CN100483697C - 制造无引线的多管芯承载体用的结构和方法 - Google Patents
制造无引线的多管芯承载体用的结构和方法 Download PDFInfo
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- CN100483697C CN100483697C CNB028127153A CN02812715A CN100483697C CN 100483697 C CN100483697 C CN 100483697C CN B028127153 A CNB028127153 A CN B028127153A CN 02812715 A CN02812715 A CN 02812715A CN 100483697 C CN100483697 C CN 100483697C
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- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H01L2924/01—Chemical elements
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- H01L2924/01042—Molybdenum [Mo]
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- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10162—Shape being a cuboid with a square active surface
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (30)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/894,728 US6867493B2 (en) | 2000-11-15 | 2001-06-28 | Structure and method for fabrication of a leadless multi-die carrier |
US09/894,728 | 2001-06-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1520611A CN1520611A (zh) | 2004-08-11 |
CN100483697C true CN100483697C (zh) | 2009-04-29 |
Family
ID=25403454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028127153A Expired - Lifetime CN100483697C (zh) | 2001-06-28 | 2002-06-27 | 制造无引线的多管芯承载体用的结构和方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6867493B2 (zh) |
EP (1) | EP1407641A4 (zh) |
JP (2) | JP2004537849A (zh) |
KR (1) | KR100579621B1 (zh) |
CN (1) | CN100483697C (zh) |
TW (1) | TW565917B (zh) |
WO (1) | WO2003003797A2 (zh) |
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-
2001
- 2001-06-28 US US09/894,728 patent/US6867493B2/en not_active Expired - Lifetime
-
2002
- 2002-06-27 KR KR1020037017039A patent/KR100579621B1/ko active IP Right Grant
- 2002-06-27 JP JP2003509827A patent/JP2004537849A/ja active Pending
- 2002-06-27 WO PCT/US2002/020515 patent/WO2003003797A2/en active Application Filing
- 2002-06-27 CN CNB028127153A patent/CN100483697C/zh not_active Expired - Lifetime
- 2002-06-27 EP EP02742334A patent/EP1407641A4/en not_active Ceased
- 2002-06-28 TW TW091114421A patent/TW565917B/zh not_active IP Right Cessation
-
2010
- 2010-11-08 JP JP2010249494A patent/JP2011082533A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
TW565917B (en) | 2003-12-11 |
CN1520611A (zh) | 2004-08-11 |
US20020149102A1 (en) | 2002-10-17 |
JP2011082533A (ja) | 2011-04-21 |
EP1407641A2 (en) | 2004-04-14 |
US6867493B2 (en) | 2005-03-15 |
EP1407641A4 (en) | 2010-05-12 |
KR100579621B1 (ko) | 2006-05-12 |
WO2003003797A2 (en) | 2003-01-09 |
WO2003003797A3 (en) | 2003-06-19 |
KR20040020945A (ko) | 2004-03-09 |
JP2004537849A (ja) | 2004-12-16 |
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