CN101009322B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN101009322B
CN101009322B CN200710085012.9A CN200710085012A CN101009322B CN 101009322 B CN101009322 B CN 101009322B CN 200710085012 A CN200710085012 A CN 200710085012A CN 101009322 B CN101009322 B CN 101009322B
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CN
China
Prior art keywords
tft
channel
film
luminescent device
oled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN200710085012.9A
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English (en)
Chinese (zh)
Other versions
CN101009322A (zh
Inventor
宇田川诚
早川昌彦
小山润
纳光明
安西彩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38697587&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN101009322(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP2002010766A external-priority patent/JP4149168B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101009322A publication Critical patent/CN101009322A/zh
Application granted granted Critical
Publication of CN101009322B publication Critical patent/CN101009322B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • Y02B20/36—

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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
CN200710085012.9A 2001-11-09 2002-11-09 发光器件 Expired - Lifetime CN101009322B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001344671 2001-11-09
JP344671/2001 2001-11-09
JP10766/2002 2002-01-18
JP2002010766A JP4149168B2 (ja) 2001-11-09 2002-01-18 発光装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB021575835A Division CN1311562C (zh) 2001-11-09 2002-11-09 发光器件

Publications (2)

Publication Number Publication Date
CN101009322A CN101009322A (zh) 2007-08-01
CN101009322B true CN101009322B (zh) 2012-06-27

Family

ID=38697587

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200710085012.9A Expired - Lifetime CN101009322B (zh) 2001-11-09 2002-11-09 发光器件

Country Status (2)

Country Link
JP (19) JP5111196B2 (ja)
CN (1) CN101009322B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101600100B1 (ko) 2009-11-27 2016-03-04 가부시키가이샤 제이올레드 발광 표시 장치
JP5508301B2 (ja) * 2011-01-18 2014-05-28 パナソニック株式会社 発光表示装置
TWI713943B (zh) 2013-09-12 2020-12-21 日商新力股份有限公司 顯示裝置及電子機器
KR102238641B1 (ko) * 2014-12-26 2021-04-09 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판
US10991835B2 (en) * 2018-08-09 2021-04-27 Array Photonics, Inc. Hydrogen diffusion barrier for hybrid semiconductor growth
CN113381286B (zh) * 2021-06-02 2023-03-03 山东大学 离子束增强腐蚀制备晶体薄膜的方法

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JP4229513B2 (ja) * 1999-03-10 2009-02-25 三洋電機株式会社 アクティブ型ｅｌ表示装置
JP2000347624A (ja) * 1999-03-31 2000-12-15 Seiko Epson Corp エレクトロルミネセンス表示装置
JP4246845B2 (ja) * 1999-04-22 2009-04-02 Ｔｄｋ株式会社 有機ｅｌ素子の駆動装置および有機ｅｌ表示装置
JP4337171B2 (ja) * 1999-06-14 2009-09-30 ソニー株式会社 表示装置
JP4877675B2 (ja) * 1999-06-28 2012-02-15 株式会社半導体エネルギー研究所 電気光学装置の作製方法
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JP2001109405A (ja) * 1999-10-01 2001-04-20 Sanyo Electric Co Ltd Ｅｌ表示装置
JP2001111053A (ja) * 1999-10-04 2001-04-20 Sanyo Electric Co Ltd 薄膜トランジスタ及び表示装置
JP3548063B2 (ja) * 1999-10-20 2004-07-28 三洋電機株式会社 アクティブマトリクス型表示装置
JP2001195016A (ja) * 1999-10-29 2001-07-19 Semiconductor Energy Lab Co Ltd 電子装置
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JP2001147659A (ja) * 1999-11-18 2001-05-29 Sony Corp 表示装置
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US5981970A (en) * 1997-03-25 1999-11-09 International Business Machines Corporation Thin-film field-effect transistor with organic semiconductor requiring low operating voltages
US6307322B1 (en) * 1999-12-28 2001-10-23 Sarnoff Corporation Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage

Non-Patent Citations (1)

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Also Published As

Publication number Publication date
JP2018106182A (ja) 2018-07-05
JP6608008B2 (ja) 2019-11-20
JP2014042075A (ja) 2014-03-06
JP2008235912A (ja) 2008-10-02
JP6383507B2 (ja) 2018-08-29
JP6053067B2 (ja) 2016-12-27
JP2019082698A (ja) 2019-05-30
JP5784209B2 (ja) 2015-09-24
JP5459918B2 (ja) 2014-04-02
JP2018097383A (ja) 2018-06-21
JP2019071431A (ja) 2019-05-09
JP2014099635A (ja) 2014-05-29
JP2015072486A (ja) 2015-04-16
JP2018197868A (ja) 2018-12-13
JP5679535B2 (ja) 2015-03-04
JP7032625B2 (ja) 2022-03-09
JP2014082499A (ja) 2014-05-08
JP5917612B2 (ja) 2016-05-18
CN101009322A (zh) 2007-08-01
JP2015194759A (ja) 2015-11-05
JP2014222351A (ja) 2014-11-27
JP6514286B2 (ja) 2019-05-15
JP2012195596A (ja) 2012-10-11
JP5568678B2 (ja) 2014-08-06
JP2016136641A (ja) 2016-07-28
JP2021005554A (ja) 2021-01-14
JP6622893B2 (ja) 2019-12-18
JP6306808B1 (ja) 2018-04-04
JP2021013023A (ja) 2021-02-04
JP2015179853A (ja) 2015-10-08
JP2013033280A (ja) 2013-02-14
JP5111196B2 (ja) 2012-12-26
JP2018019084A (ja) 2018-02-01
JP6096832B2 (ja) 2017-03-15

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