CN101473457B - 半导体发光元件 - Google Patents

半导体发光元件 Download PDF

Info

Publication number: CN101473457B
Authority: CN; China
Prior art keywords: electrode; mentioned; semiconductor light; emitting elements; layer
Prior art date: 2006-07-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CN2007800226487A

Other languages

English (en)

Chinese (zh)

Other versions

CN101473457A (zh

Inventor

木下嘉将

龟井英德

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Panasonic Holdings Corp

Original Assignee

Matsushita Electric Industrial Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-07-05

Filing date

2007-06-19

Publication date

2012-06-27

2007-06-19 Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd

2009-07-01 Publication of CN101473457A publication Critical patent/CN101473457A/zh

2012-06-27 Application granted granted Critical

2012-06-27 Publication of CN101473457B publication Critical patent/CN101473457B/zh

Status Expired - Fee Related legal-status Critical Current

2027-06-19 Anticipated expiration legal-status Critical

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 95
238000000034 method Methods 0.000 title description 10
239000000758 substrate Substances 0.000 claims abstract description 46
230000007547 defect Effects 0.000 claims abstract description 18
239000013078 crystal Substances 0.000 claims abstract description 16
230000002950 deficient Effects 0.000 claims description 39
239000012141 concentrate Substances 0.000 claims description 7
230000000737 periodic effect Effects 0.000 claims description 7
235000012431 wafers Nutrition 0.000 description 28
238000004519 manufacturing process Methods 0.000 description 17
239000010931 gold Substances 0.000 description 16
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
239000010936 titanium Substances 0.000 description 10
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
229910052737 gold Inorganic materials 0.000 description 8
239000004411 aluminium Substances 0.000 description 6
229910052782 aluminium Inorganic materials 0.000 description 6
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
230000015572 biosynthetic process Effects 0.000 description 6
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
235000012239 silicon dioxide Nutrition 0.000 description 5
239000000377 silicon dioxide Substances 0.000 description 5
229910052719 titanium Inorganic materials 0.000 description 5
239000010948 rhodium Substances 0.000 description 4
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
230000004888 barrier function Effects 0.000 description 3
230000006866 deterioration Effects 0.000 description 3
239000007772 electrode material Substances 0.000 description 3
229910052697 platinum Inorganic materials 0.000 description 3
229910002601 GaN Inorganic materials 0.000 description 2
229910004298 SiO 2 Inorganic materials 0.000 description 2
229910045601 alloy Inorganic materials 0.000 description 2
239000000956 alloy Substances 0.000 description 2
239000000919 ceramic Substances 0.000 description 2
239000011651 chromium Substances 0.000 description 2
238000000227 grinding Methods 0.000 description 2
150000004767 nitrides Chemical class 0.000 description 2
238000001020 plasma etching Methods 0.000 description 2
229910052703 rhodium Inorganic materials 0.000 description 2
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
238000007740 vapor deposition Methods 0.000 description 2
239000001993 wax Substances 0.000 description 2
229910001316 Ag alloy Inorganic materials 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
229910017052 cobalt Inorganic materials 0.000 description 1
239000010941 cobalt Substances 0.000 description 1
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
238000002425 crystallisation Methods 0.000 description 1
230000008025 crystallization Effects 0.000 description 1
230000008021 deposition Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
239000007792 gaseous phase Substances 0.000 description 1
210000004276 hyalin Anatomy 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
238000003475 lamination Methods 0.000 description 1
239000012528 membrane Substances 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
-1 nitride compound Chemical class 0.000 description 1
IVQODXYTQYNJFI-UHFFFAOYSA-N oxotin;silver Chemical compound [Ag].[Sn]=O IVQODXYTQYNJFI-UHFFFAOYSA-N 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
230000035699 permeability Effects 0.000 description 1
238000005554 pickling Methods 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000004332 silver Substances 0.000 description 1
230000002269 spontaneous effect Effects 0.000 description 1
230000000087 stabilizing effect Effects 0.000 description 1
239000000126 substance Substances 0.000 description 1
230000003746 surface roughness Effects 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Led Devices (AREA)

CN2007800226487A 2006-07-05 2007-06-19 半导体发光元件 Expired - Fee Related CN101473457B (zh)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP185219/2006		2006-07-05
JP2006185219		2006-07-05
PCT/JP2007/062295 WO2008004437A1 (fr)	2006-07-05	2007-06-19	Élément semi-conducteur émettant de la lumière et procédé de fabrication de celui-ci

Publications (2)

Publication Number	Publication Date
CN101473457A CN101473457A (zh)	2009-07-01
CN101473457B true CN101473457B (zh)	2012-06-27

Family

ID=38894408

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN2007800226487A Expired - Fee Related CN101473457B (zh)	2006-07-05	2007-06-19	半导体发光元件

Country Status (6)

Country	Link
US (1)	US8178889B2 (ko)
EP (1)	EP2037507A4 (ko)
JP (1)	JPWO2008004437A1 (ko)
KR (1)	KR20090027220A (ko)
CN (1)	CN101473457B (ko)
WO (1)	WO2008004437A1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2009139376A1 (ja)	2008-05-14	2009-11-19	昭和電工株式会社	Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2011014890A (ja)	2009-06-02	2011-01-20	Mitsubishi Chemicals Corp	金属基板及び光源装置
WO2011010436A1 (ja) *	2009-07-22	2011-01-27	パナソニック株式会社	発光ダイオード
JP4836218B1 (ja) *	2010-07-30	2011-12-14	Ｄｏｗａエレクトロニクス株式会社	半導体素子と半導体素子の製造方法
JP2012142513A (ja) *	2011-01-06	2012-07-26	Nichia Chem Ind Ltd	半導体発光素子の製造方法
CN102214746B (zh) *	2011-06-13	2012-10-03	江西联创光电科技股份有限公司	一种氮化镓基功率型led芯片制作方法
CN103378233B (zh) *	2012-04-16	2016-02-10	展晶科技(深圳)有限公司	发光二极管晶粒及使用该晶粒的发光二极管封装结构
US9530703B2 (en) *	2012-12-20	2016-12-27	Mitsubishi Electric Corporation	Method for manufacturing silicon carbide semiconductor device
JP5814968B2 (ja) *	2013-03-22	2015-11-17	株式会社東芝	窒化物半導体発光装置
JP2016149380A (ja) *	2013-06-14	2016-08-18	パナソニックＩｐマネジメント株式会社	発光素子
JP6584799B2 (ja) *	2015-03-16	2019-10-02	アルパッド株式会社	半導体発光素子
JP7105612B2 (ja)	2018-05-21	2022-07-25	シャープ株式会社	画像表示素子およびその形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN1582520A (zh) *	2001-10-12	2005-02-16	住友电气工业株式会社	半导体光发射装置的制造方法、半导体光发射装置、半导体装置的制造方法、半导体装置、一种装置的制造方法、以及一种装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH10209496A (ja) *	1997-01-24	1998-08-07	Rohm Co Ltd	半導体発光素子
JP3930161B2 (ja)	1997-08-29	2007-06-13	株式会社東芝	窒化物系半導体素子、発光素子及びその製造方法
US6015979A (en) *	1997-08-29	2000-01-18	Kabushiki Kaisha Toshiba	Nitride-based semiconductor element and method for manufacturing the same
JP4169821B2 (ja)	1998-02-18	2008-10-22	シャープ株式会社	発光ダイオード
JP3623713B2 (ja) *	2000-03-24	2005-02-23	日本電気株式会社	窒化物半導体発光素子
JP2002033512A (ja)	2000-07-13	2002-01-31	Nichia Chem Ind Ltd	窒化物半導体発光ダイオード
JP3562478B2 (ja) *	2001-03-16	2004-09-08	日亜化学工業株式会社	窒化物半導体の成長方法及びそれを用いた素子
JP2003008080A (ja) *	2001-06-27	2003-01-10	Sanyo Electric Co Ltd	発光又は受光装置
JP4388720B2 (ja)	2001-10-12	2009-12-24	住友電気工業株式会社	半導体発光素子の製造方法
US6812496B2 (en) *	2002-01-10	2004-11-02	Sharp Kabushiki Kaisha	Group III nitride semiconductor laser device
JP3926271B2 (ja) *	2002-01-10	2007-06-06	シャープ株式会社	Ｉｉｉ族窒化物半導体レーザ素子及びその製造方法
JP2003229638A (ja)	2002-02-05	2003-08-15	Sumitomo Electric Ind Ltd	窒化物系化合物半導体発光素子
JP4178807B2 (ja)	2002-02-19	2008-11-12	ソニー株式会社	半導体発光素子およびその製造方法
JP4443097B2 (ja) *	2002-06-20	2010-03-31	ソニー株式会社	ＧａＮ系半導体素子の作製方法
US7372077B2 (en) *	2003-02-07	2008-05-13	Sanyo Electric Co., Ltd.	Semiconductor device
JP4056481B2 (ja)	2003-02-07	2008-03-05	三洋電機株式会社	半導体素子およびその製造方法
US7462882B2 (en) *	2003-04-24	2008-12-09	Sharp Kabushiki Kaisha	Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
KR100576853B1 (ko) *	2003-12-18	2006-05-10	삼성전기주식회사	질화물 반도체 발광소자
JP2006024713A (ja)	2004-07-07	2006-01-26	Matsushita Electric Ind Co Ltd	窒化物半導体素子およびその製造方法
JP4974455B2 (ja) *	2004-11-26	2012-07-11	ソニー株式会社	ＧａＮ系発光ダイオードの製造方法

2007
- 2007-06-19 KR KR1020087031393A patent/KR20090027220A/ko not_active Application Discontinuation
- 2007-06-19 US US12/305,299 patent/US8178889B2/en not_active Expired - Fee Related
- 2007-06-19 EP EP07745506.1A patent/EP2037507A4/en not_active Withdrawn
- 2007-06-19 CN CN2007800226487A patent/CN101473457B/zh not_active Expired - Fee Related
- 2007-06-19 WO PCT/JP2007/062295 patent/WO2008004437A1/ja active Application Filing
- 2007-06-19 JP JP2008523639A patent/JPWO2008004437A1/ja active Pending

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN1582520A (zh) *	2001-10-12	2005-02-16	住友电气工业株式会社	半导体光发射装置的制造方法、半导体光发射装置、半导体装置的制造方法、半导体装置、一种装置的制造方法、以及一种装置

Also Published As

Publication number	Publication date
US8178889B2 (en)	2012-05-15
JPWO2008004437A1 (ja)	2009-12-03
EP2037507A1 (en)	2009-03-18
US20090127568A1 (en)	2009-05-21
CN101473457A (zh)	2009-07-01
EP2037507A4 (en)	2015-11-25
KR20090027220A (ko)	2009-03-16
WO2008004437A1 (fr)	2008-01-10

Legal Events

Date	Code	Title	Description
2009-07-01	C06	Publication
2009-07-01	PB01	Publication
2009-09-02	C10	Entry into substantive examination
2009-09-02	SE01	Entry into force of request for substantive examination
2012-06-27	C14	Grant of patent or utility model
2012-06-27	GR01	Patent grant
2014-08-13	C17	Cessation of patent right
2014-08-13	CF01	Termination of patent right due to non-payment of annual fee	Granted publication date: 20120627 Termination date: 20130619

Publication	Publication Date	Title
CN101473457B (zh)	2012-06-27	半导体发光元件
US10804450B2 (en)	2020-10-13	Method of making layered structure with metal layers using resist patterns and electrolytic plating
US20050133799A1 (en)	2005-06-23	Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
US9099610B2 (en)	2015-08-04	Light emitting device and light emitting device package
CN100568561C (zh)	2009-12-09	氮化镓基化合物半导体发光器件
US20140319557A1 (en)	2014-10-30	Vertically structured group iii nitride semiconductor led chip and method for manufacturing the same
KR20070038272A (ko)	2007-04-10	수직구조 발광 다이오드의 제조 방법
JP4678211B2 (ja)	2011-04-27	発光装置
KR20140133944A (ko)	2014-11-20	Ⅲ족 질화물 반도체 수직형 구조 ｌｅｄ 칩 및 그 제조 방법
JP2009295611A (ja)	2009-12-17	半導体発光素子及びその製造方法
JP2006253240A (ja)	2006-09-21	ＧａＮ系発光ダイオードおよび発光装置
US8772808B2 (en)	2014-07-08	Semiconductor light emitting element and manufacturing method thereof
US20120043550A1 (en)	2012-02-23	Semiconductor light emitting device and method for manufacturing same
JP2012142401A (ja)	2012-07-26	半導体チップの製造方法および半導体ウエハの分割方法
JP2019106406A (ja)	2019-06-27	半導体発光素子およびそれを用いた表面実装デバイスならびにそれらの製造方法
JP5306904B2 (ja)	2013-10-02	窒化物半導体発光ダイオード素子およびその製造方法
KR20070008759A (ko)	2007-01-18	수직구조 발광 다이오드의 제조 방법
JP4236738B2 (ja)	2009-03-11	半導体素子の製造方法
JP2009094108A (ja)	2009-04-30	ＧａＮ系ＬＥＤ素子の製造方法
JP2015035510A (ja)	2015-02-19	発光素子
JP2014154693A (ja)	2014-08-25	Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US20120161183A1 (en)	2012-06-28	Semiconductor light emitting element
JP7450157B2 (ja)	2024-03-15	発光素子及びその製造方法
JP5533573B2 (ja)	2014-06-25	半導体素子
JP2011014936A (ja)	2011-01-20	窒化ガリウム系化合物半導体発光素子