CH533907A - Verfahren zur Herstellung einer Halbleiteranordnung - Google Patents

Verfahren zur Herstellung einer Halbleiteranordnung

Info

Publication number
CH533907A
CH533907A CH675172A CH675172A CH533907A CH 533907 A CH533907 A CH 533907A CH 675172 A CH675172 A CH 675172A CH 675172 A CH675172 A CH 675172A CH 533907 A CH533907 A CH 533907A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH675172A
Other languages
English (en)
Inventor
Kobayashi Isamu
Original Assignee
Sony Corp Shinagawa Ku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp Shinagawa Ku filed Critical Sony Corp Shinagawa Ku
Publication of CH533907A publication Critical patent/CH533907A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Filling Or Emptying Of Bunkers, Hoppers, And Tanks (AREA)
  • Bipolar Integrated Circuits (AREA)
CH675172A 1968-05-25 1969-05-22 Verfahren zur Herstellung einer Halbleiteranordnung CH533907A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3538568 1968-05-25

Publications (1)

Publication Number Publication Date
CH533907A true CH533907A (de) 1973-02-28

Family

ID=12440421

Family Applications (2)

Application Number Title Priority Date Filing Date
CH777869A CH529445A (de) 1968-05-25 1969-05-22 Halbleiteranordnung
CH675172A CH533907A (de) 1968-05-25 1969-05-22 Verfahren zur Herstellung einer Halbleiteranordnung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CH777869A CH529445A (de) 1968-05-25 1969-05-22 Halbleiteranordnung

Country Status (10)

Country Link
US (1) US3648128A (de)
AT (1) AT310812B (de)
BE (1) BE733509A (de)
CH (2) CH529445A (de)
DE (1) DE1926884A1 (de)
FR (1) FR2009343B1 (de)
GB (1) GB1263617A (de)
NL (1) NL142287B (de)
NO (1) NO125996B (de)
SE (1) SE355109B (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3621346A (en) * 1970-01-28 1971-11-16 Ibm Process for forming semiconductor devices with polycrystalline diffusion pathways and devices formed thereby
NL7001607A (de) * 1970-02-05 1971-08-09
US3703420A (en) * 1970-03-03 1972-11-21 Ibm Lateral transistor structure and process for forming the same
US3653120A (en) * 1970-07-27 1972-04-04 Gen Electric Method of making low resistance polycrystalline silicon contacts to buried collector regions using refractory metal silicides
US4054899A (en) * 1970-09-03 1977-10-18 Texas Instruments Incorporated Process for fabricating monolithic circuits having matched complementary transistors and product
NL166156C (nl) * 1971-05-22 1981-06-15 Philips Nv Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan.
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
US3847687A (en) * 1972-11-15 1974-11-12 Motorola Inc Methods of forming self aligned transistor structure having polycrystalline contacts
JPS604591B2 (ja) * 1973-11-02 1985-02-05 株式会社日立製作所 半導体集積回路装置
US3956033A (en) * 1974-01-03 1976-05-11 Motorola, Inc. Method of fabricating an integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector
JPS51132779A (en) * 1975-05-14 1976-11-18 Hitachi Ltd Production method of vertical-junction type field-effect transistor
JPS53108776A (en) * 1977-03-04 1978-09-21 Nec Corp Semiconductor device
JPS5951743B2 (ja) * 1978-11-08 1984-12-15 株式会社日立製作所 半導体集積装置
US4274891A (en) * 1979-06-29 1981-06-23 International Business Machines Corporation Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition
US4485552A (en) * 1980-01-18 1984-12-04 International Business Machines Corporation Complementary transistor structure and method for manufacture
JPS5730359A (en) * 1980-07-30 1982-02-18 Nec Corp Semiconductor device
US4706107A (en) * 1981-06-04 1987-11-10 Nippon Electric Co., Ltd. IC memory cells with reduced alpha particle influence
US4583282A (en) * 1984-09-14 1986-04-22 Motorola, Inc. Process for self-aligned buried layer, field guard, and isolation
US4574469A (en) * 1984-09-14 1986-03-11 Motorola, Inc. Process for self-aligned buried layer, channel-stop, and isolation
US4573257A (en) * 1984-09-14 1986-03-04 Motorola, Inc. Method of forming self-aligned implanted channel-stop and buried layer utilizing non-single crystal alignment key
IT1218471B (it) * 1985-05-09 1990-04-19 Ates Componenti Elettron Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato
US6005282A (en) * 1986-09-26 1999-12-21 Analog Devices, Inc. Integrated circuit with complementary isolated bipolar transistors
US4737468A (en) * 1987-04-13 1988-04-12 Motorola Inc. Process for developing implanted buried layer and/or key locators
US5117274A (en) * 1987-10-06 1992-05-26 Motorola, Inc. Merged complementary bipolar and MOS means and method
US4830973A (en) * 1987-10-06 1989-05-16 Motorola, Inc. Merged complementary bipolar and MOS means and method
US5212109A (en) * 1989-05-24 1993-05-18 Nissan Motor Co., Ltd. Method for forming PN junction isolation regions by forming buried regions of doped polycrystalline or amorphous semiconductor
US5406113A (en) * 1991-01-09 1995-04-11 Fujitsu Limited Bipolar transistor having a buried collector layer
JPH05218049A (ja) * 1992-01-31 1993-08-27 Nec Corp 半導体素子形成用基板
US7411271B1 (en) * 2007-01-19 2008-08-12 Episil Technologies Inc. Complementary metal-oxide-semiconductor field effect transistor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
US3341755A (en) * 1964-03-20 1967-09-12 Westinghouse Electric Corp Switching transistor structure and method of making the same
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
FR1459892A (fr) * 1964-08-20 1966-06-17 Texas Instruments Inc Dispositifs semi-conducteurs
DE1439736A1 (de) * 1964-10-30 1969-03-27 Telefunken Patent Verfahren zur Herstellung niedriger Kollektor- bzw. Diodenbahnwiderstaende in einer Festkoerperschaltung
US3327182A (en) * 1965-06-14 1967-06-20 Westinghouse Electric Corp Semiconductor integrated circuit structure and method of making the same
US3475661A (en) * 1966-02-09 1969-10-28 Sony Corp Semiconductor device including polycrystalline areas among monocrystalline areas
US3414783A (en) * 1966-03-14 1968-12-03 Westinghouse Electric Corp Electronic apparatus for high speed transistor switching
US3474308A (en) * 1966-12-13 1969-10-21 Texas Instruments Inc Monolithic circuits having matched complementary transistors,sub-epitaxial and surface resistors,and n and p channel field effect transistors

Also Published As

Publication number Publication date
US3648128A (en) 1972-03-07
NO125996B (de) 1972-12-04
BE733509A (de) 1969-11-03
NL6907927A (de) 1969-11-27
GB1263617A (en) 1972-02-16
FR2009343A1 (de) 1970-01-30
NL142287B (nl) 1974-05-15
DE1926884A1 (de) 1969-12-11
AT310812B (de) 1973-10-25
CH529445A (de) 1972-10-15
SE355109B (de) 1973-04-02
FR2009343B1 (de) 1974-10-31

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