BR112018000181A2 - dispositivo fotovoltaico compreendendo material de perovskita - Google Patents

dispositivo fotovoltaico compreendendo material de perovskita

Info

Publication number
BR112018000181A2
BR112018000181A2 BR112018000181A BR112018000181A BR112018000181A2 BR 112018000181 A2 BR112018000181 A2 BR 112018000181A2 BR 112018000181 A BR112018000181 A BR 112018000181A BR 112018000181 A BR112018000181 A BR 112018000181A BR 112018000181 A2 BR112018000181 A2 BR 112018000181A2
Authority
BR
Brazil
Prior art keywords
perovskite material
photovoltaic device
lead salt
perovskite
substrate
Prior art date
Application number
BR112018000181A
Other languages
English (en)
Other versions
BR112018000181B1 (pt
Inventor
D. IRWIN Michael
A. CHUTE Jerred
V. DHAS Vivek
Original Assignee
Hee Solar, L.L.C.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/796,468 external-priority patent/US9425396B2/en
Application filed by Hee Solar, L.L.C. filed Critical Hee Solar, L.L.C.
Publication of BR112018000181A2 publication Critical patent/BR112018000181A2/pt
Publication of BR112018000181B1 publication Critical patent/BR112018000181B1/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/12—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to hydrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/24—Lead compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
    • C07B2200/00—Indexing scheme relating to specific properties of organic compounds
    • C07B2200/13—Crystalline forms, e.g. polymorphs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Light Receiving Elements (AREA)

Abstract

trata-se de um método para processamento de uma camada fotoativa de perovskita. o método compreende depositar um precursor de sal de chumbo em um substrato para formar um filme fino de sal de chumbo, depositar um segundo precursor de sal no filme fino de sal de chumbo e recozer o substrato para formar um material de perovskita.
BR112018000181-3A 2015-07-10 2016-07-06 Dispositivo fotovoltaico compreendendo material de perovskita BR112018000181B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/796,468 US9425396B2 (en) 2013-11-26 2015-07-10 Perovskite material layer processing
US14/796,468 2015-07-10
PCT/US2016/041090 WO2017011239A1 (en) 2015-07-10 2016-07-06 Perovskite material layer processing

Publications (2)

Publication Number Publication Date
BR112018000181A2 true BR112018000181A2 (pt) 2018-09-04
BR112018000181B1 BR112018000181B1 (pt) 2022-12-27

Family

ID=57757468

Family Applications (2)

Application Number Title Priority Date Filing Date
BR112018000181-3A BR112018000181B1 (pt) 2015-07-10 2016-07-06 Dispositivo fotovoltaico compreendendo material de perovskita
BR122019013870-2A BR122019013870B1 (pt) 2015-07-10 2016-07-06 Métodos para processamento de uma camada fotoativa de perovskita

Family Applications After (1)

Application Number Title Priority Date Filing Date
BR122019013870-2A BR122019013870B1 (pt) 2015-07-10 2016-07-06 Métodos para processamento de uma camada fotoativa de perovskita

Country Status (12)

Country Link
EP (2) EP3741767A1 (pt)
JP (2) JP6374134B1 (pt)
KR (2) KR20190034698A (pt)
CN (2) CN108140731B (pt)
AU (2) AU2016294314B2 (pt)
BR (2) BR112018000181B1 (pt)
CA (2) CA2991887C (pt)
ES (1) ES2822140T3 (pt)
MX (2) MX2018000314A (pt)
MY (1) MY185883A (pt)
PL (1) PL3320571T3 (pt)
WO (1) WO2017011239A1 (pt)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068875B (zh) * 2017-03-10 2019-06-25 武汉大学 一种优化钙钛矿晶体薄膜形貌的方法
JP6878090B2 (ja) * 2017-03-31 2021-05-26 住友化学株式会社 光電変換素子
KR102457927B1 (ko) * 2017-05-29 2022-10-25 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 페로브스카이트 실리콘 텐덤 태양전지의 제조 방법
EP3454373A1 (en) 2017-09-11 2019-03-13 Siemens Healthcare GmbH Optoelectronic device with spray coated organic semiconductor based photoactive layer with reduced defective pixels and improved morphology
RU2685296C1 (ru) * 2017-12-25 2019-04-17 АО "Красноярская ГЭС" Способ получения пленки светопоглощающего материала с перовскитоподобной структурой
CN109244251A (zh) * 2018-08-28 2019-01-18 北京科技大学 一种掺杂硫氰酸钾的钙钛矿太阳能电池及其制备方法
CN109244243A (zh) * 2018-09-06 2019-01-18 中国石油大学(华东) 一种L-半胱氨酸修饰TiO2电子传输层的方法和应用
CN109119544A (zh) * 2018-09-30 2019-01-01 华南理工大学 一种新型发光层结构的钙钛矿电致发光器件及其制备方法
US20200157125A1 (en) * 2018-11-21 2020-05-21 Hee Solar, L.L.C. Enhanced Perovskite Materials for Photovoltaic Devices
JP2020088316A (ja) * 2018-11-30 2020-06-04 国立大学法人東京工業大学 積層体、太陽電池、及び太陽電池の製造方法
CN110224065B (zh) * 2019-04-11 2021-01-01 浙江大学 膜厚不敏感的反型厚膜二维杂化钙钛矿太阳电池及其制备方法
EP3978646A4 (en) * 2019-06-03 2023-07-05 Mecaroenergy Co., Ltd. PROCESS FOR MAKING AN ABSORBENT LAYER OF A PEROVSKITE SOLAR CELL USING CHEMICAL VAPOR DEPOSITION
CN110311038B (zh) * 2019-06-21 2022-08-26 南京邮电大学 一种增大钙钛矿太阳能电池钙钛矿膜层晶粒尺寸的方法
CN112952001A (zh) * 2019-12-10 2021-06-11 中国科学院大连化学物理研究所 一种钙钛矿太阳能电池及其制备方法
KR102399835B1 (ko) * 2020-02-21 2022-05-26 한국화학연구원 페로브스카이트 분말을 제조하기 위한 용매 및 이를 이용한 페로브스카이트 분말 제조방법
CN111697142A (zh) * 2020-06-04 2020-09-22 南京大学 一种有机无机杂化钙钛矿薄膜的制备方法
KR102402711B1 (ko) * 2020-08-11 2022-05-27 주식회사 메카로에너지 페로브스카이트 박막태양전지 제조방법
CN114085168B (zh) * 2021-11-30 2023-07-07 南京理工大学 高光产额的镉掺杂二苯胍锰溴闪烁体及其合成方法
CN115843205B (zh) * 2023-02-20 2023-05-23 中国华能集团清洁能源技术研究院有限公司 一种钙钛矿膜层的制备方法及钙钛矿太阳能电池

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5189289B2 (ja) * 2004-06-24 2013-04-24 株式会社ユニバーサルエンターテインメント ペロブスカイト型複合酸化物の製造方法
US10388897B2 (en) * 2012-05-18 2019-08-20 Oxford University Innovation Limited Optoelectronic device comprising porous scaffold material and perovskites
GB201208793D0 (en) * 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
US10079320B2 (en) * 2012-05-18 2018-09-18 Oxford University Innovation Limited Optoelectronic device comprising perovskites
HUE059781T2 (hu) * 2012-09-18 2022-12-28 Univ Oxford Innovation Ltd Optoelektronikai eszköz
US9136408B2 (en) * 2013-11-26 2015-09-15 Hunt Energy Enterprises, Llc Perovskite and other solar cell materials
JP2015119102A (ja) * 2013-12-19 2015-06-25 アイシン精機株式会社 ハイブリッド型太陽電池
WO2016121922A1 (ja) 2015-01-29 2016-08-04 積水化学工業株式会社 太陽電池及び太陽電池の製造方法
KR20180013859A (ko) * 2015-03-24 2018-02-07 킹 압둘라 유니버시티 오브 사이언스 앤드 테크놀로지 유기 금속 할라이드 구조의 제조 방법들

Also Published As

Publication number Publication date
JP6513862B2 (ja) 2019-05-15
AU2016294314B2 (en) 2018-11-22
AU2016294314A1 (en) 2018-01-25
CN108140731B (zh) 2022-06-14
BR112018000181B1 (pt) 2022-12-27
CA2991887C (en) 2020-01-28
EP3320571A4 (en) 2018-12-19
KR20190034698A (ko) 2019-04-02
PL3320571T3 (pl) 2021-02-08
CA3038358A1 (en) 2017-01-19
ES2822140T3 (es) 2021-04-29
EP3320571B1 (en) 2020-09-02
CN108140731A (zh) 2018-06-08
AU2019201229A1 (en) 2019-03-21
JP2018190997A (ja) 2018-11-29
MY185883A (en) 2021-06-14
MX2018000314A (es) 2018-03-14
MX2023012571A (es) 2024-01-23
EP3320571A1 (en) 2018-05-16
AU2019201229B2 (en) 2020-11-26
JP6374134B1 (ja) 2018-08-15
KR101963702B1 (ko) 2019-04-01
JP2018533195A (ja) 2018-11-08
KR20180025891A (ko) 2018-03-09
BR122019013870B1 (pt) 2023-01-10
WO2017011239A1 (en) 2017-01-19
EP3741767A1 (en) 2020-11-25
CN115172605A (zh) 2022-10-11
CA2991887A1 (en) 2017-01-19
CA3038358C (en) 2020-12-15

Similar Documents

Publication Publication Date Title
BR112018000181A2 (pt) dispositivo fotovoltaico compreendendo material de perovskita
EP3125298A4 (en) Coating solution for non-emissive organic semiconductor device, organic transistor, compound, organic semiconductor material for non-emissive organic semiconductor device, material for organic transistor, method for manufacturing organic transistor, and method for manufacturing organic semiconductor film
WO2015116297A3 (en) Sequential processing with vapor treatment of thin films of organic-inorganic perovskite materials
MY198714A (en) Photovoltaic devices and method of manufacturing
BR112017002107A2 (pt) ?método para formulação de materiais de célula solar de perovskita e material de perovskita?
SG11201508319QA (en) Antifouling coating composition, antifouling coating film, antifouling substrate, and method for producing antifouling substrate
EP3242319A4 (en) THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, AND MATRIX SUBSTRATE, AND METHOD FOR MANUFACTURING THE SAME
EP2988335A4 (en) THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, NETWORK SUBSTRATE, AND DISPLAY APPARATUS
EP3540022A4 (en) ANTI-FOULING COATING COMPOSITION, ANTI-FOULING COATING FILM, BASE MATERIAL WITH ANTI-FOULING COATING FILM AND METHOD FOR MANUFACTURING THE SAME, AND ANTI-FOULING METHOD
SG11201509576QA (en) Antifouling coating composition, antifouling coating film, substrate with antifouling coating film, and production process for the substrate
TW201612956A (en) Method of depositing a layer, method of manufacturing a transistor, layer stack for an electronic device, and an electronic device
EP3523460A4 (en) SUBSTRATE COATED WITH A THIN FILM OF SAPPHIRE
KR102276146B9 (ko) 박막 트랜지스터 기판 및 이의 제조 방법
IL255614B (en) New compound, material for forming a thin layer and method for producing a thin layer
EP3208851A4 (en) Thin film transistor and manufacturing method thereof, array substrate and display apparatus
GB201600109D0 (en) Method for manufacturing thin film transistor array substrate
EP3488699A4 (en) ANTIBACTERIAL COMPOSITION, ANTIBACTERIAL FILM, SUBSTRATE WITH ANTIBACTERIAL FILM, PROCESS FOR PREPARING THE ANTIBACTERIAL FILM AND METHOD FOR THE PRODUCTION OF THE SUBSTRATE WITH ANTIBACTERIAL FILM
EP3458625A4 (en) SUBSTRATE COATED WITH SAPPHIRE THIN LAYER
EP3241239A4 (en) Method for manufacturing thin film transistor and related active layer for thin film transistor, thin film transistor, array substrate, and display apparatus
GB2556205B (en) Method for manufacturing thin film transistor array substrate
TW201614082A (en) Edge exclusion mask, and method and apparatus for layer deposition on substrate by using the same
EP3432375A4 (en) ORGANIC SEMICONDUCTOR COMPOSITION, PROCESS FOR PREPARING AN ORGANIC THIN-LAYER TRANSISTOR AND ORGANIC THIN-LAYER TRANSISTOR
FR3022074B1 (fr) Procede de preparation de couche mince d'absorbeur a base de sulfure(s) et seleniures(s) de cuivre, zinc et etain, couche mince recuite et dispositif photovoltaique obtenus.
EP3067950A4 (en) Coating material for forming semiconductors, semiconductor thin film, thin film solar cell and method for manufacturing thin film solar cell
EP3093896A4 (en) Organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor devices, material for organic transistors, coating solution for non-light-emitting organic semiconductor devices, organic semiconductor film for non-light-emitting organic semiconductor devices, and method for producing organic semiconductor film for non-light-emitting organic semiconductor devices

Legal Events

Date Code Title Description
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B25F Entry of change of name and/or headquarter and transfer of application, patent and certif. of addition of invention: change of name on requirement

Owner name: HEE SOLAR, L.L.C. (US)

Free format text: A FIM DE ATENDER A(S) ALTERACAO(OES) DE NOME REQUERIDA(S) ATRAVES DA PETICAO NO870210053111, DE 14/06/2021, E NECESSARIO LEGALIZACAO CONSULAR OU APOSTILA E TRADUCAOJURAMENTADA.

B25D Requested change of name of applicant approved

Owner name: HUNT PEROVSKITE TECHNOLOGIES, L.L.C. (US)

B25E Requested change of name of applicant rejected

Owner name: HUNT PEROVSKITE TECHNOLOGIES, L.L.C. (US)

Free format text: INDEFERIDO O PEDIDO DE ALTERACAO DE NOME CONTIDO NA PETICAO 870210053111 DE 14/06/2021, POR AUSENCIA DE CUMPRIMENTO DA EXIGENCIA PUBLICADA NA RPI NO 2637, DE 20/07/2021.

B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 06/07/2016, OBSERVADAS AS CONDICOES LEGAIS