CN101626674B - Radiating structure and preparation method thereof - Google Patents
Radiating structure and preparation method thereof Download PDFInfo
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- CN101626674B CN101626674B CN200810068460.2A CN200810068460A CN101626674B CN 101626674 B CN101626674 B CN 101626674B CN 200810068460 A CN200810068460 A CN 200810068460A CN 101626674 B CN101626674 B CN 101626674B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F2013/005—Thermal joints
- F28F2013/006—Heat conductive materials
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/02—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
- F28F3/022—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations the means being wires or pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
Abstract
A radiating structure is fixedly arranged on the surface of a heating element. The radiating structure comprises a patterned carbon nanotube array and a fixing layer, and is fixed on the heating element through the fixing layer. The patterned carbon nanotube array includes a plurality of carbon nanotubes of which the length exposing the fixing layer is different so as to form a pre-determined pattern. A preparation method for the radiating structure comprises the following steps: providing the heating element which has a surface; arranging the molten fixing layer on the surface of the heating element; preparing the carbon nanotube array to form on a substrate, wherein the carbon nanotube array has a first end and a second end, and the second end is opposite to the first end and is connected with the substrate; inserting the first end of the carbon nanotube array into the fixing layer and cooling the fixing layer until the fixing layer is solidified; removing the substrate of the carbon nanotube array; and patterning the carbon nanotube array to form the radiating structure on the surface of the heating element.
Description
Technical field
The present invention relates to a kind of radiator structure and preparation method thereof, particularly relate to a kind of radiator structure based on carbon nano-tube and preparation method thereof.
Background technology
In recent years, along with the fast development of semiconductor device integrated technique, the integration degree of semiconductor device is more and more higher, the running frequency of semiconductor integrated device (as CPU) is also more and more higher, the heat produced in its unit interval increases, the accumulation of heat will cause the rising of temperature, thus cause the runnability of semiconductor integrated device to comprise stability decline, therefore, the heat that must be produced in time distributes, at present, heat radiation has become the problem that must solve in semiconductor integrated technique.
Along with the reduction of device volume, it is to the raising of radiating requirements, and device heat radiation has become an important problem.Refer to Fig. 1, the radiator structure 100 being applied to device heat radiation at present generally includes radiator 102 and a thermal interface material layer 104.The radiating fin 108 that this radiator 102 comprises a matrix 106 and is arranged on this matrix 106 surface.This thermal interface material layer 104 is arranged on the matrix 106 of radiator 102 surface relative with radiating fin 108 usually, for increasing the area of dissipation between radiator structure 100 and semiconductor device, improves the heat transfer effect of semiconductor device and radiator structure 100.Tradition thermal interfacial material is the composite material formed in polymeric matrix by Granular composite higher for conductive coefficient, and the material that conductive coefficient is higher comprises graphite, boron nitride, silica, aluminium oxide, silver or other metal etc.The common defects of such composite material is that overall material conductive coefficient is less, and representative value is 1W/mK, and this raising that can not adapt to semiconductor integrated degree is to the demand of heat radiation.And, by the existence of thermal interface material layer, the volume of this radiator structure is restricted, is difficult to the demand meeting tiny semiconductor device.Separately, the material of traditional radiating fin often adopt metal, metal alloy or conductive coefficient higher the composite material that formed in polymeric matrix of Granular composite, radiating fin prepared by these materials also exists the less shortcoming of conductive coefficient equally, is difficult to meet the raising of semiconductor integrated degree to the demand of heat radiation.
1991, Japanese Scientists Iijima found carbon nano-tube (referring to " Helical microtubules of graphitic carbon ", Nature, Sumio Iijima, vol354, p56 (1991)) in arc discharge test.Because carbon nano-tube has draw ratio greatly, length can be several thousand times of diameter; Intensity is high, be 100 times of steel, but weight only has 1/6th of steel; Toughness and the splendid characteristic of elasticity, and carbon nano-tube has high thermal conductivity coefficient along its longitudinal direction, becomes one of thermal interfacial material of most potentiality.Article AIP delivering one section by name " the remarkable thermal conductance of carbon nano-tube " point out for " Z " font (10,10) carbon nano-tube at room temperature its conductive coefficient can reach 6600W/mK.This character of carbon nano-tube makes to have vast potential for future development in the application in its radiator structure in semiconductor integrated device, becomes the study hotspot of people.
In prior art, when carbon nano-tube is applied in radiator structure, normally using the composite material of carbon nano-tube itself or carbon nano-tube as thermal interface material applications.But because carbon nano-tube is generally lack of alignment in thermal interfacial material, fail to make full use of the advantage of the longitudinal heat conduction of carbon nano-tube, therefore, the radiating efficiency of this radiator structure is not improved significantly.Meanwhile, because this radiator structure needs to comprise thermal interfacial material and radiator equally simultaneously, the volume of radiator structure is restricted, and cannot meet the requirement of micro devices.
Therefore, necessaryly provide a kind of radiator structure and preparation method thereof, this radiator structure radiating efficiency is high, and volume is little, can conveniently be applied to various field.
Summary of the invention
A kind of radiator structure, this radiator structure is fixedly installed on a heater element surface, wherein, this radiator structure comprises a patterned carbon nano pipe array and a fixed bed, this radiator structure is fixed on this heater element by this fixed bed, and the fusing point of this heater element is higher than the fusing point of this fixed bed, and described patterned carbon nano pipe array comprises multiple carbon nano-tube, the length that the plurality of carbon nano-tube exposes fixed bed is unequal, forms predetermined pattern.
A preparation method for radiator structure, it comprises the following steps: provide a heater element, and this heater element has a surface; Arrange a molten fixing layer in the surface of heater element, the fusing point of this heater element is higher than the fusing point of this fixed bed; Prepare a carbon nano pipe array and be formed at a substrate, this carbon nano pipe array has a first end and second end relative with first end, and the second end is connected with substrate; The first end of above-mentioned carbon nano pipe array is inserted in this fixed bed, cools this fixed bed and solidify to it; The substrate of removing carbon nano pipe array; And carbon nano pipe array is graphical, the surface of heater element is formed a radiator structure.
Relative to prior art, there is following advantage in the radiator structure that the technical program provides: one, and this radiator structure is directly fixed on heater element, and without the need to thermal interfacial material, small volume, can conveniently be applied to various field; Its two, the carbon nano-tube in this radiator structure exists in the form of an array, takes full advantage of longitudinal heat conductivility of carbon nano-tube, and therefore, the radiating efficiency of this radiator structure is high.
Accompanying drawing explanation
Fig. 1 is the structural representation of radiator structure of the prior art.
The generalized section being arranged at the radiator structure on heater element that Fig. 2 provides for the technical program embodiment.
Fig. 3 is the vertical view of Fig. 2.
The flow chart of the preparation method of the radiator structure that Fig. 4 provides for the technical program embodiment.
Preparation technology's flow chart of the radiator structure that Fig. 5 provides for the technical program embodiment.
Embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings and the specific embodiments.
Refer to Fig. 2, the technical program provides a kind of radiator structure 10, and this radiator structure 10 is arranged at the surface 18 of a heater element 12.This radiator structure 10 comprises patterned carbon nano pipe array 16 and a fixed bed 14.Patterned carbon nano pipe array 16 comprises a first end 162 and second end 164 relative with first end 162.The first end 162 of patterned carbon nano pipe array 16 is arranged in fixed bed 14, and making patterned carbon nano pipe array 16 be fixed on the surface 18 of heater element 12 by fixed bed 14, the second end 164 of patterned carbon nano pipe array 16 extends to the direction away from fixed bed 14.Be appreciated that the first end 162 of patterned carbon nano pipe array 16 also can penetrate fixed bed 14 and directly contact with heater element 12, improve radiating efficiency.
The material of described fixed bed 14 is Heat Conduction Material, comprises the metal of composite material or low melting point.Described composite material comprises conducting polymer composite material, conductivity ceramics composite material or other conducing composite materials, as the plastics containing carbon nano-tube.Described low-melting-point metal comprises alloy or the mixture of tin, indium, lead, antimony, silver, bismuth and its combination in any, as leypewter, indium stannum alloy, sn-ag alloy etc.The thickness of described fixed bed 14 should not be too thick, also should not be too thin, too thick, be unfavorable for the heat dispersion of the carbon nano-tube made full use of in carbon nano pipe array 16, too thin, its bed knife to patterned carbon nano pipe array 16 can be reduced, cause toppling over of carbon nano pipe array 16.Preferably, the thickness of described fixed bed 14 is 0.1 millimeter-1 millimeter.
Described patterned carbon nano pipe array 16 comprises multiple carbon nano-tube be arranged in parallel, and carbon nano-tube extends along the direction of first end 162 to the second end 164 of patterned carbon nano pipe array 16, and carbon nano-tube is substantially perpendicular to the surface 18 of fixed bed 14.Because the first end 162 of patterned carbon nano pipe array 16 is arranged in fixed bed, therefore, carbon nano-tube is arranged in fixed bed 14 at least partly, and carbon nano-tube is exposed to part outside fixed bed 14 as radiating fin, is distributed by the heat that heater element 12 produces.Described patterned carbon nano pipe array 16 can according to the figure needing formation predetermined of heater element 12, the formation of described predetermined pattern comprises following three kinds of situations: one, the carbon nano-tube part exposing fixed bed 14 in described patterned carbon nano pipe array 16 is removed, the length that remaining carbon nano-tube exposes the part of fixed bed 14 is equal, form predetermined planar graph, as circle, cross, annular etc.; Its two, the length of carbon nanotube exposing fixed bed 14 in described patterned carbon nano pipe array 16 is different, forms predetermined solid figure; Its three, the part that in described patterned carbon nano pipe array 16, a part of carbon nano-tube exposes fixed bed 14 is removed, and the length that remaining carbon nano-tube exposes the part of fixed bed 14 is unequal, forms predetermined pattern.In this enforcement profit, the part that in patterned carbon nano pipe array 16, a part of carbon nano-tube exposes fixed bed 14 is removed, and the length that remaining carbon nano-tube exposes the part of fixed bed 14 is equal, forms " ten " word passage as shown in Figure 3.When applying, this patterned carbon nano pipe array 16 can increase cross-ventilation, is conducive to improving radiating efficiency.The length of the middle carbon nano-tube of described graphing carbon nanotube array 16 is greater than the thickness of fixed bed 14.Preferably, in patterned carbon nano pipe array 16, the length of carbon nano-tube is 0.5 millimeter-5 millimeters, in the present embodiment, and in graphing carbon nanotube array 16, the length of carbon nano-tube is 1 millimeter.Carbon nano-tube in described patterned carbon nano pipe array 16 is Single Walled Carbon Nanotube, double-walled carbon nano-tube, multi-walled carbon nano-tubes or its combination in any.The diameter of this Single Walled Carbon Nanotube is 0.5 nanometer-100 nanometer, and the diameter of this double-walled carbon nano-tube is 1.0 nanometer-100 nanometers, and the diameter of this multi-walled carbon nano-tubes is 1.5 nanometer-100 nanometers.Distance between carbon nano-tube in described patterned carbon nano pipe array 16 is 0.1 nanometer-5 nanometer.
The concrete shape of described heater element 12 is not limit, and it has a surface 18 and can be used for arranging fixed bed 14, and this surface 18 can be a plane, also can be convex surface, concave surface or tungued-and-grooved face.The fusing point on the surface 18 of heater element 12 should higher than the fusing point of fixed bed 14, to guarantee that this radiator structure 10 can not damage heater element when being formed on heater element 12.Heater element 12 can be any heater element, comprises microdevice or large-scale device, and preferably, heater element 12 is microdevice.
Refer to Fig. 4 and Fig. 5, the technical program embodiment provides a kind of preparation method preparing above-mentioned radiator structure 10, and it specifically comprises the following steps:
Step one, provide a heater element 12, this heater element 12 has a surface 18.
The concrete shape of described heater element 12 is not limit, and it has a surface 18 and can be used for arranging fixed bed 14.The fusing point on heater element 12 surface 18 should higher than the fusing point of fixed bed, with guarantee this radiator structure 10 in Xiangcheng on heater element 12 time can not damage heater element.In the present embodiment, described heater element 12 is chip used in integrated circuit.
Step 2, form the surface 18 of fixed bed 14 in heater element 12 of a molten state.
The surface 18 fixed bed material of molten state being arranged at heater element 12 by modes such as coating, printings forms a fixed bed 14, and the material of described fixed bed 14 is Heat Conduction Material, and its concrete material is not limit, and can be the metal of low melting point.Described low-melting-point metal comprises alloy or the mixture of tin, indium, lead, antimony, silver, bismuth and aforementioned each material, and as leypewter, indium stannum alloy, SAC etc., in the present embodiment, fixed bed material is preferably metallic tin.
Step 3, prepare a carbon nano pipe array 22 and be formed at a substrate 20, this carbon nano pipe array has a first end and second end relative with first end, and the second end is connected with substrate 20.
The concrete preparation method of this carbon nano pipe array 22 does not limit, in the technical program embodiment, the preparation method of carbon nano pipe array adopts chemical vapour deposition technique, it specifically comprises the following steps: (a) provides a smooth substrate 20, this substrate 20 selectable from glass, silicon, silicon dioxide, metal or metal oxide, the technical program embodiment is preferably and adopts silicon dioxide substrate; B () forms a catalyst layer at substrate 20 surface uniform, this catalyst layer material can select one of alloy of iron (Fe), cobalt (Co), nickel (Ni) or its combination in any; C the above-mentioned substrate 20 being formed with catalyst layer is annealed about 30 minutes-90 minutes by () in the air of 700 DEG C-900 DEG C; D the substrate 20 processed is placed in reacting furnace by (), be heated to 500 DEG C-740 DEG C under protective gas, and then pass into carbon-source gas reaction about 5 minutes-30 minutes, growth obtains carbon nano pipe array.This carbon nano-pipe array be classified as multiple parallel to each other and perpendicular to substrate 20 grow carbon nano-tube formed carbon nano pipe array 22.This carbon nano pipe array 22 comprises a first end and second end relative with first end, and the second end is connected with substrate 20, and be fixed in substrate 20, described carbon nano-tube extends from first end to the second end in carbon nano pipe array 22.
The hydrocarbon that in the technical program embodiment, carbon source gas can select the chemical property such as acetylene, ethene, methane more active, the preferred carbon source gas of the technical program embodiment is acetylene; Protective gas is nitrogen or inert gas, and the preferred protective gas of the technical program embodiment is argon gas.
Be appreciated that the carbon nano pipe array that the technical program embodiment provides is not limited to above-mentioned preparation method, also can be graphite electrode Constant Electric Current arc discharge sedimentation, laser evaporation sedimentation etc.
Step 4, the first end of above-mentioned carbon nano pipe array 22 to be inserted in the fixed bed 14 of this molten state, cool this fixed bed 14 and solidify to it.
After the first end of carbon nano pipe array 22 is reversed, in the fixed bed 14 of slow insertion molten state, the degree of depth that carbon nano pipe array 22 inserts in fixed bed 14 is not limit, and can adjust according to actual conditions, and carbon nano pipe array 22 can penetrate fixed bed 14 and directly contact with the surface of heater element 12.
Insert smoothly in fixed bed 14 for making carbon nano pipe array 22, before carbon nano pipe array 22 inserts fixed bed 14, fixed bed 14 should keep certain temperature, it is made to be in molten state, when being inserted after in fixed bed 14 by carbon nano pipe array 22, at room temperature cool this molten fixing layer 14, after layer 14 to be fixed solidifies, the first end of carbon nano pipe array 22 is fixed in fixed bed 14, and the carbon nano-tube in carbon nano pipe array 22 is fixed on heater element 12 by this fixed bed 14.In carbon nano pipe array 22, surface 18 angulation of carbon nano-tube and heater element 12 is 90 degree.
The substrate 20 of step 5, removing carbon nano pipe array 22.
Adopt the substrate 20 of the method such as mechanical lapping, chemical etching removing carbon nano pipe array 22, in the present embodiment, adopt the method for chemical etching substrate 20 to be removed.It specifically comprises the following steps:
First, provide the corrosive liquid of a solubilized substrate, in the present embodiment, the substrate 20 of carbon nano pipe array 22 is silicon dioxide, and corrosive liquid selects hydrochloric acid solution.
Secondly, the substrate 20 of carbon nano pipe array 22 is immersed in this corrosive liquid and soak 30 minutes-1 hour.In the present embodiment, material due to substrate 20 is silicon dioxide, catalyst material in carbon nano pipe array 22 is metal, therefore, in this immersion process, the substrate 20 of carbon nano pipe array 22 in this acid solution, thus removes by substrate 20 and catalyst dissolution, second end of carbon nano pipe array 22 and substrate 20 are departed from, is exposed in air.
Selectively, finally, the first end of organic appearance agent washing such as alcohol, acetone carbon nano pipe array 22 can be adopted.
Step 6, carbon nano pipe array 22 is graphical, form radiator structure 10 on the surface 18 of heater element 12.
In the present embodiment, be adopt the laser beam of 1-100000 watt/square millimeter to irradiate carbon nano pipe array 22 with the speed of 800-1500 mm/second according to the path forming predetermined figure by patterned for carbon nano pipe array 22 method, in carbon nano pipe array 22, form predetermined figure.
The method on the surface of described employing laser beam irradiation carbon nano pipe array 22 specifically comprises the following steps:
First, provide a laser, the exposure pathways of the laser beam of this laser controls by computer program, and in the present embodiment, described laser is carbon dioxide laser.
Secondly, the required pattern formed in carbon nano pipe array 22 is determined, in input computer program, the laser beam controlled in laser irradiates along the path that can form this pattern, by the mode of predefined pattern, mass preparation can be realized, be conducive to industrialization and produce.
Finally, open laser, make the laser beam of certain power with certain speed from the part carbon nano-tube front direct irradiation carbon nano pipe array 22, form patterned carbon nano pipe array 16.After laser irradiates, because the high-energy of laser is absorbed by carbon nano-tube, the high temperature produced is ablated off being in the carbon nano-tube of laser exposure pathways everywhere outside fixed bed 14 by laser is all or part of, thus predetermined figure is formed in carbon nano pipe array 22, form patterned carbon nano pipe array 16.Patterned carbon nano pipe array 16 comprises a first end 162 and second end 164 relative with first end 162.The first end 162 of patterned carbon nano pipe array 16 is arranged in fixed bed 14, and making patterned carbon nano pipe array 16 be fixed on the surface 18 of heater element 12 by fixed bed 14, the second end 164 of patterned carbon nano pipe array 16 extends to the direction away from fixed bed 14.
In the present embodiment, the power density of laser beam is 70000-80000 watt/square millimeter, and sweep speed is 1000-1200 mm/second.Above-mentioned laser beam power density and sweep speed are comparatively large, can in the moment etching carbon nano-tube of laser beam irradiation carbon nano-tube, and can not damage fixed bed 14, therefore, the fusing point of the material of this radiator structure 10 pairs of fixed beds 14 is without particular/special requirement.
Being appreciated that in the technical program can also fixed laser bundle, is controlled and the motion path of mobile carbon nano pipe array 22, the required pattern of etching in carbon nano pipe array 22 by computer program.
Meet radiator structure 10 in many-sided application and requirement by patterned for carbon nano pipe array 22 object, as increase radiator structure 10 ventilation, make full use of heat-dissipating space etc.
Above-mentioned radiator structure 10 is when applying, when the temperature of heater element 12 increases, heater element 12 produces heat, because the first end 162 of patterned carbon nano pipe array 16 is arranged in fixed bed, heat passes to patterned carbon nano pipe array 16 by fixed bed 14, is distributed by the heat that heater element 12 produces.
There is following advantage in the radiator structure that the technical program provides: one, and this radiator structure is directly fixed on heater element, and without the need to the combination of thermal interfacial material and radiator, small volume, can conveniently be applied to various field; Its two, the carbon nano-tube in this radiator structure exists in the form of an array, and the carbon nano-tube in this carbon nano pipe array is perpendicular to the surface of fixed bed, and take full advantage of longitudinal heat conductivility of carbon nano-tube, therefore, the radiating efficiency of this radiator structure is high; They are three years old, carbon nano-tube in this radiator structure is as radiating fin, because the diameter of carbon nano-tube is very little, be generally a few nanometer to tens nanometers, Single Carbon Nanotubes radiating fin is made to have great draw ratio, considerably increase the area of dissipation of described radiator structure, improve the radiating efficiency of radiator structure; Its four, because the fixed bed in radiator structure directly contacts with heater element with molten state, can realize abundant contact, add area of dissipation, therefore, the radiating efficiency of this radiator structure is high.
In addition, those skilled in the art also can do other changes in spirit of the present invention, and certainly, these changes done according to the present invention's spirit, all should be included within the present invention's scope required for protection.
Claims (15)
1. a radiator structure, this radiator structure is fixedly installed on a heater element surface, it is characterized in that, this radiator structure comprises a patterned carbon nano pipe array and a fixed bed, this patterned carbon nano pipe array to be fixed on this heater element by this fixed bed and directly to contact with this heater element, the material of this fixed bed is the alloy of tin, indium, lead, antimony, silver, bismuth or its combination in any, described patterned carbon nano pipe array comprises multiple carbon nano-tube, the length that the plurality of carbon nano-tube exposes fixed bed is unequal, forms predetermined pattern.
2. radiator structure as claimed in claim 1, it is characterized in that, described patterned carbon nano pipe array comprises a first end and second end relative to first end, and first end is arranged in fixed bed.
3. radiator structure as claimed in claim 2, is characterized in that, the described first end of patterned carbon nano pipe array and the surface contact of heater element.
4. radiator structure as claimed in claim 2, it is characterized in that, described patterned carbon nano pipe array comprises multiple parallel carbon nano-tube, and carbon nano-tube extends from the first end of patterned carbon nano pipe array to the second end.
5. radiator structure as claimed in claim 4, it is characterized in that, the carbon nano-tube in described patterned carbon nano pipe array is perpendicular to the surface of heater element.
6. radiator structure as claimed in claim 4, it is characterized in that, in described patterned carbon nano pipe array, the length of carbon nano-tube is 0.5 millimeter-5 millimeters.
7. radiator structure as claimed in claim 1, it is characterized in that, the material of described fixed bed is leypewter, indium stannum alloy or SAC.
8. radiator structure as claimed in claim 1, it is characterized in that, the thickness of described fixed bed is 0.1 millimeter-1 millimeter.
9. radiator structure as claimed in claim 1, it is characterized in that, the carbon nano-tube part exposing fixed bed in described patterned carbon nano pipe array is removed, and the length that remaining carbon nano-tube exposes fixed bed is unequal.
10. a preparation method for radiator structure, it comprises the following steps:
There is provided a heater element, this heater element has a surface;
Form a molten fixing layer in the surface of heater element, the material of this fixed bed is the alloy of tin, indium, lead, antimony, silver, bismuth or its combination in any;
Prepare a carbon nano pipe array and be formed at a substrate, this carbon nano pipe array comprises a first end and second end relative with first end, and the second end is connected with substrate;
The first end of above-mentioned carbon nano pipe array to be inserted in this fixed bed and directly to contact with this heater element, cooling this fixed bed and solidify to it;
The substrate of removing carbon nano pipe array; And
Carbon nano pipe array is graphical, form a radiator structure on the surface of heater element.
The preparation method of 11. radiator structures as claimed in claim 10, is characterized in that, the described method of formation one molten fixing layer in the surface of heater element comprises coating process or print process.
The preparation method of 12. radiator structures as claimed in claim 10, it is characterized in that, this fixed bed of described cooling is at room temperature to cool.
The preparation method of 13. radiator structures as claimed in claim 10, is characterized in that, the method for described removing carbon nano pipe array substrate comprises mechanical milling method or chemical etching method.
The preparation method of 14. radiator structures as claimed in claim 13, is characterized in that, the method for described employing chemical etching method removing carbon nano pipe array substrate comprises the following steps: the corrosive liquid providing a solubilized substrate; The substrate of carbon nano pipe array is immersed in this corrosive liquid and soak 30 minutes-1 hour; And, the root of washing carbon nano pipe array.
The preparation method of 15. radiator structures as claimed in claim 10, it is characterized in that, described is adopt the laser beam of 10000-100000 watt/square millimeter to irradiate carbon nano pipe array with the speed of 800-1500 mm/second according to the path forming predetermined figure by patterned for carbon nano pipe array method, forms predetermined figure in carbon nano pipe array.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810068460.2A CN101626674B (en) | 2008-07-11 | 2008-07-11 | Radiating structure and preparation method thereof |
| US12/499,947 US20100006278A1 (en) | 2008-07-11 | 2009-07-09 | Heat dissipation device and method for manufacturing the same |
| JP2009164975A JP5485603B2 (en) | 2008-07-11 | 2009-07-13 | Manufacturing method of heat dissipation structure |
| JP2013079472A JP5795021B2 (en) | 2008-07-11 | 2013-04-05 | Heat dissipation structure |
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| CN200810068460.2A CN101626674B (en) | 2008-07-11 | 2008-07-11 | Radiating structure and preparation method thereof |
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| CN101626674A CN101626674A (en) | 2010-01-13 |
| CN101626674B true CN101626674B (en) | 2015-07-01 |
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| US (1) | US20100006278A1 (en) |
| JP (2) | JP5485603B2 (en) |
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| JP5350635B2 (en) | 2004-11-09 | 2013-11-27 | ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム | Production and application of nanofiber ribbons and sheets and nanofiber twisted and untwisted yarns |
| CN101880035A (en) | 2010-06-29 | 2010-11-10 | 清华大学 | Carbon nanotube structure |
| TWI442014B (en) | 2010-11-24 | 2014-06-21 | Ind Tech Res Inst | Heat sinking element and method of treating a heat sinking element |
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| US20100006278A1 (en) | 2010-01-14 |
| JP5795021B2 (en) | 2015-10-14 |
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| JP2013168665A (en) | 2013-08-29 |
| JP5485603B2 (en) | 2014-05-07 |
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