CN101755304B - 用于执行突发写操作的同步存储器装置和控制方法 - Google Patents
用于执行突发写操作的同步存储器装置和控制方法 Download PDFInfo
- Publication number
- CN101755304B CN101755304B CN2008800252325A CN200880025232A CN101755304B CN 101755304 B CN101755304 B CN 101755304B CN 2008800252325 A CN2008800252325 A CN 2008800252325A CN 200880025232 A CN200880025232 A CN 200880025232A CN 101755304 B CN101755304 B CN 101755304B
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- Prior art keywords
- write operations
- burst write
- signal
- flip
- circuit
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- 230000001360 synchronised effect Effects 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000003139 buffering effect Effects 0.000 claims abstract description 21
- 230000004044 response Effects 0.000 claims abstract description 12
- 230000004913 activation Effects 0.000 claims description 45
- 230000008569 process Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 11
- 230000000630 rising effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/109—Control signal input circuits
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- Static Random-Access Memory (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007187763A JP2009026370A (ja) | 2007-07-19 | 2007-07-19 | 同期型記憶装置及びその制御方法 |
JP187763/2007 | 2007-07-19 | ||
PCT/US2008/008864 WO2009014678A1 (en) | 2007-07-19 | 2008-07-21 | Synchronous memory devices and control methods for performing burst write operations |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101755304A CN101755304A (zh) | 2010-06-23 |
CN101755304B true CN101755304B (zh) | 2013-03-13 |
Family
ID=40032431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800252325A Active CN101755304B (zh) | 2007-07-19 | 2008-07-21 | 用于执行突发写操作的同步存储器装置和控制方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7821842B2 (zh) |
EP (1) | EP2171719B1 (zh) |
JP (1) | JP2009026370A (zh) |
KR (1) | KR101205589B1 (zh) |
CN (1) | CN101755304B (zh) |
TW (1) | TWI407449B (zh) |
WO (1) | WO2009014678A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8552765B2 (en) * | 2011-01-07 | 2013-10-08 | Stmicroelectronics International N.V. | Adaptive multi-stage slack borrowing for high performance error resilient computing |
JP4988048B1 (ja) | 2011-02-14 | 2012-08-01 | 株式会社東芝 | 半導体記憶装置 |
US9444440B2 (en) * | 2011-06-30 | 2016-09-13 | Stmicroelectronics International N.V. | Transition detector |
CN112202446B (zh) * | 2019-07-08 | 2024-06-14 | 北京三中科技有限公司 | 一种相位同步装置和方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970001699B1 (ko) | 1994-03-03 | 1997-02-13 | 삼성전자 주식회사 | 자동프리차아지기능을 가진 동기식 반도체메모리장치 |
JP3843145B2 (ja) * | 1995-12-25 | 2006-11-08 | 株式会社ルネサステクノロジ | 同期型半導体記憶装置 |
JP3708729B2 (ja) * | 1998-11-18 | 2005-10-19 | 富士通株式会社 | 半導体記憶装置 |
IT1318978B1 (it) * | 2000-10-06 | 2003-09-19 | St Microelectronics Srl | Struttura di controllo e temporizzazione per una memoria |
JP3959341B2 (ja) * | 2002-02-18 | 2007-08-15 | 株式会社東芝 | 半導体集積回路装置 |
JP2004212749A (ja) | 2003-01-07 | 2004-07-29 | Hitachi Ltd | 表示装置及びその駆動方法 |
JP4492938B2 (ja) * | 2004-05-26 | 2010-06-30 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置及びその動作方法 |
JP4216778B2 (ja) * | 2004-07-12 | 2009-01-28 | 株式会社ルネサステクノロジ | 半導体装置 |
JP4830495B2 (ja) | 2006-01-11 | 2011-12-07 | ソニー株式会社 | 自発光表示装置、変換テーブル更新装置及びプログラム |
-
2007
- 2007-07-19 JP JP2007187763A patent/JP2009026370A/ja active Pending
-
2008
- 2008-06-12 TW TW097121850A patent/TWI407449B/zh not_active IP Right Cessation
- 2008-07-21 US US12/176,997 patent/US7821842B2/en active Active
- 2008-07-21 EP EP08780275.7A patent/EP2171719B1/en active Active
- 2008-07-21 WO PCT/US2008/008864 patent/WO2009014678A1/en active Application Filing
- 2008-07-21 KR KR1020107001158A patent/KR101205589B1/ko active IP Right Grant
- 2008-07-21 CN CN2008800252325A patent/CN101755304B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TWI407449B (zh) | 2013-09-01 |
US7821842B2 (en) | 2010-10-26 |
EP2171719B1 (en) | 2019-01-23 |
US20090207672A1 (en) | 2009-08-20 |
KR20100034014A (ko) | 2010-03-31 |
CN101755304A (zh) | 2010-06-23 |
JP2009026370A (ja) | 2009-02-05 |
WO2009014678A1 (en) | 2009-01-29 |
TW200912953A (en) | 2009-03-16 |
KR101205589B1 (ko) | 2012-11-27 |
EP2171719A1 (en) | 2010-04-07 |
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Effective date of registration: 20160408 Address after: California, USA Patentee after: CYPRESS SEMICONDUCTOR Corp. Address before: California, USA Patentee before: SPANSION LLC |
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Effective date of registration: 20220624 Address after: California, USA Patentee after: Infineon Technology Co.,Ltd. Address before: California, USA Patentee before: CYPRESS SEMICONDUCTOR Corp. |
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