TW368659B - Semiconductor memory apparatus and method for reading data from and writing data in the same - Google Patents

Semiconductor memory apparatus and method for reading data from and writing data in the same

Info

Publication number
TW368659B
TW368659B TW086111669A TW86111669A TW368659B TW 368659 B TW368659 B TW 368659B TW 086111669 A TW086111669 A TW 086111669A TW 86111669 A TW86111669 A TW 86111669A TW 368659 B TW368659 B TW 368659B
Authority
TW
Taiwan
Prior art keywords
blocks
semiconductor memory
data
memory apparatus
same
Prior art date
Application number
TW086111669A
Other languages
English (en)
Inventor
Shuichi Kikuchi
Original Assignee
Tokyo Electron Device Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Device Ltd filed Critical Tokyo Electron Device Ltd
Application granted granted Critical
Publication of TW368659B publication Critical patent/TW368659B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/16—Error detection or correction of the data by redundancy in hardware
    • G06F11/20—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G11C29/765—Masking faults in memories by using spares or by reconfiguring using address translation or modifications in solid state disks
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/88—Monitoring involving counting

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW086111669A 1996-08-16 1997-08-14 Semiconductor memory apparatus and method for reading data from and writing data in the same TW368659B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23468296 1996-08-16

Publications (1)

Publication Number Publication Date
TW368659B true TW368659B (en) 1999-09-01

Family

ID=16974802

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086111669A TW368659B (en) 1996-08-16 1997-08-14 Semiconductor memory apparatus and method for reading data from and writing data in the same

Country Status (8)

Country Link
US (1) US6058047A (zh)
EP (1) EP0862762B1 (zh)
JP (1) JP2001501000A (zh)
KR (1) KR100383404B1 (zh)
AT (1) ATE225961T1 (zh)
DE (1) DE69716233T2 (zh)
TW (1) TW368659B (zh)
WO (1) WO1998008166A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101853693A (zh) * 2009-04-02 2010-10-06 智微科技股份有限公司 储存装置以及延长储存装置的使用寿命的方法

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3782840B2 (ja) * 1995-07-14 2006-06-07 株式会社ルネサステクノロジ 外部記憶装置およびそのメモリアクセス制御方法
WO1997032253A1 (en) * 1996-02-29 1997-09-04 Hitachi, Ltd. Semiconductor memory device having faulty cells
JP3721725B2 (ja) * 1997-07-09 2005-11-30 ソニー株式会社 情報処理方法および情報処理装置
KR100284430B1 (ko) * 1998-12-18 2001-04-02 구자홍 프로그램 갱신 방법 및 장치
WO2001022232A1 (fr) * 1999-09-17 2001-03-29 Hitachi, Ltd. Memoire dans laquelle le nombre de corrections d'erreurs est enregistre
US6816986B1 (en) * 1999-12-28 2004-11-09 Intel Corporation Remapping memory devices during operation
US6728913B1 (en) 2000-02-25 2004-04-27 Advanced Micro Devices, Inc. Data recycling in memory
US6459624B1 (en) * 2000-09-01 2002-10-01 Megawin Technology Co., Ltd. Memory structure capable of preventing data loss therein and method for protecting the same
JP3842543B2 (ja) * 2000-11-09 2006-11-08 富士通株式会社 不良区域処理装置、不良区域処理方法、および情報記録装置
JP4373615B2 (ja) * 2001-01-25 2009-11-25 富士通マイクロエレクトロニクス株式会社 初期不良ブロックのマーキング方法
JP4766781B2 (ja) * 2001-06-20 2011-09-07 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2003076605A (ja) * 2001-08-31 2003-03-14 Mitsubishi Electric Corp ブロック消去型不揮発メモリを搭載した半導体記憶装置とそのデータの書込み・読出し方法
JP4034949B2 (ja) 2001-09-06 2008-01-16 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US7000063B2 (en) * 2001-10-05 2006-02-14 Matrix Semiconductor, Inc. Write-many memory device and method for limiting a number of writes to the write-many memory device
JP2003132693A (ja) * 2001-10-29 2003-05-09 Mitsubishi Electric Corp 不揮発性半導体記憶装置
TW200302966A (en) * 2002-01-29 2003-08-16 Matsushita Electric Ind Co Ltd Memory device, data processing method and data processing program
US7073099B1 (en) * 2002-05-30 2006-07-04 Marvell International Ltd. Method and apparatus for improving memory operation and yield
US7103821B2 (en) * 2002-07-03 2006-09-05 Intel Corporation Method and apparatus for improving network router line rate performance by an improved system for error checking
KR20040023843A (ko) * 2002-09-12 2004-03-20 삼성전기주식회사 메모리의 결함 처리 장치 및 그 방법
DE60319718D1 (de) * 2002-10-02 2008-04-24 Matsushita Electric Ind Co Ltd Steuerverfahren für eine nichtflüchtige speichereinrichtung
US7296213B2 (en) * 2002-12-11 2007-11-13 Nvidia Corporation Error correction cache for flash memory
JP4256175B2 (ja) * 2003-02-04 2009-04-22 株式会社東芝 不揮発性半導体メモリ
JP4550439B2 (ja) * 2003-02-28 2010-09-22 東芝メモリシステムズ株式会社 Ｅｃｃ制御装置
KR100543447B1 (ko) * 2003-04-03 2006-01-23 삼성전자주식회사 에러정정기능을 가진 플래쉬메모리장치
CN1799104B (zh) * 2003-06-05 2011-07-13 Nxp股份有限公司 存储在非易失性存储器中的数据的完整性控制
JP2005056394A (ja) * 2003-07-18 2005-03-03 Toshiba Corp 記憶装置及びメモリカード
US6876579B2 (en) * 2003-08-04 2005-04-05 Phison Electronics Corp. Method writing data to a large block of a flash memory cell
US8176250B2 (en) * 2003-08-29 2012-05-08 Hewlett-Packard Development Company, L.P. System and method for testing a memory
US7346755B2 (en) * 2003-09-16 2008-03-18 Hewlett-Packard Development, L.P. Memory quality assurance
US6988237B1 (en) 2004-01-06 2006-01-17 Marvell Semiconductor Israel Ltd. Error-correction memory architecture for testing production errors
KR100612846B1 (ko) 2004-05-12 2006-08-14 삼성전자주식회사 오디오 재생기에 있어서 충격보호기능을 위한 오디오부호화 방법 및 장치
US7266635B1 (en) 2004-07-22 2007-09-04 Marvell Semiconductor Israel Ltd. Address lookup apparatus having memory and content addressable memory
KR100645058B1 (ko) * 2004-11-03 2006-11-10 삼성전자주식회사 데이터 신뢰성을 향상시킬 수 있는 메모리 관리 기법
JP2006179101A (ja) * 2004-12-22 2006-07-06 Fujitsu Ltd 半導体記憶装置
US7539908B2 (en) * 2005-05-17 2009-05-26 Pantech & Curitel Communications, Inc. Apparatus having function of checking error in copying or moving file and method thereof
WO2007028109A2 (en) * 2005-09-02 2007-03-08 Metaram, Inc. Methods and apparatus of stacking drams
DE102006013758A1 (de) * 2006-03-24 2007-09-27 Robert Bosch Gmbh Verfahren zum Betreiben einer Speichereinrichtung
TWM304711U (en) * 2006-04-26 2007-01-11 Genesys Logic Inc Flash memory data access reliability enhancing device
KR100830580B1 (ko) * 2006-10-20 2008-05-21 삼성전자주식회사 플래시 메모리 장치를 포함한 메모리 시스템의 데이터 복원방법
KR100823170B1 (ko) 2007-01-31 2008-04-21 삼성전자주식회사 배드 블록을 싱글 레벨 셀 모드로 사용하는 메모리 시스템및 메모리 카드
US7535787B2 (en) * 2007-06-06 2009-05-19 Daniel Elmhurst Methods and apparatuses for refreshing non-volatile memory
TWI372397B (en) * 2007-08-06 2012-09-11 Ind Tech Res Inst Method and system of defect management for storage medium
US7903486B2 (en) * 2007-11-19 2011-03-08 Sandforce, Inc. System, method, and computer program product for increasing a lifetime of a plurality of blocks of memory
TWI368225B (en) * 2007-11-29 2012-07-11 Ind Tech Res Inst Recoding medium structure capable of displaying defect rate
JP4489127B2 (ja) 2008-02-29 2010-06-23 株式会社東芝 半導体記憶装置
JP5218228B2 (ja) * 2008-04-23 2013-06-26 新東工業株式会社 搬送装置及びブラスト加工装置
WO2010038630A1 (en) * 2008-09-30 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8479061B2 (en) * 2009-09-24 2013-07-02 AGIGA Tech Solid state memory cartridge with wear indication
KR101090394B1 (ko) 2009-12-24 2011-12-07 주식회사 하이닉스반도체 예비 영역을 유동적으로 관리하는 반도체 스토리지 시스템 및 그 제어 방법
KR101614950B1 (ko) * 2010-04-12 2016-04-25 삼성전자주식회사 저장 장치에 물리적 식별자를 생성하는 방법 및 기계로 읽을 수 있는 저장 매체
JP2012003644A (ja) * 2010-06-21 2012-01-05 Fujitsu Ltd メモリエラー箇所検出装置、及びメモリエラー箇所検出方法。
KR101824068B1 (ko) 2011-07-28 2018-03-15 삼성전자주식회사 메모리 컨트롤러 구동방법, 및 메모리 컨트롤러를 포함하는 메모리 시스템, 메모리 카드 및 휴대용 전자장치
US8627158B2 (en) * 2011-12-08 2014-01-07 International Business Machines Corporation Flash array built in self test engine with trace array and flash metric reporting
US8996936B2 (en) * 2011-12-08 2015-03-31 Sandisk Technologies Inc. Enhanced error correction in memory devices
US8862952B1 (en) * 2012-03-16 2014-10-14 Western Digital Technologies, Inc. Prioritized memory scanning for data storage systems
US9218575B2 (en) * 2013-09-04 2015-12-22 Intel Corporation Periodic training for unmatched signal receiver
JP5619243B1 (ja) * 2013-09-17 2014-11-05 三菱電機株式会社 車載用電子制御装置
CN104658550A (zh) * 2013-11-19 2015-05-27 株式会社东芝 磁盘装置及其控制方法
RU2682387C1 (ru) 2015-03-09 2019-03-19 Тосиба Мемори Корпорейшн Полупроводниковое запоминающее устройство
US9798475B2 (en) 2015-03-11 2017-10-24 Toshiba Memory Corporation Memory system and method of controlling nonvolatile memory
US9740558B2 (en) * 2015-05-31 2017-08-22 Intel Corporation On-die ECC with error counter and internal address generation
KR20160146332A (ko) * 2015-06-12 2016-12-21 에스케이하이닉스 주식회사 복수의 저장 영역들을 포함하는 메모리 시스템 및 그것의 동작 방법
US10127101B2 (en) 2015-08-28 2018-11-13 Intel Corporation Memory device error check and scrub mode and error transparency
JP2017049902A (ja) * 2015-09-04 2017-03-09 日立オートモティブシステムズ株式会社 電子制御装置
KR20180025357A (ko) * 2016-08-29 2018-03-09 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
US10783029B2 (en) * 2017-07-17 2020-09-22 Seagate Technology Llc Data replication in a storage system
KR102578188B1 (ko) * 2018-05-15 2023-09-14 에스케이하이닉스 주식회사 메모리 컨트롤러 및 이의 동작 방법
US10942847B2 (en) 2018-12-18 2021-03-09 Intel Corporation Technologies for efficiently performing scatter-gather operations
JP7293813B2 (ja) * 2019-04-01 2023-06-20 富士通株式会社 半導体装置
US11023320B2 (en) * 2019-04-04 2021-06-01 Intel Corporation Technologies for providing multiple levels of error correction

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959774A (en) * 1984-07-06 1990-09-25 Ampex Corporation Shadow memory system for storing variable backup blocks in consecutive time periods
DE69024086T2 (de) * 1989-04-13 1996-06-20 Sundisk Corp EEprom-System mit Blocklöschung
JP2582487B2 (ja) * 1991-07-12 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体メモリを用いた外部記憶システム及びその制御方法
US5359569A (en) * 1991-10-29 1994-10-25 Hitachi Ltd. Semiconductor memory
TW261687B (zh) * 1991-11-26 1995-11-01 Hitachi Seisakusyo Kk
JPH0750558B2 (ja) * 1992-09-22 1995-05-31 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性メモリ
JP3215237B2 (ja) * 1993-10-01 2001-10-02 富士通株式会社 記憶装置および記憶装置の書き込み／消去方法
JPH09244961A (ja) * 1996-03-08 1997-09-19 Mitsubishi Electric Corp フラッシュａｔａ−ｐｃカード

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101853693A (zh) * 2009-04-02 2010-10-06 智微科技股份有限公司 储存装置以及延长储存装置的使用寿命的方法

Also Published As

Publication number Publication date
DE69716233D1 (de) 2002-11-14
EP0862762A1 (en) 1998-09-09
DE69716233T2 (de) 2003-02-20
WO1998008166A1 (en) 1998-02-26
KR100383404B1 (ko) 2003-07-16
US6058047A (en) 2000-05-02
KR20000064279A (ko) 2000-11-06
JP2001501000A (ja) 2001-01-23
ATE225961T1 (de) 2002-10-15
EP0862762B1 (en) 2002-10-09

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