GB0303162D0 - Trench-gate semiconductor devices and the manufacture thereof - Google Patents
Trench-gate semiconductor devices and the manufacture thereofInfo
- Publication number
- GB0303162D0 GB0303162D0 GBGB0303162.2A GB0303162A GB0303162D0 GB 0303162 D0 GB0303162 D0 GB 0303162D0 GB 0303162 A GB0303162 A GB 0303162A GB 0303162 D0 GB0303162 D0 GB 0303162D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- trench
- manufacture
- semiconductor devices
- gate semiconductor
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IB2003/002230 WO2003103036A1 (en) | 2002-05-31 | 2003-05-21 | Trench-gate semiconductor device and method of manufacturing |
JP2004510022A JP2005528796A (en) | 2002-05-31 | 2003-05-21 | Trench gate semiconductor device and manufacturing method |
EP03727795A EP1514300A1 (en) | 2002-05-31 | 2003-05-21 | Trench-gate semiconductor device and method of manufacturing |
KR10-2004-7019310A KR20040111710A (en) | 2002-05-31 | 2003-05-21 | Trench-gate semiconductor device and method of manufacturing |
US10/515,749 US7232726B2 (en) | 2002-05-31 | 2003-05-21 | Trench-gate semiconductor device and method of manufacturing |
CNB038121794A CN100437942C (en) | 2002-05-31 | 2003-05-21 | Trench-gate semiconductor device and method of manufacturing |
AU2003232995A AU2003232995A1 (en) | 2002-05-31 | 2003-05-21 | Trench-gate semiconductor device and method of manufacturing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0212564.9A GB0212564D0 (en) | 2002-05-31 | 2002-05-31 | Trench-gate semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
GB0303162D0 true GB0303162D0 (en) | 2003-03-19 |
Family
ID=9937768
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0212564.9A Ceased GB0212564D0 (en) | 2002-05-31 | 2002-05-31 | Trench-gate semiconductor device |
GBGB0228809.0A Ceased GB0228809D0 (en) | 2002-05-31 | 2002-12-11 | Trench-gate semiconductor devices |
GBGB0303162.2A Ceased GB0303162D0 (en) | 2002-05-31 | 2003-02-12 | Trench-gate semiconductor devices and the manufacture thereof |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0212564.9A Ceased GB0212564D0 (en) | 2002-05-31 | 2002-05-31 | Trench-gate semiconductor device |
GBGB0228809.0A Ceased GB0228809D0 (en) | 2002-05-31 | 2002-12-11 | Trench-gate semiconductor devices |
Country Status (3)
Country | Link |
---|---|
KR (2) | KR20040111710A (en) |
AT (1) | ATE528799T1 (en) |
GB (3) | GB0212564D0 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7442609B2 (en) * | 2004-09-10 | 2008-10-28 | Infineon Technologies Ag | Method of manufacturing a transistor and a method of forming a memory device with isolation trenches |
US7319256B1 (en) * | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
KR100741919B1 (en) * | 2006-09-12 | 2007-07-24 | 동부일렉트로닉스 주식회사 | Trench type mos transistor including pn junction gate electrode, and manufacturing method thereof |
JP5138274B2 (en) | 2007-05-25 | 2013-02-06 | 三菱電機株式会社 | Semiconductor device |
KR101275458B1 (en) * | 2011-12-26 | 2013-06-17 | 삼성전기주식회사 | Semiconductor device and fabricating method thereof |
DE102016114229B3 (en) | 2016-08-01 | 2017-12-07 | Infineon Technologies Austria Ag | TRANSISTOR COMPONENT COMPRISING A FIELD ELECTRODE COMPRISING TWO LAYERS AND ITS MANUFACTURING METHOD |
KR102246501B1 (en) * | 2017-12-29 | 2021-04-30 | 수 조우 오리엔탈 세미컨덕터 콤퍼니 리미티드 | Semiconductor power device |
US11031478B2 (en) | 2018-01-23 | 2021-06-08 | Infineon Technologies Austria Ag | Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture |
-
2002
- 2002-05-31 GB GBGB0212564.9A patent/GB0212564D0/en not_active Ceased
- 2002-12-11 GB GBGB0228809.0A patent/GB0228809D0/en not_active Ceased
-
2003
- 2003-02-12 GB GBGB0303162.2A patent/GB0303162D0/en not_active Ceased
- 2003-05-21 KR KR10-2004-7019310A patent/KR20040111710A/en not_active Application Discontinuation
- 2003-05-21 AT AT03725542T patent/ATE528799T1/en not_active IP Right Cessation
- 2003-05-21 KR KR10-2004-7019300A patent/KR20050006283A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
ATE528799T1 (en) | 2011-10-15 |
KR20050006283A (en) | 2005-01-15 |
GB0228809D0 (en) | 2003-01-15 |
GB0212564D0 (en) | 2002-07-10 |
KR20040111710A (en) | 2004-12-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |