BR112014000395A2 - películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto - Google Patents

películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto

Info

Publication number
BR112014000395A2
BR112014000395A2 BR112014000395A BR112014000395A BR112014000395A2 BR 112014000395 A2 BR112014000395 A2 BR 112014000395A2 BR 112014000395 A BR112014000395 A BR 112014000395A BR 112014000395 A BR112014000395 A BR 112014000395A BR 112014000395 A2 BR112014000395 A2 BR 112014000395A2
Authority
BR
Brazil
Prior art keywords
metal oxide
mixed metal
barrier films
oxide barrier
atomic layer
Prior art date
Application number
BR112014000395A
Other languages
English (en)
Inventor
R Dickey Eric
Original Assignee
Lotus Applied Tech Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lotus Applied Tech Llc filed Critical Lotus Applied Tech Llc
Publication of BR112014000395A2 publication Critical patent/BR112014000395A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)

Abstract

resumo películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto um método de formar uma película fina de camada de barreira (100) de um óxido de metal misto, tal como uma mistura de alumínio, titânio, e oxigênio (altio), compreende exposição sequencial de um substrato (110) tendo uma temperatura de superfície inferior a 100ºc para um precursor de haleto, um plasma de oxigênio, e um precursor metal orgânico. películas de barreira formadas pelo método exibem taxa de transmissão de vapor de água (wvtr) melhorada sobre as películas individuais de óxido de metal e nanolaminados de dois óxidos de metal tendo uma espessura total similar. 1/1
BR112014000395A 2011-07-11 2012-07-11 películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto BR112014000395A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161506607P 2011-07-11 2011-07-11
PCT/US2012/046308 WO2013009913A2 (en) 2011-07-11 2012-07-11 Mixed metal oxide barrier films and atomic layer deposition method for making mixed metal oxide barrier films

Publications (1)

Publication Number Publication Date
BR112014000395A2 true BR112014000395A2 (pt) 2017-02-14

Family

ID=47506903

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112014000395A BR112014000395A2 (pt) 2011-07-11 2012-07-11 películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto

Country Status (7)

Country Link
US (1) US20130177760A1 (pt)
EP (1) EP2732071B1 (pt)
JP (1) JP6204911B2 (pt)
KR (1) KR102014321B1 (pt)
CN (1) CN103827350B (pt)
BR (1) BR112014000395A2 (pt)
WO (1) WO2013009913A2 (pt)

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CN106486601A (zh) * 2013-04-30 2017-03-08 成均馆大学校产学协力团 多层封装薄膜
WO2015047036A1 (ko) 2013-09-30 2015-04-02 주식회사 엘지화학 유기전자소자용 기판 및 이의 제조방법
KR20150109984A (ko) * 2014-03-21 2015-10-02 삼성전자주식회사 기체 차단 필름, 이를 포함하는 냉장고 및 기체 차단 필름의 제조방법
JP2016005900A (ja) 2014-05-27 2016-01-14 パナソニックＩｐマネジメント株式会社 ガスバリア膜、ガスバリア膜付きフィルム基板およびこれを備えた電子デバイス。
CN111499897A (zh) 2014-07-24 2020-08-07 欧司朗Oled股份有限公司 屏障层的制备方法和包含这种屏障层的载体主体
WO2016061524A1 (en) * 2014-10-17 2016-04-21 Dickey Eric R Deposition of high-quality mixed oxide barrier films
CN107210199A (zh) * 2014-10-17 2017-09-26 路特斯应用技术有限责任公司 高速沉积混合氧化物阻挡膜
JP6259023B2 (ja) 2015-07-20 2018-01-10 ウルトラテック インク 電極系デバイス用のａｌｄ処理のためのマスキング方法
KR102129316B1 (ko) * 2018-02-12 2020-07-02 한국기계연구원 유무기 복합체 및 이의 제조방법
CN108893725B (zh) * 2018-08-06 2020-08-04 吉林大学 一种使用多步原子层沉积技术生长均匀混合金属氧化物的方法
CN112175220B (zh) * 2020-09-03 2023-01-03 广东以色列理工学院 耐高温的改性聚丙烯薄膜及其制备方法和应用

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Also Published As

Publication number Publication date
EP2732071B1 (en) 2020-06-03
CN103827350A (zh) 2014-05-28
WO2013009913A3 (en) 2013-03-21
EP2732071A4 (en) 2015-03-18
JP6204911B2 (ja) 2017-09-27
WO2013009913A2 (en) 2013-01-17
EP2732071A2 (en) 2014-05-21
CN103827350B (zh) 2016-01-13
US20130177760A1 (en) 2013-07-11
KR20140039036A (ko) 2014-03-31
JP2014524982A (ja) 2014-09-25
KR102014321B1 (ko) 2019-11-04

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Legal Events

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B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 7A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2522 DE 07-05-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.