CN101399262A - 功率半导体装置 - Google Patents

功率半导体装置 Download PDF

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Publication number
CN101399262A
CN101399262A CNA2008102138951A CN200810213895A CN101399262A CN 101399262 A CN101399262 A CN 101399262A CN A2008102138951 A CNA2008102138951 A CN A2008102138951A CN 200810213895 A CN200810213895 A CN 200810213895A CN 101399262 A CN101399262 A CN 101399262A
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power semiconductor
group
class component
strip line
plug class
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CN101399262B (zh
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R·巴耶勒
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本发明的名称是功率半导体装置，提供了一种功率半导体装置，它包括功率半导体芯片，而功率半导体芯片电连接到具有至少两个插头类元件的一组插头类元件，并且还包括金属片带状线，金属片带状线具有接收第一组插头类元件的一组开口，其中，金属片带状线中的该组开口和该组插头类元件建立了压入连接。

Description

功率半导体装置
技术领域
本发明涉及功率半导体装置，具体地说，涉及功率半导体模块。
背景技术
功率半导体模块特别用于切换高电流和高电压。但是，模块和到模块的连接中的寄生电感会由于高电流或高电压的快速切换而导致功率损失，并生成不必要的过压。
发明内容
本文提供了一种功率半导体装置，它包括功率半导体芯片，而功率半导体芯片电连接到具有至少两个插头类元件的一组插头类元件，功率半导体芯片还包括金属片带状线(sheet metal strip line)，金属片带状线具有接收第一组插头类元件的一组开口，其中，金属片带状线中的这组开口和该组插头类元件建立了压入连接(可塑针脚(compliantpin)连接)。
还提供了一种功率半导体装置，包括具有至少一个图案化金属化层(patterned metallization layer)的半导体衬底。该装置还包括功率半导体芯片，该芯片设置在金属化层上，具有至少一个第一负载端子和至少一个第二负载端子，第一负载端子连接到第一组插头类元件，并且第二负载端子连接到第二组插头类元件。模块的其它电子组件包括至少一个第一负载端子和至少一个第二负载端子，第一负载端子连接到第三组插头类元件，第二负载端子连接到第四组插头类元件。第一金属片带状线包括接收第一组插头类元件的第一组开口和接收第三组插头类元件的第三组开口。第二金属片带状线包括接收第二组插头类元件的第二组开口和接收第四组插头类元件的第四组开口。金属片带状线中的开口和插头类元件建立了压入连接。金属片带状线平行设置，使得金属片带状线中的相应电流以相反方向流动。
组装功率半导体装置时，提供了电连接到功率半导体芯片的一组插头类元件。此外，提供了金属片带状线，它包括适用于接收该组插头类元件的一组开口。金属片带状线被定位为使得开口与插头类元件对齐。金属片带状线被压嵌到插头类元件上，使得插头类元件穿入开口中，由此建立了压入连接。
本文所述功率半导体装置提供了到功率半导体模块且在模块内的易于组装的低电感连接。
附图说明
参照以下附图和说明，可更好地理解本发明。图形中的组件不必按比例画出，而强调的重点是示出本发明的原理。另外，在图形中，类似的标号指定类似的部分。在图中：
图1是一个功率半导体装置的电路图，该半导体装置包括由整流器模块建立的第一功率半导体模块和由半桥模块建立的第二功率半导体模块，两个模块通过带状线连接到由DC连接电容器模块建立的控制模块；
图2是一个功率半导体装置的电路图，该半导体装置包括由整流器模块建立的第一功率半导体模块和由三相半桥模块建立的第二功率半导体模块，两个模块通过带状线连接到由DC连接电容器模块、控制单元和监视单元建立的控制模块；
图3a是一个功率半导体模块的垂直横截面视图，该半导体模块包括功率端子和承载功率半导体芯片的多层衬底，功率端子通过连接片电连接到功率半导体芯片；
图3b是图3a所示模块衬底上的顶视图；
图4是一个功率半导体装置和要连接到功率半导体模块的带状线的透视图，其中，模块的所有功率半导体芯片设置在连接片的一侧；
图5a是相互电连接并沿直线设置的多个功率端子的顶视图；
图5b是相互电连接的多个功率端子顶视图，其中，直线包括到功率端子，大于零的中距离；
图5c是相互电连接的多个功率端子的顶视图，其中，功率端子形成为具有圆形横截面和顶部尖头的粗线；
图6是功率半导体装置和要连接到功率半导体模块的带状线的透视图，其中，模块的功率半导体芯片设置在连接片的相对侧；
图7是功率半导体装置的横截面视图，半导体装置包括通过使用带状线相互串联的两个相同功率半导体模块；
图8a是由半桥模块建立的功率半导体模块顶视图，其中，相互电连接的功率端子沿直线设置；
图8b是图8a所示功率半导体模块沿线条B-B′的横截面视图；
图8c是图8a所示功率半导体模块沿线条C-C′的横截面视图；
图8d是容置盖附接到模块的图8a所示功率半导体模块的顶视图；
图8e是图8d所示功率半导体模块沿线条B-B′的横截面视图；
图9是通过使用连接片，电连接到衬底顶部金属层的功率端子横截面视图；
图10是功率半导体装置的透视图，半导体装置包括要通过使用带状线相互连接的功率半导体模块和DC连接电容器，功率半导体模块包括台阶，使得不同行的功率端子设置在不同层；
图11是一个DC连接电容器的横截面视图，电容器包括相互电连接的第一电容器电极和相互电连接的第二电容器电极，其中，电容器电极相互交替连续设置；
图12是包括一对卷绕电容器电极的DC连接电容器模块的横截面视图；
图13a和13b示出一个功率半导体模块，该模块包括半桥、电连接到模块电源端子的带状线和连接到模块相位输出的导电片；
图14a是包括弹簧夹的功率半导体模块容置盖的一部分的透视图；
图14b是图14a容置盖和弹簧夹的顶视图；
图14c是图14b的装置沿线条G-G′的横截面视图；
图15a是包括一个针脚的压入连接透视图，包括一个弹簧类元件***一个通孔；
图15b是图15a压入连接的垂直横截面视图；
图15c是图15b压入连接的水平横截面视图；
图16a是一个实心针脚的透视图；以及
图16b是根据图15c视图的压入连接水平横截面视图，其中不使用包括弹簧类元件的针脚，而是使用了实心针脚。
具体实施方式
图1是功率半导体装置的电路图，该半导体装置包括通过带状线装置连接到电容器模块110的第一半导体模块100和第二半导体模块120，带状线装置包括扁平导电片(本文也称为带状线)，如带状线11、12或导电片11、12。第一功率半导体模块100在本示例中是整流桥模块，包括六个二极管3、功率输入端子103、104、105和功率输出端子101、102。每个功率输入端子例如通过带状线连接到电源5的三相之一。在提供有通过电源端子121、122的电源的半桥配置中，第二功率半导体模块120包括诸如绝缘栅双极晶体管(IGBT)的两个可控功率半导体芯片1和续流二极管2。但是，也可应用其它可控功率半导体芯片，如MOSFET、晶闸管等。半桥包括能够由控制输入124控制的上半桥分支和能够由控制输入125控制的下半桥分支。包括DC连接电容器4的电容器模块110通过功率端子113、114连接到带状线11和12。半桥的输出连接到相位输出功率端子123。为增大安培容量，可并联多个例如相同的功率半导体芯片，而不只是一个可控功率半导体芯片1。
图2是具有多个例如相同的并联功率半导体芯片的其它示范功率半导体装置电路图。参照图2，第二功率半导体模块120包括三个半桥A、B、C，而不是只一个半桥。半桥A、B、C的上半桥分支能够通过控制端子124a、124b和124c控制，下半桥分支能够通过控制端子125a、125b和125c控制。半桥A、B、C分别连接到功率输出端子13a、13b和13c。包括控制电路131和驱动电路132a、132b、132c、133a、133b、133c的控制单元130连接到控制端子124a、124b、124c、125a、125b和125c。控制电路131适用于控制驱动电路132a、132b、132c、133a、133b、133c，以便例如接通或断开特定的可控功率半导体芯片1。控制单元130或其任何部分可集成在功率半导体模块120中，或如图2所示与模块120分开设置。
例如三相电动机M的负载150通过线路151a、151b、151c连接到模块120的相位输出端子13a、13b和13c。电流传感器141a、141b和141c分别耦合到线路151a、151b、151c。电流传感器141a、141b和141c检测线路151a、151b和151c中的电流。连接到控制电路131的监视单元140监视电流传感器141a、141b、141c的信号，并且允许控制电路131根据线路141a、141b、141c中的输出电流控制一个、一些或所有功率半导体芯片1。
图3a是功率半导体模块120的横截面视图，该功率半导体模块包括功率半导体芯片1、具有至少一个金属层21、23、25和设置在相邻金属层21、23、25之间的至少一个陶瓷层22、24的衬底20。衬底20的顶部金属层21具有相互近距离设置的部分21a、21b、21c、21d。附接到衬底的组件通过衬底20的金属层23、25互连。此外，为将不同的金属层或不同金属层的部分电互连，在陶瓷层22中设置了导孔26。视特定电路要求而定，可选地，底部金属层25可与顶部金属层21或金属层23中一个金属层电绝缘或两者都电绝缘。
可控功率半导体芯片1包括用于电连接的端接区1a、1b。此类端接区1a、1b例如可以是金属化层，如在芯片1的半导体主体上的铝和/或铜层，并提供到如可能出现的漏极区、源极区、集电极区、发射极区、阳极区或阴极区的电连接。如果器件包括垂直结构，则芯片1的端接区1a和1b可设置在芯片1的相对侧上。备选，如果器件包括横向结构，则芯片1的端接区1a和1b可设置在芯片1的相同侧上。
可控功率半导体芯片1通过焊料27连接到部分21a和21c，并通过接合线连接到部分21a和21b。除软钎焊外，硬钎焊、过渡液相软钎焊(transient liquid phase soldering)、导电胶合或使用银膏的低温连结技术(LTJT)也适用。
为从外部将模块120连接到例如电源、负载或DC连接电容器，模块包括能够从功率半导体模块120外部，即从模块120的容置外部(图中未示出)可到达和电接触的功率端子。此类功率端子包括作为压入连接一部分的插头类元件41、42、43，例如，作为公插头(male plug)或母插头(female plug)。在图3a中，插头类元件41、42、43电连接到功率半导体芯片1，接线片31、32和33电连接到部分21a、21c和21d。连接片31、32、33包括连结分支71、72、73，设置得相邻于面向衬底20的相应连结分支71、72、73。如图3a所示，功率端子41、42、43和相应的连接片31、32、33可选择在一个件中形成。连接片31、32、33例如可由扁平、有角度或弯曲的金属板，或由大量的金属线制成，并在平行于衬底底侧20b的剖面中包括例如超过5平方毫米的横截面面积。衬底20的底侧20b朝向背离功率半导体芯片1。绝缘片39设置在连接片31、32之间。
要将连结分支71、72和73电连接到芯片1的端接区1a或1b，相应的连结分支可直接连结到设置在背离衬底10的芯片1一侧上的端接区1a，或金属层21、23、25之一的一部分21a、21b、21c、21d。作为连结技术，可应用软钎焊、硬钎焊、过渡液相软钎焊、焊接、接合、导电胶合或使用银膏的低温连结技术(LTJT)。备选，连结分支71、72、73可直接压在相应端接区1a上或金属层21、23、25之一的相应部分21a、21b、21c、21d上以形成压力接触。
功率半导体模块120的外部连接通过扁平导电片11、12和13提供。导电片11和12相互平行延伸，距离例如为0.1毫米到5毫米，形成带状线装置15。带状线装置15可选择包括设置在导电片11与12之间的绝缘片19。为在外部连接相位输出功率端子43，应用了扁平导电片1。图3b是沿图3a线条A-A′到图3a所示模块120衬底20上的顶视图。正如可看到的一样，顶部金属层21的部分21a、21b、21c、21d相互间隔设置。
图4是功率半导体模块120的透视图。模块120包括衬底20、附接到衬底20的功率半导体芯片1、一端具有插头类元件41而另一端具有分支71的连接片31及一端具有插头类元件42而另一端具有连结分支72的连接片32。连接片31、32将连结分支71、72连接到相应的插头类元件41、42。通过功率半导体芯片1的适当设置，例如，在平行于第一直线g1延伸的一个或多个平行行中，以及在衬底20上金属层的适当结构，主电流大致在两个平行但相反的方向中流动。在图4中，电流的这些特定方向用箭头I表示。
在衬底20上，多个功率半导体芯片设置在衬底上。每个功率半导体芯片1包括第一端接区1a和第二端接区(设置在功率半导体芯片1的底侧，因此在图中未示出)。第一端接区1a和第二端接区可以为漏极端接区或源极端接区或集电极端接区或发射极端接区或阳极端接区或阴极端接区。所有第一端接区1a和所有第二端接区分别相互电连接。插头类元件41和插头类元件42每个的数目至少为二，以便一方面提供充分的机械稳定性，并防止电流在垂直于主电流方向的方向上流动(错流)。
在带状线装置15中，导电片11和12包括分别与功率端子41和42匹配的开口51和开口52(图4中未详细示出，因为它们隐藏在绝缘片19和导电片11下)。为将带状线装置15连接到具有插头类元件41、42的接线片31、32，开口51和52分别位于插头类元件41和42的上方，并且从上方向带状线装置15施力F从而将带状线装置15压向接线片31、32。这使得插头类元件41、42穿入相应的开口51、52中，从而形成压入连接。
正如从图4中可看到的一样，插头类元件41沿第一直线g1连续设置，而该直线例如平行于衬底20的底侧20b延伸。插头类元件42沿第二直线g2连续设置，该直线与第一直线g1平行。插头类元件41在范围b41内延伸，并且插头元件42在范围b42内延伸，其中两个范围具有基本相同的大小。在与直线g1、g2方向平行的方向上，导电片11和12分别在范围b201或b202内延伸。范围b201和b202相等，并且与范围b41、b42相等以避免错流。在图4中，带状线装置15右端连接到模块120。同样地，另一端也可包括如上所述要连接到例如电容器或其它功率半导体模块的其它电子组件(未示出)的开口51、52。为此，该其它电子组件可包括诸如插头类元件41、42的插头类元件。带状线装置15大致与衬底20平行，并且在垂直于衬底20平面的方向上具有到功率半导体芯片1的距离11。此外，在其它电子组件(未示出)旁设置的这行功率半导体芯片1在平行于衬底20平面且垂直于第一直线g1方向的方向上，具有到下部导电片12的开口52和在其它电子组件(未示出)相应插头类元件连接到带状线装置15时到该相应插头类元件的距离为12。
图5a和5c示出第一插头类元件41不同示例的顶视图。图5a示出图4的插头类元件41。第一功率端子41在范围b41内的直线g1上连续设置，相互之间的距离为d41，第一插头类元件与最后插头类元件之间的最大距离dmax。图5b示出一种装置，其中，第一功率端子41未设置在直线g1上，而是设置为垂直方向上到直线g1的距离为d1、d2、d3、d4和d5。d1、d2、d3、d4、d5的最大距离可使得它不会干扰平行于要连接到接线片31的带状线11的带状线12。图5c所示装置不同于图5b所示装置，表现在插头类元件41形成为具有圆状横截面和顶部尖头的粗线，以便易于将功率半导体模块连接到带状线。与图4的带状线相比，连接到图5c插头类元件41的导电片可包括圆孔开口。带状线11、12之间的距离取决于要实现的绝缘强度。平行设置的两个带状线11、12之间的距离越小，包括带状线11、12的带状线装置15的电感就越低。
在图4中，功率半导体模块120的所有功率半导体芯片1设置在接线片31、32的一侧。在图6中，功率半导体模块120的功率半导体芯片1设置在连接片31、32的两侧。参照图4和图6，电流I在衬底金属层中和在靠近衬底的区域中流动，其中，电流I大致平行于基本方向(cardinal direction)流动，并且错流被保持到最小。
图7是包括两个串联的相同功率半导体模块120的功率半导体装置横截面视图。每个功率半导体模块120例如包括功率半导体芯片1和连接至此的续流二极管2。每个模块120还包括例如由金属制成的底板10，底板被压在公共散热器9上，适当时在它们之间有导热浆料。每个模块120可还包括容置盖30，容置盖30与相应底板10一起形成模块120的容置。
图8a是功率半导体模块120的另一实施例的顶视图。模块120包括具有陶瓷层22和顶部金属层21的衬底20。顶部层21包括相互间隔的部分21a、21b、21c、21d、21e和21f。模块120包括具有上半桥分支和下半桥分支的半桥。上半桥分支包括七个功率半导体芯片1和七个续流二极管2，而上半桥分支的功率半导体芯片1和续流二极管2与相应的第二端接区1b和2b(图8a中未示出)导电连结到顶部金属层21的部分21b。相应地，下半桥分支的功率半导体芯片1和续流二极管2与相应的第二端接区1b和2b(图8a中未示出)导电连结到顶部金属层21的部分21e。在上半桥分支的功率半导模块1顶部上的第一端接区1a、1b和续流二极管2通过接合线28连接到顶部金属层21的部分21c。在下半桥分支的功率半导模块1顶部上的第一端接区1a、1b和续流二极管2通过接合线28连接到顶部金属层21的部分21d。上半桥分支中的功率半导体芯片1包括控制端接区，这些区设置在半导体芯片1的顶部，并且通过接合线28b电连接到顶部金属层21的部分21a。相应地，下半桥分支中的功率半导体芯片1包括控制端接区，这些区设置在半导体芯片1的顶部，并且经接合线28b电连接到顶部金属层21的部分21f。
功率半导体模块120还包括用于外部连接的功率输入端子141、142和功率输出端子143。功率输入端子141电连接到部分21d，功率输入端子42电连接到部分21b，并且相位输出端子143电连接到部分21c和21e。相应的电连接分别通过连接片31、32和33建立。接线片31、32和33包括连结分支71、72和73，这些分支分别直接连结到相应的部分21c、21b和21c/21e。备选地，特定的连结分支可直接连结到设置在功率半导体芯片1和/或续流二极管2顶部的端子区1a、2a。如软钎焊、导电胶合或使用银膏的低温连结技术(LTJT)的连结技术可适用。接线片31、32和33的部分61、62和63形成平行于衬底20延伸的母线。整个第一连结分支71包括到衬底20边缘的最小距离d71min，并且整个第二连结分支72包括到衬底20边缘的最小距离d72min。整个第三连结分支73包括到衬底20边缘的最小距离d73min。为电连接功率半导体芯片1的控制端接区，提供了连接到部分21a的端子64和连接到部分21f的端子65。
图8b和8c是沿图8a的线条B-B′和C-C′的横截面视图。在这些视图中，也分别可看到功率半导体1和续流二极管2的第二端子区1b、2b。图8d是图8a模块的顶视图。但是，图8d中示出了附接到模块120的容置盖30。容置盖30包括有开口，而功率端子41、42和43及控制端子64、65通过这些开口在容置盖30上方突出。图8e中可看到端子41、42、43、64、65的突出，该图是沿图8d线条B-B′的模块120的横截面视图。
图9示出连结分支71和将连结分支71连接到功率端子41的接线片31。分支71直接软钎焊到衬底20的顶部金属层，衬底20包括金属层21、23和设置在金属层21与23之间的陶瓷层22。
图10示出一个功率半导体装置，它包括要连接到带状线装置15的功率半导体模块100。功率半导体模块100可包括三相整流器模块。用于控制模块100的控制单元130附接到容置盖30外部。功率半导体模块100的衬底与控制单元相对设置。模块100包括插头类元件41和插头类元件42，作为模块100的端子以便其连接到具有插头类元件44、45的DC连接模块110(如图2所示)。插头类元件45和插头类元件46分别相关直线g4或直线g5设置，两条直线相关线条g1和g2均平行。
如上已经概述的一样，带状线装置15包括相互间隔的导电金属片11、12和设置在导电金属片11、12之间的绝缘层19。导电金属片11连接插头类元件42和44、导电金属片12从而电连接功率端子41和45。为便于组装和提供改进的绝缘，功率半导体模块100的容置盖30包括台阶，以便插头类元件41与插头类元件42位于不同的层。插头类元件44和插头类元件45可以如上相关功率端子41、42所述的类似方式设置。在扁平导电片11和12中提供的开口51和52与相应的插头类元件41、42、44、45一起建立了如上所述的压入接触。
模块还包括具有插头类元件43a、43b、43c的三相输出功率端子。金属片151a、151b和151c通过如上所述的压入接触，电连接到相应的三相输出功率端子43a、43b和43c。
在此类装置中，装置的电感随着通过功率半导体模块100和带状线11与12的电流上升而按比例降低。如果Imax是通过功率半导体模块100的最大电流，它可以是功率半导体模块100标称(额定)电流的两倍，则装置的电感L可能小于例如10-5Vs/Imax。电感L主要由如图4中所述作为在功率半导体模块100与电容器110之间距离11与12之和的距离1确定：
1＝11+12。
比率d/b的上限例如可计算如下，其中，d是带状导电片11与12之间的距离，b是导电片的宽度，例如，在图4中，b＝b42，在图6中，b＝b201＝b202：
d b < 10 - 5 &CenterDot; V &CenterDot; s I max &CenterDot; l &CenterDot; &mu; 0
μ0＝4·Pi·10-7V·s/(A·m)是真空磁导率，其中，Pi＝3.1415...。
图11是如参照图1和2所述电容器模块110的横截面视图。模块110包括电连接到插头类元件44的电容器电极115和连接到插头类元件45的电容器电极116，其中，电容器电极115、116交替连续设置。容置29的内部可装有介电质119，例如硅树脂或环氧树脂。另一个电容器模块110在图12中示出，其中，第一电极115和第二电极116卷绕在一起。
图13a和13b示出了功率半导体模块120，其中，图13b是沿图13a所示顶视图的线条F-F’的模块120的横截面视图。在模块120中，大致在导电片11和12中平行流动，但具有相反方向的电流I11和I12通过叠加产生了结果电流I120。
连接到相位输出端子43的导电片13中的电流I13，其基本方向大致与电流I120基本方向垂直。
图14a是功率半导体模块容置盖30一部分的透视图。大致沿直线设置的多个功率端子51延伸通过容置盖30。功率端子包括弹簧夹51，每个弹簧夹包括两个弹簧分支51a、51b。每个弹簧夹51通过使用连接片31电连接到连结分支71。图14b是容置盖30的顶视图，在图中，带状线装置的导电片11被推压，开口51被推向容置盖30，使得开口51与弹簧夹51区配。图14c是沿图14b线条G-G’的横截面视图。在开口51完全推压在弹簧夹41上后，功率半导体模块通过带状线装置的几乎整个宽度电连接到导电片，因此，减少了错流。
作为图14a-14c所示弹簧夹连接的备选，其它压入连接也适用，例如包括叉型结构、眼型结构、绞型结构(twisted structure)、栓型结构或铆钉型结构。不同于上述装置，薄型(low profile)模块也可使用，其中，功率端子设置在功率半导体模块容置的相对侧壁上。
例如，通过将尺寸大的针脚(pin)按压到钻通孔中，形成在钻通孔与连接器针脚之间的压入连接。基本特征是针脚的横截面必须大于孔的直径。这在针脚与钻通孔处形成了材料重叠，而这必须通过针脚或孔的变形形成。变形可以是弹性或非弹性的。针脚41的上侧可以是例如图4所示接线片31的一部分，或者可连接到该接线片。
图15a示出在可塑针脚41与带状线11的通孔51之间的压入连接示例。针脚41包括形成弹簧类元件的两个分路41a、41b。在***通孔51时，分路41a、41b被弹性压缩。由于压缩原因，正如从图15b可看到的一样，张力F影响了通孔51的内侧壁，并在针脚与通孔51之间建立了紧密的连接。通孔51可选择通过眼状物11a加固。从图15c的水平横截面视图中，可以看到由于由分路41a、41b形成的弹簧类元件的弹性原因，在通孔51的内侧壁51a将不存在显著变形。
备选，可使用例如图16a所示的实心针脚，而不是可塑针脚。要在针脚41与带状线11之间形成紧密连接，实心针脚41使通孔51的侧壁51a变形，这可从图16b的水平横截面视图中看到。
虽然实现本发明的各种实施例已公开，但本领域的技术人员将明白，在不脱离本发明精神和范围的情况下，可进行将实现本发明一些优点的各种更改和修改。本领域的技术人员将明白，可适当地替代使用执行相同的功能的其它组件。对本发明概念的此类修改将涵盖在随附权利要求书内。

Claims (25)

1.一种功率半导体装置，包括
功率半导体芯片，电连接到具有至少两个插头类元件的第一组插头类元件；以及
金属片带状线，包括接收所述一组插头类元件的一组开口；
其中所述金属片带状线中的所述一组开口和所述一组插头类元件建立了压入连接。
2.如权利要求1所述的功率半导体装置，还包括具有承载所述功率半导体芯片的至少一个金属化层的衬底，其中所述一组插头类元件安装在所述金属化层上。
3.如权利要求1所述的功率半导体装置，其中所述插头类元件包括针脚型结构、叉型结构、眼型结构、栓型结构或铆钉型结构。
4.如权利要求1所述的功率半导体装置，其中所述组的所述插头类元件沿直线设置。
5.如权利要求2、3或4所述的功率半导体装置，其中所述插头类元件直接软钎焊、焊接、接合或导电胶合到所述衬底的部分所述金属化层。
6.如权利要求2所述的功率半导体装置，其中所述插头类元件由在接线片一端的梳状结构形成，其中所述接线片软钎焊、焊接、接合或导电胶合到所述衬底的部分所述金属化层。
7.如权利要求1所述的功率半导体装置，还包括具有至少两个插头类元件的其它组插头状元件、在所述衬底上设置至少一个其它功率半导体芯片，其中每个功率半导体芯片包括第一负载端子和第二负载端子，每个所述第一负载端子连接到所述一组插头类元件，并且每个所述第二负载端子连接到其它组插头类元件。
8.如权利要求7所述的功率半导体装置，还包括其它金属片带状线，所述其它金属片带状线包括接收所述其它组插头类元件的其它组开口，所述其它组开口和所述其它组插头类元件建立压入连接，其中所述第一金属片带状线和所述其它金属片带状线平行设置。
9.如权利要求8所述的功率半导体装置，其中所述一个金属片带状线和所述其它金属片带状线通过绝缘片分隔。
10.如权利要求9所述的功率半导体装置，其中所述一个金属片带状线、所述其它金属片带状线和所述绝缘片被设置并施加有电流，使得所述金属片带状线中的相应电流以相反方向流动。
11.如权利要求10所述的功率半导体装置，其中所述一个金属片带状线、所述其它金属片带状线和所述绝缘片被设置，使得它们的结果电感低于单个金属片带状线每一个的电感。
12.如权利要求7所述的功率半导体装置，其中功率半导体芯片包括单个功率晶体管、晶体管半桥、三相桥或续流二极管。
13.如权利要求1所述的功率半导体装置，还包括其它电子组件，所述其它电子组件包括电连接到第三组插头类元件的第一负载端子，其中所述第一金属片带状线包括接收所述第三组插头类元件的第三组开口，因而在所述半导体芯片与所述其它电子组件之间建立了压入连接。
14.如权利要求13所述的功率半导体装置，其中所述其它电子组件是阻塞电容器。
15.如权利要求13所述的功率半导体装置，其中所述其它电子组件是用于所述功率半导体芯片的控制电路。
16.一种功率半导体装置，包括
半导体衬底，具有至少一个图案化金属化层；
功率半导体芯片，设置在所述金属化层上，并包括至少一个第一负载端子和至少一个第二负载端子，所述第一负载端子连接到第一组插头类元件，所述第二负载端子连接到第二组插头类元件；
其它电子组件，具有至少一个第一负载端子和至少一个第二负载端子，所述第一负载端子连接到第三组插头类元件，所述第二负载端子连接到第四组插头类元件；
第一金属片带状线，包括接收所述第一组插头类元件的第一组开口和接收所述第三组插头类元件的第三组开口；
第二金属片带状线，包括接收所述第二组插头类元件的第二组开口和接收所述第四组插头类元件的第四组开口；其中
所述金属片带状线中的所述开口和所述插头类元件建立了压入连接；以及
所述金属片带状线平行设置并施加有电流，使得所述金属片带状线中的相应电流以相反方向流动。
17.如权利要求16所述的功率半导体装置，其中所述其它电子组件是阻塞电容器。
18.如权利要求16所述的功率半导体装置，其中所述其它电子组件包括承载至少一个其它半导体芯片的其它衬底，所述其它半导体芯片包括分别连接到所述第三组插头类元件和所述第四组插头类元件的第一负载端子和第二负载端子。
19.如权利要求16所述的功率半导体装置，其中所述插头类元件包括针脚型结构、叉型结构、眼型结构、栓型结构或铆钉型结构。
20.如权利要求16所述的功率半导体装置，其中所述插头类元件软钎焊、焊接、接合或导电胶合到所述衬底的部分所述金属化层。
21.如权利要求16所述的功率半导体装置，其中所述插头类元件由在一端包括梳状结构的接线片形成，其中所述接线片软钎焊、焊接、接合或导电胶合到所述衬底的部分所述金属化层。
22.如权利要求16所述的功率半导体装置，包括至少一个其它功率半导体芯片，所述其它功率半导体芯片设置在所述金属化层上并包括至少一个第一负载端子和至少一个第二负载端子，所述第一负载端子连接到所述第一组插头类元件，所述第二负载端子连接到所述第二组插头类元件；其中
设置在所述金属化层上的所述功率半导体芯片在至少一个直线行上设置，每个所述至少一个直线行在第一方向上延伸；
所述其它电子组件设置在垂直于所述第一方向的第二方向上；
所述第一金属片带状线和所述第二金属片带状线以所述第二方向在所述功率半导体模块区域内扩展，并且平行于所述功率半导体芯片的所述行延伸。
23.如权利要求16所述的功率半导体装置，其中所述金属带状线由绝缘体分隔。
24.一种组装功率半导体装置的方法，包括：
提供电连接到功率半导体芯片的一组插头类元件；
提供金属片带状线，所述金属片带状线包括配置为接收所述一组插头类元件的一组开口；
定位所述金属片带状线，使得所述开口与所述插头类元件对齐；
将所述金属片带状线压到所述插头类元件上，使得所述插头类元件穿入所述开口中，因而建立了压入连接。
25.如权利要求24所述的方法，包括：
提供包括图案化金属化层的衬底；
将所述功率半导体芯片和所述第一组插头类元件安装到所述金属化层上，以提供电连接到功率半导体芯片的一组插头类元件。
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US7791208B2 (en) 2010-09-07
DE102008049193A1 (de) 2011-01-20

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