CN101233613A - 具有改进的机械可靠性和热可靠性的半导体装置 - Google Patents

具有改进的机械可靠性和热可靠性的半导体装置 Download PDF

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CN101233613A
CN101233613A CNA2006800282088A CN200680028208A CN101233613A CN 101233613 A CN101233613 A CN 101233613A CN A2006800282088 A CNA2006800282088 A CN A2006800282088A CN 200680028208 A CN200680028208 A CN 200680028208A CN 101233613 A CN101233613 A CN 101233613A
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copper
nickel
alloy
layer
ashbury metal
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CN100565859C (zh
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阿野一章
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Texas Instruments Inc
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Texas Instruments Inc
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Abstract

本发明提供一种具有由特定区域(202)的铜接触垫(210)和在垫区域上以冶金学方式附接到所述铜垫的合金层(301)制成的焊料接点的装置。所述合金层含有包括Cu6Sn5金属间化合物的铜/锡合金和包括(Ni，Cu)6Sn5金属间化合物的镍/铜/锡合金。包括锡的焊料元件(308)在所述垫区域上以冶金学方式附接到所述合金层。在回流工序之后没有剩下原始薄镍层的任何部分。铜/锡合金有助于改进跌落测试性能，镍/铜/锡合金有助于改进寿命测试性能。

Description

具有改进的机械可靠性和热可靠性的半导体装置
技术领域
本发明涉及具有镀铜接触垫的半导体装置且在加速应力测试下解决其可靠性。
背景技术
在用于表面安装组合件的半导体装置封装中，球栅阵列(BGA)封装越来越普遍。其可用于许多消费者产品并有助于当前的小型化趋势。分布在整个封装区域上的焊料元件提供大量输入/输出端子。另外，焊料元件提供具有非常低的故障率(“6西格玛处理”)的板附接技术的机会。
然而，最近存在影响BGA封装的挑战性要求。仅举一些例子来说：越来越要求焊料元件不含铅(出于环境考虑)；这个要求造成冶金学挑战。接触垫将铜作为其基底金属；这种选择对焊料元件形成冶金学接口挑战。封装组件的特征尺寸不断减小对以可接受的残存率通过加速应力测试形成新的障碍；举例来说，在高温下且在潮湿环境中的加速寿命测试变得更具挑战性。含有BGA封装的装置产品正散布到越来越多的消费者应用；通常，这些应用形成更严格或甚至全新的验收测试。作为最近的实例，无线电话应用引发对于经受住电话跌落测试的要求，以便证实BGA封装的焊料接点在测试之后仍是可靠的。
发明内容
申请人认识到需要一种灵活但成本低且稳固的方法来制造具有焊料接点的装置(尤其是半导体封装)，使得接点给予所述装置应用专有的机械和热可靠性且所述装置将通过产品专项测试。
本发明的一个实施例是一种具有由特定区域的接触垫和在垫区域上以冶金学方式附接到接触垫的合金层制成的焊料接点的装置。接触垫的表面具有铜。合金层在接触区域上包括铜/锡合金和铜/镍/锡合金。铜/锡合金包括Cu6Sn5金属间化合物。铜/镍/锡合金包括(Ni，Cu)6Sn5金属间化合物。包括锡的焊料元件在垫区域上以冶金学方式附接到合金层。
以铜/锡合金为主的第一合金有助于将跌落测试性能改进到由具有铜垫的焊料接点实现的最佳水平。以含镍合金为主的第二合金通过减缓老化条件而有助于改进寿命测试性能。
一种形成上述实施例中的合金区的所需数目、分布和厚度的优选方法是在铜接触垫上方沉积具有预定厚度的薄镍层，将含锡焊料元件附接到镍层，且根据选定时间-温度曲线回流焊料。
在本发明的另一实施例中，合金层可包括金或钯。
附图说明
图1说明具有用于外部连接的焊料元件的球栅阵列(BGA)型半导体装置的示意性横截面图。
图2是衬底的部分“A”(图1)的示意性横截面图，其展示焊料元件附接之前的接触垫的细节。
图3是衬底的部分“A”(图1)的示意性横截面图，其展示焊料元件回流之后的接触垫的细节。
图4是焊料接点的部分“B”(图3)的示意性横截面图。
图5说明具有薄镍层的铜触点的时间-温度曲线的实例，其用以回流锡焊料且形成铜/锡和镍/锡、镍/铜/锡合金区。
具体实施方式
图1示意性说明球栅阵列(BGA)半导体装置大家族中的代表。半导体芯片101通过使用用于机械附接的芯片附接材料103和用于电连接的接合线104而组装在衬底102上。组合件通常囊封在模制化合物105中。
衬底102具有一个或一个以上图案化金属层以用于内部互连(图1中未展示)，以尤其在线脚接合点106与接触垫107之间形成连接线以用于外部连接。金属层由绝缘层分开。焊料元件108附接到接触垫107。这种焊料附接在各种测试和使用条件下的可靠性值得特殊考虑。
图2和图3更详细地展示装置的部分“A”。图2说明焊料元件208回流之前的装置接触垫，且图3说明回流工序之后的装置接触垫。在图2中，衬底102具有绝缘表面层201，其通常称为焊料掩模。已经在焊料掩模201中打开具有宽度202的窗口，其暴露衬底的互连涂敷金属210的一部分，且因此界定接触区域。涂敷金属210由铜制成，且所暴露铜的区域由焊料掩模窗口的宽度202确定。
在所暴露铜的区域上方沉积镍层211；另外，贵金属(例如金或钯)层212沉积在所述镍层上方。在此实施例中，镍层的厚度在约0.01与0.3μm之间；优选厚度范围为0.12±0.04μm。金层的厚度在约0.1与1.0μm之间；优选厚度范围为0.5±0.25μm。
焊料回流元件208含有锡；另外，其可含有选自由铅、银、铋、铟、锌、铜、镍和锑组成的群组的金属中的一者或一者以上。对于本实施例中的镍层厚度来说，回流元件208中的锡和其它回流金属的量比镍的量大得多。
如图2展示，衬底102在与接触垫202相对的衬底表面上具有一个或一个以上垫220；这些垫用作将连接线230接合到半导体芯片接合垫的接合垫。由于线230优选由金制成且垫220优选供金线脚231使用，因而垫220优选由包括铜层221、镍层222和金层223的层堆叠制成。
图3说明焊料元件208回流之后的装置接触垫。210是铜线，其中接触垫由焊料抗蚀剂201中具有宽度202的窗口暴露。宽度202界定铜接触区域。
在整个区域上以冶金学方式附接到铜的是合金层301，其包括锡、铜和镍。图4放大说明图3的区域“B”。为了实现最佳的可靠性性能，所述合金应当占据接触区域中的整个沉积镍层。以冶金学方式附接到合金层301的是以锡作为其主要成分的回流元件308。
在图4中，在衬底102的绝缘部分上的是铜层210在铜接触区域中的一部分。以冶金学方式附接到铜层210的是合金层301，且以冶金学方式附接到合金层301的是回流元件308的一部分，其主要含有锡。
合金层301包含铜/锡合金和铜/镍/锡合金。铜/锡合金包含较高百分比的Cu6Sn5金属间化合物，通常具有扇形轮廓。镍/铜/锡合金包含较高百分比的(Ni，Cu)6Sn5金属间化合物，其微晶通常散裂到合金层中。
在具有金作为合金组分的实施例中，合金包含较高百分比的(Cu，Ni，Au)6Sn5金属间化合物。使用后者金属间化合物，金属层的厚度优选处于2.0与3.0μm之间。
含镍合金已经从原始镍层中消耗掉所有可用镍，以使得在合金成形(回流)工序之后不会剩余镍层的任何部分。
可通过选择两个参数值来产生铜/锡合金与镍/铜/锡合金之间的预定比率：镍层厚度和回流工序的时间-温度曲线。0.1±0.05μm厚度范围内的镍层的优选时间-温度序列501的实例在图5中再现(以℃为单位测量温度，以分钟为单位测量时间)。如可见，曲线具有约1到2分钟的约130与170℃之间的预热范围501和约1/4到3/4分钟的高于230℃的高温范围502。
本发明人所作的定量研究已经表明铜/锡合金有助于将已组装装置的跌落测试性能改进到具有铜垫的焊料接点所实现的最佳水平。另一方面，从约0.1μm的开始镍层厚度获得的含镍合金通过减缓老化条件使得装置特征在预期的装置使用期限中保持近似恒定来改进成品装置特征的寿命测试性能。
在本发明的其它实施例中，合金层301连同回流的锡焊料元件308可包括熔化的贵金属，例如金或钯。图2中展示为沉积层的贵金属在回流工序步骤中熔化。
尽管已经参看说明性实施例描述了本发明，但不希望在限制性意义上解释此描述内容。通过参看所述描述内容，所属领域的技术人员将容易了解所述说明性实施例的各种修改和组合以及本发明的其它实施例。举例来说，可采用更薄的镍层——恰好足以防护铜不受氧化的镍。因此，希望所主张的发明涵盖任何此类修改。

Claims (13)

1.一种集成电路装置，其包含：
半导体芯片；
衬底，在其上组装所述芯片，所述衬底具有用于外部连接的触点；
每一触点包括：
具有铜的接触区域；
覆盖所述接触区域的合金层，所述合金层包括铜/锡合金和铜/镍/锡合金，所述合金层以冶金学方式附接到所述铜区域且大致没有非合金镍区；以及
包含锡的回流元件，其以冶金学方式附接到所述合金层。
2.根据权利要求1所述的装置，其中所述铜/锡合金包括Cu6Sn5金属间化合物。
3.根据权利要求1所述的装置，其中所述铜/镍/锡合金包括(Ni，Cu)6Sn5金属间化合物。
4.根据权利要求1所述的装置，其中所述合金层进一步包含金。
5.根据权利要求4所述的装置，其中主要合金包含(Cu，Ni，Au)6Sn5金属间化合物。
6.根据权利要求5所述的装置，其中所述金属间化合物(Cu，Ni，Au)6Sn5的厚度处于约2.0与3.0μm之间。
7.根据权利要求1所述的装置，其中所述合金层包含钯。
8.根据权利要求1所述的装置，其中所述回流元件进一步包含选自由铅、银、铋、铟、锌、铜、镍和锑组成的群组中的一种或一种以上金属。
9.根据权利要求1所述的装置，其中所述衬底触点由焊料掩模中的窗口界定。
10.根据权利要求1所述的装置，其中所述回流元件跨越整个接触区域附接到所述合金层区域。
11.根据权利要求1所述的装置，其中铜/镍/锡合金邻近于所述铜接触区域。
12.根据权利要求11所述的装置，其进一步包含从附近的所述铜接触区域散裂的铜/镍/锡合金。
13.根据权利要求11所述的装置，其中所述铜/锡合金邻近于所述铜接触区域附近的所述铜/镍/锡合金。
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