WO2024048122A1 - Dispositif de traitement de substrat et procédé de traitement de substrat - Google Patents

Dispositif de traitement de substrat et procédé de traitement de substrat Download PDF

Info

Publication number
WO2024048122A1
WO2024048122A1 PCT/JP2023/026933 JP2023026933W WO2024048122A1 WO 2024048122 A1 WO2024048122 A1 WO 2024048122A1 JP 2023026933 W JP2023026933 W JP 2023026933W WO 2024048122 A1 WO2024048122 A1 WO 2024048122A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
processing
cup
nozzle
liquid
Prior art date
Application number
PCT/JP2023/026933
Other languages
English (en)
Japanese (ja)
Inventor
脩平 根本
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Publication of WO2024048122A1 publication Critical patent/WO2024048122A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method that perform predetermined substrate processing on a substrate using a processing liquid.
  • the substrates include semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, glass substrates for photomasks, substrates for solar cells, etc. (hereinafter simply referred to as "substrate").
  • the processing includes bevel processing.
  • an apparatus described in Patent Document 1 is known as a substrate processing apparatus that performs substrate processing such as chemical liquid processing and cleaning processing by supplying a processing liquid to a substrate such as a semiconductor wafer while rotating the substrate.
  • an outer cup is provided as a scattering prevention member to catch processing liquid and the like scattered from a substrate being rotated during substrate processing.
  • the outer cup is arranged so that its inner peripheral surface faces the outer periphery of the substrate and surrounds the outer periphery of the substrate being rotated. For this reason, the outer cup collects droplets of the processing liquid shaken off from the rotated substrate.
  • a plurality of cup cleaning nozzles are provided on the base portion to clean the inner circumferential surface of the outer cup.
  • a cup cleaning member is arranged above the base portion.
  • a cleaning liquid (corresponding to an example of the "coupling liquid" of the present invention) is supplied from the cup cleaning nozzle to the inner circumferential surface of the outer cup through a guide section provided on the cup cleaning member. Therefore, in order to clean the entire inner peripheral surface of the outer cup, it is necessary to provide a large number of cup cleaning nozzles. Moreover, it is difficult to supply all of the cleaning liquid discharged from each cup cleaning nozzle toward the guide part to the outer cup, and a part of the cleaning liquid may overflow from the guide part.
  • This invention was made in view of the above problems, and an object thereof is to provide a substrate processing apparatus and a substrate processing method that can reduce environmental burden by reducing the amount of coupling liquid required for coupling processing. shall be.
  • One aspect of the present invention is a substrate processing apparatus, which includes a substrate holder that is rotatably provided around a rotation axis that extends in the vertical direction while holding a substrate, and a substrate that surrounds the outer periphery of the substrate held by the substrate holder.
  • a rotating cup part that is rotatably provided around the rotation axis while rotating, a rotating mechanism that rotates the substrate holding part and the rotating cup part, and a processing liquid being supplied to the substrate held by the rotating substrate holding part.
  • Coupling treatment that removes processing liquid from the rotating cup by supplying the coupling liquid directly from the rotating shaft side to the processing mechanism that performs the specified substrate processing and the rotating cup that collects the processing liquid scattered from the substrate.
  • a control unit that controls the rotating mechanism and the rinsing liquid supply unit so as to supply the coupling liquid to the rotating cup unit while rotating the rotating cup unit after substrate processing is performed. It is characterized by being prepared.
  • Another aspect of the present invention is a substrate processing method, which includes supplying a processing liquid to the substrate while surrounding the outer periphery of the substrate rotating around a rotation axis extending in the vertical direction with a rotating cup part.
  • the process of removing the processing liquid from the rotating cup part by directly supplying the coupling liquid to the rotating cup part from the rotating shaft side.
  • the coupling liquid is directly supplied to the rotating cup part from inside the rotating cup part while the rotating cup part collecting the processing liquid rotates around the rotation axis. Therefore, the amount of coupling liquid used can be significantly reduced compared to the amount used in the substrate processing apparatus described in Patent Document 1.
  • the environmental load can be reduced by reducing the amount of coupling liquid required for coupling the rotating cup portion that collects the processing liquid scattered from the substrate.
  • All of the plurality of constituent elements of each aspect of the present invention described above are not essential, and may be used to solve some or all of the above-mentioned problems or to achieve some or all of the effects described in this specification. In order to achieve this, it is possible to change or delete some of the plurality of components, replace them with other new components, or delete part of the limited content as appropriate.
  • technical features included in one aspect of the present invention described above may be implemented. It is also possible to combine some or all of the technical features included in the other aspects of the present invention described above to form an independent form of the present invention.
  • FIG. 1 is a plan view showing a schematic configuration of a substrate processing system equipped with a first embodiment of a substrate processing apparatus according to the present invention.
  • 1 is a diagram showing the configuration of a first embodiment of a substrate processing apparatus according to the present invention.
  • FIG. 2 is a diagram schematically showing a configuration of a chamber and a configuration installed in the chamber.
  • FIG. 3 is a plan view schematically showing the configuration of a substrate processing section installed on a base member.
  • FIG. 3 is a diagram showing the dimensional relationship between a substrate held by a spin chuck and a rotating cup portion. It is a figure which shows a part of rotating cup part and fixed cup part.
  • FIG. 3 is an external perspective view showing the configuration of the upper surface protection heating mechanism.
  • FIG. 8 is a sectional view of the upper surface protection heating mechanism shown in FIG. 7.
  • FIG. 3 is a perspective view showing a processing liquid discharge nozzle on the upper surface side that is installed in the processing mechanism and a coupling liquid discharge nozzle on the upper surface side that is installed in the coupling mechanism.
  • FIG. 3 is a diagram schematically showing the configuration of a nozzle moving section.
  • FIG. 3 is a schematic diagram showing nozzle positions when performing bevel processing. It is a schematic diagram which shows the nozzle position when performing a coupling rinse process.
  • FIG. 3 is a perspective view showing a processing liquid discharge nozzle on the lower surface side that is installed in the processing mechanism and a nozzle support section that supports the nozzle.
  • 3 is a flowchart showing bevel processing performed as an example of a substrate processing operation by the substrate processing apparatus shown in FIG. 2.
  • FIG. FIG. 2 is a diagram schematically showing the configuration and operation of a second embodiment of the substrate processing apparatus according to the present invention.
  • FIG. 1 is a plan view showing a schematic configuration of a substrate processing system equipped with a first embodiment of the substrate processing apparatus according to the present invention.
  • This is a schematic diagram that does not show the external appearance of the substrate processing system 100, but clearly shows the internal structure of the substrate processing system 100 by excluding the outer wall panel and other parts of the structure.
  • This substrate processing system 100 is installed in, for example, a clean room, and is a single-wafer type device that processes one substrate W on which a circuit pattern or the like (hereinafter referred to as a "pattern") is formed only on one main surface. Then, in the processing unit 1 installed in the substrate processing system 100, substrate processing using the processing liquid is executed.
  • the pattern-formed surface (one main surface) on which a pattern is formed among both main surfaces of the substrate is referred to as the "front surface”, and the other main surface on the opposite side, on which no pattern is formed, is referred to as the "back surface”. It is called. Further, the surface facing downward is referred to as the “lower surface”, and the surface facing upward is referred to as the "upper surface”. Furthermore, in this specification, the term “pattern-formed surface” refers to a surface on which a concavo-convex pattern is formed in an arbitrary region of the substrate.
  • the "substrate” in this embodiment includes a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, and a substrate for a magnetic disk.
  • Various substrates such as substrates and magneto-optical disk substrates can be applied.
  • the following explanation will be made with reference to the drawings, taking as an example a substrate processing apparatus mainly used for processing semiconductor wafers, but the invention is similarly applicable to the processing of the various substrates exemplified above.
  • the substrate processing system 100 has a substrate processing area 110 in which a substrate W is processed.
  • An indexer section 120 is provided adjacent to this substrate processing area 110.
  • the indexer unit 120 includes a container C for accommodating the substrates W (FOUP (Front Opening Unified Pod) for accommodating a plurality of substrates W in a sealed state), a SMIF (Standard It has a container holder 121 that can hold a plurality of pods (mechanical interface), OC (open cassette), etc.).
  • the indexer section 120 is also an indexer for accessing the container C held in the container holding section 121 and taking out an unprocessed substrate W from the container C or storing a processed substrate W in the container C.
  • a robot 122 is provided.
  • Each container C accommodates a plurality of substrates W in a substantially horizontal posture.
  • the indexer robot 122 includes a base portion 122a fixed to the device housing, a multi-joint arm 122b rotatable around a vertical axis with respect to the base portion 122a, and a hand attached to the tip of the multi-joint arm 122b. 122c.
  • the hand 122c has a structure that allows the substrate W to be placed and held on its upper surface.
  • An indexer robot having such a multi-joint arm and a hand for holding a substrate is well known, so a detailed description thereof will be omitted.
  • a mounting table 112 is provided on which the substrate W from the indexer robot 122 can be placed. Further, in a plan view, a substrate transfer robot 111 is arranged approximately at the center of the substrate processing area 110. Furthermore, a plurality of processing units 1 are arranged so as to surround this substrate transfer robot 111. Specifically, a plurality of processing units 1 are arranged facing the space where the substrate transfer robot 111 is arranged. For these processing units 1, the substrate transfer robot 111 randomly accesses the mounting table 112 and transfers the substrate W to and from the mounting table 112. On the other hand, each processing unit 1 executes a predetermined process on a substrate W, and corresponds to a substrate processing apparatus according to the present invention.
  • these processing units (substrate processing apparatuses) 1 have the same function. Therefore, parallel processing of multiple substrates W is possible. Note that if the substrate transfer robot 111 can directly transfer the substrate W from the indexer robot 122, the mounting table 112 is not necessarily required.
  • FIG. 2 is a diagram showing the configuration of the first embodiment of the substrate processing apparatus according to the present invention.
  • FIG. 3 is a diagram schematically showing the configuration of the chamber and the configuration installed in the chamber.
  • the chamber 11 used in the substrate processing apparatus (processing unit) 1 includes a bottom wall 11a that is rectangular in plan view from vertically above, and four panels that stand up from the periphery of the bottom wall 11a. It has side walls 11b to 11e, and a ceiling wall 11f that covers the upper ends of the side walls 11b to 11e.
  • a substantially rectangular parallelepiped-shaped internal space 12 is formed.
  • the base support members 16, 16 are fixed to the upper surface of the bottom wall 11a with fastening parts such as bolts while being spaced apart from each other. That is, the base support member 16 is erected from the bottom wall 11a.
  • a base member 17 is fixed to the upper ends of these base support members 16, 16 with fastening parts such as bolts.
  • the base member 17 has a smaller planar size than the bottom wall 11a, and is made of a plate material that is thicker and has higher rigidity than the bottom wall 11a. As shown in FIG. 2, the base member 17 is lifted vertically upward from the bottom wall 11a by the base support members 16, 16. That is, at the bottom of the internal space 12 of the chamber 11, a so-called raised floor structure is formed.
  • this base member 17 is finished so as to be able to install a substrate processing section SP that performs substrate processing on the substrate W, and the substrate processing section SP is installed on the upper surface.
  • Each part constituting the substrate processing section SP is electrically connected to a control unit 10 that controls the entire apparatus, and operates according to instructions from the control unit 10. Note that the shape of the base member 17 and the configuration and operation of the substrate processing section SP will be described in detail later.
  • a fan filter unit (FFU) 13 is attached to the ceiling wall 11f of the chamber 11.
  • the fan filter unit 13 further purifies the air in the clean room in which the substrate processing apparatus 1 is installed and supplies the purified air to the internal space 12 in the chamber 11 .
  • the fan filter unit 13 includes a fan and a filter (for example, a HEPA (High Efficiency Particulate Air) filter) for taking in air in the clean room and sending it out into the chamber 11. to supply clean air. As a result, a downflow of clean air is formed in the internal space 12 within the chamber 11 . Further, in order to uniformly disperse the clean air supplied from the fan filter unit 13, a punching plate 14 having a large number of blowing holes is provided directly below the ceiling wall 11f.
  • a punching plate 14 having a large number of blowing holes is provided directly below the ceiling wall 11f.
  • a transport opening 11b1 is provided in the side wall 11b facing the substrate transport robot 111 among the four side walls 11b to 11e, and the inner space 12 and the chamber 11 are provided with a transport opening 11b1. is communicated with the outside. Therefore, the hand (not shown) of the substrate transfer robot 111 can access the substrate processing section SP through the transfer opening 11b1. That is, by providing the transport opening 11b1, it is possible to carry the substrate W into and out of the internal space 12. Further, a shutter 15 for opening and closing this transport opening 11b1 is attached to the side wall 11b.
  • a shutter opening/closing mechanism (not shown) is connected to the shutter 15, and opens and closes the shutter 15 in response to opening/closing commands from the control unit 10. More specifically, in the substrate processing apparatus 1, when carrying the unprocessed substrate W into the chamber 11, the shutter opening/closing mechanism opens the shutter 15, and the hand of the substrate transfer robot 111 moves the unprocessed substrate W into a face-up posture. The substrate is transported to the substrate processing section SP. That is, the substrate W is placed on the spin chuck 21 of the substrate processing section SP with the upper surface Wf facing upward. Then, when the hand of the substrate transfer robot 111 retreats from the chamber 11 after carrying in the substrate, the shutter opening/closing mechanism closes the shutter 15.
  • the substrate processing section SP performs bevel processing on the peripheral edge portion Ws of the substrate W as an example of the "substrate processing" of the present invention. Further, after the bevel processing is finished, the shutter opening/closing mechanism opens the shutter 15 again, and the hand of the substrate transfer robot 111 carries out the processed substrate W from the substrate processing section SP. In this manner, in this embodiment, the internal space 12 of the chamber 11 is maintained at room temperature.
  • "normal temperature” means a temperature range of 5°C to 35°C.
  • the side wall 11d is located on the opposite side of the side wall 11b across the substrate processing section SP (FIG. 2) installed on the base member 17.
  • This side wall 11d is provided with a maintenance opening 11d1.
  • the maintenance opening 11d1 is opened, as shown in the figure. Therefore, the operator can access the substrate processing section SP from the outside of the apparatus through the maintenance opening 11d1.
  • the lid member 19 is attached so as to close the maintenance opening 11d1. In this manner, in this embodiment, the lid member 19 is removably attached to the side wall 11d.
  • a heated gas supply section 47 for supplying heated inert gas (in this embodiment, nitrogen gas) to the substrate processing section SP is attached to the outer surface of the side wall 11e.
  • This heated gas supply section 47 has a built-in heater 471.
  • a substrate processing section SP is installed on the upper surface of the base member 17 having a raised floor structure. The configuration of the substrate processing section SP will be described below with reference to FIGS. 2 to 13.
  • FIG. 4 is a plan view schematically showing the configuration of the substrate processing section installed on the base member.
  • a coordinate system in which the Z direction is the vertical direction and the XY plane is the horizontal plane is appropriately used.
  • the horizontal direction parallel to the transport path TP of the substrate W is defined as the "X direction”
  • the horizontal direction perpendicular thereto is defined as the "Y direction”.
  • the directions from the internal space 12 of the chamber 11 toward the transport opening 11b1 and the maintenance opening 11d1 are referred to as the "+X direction” and the "-X direction,” respectively.
  • CR liquid in the figure means a coupling liquid.
  • the substrate processing section SP includes a holding rotation mechanism 2, a scattering prevention mechanism 3, an upper surface protection heating mechanism 4, a processing mechanism 5, an atmosphere separation mechanism 6, an elevating mechanism 7, a centering mechanism 8, a substrate observation mechanism 9, and a coupling mechanism 200. ing. These mechanisms are provided on the base member 17. That is, based on the base member 17 having higher rigidity than the chamber 11, the holding rotation mechanism 2, the scattering prevention mechanism 3, the upper surface protection heating mechanism 4, the processing mechanism 5, the atmosphere separation mechanism 6, the lifting mechanism 7, the centering mechanism 8, The substrate observation mechanism 9 and the coupling mechanism 200 are arranged in a predetermined positional relationship with each other.
  • the holding/rotating mechanism 2 includes a substrate holding section 2A that holds the substrate W in a substantially horizontal position with the surface of the substrate W facing upward, a substrate holding section 2A holding the substrate W, and a scattering mechanism.
  • a rotation mechanism 2B that synchronously rotates a part of the prevention mechanism 3 is provided. Therefore, when the rotation mechanism 2B operates in response to a rotation command from the control unit 10, the substrate W and the rotation cup portion 31 of the scattering prevention mechanism 3 are rotated around the rotation axis AX extending parallel to the vertical direction Z.
  • the substrate holder 2A includes a spin chuck 21, which is a disk-shaped member smaller than the substrate W.
  • the spin chuck 21 is provided so that its upper surface is substantially horizontal and its center axis coincides with the rotation axis AX.
  • the center of the substrate holder 2A (corresponding to the central axis of the spin chuck 21) is offset from the center 11g of the chamber 11 in the (+X) direction. That is, in a plan view from above the chamber 11, the central axis (rotation axis AX) of the spin chuck 21 is located at a processing position shifted from the center 11g of the internal space 12 by a distance Lof toward the transport opening 11b1.
  • the substrate holding section 2A is arranged.
  • the virtual lines parallel to TP are respectively referred to as "first virtual horizontal line VL1" and "second virtual horizontal line VL2.”
  • a cylindrical rotating shaft portion 22 is connected to the lower surface of the spin chuck 21 .
  • the rotating shaft portion 22 extends in the vertical direction Z with its axis aligned with the rotating axis AX. Furthermore, a rotation mechanism 2B is connected to the rotation shaft portion 22.
  • the rotation mechanism 2B includes a motor 23 that generates a rotational driving force for rotating the substrate holding section 2A and the rotational cup section 31 of the scattering prevention mechanism 3, and a power transmission section 24 for transmitting the rotational driving force. are doing.
  • the motor 23 has a rotating shaft 231 that rotates as rotational driving force is generated.
  • the rotary shaft 231 is provided at the motor attachment portion 171 of the base member 17 in a posture in which it extends vertically downward. More specifically, as shown in FIG. 3, the motor attachment portion 171 is a portion cut out in the (+X) direction while facing the maintenance opening 11d1.
  • the notch width (Y-direction size) of this motor attachment portion 171 is approximately the same as the Y-direction width of the motor 23 . Therefore, the motor 23 is movable in the X direction while its side surface is engaged with the motor attachment portion 171.
  • the motor 23 is fixed to the base member 17 while being positioned in the X direction.
  • a first pulley 241 is attached to the tip of the rotating shaft 231 that protrudes downward from the base member 17 .
  • a second pulley 242 is attached to the lower end of the substrate holding section 2A. More specifically, the lower end of the substrate holding portion 2A is inserted into a through hole provided in the spin chuck attachment portion 172 of the base member 17, and protrudes below the base member 17.
  • a second pulley 242 is provided on this protruding portion.
  • An endless belt 243 is stretched between the first pulley 241 and the second pulley 242. In this way, in this embodiment, the power transmission section 24 is configured by the first pulley 241, the second pulley 242, and the endless belt 243.
  • a through hole (not shown) is provided in the center of the spin chuck 21 and communicates with the internal space of the rotating shaft portion 22.
  • a pump 26 is connected to the internal space via a pipe 25 provided with a valve (not shown).
  • the pump 26 and the valve are electrically connected to the control unit 10 and operate according to commands from the control unit 10.
  • negative pressure and positive pressure are selectively applied to the spin chuck 21.
  • the pump 26 applies negative pressure to the spin chuck 21 with the substrate W placed on the upper surface of the spin chuck 21 in a substantially horizontal position, the spin chuck 21 attracts and holds the substrate W from below.
  • the pump 26 applies positive pressure to the spin chuck 21, the substrate W can be removed from the top surface of the spin chuck 21. Further, when the suction of the pump 26 is stopped, the substrate W becomes horizontally movable on the upper surface of the spin chuck 21.
  • a nitrogen gas supply section 29 is connected to the spin chuck 21 via a pipe 28 provided at the center of the rotating shaft section 22.
  • the nitrogen gas supply section 29 supplies room temperature nitrogen gas supplied from a utility of the factory where the substrate processing system 100 is installed to the spin chuck 21 at a flow rate and timing according to a gas supply command from the control unit 10. , nitrogen gas is caused to flow radially outward from the center on the lower surface Wb side of the substrate W.
  • nitrogen gas is used in this embodiment, other inert gases may be used.
  • flow rate means the amount by which a fluid such as nitrogen gas moves per unit time.
  • the rotation mechanism 2B includes a power transmission section 27 (FIG. 2) in order to not only rotate the spin chuck 21 integrally with the substrate W but also rotate the rotating cup section 31 in synchronization with the rotation.
  • the power transmission section 27 is composed of an annular member 27a (FIG. 2) made of a non-magnetic material or resin, a spin chuck side magnet (not shown) built into the annular member, and a rotary cup section 31. It has a cup-side magnet (not shown) built into a certain lower cup 32.
  • the annular member 27a is attached to the rotating shaft portion 22 as shown in FIG. 2, and is rotatable together with the rotating shaft portion 22 around the rotating axis AX. More specifically, as shown in FIG.
  • the rotating shaft portion 22 has a flange portion (not shown) extending radially outward at a position directly below the spin chuck 21.
  • the annular member 27a is arranged concentrically with respect to the flange portion, and is connected and fixed by bolts (not shown) or the like.
  • a plurality of spin chuck side magnets are arranged radially around the rotation axis AX and at equal angular intervals.
  • one of the two adjacent spin chuck side magnets is arranged so that the outer and inner sides are N and S poles, respectively, and the other side is arranged so that the outer and inner sides are S and N poles, respectively. It is arranged like this.
  • cup side magnets Similar to these spin chuck side magnets, a plurality of cup side magnets are arranged radially around the rotation axis AX and at equal angular intervals. These cup side magnets are built into the lower cup 32.
  • the lower cup 32 is a component of the scattering prevention mechanism 3, which will be described next, and has an annular shape. That is, the lower cup 32 has an inner peripheral surface that can face the outer peripheral surface of the annular member 27a. The inner diameter of this inner peripheral surface is larger than the outer diameter of the annular member 27a.
  • An engaging pin and a connecting magnet are provided on the upper surface of the outer periphery of the lower cup 32, and the upper cup 33 is connected to the lower cup 32 by these, and this connecting body functions as the rotating cup portion 31.
  • the lower cup 32 is supported on the upper surface of the base member 17 by a bearing (not shown in the drawings) so as to be rotatable around the rotation axis AX in the above arrangement.
  • the cup-side magnets are arranged radially around the rotation axis AX and at equal angular intervals. Further, the arrangement of the two cup-side magnets adjacent to each other is also the same as that of the spin-chuck side magnets. That is, on the one hand, the outside and inside are arranged to be north and south poles, respectively, and on the other hand, the outside and inside are arranged so that they are south and north poles, respectively.
  • the lower cup 32 is moved by the air due to the magnetic force between the spin chuck side magnet and the cup side magnet. It rotates in the same direction as the annular member 27a while maintaining the gap (gap between the annular member 27a and the lower cup 32).
  • the rotating cup portion 31 rotates around the rotation axis AX. That is, the rotating cup portion 31 rotates in the same direction as the substrate W and in synchronization with the substrate W.
  • the scattering prevention mechanism 3 includes a rotating cup part 31 that can rotate around the rotation axis AX while surrounding the outer periphery of the substrate W held by the spin chuck 21, and a fixed cup part that is fixedly provided so as to surround the rotating cup part 31. 34.
  • the rotating cup portion 31 is provided so as to be rotatable around the rotation axis AX while surrounding the outer periphery of the rotating substrate W by connecting the upper cup 33 to the lower cup 32 .
  • FIG. 5 is a diagram showing the dimensional relationship between the substrate held by the spin chuck and the rotating cup portion.
  • FIG. 6 is a diagram showing part of the rotating cup part and the fixed cup part.
  • the lower cup 32 has an annular shape.
  • the outer diameter of the lower cup 32 is larger than the outer diameter of the substrate W, and the lower cup 32 is arranged to be rotatable around the rotation axis AX in a state in which it protrudes in the radial direction from the substrate W held by the spin chuck 21 when viewed vertically from above. be done.
  • engagement pins (not shown) that stand vertically upward along the circumferential direction and flat lower magnets (not shown) are attached alternately. There is.
  • the upper cup 33 has a lower annular part 331, an upper annular part 332, and an inclined part 333 connecting these parts, as shown in FIGS. 2, 3, and 5.
  • the outer diameter D331 of the lower annular portion 331 is the same as the outer diameter D32 of the lower cup 32, and the lower annular portion 331 is located vertically above the peripheral edge 321 of the lower cup 32.
  • an upper magnet is attached in a region corresponding to the vertically upper part of the lower magnet. Therefore, the upper cup 33 can be engaged with and detached from the lower cup 32 with the recess and the upper magnet facing the engagement pin and the lower magnet, respectively.
  • the upper cup 33 can be raised and lowered in the vertical direction by the raising and lowering mechanism 7.
  • a transport space for loading and unloading the substrate W is formed between the upper cup 33 and the lower cup 32 in the vertical direction.
  • the recess fits over the tip of the engagement pin, and the upper cup 33 is positioned horizontally with respect to the lower cup 32.
  • the upper magnet approaches the lower magnet, and the above-positioned upper cup 33 and lower cup 32 are coupled to each other by the attractive force generated between them.
  • the upper cup 33 and the lower cup 32 are integrated in the vertical direction with a gap GPc extending in the horizontal direction being formed.
  • the rotary cup portion 31 is rotatable around the rotation axis AX while forming the gap GPc.
  • the outer diameter D332 of the upper annular portion 332 is slightly smaller than the outer diameter D331 of the lower annular portion 331. Also, when comparing the diameters d331 and d332 of the inner circumferential surfaces of the lower annular portion 331 and the upper annular portion 332, the lower annular portion 331 is larger than the upper annular portion 332, and when viewed in plan from vertically above, the lower annular portion 331 is larger than the upper annular portion 332. , the inner circumferential surface of the upper annular portion 332 is located inside the inner circumferential surface of the lower annular portion 331.
  • the inner circumferential surface of the upper annular portion 332 and the inner circumferential surface of the lower annular portion 331 are connected by the inclined portion 333 over the entire circumference of the upper cup 33. Therefore, the inner circumferential surface of the inclined portion 333, that is, the surface surrounding the substrate W, forms an inclined surface 334. That is, as shown in FIG. 6, the inclined portion 333 surrounds the outer periphery of the rotating substrate W and can collect droplets scattered from the substrate W, and forms a space surrounded by the upper cup 33 and the lower cup 32. functions as a collection space SPc.
  • the height position of each part in the vertical direction Z is called as follows. That is, as shown in FIG.
  • the position of the upper surface (front surface) of the substrate W held by the spin chuck 21 is referred to as the "height position Zw", and the position of the disk portion 42 of the upper surface protection heating mechanism 4, which will be described in detail later
  • the position of the upper surface of is called “height position Z42”.
  • the inclined portion 333 facing the collection space SPc is inclined toward the upper side of the peripheral edge of the substrate W from the lower annular portion 331 that is connected to the lower cup 32 to constitute a connecting portion. Therefore, as shown in FIG. 6, droplets of the processing liquid scattered from the rotating substrate W are collected on the inclined surface 334 of the inclined portion 333 at the height position Zw. Then, the droplet flows along the inclined surface 334 to the lower end of the upper cup 33, that is, the lower annular portion 331, and can be further discharged to the outside of the rotary cup portion 31 via the gap GPc.
  • the fixed cup part 34 is provided so as to surround the rotating cup part 31, and forms a discharge space SPe.
  • the fixed cup part 34 has a liquid receiving part 341 and an exhaust part 342 provided inside the liquid receiving part 341.
  • the liquid receiving portion 341 has a cup structure that opens so as to face the opening on the side opposite to the substrate (the opening on the left hand side in FIG. 6) of the gap GPc. That is, the internal space of the liquid receiving part 341 functions as a discharge space SPe, and is communicated with the collection space SPc via the gap GPc. Therefore, the droplets collected by the rotary cup portion 31 are guided to the discharge space SPe through the gap GPc together with the gas component. The droplets are then collected at the bottom of the liquid receiving portion 341 and drained from the fixed cup portion 34.
  • gaseous components are collected at the exhaust site 342.
  • This exhaust region 342 is separated from the liquid receiving region 341 via a partition wall 343.
  • a gas guide section 344 is arranged above the partition wall 343.
  • the gas guide portion 344 extends from a position directly above the partition wall 343 into the exhaust space SPe and the exhaust portion 342, thereby covering the partition wall 343 from above and forming a gas component distribution path having a labyrinth structure. are doing. Therefore, the gas component of the fluid that has flowed into the liquid receiving part 341 is collected in the exhaust part 342 via the above-mentioned circulation path.
  • This exhaust section 342 is connected to the exhaust section 38.
  • the pressure in the fixed cup section 34 is adjusted, and the gas component within the exhaust section 342 is efficiently exhausted.
  • the pressure and flow rate of the exhaust space SPe are adjusted by precise control of the exhaust section 38.
  • the pressure in the discharge space SPe is lower than the pressure in the collection space SPc.
  • FIG. 7 is an external perspective view showing the configuration of the upper surface protection heating mechanism.
  • FIG. 8 is a sectional view of the upper surface protection heating mechanism shown in FIG. 7.
  • the upper surface protection heating mechanism 4 has a blocking plate 41 arranged above the upper surface Wf of the substrate W held by the spin chuck 21.
  • This blocking plate 41 has a disk portion 42 held in a horizontal position.
  • the disk portion 42 has a built-in heater 421 that is driven and controlled by a heater drive portion 422 .
  • This disk portion 42 has a slightly smaller diameter than the substrate W.
  • the disk portion 42 is supported by the support member 43 so that the lower surface of the disk portion 42 covers the surface area of the upper surface Wf of the substrate W excluding the peripheral edge portion Ws from above.
  • reference numeral 44 in FIG. 7 is a notch provided at the peripheral edge of the disk portion 42, and this is provided to prevent interference with the processing liquid discharge nozzle included in the processing mechanism 5.
  • the cutout portion 44 is open toward the outside in the radial
  • the lower end portion of the support member 43 is attached to the center portion of the disc portion 42.
  • a cylindrical through hole is formed to vertically penetrate the support member 43 and the disc portion 42 .
  • a central nozzle 45 is inserted vertically into the through hole.
  • This central nozzle 45 is connected to a heating gas supply section 47 via a pipe 46, as shown in FIG.
  • the heated gas supply unit 47 heats room temperature nitrogen gas supplied from the utility of the factory where the substrate processing system 100 is installed, etc. using the heater 471, and supplies the nitrogen gas at a flow rate and timing according to a heated gas supply command from the control unit 10. It is supplied to the substrate processing section SP.
  • the heated gas supply section 47 having the heater 471 is arranged outside the chamber 11, as shown in FIG. Further, in this embodiment, a ribbon heater 48 is attached to a part of the pipe 46. The ribbon heater 48 generates heat in response to a heating command from the control unit 10 and heats the nitrogen gas flowing inside the pipe 46 .
  • the nitrogen gas thus heated (hereinafter referred to as "heated gas") is forced toward the central nozzle 45 and is discharged from the central nozzle 45.
  • heating gas is supplied while the disk portion 42 is positioned at a processing position close to the substrate W held by the spin chuck 21, so that the heating gas is heated to the upper surface Wf of the substrate W.
  • the water flows from the center of the space SPa between the space SPa and the disc portion 42 with a built-in heater toward the periphery. This makes it possible to suppress the atmosphere around the substrate W from entering the upper surface Wf of the substrate W. As a result, droplets contained in the atmosphere can be effectively prevented from being drawn into the space SPa between the substrate W and the disk portion 42.
  • the entire upper surface Wf is heated by the heating by the heater 421 and the heating gas, and the in-plane temperature of the substrate W can be made uniform. Thereby, it is possible to suppress the substrate W from warping and to stabilize the position where the processing liquid lands.
  • the upper end of the support member 43 is fixed to a beam member 49 extending along the first virtual horizontal line VL1.
  • This beam member 49 is connected to a lifting mechanism 7 attached to the upper surface of the base member 17, and is raised and lowered by the lifting mechanism 7 in response to commands from the control unit 10.
  • the beam member 49 is positioned downward, so that the disk portion 42 connected to the beam member 49 via the support member 43 is located at the processing position.
  • the lifting mechanism 7 raises the beam member 49 in response to a lifting command from the control unit 10
  • the beam member 49, the support member 43, and the disc part 42 rise integrally, and the upper cup 33 also moves in conjunction.
  • the cup 32 separates from the lower cup 32 and rises. This widens the space between the spin chuck 21, the upper cup 33, and the disk portion 42, and it becomes possible to carry the substrate W into and out of the spin chuck 21.
  • the processing mechanism 5 includes a processing liquid discharge nozzle 51F (FIG. 4) arranged on the upper surface side of the substrate W, a processing liquid discharge nozzle 51B (FIG. 2) arranged on the lower surface side of the substrate W, and a processing liquid discharge nozzle 51F arranged on the lower surface side of the substrate W. , 51B.
  • a processing liquid discharge nozzle 51F (FIG. 4) arranged on the upper surface side of the substrate W
  • a processing liquid discharge nozzle 51B FIG. 2
  • FIG. 9 is a perspective view showing the processing liquid discharge nozzle on the upper surface side installed in the processing mechanism and the coupling liquid discharge nozzle on the upper surface side installed in the coupling mechanism, in which each nozzle is viewed diagonally from below.
  • the three upper surface processing nozzles 51F serve as upper surface side processing liquid discharge nozzles that discharge the processing liquid from above the substrate W held by the spin chuck 21 toward the peripheral edge Ws of the upper surface Wf of the substrate W.
  • a processing liquid supply section 52 is connected to them.
  • processing liquid supply section 52 is configured to be able to supply SC1, DHF, and functional water (CO2 water, etc.) as processing liquids, and SC1, DHF, and functional water are supplied independently from the three upper processing nozzles 51F. It is possible to discharge.
  • each upper surface processing nozzle 51F As shown in column (a) of FIG. 9, a discharge port 511 for discharging the processing liquid is provided on the lower surface of the tip.
  • the lower part of a plurality of (three in this embodiment) top surface processing nozzles 51F is shown in FIG. It is arranged in the notch 44 of the disk part 42 together with the rinse liquid discharge nozzle 201 shown in the partially enlarged plan view, and the upper part of the upper surface treatment nozzle 51F is integrally attached to the nozzle holder 53 with the rinse liquid discharge nozzle 201.
  • This nozzle holder 53 is connected to a nozzle moving section 54.
  • FIG. 10 is a diagram schematically showing the configuration of the nozzle moving section.
  • FIG. 11A is a schematic diagram showing nozzle positions when performing bevel processing
  • FIG. 11B is a schematic diagram showing nozzle positions when performing coupling processing.
  • column (a) is a side view of a nozzle that discharges the processing liquid or coupling liquid
  • column (b) is a plan view of the nozzle viewed from above.
  • the symbol AR indicates the radial direction from the rotation axis AX toward the nozzle discharging the processing liquid or the coupling liquid.
  • the linear actuator 542 includes a motor (hereinafter referred to as "nozzle drive motor") 543 that functions as a drive source for nozzle movement in the radial direction It has a motion conversion mechanism 545 that converts the motion into linear motion and reciprocates the slider 544 in the radial direction D1. Furthermore, in the motion conversion mechanism 545, a guide such as an LM guide (registered trademark) is used to stabilize the movement of the slider 544 in the radial direction D1.
  • a guide such as an LM guide (registered trademark) is used to stabilize the movement of the slider 544 in the radial direction D1.
  • a head support member 547 is connected to the slider 544, which is thus reciprocated in the radial direction X, via a connecting member 546.
  • This head support member 547 has a rod shape extending in the radial direction X.
  • An end portion of the head support member 547 in the (+D1) direction is fixed to the slider 544.
  • the end of the head support member 547 in the (-D1) direction extends horizontally toward the spin chuck 21, and the nozzle head 56 is attached to the tip thereof. Therefore, when the nozzle drive motor 543 rotates in response to a nozzle movement command from the control unit 10, the nozzle drive motor 543 rotates in the (+D1) direction or (-D1) direction corresponding to the rotation direction, and by a distance corresponding to the rotation amount.
  • Slider 544, head support member 547, and nozzle head 56 move integrally.
  • the upper surface treatment nozzle 51F attached to the nozzle head 56 is positioned in the radial direction D1.
  • the spring member 548 provided in the motion conversion mechanism 545 is compressed by the slider 544, and Apply a biasing force in the -D1) direction.
  • backlash included in the motion conversion mechanism 545 can be controlled.
  • the motion conversion mechanism 545 since the motion conversion mechanism 545 has mechanical parts such as guides, it is virtually difficult to make the backlash along the radial direction D1 zero, and unless sufficient consideration is given to this, the radial direction The positioning accuracy of the upper surface processing nozzle 51F at D1 is reduced. Therefore, in this embodiment, by providing the spring member 548, when the upper surface processing nozzle 51F is stationary at the home position, the backlash is always biased in the (-D1) direction. As a result, the following effects can be obtained.
  • the nozzle moving unit 54 In response to a nozzle movement command from the control unit 10, the nozzle moving unit 54 collectively drives the three upper surface treatment nozzles 51F and the rinse liquid discharge nozzle 201 in the radial direction D1.
  • This nozzle movement command includes information regarding the nozzle movement distance. Based on this information, the upper surface treatment nozzle 51F and the rinse liquid discharge nozzle 201 are moved by the designated nozzle movement distance in the radial direction D1.
  • the upper surface processing nozzle 51F is accurately positioned at the bevel processing position (corresponding to an example of the "substrate processing position" of the present invention), as shown in FIG. be done.
  • the above information corresponds to the coupling rinsing processing position, as shown in FIG. 11B, the rinsing liquid discharge nozzle 201 is accurately positioned at the coupling rinsing position.
  • the discharge port 511 of the top surface processing nozzle 51F positioned at the bevel processing position is directed toward the peripheral edge of the top surface Wf of the substrate W. Then, in response to a supply command from the control unit 10, when the processing liquid supply section 52 supplies the processing liquid corresponding to the supply command among the three types of processing liquids to the upper surface processing nozzle 51F for the processing liquid, the upper surface processing nozzle 51F A processing liquid is supplied from the end surface of the substrate W to a preset position. Note that while the bevel process is being executed, the supply of the coupling liquid to the rinse liquid discharge nozzle 201 is stopped.
  • the discharge port 202 of the rinse liquid discharge nozzle 201 positioned at the coupling rinse position faces the inclined portion 333 of the upper cup 33.
  • This discharge port 202 is provided in the rinse liquid discharge nozzle 201 so that its diameter is larger than the diameter of the discharge port 511 of the upper surface processing nozzle 51F.
  • the coupling liquid supply unit 203 (FIG. 2) supplies a coupling liquid such as room temperature DIW (deionized water) to the rinse liquid discharge nozzle 201 in response to a supply command from the control unit 10, as shown in FIG. 11B. Then, the coupling liquid is supplied from the rinsing liquid discharge nozzle 201 to the inclined portion 333.
  • DIW room temperature DIW
  • the coupling rinse liquid discharge direction D33 is the rotation direction of the upper cup 33 with respect to the radial direction AR from the rotation axis AX toward the rinse liquid discharge nozzle 201 within a horizontal plane (XY plane). It is tilted at an angle ⁇ to the Dr. Therefore, it is possible to effectively prevent the rebound of the coupling rinse liquid that occurs when the coupling rinse liquid collides with the inclined portion 333 from returning to the rinse liquid discharge nozzle 201 .
  • the discharge of the processing liquid is also inclined at an angle ⁇ in the rotational direction Dr to the upper cup 33 with respect to the radial direction AR, but the angle ⁇ is arbitrary. For example, ⁇ may be set to zero. Further, while the coupling process is being performed, the supply of the processing liquid to the upper surface processing nozzle 51F is stopped.
  • the lower sealing cup member 61 of the atmosphere separation mechanism 6 is detachably fixed to some of the components of the nozzle moving section 54.
  • the upper surface processing nozzle 51F and the nozzle holder 53 are integrated with the lower sealing cup member 61 via the nozzle moving part 54, and together with the lower sealing cup member 61 by the lifting mechanism 7. It is raised and lowered in the vertical direction Z.
  • FIG. 12 is a perspective view showing a processing liquid discharge nozzle on the lower surface side and a nozzle support section that supports the nozzle, which are installed in the processing mechanism.
  • a lower surface processing nozzle 51B and a nozzle support part 57 are provided below the substrate W held by the spin chuck 21.
  • the nozzle support portion 57 has a thin cylindrical portion 571 extending in the vertical direction, and a flange portion 572 having an annular shape that is folded outward in the radial direction at the upper end of the cylindrical portion 571.
  • the cylindrical portion 571 has a shape that can be freely inserted into the air gap formed between the annular member 27a and the lower cup 32. As shown in FIG. 2, the nozzle support portion 57 is arranged so that the cylindrical portion 571 is loosely inserted into the air gap and the flange portion 572 is located between the substrate W held by the spin chuck 21 and the lower cup 32. is fixedly placed.
  • Three lower surface treatment nozzles 51B are attached to the upper peripheral edge of the flange portion 572. Each lower surface processing nozzle 51B has a discharge port (not shown) that opens toward the peripheral edge of the lower surface Wb of the substrate W, and discharges the processing liquid supplied from the processing liquid supply section 52 via the piping 58. It is possible.
  • Bevel processing is performed on the peripheral edge of the substrate W by the processing liquid discharged from the upper surface processing nozzle 51F and the lower surface processing nozzle 51B. Furthermore, on the lower surface side of the substrate W, a flange portion 572 is extended to the vicinity of the peripheral edge portion Ws. Therefore, the nitrogen gas supplied to the lower surface side via the pipe 28 flows into the collection space SPc along the flange portion 572. As a result, droplets are effectively prevented from flowing back to the substrate W from the collection space SPc.
  • the atmosphere separation mechanism 6 has a lower sealing cup member 61 and an upper sealing cup member 62. Both the lower sealing cup member 61 and the upper sealing cup member 62 have a cylindrical shape that is open upward and downward. The inner diameters of these parts are larger than the outer diameter of the rotary cup part 31, and the atmosphere separation mechanism 6 allows the spin chuck 21, the substrate W held by the spin chuck 21, the rotary cup part 31, and the upper surface protection heating mechanism 4 to be attached from above. More specifically, as shown in FIG. 2, the upper sealing cup member 62 is positioned directly below the punching plate 14 so that the upper opening covers the opening 11f1 of the ceiling wall 11f from below. Fixed location. Therefore, the downflow of clean air introduced into the chamber 11 is divided into one that passes through the inside of the upper sealing cup member 62 and one that passes outside the upper sealing cup member 62 .
  • the lower end portion of the upper sealing cup member 62 has a flange portion 621 having an annular shape that is folded inward.
  • An O-ring 63 is attached to the upper surface of this flange portion 621.
  • a lower hermetic cup member 61 is disposed inside the upper hermetic cup member 62 so as to be movable in the vertical direction.
  • the upper end portion of the lower sealing cup member 61 has a flange portion 611 that is folded outward and has an annular shape. This flange portion 611 overlaps with the flange portion 621 in plan view from vertically above. Therefore, when the lower sealing cup member 61 is lowered, the flange portion 611 of the lower sealing cup member 61 is connected to the flange portion 621 of the upper sealing cup member 62 via the O-ring 63, as shown in the partially enlarged view in FIG. It is locked. Thereby, the lower sealing cup member 61 is positioned at the lower limit position. At this lower limit position, the upper sealing cup member 62 and the lower sealing cup member 61 are connected in the vertical direction, and the downflow introduced into the inside of the upper sealing cup member 62 is guided toward the substrate W held by the spin chuck 21. be done.
  • the lower end portion of the lower sealing cup member 61 has a flange portion 612 that is folded outward and has an annular shape. This flange portion 612 overlaps with the upper end portion of the fixed cup portion 34 (the upper end portion of the liquid receiving portion 341) in a plan view from vertically above. Therefore, at the lower limit position, as shown in the partially enlarged view in FIG. 4, the flange portion 612 of the lower sealing cup member 61 is locked by the fixed cup portion 34 via the O-ring 64. Thereby, the lower sealed cup member 61 and the fixed cup part 34 are connected in the vertical direction, and the upper sealed cup member 62, the lower sealed cup member 61, and the fixed cup part 34 form a sealed space 12a.
  • Bevel processing on the substrate W can be performed within this sealed space 12a. That is, by positioning the lower sealed cup member 61 at the lower limit position, the sealed space 12a is separated from the outer space 12b of the sealed space 12a (atmosphere separation). Therefore, bevel processing can be stably performed without being affected by the outside atmosphere. Further, although a processing liquid is used to perform the bevel processing, it is possible to reliably prevent the processing liquid from leaking from the closed space 12a to the outer space 12b. Therefore, the degree of freedom in selecting and designing components to be placed in the outer space 12b is increased.
  • each protrusion 613 extends to the space below the upper annular portion 332 of the upper cup 33. Further, each protrusion 613 is attached so as to be spaced downward from the upper annular portion 332 of the upper cup 33 with the lower sealing cup member 61 positioned at the lower limit position. As the lower sealing cup member 61 rises, each protrusion 613 can engage with the upper annular portion 332 from below. Even after this engagement, the upper cup 33 can be separated from the lower cup 32 by further raising the lower sealing cup member 61.
  • the upper cup 33 also rises together.
  • the upper cup 33, the upper surface protection heating mechanism 4, and the nozzle head 56 are separated upward from the spin chuck 21.
  • a transfer space is created for the hand of the substrate transfer robot 111 to access the spin chuck 21 .
  • the loading of the substrate W onto the spin chuck 21 and the unloading of the substrate W from the spin chuck 21 can be performed through the transfer space. In this manner, in this embodiment, the substrate W can be accessed to the spin chuck 21 by raising the lower sealing cup member 61 with the minimum amount by the lifting mechanism 7.
  • the elevating mechanism 7 has two elevating drive parts 71 and 72.
  • a first elevating motor (not shown) is attached to a first elevating attachment portion 173 (FIG. 3) of the base member 17.
  • the first lifting motor operates in response to a drive command from the control unit 10 to generate rotational force.
  • Two lifting parts 712 and 713 are connected to this first lifting motor.
  • the elevating parts 712 and 713 simultaneously receive the rotational force from the first elevating motor.
  • the elevating section 712 moves the support member 491 that supports one end of the beam member 49 up and down in the vertical direction Z according to the amount of rotation of the first elevating motor.
  • the elevating section 713 moves the head support member 547 that supports the nozzle head 56 up and down in the vertical direction Z according to the amount of rotation of the first elevating motor.
  • a second elevating motor (not shown) is attached to a second elevating attachment portion 174 (FIG. 3) of the base member 17.
  • a lifting section 722 is connected to the second lifting motor.
  • the second elevating motor operates in response to a drive command from the control unit 10 to generate rotational force and applies it to the elevating section 722.
  • the elevating section 722 vertically moves the support member 492 that supports the other end of the beam member 49 according to the amount of rotation of the second elevating motor.
  • the elevating drive units 71 and 72 synchronously move support members 491, 492, and 54, which are respectively fixed at three different locations in the circumferential direction of the lower sealing cup member 61, in the vertical direction. Therefore, the upper surface protection heating mechanism 4, the nozzle head 56, and the lower sealing cup member 61 can be moved up and down stably. Further, as the lower sealing cup member 61 is raised and lowered, the upper cup 33 can also be raised and lowered stably.
  • the centering mechanism 8 executes the centering process while the suction by the pump 26 is stopped (that is, while the substrate W is horizontally movable on the upper surface of the spin chuck 21). This centering process eliminates the eccentricity of the substrate W with respect to the rotation axis AX, and the center of the substrate W coincides with the rotation axis AX.
  • the centering mechanism 8 is a single contact disposed on the conveyance opening 11b1 side with respect to the rotation axis AX in a contact movement direction D2 inclined by about 40 degrees with respect to the first virtual horizontal line VL1.
  • the single contact portion 81 has a shape extending parallel to the contact movement direction D2, and is finished so that its tip on the spin chuck 21 side can come into contact with the end surface of the substrate W on the spin chuck 21.
  • the multi-contact part 82 has a substantially Y-shape in a plan view from vertically above, and can come into contact with the end surface of the substrate W on the spin chuck 21 at each tip of the bifurcated part on the spin chuck 21 side. It is finished.
  • These single contact portions 81 and multiple contact portions 82 are movable in the contact movement direction D2.
  • the centering drive section 83 includes a single moving section 831 for moving the single contact section 81 in the contact movement direction D2, a multi movement section 832 for moving the multi contact section 82 in the contact movement direction D2, have.
  • Single-movement portion 831 is attached to single-movement attachment portion 175 (FIG. 3) of base member 17
  • multi-movement portion 832 is attached to multi-movement attachment portion 176 (FIG. 3) of base member 17.
  • the centering drive section 83 positions the single contact section 81 and the multi-contact section 82 apart from the spin chuck 21, as shown in FIG. Therefore, the single contact section 81 and the multi-contact section 82 are separated from the transport path TP to prevent the single contact section 81 and the multi-contact section 82 from interfering with the substrate W being carried in and out of the chamber 11. It can be effectively prevented.
  • the single moving section 831 moves the single contact section 81 toward the rotation axis AX in response to a centering command from the control unit 10, and the multi-moving section 832 moves the single contact section 81 toward the rotation axis AX. moves the multi-contact portion 82 toward the rotation axis AX.
  • the center of the substrate W coincides with the rotation axis AX.
  • the substrate observation mechanism 9 includes a light source section 91, an imaging section 92, an observation head 93, and an observation head drive section 94.
  • the light source section 91 and the imaging section 92 are arranged side by side at the optical component attachment position 177 (FIG. 3) of the base member 17.
  • the light source section 91 emits illumination light toward the observation position in response to an illumination command from the control unit 10.
  • This observation position is a position corresponding to the peripheral edge Ws of the substrate W, and corresponds to a position where the observation head 93 is positioned (not shown).
  • the observation head 93 is capable of reciprocating movement between the observation position and a remote position radially outward of the substrate W from the observation position.
  • An observation head drive unit 94 is connected to the observation head 93 .
  • the observation head drive unit 94 is attached to the base member 17 at a head drive position 178 (FIG. 3) on the base member 17. Then, in response to a head movement command from the control unit 10, the observation head drive section 94 reciprocates the observation head 93 in a head movement direction D3 inclined at about 10 degrees with respect to the first virtual horizontal line VL1. More specifically, while the observation process of the substrate W is not being performed, the observation head drive unit 94 moves and positions the observation head 93 to the retreat position.
  • the observation head 93 is separated from the transport path TP, and it is possible to effectively prevent the observation head 93 from interfering with the substrate W being carried in and out of the chamber 11.
  • the observation head drive section 94 moves the observation head 93 to the observation position in response to a substrate observation command from the control unit 10.
  • the observation head 93 configured as described above is positioned at the observation position and the light source section 91 is turned on in response to an illumination command from the control unit 10 in the positioned state, the illumination area of the observation head 93 is irradiated with illumination light. As a result, the peripheral edge portion Ws of the substrate W and its adjacent area are illuminated by the diffused illumination light from the observation head 93. Further, the reflected light reflected from the peripheral portion Ws and its adjacent region is guided to the imaging section 92 via the observation head 93.
  • the imaging unit 92 includes an observation lens system composed of an object-side telecentric lens and a CMOS camera. Therefore, of the reflected light guided from the observation head 93, only the light rays parallel to the optical axis of the observation lens system are incident on the sensor surface of the CMOS camera, and the image of the peripheral portion Ws of the substrate W and the adjacent area is displayed on the sensor surface. is imaged. In this way, the imaging unit 92 images the peripheral portion Ws of the substrate W and the adjacent area, and obtains a top surface image, a side surface image, and a bottom surface image of the substrate W. The imaging section 92 then transmits image data representing the image to the control unit 10.
  • the control unit 10 includes an arithmetic processing section 10A, a storage section 10B, a reading section 10C, an image processing section 10D, a drive control section 10E, a communication section 10F, and an exhaust control section 10G.
  • the storage unit 10B is composed of a hard disk drive, etc., and stores a program for executing bevel processing by the substrate processing apparatus 1.
  • the program is stored, for example, in a computer-readable recording medium RM (for example, an optical disk, a magnetic disk, a magneto-optical disk, etc.), is read from the recording medium RM by the reading section 10C, and is stored in the storage section 10B. .
  • a computer-readable recording medium RM for example, an optical disk, a magnetic disk, a magneto-optical disk, etc.
  • the image processing unit 10D performs various processes on the image captured by the board observation mechanism 9.
  • the drive control section 10E controls each drive section of the substrate processing apparatus 1.
  • the communication unit 10F communicates with a control unit that integrates and controls each unit of the substrate processing system 100.
  • the exhaust control section 10G controls the exhaust section 38.
  • a display section 10H (for example, a display) that displays various information
  • an input section 10J (for example, a keyboard, a mouse, etc.) that receives input from an operator are connected to the control unit 10.
  • the substrate processing apparatus 1 is configured of a computer having an access memory (Access Memory), etc., and controls each part of the substrate processing apparatus 1 as described below according to a program stored in the storage section 10B to execute bevel processing. Bevel processing and coupling processing by the substrate processing apparatus 1 will be described below with reference to FIG. 13.
  • FIG. 13 is a flowchart showing bevel processing performed as an example of substrate processing operation by the substrate processing apparatus shown in FIG. 2.
  • the arithmetic processing section 10A uses the lifting drive sections 71 and 72 to move the lower sealing cup member 61, the nozzle head 56, the beam member 49, the support member 43, and the disk section. 42 will be raised integrally.
  • the projection 613 engages with the upper annular portion 332 of the upper cup 33, and from then on, the lower sealing cup member 61, the nozzle head 56, the beam member 49, the support member 43 and The upper cup 33 rises together with the disk portion 42 and is positioned at the retracted position.
  • the arithmetic processing unit 10A causes the centering drive unit 83 to move the single moving unit 831 and the multi-contact unit 82 to a retracted position away from the spin chuck 21, and causes the observation head drive unit 94 to move the observation head 93 to the spin chuck 21. Move it to a standby position away from the As a result, as shown in FIG. 4, among the components arranged around the spin chuck 21, the nozzle head 56, the light source section 91, the imaging section 92, the motor 23, and the multi-contact section 82 are aligned with the first virtual horizontal line VL1.
  • the single moving unit 831 and the observation head 93 are located closer to the transport opening 11b1 than the first virtual horizontal line VL1, but are out of the movement area of the substrate W along the transport path TP.
  • such a layout structure is adopted, so that interference between the components arranged around the spin chuck 21 and the substrate W can be effectively prevented when the substrate W is loaded into or taken out from the chamber 11. can do.
  • the arithmetic processing unit 10A After confirming the completion of the formation of the transfer space and the prevention of interference with the substrate W, the arithmetic processing unit 10A requests the substrate transfer robot 111 to load the substrate W via the communication unit 10F, and performs the transfer shown in FIG.
  • An unprocessed substrate W is carried into the substrate processing apparatus 1 along the path TP and waits for it to be placed on the upper surface of the spin chuck 21. Then, the substrate W is placed on the spin chuck 21 (step S1). Note that at this point, the pump 26 is stopped, and the substrate W can be horizontally moved on the upper surface of the spin chuck 21.
  • the substrate transfer robot 111 retreats from the substrate processing apparatus 1 along the transfer path TP. Subsequently, the arithmetic processing unit 10A controls the centering drive unit 83 so that the single moving unit 831 and the multi-contact unit 82 come close to the substrate W on the spin chuck 21. As a result, the eccentricity of the substrate W with respect to the spin chuck 21 is eliminated, and the center of the substrate W coincides with the center of the spin chuck 21 (step S2).
  • the arithmetic processing unit 10A controls the centering drive unit 83 so that the single moving unit 831 and the multi-contact unit 82 are separated from the substrate W, and also operates the pump 26 to spin the negative pressure. It is applied to the chuck 21. Thereby, the spin chuck 21 attracts and holds the substrate W from below.
  • the arithmetic processing unit 10A gives a descending command to the elevation drive units 71 and 72.
  • the elevating drive units 71 and 72 lower the lower sealing cup member 61, the nozzle head 56, the beam member 49, the support member 43, and the disc part 42 integrally.
  • the upper cup 33 supported from below by the projection 613 of the lower sealing cup member 61 is connected to the lower cup 32.
  • the lower sealing cup member 61, nozzle head 56, beam member 49, support member 43, and disk portion 42 are further lowered together, and the flange portions 611, 612 of the lower sealing cup member 61 are removed. They are locked by the flange portion 621 and fixed cup portion 34 of the upper sealing cup member 62, respectively. Thereby, the lower sealing cup member 61 is positioned at the lower limit position (the position shown in FIG. 2) (step S3).
  • step S3 After the above-mentioned locking, as shown in the partially enlarged view of FIG.
  • the flange portion 612 of the lower sealing cup member 61 and the fixed cup portion 34 are brought into close contact with each other via the O-ring 63. As a result, as shown in FIG.
  • the lower sealed cup member 61 and the fixed cup part 34 are connected in the vertical direction, and a sealed space 12a is formed by the upper sealed cup member 62, the lower sealed cup member 61, and the fixed cup part 34,
  • the closed space 12a is separated from the outside atmosphere (outside space 12b) (atmosphere separation).
  • the lower surface of the disk portion 42 covers the surface area of the upper surface Wf of the substrate W except for the peripheral edge portion Ws from above. Further, the upper surface processing nozzle 51F is positioned within the notch 44 of the disk portion 42 in such a manner that the discharge port 511 is directed toward the peripheral edge of the upper surface Wf of the substrate W.
  • the processing unit 10A gives a rotation command to the motor 23, and starts rotating the spin chuck 21 and the rotating cup unit 31 that hold the substrate W (step S4). .
  • the rotational speed of the substrate W and the rotating cup section 31 is set to, for example, 1800 revolutions/minute.
  • the arithmetic processing unit 10A controls the heater drive unit 422 to raise the temperature of the heater 421 to a desired temperature, for example, 185°C.
  • the arithmetic processing unit 10A gives a heating gas supply command to the heating gas supply unit 47.
  • the nitrogen gas heated by the heater 471 that is, the heated gas
  • the heated gas is force-fed from the heated gas supply section 47 toward the central nozzle 45 (step S5).
  • This heated gas is heated by the ribbon heater 48 while passing through the pipe 46 .
  • the heated gas is discharged from the central nozzle 45 toward the space SPa (FIG. 8) sandwiched between the substrate W and the disk portion 42 while preventing a temperature drop during gas supply via the pipe 46.
  • Ru As a result, the entire upper surface Wf of the substrate W is heated. Further, the substrate W is also heated by the heater 421.
  • the temperature of the peripheral edge portion Ws of the substrate W increases and reaches a temperature suitable for bevel processing, for example, 90° C. Furthermore, the temperatures of the parts other than the peripheral part Ws also rise to approximately the same temperature. That is, in this embodiment, the in-plane temperature of the upper surface Wf of the substrate W is substantially uniform. Therefore, warping of the substrate W can be effectively suppressed.
  • the arithmetic processing unit 10A controls the processing liquid supply unit 52 to supply the processing liquid to the upper surface processing nozzle 51F and the lower surface processing nozzle 51B. That is, a liquid flow of the processing liquid is ejected from the upper surface processing nozzle 51F so as to hit the upper surface periphery of the substrate W, and a liquid flow of the processing liquid is ejected from the lower surface processing nozzle 51B so as to hit the lower surface periphery of the substrate W. .
  • bevel processing is performed on the peripheral edge portion Ws of the substrate W (step S6).
  • the arithmetic processing section 10A detects the elapse of the processing time required for the bevel processing of the substrate W, it gives a supply stop command to the processing liquid supply section 52 to stop discharging the processing liquid.
  • the arithmetic processing unit 10A gives a supply stop command to the heated gas supply unit 47, and stops the supply of nitrogen gas from the heated gas supply unit 47 to the central nozzle 45 (step S7). Further, the arithmetic processing unit 10A gives a rotation stop command to the motor 23 to stop the rotation of the spin chuck 21 and the rotary cup part 31 (step S8).
  • the arithmetic processing unit 10A observes the peripheral edge Ws of the substrate W and inspects the result of the bevel process. More specifically, the arithmetic processing unit 10A positions the upper cup 33 at the retracted position in the same manner as when loading the substrate W, thereby forming a transport space. Then, the arithmetic processing unit 10A controls the observation head drive unit 94 to bring the observation head 93 close to the substrate W. Then, the arithmetic processing unit 10A illuminates the peripheral portion Ws of the substrate W via the observation head 93 by turning on the light source unit 91.
  • the imaging section 92 receives the reflected light reflected by the peripheral edge part Ws and the adjacent area, and images the peripheral edge part Ws and the adjacent area. That is, a peripheral edge image of the peripheral edge Ws along the rotational direction of the substrate W is acquired from a plurality of images of the peripheral edge Ws acquired by the imaging unit 92 while the substrate W is rotating around the rotation axis AX. Then, the arithmetic processing unit 10A controls the observation head drive unit 94 to retract the observation head 93 from the substrate W. In parallel with this, the arithmetic processing unit 10A inspects whether the bevel processing has been performed satisfactorily based on the captured image of the peripheral area Ws and the adjacent area, that is, the peripheral area image. . In this embodiment, as an example of the inspection, the processing width processed by the processing liquid from the end surface of the substrate W toward the center of the substrate W is inspected from the peripheral image (post-processing inspection).
  • the arithmetic processing unit 10A requests the substrate transfer robot 111 to unload the substrate W via the communication unit 10F, and the processed substrate W is carried out from the substrate processing apparatus 1 (step S10). Subsequently, the arithmetic processing unit 10A determines whether the timing to perform the coupling rinse process on the rotary cup unit 31 has arrived (step S11).
  • the above-mentioned timing corresponds to, for example, the replacement of the rotary cup portion 31 or the cumulative number of times or cumulative time of bevel processing since the previous maintenance has reached a predetermined value. This also includes the timing at which a coupling request is made from the operator.
  • step S11 If the arithmetic processing unit 10A determines that the coupling rinsing process is unnecessary (“NO” in step S11), it ends the series of processes without performing the coupling rinsing process. On the other hand, when the arithmetic processing unit 10A determines that coupling rinsing processing is necessary ("YES” in step S11), it executes coupling rinsing processing (step S12).
  • the lower sealing cup member 61, nozzle head 56, beam member 49, support member 43, and disk portion 42 are further lowered together, and the flange portions 611, 612 of the lower sealing cup member 61 are removed. They are locked by the flange portion 621 and fixed cup portion 34 of the upper sealing cup member 62, respectively. As a result, the lower sealing cup member 61 is positioned at the lower limit position (the position shown in FIG. 2) (step S12a).
  • the lower surface of the disk portion 42 covers the surface area of the upper surface Wf of the substrate W except for the peripheral portion Ws from above.
  • the arithmetic processing unit 10A gives a drive command to the nozzle drive motor 543.
  • the slider 544, head support member 547, and nozzle head 56 move integrally by a distance corresponding to the amount of rotation included in this drive command.
  • the rinse liquid discharge nozzle 201 is placed in a coupling rinse position suitable for coupling treatment (as shown in FIG. (step S12b).
  • the processing section 10A gives a rotation command to the motor 23, and starts rotating the spin chuck 21 holding the substrate W and the rotating cup section 31 ( Step S12c).
  • the rotational speeds of the substrate W and the rotary cup portion 31 are set to be lower than the rotational speed during the bevel treatment, for example, 100 to 500 revolutions/minute.
  • the arithmetic processing unit 10A controls the coupling liquid supply unit 203 to supply the coupling liquid to the rinse liquid discharge nozzle 201.
  • the coupling rinse liquid is discharged from the rinse liquid discharge nozzle 201 to a part of the inclined portion 333 of the upper cup 33, more specifically, to the coupling position Zcr in the vertical direction Z, as shown in FIG. 11B.
  • the coupling liquid flows down along the inclined surface 334 of the inclined portion 333, and the coupling processing is executed (step S12d).
  • the arithmetic processing unit 10A detects the elapse of the processing time required for the coupling process of the rotary cup unit 31, it gives a supply stop command to the coupling liquid supply unit 203 to stop discharging the coupling liquid.
  • step S12e the arithmetic processing unit 10A gives a rotation stop command to the motor 23 to stop the rotation of the rotary cup part 31. Then, the coupling rinsing process is completed, and the series of processes is also completed. Note that these series of steps (steps S1 to S12) are repeatedly executed.
  • the coupling liquid is directly supplied from the rotation axis AX side to the rotary cup portion 31 rotating around the rotation axis AX, thereby executing the coupling rinse process. Therefore, it is possible to keep the rotary cup portion 31 clean and effectively prevent the generation of particles caused by droplets of the processing liquid adhering to the rotary cup portion 31.
  • the rotary cup part 31 made of resin material may be deformed, but if the coupling rinse process is performed at an appropriate timing, Deformation of the rotating cup portion 31 is suppressed. In other words, the life of the rotary cup portion 31 can be extended. As a result, rung cost can be suppressed.
  • the amount of coupling liquid used to achieve these effects is smaller than that of the substrate processing apparatus described in Patent Document 1, and the environmental load can be reduced.
  • the processing liquid is collected on the inclined surface 334 of the inclined portion 333 of the upper cup 33.
  • the centrifugal force generated as the cup rotates acts on the droplets attached to the inclined surface 334 of the inclined portion 333 of the rotating cup portion 31.
  • it is affected by an air flow formed by nitrogen gas or the like that is supplied during the bevel process and flows radially outward along the upper surface Wf and lower surface Wb of the substrate W.
  • a downward vector stress along the inclined surface 334 of the inclined portion 333 acts on the droplet.
  • the coupling liquid is supplied to the inclined portion 333 and flows downward along the inclined portion 333. Therefore, the processing liquid can be efficiently removed from the rotary cup portion 31.
  • the position where the coupling rinse liquid lands on the inclined portion 333 is lower than the height position Zw where droplets of the processing liquid scattered from the rotating substrate W are collected. It is set high. Therefore, all the droplets of the processing liquid collected on the inclined portion 333 can be rinsed and removed by the coupling liquid flowing down along the inclined surface 334 of the inclined portion 333, and an excellent coupling effect can be obtained.
  • the coupling rinsing process is performed in a state in which the disk portion 42 of the upper surface protection heating mechanism 4 is close to the inclined portion 333 of the upper cup 33. Therefore, a portion of the coupling liquid that has landed on the inclined portion 333 may bounce back.
  • the coupling position Zcr is set lower than the position of the upper surface of the disk portion 42 of the upper surface protection heating mechanism 4, that is, the height position Z42. Therefore, it is possible to effectively prevent droplets of the coupling rinse liquid that have bounced back at the coupling position Zcr from adhering to the upper surface of the disk portion 42 .
  • the substrate W is heated by heat radiation from the upper surface protection heating mechanism 4, but the coupling rinse liquid at room temperature is supplied to the upper cup 33, thereby lowering the temperature of the upper cup 33.
  • the heat resistance of the upper cup 33 can be improved and deformation of the upper cup 33 can be suppressed.
  • the diameter of the discharge port 202 is larger than the diameter of the discharge port 511 of the upper surface processing nozzle 51F, the following effects can be obtained.
  • the discharge speed of the coupling rinse liquid is set to be lower than the discharge speed of the processing liquid.
  • the diameter of the discharge port 202 is set relatively large. Therefore, even though the discharge speed of the coupling rinse liquid is suppressed, the amount of the coupling rinse liquid supplied to the coupling rinse position Zcr per unit time can be increased. In other words, it is possible to supply sufficient coupling liquid for the coupling process while suppressing the rebound of the coupling liquid at the coupling position Zcr. As a result, the coupling rinse process can be performed satisfactorily while suppressing the adverse effects caused by the rebound of the coupling rinse liquid.
  • the coupling rinse liquid that has rebounded at the coupling rinse position Zcr as described above It is possible to effectively prevent the droplets from returning to and adhering to the rinse liquid discharge nozzle 201.
  • the coupling process using the rinse liquid discharge nozzle 201 can be performed continuously, the frequency of maintenance of the rinse liquid discharge nozzle 201 and the rotary cup part 31 can be reduced, and the operating efficiency of the apparatus can be increased.
  • the rinse liquid discharge nozzle 201 is held together with the upper surface treatment nozzle 51F by a nozzle holder 53, and a nozzle head 56 is configured. Then, the nozzle head 56 is moved to the coupling position (see FIG. 11B) by the nozzle moving unit 54.
  • the rinse liquid discharge nozzle 201 is positioned with high precision at a position suitable for the coupling process. Therefore, the coupling rinsing liquid can be supplied to a desired position of the upper cup 33, and the coupling rinsing process can be performed satisfactorily.
  • control unit 10 corresponds to an example of the "control unit” of the present invention.
  • the coupling rinse position Zcr corresponds to an example of the “discharge destination of the coupling rinse liquid” of the present invention.
  • the height position Zw corresponds to an example of the "height position of the upper surface of the substrate” of the present invention.
  • the rinse liquid discharge nozzle 201 corresponds to an example of the "top rinse nozzle” of the present invention.
  • the inclined surface 334 corresponds to an example of the "inner circumferential surface of the rotating cup portion" of the present invention.
  • the coupling liquid is discharged toward the coupling position Zcr of the inclined surface 334 from above the substrate holding height at which the substrate W is held by the spin chuck 21 in the vertical direction Z.
  • the coupling liquid may be discharged toward the coupling position Zcr so as to be discharged from below the substrate holding height toward the inclined surface 334 (second embodiment).
  • FIG. 14 is a schematic diagram showing the configuration and operation of the second embodiment of the substrate processing apparatus according to the present invention.
  • This second embodiment is largely different from the first embodiment in that a rinse liquid discharge nozzle 204 is provided on the upper surface (flange portion 572) of the nozzle support portion 57 that supports the lower surface processing nozzle 51B.
  • This rinse liquid discharge nozzle 204 is fixed to the nozzle support portion 57 with the discharge port 205 for discharging the coupling rinse liquid directed toward the coupling rinse position Zcr.
  • Note that other configurations and operations are the same as those in the first embodiment, so the same reference numerals are given and explanations are omitted.
  • step S12d when the arithmetic processing unit 10A controls the coupling liquid supply unit 203 to also supply the coupling rinse liquid to the rinse liquid discharge nozzle 204, the coupling rinse position Zcr
  • the coupling rinsing liquid from the rinsing liquid discharge nozzles 201 and 204 is simultaneously supplied to the rinsing liquid. Therefore, the coupling liquid is supplied to the inclined portion 333 of the upper cup 33 from both diagonally above and diagonally below. As a result, better coupling performance than the first embodiment can be obtained.
  • the rinse liquid discharge nozzle 204 corresponds to an example of the "lower surface rinse nozzle" of the present invention.
  • the first embodiment has the upper rinse nozzle 201
  • the second embodiment has the upper rinse nozzle 201 and the lower rinse nozzle 204, but only the lower rinse nozzle 204.
  • the rinse liquid discharge nozzle 204 can be easily adjusted by fixing the rinse liquid discharge nozzle 204 to the nozzle support portion 57 with the discharge port 205 facing the coupling position Zcr. Moreover, since the fixedly arranged rinse liquid discharge nozzle 204 is used, the step of positioning the rinse liquid discharge nozzle 201 to the coupling position (step S12b) in the first embodiment and the second embodiment is unnecessary. As a result, processing time can be reduced.
  • both the spin chuck 21 and the rotary cup part 31 are rotationally driven by the motor 23, but the spin chuck 21 and the rotary cup part 31 may be driven by different motors.
  • the present invention can also be applied to such a substrate processing apparatus.
  • this substrate processing apparatus in the coupling rinsing process, the coupling liquid can be supplied while only the rotary cup portion 31 is being rotated. As a result, power consumption during coupling and rinsing processing can be reduced, and environmental load can be reduced.
  • the present invention is applied to a substrate processing apparatus having a raised floor structure in which the substrate processing section SP is installed on the upper surface of the base member 17. Further, in the embodiment described above, the present invention is applied to a substrate processing apparatus having the rotating cup section 31. Further, in the embodiment described above, the present invention is applied to a substrate processing apparatus having an upper surface protection heating mechanism 4, an atmosphere separation mechanism 6, a centering mechanism 8, and a substrate observation mechanism 9.
  • a substrate processing apparatus that does not have these configurations that is, a processing liquid is supplied to the peripheral edge of the substrate W in the internal space 12 of the chamber 11 to process the peripheral edge.
  • the present invention can be applied to substrate processing apparatuses that perform
  • the present invention is applied to a substrate processing apparatus that performs bevel processing as an example of "substrate processing," but substrate processing that performs substrate processing on a substrate by supplying processing liquid to a rotating substrate
  • the present invention can be applied to devices in general.
  • the present invention can be applied to general substrate processing in which a substrate is processed with a processing liquid.
  • Substrate processing equipment substrate processing unit 2A...Substrate holding part 2B...Rotating mechanism 3...Scatter prevention mechanism 4...Top surface protection heating mechanism 5...Processing mechanism 10
  • Rinse liquid discharge nozzle 205 ...Discharge port (of the lower surface rinse liquid discharge nozzle) 333...Slanted portion (of the upper cup) 334...Slanted surface AR...Radial direction AX...Rotation axis D33...Discharge direction Dr...Rotation direction Ws...( Periphery (of the board) Z...Vertical direction Zcr...Coupling position Zw...Height position (of the top surface of the board)

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

La présente invention se rapporte à une technologie de traitement de substrat pour effectuer un traitement de substrat prédéfini sur un substrat en fournissant un liquide de traitement au substrat maintenu par une unité de maintien de substrat rotatif, et en collectant des gouttelettes du liquide de traitement sortant du substrat pendant le traitement de substrat. Dans ce dispositif, un liquide de rinçage de coupelle est fourni directement à une partie de coupelle rotative à partir d'une partie interne de la partie de coupelle rotative tandis que la partie de coupelle rotative tourne autour de l'axe de rotation. Par conséquent, le liquide de traitement est retiré de la partie de coupelle rotative tandis que la quantité d'utilisation du liquide de rinçage de coupelle est réduite, moyennant quoi la partie de coupelle rotative peut être gardée propre.
PCT/JP2023/026933 2022-08-29 2023-07-24 Dispositif de traitement de substrat et procédé de traitement de substrat WO2024048122A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022135572A JP2024032110A (ja) 2022-08-29 2022-08-29 基板処理装置および基板処理方法
JP2022-135572 2022-08-29

Publications (1)

Publication Number Publication Date
WO2024048122A1 true WO2024048122A1 (fr) 2024-03-07

Family

ID=90099567

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/026933 WO2024048122A1 (fr) 2022-08-29 2023-07-24 Dispositif de traitement de substrat et procédé de traitement de substrat

Country Status (2)

Country Link
JP (1) JP2024032110A (fr)
WO (1) WO2024048122A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08255789A (ja) * 1995-03-15 1996-10-01 Tokyo Electron Ltd 処理装置及び処理方法
JP2017162889A (ja) * 2016-03-08 2017-09-14 株式会社荏原製作所 基板洗浄装置、基板洗浄方法、基板処理装置および基板乾燥装置
JP2018147979A (ja) * 2017-03-03 2018-09-20 東京エレクトロン株式会社 基板処理装置
JP2021072415A (ja) * 2019-11-01 2021-05-06 東京エレクトロン株式会社 基板処理装置および基板処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08255789A (ja) * 1995-03-15 1996-10-01 Tokyo Electron Ltd 処理装置及び処理方法
JP2017162889A (ja) * 2016-03-08 2017-09-14 株式会社荏原製作所 基板洗浄装置、基板洗浄方法、基板処理装置および基板乾燥装置
JP2018147979A (ja) * 2017-03-03 2018-09-20 東京エレクトロン株式会社 基板処理装置
JP2021072415A (ja) * 2019-11-01 2021-05-06 東京エレクトロン株式会社 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
JP2024032110A (ja) 2024-03-12

Similar Documents

Publication Publication Date Title
KR20200009398A (ko) 기판 처리 방법 및 기판 처리 장치
WO2024048122A1 (fr) Dispositif de traitement de substrat et procédé de traitement de substrat
WO2024062760A1 (fr) Dispositif de traitement de substrat
KR102121241B1 (ko) 기판 처리 장치
JP2024045848A (ja) 基板処理装置および基板処理方法
WO2024042950A1 (fr) Dispositif de traitement de substrat
TW202414524A (zh) 基板處理裝置及基板處理方法
WO2024048121A1 (fr) Dispositif de traitement de substrat, procédé de traitement de substrat et système de traitement de substrat
JP2024031324A (ja) 基板処理装置
JP2023140682A (ja) 基板処理装置および基板処理方法
JP2024031325A (ja) 基板処理装置
TW202418510A (zh) 基板處理裝置
JP2024031323A (ja) 基板処理装置
TW202414561A (zh) 基板處理裝置
JP2023140683A (ja) 基板処理装置および基板処理方法
JP2023140684A (ja) 基板処理装置
JP2023140680A (ja) 基板処理装置および基板処理方法
TW202418511A (zh) 基板處理裝置
KR20230138419A (ko) 기판 처리 장치
TW202416368A (zh) 基板處理裝置、基板處理方法及基板處理系統
KR20220096195A (ko) 기판 처리 장치 및 방법
JP2024092239A (ja) 基板処理装置および基板処理方法
JP2024092238A (ja) 基板処理システムの給排気構造および給排気方法
KR20180062502A (ko) 기판 처리 장치
KR20180058464A (ko) 기판 처리 장치

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23859891

Country of ref document: EP

Kind code of ref document: A1