ATE225961T1 - Halbleiterspeicheranordnung mit fehlerdetektion und -korrektur - Google Patents
Halbleiterspeicheranordnung mit fehlerdetektion und -korrekturInfo
- Publication number
- ATE225961T1 ATE225961T1 AT97934742T AT97934742T ATE225961T1 AT E225961 T1 ATE225961 T1 AT E225961T1 AT 97934742 T AT97934742 T AT 97934742T AT 97934742 T AT97934742 T AT 97934742T AT E225961 T1 ATE225961 T1 AT E225961T1
- Authority
- AT
- Austria
- Prior art keywords
- block
- semiconductor memory
- pct
- correction
- error detection
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/16—Error detection or correction of the data by redundancy in hardware
- G06F11/20—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
- G11C29/765—Masking faults in memories by using spares or by reconfiguring using address translation or modifications in solid state disks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
- G06F2201/88—Monitoring involving counting
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23468296 | 1996-08-16 | ||
PCT/JP1997/002779 WO1998008166A1 (en) | 1996-08-16 | 1997-08-08 | Semiconductor memory device having error detection and correction |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE225961T1 true ATE225961T1 (de) | 2002-10-15 |
Family
ID=16974802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT97934742T ATE225961T1 (de) | 1996-08-16 | 1997-08-08 | Halbleiterspeicheranordnung mit fehlerdetektion und -korrektur |
Country Status (8)
Country | Link |
---|---|
US (1) | US6058047A (de) |
EP (1) | EP0862762B1 (de) |
JP (1) | JP2001501000A (de) |
KR (1) | KR100383404B1 (de) |
AT (1) | ATE225961T1 (de) |
DE (1) | DE69716233T2 (de) |
TW (1) | TW368659B (de) |
WO (1) | WO1998008166A1 (de) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3782840B2 (ja) | 1995-07-14 | 2006-06-07 | 株式会社ルネサステクノロジ | 外部記憶装置およびそのメモリアクセス制御方法 |
KR100308173B1 (ko) | 1996-02-29 | 2001-11-02 | 가나이 쓰도무 | 부분불량메모리를탑재한반도체기억장치 |
JP3721725B2 (ja) * | 1997-07-09 | 2005-11-30 | ソニー株式会社 | 情報処理方法および情報処理装置 |
KR100284430B1 (ko) * | 1998-12-18 | 2001-04-02 | 구자홍 | 프로그램 갱신 방법 및 장치 |
AU7313600A (en) | 1999-09-17 | 2001-04-24 | Hitachi Limited | Storage where the number of error corrections is recorded |
US6816986B1 (en) * | 1999-12-28 | 2004-11-09 | Intel Corporation | Remapping memory devices during operation |
US6728913B1 (en) | 2000-02-25 | 2004-04-27 | Advanced Micro Devices, Inc. | Data recycling in memory |
US6459624B1 (en) * | 2000-09-01 | 2002-10-01 | Megawin Technology Co., Ltd. | Memory structure capable of preventing data loss therein and method for protecting the same |
JP3842543B2 (ja) * | 2000-11-09 | 2006-11-08 | 富士通株式会社 | 不良区域処理装置、不良区域処理方法、および情報記録装置 |
JP4373615B2 (ja) * | 2001-01-25 | 2009-11-25 | 富士通マイクロエレクトロニクス株式会社 | 初期不良ブロックのマーキング方法 |
JP4766781B2 (ja) * | 2001-06-20 | 2011-09-07 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP2003076605A (ja) * | 2001-08-31 | 2003-03-14 | Mitsubishi Electric Corp | ブロック消去型不揮発メモリを搭載した半導体記憶装置とそのデータの書込み・読出し方法 |
JP4034949B2 (ja) | 2001-09-06 | 2008-01-16 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
US7000063B2 (en) * | 2001-10-05 | 2006-02-14 | Matrix Semiconductor, Inc. | Write-many memory device and method for limiting a number of writes to the write-many memory device |
JP2003132693A (ja) * | 2001-10-29 | 2003-05-09 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
TW200302966A (en) * | 2002-01-29 | 2003-08-16 | Matsushita Electric Ind Co Ltd | Memory device, data processing method and data processing program |
US7073099B1 (en) | 2002-05-30 | 2006-07-04 | Marvell International Ltd. | Method and apparatus for improving memory operation and yield |
US7103821B2 (en) * | 2002-07-03 | 2006-09-05 | Intel Corporation | Method and apparatus for improving network router line rate performance by an improved system for error checking |
KR20040023843A (ko) * | 2002-09-12 | 2004-03-20 | 삼성전기주식회사 | 메모리의 결함 처리 장치 및 그 방법 |
EP1548602B1 (de) * | 2002-10-02 | 2008-03-12 | Matsushita Electric Industrial Co., Ltd. | Steuerverfahren für eine nichtflüchtige speichereinrichtung |
US7296213B2 (en) * | 2002-12-11 | 2007-11-13 | Nvidia Corporation | Error correction cache for flash memory |
JP4256175B2 (ja) * | 2003-02-04 | 2009-04-22 | 株式会社東芝 | 不揮発性半導体メモリ |
JP4550439B2 (ja) * | 2003-02-28 | 2010-09-22 | 東芝メモリシステムズ株式会社 | Ecc制御装置 |
KR100543447B1 (ko) * | 2003-04-03 | 2006-01-23 | 삼성전자주식회사 | 에러정정기능을 가진 플래쉬메모리장치 |
ATE427550T1 (de) * | 2003-06-05 | 2009-04-15 | Nxp Bv | Integritatssteuerung fur in einem nichtfluchtigen speicher gespeicherte daten |
JP2005056394A (ja) * | 2003-07-18 | 2005-03-03 | Toshiba Corp | 記憶装置及びメモリカード |
US6876579B2 (en) * | 2003-08-04 | 2005-04-05 | Phison Electronics Corp. | Method writing data to a large block of a flash memory cell |
US8176250B2 (en) * | 2003-08-29 | 2012-05-08 | Hewlett-Packard Development Company, L.P. | System and method for testing a memory |
US7346755B2 (en) * | 2003-09-16 | 2008-03-18 | Hewlett-Packard Development, L.P. | Memory quality assurance |
US6988237B1 (en) | 2004-01-06 | 2006-01-17 | Marvell Semiconductor Israel Ltd. | Error-correction memory architecture for testing production errors |
KR100612846B1 (ko) | 2004-05-12 | 2006-08-14 | 삼성전자주식회사 | 오디오 재생기에 있어서 충격보호기능을 위한 오디오부호화 방법 및 장치 |
US7266635B1 (en) | 2004-07-22 | 2007-09-04 | Marvell Semiconductor Israel Ltd. | Address lookup apparatus having memory and content addressable memory |
KR100645058B1 (ko) * | 2004-11-03 | 2006-11-10 | 삼성전자주식회사 | 데이터 신뢰성을 향상시킬 수 있는 메모리 관리 기법 |
JP2006179101A (ja) * | 2004-12-22 | 2006-07-06 | Fujitsu Ltd | 半導体記憶装置 |
US7539908B2 (en) * | 2005-05-17 | 2009-05-26 | Pantech & Curitel Communications, Inc. | Apparatus having function of checking error in copying or moving file and method thereof |
GB2444663B (en) * | 2005-09-02 | 2011-12-07 | Metaram Inc | Methods and apparatus of stacking drams |
DE102006013758A1 (de) * | 2006-03-24 | 2007-09-27 | Robert Bosch Gmbh | Verfahren zum Betreiben einer Speichereinrichtung |
TWM304711U (en) * | 2006-04-26 | 2007-01-11 | Genesys Logic Inc | Flash memory data access reliability enhancing device |
KR100830580B1 (ko) * | 2006-10-20 | 2008-05-21 | 삼성전자주식회사 | 플래시 메모리 장치를 포함한 메모리 시스템의 데이터 복원방법 |
KR100823170B1 (ko) | 2007-01-31 | 2008-04-21 | 삼성전자주식회사 | 배드 블록을 싱글 레벨 셀 모드로 사용하는 메모리 시스템및 메모리 카드 |
US7535787B2 (en) * | 2007-06-06 | 2009-05-19 | Daniel Elmhurst | Methods and apparatuses for refreshing non-volatile memory |
TWI372397B (en) * | 2007-08-06 | 2012-09-11 | Ind Tech Res Inst | Method and system of defect management for storage medium |
US7903486B2 (en) * | 2007-11-19 | 2011-03-08 | Sandforce, Inc. | System, method, and computer program product for increasing a lifetime of a plurality of blocks of memory |
TWI368225B (en) * | 2007-11-29 | 2012-07-11 | Ind Tech Res Inst | Recoding medium structure capable of displaying defect rate |
JP4489127B2 (ja) | 2008-02-29 | 2010-06-23 | 株式会社東芝 | 半導体記憶装置 |
JP5218228B2 (ja) * | 2008-04-23 | 2013-06-26 | 新東工業株式会社 | 搬送装置及びブラスト加工装置 |
WO2010038630A1 (en) * | 2008-09-30 | 2010-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
CN101853693A (zh) * | 2009-04-02 | 2010-10-06 | 智微科技股份有限公司 | 储存装置以及延长储存装置的使用寿命的方法 |
US8479061B2 (en) * | 2009-09-24 | 2013-07-02 | AGIGA Tech | Solid state memory cartridge with wear indication |
KR101090394B1 (ko) | 2009-12-24 | 2011-12-07 | 주식회사 하이닉스반도체 | 예비 영역을 유동적으로 관리하는 반도체 스토리지 시스템 및 그 제어 방법 |
KR101614950B1 (ko) * | 2010-04-12 | 2016-04-25 | 삼성전자주식회사 | 저장 장치에 물리적 식별자를 생성하는 방법 및 기계로 읽을 수 있는 저장 매체 |
JP2012003644A (ja) * | 2010-06-21 | 2012-01-05 | Fujitsu Ltd | メモリエラー箇所検出装置、及びメモリエラー箇所検出方法。 |
KR101824068B1 (ko) | 2011-07-28 | 2018-03-15 | 삼성전자주식회사 | 메모리 컨트롤러 구동방법, 및 메모리 컨트롤러를 포함하는 메모리 시스템, 메모리 카드 및 휴대용 전자장치 |
US8627158B2 (en) * | 2011-12-08 | 2014-01-07 | International Business Machines Corporation | Flash array built in self test engine with trace array and flash metric reporting |
US8996936B2 (en) * | 2011-12-08 | 2015-03-31 | Sandisk Technologies Inc. | Enhanced error correction in memory devices |
US8862952B1 (en) * | 2012-03-16 | 2014-10-14 | Western Digital Technologies, Inc. | Prioritized memory scanning for data storage systems |
US9218575B2 (en) * | 2013-09-04 | 2015-12-22 | Intel Corporation | Periodic training for unmatched signal receiver |
JP5619243B1 (ja) * | 2013-09-17 | 2014-11-05 | 三菱電機株式会社 | 車載用電子制御装置 |
CN104658550A (zh) * | 2013-11-19 | 2015-05-27 | 株式会社东芝 | 磁盘装置及其控制方法 |
RU2682387C1 (ru) * | 2015-03-09 | 2019-03-19 | Тосиба Мемори Корпорейшн | Полупроводниковое запоминающее устройство |
US9798475B2 (en) | 2015-03-11 | 2017-10-24 | Toshiba Memory Corporation | Memory system and method of controlling nonvolatile memory |
US9740558B2 (en) | 2015-05-31 | 2017-08-22 | Intel Corporation | On-die ECC with error counter and internal address generation |
KR20160146332A (ko) * | 2015-06-12 | 2016-12-21 | 에스케이하이닉스 주식회사 | 복수의 저장 영역들을 포함하는 메모리 시스템 및 그것의 동작 방법 |
US10127101B2 (en) | 2015-08-28 | 2018-11-13 | Intel Corporation | Memory device error check and scrub mode and error transparency |
JP2017049902A (ja) * | 2015-09-04 | 2017-03-09 | 日立オートモティブシステムズ株式会社 | 電子制御装置 |
KR20180025357A (ko) * | 2016-08-29 | 2018-03-09 | 에스케이하이닉스 주식회사 | 데이터 저장 장치 및 그것의 동작 방법 |
US10783029B2 (en) * | 2017-07-17 | 2020-09-22 | Seagate Technology Llc | Data replication in a storage system |
KR102578188B1 (ko) * | 2018-05-15 | 2023-09-14 | 에스케이하이닉스 주식회사 | 메모리 컨트롤러 및 이의 동작 방법 |
US10942847B2 (en) | 2018-12-18 | 2021-03-09 | Intel Corporation | Technologies for efficiently performing scatter-gather operations |
JP7293813B2 (ja) * | 2019-04-01 | 2023-06-20 | 富士通株式会社 | 半導体装置 |
US11023320B2 (en) * | 2019-04-04 | 2021-06-01 | Intel Corporation | Technologies for providing multiple levels of error correction |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4959774A (en) * | 1984-07-06 | 1990-09-25 | Ampex Corporation | Shadow memory system for storing variable backup blocks in consecutive time periods |
EP0675502B1 (de) * | 1989-04-13 | 2005-05-25 | SanDisk Corporation | EEPROM-System mit aus mehreren Chips bestehender Blocklöschung |
JP2582487B2 (ja) * | 1991-07-12 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体メモリを用いた外部記憶システム及びその制御方法 |
US5359569A (en) * | 1991-10-29 | 1994-10-25 | Hitachi Ltd. | Semiconductor memory |
TW261687B (de) * | 1991-11-26 | 1995-11-01 | Hitachi Seisakusyo Kk | |
JPH0750558B2 (ja) * | 1992-09-22 | 1995-05-31 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 一括消去型不揮発性メモリ |
JP3215237B2 (ja) * | 1993-10-01 | 2001-10-02 | 富士通株式会社 | 記憶装置および記憶装置の書き込み/消去方法 |
JPH09244961A (ja) * | 1996-03-08 | 1997-09-19 | Mitsubishi Electric Corp | フラッシュata−pcカード |
-
1997
- 1997-08-08 KR KR10-1998-0702768A patent/KR100383404B1/ko not_active IP Right Cessation
- 1997-08-08 WO PCT/JP1997/002779 patent/WO1998008166A1/en active IP Right Grant
- 1997-08-08 DE DE69716233T patent/DE69716233T2/de not_active Expired - Fee Related
- 1997-08-08 AT AT97934742T patent/ATE225961T1/de not_active IP Right Cessation
- 1997-08-08 US US09/051,094 patent/US6058047A/en not_active Expired - Fee Related
- 1997-08-08 EP EP97934742A patent/EP0862762B1/de not_active Expired - Lifetime
- 1997-08-08 JP JP10510566A patent/JP2001501000A/ja active Pending
- 1997-08-14 TW TW086111669A patent/TW368659B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6058047A (en) | 2000-05-02 |
EP0862762A1 (de) | 1998-09-09 |
WO1998008166A1 (en) | 1998-02-26 |
KR20000064279A (ko) | 2000-11-06 |
DE69716233D1 (de) | 2002-11-14 |
JP2001501000A (ja) | 2001-01-23 |
TW368659B (en) | 1999-09-01 |
DE69716233T2 (de) | 2003-02-20 |
KR100383404B1 (ko) | 2003-07-16 |
EP0862762B1 (de) | 2002-10-09 |
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Legal Events
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |