CN101950790B - 压电薄膜元件及其制造方法、以及压电薄膜设备 - Google Patents
压电薄膜元件及其制造方法、以及压电薄膜设备 Download PDFInfo
- Publication number
- CN101950790B CN101950790B CN201010224767.4A CN201010224767A CN101950790B CN 101950790 B CN101950790 B CN 101950790B CN 201010224767 A CN201010224767 A CN 201010224767A CN 101950790 B CN101950790 B CN 101950790B
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- CN
- China
- Prior art keywords
- piezoelectric
- aforementioned
- film
- knn
- type element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 15
- 239000012528 membrane Substances 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 229910052783 alkali metal Inorganic materials 0.000 claims description 11
- -1 alkali metal niobium oxide Chemical class 0.000 claims description 11
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000003513 alkali Substances 0.000 abstract 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 65
- 239000011734 sodium Substances 0.000 description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- 239000010410 layer Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000877463 Lanio Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 238000000205 computational method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2041—Beam type
- H10N30/2042—Cantilevers, i.e. having one fixed end
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-161465 | 2009-07-08 | ||
JP2009161465 | 2009-07-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101950790A CN101950790A (zh) | 2011-01-19 |
CN101950790B true CN101950790B (zh) | 2014-07-30 |
Family
ID=43426932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010224767.4A Active CN101950790B (zh) | 2009-07-08 | 2010-07-07 | 压电薄膜元件及其制造方法、以及压电薄膜设备 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8232708B2 (zh) |
JP (1) | JP5024399B2 (zh) |
CN (1) | CN101950790B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5382905B2 (ja) * | 2008-03-10 | 2014-01-08 | 富士フイルム株式会社 | 圧電素子の製造方法及び液体吐出ヘッドの製造方法 |
JP5515675B2 (ja) * | 2009-11-20 | 2014-06-11 | 日立金属株式会社 | 圧電薄膜素子及び圧電薄膜デバイス |
JP5556514B2 (ja) * | 2010-09-06 | 2014-07-23 | 日立金属株式会社 | 圧電体薄膜ウェハの製造方法、圧電体薄膜素子、及び圧電体薄膜デバイス |
US9172026B2 (en) * | 2012-03-02 | 2015-10-27 | Honda Electronics Co., Ltd. | Piezoceramic composition and method for manufacturing the same |
US10373611B2 (en) * | 2014-01-03 | 2019-08-06 | Gracenote, Inc. | Modification of electronic system operation based on acoustic ambience classification |
US9837596B2 (en) * | 2014-06-13 | 2017-12-05 | Tdk Corporation | Piezoelectric device, piezoelectric actuator, piezoelectric sensor, hard disk drive, and inkjet printer apparatus |
CN106486595B (zh) * | 2015-08-31 | 2020-06-23 | 精工爱普生株式会社 | 压电元件和压电元件应用设备 |
KR101925789B1 (ko) | 2016-06-10 | 2018-12-07 | 한국기계연구원 | Knn계 단결정 세라믹 제조 방법 및 이에 의해 제조된 knn계 단결정 세라믹 |
KR101855082B1 (ko) | 2016-06-22 | 2018-05-10 | 한국기계연구원 | Knn계 단결정 시드 제조 방법 |
US10161061B2 (en) * | 2016-06-10 | 2018-12-25 | Korea Institute Of Machinery And Materials | Potassium sodium niobate ceramics with single crystal |
JP2018133458A (ja) | 2017-02-15 | 2018-08-23 | セイコーエプソン株式会社 | 圧電素子、及び圧電素子応用デバイス |
WO2019059051A1 (ja) * | 2017-09-22 | 2019-03-28 | Tdk株式会社 | 圧電薄膜素子 |
JP7180492B2 (ja) * | 2019-03-26 | 2022-11-30 | Tdk株式会社 | 誘電体膜および電子部品 |
JP2021197494A (ja) | 2020-06-17 | 2021-12-27 | セイコーエプソン株式会社 | 圧電素子、圧電素子応用デバイス |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3666177B2 (ja) * | 1997-04-14 | 2005-06-29 | 松下電器産業株式会社 | インクジェット記録装置 |
US6385355B1 (en) * | 1999-03-15 | 2002-05-07 | Fuji Xerox Co., Ltd. | Optical deflection element |
JP4926389B2 (ja) * | 2004-06-17 | 2012-05-09 | 株式会社豊田中央研究所 | 結晶配向セラミックス、及びその製造方法 |
JP2007019302A (ja) | 2005-07-08 | 2007-01-25 | Hitachi Cable Ltd | 圧電薄膜素子及びそれを用いたアクチュエータ並びにセンサ |
JP5044902B2 (ja) * | 2005-08-01 | 2012-10-10 | 日立電線株式会社 | 圧電薄膜素子 |
JP5181649B2 (ja) * | 2007-09-18 | 2013-04-10 | 日立電線株式会社 | 圧電素子 |
JP5391395B2 (ja) * | 2007-10-15 | 2014-01-15 | 日立金属株式会社 | 圧電薄膜付き基板及び圧電素子 |
JP2009114037A (ja) * | 2007-11-08 | 2009-05-28 | Denso Corp | 結晶配向セラミックスの製造方法 |
JP5525143B2 (ja) * | 2008-06-05 | 2014-06-18 | 日立金属株式会社 | 圧電薄膜素子及び圧電薄膜デバイス |
-
2010
- 2010-02-12 JP JP2010028666A patent/JP5024399B2/ja active Active
- 2010-06-16 US US12/816,848 patent/US8232708B2/en active Active
- 2010-07-07 CN CN201010224767.4A patent/CN101950790B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP5024399B2 (ja) | 2012-09-12 |
JP2011035370A (ja) | 2011-02-17 |
CN101950790A (zh) | 2011-01-19 |
US20110006643A1 (en) | 2011-01-13 |
US8232708B2 (en) | 2012-07-31 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
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ASS | Succession or assignment of patent right |
Owner name: HITACHI METALS, LTD. Free format text: FORMER OWNER: HITACHI CABLE CO., LTD. Effective date: 20140414 |
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Effective date of registration: 20140414 Address after: Tokyo, Japan, Japan Applicant after: Hitachi Metals Co., Ltd. Address before: Tokyo, Japan, Japan Applicant before: Hitachi Cable Co., Ltd. |
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Owner name: SCIOCS COMPANY LIMITED Free format text: FORMER OWNER: HITACHI METALS, LTD. Effective date: 20150814 |
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Effective date of registration: 20150814 Address after: Ibaraki Patentee after: Hitachi Cable Address before: Tokyo, Japan, Japan Patentee before: Hitachi Metals Co., Ltd. |
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Effective date of registration: 20160223 Address after: Tokyo, Japan, Japan Patentee after: Sumitomo Chemical Co., Ltd. Address before: Ibaraki Patentee before: Hitachi Cable |