CN101452904A - 引线框架及其制造方法和受光发光装置 - Google Patents
引线框架及其制造方法和受光发光装置 Download PDFInfo
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- CN101452904A CN101452904A CNA2008101816558A CN200810181655A CN101452904A CN 101452904 A CN101452904 A CN 101452904A CN A2008101816558 A CNA2008101816558 A CN A2008101816558A CN 200810181655 A CN200810181655 A CN 200810181655A CN 101452904 A CN101452904 A CN 101452904A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 80
- 239000004065 semiconductor Substances 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 238000005275 alloying Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000002310 reflectometry Methods 0.000 claims description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 claims description 6
- 239000002210 silicon-based material Substances 0.000 claims description 5
- 150000003852 triazoles Chemical class 0.000 claims description 3
- 230000006866 deterioration Effects 0.000 abstract description 6
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 59
- 229910052737 gold Inorganic materials 0.000 description 40
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 36
- 238000007747 plating Methods 0.000 description 34
- 230000033228 biological regulation Effects 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 229920001296 polysiloxane Polymers 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000007774 longterm Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 239000005864 Sulphur Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000005987 sulfurization reaction Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 206010013786 Dry skin Diseases 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007591 painting process Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical class CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000005370 alkoxysilyl group Chemical group 0.000 description 1
- -1 alkyl hydrosulfide Chemical compound 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000003354 benzotriazolyl group Chemical class N1N=NC2=C1C=CC=C2* 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- HRKQOINLCJTGBK-UHFFFAOYSA-N dihydroxidosulfur Chemical compound OSO HRKQOINLCJTGBK-UHFFFAOYSA-N 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007311975A JP4758976B2 (ja) | 2007-12-03 | 2007-12-03 | 半導体発光素子搭載用リードフレーム及びその製造方法並びに発光装置 |
JP2007-311975 | 2007-12-03 | ||
JP2007311975 | 2007-12-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101452904A true CN101452904A (zh) | 2009-06-10 |
CN101452904B CN101452904B (zh) | 2013-05-08 |
Family
ID=40675510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101816558A Active CN101452904B (zh) | 2007-12-03 | 2008-12-02 | 引线框架及其制造方法和受光发光装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7888697B2 (zh) |
JP (1) | JP4758976B2 (zh) |
KR (1) | KR101457489B1 (zh) |
CN (1) | CN101452904B (zh) |
TW (1) | TWI456721B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102473830A (zh) * | 2009-07-10 | 2012-05-23 | 古河电气工业株式会社 | 光半导体装置用引线框架及其制造方法、及光半导体装置 |
CN102804428A (zh) * | 2010-03-30 | 2012-11-28 | 大日本印刷株式会社 | Led用引线框或基板、半导体装置和led用引线框或基板的制造方法 |
CN102844897A (zh) * | 2010-06-15 | 2012-12-26 | 古河电气工业株式会社 | 光半导体装置用引线框架、光半导体装置用引线框架的制造方法以及光半导体装置 |
CN103392242A (zh) * | 2011-02-28 | 2013-11-13 | 日亚化学工业株式会社 | 发光装置 |
US9773960B2 (en) | 2010-11-02 | 2017-09-26 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
CN111247645A (zh) * | 2017-10-25 | 2020-06-05 | 松下知识产权经营株式会社 | 光半导体装置用封装、光半导体装置及光半导体装置用封装的制造方法 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4897981B2 (ja) * | 2008-12-26 | 2012-03-14 | 古河電気工業株式会社 | 光半導体装置用リードフレーム、その製造方法および光半導体装置 |
JP5322801B2 (ja) * | 2009-06-19 | 2013-10-23 | スタンレー電気株式会社 | 半導体発光装置及びその製造方法 |
KR20120089567A (ko) * | 2009-06-24 | 2012-08-13 | 후루카와 덴키 고교 가부시키가이샤 | 광반도체 장치용 리드 프레임, 광반도체 장치용 리드 프레임의 제조방법, 및 광반도체 장치 |
WO2011039795A1 (ja) * | 2009-09-29 | 2011-04-07 | パナソニック株式会社 | 半導体装置とその製造方法 |
WO2011125346A1 (ja) * | 2010-04-07 | 2011-10-13 | シャープ株式会社 | 発光装置およびその製造方法 |
JP4981979B2 (ja) * | 2010-06-15 | 2012-07-25 | 古河電気工業株式会社 | 高反射率化させためっき皮膜を有するled用部品材料およびled用部品 |
JP5554155B2 (ja) * | 2010-06-23 | 2014-07-23 | 古河電気工業株式会社 | 光半導体装置用リードフレームおよび光半導体装置 |
JP5089795B2 (ja) * | 2010-06-23 | 2012-12-05 | 古河電気工業株式会社 | 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法、および光半導体装置 |
DE202010009488U1 (de) * | 2010-06-24 | 2010-10-07 | Ridi-Leuchten Gmbh | Lichtband |
WO2012066461A1 (en) * | 2010-11-19 | 2012-05-24 | Koninklijke Philips Electronics N.V. | Islanded carrier for light emitting device |
TW201250964A (en) * | 2011-01-27 | 2012-12-16 | Dainippon Printing Co Ltd | Resin-attached lead frame, method for manufacturing same, and lead frame |
US9117941B2 (en) * | 2011-09-02 | 2015-08-25 | King Dragon International Inc. | LED package and method of the same |
US20150001570A1 (en) * | 2011-09-02 | 2015-01-01 | King Dragon International Inc. | LED Package and Method of the Same |
JP5985201B2 (ja) * | 2012-02-20 | 2016-09-06 | シャープ株式会社 | 発光装置および照明装置 |
JP5978705B2 (ja) * | 2012-03-28 | 2016-08-24 | 大日本印刷株式会社 | Led素子搭載用基板及びその製造方法、並びにled素子搭載用基板を用いた半導体装置 |
KR101978635B1 (ko) * | 2012-12-28 | 2019-05-15 | 엘지이노텍 주식회사 | 발광소자 패키지 |
US9520347B2 (en) | 2013-05-03 | 2016-12-13 | Honeywell International Inc. | Lead frame construct for lead-free solder connections |
DE102014101154A1 (de) * | 2014-01-30 | 2015-07-30 | Osram Opto Semiconductors Gmbh | Optoelektronische Anordnung |
JP6448986B2 (ja) * | 2014-10-31 | 2019-01-09 | Shマテリアル株式会社 | リードフレームの製造方法 |
JP6524517B2 (ja) * | 2015-04-27 | 2019-06-05 | 大口マテリアル株式会社 | 光半導体装置用リードフレーム、光半導体装置用樹脂付きリードフレーム及び光半導体装置と、光半導体装置用リードフレームの製造方法 |
US10483445B2 (en) * | 2017-08-31 | 2019-11-19 | Nichia Corporation | Lead frame, package for light emitting device, light emitting device, and method for manufacturing light emitting device |
JP6675032B1 (ja) * | 2019-07-08 | 2020-04-01 | 御田 護 | 半導体発光装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2419157C3 (de) * | 1974-04-20 | 1979-06-28 | W.C. Heraeus Gmbh, 6450 Hanau | Metallischer Träger für Halbleiterbauelemente und Verfahren zu seiner Herstellung |
JPH088280A (ja) * | 1994-06-22 | 1996-01-12 | Omron Corp | 電子部品及びその製造方法 |
US6583444B2 (en) * | 1997-02-18 | 2003-06-24 | Tessera, Inc. | Semiconductor packages having light-sensitive chips |
US6222207B1 (en) * | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
JP3062192B1 (ja) * | 1999-09-01 | 2000-07-10 | 松下電子工業株式会社 | リ―ドフレ―ムとそれを用いた樹脂封止型半導体装置の製造方法 |
US6680568B2 (en) * | 2000-02-09 | 2004-01-20 | Nippon Leiz Corporation | Light source |
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2007
- 2007-12-03 JP JP2007311975A patent/JP4758976B2/ja active Active
-
2008
- 2008-12-01 KR KR1020080120628A patent/KR101457489B1/ko active IP Right Grant
- 2008-12-01 TW TW097146604A patent/TWI456721B/zh active
- 2008-12-02 CN CN2008101816558A patent/CN101452904B/zh active Active
- 2008-12-02 US US12/326,628 patent/US7888697B2/en active Active
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Also Published As
Publication number | Publication date |
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JP4758976B2 (ja) | 2011-08-31 |
US20090141498A1 (en) | 2009-06-04 |
CN101452904B (zh) | 2013-05-08 |
TW200939440A (en) | 2009-09-16 |
KR20090057915A (ko) | 2009-06-08 |
US7888697B2 (en) | 2011-02-15 |
KR101457489B1 (ko) | 2014-11-07 |
JP2009135355A (ja) | 2009-06-18 |
TWI456721B (zh) | 2014-10-11 |
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