ATE526067T1 - Regenerierungsverfahren für ätzlösungen, ätzverfahren und ätzsystem - Google Patents

Regenerierungsverfahren für ätzlösungen, ätzverfahren und ätzsystem

Info

Publication number
ATE526067T1
ATE526067T1 AT07019492T AT07019492T ATE526067T1 AT E526067 T1 ATE526067 T1 AT E526067T1 AT 07019492 T AT07019492 T AT 07019492T AT 07019492 T AT07019492 T AT 07019492T AT E526067 T1 ATE526067 T1 AT E526067T1
Authority
AT
Austria
Prior art keywords
etching
etching solution
silicon
filters
silicon compounds
Prior art date
Application number
AT07019492T
Other languages
English (en)
Inventor
Nobuhiko Izuta
Haruru Watatsu
Original Assignee
Apprecia Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Apprecia Technology Inc filed Critical Apprecia Technology Inc
Application granted granted Critical
Publication of ATE526067T1 publication Critical patent/ATE526067T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AT07019492T 2006-10-12 2007-10-04 Regenerierungsverfahren für ätzlösungen, ätzverfahren und ätzsystem ATE526067T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006279098A JP4944558B2 (ja) 2006-10-12 2006-10-12 エッチング液の再生方法、エッチング方法およびエッチング装置

Publications (1)

Publication Number Publication Date
ATE526067T1 true ATE526067T1 (de) 2011-10-15

Family

ID=38983487

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07019492T ATE526067T1 (de) 2006-10-12 2007-10-04 Regenerierungsverfahren für ätzlösungen, ätzverfahren und ätzsystem

Country Status (7)

Country Link
US (1) US7964108B2 (de)
EP (1) EP1911501B1 (de)
JP (1) JP4944558B2 (de)
KR (1) KR20080033865A (de)
CN (1) CN101303976A (de)
AT (1) ATE526067T1 (de)
TW (1) TW200826194A (de)

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WO2010010638A1 (ja) * 2008-07-25 2010-01-28 日本バルカー工業株式会社 リン酸含有処理液の再生方法
KR101021784B1 (ko) * 2008-10-22 2011-03-17 주식회사 에스씨티 나노막필터를 이용한 에칭액의 재생 장치 및 그 재생방법
TWI358327B (en) * 2008-11-19 2012-02-21 Inotera Memories Inc Chemical treatment apparatus
DE112010001432T5 (de) * 2009-03-31 2012-10-25 Kurita Water Industries, Ltd. Vorrichtung und Verfahren zur Aufbereitung einer Ätzlösung
US20110014726A1 (en) 2009-07-20 2011-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming shallow trench isolation structure
KR101117068B1 (ko) * 2009-11-17 2012-02-22 주식회사 전영 에칭용액 여과장치
CN102446789A (zh) * 2011-09-08 2012-05-09 上海华力微电子有限公司 一种蚀刻槽循环管路装置
US8580133B2 (en) * 2011-11-14 2013-11-12 Globalfoundries Inc. Methods of controlling the etching of silicon nitride relative to silicon dioxide
US20130260569A1 (en) * 2012-03-30 2013-10-03 Lam Research Ag Apparatus and method for liquid treatment of wafer-shaped articles
KR102246213B1 (ko) * 2013-03-15 2021-04-28 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. 고온 에칭액을 제공하는 처리 시스템 및 방법
JP6502633B2 (ja) * 2013-09-30 2019-04-17 芝浦メカトロニクス株式会社 基板処理方法及び基板処理装置
US9490138B2 (en) * 2013-12-10 2016-11-08 Tel Fsi, Inc. Method of substrate temperature control during high temperature wet processing
TWI630652B (zh) * 2014-03-17 2018-07-21 斯克林集團公司 基板處理裝置及使用基板處理裝置之基板處理方法
US10964559B2 (en) * 2014-06-30 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer etching apparatus and method for controlling etch bath of wafer
KR101671118B1 (ko) 2014-07-29 2016-10-31 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP6320869B2 (ja) * 2014-07-29 2018-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2016059855A (ja) * 2014-09-17 2016-04-25 株式会社東芝 処理装置、及び、処理液の再利用方法
JP6434367B2 (ja) * 2015-05-14 2018-12-05 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
CN104846377A (zh) * 2015-06-02 2015-08-19 成都虹华环保科技股份有限公司 一种全自动蚀刻液回收装置
TW201713751A (zh) * 2015-10-06 2017-04-16 聯華電子股份有限公司 酸槽補酸系統與方法
KR102490739B1 (ko) * 2015-12-29 2023-01-20 솔브레인 주식회사 식각액의 정제 방법
CN106328512A (zh) * 2016-08-29 2017-01-11 贵州乾萃科技有限公司 一种刻蚀装置及其使用方法
US20180166300A1 (en) * 2016-12-13 2018-06-14 Lam Research Ag Point-of-use mixing systems and methods for controlling temperatures of liquids dispensed at a substrate
US11229856B2 (en) * 2017-09-29 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Etching solution recycling system and method for wafer etching apparatus
JP7224117B2 (ja) * 2018-06-15 2023-02-17 東京エレクトロン株式会社 基板処理装置および処理液再利用方法
CN108689516A (zh) * 2018-08-16 2018-10-23 杭州老板电器股份有限公司 净水装置及净水机
JP7190892B2 (ja) * 2018-12-12 2022-12-16 東京エレクトロン株式会社 基板処理装置および処理液濃縮方法
KR102084044B1 (ko) * 2018-12-24 2020-03-03 주식회사 세미부스터 인산용액 중의 실리콘 농도 분석방법
KR20210052822A (ko) * 2019-11-01 2021-05-11 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
CN111106041A (zh) * 2019-12-10 2020-05-05 上海华力集成电路制造有限公司 湿法刻蚀机台及湿法刻蚀药液的回收方法
CN114195245A (zh) * 2020-09-02 2022-03-18 中国科学院微电子研究所 腐蚀液回收再利用装置及方法
CN112331562B (zh) * 2020-10-26 2023-12-22 北京北方华创微电子装备有限公司 氮化硅膜刻蚀方法
JP2022117321A (ja) * 2021-01-29 2022-08-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および、基板処理方法
CN113943579A (zh) * 2021-10-15 2022-01-18 中国科学院上海微***与信息技术研究所 组合型刻蚀液、刻蚀***及刻蚀方法
CN114249477A (zh) * 2021-11-15 2022-03-29 中国科学院上海微***与信息技术研究所 氮化物薄膜刻蚀液的再生方法和氮化物薄膜的刻蚀方法
CN116837466B (zh) * 2023-08-31 2023-12-08 合肥晶合集成电路股份有限公司 磷酸蚀刻液回收方法及蚀刻方法

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JP2541443B2 (ja) 1993-04-20 1996-10-09 日本電気株式会社 ウェットエッチング装置及びフィルタ再生方法
DE4411617A1 (de) * 1994-04-02 1995-10-05 Abb Management Ag Verfahren und Vorrichtung zum Schmieren der Lager eines Turboladers
JP3609186B2 (ja) * 1996-02-08 2005-01-12 株式会社ルネサステクノロジ ウェット処理装置およびウェット処理装置を用いた半導体装置の製造方法
JP3020895B2 (ja) 1997-06-16 2000-03-15 タキゲン製造株式会社 扉用２点ロック型錠止装置
DE19740327A1 (de) * 1997-09-13 1999-03-18 Univ Karlsruhe Verfahren und Vorrichtung zur Probenaufbereitung für die Analytik partikelhaltiger wäßriger Proben
JP4119040B2 (ja) * 1999-06-16 2008-07-16 オルガノ株式会社 機能水製造方法及び装置
DE10108957A1 (de) * 2001-02-19 2002-08-29 Begerow E Gmbh & Co Verfahren und Vorrichtung zum Filtrieren von Flüssigkeiten, insbesondere Getränken
JP2003059884A (ja) * 2001-08-20 2003-02-28 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP3788985B2 (ja) * 2002-09-17 2006-06-21 エム・エフエスアイ株式会社 エッチング液の再生方法、エッチング方法およびエッチング装置
TWI233157B (en) * 2002-09-17 2005-05-21 M Fsi Ltd Regeneration process of etching solution, etching process, and etching system
JP2005251936A (ja) * 2004-03-03 2005-09-15 St Lcd Kk 薬液処理装置
JP3884440B2 (ja) * 2004-03-15 2007-02-21 株式会社東芝 フィルタおよび半導体処理装置
JP4736339B2 (ja) * 2004-03-29 2011-07-27 栗田工業株式会社 送液手段および送液方法

Also Published As

Publication number Publication date
EP1911501B1 (de) 2011-09-28
CN101303976A (zh) 2008-11-12
EP1911501A2 (de) 2008-04-16
JP2008098444A (ja) 2008-04-24
JP4944558B2 (ja) 2012-06-06
TW200826194A (en) 2008-06-16
US7964108B2 (en) 2011-06-21
EP1911501A3 (de) 2009-03-11
KR20080033865A (ko) 2008-04-17
US20080087645A1 (en) 2008-04-17

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