TW368659B - Semiconductor memory apparatus and method for reading data from and writing data in the same - Google Patents
Semiconductor memory apparatus and method for reading data from and writing data in the sameInfo
- Publication number
- TW368659B TW368659B TW086111669A TW86111669A TW368659B TW 368659 B TW368659 B TW 368659B TW 086111669 A TW086111669 A TW 086111669A TW 86111669 A TW86111669 A TW 86111669A TW 368659 B TW368659 B TW 368659B
- Authority
- TW
- Taiwan
- Prior art keywords
- blocks
- semiconductor memory
- data
- memory apparatus
- same
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/16—Error detection or correction of the data by redundancy in hardware
- G06F11/20—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
- G11C29/765—Masking faults in memories by using spares or by reconfiguring using address translation or modifications in solid state disks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
- G06F2201/88—Monitoring involving counting
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23468296 | 1996-08-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW368659B true TW368659B (en) | 1999-09-01 |
Family
ID=16974802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086111669A TW368659B (en) | 1996-08-16 | 1997-08-14 | Semiconductor memory apparatus and method for reading data from and writing data in the same |
Country Status (8)
Country | Link |
---|---|
US (1) | US6058047A (zh) |
EP (1) | EP0862762B1 (zh) |
JP (1) | JP2001501000A (zh) |
KR (1) | KR100383404B1 (zh) |
AT (1) | ATE225961T1 (zh) |
DE (1) | DE69716233T2 (zh) |
TW (1) | TW368659B (zh) |
WO (1) | WO1998008166A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101853693A (zh) * | 2009-04-02 | 2010-10-06 | 智微科技股份有限公司 | 储存装置以及延长储存装置的使用寿命的方法 |
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WO1997032253A1 (en) * | 1996-02-29 | 1997-09-04 | Hitachi, Ltd. | Semiconductor memory device having faulty cells |
JP3721725B2 (ja) * | 1997-07-09 | 2005-11-30 | ソニー株式会社 | 情報処理方法および情報処理装置 |
KR100284430B1 (ko) * | 1998-12-18 | 2001-04-02 | 구자홍 | 프로그램 갱신 방법 및 장치 |
WO2001022232A1 (fr) * | 1999-09-17 | 2001-03-29 | Hitachi, Ltd. | Memoire dans laquelle le nombre de corrections d'erreurs est enregistre |
US6816986B1 (en) * | 1999-12-28 | 2004-11-09 | Intel Corporation | Remapping memory devices during operation |
US6728913B1 (en) | 2000-02-25 | 2004-04-27 | Advanced Micro Devices, Inc. | Data recycling in memory |
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JP4373615B2 (ja) * | 2001-01-25 | 2009-11-25 | 富士通マイクロエレクトロニクス株式会社 | 初期不良ブロックのマーキング方法 |
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JP4034949B2 (ja) | 2001-09-06 | 2008-01-16 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
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JP4550439B2 (ja) * | 2003-02-28 | 2010-09-22 | 東芝メモリシステムズ株式会社 | Ecc制御装置 |
KR100543447B1 (ko) * | 2003-04-03 | 2006-01-23 | 삼성전자주식회사 | 에러정정기능을 가진 플래쉬메모리장치 |
CN1799104B (zh) * | 2003-06-05 | 2011-07-13 | Nxp股份有限公司 | 存储在非易失性存储器中的数据的完整性控制 |
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US6988237B1 (en) | 2004-01-06 | 2006-01-17 | Marvell Semiconductor Israel Ltd. | Error-correction memory architecture for testing production errors |
KR100612846B1 (ko) | 2004-05-12 | 2006-08-14 | 삼성전자주식회사 | 오디오 재생기에 있어서 충격보호기능을 위한 오디오부호화 방법 및 장치 |
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KR100645058B1 (ko) * | 2004-11-03 | 2006-11-10 | 삼성전자주식회사 | 데이터 신뢰성을 향상시킬 수 있는 메모리 관리 기법 |
JP2006179101A (ja) * | 2004-12-22 | 2006-07-06 | Fujitsu Ltd | 半導体記憶装置 |
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KR100830580B1 (ko) * | 2006-10-20 | 2008-05-21 | 삼성전자주식회사 | 플래시 메모리 장치를 포함한 메모리 시스템의 데이터 복원방법 |
KR100823170B1 (ko) | 2007-01-31 | 2008-04-21 | 삼성전자주식회사 | 배드 블록을 싱글 레벨 셀 모드로 사용하는 메모리 시스템및 메모리 카드 |
US7535787B2 (en) * | 2007-06-06 | 2009-05-19 | Daniel Elmhurst | Methods and apparatuses for refreshing non-volatile memory |
TWI372397B (en) * | 2007-08-06 | 2012-09-11 | Ind Tech Res Inst | Method and system of defect management for storage medium |
US7903486B2 (en) * | 2007-11-19 | 2011-03-08 | Sandforce, Inc. | System, method, and computer program product for increasing a lifetime of a plurality of blocks of memory |
TWI368225B (en) * | 2007-11-29 | 2012-07-11 | Ind Tech Res Inst | Recoding medium structure capable of displaying defect rate |
JP4489127B2 (ja) | 2008-02-29 | 2010-06-23 | 株式会社東芝 | 半導体記憶装置 |
JP5218228B2 (ja) * | 2008-04-23 | 2013-06-26 | 新東工業株式会社 | 搬送装置及びブラスト加工装置 |
WO2010038630A1 (en) * | 2008-09-30 | 2010-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
US8479061B2 (en) * | 2009-09-24 | 2013-07-02 | AGIGA Tech | Solid state memory cartridge with wear indication |
KR101090394B1 (ko) | 2009-12-24 | 2011-12-07 | 주식회사 하이닉스반도체 | 예비 영역을 유동적으로 관리하는 반도체 스토리지 시스템 및 그 제어 방법 |
KR101614950B1 (ko) * | 2010-04-12 | 2016-04-25 | 삼성전자주식회사 | 저장 장치에 물리적 식별자를 생성하는 방법 및 기계로 읽을 수 있는 저장 매체 |
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KR101824068B1 (ko) | 2011-07-28 | 2018-03-15 | 삼성전자주식회사 | 메모리 컨트롤러 구동방법, 및 메모리 컨트롤러를 포함하는 메모리 시스템, 메모리 카드 및 휴대용 전자장치 |
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KR20180025357A (ko) * | 2016-08-29 | 2018-03-09 | 에스케이하이닉스 주식회사 | 데이터 저장 장치 및 그것의 동작 방법 |
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KR102578188B1 (ko) * | 2018-05-15 | 2023-09-14 | 에스케이하이닉스 주식회사 | 메모리 컨트롤러 및 이의 동작 방법 |
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JP7293813B2 (ja) * | 2019-04-01 | 2023-06-20 | 富士通株式会社 | 半導体装置 |
US11023320B2 (en) * | 2019-04-04 | 2021-06-01 | Intel Corporation | Technologies for providing multiple levels of error correction |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4959774A (en) * | 1984-07-06 | 1990-09-25 | Ampex Corporation | Shadow memory system for storing variable backup blocks in consecutive time periods |
DE69024086T2 (de) * | 1989-04-13 | 1996-06-20 | Sundisk Corp | EEprom-System mit Blocklöschung |
JP2582487B2 (ja) * | 1991-07-12 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体メモリを用いた外部記憶システム及びその制御方法 |
US5359569A (en) * | 1991-10-29 | 1994-10-25 | Hitachi Ltd. | Semiconductor memory |
TW261687B (zh) * | 1991-11-26 | 1995-11-01 | Hitachi Seisakusyo Kk | |
JPH0750558B2 (ja) * | 1992-09-22 | 1995-05-31 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 一括消去型不揮発性メモリ |
JP3215237B2 (ja) * | 1993-10-01 | 2001-10-02 | 富士通株式会社 | 記憶装置および記憶装置の書き込み/消去方法 |
JPH09244961A (ja) * | 1996-03-08 | 1997-09-19 | Mitsubishi Electric Corp | フラッシュata−pcカード |
-
1997
- 1997-08-08 EP EP97934742A patent/EP0862762B1/en not_active Expired - Lifetime
- 1997-08-08 AT AT97934742T patent/ATE225961T1/de not_active IP Right Cessation
- 1997-08-08 WO PCT/JP1997/002779 patent/WO1998008166A1/en active IP Right Grant
- 1997-08-08 KR KR10-1998-0702768A patent/KR100383404B1/ko not_active IP Right Cessation
- 1997-08-08 US US09/051,094 patent/US6058047A/en not_active Expired - Fee Related
- 1997-08-08 DE DE69716233T patent/DE69716233T2/de not_active Expired - Fee Related
- 1997-08-08 JP JP10510566A patent/JP2001501000A/ja active Pending
- 1997-08-14 TW TW086111669A patent/TW368659B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101853693A (zh) * | 2009-04-02 | 2010-10-06 | 智微科技股份有限公司 | 储存装置以及延长储存装置的使用寿命的方法 |
Also Published As
Publication number | Publication date |
---|---|
DE69716233D1 (de) | 2002-11-14 |
EP0862762A1 (en) | 1998-09-09 |
DE69716233T2 (de) | 2003-02-20 |
WO1998008166A1 (en) | 1998-02-26 |
KR100383404B1 (ko) | 2003-07-16 |
US6058047A (en) | 2000-05-02 |
KR20000064279A (ko) | 2000-11-06 |
JP2001501000A (ja) | 2001-01-23 |
ATE225961T1 (de) | 2002-10-15 |
EP0862762B1 (en) | 2002-10-09 |
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Legal Events
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MM4A | Annulment or lapse of patent due to non-payment of fees |