(有效)压电系数d的值以图线20示于图3A-3C的坐标系中。
用其它图线即30-36、40-44和50-56示出基于铋-钠-钡-锶-钛酸盐并用锂-镧-离子复合物进行复合掺杂的陶瓷材料的实例。但在制备该总共11个实例时应用了不同的配方A、B和C。
图3A中所示的图线30-36示出具有等价取代的配方A的(有效)压电系数d。该等价取代可用下列组成示出：
配方A：(Bi0.5-xNa0.5-yLaxLiy)0.85Ba0.12Sr0.03TiO3，
其中x＝y＝[1，2，3，4mol％]。
由此，在配方A中锂离子优选引入钠晶格位，镧离子优选引入铋晶格位。浓度分别为1mol％(图线30)、2mol％(图线32)、3mol％(图线34)和4mol％(图线36)。
特别是在对比图线20和30-36时看出，在电压U为3-4kv/mm范围内时，与BNBST-12-3相比，所有配方A的组成均有提高的有效压电系数d。由此与BNBST-12-3相比，图线30-36的陶瓷材料呈更硬的铁电性。
图3B坐标系中的图线40-44的陶瓷材料基于配方B，其中镧离子和锂离子优选/有目的地引入到钡晶格位和锶晶格位中：
配方B：(Bi0.5Na0.5)0.85(Ba0.12Sr0.03)1-20/3(x+y)LaxLiyTiO3，
其中x＝y＝[1，2，4mol％]。
锂浓度与镧浓度相等，分别为1mol％(图线40)、2mol％(图线42)和4mol％(图线44)。
与BNBST-12-3(图线20)相比，具有浓度为1mol％和2mol％(图线40和42)的配方B具有更好的膨胀特性，特别是在3-4kV/mm的电压U范围内。
与图线50-56相关的配方C有下列组成：
配方C：(Bi0.5Na0.5-yLiy)0.85(Ba0.12Sr0.03)1-20x/3LaxTiO3，
其中x＝y＝[1，2，3，4mol％]。
在配方C中，有目的地/优选将锂离子引入钠晶格位和将镧离子引入钡晶格位。锂离子与镧离子有相同浓度，分别为1mol％(图线50)、2mol％(图线52)、3mol％(图线54)和4mol％(图线56)。
如由图线20与图钱50-56相比看出，在配方C中，对于镧浓度和锂浓度为1mol％(图线50)的情况，在所施加电压U为3-4kV/mm范围内时所获得的陶瓷材料显示有利的膨胀特性。
总之可以确定，与BNBST-12-3(图线20)相比，图线30-36、40-44和50-56中的许多陶瓷材料均具有更好的压电系数d。特别是含镧浓度和锂浓度各为2mol％的配方A(图线32)和含镧浓度和锂浓度各为1mol％的配方C(图线50)在电压U为3-4kV/mm范围时比BNBST-12-3有高得多的(有效)压电系数d。由此这类陶瓷材料的应用特别有利。
图线30、34、36、40-44和52-56显示出相关陶瓷材料的典型铁电特性。图线32和50显示出不一致的特性，其可称为典型的抗铁电性。
图3D和3E的坐标系示出含镧浓度和锂浓度各为4mol％的配方A(图线60)的陶瓷材料和含镧浓度和锂浓度各为1mol％的配方C(图线62)的陶瓷材料的膨胀滞后曲线。
Claims (14)
1.至少基于铋-钠-钡-锶-钛酸盐的用于压电式致动器设备和/或传感器设备的陶瓷材料(10)，其特征在于，用含锂、银和/或钾的一价离子和镧、铁、钇、镱和/或铝的三价离子的离子复合物进行复合掺杂。
2.权利要求1的陶瓷材料(10)，其中该陶瓷材料(10)所含的至少一种一价离子的浓度为0.1mol％-6.0mol％，所含的至少一种三价离子的浓度为0.1mol％-6.0mol％。
3.权利要求1或2的陶瓷材料(10)，其中该陶瓷材料(10)具有含锂离子和镧离子的离子复合物作为复合掺杂物。
4.权利要求3的陶瓷材料(10)，其中锂离子的浓度与镧离子的浓度不同。
5.上述权利要求之一的陶瓷材料(10)，其中该陶瓷材料(10)和钛酸铋钠、钛酸钡和钛酸锶的混合比为a1(Bi0.5Na0.5TiO3)+a2(BaTiO3)+a3(SrTiO3)，其中点P0(a1，a2，a3)位于由点P1(a1＝0.499，a2＝0.001，a3＝0.500)、P2(a1＝0.998，a2＝0.001，a3＝0.001)和P3(a1＝0.500，a2＝0.499，a3＝0.001)所展成的三角形平面中。
6.上述权利要求之一的陶瓷材料(10)，其中在钠晶格位中排列有至少10％的一价掺杂离子，在铋晶格位中排列有至少10％的三价掺杂离子。
7.上述权利要求之一的陶瓷材料(10)，其中在钡-锶晶格位中排列有至少10％的掺杂离子复合物。
8.上述权利要求之一的陶瓷材料(10)，其中在钠晶格位中排列有至少10％的一价掺杂离子，在钡晶格位中排列有至少10％的三价掺杂离子。
9.上述权利要求之一的陶瓷材料(10)，其中该陶瓷材料(10)是(Bi0.5-xNa0.5-yXxYy)0.85Ba0.12Sr0.03TiO3、(Bi0.5Na0.5)0.85(Ba0.12Sr0.03)1-20/3(x+y)XxYyTiO3或(Bi0.5Na0.5-yYy)0.85(Ba0.12Sr0.03)1-20x/3XxTiO3，其中X为镧、铁、钇、镱和/或铝的三价离子，Y为锂、银和/或钾的一价离子，x＝y＝[1-6mol％]。
10.压电式致动器设备和/或传感器设备，其具有由上述权利要求之一的陶瓷材料(10)制成的敏感元件和/或可变元件。
11.定位元件，其具有带有由权利要求1-9之一的陶瓷材料(10)制成的可变元件的压电式致动器。
12.用于制备压电式致动器设备和/或传感器设备用陶瓷材料(10)的方法，包括下列步骤：用含有锂、银和/或钾的一价离子和镧、铁、钇、镱和/或铝的三价离子的离子复合物掺杂至少基于铋-钠-钡-锶-钛酸盐的材料。
13.用于制备压电式致动器设备和/或传感器设备的方法，其包括下列步骤：由权利要求1-9之一的陶瓷材料(10)或通过按权利要求12的方法制备敏感元件和/或可变元件的陶瓷材料(10)形成敏感元件和/或可变元件。
14.制备定位元件的方法，其包括下列步骤：由权利要求1-9之一的陶瓷材料(10)或通过按权利要求12的方法制备可变元件的陶瓷材料(10)形成定位元件的压电式致动器的可变元件。
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103153910A (zh) * | 2010-09-16 | 2013-06-12 | 爱普科斯公司 | 基于钙钛矿陶瓷Bi0.5Na0.5TiO3的陶瓷材料、包含该陶瓷材料的压电驱动器和用于制备该陶瓷材料的方法 |
| CN103979955A (zh) * | 2014-05-13 | 2014-08-13 | 哈尔滨工业大学 | 锂-铝离子对掺杂改性的钛酸钡基无铅压电陶瓷材料及其制备方法 |
| CN107851511A (zh) * | 2015-07-17 | 2018-03-27 | 埃普科斯股份有限公司 | 介电组成、介电元件、电子部件和层压电子部件 |
| CN109320241A (zh) * | 2018-10-22 | 2019-02-12 | 西安电子科技大学 | 一种锂铝共掺杂铪钛酸铅-铌镍酸铅压电陶瓷的制备方法 |
| CN110877978A (zh) * | 2019-12-23 | 2020-03-13 | 桂林电子科技大学 | 氧化物(Na0.5Bi0.5)1-xMexTiO3稀磁铁电半导体陶瓷及其制备方法 |
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| CN1269773A (zh) * | 1997-09-05 | 2000-10-11 | 创新陶瓷工程技术公司 | 高效压电陶瓷 |
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| CN1269773A (zh) * | 1997-09-05 | 2000-10-11 | 创新陶瓷工程技术公司 | 高效压电陶瓷 |
| CN1541978A (zh) * | 2003-11-07 | 2004-11-03 | 四川大学 | 钛酸铋钠锂钡锶钙系无铅压电陶瓷 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103153910A (zh) * | 2010-09-16 | 2013-06-12 | 爱普科斯公司 | 基于钙钛矿陶瓷Bi0.5Na0.5TiO3的陶瓷材料、包含该陶瓷材料的压电驱动器和用于制备该陶瓷材料的方法 |
| CN103979955A (zh) * | 2014-05-13 | 2014-08-13 | 哈尔滨工业大学 | 锂-铝离子对掺杂改性的钛酸钡基无铅压电陶瓷材料及其制备方法 |
| CN103979955B (zh) * | 2014-05-13 | 2015-06-03 | 哈尔滨工业大学 | 锂-铝离子对掺杂改性的钛酸钡基无铅压电陶瓷材料的制备方法 |
| CN107851511A (zh) * | 2015-07-17 | 2018-03-27 | 埃普科斯股份有限公司 | 介电组成、介电元件、电子部件和层压电子部件 |
| CN107851511B (zh) * | 2015-07-17 | 2019-07-09 | 埃普科斯股份有限公司 | 介电组成、介电元件、电子部件和层压电子部件 |
| US10450234B2 (en) | 2015-07-17 | 2019-10-22 | Tdk Electronics Ag | Dielectric composition, dielectric element, electronic component and laminated electronic component |
| CN109320241A (zh) * | 2018-10-22 | 2019-02-12 | 西安电子科技大学 | 一种锂铝共掺杂铪钛酸铅-铌镍酸铅压电陶瓷的制备方法 |
| CN110877978A (zh) * | 2019-12-23 | 2020-03-13 | 桂林电子科技大学 | 氧化物(Na0.5Bi0.5)1-xMexTiO3稀磁铁电半导体陶瓷及其制备方法 |
| CN110877978B (zh) * | 2019-12-23 | 2022-04-05 | 桂林电子科技大学 | 氧化物(Na0.5Bi0.5)1-xMexTiO3稀磁铁电半导体陶瓷及其制备方法 |
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| IT1400777B1 (it) | 2013-07-02 |
| FR2950049A1 (fr) | 2011-03-18 |
| ITMI20101637A1 (it) | 2011-03-17 |
| DE102009029511A1 (de) | 2011-04-07 |
| FR2950049B1 (fr) | 2018-01-19 |
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