US20100006278A1 - Heat dissipation device and method for manufacturing the same - Google Patents
Heat dissipation device and method for manufacturing the same Download PDFInfo
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- US20100006278A1 US20100006278A1 US12/499,947 US49994709A US2010006278A1 US 20100006278 A1 US20100006278 A1 US 20100006278A1 US 49994709 A US49994709 A US 49994709A US 2010006278 A1 US2010006278 A1 US 2010006278A1
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- carbon nanotubes
- heat dissipation
- dissipation device
- fastening layer
- generating element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F2013/005—Thermal joints
- F28F2013/006—Heat conductive materials
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/02—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
- F28F3/022—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations the means being wires or pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
Definitions
- the disclosure relates to heat dissipation devices and methods for manufacturing the same, particularly, to a heat dissipation device based on carbon nanotubes and a method for manufacturing the same.
- a typical heat sink includes a substrate and a plurality of parallel fins extending up from the substrate.
- the heat sink abuts a heat source, such as a CPU.
- the heat sink transfers heat from the heat source to the surroundings, thus lowering the temperature of the heat source.
- the heat sink is attached to the heat source via a thermal interface material.
- the thermal interface material is disposed between the heat sink and the heat source to provide a large contact surface area, and ensuring good heat transfer from the heat source to the heat sink.
- the thermal interface material is commonly a composite made of a polymer base and a plurality of electrically conductive particles dispersed in the polymer base.
- the electrically conductive particles are made of a material such as graphite, boron nitride, silicon dioxide, aluminum oxide, or silver.
- thermal interface material between the heat sink and the heat source causes additional difficulty in production of thin-type electronic devices.
- FIG. 1 is a cross-sectional view of a first embodiment of a heat dissipation device on a heat generating element.
- FIG. 2 is a vertical view of the heat dissipation device of FIG. 1 .
- FIG. 3 is a cross-sectional view of a second embodiment of a heat dissipation device on a heat generating element.
- FIG. 4 is a cross-sectional view of a third embodiment of a heat dissipation device on a heat generating element.
- FIG. 5 is a flow chart of an exemplary embodiment of a method for manufacturing the heat dissipation device.
- FIG. 6 is a schematic view of the method for manufacturing a heat dissipation device on a heat generating element.
- a first embodiment of a heat dissipation device 20 for a heat generating element 30 includes a fastening layer 201 and a plurality of carbon nanotubes 203 .
- the fastening layer 201 is formed on the heat generating element 30 . Ends of the carbon nanotubes 203 are connected to the fastening layer 201 .
- the fastening layer 201 is configured to fix the carbon nanotubes 203 in a predetermined arrangement.
- the heat dissipation device 20 dissipates heat from the heat generating element 30
- the heat generating element 30 can be a central processing unit (CPU), but can be deployed for use with a variety of heat generating elements, whether they be micro-scale devices or large-scale devices..
- the fastening layer 201 is made of thermal conductive material.
- the thermal conductive material can be a composite with electrically conductive properties, such as a polymer composite or a ceramic composite.
- the thermal conductive material can be a composite of plastic and carbon nanotubes.
- the thermal conductive material can include a metal with a low melting point, such as tin (Sn), indium (In), lead (Pb), antimony (Sb), silver (Ag), bismuth (Bi), or alloys thereof.
- the alloy can be an alloy of tin and lead, an alloy of indium and tin, or an alloy of tin and silver.
- the fastening layer 201 should be designed to have suitable thicknesses allowing the heat dissipation device 20 to achieve a required performance. If the fastening layer 201 is too thick, the heat dissipation will have low heat dissipation efficiency. On the contrary, if the fastening layer 201 is too thin, the carbon nanotubes 203 cannot be firmly fastened on the heat generating element 30 . In the present embodiment, a thickness of the fastening layer 201 ranges from 0.1 mm to 1 mm.
- the carbon nanotubes 203 are arranged in an array structure (as shown in FIG. 2 ).
- the array is formed by arranging the carbon nanotubes 203 substantially parallel to each other. Any two adjacent carbon nanotubes are spaced by a distance in a range of about 0.1 nanometers (nm) to about 5.0 nm.
- the carbon nanotubes 203 extend from the fastening layer 201 , with embedded ends 203 a of the carbon nanotubes 203 embedded in the fastening layer 201 and exposed portions 203 b of the carbon nanotubes 203 exposed from the fastening layer 201 , as shown in FIG. 1 .
- the parallel carbon nanotubes 203 may be substantially perpendicular to a surface of the fastening layer 201 .
- the fastening layer 201 holds the carbon nanotubes 203 upright.
- the exposed portions 203 b of the carbon nanotubes 203 absorb and dissipate heat from the heat generating element 30 to the surrounding environment, thereby cooling the heat
- the carbon nanotubes 203 exposed from the fastening layer 201 may be made into a predetermined pattern. That is, the array of carbon nanotubes 203 may be patterned into a specific configuration. Particularly, some portions of the carbon nanotubes 203 exposed from the fastening layer 201 may be removed to form a crisscross pattern (as shown in FIG. 1 and FIG. 3 ), a circular pattern, or an annular pattern. Moreover, the exposed portions 203 b of the carbon nanotubes 203 remaining on the fastening layer 201 can be further treated to have substantially equal lengths (as shown in FIG. 1 ) or unequal lengths (as shown in FIG. 3 ).
- a space P is defined by the carbon nanotubes 203 with the predetermined pattern, e.g. the channels defined by the crisscross pattern.
- the space P is provided to allow convection, causing heat to be transferred to the surrounding environment rapidly.
- the array of carbon nanotubes 203 on the fastening layer 201 can be made to present a wavy pattern.
- each of the carbon nanotubes 203 has a length in a range from about 0.5 mm to about 5.0 mm.
- lengths of the carbon nanotubes 203 are about 1 mm.
- the carbon nanotubes 203 are longer than the thickness of the fastening layer 201 .
- the carbon nanotubes 203 aid in conducting heat to the surrounding environment because of the exposed portions 203 b.
- the carbon nanotubes 203 can be selected from the group of consisting of single-walled carbon nanotubes (SWCNTs), double-walled carbon nanotubes, multi-walled carbon nanotubes (MWCNTs), and combinations thereof.
- a diameter of each of the SWCNT is in a range from about 0.5 nm to about 100 nm.
- a diameter of each the double-walled carbon nanotube is in a range from about 1.0 nm to about 100.0 nm.
- a diameter of each the MWCNT is in a range from about 1.5 nm to about 100.0 nm.
- any two adjacent carbon nanotubes are spaced apart from each other by a distance in a range from about 0.1 nm to about 5.0 nm.
- the heat dissipation device 20 of the present embodiment can be deployed for use in a variety of heat generating elements with almost any shape, because the carbon nanotubes 203 are flexible. That is, regardless of the configuration of a heat generating element, the heat dissipation device 20 of the present embodiment is suitable to be attached to a non-planar surface.
- Step S 1 includes providing a fastening layer 201 in a molten state on a surface of a heat generating element 30 .
- step S 2 a carbon nanotube array having a plurality of carbon nanotubes 203 is formed on a substrate 204 .
- step S 3 ends of the carbon nanotubes 203 are inserted into the fastening layer 201 while it is in the molten state.
- step S 4 the fastening layer 201 is cooled.
- step S 5 the substrate 204 is removed.
- step S 6 the carbon nanotubes array is made into a predetermined pattern.
- step S 1 the fastening layer 201 in the molten state is applied on the surface of the heat generating element 30 .
- the fastening layer 201 is disposed on the heat generating element 30 by a coating process or a printing process. Since the fastening layer 201 is applied while in a molten state, the fastening layer 201 can conform to the surface of the heat generating element 30 . Furthermore, in order to avoid the heat generating element 30 from being damaged while the molten fastening layer 201 is applied, the fastening layer 201 is chosen to have a melting point lower than that of the heat generating element 30 .
- the fastening layer 201 is made of thermal conductive material including a metal with a low melting point, such as Sn, In, Pb, Sb, Ag, Bi or alloys thereof.
- the alloy can be an alloy of tin and lead, an alloy of indium and tin or an alloy of tin and silver.
- the fastening layer 201 is made of silver.
- the carbon nanotube array is formed on the substrate 204 by, for example, chemical vapor deposition (CVD), arc-discharge deposition, or laser vaporization deposition.
- the carbon nanotube array is formed by chemical vapor deposition.
- the carbon nanotube array is obtained by the following steps: firstly, the substrate 204 , which is substantially flat and smooth, is provided.
- the substrate 204 can be made of glass, silicon, silicon dioxide, metal, or metal oxide.
- the substrate 204 is made of silicon dioxide.
- a catalyst layer is uniformly formed on the substrate 204 .
- the catalyst layer can be made of a material selected from the group consisting of iron (Fe), cobalt (Co), nickel (Ni) and alloys thereof.
- the substrate 204 with the catalyst layer is annealed in air at about 700° C. to about 900° C. for about 30 minutes to about 90 minutes.
- the treated substrate 204 is put into a furnace.
- the furnace is then heated to about 500° C. to about 740° C. with a protecting gas flowing therein.
- a carbon source gas is introduced into the furnace for about 5 minutes to about 30 minutes to grow a plurality of parallel carbon nanotubes 203 on the substrate 204 .
- the carbon nanotube array is obtained and the carbon nanotubes 203 are substantially perpendicular to the substrate 204 .
- the carbon source gas can be acetylene, ethylene or methane.
- the protecting gas can be inert gas or nitrogen. Particularly, acetylene is chosen as the carbon source gas while argon gas is chosen as the protecting gas.
- step S 3 the substrate 204 on which the carbon nanotube array is formed is flipped over to allow the carbon nanotubes 203 to approach the fastening layer 201 in a molten state. Then, ends of the carbon nanotubes 203 , which are far away from the substrate 204 , are slowly inserted into the fastening layer 201 . In this step, it is noted that the fastening layer 201 should be maintained in the molten state to facilitate insertion of the carbon nanotubes 203 . The ends of the carbon nanotubes 203 can be inserted to various depths in the fastening layer 201 according to practical needs. In the present embodiment, the carbon nanotubes 203 are inserted deeply until the carbon nanotubes 203 are contacting the heat generating element 30 .
- step S 4 the fastening layer 201 in which the ends of the carbon nanotubes 203 are inserted is cooled at room temperature to allow the fastening layer 201 to change from the molten state to a solid state.
- the ends of the carbon nanotubes 203 are fixed and standing upright in the fastening layer 201 .
- step S 5 the substrate 204 on which the carbon nanotube array is formed is removed by, for example, mechanical polishing or chemical etching.
- the substrate 204 is removed by chemical etching.
- an etchant having a capacity of dissolving the substrate 204 is provided.
- hydrochloric acid is chosen as the etchant for removing the substrate 204 made of silicon dioxide.
- the substrate 204 carrying the carbon nanotubes is immersed into the etchant for about 30 minutes to 1 hour. Then, the substrate 204 and the catalyst layer formed on the substrate 204 will be removed completely.
- the opposite ends of the carbon nanotubes 203 which are far away from the fastening layer 201 , are exposed to the surrounding environment (as shown in FIG. 6 ).
- step S 6 the carbon nanotubes array fastened by the fastening layer 201 and disposed on the heat generating element 30 is made into a predetermined pattern, thereby obtaining the final heat dissipation device 20 .
- the carbon nanotubes array is patterned by a laser beam, using for example, a carbon dioxide laser.
- the track of the laser beam emitted from the carbon dioxide laser can be controlled by the computer.
- the predetermined pattern can be designed in advance and inputted into the computer program. That is, the emitted laser beam can be controlled by the computer program to trace the predetermined pattern, thereby forming the predetermined pattern on the carbon nanotubes array.
- a laser beam with a power density in a range from about 70000 watts/mm 2 to about 80000 watts/mm 2 is employed.
- the laser is driven to move with a velocity in a range of about 1000 to about 1200 mm/second.
- the heat dissipation device of the present embodiment is formed directly on a heat generating element.
- the heat energy from the heat generating element travels to the fastening layer and then to the carbon nanotube array, where it is dissipated, thereby lowering the temperature of the heat generating element.
- the heat dissipation efficiency is improved by virtue of having good thermal transfer capacity along the axial directions of the carbon nanotubes because the carbon nanotubes are substantially perpendicular to the surface of the heat generating element.
- the heat dissipation efficiency on the heat dissipation device is increased by way of an increase of heat dissipation surface.
Abstract
Description
- 1. Technical Field
- The disclosure relates to heat dissipation devices and methods for manufacturing the same, particularly, to a heat dissipation device based on carbon nanotubes and a method for manufacturing the same.
- 2. Description of Related Art
- Currently, it is possible to combine multiple electronic elements into an efficient module to perform complex tasks. However, electronic devices with high efficiency, such as central processing units (CPUs), will generate a great amount of heat during operation. If the heat is not dissipated efficiently, the electronic devices may become unstable or damaged. Generally, a heat sink is attached to an outer surface of a CPU to dissipate heat from the CPU. Meanwhile, miniaturization is a continuing trend in the production of electronic devices. Consequently, there is a demand for developing a heat sink that meets miniaturization requirements.
- A typical heat sink includes a substrate and a plurality of parallel fins extending up from the substrate. The heat sink abuts a heat source, such as a CPU. The heat sink transfers heat from the heat source to the surroundings, thus lowering the temperature of the heat source. Particularly, the heat sink is attached to the heat source via a thermal interface material. The thermal interface material is disposed between the heat sink and the heat source to provide a large contact surface area, and ensuring good heat transfer from the heat source to the heat sink. The thermal interface material is commonly a composite made of a polymer base and a plurality of electrically conductive particles dispersed in the polymer base. The electrically conductive particles are made of a material such as graphite, boron nitride, silicon dioxide, aluminum oxide, or silver.
- As the efficiency of electronic devices improves, the demand for better heat dissipation increases. However, the thermal conductivity of material currently used cannot meet the increasing demand.
- Furthermore, the thermal interface material between the heat sink and the heat source, causes additional difficulty in production of thin-type electronic devices.
- What is needed, therefore, is a heat dissipation device having high heat dissipation efficiency and suitable to be employed in thin-type electronic devices.
- Many aspects of the present heat dissipation device and method for manufacturing the same can be better understood with reference to the following drawings. The components in the drawings are not necessarily to scale, the emphasis instead being placed upon clearly illustrating the principles of the present heat dissipation device.
-
FIG. 1 is a cross-sectional view of a first embodiment of a heat dissipation device on a heat generating element. -
FIG. 2 is a vertical view of the heat dissipation device ofFIG. 1 . -
FIG. 3 is a cross-sectional view of a second embodiment of a heat dissipation device on a heat generating element. -
FIG. 4 is a cross-sectional view of a third embodiment of a heat dissipation device on a heat generating element. -
FIG. 5 is a flow chart of an exemplary embodiment of a method for manufacturing the heat dissipation device. -
FIG. 6 is a schematic view of the method for manufacturing a heat dissipation device on a heat generating element. - Corresponding reference characters indicate corresponding parts throughout the several views. The exemplifications set out herein illustrate at least one embodiment of the present heat dissipation device and method for manufacturing the heat dissipation device, in one form, and such exemplifications are not to be construed as limiting the scope of the disclosure in any manner.
- Referring to
FIG. 1 andFIG. 2 , a first embodiment of aheat dissipation device 20 for aheat generating element 30, includes afastening layer 201 and a plurality ofcarbon nanotubes 203. Thefastening layer 201 is formed on theheat generating element 30. Ends of thecarbon nanotubes 203 are connected to thefastening layer 201. Thefastening layer 201 is configured to fix thecarbon nanotubes 203 in a predetermined arrangement. In the present embodiment, theheat dissipation device 20 dissipates heat from theheat generating element 30 For example, theheat generating element 30 can be a central processing unit (CPU), but can be deployed for use with a variety of heat generating elements, whether they be micro-scale devices or large-scale devices.. - The
fastening layer 201 is made of thermal conductive material. The thermal conductive material can be a composite with electrically conductive properties, such as a polymer composite or a ceramic composite. For example, the thermal conductive material can be a composite of plastic and carbon nanotubes. Alternatively, the thermal conductive material can include a metal with a low melting point, such as tin (Sn), indium (In), lead (Pb), antimony (Sb), silver (Ag), bismuth (Bi), or alloys thereof. The alloy can be an alloy of tin and lead, an alloy of indium and tin, or an alloy of tin and silver. - In the present embodiment, the
fastening layer 201 should be designed to have suitable thicknesses allowing theheat dissipation device 20 to achieve a required performance. If thefastening layer 201 is too thick, the heat dissipation will have low heat dissipation efficiency. On the contrary, if thefastening layer 201 is too thin, thecarbon nanotubes 203 cannot be firmly fastened on theheat generating element 30. In the present embodiment, a thickness of thefastening layer 201 ranges from 0.1 mm to 1 mm. - The
carbon nanotubes 203 are arranged in an array structure (as shown inFIG. 2 ). The array is formed by arranging thecarbon nanotubes 203 substantially parallel to each other. Any two adjacent carbon nanotubes are spaced by a distance in a range of about 0.1 nanometers (nm) to about 5.0 nm. Thecarbon nanotubes 203 extend from thefastening layer 201, with embeddedends 203 a of thecarbon nanotubes 203 embedded in thefastening layer 201 and exposedportions 203 b of thecarbon nanotubes 203 exposed from thefastening layer 201, as shown inFIG. 1 . Theparallel carbon nanotubes 203 may be substantially perpendicular to a surface of thefastening layer 201. Thefastening layer 201 holds thecarbon nanotubes 203 upright. The exposedportions 203 b of thecarbon nanotubes 203 absorb and dissipate heat from theheat generating element 30 to the surrounding environment, thereby cooling theheat generating element 30. - Referring to
FIG. 1 toFIG. 3 , thecarbon nanotubes 203 exposed from thefastening layer 201 may be made into a predetermined pattern. That is, the array ofcarbon nanotubes 203 may be patterned into a specific configuration. Particularly, some portions of thecarbon nanotubes 203 exposed from thefastening layer 201 may be removed to form a crisscross pattern (as shown inFIG. 1 andFIG. 3 ), a circular pattern, or an annular pattern. Moreover, the exposedportions 203 b of thecarbon nanotubes 203 remaining on thefastening layer 201 can be further treated to have substantially equal lengths (as shown inFIG. 1 ) or unequal lengths (as shown inFIG. 3 ). In the present embodiment, a space P is defined by thecarbon nanotubes 203 with the predetermined pattern, e.g. the channels defined by the crisscross pattern. The space P is provided to allow convection, causing heat to be transferred to the surrounding environment rapidly. Alternatively, referring toFIG. 4 , the array ofcarbon nanotubes 203 on thefastening layer 201 can be made to present a wavy pattern. - In the present embodiment, each of the
carbon nanotubes 203 has a length in a range from about 0.5 mm to about 5.0 mm. For example, lengths of thecarbon nanotubes 203 are about 1 mm. It is understood that thecarbon nanotubes 203 are longer than the thickness of thefastening layer 201. Thus, thecarbon nanotubes 203 aid in conducting heat to the surrounding environment because of the exposedportions 203 b. In the present embodiment, thecarbon nanotubes 203 can be selected from the group of consisting of single-walled carbon nanotubes (SWCNTs), double-walled carbon nanotubes, multi-walled carbon nanotubes (MWCNTs), and combinations thereof. In such case, a diameter of each of the SWCNT is in a range from about 0.5 nm to about 100 nm. A diameter of each the double-walled carbon nanotube is in a range from about 1.0 nm to about 100.0 nm. A diameter of each the MWCNT is in a range from about 1.5 nm to about 100.0 nm. Moreover, any two adjacent carbon nanotubes are spaced apart from each other by a distance in a range from about 0.1 nm to about 5.0 nm. - The
heat dissipation device 20 of the present embodiment can be deployed for use in a variety of heat generating elements with almost any shape, because thecarbon nanotubes 203 are flexible. That is, regardless of the configuration of a heat generating element, theheat dissipation device 20 of the present embodiment is suitable to be attached to a non-planar surface. - Referring to
FIG. 5 andFIG. 6 , an embodiment of a method for manufacturing aheat dissipation device 20 is shown. Step S1 includes providing afastening layer 201 in a molten state on a surface of aheat generating element 30. In step S2, a carbon nanotube array having a plurality ofcarbon nanotubes 203 is formed on asubstrate 204. In step S3, ends of thecarbon nanotubes 203 are inserted into thefastening layer 201 while it is in the molten state. In step S4, thefastening layer 201 is cooled. In step S5, thesubstrate 204 is removed. In step S6, the carbon nanotubes array is made into a predetermined pattern. - The method is described in more detail as follows.
- In step S1, the
fastening layer 201 in the molten state is applied on the surface of theheat generating element 30. In the present embodiment, thefastening layer 201 is disposed on theheat generating element 30 by a coating process or a printing process. Since thefastening layer 201 is applied while in a molten state, thefastening layer 201 can conform to the surface of theheat generating element 30. Furthermore, in order to avoid theheat generating element 30 from being damaged while themolten fastening layer 201 is applied, thefastening layer 201 is chosen to have a melting point lower than that of theheat generating element 30. Thefastening layer 201 is made of thermal conductive material including a metal with a low melting point, such as Sn, In, Pb, Sb, Ag, Bi or alloys thereof. The alloy can be an alloy of tin and lead, an alloy of indium and tin or an alloy of tin and silver. In the present embodiment, thefastening layer 201 is made of silver. - In step S2, the carbon nanotube array is formed on the
substrate 204 by, for example, chemical vapor deposition (CVD), arc-discharge deposition, or laser vaporization deposition. In the present embodiment, the carbon nanotube array is formed by chemical vapor deposition. Particularly, the carbon nanotube array is obtained by the following steps: firstly, thesubstrate 204, which is substantially flat and smooth, is provided. In the present embodiment, thesubstrate 204 can be made of glass, silicon, silicon dioxide, metal, or metal oxide. Preferably, thesubstrate 204 is made of silicon dioxide. Then, a catalyst layer is uniformly formed on thesubstrate 204. The catalyst layer can be made of a material selected from the group consisting of iron (Fe), cobalt (Co), nickel (Ni) and alloys thereof. Secondly, thesubstrate 204 with the catalyst layer is annealed in air at about 700° C. to about 900° C. for about 30 minutes to about 90 minutes. The treatedsubstrate 204 is put into a furnace. The furnace is then heated to about 500° C. to about 740° C. with a protecting gas flowing therein. Next, a carbon source gas is introduced into the furnace for about 5 minutes to about 30 minutes to grow a plurality ofparallel carbon nanotubes 203 on thesubstrate 204. Thus, the carbon nanotube array is obtained and thecarbon nanotubes 203 are substantially perpendicular to thesubstrate 204. - In the present embodiment, the carbon source gas can be acetylene, ethylene or methane. The protecting gas can be inert gas or nitrogen. Particularly, acetylene is chosen as the carbon source gas while argon gas is chosen as the protecting gas.
- In step S3, the
substrate 204 on which the carbon nanotube array is formed is flipped over to allow thecarbon nanotubes 203 to approach thefastening layer 201 in a molten state. Then, ends of thecarbon nanotubes 203, which are far away from thesubstrate 204, are slowly inserted into thefastening layer 201. In this step, it is noted that thefastening layer 201 should be maintained in the molten state to facilitate insertion of thecarbon nanotubes 203. The ends of thecarbon nanotubes 203 can be inserted to various depths in thefastening layer 201 according to practical needs. In the present embodiment, thecarbon nanotubes 203 are inserted deeply until thecarbon nanotubes 203 are contacting theheat generating element 30. - In step S4, the
fastening layer 201 in which the ends of thecarbon nanotubes 203 are inserted is cooled at room temperature to allow thefastening layer 201 to change from the molten state to a solid state. Thus, the ends of thecarbon nanotubes 203 are fixed and standing upright in thefastening layer 201. - In step S5, the
substrate 204 on which the carbon nanotube array is formed is removed by, for example, mechanical polishing or chemical etching. In the present embodiment, thesubstrate 204 is removed by chemical etching. In use, an etchant having a capacity of dissolving thesubstrate 204 is provided. In the present embodiment, hydrochloric acid is chosen as the etchant for removing thesubstrate 204 made of silicon dioxide. Thesubstrate 204 carrying the carbon nanotubes is immersed into the etchant for about 30 minutes to 1 hour. Then, thesubstrate 204 and the catalyst layer formed on thesubstrate 204 will be removed completely. The opposite ends of thecarbon nanotubes 203, which are far away from thefastening layer 201, are exposed to the surrounding environment (as shown inFIG. 6 ). - In step S6, the carbon nanotubes array fastened by the
fastening layer 201 and disposed on theheat generating element 30 is made into a predetermined pattern, thereby obtaining the finalheat dissipation device 20. In the present embodiment, the carbon nanotubes array is patterned by a laser beam, using for example, a carbon dioxide laser. In addition, the track of the laser beam emitted from the carbon dioxide laser can be controlled by the computer. Particularly, the predetermined pattern can be designed in advance and inputted into the computer program. That is, the emitted laser beam can be controlled by the computer program to trace the predetermined pattern, thereby forming the predetermined pattern on the carbon nanotubes array. In the present embodiment, a laser beam with a power density in a range from about 70000 watts/mm2 to about 80000 watts/mm2 is employed. The laser is driven to move with a velocity in a range of about 1000 to about 1200 mm/second. - In conclusion, the heat dissipation device of the present embodiment is formed directly on a heat generating element. In principle, the heat energy from the heat generating element travels to the fastening layer and then to the carbon nanotube array, where it is dissipated, thereby lowering the temperature of the heat generating element. The heat dissipation efficiency is improved by virtue of having good thermal transfer capacity along the axial directions of the carbon nanotubes because the carbon nanotubes are substantially perpendicular to the surface of the heat generating element. Furthermore, due to a large ratio of length to diameter of the carbon nanotube, the heat dissipation efficiency on the heat dissipation device is increased by way of an increase of heat dissipation surface.
- Finally, it is to be understood that the above-described embodiments are intended to illustrate rather than limit the disclosure. Variations may be made to the embodiments without departing from the spirit of the disclosure as claimed. The above-described embodiments illustrate the scope of the disclosure but do not restrict the scope of the disclosure.
- It is also to be understood that above description and the claims drawn to a method may include some indication in reference to certain steps. However, the indication used is only to be viewed for identification purposes and not as a suggestion as to an order for the steps.
Claims (20)
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CN200810068460.2A CN101626674B (en) | 2008-07-11 | 2008-07-11 | Radiating structure and preparation method thereof |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US9784249B2 (en) | 2012-08-01 | 2017-10-10 | The Board Of Regents, The University Of Texas System | Coiled and non-coiled twisted nanofiber yarn torsional and tensile actuators |
US9903350B2 (en) | 2012-08-01 | 2018-02-27 | The Board Of Regents, The University Of Texas System | Coiled and non-coiled twisted polymer fiber torsional and tensile actuators |
US10480491B2 (en) | 2012-08-01 | 2019-11-19 | The Board Of Regents, The University Of Texas System | Coiled, twisted nanofiber yarn and polymer fiber torsional actuators |
US11143169B2 (en) | 2012-08-01 | 2021-10-12 | Board Of Regents, The University Of Texas System | Coiled and twisted nanofiber yarn and polymer fiber actuators |
US11149720B2 (en) | 2012-08-01 | 2021-10-19 | Board Of Regents, The University Of Texas System | Thermally-powered coiled polymer fiber tensile actuator system and method |
US11629705B2 (en) | 2012-08-01 | 2023-04-18 | The Board Of Regents, The University Of Texas System | Polymer fiber actuators |
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JP2017224686A (en) * | 2016-06-14 | 2017-12-21 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method of semiconductor device |
Also Published As
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JP5795021B2 (en) | 2015-10-14 |
CN101626674A (en) | 2010-01-13 |
JP2013168665A (en) | 2013-08-29 |
JP2010021552A (en) | 2010-01-28 |
CN101626674B (en) | 2015-07-01 |
JP5485603B2 (en) | 2014-05-07 |
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