CN101982875A - N基材二极管共阳半桥在to-220中的封装结构 - Google Patents

N基材二极管共阳半桥在to-220中的封装结构 Download PDF

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CN101982875A
CN101982875A CN2010102694663A CN201010269466A CN101982875A CN 101982875 A CN101982875 A CN 101982875A CN 2010102694663 A CN2010102694663 A CN 2010102694663A CN 201010269466 A CN201010269466 A CN 201010269466A CN 101982875 A CN101982875 A CN 101982875A
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徐永才
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QUALITY LEAD ELECTRON (SUZHOU) CO Ltd
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Abstract

本发明提供一种N基材二极管共阳半桥在TO-220中的封装结构，包括一块绝缘导热的氧化铝陶瓷基板，氧化铝陶瓷基板的正面设置有两块相互独立的金属层，氧化铝陶瓷基板的反面设置有至少一块金属层，氧化铝陶瓷基板反面的金属层与散热板相连接，氧化铝陶瓷基板正面的两块金属层分别与左侧引线和右侧引线相连接，两只二极管的N极分别连接在左侧引线和右侧引线上，为两个阴极，两只二极管的P极分别通过铝线连接在中间引线上，为共阳极。其工艺简单、制造难度低、良品率及可靠性稳定，且二极管的有效散热量高，适用于用N基材二极管组装成共阳半桥器件。

Description

N基材二极管共阳半桥在TO-220中的封装结构
技术领域
本发明涉及一种由N基材肖特基二极管或快恢复二极管构成的共阳半桥在TO-220中的封装结构，属于二极管器件的封装结构技术领域。
背景技术
随着新能源及开关电源日益普及和广泛应用，需大量使用高性能的高频大功率整流器件。而在电子线路设计中，TO-220封装形式的整流器件应用更为广泛。为使全波整流及全桥整流电路在设计使用中经济简化合理，需要用TO-220封装形式的共阴、共阳半桥整流器件共同组成，并且两者性能需完全一致。如图1所示，全桥整流电路由四个整流二极管构成共阴半桥A和共阳半桥B，其中所述的二极管为肖特基二极管或快恢复二极管。
目前高频整流器件的二极管以N基材为主，封装成共阴半桥器件是常规的封装，如图2、图3、图4所示，共阴半桥在TO-220中的封装结构如下：中间引线12的反面与散热板2相连接，两只二极管3的N极分别固定在中间引线12的正面上，作为共阴极，两只二极管3的P极通过铝线4分别与左侧引线11和右侧引线13的相连通，作为两个阳极。
但用N基材二极管封装成共阳半桥器件时，因极性相反需倒装，但是由于N基材的N区电极的边框与P区电极在同一平面上，在倒装共晶焊接时会造成短路，所以只能用小于P区面积的铜垫5垫在P区上倒装悍接。如图5、图6、图7所示，传统共阳半桥在TO-220中的封装结构如下：中间引线12的反面与散热板2相连接，两只二极管3的P极分别连接一个铜垫5，铜垫5的面积小于P极面积，两个铜垫5均固定在中间引线12的正面上，作为共阳极，两只二极管3的N极通过连接片6分别与左侧引线11和右侧引线13相连通，作为两个阴极。此种封装结构工艺较复杂、制造难度大、良品率及可靠性不稳定，其中良品率只能达到60％～85％，且由于铜垫5与中间引线12的接触面积较小，所以二极管的有效散热量大大降低，与同规格二极管封装的共阴半桥器件相比，使用电流降低20～30％，导致使用同规格二极管封装后的共阳、共阴半桥器件，由于性能不一致而不能匹配使用。
发明内容
本发明的目的是克服现有技术存在的不足，提供一种N基材二极管共阳半桥在TO-220中的封装结构。
本发明的目的通过以下技术方案来实现：
N基材二极管共阳半桥在TO-220中的封装结构，特点是：包括一块绝缘导热的氧化铝陶瓷基板，所述氧化铝陶瓷基板的正面设置有两块相互独立的金属层，氧化铝陶瓷基板的反面设置有至少一块金属层，氧化铝陶瓷基板反面的金属层与散热板相连接，氧化铝陶瓷基板正面的两块金属层分别与左侧引线和右侧引线相连接，两只二极管的N极分别连接在左侧引线和右侧引线上，为两个阴极，两只二极管的P极分别通过铝线连接在中间引线上，为共阳极。
进一步地，上述的N基材二极管共阳半桥在TO-220中的封装结构，其中，所述的二极管为肖特基二极管或快恢复二极管。
更进一步地，上述的N基材二极管共阳半桥在TO-220中的封装结构，其中，所述的氧化铝陶瓷基板反面的金属层与散热板之间通过Sb5Pb92.5Ag2.5焊料烧结连接，所述的氧化铝陶瓷基板正面的两块金属层与左侧引线和右侧引线之间均通过Sb5Pb92.5Ag2.5焊料烧结连接。
本发明技术方案突出的实质性特点和显著的进步主要体现在：
①N基材二极管共阳半桥采用上述封装结构后，与使用同属性、同规格的N基材二极管封装的共阴半桥相比，实现了电性能、良品率、可靠性完全一致，从而解决了后道高频桥式整流电路设计时器件选用的难题；
②工艺简单、容易实施，良品率高达99％以上；
③N基材二极管共阳半桥采用上述封装结构后，与共阴半桥使用的二极管规格相同，从而使二极管制造工艺容易实施且工艺简单可靠、一致性好、成品合格率高、成本低，综合经济成本可降低约50％。
附图说明
下面结合附图对本发明技术方案作进一步说明：
图1是背景技术中全桥整流电路的示意图；
图2是背景技术中共阴半桥在TO-220中的封装结构的主视结构示意图；
图3是图2的左视结构示意图；
图4是背景技术中共阴半桥在TO-220中的封装结构的外形结构示意图；
图5是背景技术中传统共阳半桥在TO-220中的封装结构的主视结构示意图；
图6是图5的左视结构示意图；
图7是背景技术中传统共阳半桥在TO-220中的封装结构的外形结构示意图；
图8是本发明N基材二极管共阳半桥在TO-220中的封装结构的分解结构示意图；
图9是本发明N基材二极管共阳半桥在TO-220中的封装结构的组装结构示意图；
图10是图9的左视结构示意图；
图11是本发明N基材二极管共阳半桥在TO-220中的封装结构的外形结构示意图。
图中各附图标记的含义见下表：
Figure BSA00000252410900041
具体实施方式
如图8、图9、图10、图11所示，N基材二极管共阳半桥在TO-220中的封装结构，包括一块绝缘导热的氧化铝陶瓷基板1，氧化铝陶瓷基板1的正面和反面均设置有两块相互独立的金属层，从而可以使在使用氧化铝陶瓷基板1时不需刻意区分正反面，氧化铝陶瓷基板1起到绝缘、导热的作用，氧化铝陶瓷基板1反面的两块金属层通过Sb5Pb92.5Ag2.5焊料与散热板2烧结连接，氧化铝陶瓷基板1正面的两块金属层分别通过Sb5Pb92.5Ag2.5焊料与左侧引线11和右侧引线13烧结连接，两只肖特基二极管3通过常规的自动装片机在引线上自动粘片，其中两只肖特基二极管3的N极分别连接在左侧引线11和右侧引线13上，作为两个阴极，两只肖特基二极管3的P极分别通过铝线4连接在中间引线12上，作为共阳极，散热板2和引线均为电解铜材。
具体封装制造时，封装工艺流程如下：
1)在引线的基脚反面及散热板2上点上Sb5Pb92.5Ag2.5焊料；
2)分别将散热板2、氧化铝陶瓷基板1、引线依次组装在工装模里，其中氧化铝陶瓷基板1位于散热板2与引线之间；
3)将组装完成后的工装模送入符合Sb5Pb92.5Ag2.5焊料温度曲线的链式烧结炉烧结，然后取出；
4)将两只二极管3的N极通过常规的自动装片机在左侧引线11和右侧引线13的正面上自动粘片，然后将两只二极管3的P极分别通过铝线4连接在中间引线12上，最后塑封、镀锡、分粒、测试、检验、包装、入库。
综上所述，本发明提供一种工艺简单、制造难度低、良品率及可靠性稳定，且二极管的有效散热量高，与使用同规格二极管封装的共阴半桥器件能匹配使用的N基材二极管共阳半桥在TO-220中的封装结构。N基材二极管共阳半桥采用上述封装结构后，与使用同属性、同规格的N基材二极管封装的共阴半桥相比，实现了电性能、良品率、可靠性完全一致，从而解决了后道高频桥式整流电路设计时器件选用的难题。工艺简单、容易实施、良品率高达99％以上。N基材二极管共阳半桥采用上述封装结构后，与共阴半桥使用的二极管规格相同，从而使二极管制造工艺容易实施且工艺简单可靠、一致性好、成品合格率高、成本低，综合经济成本可降低约50％。
需要理解到的是：以上所述仅是本发明的优选实施方式，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (3)

1.N基材二极管共阳半桥在TO-220中的封装结构，其特征在于：包括一块绝缘导热的氧化铝陶瓷基板，所述氧化铝陶瓷基板的正面设置有两块相互独立的金属层，氧化铝陶瓷基板的反面设置有至少一块金属层，氧化铝陶瓷基板反面的金属层与散热板相连接，氧化铝陶瓷基板正面的两块金属层分别与左侧引线和右侧引线相连接，两只二极管的N极分别连接在左侧引线和右侧引线上，为两个阴极，两只二极管的P极分别通过铝线连接在中间引线上，为共阳极。
2.根据权利要求1所述的N基材二极管共阳半桥在TO-220中的封装结构，其特征在于：所述的二极管为肖特基二极管或快恢复二极管。
3.根据权利要求1所述的N基材二极管共阳半桥在TO-220中的封装结构，其特征在于：所述的氧化铝陶瓷基板反面的金属层与散热板之间通过Sb5Pb92.5Ag2.5焊料烧结连接，所述的氧化铝陶瓷基板正面的两块金属层与左侧引线和右侧引线之间均通过Sb5Pb92.5Ag2.5焊料烧结连接。
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* Cited by examiner, † Cited by third party
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CN105609483A (zh) * 2016-01-04 2016-05-25 重庆平伟实业股份有限公司 共阳极肖特基半导体的封装工艺
CN107425079A (zh) * 2017-09-15 2017-12-01 捷捷半导体有限公司 一种共阳极整流半桥芯片及其制备方法
CN112713094A (zh) * 2020-12-30 2021-04-27 无锡格能微电子有限公司 一种共阳极to封装的工艺加工方法

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CN105609483A (zh) * 2016-01-04 2016-05-25 重庆平伟实业股份有限公司 共阳极肖特基半导体的封装工艺
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