CN101685317A - 带隙基准电压电路 - Google Patents
带隙基准电压电路 Download PDFInfo
- Publication number
- CN101685317A CN101685317A CN200910175533A CN200910175533A CN101685317A CN 101685317 A CN101685317 A CN 101685317A CN 200910175533 A CN200910175533 A CN 200910175533A CN 200910175533 A CN200910175533 A CN 200910175533A CN 101685317 A CN101685317 A CN 101685317A
- Authority
- CN
- China
- Prior art keywords
- voltage
- mos transistor
- conductivity type
- type mos
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010586 diagram Methods 0.000 description 9
- 239000002800 charge carrier Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008242862 | 2008-09-22 | ||
JP2008-242862 | 2008-09-22 | ||
JP2008242862A JP5285371B2 (ja) | 2008-09-22 | 2008-09-22 | バンドギャップ基準電圧回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101685317A true CN101685317A (zh) | 2010-03-31 |
CN101685317B CN101685317B (zh) | 2013-03-20 |
Family
ID=42036963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101755332A Expired - Fee Related CN101685317B (zh) | 2008-09-22 | 2009-09-22 | 带隙基准电压电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7990130B2 (zh) |
JP (1) | JP5285371B2 (zh) |
KR (1) | KR101353199B1 (zh) |
CN (1) | CN101685317B (zh) |
TW (1) | TWI464556B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102385407A (zh) * | 2011-09-21 | 2012-03-21 | 电子科技大学 | 一种带隙基准电压源 |
CN102692946A (zh) * | 2012-06-15 | 2012-09-26 | 钜泉光电科技(上海)股份有限公司 | 电流基准电路 |
CN105320205A (zh) * | 2014-07-30 | 2016-02-10 | 国家电网公司 | 一种具有低失调电压高psrr的带隙基准源 |
CN105320198A (zh) * | 2014-06-26 | 2016-02-10 | 北京南瑞智芯微电子科技有限公司 | 一种低功耗高psrr带隙基准源 |
CN106055008A (zh) * | 2016-06-15 | 2016-10-26 | 泰凌微电子(上海)有限公司 | 电流偏置电路及提高正温度系数的方法 |
CN110022447A (zh) * | 2017-12-22 | 2019-07-16 | 豪威科技股份有限公司 | 成像***、输出线电路及其快速稳定的方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8575998B2 (en) * | 2009-07-02 | 2013-11-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Voltage reference circuit with temperature compensation |
JP5554134B2 (ja) * | 2010-04-27 | 2014-07-23 | ローム株式会社 | 電流生成回路およびそれを用いた基準電圧回路 |
CN102999080B (zh) * | 2011-09-16 | 2014-09-03 | 晶宏半导体股份有限公司 | 能隙参考电压电路 |
TWI447555B (zh) * | 2011-10-26 | 2014-08-01 | Silicon Motion Inc | 帶隙參考電壓產生電路 |
KR101917187B1 (ko) * | 2012-05-04 | 2018-11-09 | 에스케이하이닉스 주식회사 | 기준전압 발생기 |
KR101944359B1 (ko) * | 2012-12-06 | 2019-01-31 | 한국전자통신연구원 | 밴드갭 기준전압 발생기 |
US9632521B2 (en) * | 2013-03-13 | 2017-04-25 | Analog Devices Global | Voltage generator, a method of generating a voltage and a power-up reset circuit |
US9525407B2 (en) | 2013-03-13 | 2016-12-20 | Analog Devices Global | Power monitoring circuit, and a power up reset generator |
KR20160062491A (ko) * | 2014-11-25 | 2016-06-02 | 에스케이하이닉스 주식회사 | 온도 센서 |
KR102347178B1 (ko) * | 2017-07-19 | 2022-01-04 | 삼성전자주식회사 | 기준 전압 회로를 포함하는 단말 장치 |
KR20190029244A (ko) | 2017-09-12 | 2019-03-20 | 삼성전자주식회사 | 밴드 갭 기준 전압 생성 회로 및 밴드 갭 기준 전압 생성 시스템 |
JP7086562B2 (ja) * | 2017-10-31 | 2022-06-20 | シナプティクス インコーポレイテッド | バンドギャップリファレンス回路 |
US10374647B1 (en) * | 2018-02-13 | 2019-08-06 | Texas Instruments Incorporated | Adjustable dynamic range signal detection circuit |
US10642304B1 (en) * | 2018-11-05 | 2020-05-05 | Texas Instruments Incorporated | Low voltage ultra-low power continuous time reverse bandgap reference circuit |
JP7479765B2 (ja) | 2020-08-21 | 2024-05-09 | エイブリック株式会社 | 基準電圧回路 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04106606A (ja) * | 1990-08-27 | 1992-04-08 | Mitsubishi Electric Corp | 基準電圧源回路 |
JP3517343B2 (ja) * | 1998-01-05 | 2004-04-12 | セイコーインスツルメンツ株式会社 | 自己補正型定電流回路 |
JP3519958B2 (ja) * | 1998-10-07 | 2004-04-19 | 株式会社リコー | 基準電圧発生回路 |
JP2002318626A (ja) * | 2001-04-23 | 2002-10-31 | Ricoh Co Ltd | 定電圧回路 |
JP2003078366A (ja) * | 2001-09-04 | 2003-03-14 | Toyama Prefecture | Mos型基準電圧発生回路 |
JP4301760B2 (ja) * | 2002-02-26 | 2009-07-22 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2003258105A (ja) * | 2002-02-27 | 2003-09-12 | Ricoh Co Ltd | 基準電圧発生回路及びその製造方法、並びにそれを用いた電源装置 |
KR100542708B1 (ko) * | 2003-05-28 | 2006-01-11 | 주식회사 하이닉스반도체 | 고전압 발생기 |
JP2005128939A (ja) * | 2003-10-27 | 2005-05-19 | Fujitsu Ltd | 半導体集積回路 |
US7161340B2 (en) * | 2004-07-12 | 2007-01-09 | Realtek Semiconductor Corp. | Method and apparatus for generating N-order compensated temperature independent reference voltage |
JP4785538B2 (ja) * | 2006-01-20 | 2011-10-05 | セイコーインスツル株式会社 | バンドギャップ回路 |
CN101266506B (zh) * | 2007-03-16 | 2010-12-01 | 深圳赛意法微电子有限公司 | Cmos工艺中无运算放大器的带隙基准电压源 |
KR101358930B1 (ko) * | 2007-07-23 | 2014-02-05 | 삼성전자주식회사 | 전압 디바이더 및 이를 포함하는 내부 전원 전압 발생 회로 |
-
2008
- 2008-09-22 JP JP2008242862A patent/JP5285371B2/ja not_active Expired - Fee Related
-
2009
- 2009-09-10 TW TW098130556A patent/TWI464556B/zh not_active IP Right Cessation
- 2009-09-18 US US12/562,471 patent/US7990130B2/en not_active Expired - Fee Related
- 2009-09-21 KR KR1020090088907A patent/KR101353199B1/ko active IP Right Grant
- 2009-09-22 CN CN2009101755332A patent/CN101685317B/zh not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102385407A (zh) * | 2011-09-21 | 2012-03-21 | 电子科技大学 | 一种带隙基准电压源 |
CN102385407B (zh) * | 2011-09-21 | 2013-06-12 | 电子科技大学 | 一种带隙基准电压源 |
CN102692946A (zh) * | 2012-06-15 | 2012-09-26 | 钜泉光电科技(上海)股份有限公司 | 电流基准电路 |
CN102692946B (zh) * | 2012-06-15 | 2014-07-30 | 钜泉光电科技(上海)股份有限公司 | 电流基准电路 |
CN105320198A (zh) * | 2014-06-26 | 2016-02-10 | 北京南瑞智芯微电子科技有限公司 | 一种低功耗高psrr带隙基准源 |
CN105320198B (zh) * | 2014-06-26 | 2017-08-01 | 北京南瑞智芯微电子科技有限公司 | 一种低功耗高psrr带隙基准源 |
CN105320205A (zh) * | 2014-07-30 | 2016-02-10 | 国家电网公司 | 一种具有低失调电压高psrr的带隙基准源 |
CN106055008A (zh) * | 2016-06-15 | 2016-10-26 | 泰凌微电子(上海)有限公司 | 电流偏置电路及提高正温度系数的方法 |
CN110022447A (zh) * | 2017-12-22 | 2019-07-16 | 豪威科技股份有限公司 | 成像***、输出线电路及其快速稳定的方法 |
CN110022447B (zh) * | 2017-12-22 | 2020-05-12 | 豪威科技股份有限公司 | 成像***、输出线电路及其快速稳定的方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI464556B (zh) | 2014-12-11 |
CN101685317B (zh) | 2013-03-20 |
KR101353199B1 (ko) | 2014-01-17 |
TW201015266A (en) | 2010-04-16 |
US20100072972A1 (en) | 2010-03-25 |
JP2010073133A (ja) | 2010-04-02 |
KR20100033940A (ko) | 2010-03-31 |
US7990130B2 (en) | 2011-08-02 |
JP5285371B2 (ja) | 2013-09-11 |
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Effective date of registration: 20160311 Address after: Chiba County, Japan Patentee after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba County, Japan Patentee before: Seiko Instruments Inc. |
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