WO2024021895A1 - Solar cell and preparation method, and photovoltaic module - Google Patents

Solar cell and preparation method, and photovoltaic module Download PDF

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WO2024021895A1
WO2024021895A1 PCT/CN2023/098952 CN2023098952W WO2024021895A1 WO 2024021895 A1 WO2024021895 A1 WO 2024021895A1 CN 2023098952 W CN2023098952 W CN 2023098952W WO 2024021895 A1 WO2024021895 A1 WO 2024021895A1
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layer
silicon
passivation layer
silicon substrate
passivation
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French (fr)
Chinese (zh)
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曹玉甲
方亮
徐希翔
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隆基绿能科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • This application relates to the technical field of solar cells, in particular to solar cells and preparation methods, and photovoltaic modules.
  • the solar cells prepared by the existing solar cell preparation methods have poor passivation performance and anti-reflection effect, resulting in low photoelectric conversion efficiency of the solar cells.
  • High efficiency and low cost are the two most important directions for solar cell research.
  • crystalline silicon solar cells with the improvement of crystalline silicon manufacturing technology, the body carrier lifetime of the base silicon wafer continues to improve, and it is no longer a key factor restricting the improvement of cell efficiency.
  • the passivation of the battery surface has an increasingly obvious impact on the conversion efficiency.
  • Surface recombination refers to the recombination process that occurs on the surface of the silicon wafer.
  • the minority carrier lifetime in the silicon wafer is greatly affected by the surface state of the silicon wafer, because the surface of the silicon wafer has the following three characteristics: (1) From silicon The lattice structure extending to the surface in the crystal is interrupted on the surface, and dangling bonds appear on the surface atoms. The electrons of the silicon atoms arranged to the edge cannot form covalent bonds, so a surface energy level appears as a surface state. The surface state is close to the forbidden band.
  • the energy level in the center is an effective surface recombination center; (2) The cutting damage left on the surface of the silicon wafer during the slicing process causes many defects and lattice distortion, adding more recombination centers; (3) Silicon wafer surface adsorption Foreign impurities with positive and negative charges will also become recombination centers. Therefore, whether it is to improve the conversion efficiency of solar cells or reduce the production cost of solar cells, research on surface passivation technology of crystalline silicon solar cells is essential.
  • This application provides solar cells, preparation methods, and photovoltaic components, aiming to solve the problem of photoelectric conversion efficiency of solar cells caused by poor passivation performance and anti-reflection effect of solar cells prepared by existing solar cell preparation methods.
  • a first aspect of this application provides a method for preparing a solar cell, including:
  • a first passivation layer is formed on one side of the silicon substrate; the material of the first passivation layer is selected from: aluminum oxide and/or silicon oxide;
  • a first antireflection layer is formed on a side of the first passivation layer away from the silicon substrate.
  • the material of the first antireflection layer is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. ; Wherein, the first anti-reflection layer has experienced a temperature greater than or equal to 300°C.
  • the material of the first passivation layer is selected from aluminum oxide and/or silicon oxide.
  • the first passivation layer of the above materials has weak parasitic absorption of light and can achieve good chemical passivation and field Passivating effect. Moreover, the light transmittance of the first passivation layer of the above-mentioned material is significantly better than that of the amorphous silicon passivation layer, which can increase the short-circuit current of the solar cell.
  • the material of the first anti-reflection layer is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide.
  • the first anti-reflection layer made of the above materials has a good anti-reflection effect. Moreover, the material of the first passivation layer can withstand high temperatures.
  • the first anti-reflection layer has experienced temperatures greater than or equal to 300°C.
  • the formed first anti-reflection layer has good compactness and uniformity, further improving the anti-reflection effect. .
  • the formed first anti-reflection layer has good compactness and uniformity, so that the first anti-reflection layer has excellent corrosion resistance, and the first anti-reflection layer can play a good protective role on the first passivation layer.
  • the passivation effect of the first passivation layer is further enhanced.
  • the first antireflection layer has experienced a temperature greater than or equal to 300°C and can provide a certain hydrogen passivation effect, further enhancing the passivation effect of the first passivation layer.
  • forming a first antireflection layer on a side of the first passivation layer away from the silicon substrate includes:
  • the first antireflection layer is deposited on a side of the first passivation layer away from the silicon substrate.
  • the method further includes:
  • the silicon substrate on which the first passivation layer and the first anti-reflection layer are formed is annealed; the annealing temperature is greater than or equal to 300°C.
  • the annealing includes: hydrogen atmosphere annealing, and/or rapid heat treatment annealing.
  • forming a first passivation layer on one side of the silicon substrate includes:
  • a first passivation layer is atomically deposited.
  • the method further includes:
  • a protective layer is formed on the side of the first anti-reflection layer away from the first passivation layer to protect the first anti-reflection layer.
  • layer mask layer
  • An intrinsic amorphous silicon passivation layer is formed on the other side of the silicon substrate; wherein the other side of the silicon substrate and one side of the silicon substrate are relatively distributed;
  • a transparent conductive layer and a first electrode are formed on the P-type amorphous silicon layer, and a transparent conductive layer and a second electrode are formed on the N-type amorphous silicon layer.
  • the material of the mask layer is selected from silicon films.
  • a second aspect of the present application provides a solar cell prepared by any of the foregoing solar cell preparation methods.
  • a third aspect of this application provides a solar cell, including:
  • the material of the first passivation layer is selected from: aluminum oxide and/or silicon oxide;
  • the material of the first anti-reflection layer is selected from: at least one of silicon nitride, silicon oxynitride, and silicon oxide; the surface of the first anti-reflection layer away from the first passivation layer is at a concentration of 5%. Under the condition of hydrofluoric acid, the corrosion rate is: 0.1nm/s to 3nm/s.
  • the reflectance of the surface of the first antireflection layer away from the first passivation layer is less than or equal to 2%.
  • the silicon substrate is a P-type silicon substrate.
  • the first anti-reflection layer has a stacked structure; in the first anti-reflection layer, the refractive index of each layer of the stacked structure decreases in a direction away from the silicon substrate.
  • the material of the first passivation layer is only selected from: aluminum oxide, and the amount of negative charge carried by the first passivation layer is 1 ⁇ 10 11 to 1 ⁇ 10 13 .
  • the first antireflection layer includes: a first silicon nitride film, a second silicon nitride film, a third silicon nitride film, a first silicon oxynitride film, and a second silicon oxynitride film stacked in sequence. ; Wherein, the first silicon nitride film is disposed adjacent to the first passivation layer; in the first anti-reflection layer, the refractive index of each layer of film decreases along the direction away from the silicon substrate.
  • the thickness of the first passivation layer is 1 to 20 nm; the direction of the thickness is parallel to the stacking direction of the first passivation layer and the first anti-reflection layer;
  • the thickness of the first anti-reflection layer is 50 to 150 nm.
  • the solar cell further includes: an intrinsic amorphous silicon passivation layer located on the other side of the silicon substrate, and interdigitated P-type amorphous silicon distributed on the intrinsic amorphous silicon passivation layer. layer, an N-type amorphous silicon layer, a transparent conductive layer and a first electrode provided on the P-type amorphous silicon layer, and a transparent conductive layer and a second electrode provided on the N-type amorphous silicon layer;
  • the other side of the silicon substrate and one side of the silicon substrate are relatively distributed.
  • the lifetime of minority carriers in the solar cell is greater than or equal to 2 ms.
  • a fourth aspect of this application provides another solar cell, including:
  • the material of the first passivation layer is selected from: aluminum oxide and/or silicon oxide;
  • the material of the first anti-reflection layer is selected from: at least one of silicon nitride, silicon oxynitride, and silicon oxide; the first anti-reflection layer has a stacked structure; in the first anti-reflection layer, The refractive index of each layer of the stacked structure decreases in a direction away from the silicon substrate.
  • the silicon substrate is a P-type silicon substrate.
  • the material of the first passivation layer is only selected from: aluminum oxide, and the amount of negative charge carried by the first passivation layer is 1 ⁇ 10 11 to 1 ⁇ 10 13 .
  • a fifth aspect of the present application provides a photovoltaic module, including: at least one solar cell as described above.
  • Figure 1 shows a schematic structural diagram of a first solar cell in an embodiment of the present invention
  • Figure 2 shows a step flow chart of a method for preparing a solar cell in an embodiment of the present invention
  • Figure 3 shows a first partial structural schematic diagram of a solar cell in an embodiment of the present invention
  • Figure 4 shows a second partial structural schematic diagram of a solar cell in an embodiment of the present invention
  • Figure 5 shows a third partial structural schematic diagram of a solar cell in an embodiment of the present invention.
  • Figure 6 shows a fourth partial structural schematic diagram of a solar cell in an embodiment of the present invention.
  • FIG. 7 shows a fifth partial structural diagram of a solar cell in an embodiment of the present invention.
  • 1-Silicon substrate 11-texture structure of the silicon substrate, 2-first passivation layer, 3-first anti-reflection layer, 31-silicon nitride film, 32-silicon oxynitride film, 33-silicon oxide film, 4-Intrinsic amorphous silicon passivation layer, 5-N-type amorphous silicon layer, 6-P-type amorphous silicon layer, 7-Transparent conductive layer, 8-First electrode, 9-Second electrode.
  • a solar cell includes a silicon substrate 1 , and the doping type of the silicon substrate 1 is not specifically limited.
  • the silicon substrate 1 may be an N-type doped silicon substrate, or may be a P-type doped silicon substrate.
  • the silicon substrate 1 includes a light facing surface and a backlight surface, which are relatively distributed and include a heterojunction stacked structure on at least one side.
  • the light-facing surface of the silicon substrate 1 may be: the surface of the silicon substrate that mainly illuminates in solar cells or photovoltaic modules.
  • the type of the solar cell is not specifically limited.
  • HJT Hetero-Junction with Intrinsic Thin-layer, heterojunction
  • HBC Hetero-Junction back contact, heterojunction back contact
  • HBC hybrid solar cell etc.
  • FIG. 2 shows a flow chart of a method for manufacturing a solar cell in an embodiment of the present invention.
  • the preparation method of the solar cell includes the following steps:
  • Step 101 Form a first passivation layer on one side of the silicon substrate; the material of the first passivation layer is selected from: aluminum oxide and/or silicon oxide.
  • Figure 3 shows a first partial structural diagram of a solar cell in an embodiment of the present invention.
  • the silicon substrate 1 can also be cleaned and textured to form a textured structure 11 on the surface of the silicon substrate 1, and at the same time remove damage on the surface of the silicon substrate 1, such as gold characters. Suede structure of the tower.
  • the thickness of the silicon substrate 1 and the like are not specifically limited.
  • the thickness d2 of the silicon substrate 1 can be 100 to 200 ⁇ m (microns), the resistivity is 0.5 to 5 ⁇ cm (ohms ⁇ cm), and the body minority carrier lifetime of the silicon substrate 1 is greater than 300 ⁇ s (microseconds).
  • Figure 4 shows a second partial structural diagram of a solar cell in an embodiment of the present invention.
  • the first passivation layer 2 may be formed on one surface of the silicon substrate 1 after texturing.
  • the formation method of the first passivation layer 2 is not specifically limited.
  • the first passivation layer 2 may be formed by deposition.
  • the passivation layer in solar cells containing heterojunction structures is selected from amorphous silicon. Since the amorphous silicon in the passivation layer is not resistant to high temperatures, the anti-reflection layer immediately adjacent to the passivation layer is forced to be prepared using a low-temperature process. Some people have proposed using PECVD to deposit the anti-reflection layer.
  • the process temperature of PECVD is between 200-300°C, which basically matches the low-temperature process of amorphous silicon passivation layer.
  • the anti-reflection layer deposited in this way has poor corrosion resistance during the manufacturing process of heterojunction solar cells, causing serious damage to amorphous silicon and affecting the improvement of the conversion efficiency of solar cells.
  • the structure of this structure The manufacturing process of solar cells is complex, which increases the manufacturing cost of solar cells.
  • the inventor also found that the main reason for the poor anti-reflection effect in existing solar cells is that since the amorphous silicon in the passivation layer is not resistant to high temperatures, the anti-reflection layer immediately adjacent to the passivation layer needs to be prepared using a low-temperature process.
  • the anti-reflection layer prepared by low-temperature process has poor uniformity and is usually not dense enough, resulting in poor anti-reflection effect.
  • the inventor also found that the existing passivation layer materials are mostly selected from amorphous silicon. Amorphous silicon has relatively strong parasitic absorption of light, which greatly limits the short-circuit current of solar cells.
  • the material of the first passivation layer 2 is selected from aluminum oxide and/or silicon oxide.
  • the first passivation layer 2 of the above materials has weak parasitic absorption of light and can Achieve good chemical passivation and field passivation effects. Moreover, the light transmittance of the first passivation layer 2 of the above-mentioned material is significantly better than that of the amorphous silicon passivation layer, which can increase the short-circuit current of the solar cell.
  • the material of the first anti-reflection layer 3 is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. The first anti-reflection layer 3 of the above materials has a good anti-reflection effect. Moreover, the material of the first passivation layer 2 can withstand high temperatures and has good stability.
  • Step 102 Form a first anti-reflection layer on the side of the first passivation layer away from the silicon substrate.
  • the material of the first anti-reflection layer is selected from: silicon nitride, silicon oxynitride, and silicon oxide. At least one; wherein the first anti-reflection layer has experienced a temperature greater than or equal to 300°C.
  • Figure 5 shows a third partial structural schematic diagram of a solar cell in an embodiment of the present invention.
  • Figure 6 shows a fourth partial structural diagram of a solar cell in an embodiment of the present invention.
  • FIG. 7 shows a fifth partial structural diagram of a solar cell in an embodiment of the present invention.
  • a silicon nitride film 31, a silicon oxynitride film 32, and a silicon oxide film 33 are sequentially formed on the side of the first passivation layer 2 away from the silicon substrate 1 to form the first passivation layer 2.
  • Anti-layer 3 The material of the first antireflection layer 3 is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. Among them, the first anti-reflection layer 3 has experienced a temperature greater than or equal to 300°C.
  • the formation method of the first anti-reflection layer 3 is not specifically limited.
  • the first anti-reflection layer 3 may be formed by deposition.
  • the material of the first passivation layer 2 is selected from aluminum oxide and/or silicon oxide.
  • the first passivation layer 2 of the above materials has weak parasitic absorption of light and can achieve good Chemical passivation and field passivation effects. Moreover, the light transmittance of the first passivation layer 2 of the above-mentioned material is significantly better than that of the amorphous silicon passivation layer, which can increase the short-circuit current of the solar cell.
  • the material of the first anti-reflection layer 3 is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. The first anti-reflection layer 3 of the above materials has a good anti-reflection effect.
  • the material of the first passivation layer 2 can withstand high temperatures.
  • the first anti-reflection layer 3 has experienced temperatures greater than or equal to 300°C.
  • the formed first anti-reflection layer 3 has good compactness and uniformity, further improving the Anti-reflection effect.
  • the formed first anti-reflection layer 3 has good compactness and uniformity, so that the first anti-reflection layer 3 has excellent corrosion resistance, and the first anti-reflection layer 3 can play a good role in the first passivation layer 2
  • the protective effect further enhances the passivation effect of the first passivation layer 2.
  • the first antireflection layer 3 has experienced a temperature greater than or equal to 300° C., and can provide a certain hydrogen passivation effect, further enhancing the passivation effect of the first passivation layer 2 .
  • the above step 101 may include: atomic layer deposition (ALD) first passivation layer 2 on one side of the silicon substrate 1.
  • ALD atomic layer deposition
  • the first passivation layer 2 formed by ALD has good uniformity, and the process It has good stability, low process difficulty and is easy to mass produce.
  • PEALD plasma enhanced atomic layer deposition
  • the above step 102 may include: at a temperature greater than or equal to 300°C, at the A first antireflection layer 3 is deposited on a side of the passivation layer 2 away from the silicon substrate 1.
  • PECVD plasma enhanced chemical vapor deposition
  • the first anti-reflection layer 3 formed has good density and uniformity, further improving the anti-reflection effect.
  • the formed first anti-reflection layer 3 has good compactness and uniformity, so that the first anti-reflection layer 3 has excellent corrosion resistance, and the first anti-reflection layer 3 can play a good role in the first passivation layer 2
  • the protective effect further enhances the passivation effect of the first passivation layer 2.
  • Depositing the first antireflection layer 3 at a temperature greater than or equal to 300° C. can provide a certain hydrogen passivation effect and further enhance the passivation effect of the first passivation layer 2 .
  • the method may also include: annealing the silicon substrate 1 on which the first passivation layer 2 and the first antireflection layer 3 are formed, and the annealing temperature is greater than or equal to 300°C. Annealing can further improve the density and uniformity of the first anti-reflection layer 3 and further improve the anti-reflection effect.
  • the formed first anti-reflection layer 3 has good compactness and uniformity, so that the first anti-reflection layer 3 has excellent corrosion resistance, and the first anti-reflection layer 3 can play a good role in the first passivation layer 2
  • the protective effect further enhances the passivation effect of the first passivation layer 2.
  • the annealing process can provide a certain hydrogen passivation effect and further enhance the passivation effect of the first passivation layer 2 .
  • annealing includes: hydrogen atmosphere annealing (Forming Gas Anneal, FGA), and/or rapid thermal treatment annealing (Rapid temperature process, RTP).
  • FGA Forming Gas Anneal
  • RTP Rapid temperature process
  • the above two annealing processes are mature, easy to implement, and have good annealing effects.
  • the density and uniformity of the first anti-reflection layer 3 can be further improved, the anti-reflection effect can be further improved, and the corrosion resistance can be further improved.
  • the first anti-reflection layer 3 can act on the first passivation layer 2 It achieves a good protective effect and further enhances the passivation effect of the first passivation layer 2 .
  • the annealing process can provide a certain hydrogen passivation effect and further enhance the passivation effect of the first passivation layer 2 .
  • the annealing temperature of FGA is further preferred.
  • the maximum temperature of FGA can be 300 to 600°C
  • the annealing time can be 5 to 60 minutes
  • the annealing can be performed under vacuum conditions.
  • the specific annealing parameters of RTP are further preferred.
  • the maximum temperature of RTP can be 500 to 1000°C
  • the annealing time can be 10 to 150s.
  • the material of the first passivation layer 2 includes aluminum oxide (Al 2 O 3 ), in view of its good chemical passivation effect and field passivation effect, it itself has good passivation performance, and then it is passed on the aluminum oxide film. After covering the first anti-reflection layer 3 such as silicon nitride, the aluminum oxide passivation film can be protected while providing a considerable number of hydrogen atoms, further improving the passivation effect on the surface of the silicon substrate 1 .
  • Al 2 O 3 aluminum oxide
  • the aluminum oxide passivation film can be protected while providing a considerable number of hydrogen atoms, further improving the passivation effect on the surface of the silicon substrate 1 .
  • the hydrogen in the silicon nitride in the first anti-reflection layer 3 can further move to the surface of the silicon substrate 1 or even into the body of the silicon substrate 1 , thereby improving the passivation effect on the surface of the silicon substrate 1
  • defects in the silicon substrate 1 can also be well passivated. This can also be seen from the data on the effective minority carrier lifetime.
  • the effective minority carrier lifetime ranges from about 300 to 600us. After being covered with a silicon nitride film, the minority carrier lifetime can reach more than 1ms. Finally, after annealing, the silicon The effective minority carrier lifetime of substrate 1 can reach more than 2ms.
  • the material of the first passivation layer 2 includes aluminum oxide (Al 2 O 3 )
  • ALD such as PEALD is used to form the first passivation layer
  • a direct plasma discharge mode is used, that is, the silicon substrate directly serves as an electrode to participate in the discharge.
  • the electron speed is much higher than the ion speed
  • a plasma sheath is formed near the electrode, which increases the electric field in this area.
  • the frequency is low, the ions have reached the electrode before the direction of the electric field changes. Bombardment of the silicon substrate surface, and at the same time, through annealing treatment, the unstable Si-O bonds formed during the AlOx deposition process are destroyed.
  • the Al coordination in the tetrahedral structure at the Si-AlOx interface appears as a net negative charge.
  • the net negative charge bends the Si-AlOx interface energy band, and also prevents minority carriers from drifting to the back surface, resulting in excellent field passivation effect.
  • the method may further include: forming a mask layer to protect the first anti-reflection layer 3 on a side of the first anti-reflection layer 3 away from the first passivation layer 2.
  • the thickness of the mask layer is not specifically limited.
  • the thickness of the mask layer can be 5 to 50 nm. If the thickness of the mask layer is within this range, a better balance between masking effect and cost can be achieved.
  • An intrinsic amorphous silicon passivation layer 4 is then formed on the other side of the silicon substrate 1 . Wherein, the other side of the silicon substrate 1 is distributed opposite to the aforementioned one side of the silicon substrate 1 .
  • Interdigitally distributed P-type amorphous silicon layer 6 and N-type amorphous silicon layer 5 are formed on the intrinsic amorphous silicon passivation layer 4 .
  • a transparent conductive layer 7 and a first electrode 8 are formed on the P-type amorphous silicon layer 6
  • a transparent conductive layer 7 and a second electrode 9 are formed on the N-type amorphous silicon layer 5 .
  • the mask layer, intrinsic amorphous silicon passivation layer 4, P-type amorphous silicon layer 6, etc. can all be prepared by deposition, for example, they can all be prepared by PECVD. There are no specific limitations on the preparation methods of other layers or electrodes.
  • the silicon substrate 1 can be pickled on one side to clean away the silicon oxide that may naturally form on the other side of the silicon substrate 1 .
  • HF can be used for pickling, and after the pickling is completed, the other side of the silicon substrate 1 can be cleaned to ensure that the silicon substrate Cleanliness on the other side of bottom 1.
  • a whole layer of P-type amorphous silicon layer can be deposited on the intrinsic amorphous silicon passivation layer 4, and then on the whole layer of P-type amorphous silicon layer Deposit a silicon oxide protective layer, use laser to pattern the silicon oxide protective layer, or use wet chemistry to etch the patterned areas of the silicon oxide protective layer to achieve the entire layer of P-type amorphous silicon.
  • the P-type amorphous silicon layer can be amorphous silicon doped with boron.
  • the solar cell includes a silicon substrate 1, a first passivation layer 2 and a first anti-reflection layer 3 sequentially stacked on the light-facing side of the silicon substrate 1.
  • An intrinsic amorphous silicon passivation layer 4 is stacked on the backlight side of the silicon substrate 1 .
  • a P-type amorphous silicon layer 6 and an N-type amorphous silicon layer 5 are distributed interdigitally on the intrinsic amorphous silicon passivation layer 4 .
  • the adjacent P-type amorphous silicon layer 6 and N-type amorphous silicon layer 5 are insulated from each other.
  • the P-type amorphous silicon layer 6 and the N-type amorphous silicon layer 5 can be grooved by laser to insulate them.
  • the first passivation layer 2 and the first anti-reflection layer 3 on the light-facing side are prepared using a process of greater than or equal to 300°C, thereby forming a high-quality first passivation layer on the light-facing side.
  • the passivation layer, the excellent first anti-reflection layer, and the process and structural coupling of the two improve the corrosion resistance and stability of the first passivation layer 2, providing efficiency for solar cells containing heterojunction structures. contribute.
  • the first passivation layer 2 and the first anti-reflection layer 3 on the light side are prepared at high temperature and the heterojunction on the back is prepared at low temperature, which is effectively separated from the process, ensuring a two-stage process.
  • Their respective technical effects achieve zero grid line occlusion on the light surface of the solar cell and excellent passivation effect, thereby eliminating current loss caused by grid line occlusion and having high short-circuit current.
  • the first electrode 8 and the second electrode 9 are both located on the backlight surface of the solar cell.
  • the optimization of the first electrode and the second electrode can not be restricted by optical occlusion, which greatly reduces the effects of metallization of the first electrode and the second electrode.
  • the series resistance increases.
  • the material of the aforementioned mask layer is selected from silicon thin film, which is easy to prepare.
  • the material of the mask layer is selected from amorphous silicon films. It should be noted that this mask layer will be removed in subsequent processes.
  • the present invention also provides a solar cell, which is prepared by any of the aforementioned solar cell preparation methods.
  • the solar cell has the same or similar beneficial effects as the preparation method of the solar cell, which will not be described again in order to avoid repetition.
  • the present invention also provides a solar cell.
  • the solar cell includes a silicon substrate, and a first passivation layer 2 and a first anti-reflection layer 3 sequentially stacked on one side of the silicon substrate.
  • One side here may be the backlight surface of the silicon substrate 1 or the light-facing surface of the silicon substrate 1 .
  • the first passivation layer 2 and the first antireflection layer 3 are sequentially stacked on the light-facing surface of the silicon substrate 1 .
  • the material of the first passivation layer 2 is selected from aluminum oxide and/or silicon oxide.
  • the first passivation layer 2 of the above materials has weak parasitic absorption of light and can achieve good chemical properties. Passivation and field passivation effects. Moreover, the light transmittance of the first passivation layer 2 of the above-mentioned material is significantly better than that of the amorphous silicon passivation layer, which can increase the short-circuit current of the solar cell.
  • the material of the first anti-reflection layer 3 is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. The first anti-reflection layer 3 of the above materials has a good anti-reflection effect.
  • the material of the first passivation layer 2 can withstand high temperatures, and the preparation process of the first anti-reflection layer 3 does not need to be limited to a low-temperature process, thereby improving the density and uniformity of the first anti-reflection layer 3 and further improving the anti-reflection properties. Effect.
  • the first antireflection layer 3 is far away from the surface of the first passivation layer 2. Under the condition of 5% concentration of hydrofluoric acid, the corrosion rate is: 0.1nm/s (nanometer/second) to 3nm/s, that is, the first The first anti-reflection layer 3 has high density and excellent corrosion resistance.
  • the first anti-reflection layer 3 can play a good protective role on the first passivation layer 2 and further enhance the passivation of the first passivation layer 2 Effect.
  • the preparation process of the first antireflection layer 3 does not need to be limited to a low-temperature process, which can provide a certain hydrogen passivation effect and further enhance the passivation effect of the first passivation layer 2 .
  • the corrosion rate can be: 0.1nm/s, 0.7nm/s, 1.1nm/s, 1.9 nm/s, 2.3nm/s, 2.6nm/s, 3nm/s.
  • the reflectance of the surface of the first anti-reflection layer 3 far away from the first passivation layer 2 is less than or equal to 2%, and the reflectivity of the surface of the first anti-reflection layer 3 far away from the first passivation layer 2 is low.
  • Reduce optical parasitic absorption increase the short-circuit current of solar cells, and improve the photoelectric conversion efficiency of solar cells.
  • the reflectivity of the surface of the first antireflection layer 3 away from the first passivation layer 2 is: 2%, 1.9%, 1.7%, 1.4%, 1.1%, 0.9%, 0.7%.
  • the silicon substrate 1 is a P-type silicon substrate.
  • the P-type silicon substrate has a lower cost and can reduce the cost of the solar cell.
  • the material of the first passivation layer 2 is selected from aluminum oxide, the aluminum oxide as the passivation material usually has a negative fixed charge and has a negative fixed charge on the P-type silicon substrate. It has good passivation effect, especially good field passivation effect.
  • the material of the first passivation layer 2 is only selected from: aluminum oxide.
  • the amount of negative charge carried by the first passivation layer 2 is 1 ⁇ 10 11 to 1 ⁇ 10 13 .
  • the amount of negative charge carried by the aluminum oxide is within this range and has a good passivation effect, especially a good field passivation effect.
  • aluminum oxide as the first passivation layer 2 is easy to mass-produce, and the first passivation layer 2 formed has good uniformity, good process stability, and low process difficulty.
  • the aluminum oxide layer itself has good passivation performance due to its good chemical passivation effect and field passivation effect.
  • an anti-reflection layer such as silicon nitride, the aluminum oxide material can be protected.
  • the first passivation layer 2 provides a considerable number of hydrogen atoms to further improve the passivation effect on the surface of the silicon substrate 1 .
  • the material of the first passivation layer 2 is only selected from: aluminum oxide, and the amount of negative charge carried by the first passivation layer 2 is 1 ⁇ 10 11 , 5 ⁇ 10 11 , 9 ⁇ 10 11 , 1 ⁇ 10 12 , 2.5 ⁇ 10 12 , 6 ⁇ 10 12 , 9 ⁇ 10 12 , 1 ⁇ 10 13 .
  • the first anti-reflection layer 3 has a stacked structure.
  • the refractive index of each layer of the laminated structure decreases, and the refractive index matching of each layer of the laminated structure is good. The anti-reflection effect is even better.
  • the extent of the reduction in the refractive index of each layer of the stacked structure is not specifically limited.
  • the first antireflection layer 3 is composed of a silicon nitride film 31 and a silicon oxynitride film 32 .
  • the first antireflection layer 3 includes: a first silicon nitride film, a second silicon nitride film, a third silicon nitride film, a first silicon oxynitride film, and a second silicon oxynitride film stacked in sequence.
  • the first silicon nitride film is disposed closely adjacent to the first passivation layer 2 .
  • the refractive index of each layer of the film decreases, and the refractive index matching of each layer of the first anti-reflection layer 3 is good.
  • the first anti-reflection of the above structure The anti-reflection effect of layer 3 is even better.
  • the extent to which the refractive index of each film in the first anti-reflection layer 3 decreases in the direction away from the silicon substrate 1 is not specifically limited.
  • the thickness d1 of the first passivation layer 2 is 1 to 20 nm (nanometer), and the direction of the thickness is parallel to the stacking direction of the first passivation layer 2 and the first anti-reflection layer 3. , the thickness d1 of the first passivation layer 2 is within this range, and the passivation effect is better. It should be noted that the direction of thickness mentioned throughout this article is defined in this way.
  • the thickness d1 of the first passivation layer 2 is 1 nm, 3 nm, 6 nm, 7 nm, 11 nm, 15nm, 18nm, 20nm.
  • the thickness of the first anti-reflection layer 3 is 50 to 150 nm. If the thickness of the first anti-reflection layer 3 is within this range, the anti-reflection effect will be better.
  • the thickness of the first antireflection layer 3 is 50nm, 53nm, 60nm, 79nm, 91nm, 110nm, 130nm, and 150nm.
  • the solar cell also includes: an intrinsic amorphous silicon passivation layer 4 located on the other side of the silicon substrate 1, and interdigitated P-type passivation layers distributed on the intrinsic amorphous silicon passivation layer 4.
  • the other side of the silicon substrate 1 and one side of the silicon substrate 1 are relatively distributed. That is to say, the solar cell is a heterojunction solar cell.
  • the solar cell is a back contact heterojunction solar cell.
  • the first electrode 8 and the second electrode 9 are both arranged on the backlight surface of the solar cell. Reducing the occlusion of the light surface can increase the short-circuit current.
  • the solar cell shown in Figure 1 includes a silicon substrate 1, a first passivation layer 2 and a first antireflection layer 3 sequentially stacked on the light-facing surface of the silicon substrate 1.
  • An intrinsic amorphous silicon passivation layer 4 is stacked on the backlight side of the silicon substrate 1 .
  • a P-type amorphous silicon layer 6 and an N-type amorphous silicon layer 5 are distributed interdigitally on the intrinsic amorphous silicon passivation layer 4 .
  • the adjacent P-type amorphous silicon layer 6 and N-type amorphous silicon layer 5 are insulated from each other.
  • the P-type amorphous silicon layer 6 and the N-type amorphous silicon layer 5 can be grooved by laser to insulate them.
  • the first passivation layer and the first anti-reflection layer on the light-facing surface can be prepared using a process greater than or equal to 300°C, thereby forming a high-quality first passivation layer and excellent first anti-reflection layer on the light-facing surface.
  • the anti-layer improves the corrosion resistance and the stability of the first passivation layer, providing efficiency contribution to solar cells containing heterojunction structures.
  • the high-temperature preparation of the first passivation layer and the first anti-reflection layer on the light side and the low-temperature preparation of the back heterojunction are effectively separated from each other in terms of technology, ensuring the respective quality of the two processes.
  • Technical effect thereby achieving zero grid line occlusion and excellent passivation effect of solar cells on the light surface, thereby eliminating current loss caused by grid line occlusion and having high short-circuit current.
  • the first electrode and the second electrode are both located on the backlight surface of the solar cell.
  • the optimization of the first electrode and the second electrode can not be restricted by optical occlusion, greatly reducing the series connection caused by the metallization of the first electrode and the second electrode. Resistance increases.
  • the lifetime of minority carriers in the solar cell is greater than or equal to 2 ms, indicating that the solar cell has an excellent passivation effect and the defects in the silicon substrate 1 are well passivated.
  • the lifetimes of minority carriers in solar cells are 2ms, 2.1ms, 2.3ms, 2.4ms, 2.6ms, and 2.8ms.
  • the side of the silicon substrate 1 on which the first passivation layer 2 is provided may have a textured structure 11 to improve the light trapping effect.
  • the present invention also provides another solar cell.
  • the solar cell also includes: a silicon substrate 1, and a first passivation layer 2 and a first anti-reflection layer 3 sequentially stacked on one side of the silicon substrate 1.
  • the material of the first passivation layer 2 is selected from: aluminum oxide and/or silicon oxide.
  • the material of the first antireflection layer 3 is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide.
  • the first passivation layer 2 of the above material has weak parasitic absorption of light and can achieve good chemical passivation and field passivation effects.
  • the light transmittance of the first passivation layer 2 of the above-mentioned material is significantly better than that of the amorphous silicon passivation layer, which can increase the short-circuit current of the solar cell.
  • the material of the first anti-reflection layer 3 is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. The first anti-reflection layer 3 of the above materials has a good anti-reflection effect.
  • the material of the first passivation layer 2 can withstand high temperatures, and the preparation process of the first anti-reflection layer 3 does not need to be limited to a low-temperature process, thereby improving the density and uniformity of the first anti-reflection layer 3 and further improving the anti-reflection properties. Effect.
  • the preparation process of the first antireflection layer 3 does not need to be limited to a low-temperature process, which can provide a certain hydrogen passivation effect and further enhance the passivation effect of the first passivation layer 2 .
  • the first anti-reflection layer 3 has a laminated structure.
  • the refractive index of each layer of the stacked structure decreases, and the refractive index matching of each layer of the first anti-reflection layer 3 is good.
  • the anti-reflection effect of layer 3 is even better. It should be noted that, along the direction away from the silicon substrate 1, the extent of the reduction in the refractive index of each layer of the stacked structure is not specifically limited.
  • the silicon substrate 1 is a P-type silicon substrate.
  • the P-type silicon substrate has a lower cost and can reduce the cost of the solar cell.
  • the material of the first passivation layer 2 includes aluminum oxide, the Al coordination in the tetrahedral structure at the Si-AlOx interface behaves as a net negative charge.
  • the net negative charge makes the Si-AlOx interface The energy band is bent, and it also prevents minority carriers from drifting to the back surface, resulting in excellent field passivation effect.
  • the material of the first passivation layer 2 is only selected from: aluminum oxide.
  • the amount of negative charge carried by the first passivation layer 2 is 1 ⁇ 10 11 to 1 ⁇ 10 13 .
  • the amount of negative charge carried by the aluminum oxide is within this range and has a good passivation effect, especially a good field passivation effect.
  • aluminum oxide as the first passivation layer 2 is easy to mass-produce, and the first passivation layer 2 formed has good uniformity, good process stability, and low process difficulty.
  • the aluminum oxide layer itself has good passivation performance due to its good chemical passivation effect and field passivation effect.
  • an anti-reflection layer such as silicon nitride, the aluminum oxide layer can be protected first. While passivating the layer 2, it provides a considerable number of hydrogen atoms to further improve the passivation effect on the surface of the silicon substrate 1.
  • the material of the first passivation layer 2 is only selected from: aluminum oxide, and the amount of negative charge carried by the first passivation layer 2 is 1 ⁇ 10 11 , 5 ⁇ 10 11 , 9 ⁇ 10 11 , 1 ⁇ 10 12 , 2.5 ⁇ 10 12 , 6 ⁇ 10 12 , 9 ⁇ 10 12 , 1 ⁇ 10 13 .
  • the present invention also provides a photovoltaic module, including: at least one of any of the foregoing solar cells.
  • the photovoltaic module has the same or similar beneficial effects as any of the foregoing solar cells. To avoid repetition, they will not be described again here.
  • the solar cells, solar cell preparation methods, and photovoltaic modules provided by the present invention are unique.
  • the specific reason is that the inventive concept of the solar cell, solar cell preparation method, and photovoltaic module provided by the present invention is mainly to use aluminum oxide and/or silicon oxide to replace the existing amorphous silicon passivation film.
  • the above materials The first passivation layer 2 has weak parasitic absorption of light and can achieve good chemical passivation and field passivation effects.
  • the light transmittance of the first passivation layer 2 of the above-mentioned material is significantly better than that of the amorphous silicon passivation layer, which can increase the short-circuit current of the solar cell.
  • the material of the first passivation layer 2 can withstand high temperatures, and the preparation process of the first anti-reflection layer 3 is not limited to a low-temperature process, which can improve the density and uniformity of the first anti-reflection layer 3 and further enhance the anti-reflection effect. Moreover, the preparation process of the first anti-reflection layer 3 does not need to be limited to a low-temperature process, which can provide a certain hydrogen passivation effect and further enhance the passivation effect of the first passivation layer 2 .
  • the first anti-reflection layer 3 has good density and uniformity.
  • the first anti-reflection layer 3 has excellent corrosion resistance.
  • the first anti-reflection layer 3 can play a good protective role on the first passivation layer 2.
  • the passivation effect of the first passivation layer 2 is enhanced.
  • Book The inventive concept of the solar cell, the preparation method of the solar cell, and the photovoltaic module provided by the invention is also mainly that: the material of the first anti-reflection layer is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide, and the above materials are The first anti-reflection layer has good anti-reflection effect.
  • a texturing process is performed on the surface of the silicon substrate 1 to form a pyramid textured structure 11 on the surface of the silicon substrate 1.
  • the height of the pyramid structure is 3um.
  • the height is in the same direction as The direction of the aforementioned thickness is parallel, and surface damage of the silicon substrate 1 is removed at the same time.
  • the thickness of the silicon substrate 1 before texturing is 160um, and the resistivity is 1.2 ⁇ cm.
  • an aluminum oxide film is deposited on one of the surfaces as the first passivation layer 2, and is deposited using thermal ALD.
  • the deposition temperature is 250°C.
  • the deposited aluminum oxide The thickness is 3.5nm.
  • the aluminum oxide film serves as the first passivation layer 2 and has good chemical passivation effect and field passivation effect.
  • the field passivation effect originates from the negative fixed charge carried by the aluminum oxide film, and the amount of negative charge carried is 1 ⁇ 10 11 to 1 ⁇ 10 13 .
  • a layer of high refractive index hydrogen-rich silicon nitride film is deposited on the side of the aluminum oxide film away from the silicon substrate 1.
  • the refractive index of the silicon nitride film is 2.2.
  • the thickness of the silicon nitride film is 5 nm, forming silicon nitride.
  • the silane:ammonia ratio was 1:4, and the deposition temperature was 480°C.
  • the high refractive index hydrogen-rich silicon nitride film deposit a layer of medium refractive index silicon nitride film.
  • the refractive index of the medium refractive index silicon nitride film is 2.1.
  • the thickness of the medium refractive index silicon nitride film is is 15nm.
  • the silane:ammonia ratio is 1:6 and the deposition temperature is 480°C.
  • a layer of low refractive index silicon nitride is deposited on top of the medium refractive index silicon nitride film.
  • the refractive index of the low refractive index silicon nitride film is 1.95.
  • the thickness of the low refractive index silicon nitride film is 25nm, forming a low refractive index.
  • the silane:ammonia ratio was 1:16 and the deposition temperature was 480°C.
  • a silicon oxynitride film is deposited on the surface of the low refractive index silicon nitride film, and two layers of silicon oxynitride films are deposited. Along the direction away from the silicon substrate 1, the thickness of the two silicon oxynitride films are 20nm and 30nm respectively, and the refractive indexes are respectively 1.85, 1.75, and the deposition temperature is both 480°C.
  • the silicon substrate 1 After depositing two layers of silicon nitride oxide films, perform FGA annealing.
  • the annealing temperature is 500°C
  • the annealing time is 30 minutes
  • the annealing hydrogen flow rate is 5 standard liters per minute (slm).
  • the silicon substrate 1 After FGA annealing, the silicon substrate 1 has a The corrosion resistance of the silicon nitride film has been greatly improved.
  • the corrosion rate of the silicon nitride anti-reflection film deposited at 200°C in the existing technology is In terms of 5 nm/s, the etching rate of the silicon nitride film after FGA annealing in Example 1 is 1 nm/s.
  • the outermost silicon nitride oxide film is corroded away from the surface of the silicon substrate 1 The rate is 1nm/s.
  • an amorphous silicon film is grown on the upper layer of the silicon nitride stacked film as a protective layer for the first anti-reflection layer 3.
  • the thickness of the amorphous silicon film is 10 nm.
  • Single-sided HF cleaning is used to remove the natural oxide layer on the other side of the silicon substrate 1.
  • the HF concentration is 5% and the cleaning time is 100S.
  • the textured surface on the other side of the silicon substrate 1 is polished and etched using a high-temperature alkali process.
  • the KOH concentration used for polishing is 1.5%-10%.
  • Corresponding polishing additives can optionally be added.
  • the polishing temperature is 40°C to At 90°C, the reflectivity of the polished surface is above 20%.
  • the subsequent interdigitated structure is produced, including an amorphous silicon passivation layer, an interdigitated N-type amorphous silicon layer 5 and an interdigitated P-type amorphous silicon layer 6, and doped amorphous silicon.
  • a transparent conductive layer 7 is formed on the transparent conductive layer 7, and a metal electrode is formed on the transparent conductive layer 7.
  • a texturing treatment is performed on the surface to form a pyramid textured structure on the surface of the silicon substrate 1.
  • the height of the pyramid structure is 3um, and the surface damage of the silicon substrate 1 is removed at the same time.
  • the thickness of the silicon substrate 1 before texturing is 160um, and the resistivity is 1.2 ⁇ cm.
  • an aluminum oxide film is deposited on one surface as the first passivation layer 2.
  • the deposition is performed using the PEALD method.
  • the deposition temperature is 220°C.
  • the thickness of the deposited aluminum oxide is 2.5nm.
  • Aluminum film has good chemical passivation effect and field passivation effect.
  • the field passivation effect originates from the fixed charge carried by the aluminum oxide film that is negative, and the amount of negative charge it carries is 1 ⁇ 10 11 to 1 ⁇ 10 13 .
  • a layer of high refractive index hydrogen-rich silicon nitride is deposited on the upper layer of the aluminum oxide film.
  • the refractive index of the high refractive index hydrogen-rich silicon nitride is 2.25.
  • the thickness of the high refractive index hydrogen-rich silicon nitride is 5nm.
  • the silane:ammonia ratio is 1.2:4 and the deposition temperature is 480°C.
  • the high refractive index silicon nitride film layer deposit a layer of medium refractive index silicon nitride.
  • the refractive index of the medium refractive index silicon nitride is 2.08.
  • the thickness of the medium refractive index silicon nitride is 15nm, forming a medium refractive index. refraction
  • the silane:ammonia ratio is 1:7, and the deposition temperature is 480°C.
  • a layer of low refractive index silicon nitride is deposited on top of the medium refractive index silicon nitride film layer.
  • the refractive index of the low refractive index silicon nitride is 1.9, and the thickness of the low refractive index silicon nitride is 25nm, forming a low refractive index.
  • the silane:ammonia ratio is 1:18, and the deposition temperature is 480°C.
  • a silicon oxynitride film is deposited on the surface of low refractive index silicon nitride, and two layers of silicon oxynitride films are deposited. Along the direction away from the silicon substrate 1, the thickness of the two layers of silicon nitride oxide films are 20nm and 30nm respectively, and the refractive index is 1.85. , 1.75, and the deposition temperatures are all 480°C.
  • the annealing temperature is 500°C
  • the annealing time is 30 minutes
  • the annealing hydrogen flow rate is 5slm.
  • the corrosion resistance of the silicon nitride film layer has been greatly improved.
  • the etching rate of the silicon nitride film layer is 0.8 nm/s.
  • the outermost silicon nitride oxide film is far away from the silicon substrate 1
  • the corrosion rate of the surface is 0.9nm/s.
  • a polysilicon film is grown on the upper layer of the silicon nitride stacked film as a protective layer for the first anti-reflection layer 3.
  • the thickness of the polysilicon film is 10 nm.
  • the body minority carrier lifetime of the silicon substrate 1 is 3 ms.
  • Single-sided HF cleaning is used to remove the natural oxide layer on the other side of the silicon substrate 1.
  • the HF concentration is 5% and the cleaning time is 100S.
  • the textured surface on the other side of the silicon substrate 1 is polished and etched using a high-temperature alkali process.
  • the KOH concentration used for polishing is 1.5%-10%.
  • Corresponding polishing additives can optionally be added.
  • the polishing temperature is 40°C to At 90°C, the reflectivity of the polished surface is above 20%.
  • the subsequent interdigitated structure is produced, including an amorphous silicon passivation layer, an interdigitated N-type amorphous silicon layer 5 and an interdigitated P-type amorphous silicon layer 6, and doped amorphous silicon.
  • a transparent conductive layer 7 is formed on the transparent conductive layer 7, and a metal electrode is formed on the transparent conductive layer 7.
  • a texturing treatment is performed on the surface to form a pyramid textured structure on the surface of the silicon substrate 1.
  • the height of the pyramid structure is 3um, and the surface damage of the silicon substrate 1 is removed at the same time.
  • the thickness of the silicon substrate 1 before texturing is 160um, and the resistivity is 1.2 ⁇ cm.
  • an aluminum oxide film is deposited on one of the surfaces.
  • the deposition temperature is 220°C.
  • the indirect method PEALD equipment is used for deposition.
  • the thickness of the deposited aluminum oxide is 6.0nm.
  • the aluminum oxide film has good Chemical passivation effect and field passivation effect.
  • the field passivation effect originates from the fixed charge carried by the aluminum oxide film that is negative, and the amount of negative charge it carries is 1 ⁇ 10 11 to 1 ⁇ 10 13 .
  • a layer of high refractive index hydrogen-rich silicon nitride is deposited on the upper layer of the aluminum oxide film.
  • the refractive index of the high refractive index hydrogen-rich silicon nitride is 2.2.
  • the thickness of the high refractive index hydrogen-rich silicon nitride is 5nm.
  • the silane:ammonia ratio is 1:4 and the deposition temperature is 480°C.
  • the silane:ammonia ratio is 1:6, and the deposition temperature is 480°C.
  • a layer of low refractive index silicon nitride is deposited on top of the medium refractive index silicon nitride film layer.
  • the refractive index of the low refractive index silicon nitride is 1.95.
  • the thickness of the low refractive index silicon nitride is 25nm, forming a low refractive index.
  • the silane:ammonia ratio is 1:16 and the deposition temperature is 480°C.
  • a silicon oxynitride film is deposited on the surface of low refractive index silicon nitride, and two layers of silicon oxynitride films are deposited. Along the direction away from the silicon substrate 1, the thickness of the two layers of silicon nitride oxide films are 20nm and 30nm respectively, and the refractive index is 1.85 respectively. , 1.75, deposition temperature 480°C.
  • the annealing temperature is 500°C
  • the annealing time is 30 minutes
  • the annealing hydrogen flow rate is 5slm.
  • the corrosion resistance of the silicon nitride film layer has been greatly improved.
  • the etching rate of the silicon nitride film layer is 1.3 nm/s.
  • the outermost silicon nitride oxide film is far away from the silicon substrate 1 The corrosion rate of the surface is 1.3nm/s.
  • a polysilicon film is grown on the upper layer of the silicon nitride stacked film as a protective layer for the first anti-reflection layer 3.
  • the thickness of the polysilicon film is 10 nm.
  • the body minority carrier lifetime of the silicon substrate 1 is 3 ms.
  • Single-sided HF cleaning is used to remove the natural oxide layer on the other side of the silicon substrate 1.
  • the HF concentration is 5% and the cleaning time is 100S. and polish and engrave the textured surface on the other side of the silicon substrate 1 Erosion, use high-temperature alkali process for polishing, the KOH concentration used for polishing is 1.5%-10%, you can optionally add corresponding polishing additives, the polishing temperature is 40°C to 90°C, and the reflectivity of the polished surface is above 20%.
  • the subsequent interdigitated structure is produced, including an amorphous silicon passivation layer, an interdigitated N-type amorphous silicon layer 5 and an interdigitated P-type amorphous silicon layer 6, and doped amorphous silicon.
  • a transparent conductive layer 7 is formed on the transparent conductive layer 7, and a metal electrode is formed on the transparent conductive layer 7.
  • an aluminum oxide film is deposited on the front side of the silicon substrate 1 for passivation, and then a silicon nitride antireflection film layer is deposited at 200° C. using the existing technology. Since the low-temperature silicon nitride film layer needs to be deposited with plate-type PECVD equipment, the equipment cost is high. At the same time, the passivation effect of the low-temperature deposited silicon nitride film layer and the aluminum oxide film will be worse than that of the corresponding high-temperature silicon nitride film layer. Reflective film layer, thus affecting the efficiency of solar cells.
  • the low-temperature silicon nitride film layer has poor density and uniformity, resulting in poor corrosion resistance of the low-temperature silicon nitride film layer, which will cause the low-temperature silicon nitride film layer to be easily corroded, thereby damaging the passivation layer.
  • the front passivation layer is passivated with an amorphous silicon film layer.
  • the amorphous silicon film will greatly affect the short-circuit current of the battery due to its high optical parasitic absorption.
  • the anti-reflective film layer (silicon nitride) on the front cannot be completed using a high-temperature process with strong corrosion resistance, which narrows the process window of the solar cell preparation process, and low-temperature
  • the anti-reflection coating on the front side has poor density and uniformity, which results in poor corrosion resistance of the anti-reflection coating on the low-temperature front side.
  • the anti-reflection coating on the low-temperature front side is easily corroded, thereby damaging the passivation layer.
  • the front anti-reflection film layer When depositing the front anti-reflection film layer on the silicon substrate 1, a single layer of silicon nitride or a double layer of silicon nitride film is used to achieve this. Compared with the multi-layer silicon nitride film mentioned in the embodiment, and For the first anti-reflection layer 3 implemented by a stacked structure of multi-layer silicon nitride oxide film layers, the reflectivity will be significantly higher, resulting in less optical absorption and ultimately lower short-circuit current of the battery, affecting the conversion efficiency of the battery. The main reason is that in the front anti-reflection film layer of Comparative Example 3, the refractive index of each layer does not decrease in the direction away from the silicon substrate, resulting in poor matching between the layers.
  • Table 1 Comparison table of main process parameters and performance parameters of Examples 1 to 3 and Comparative Examples 1 to 3.
  • the hydrogen in the silicon nitride in the first anti-reflection layer 3 can further move to the surface of the silicon substrate 1 or even into the body of the silicon substrate 1, thereby improving the passivation effect on the surface of the silicon substrate 1.
  • the defects in the silicon substrate 1 can also be well passivated.
  • the first passivation layer 2 of the above material has weak parasitic absorption of light, and can achieve good chemical passivation and field passivation effects.
  • the first anti-reflection layer 3 of the above material has good anti-reflection effect.
  • the material of the first passivation layer 2 can withstand high temperatures, and the preparation process of the first anti-reflection layer 3 is not limited to a high-temperature process, which can further improve the density and uniformity of the first anti-reflection layer 3.
  • Anti-reflection layer 3 has excellent corrosion resistance, further improving the anti-reflection effect.

Abstract

The present application relates to the technical field of solar cells, and provides a solar cell and a preparation method, and a photovoltaic module. The preparation method for the solar cell comprises: forming a first passivation layer on one side of a silicon substrate, the material of the first passivation layer being selected from aluminum oxide and/or silicon oxide; and forming a first anti-reflection layer on the side of the first passivation layer away from the silicon substrate, the material of the first anti-reflection layer being selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide, wherein the first anti-reflection layer is subjected to a temperature greater than or equal to 300°C. In the present application, the material of the first passivation layer can bear high temperature, the first anti-reflection layer is subjected to a temperature larger than or equal to 300°C, and thus, the compactness and uniformity of the formed first anti-reflection layer are good, thereby further improving the anti-reflection effect; the first anti-reflection layer has excellent corrosion resistance, and the first anti-reflection layer can achieve a good protection effect on the first passivation layer, thereby further enhancing the passivation effect of the first passivation layer.

Description

太阳能电池及制备方法、光伏组件Solar cells and preparation methods, photovoltaic modules
本申请要求在2022年7月26日提交中国专利局，申请号为202210882799.6，申请名称为“太阳能电池及制备方法、光伏组件”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims priority to the Chinese patent application submitted to the China Patent Office on July 26, 2022, with the application number 202210882799.6 and the application name "Solar Cells and Preparation Methods, Photovoltaic Modules", the entire content of which is incorporated into this application by reference. middle.
技术领域Technical field
本申请涉及太阳能电池技术领域，特别是涉及太阳能电池及制备方法、光伏组件。This application relates to the technical field of solar cells, in particular to solar cells and preparation methods, and photovoltaic modules.
背景技术Background technique
太阳能电池作为一种清洁能源，具有广阔的应用前景。如何尽可能的提升太阳能电池的光电转换效率是目前的研究重点。As a clean energy source, solar cells have broad application prospects. How to improve the photoelectric conversion efficiency of solar cells as much as possible is the current research focus.
然而，现有的太阳能电池制备方法制备得到的太阳能电池，钝化性能和减反效果不佳，导致太阳能电池的光电转换效率较低。高效率、低成本是太阳能电池研究最重要的两个方向。对于晶体硅太阳能电池来说，随着晶体硅制造技术的提升，基体硅片的体载流子寿命不断提高，已经不再是制约电池效率提升的关键因素。而电池表面的钝化对转换效率的影响越来越明显。表面复合是指在硅片表面发生的复合过程，硅片中的少数载流子寿命在很大程度上受到硅片表面状态的影响，因为硅片表面有以下3个特点：(1)从硅晶体内延伸到表面的晶格结构在表面中断，表面原子出现悬挂键，排列到边缘的硅原子的电子不能组成共价键，因此出现了成为表面态的表面能级，表面态中靠近禁带中心的能级是有效的表面复合中心；(2)硅片在切片过程中表面留下的切割损伤，造成很多缺陷和晶格畸变，增加了更多的复合中心；(3)硅片表面吸附的带正、负电荷的外来杂质，也会成为复合中心。因此，无论是提高太阳能电池的转换效率，还是降低太阳能电池的生产成本，对于晶体硅太阳能电池表面钝化技术的研究都必不可少。However, the solar cells prepared by the existing solar cell preparation methods have poor passivation performance and anti-reflection effect, resulting in low photoelectric conversion efficiency of the solar cells. High efficiency and low cost are the two most important directions for solar cell research. For crystalline silicon solar cells, with the improvement of crystalline silicon manufacturing technology, the body carrier lifetime of the base silicon wafer continues to improve, and it is no longer a key factor restricting the improvement of cell efficiency. The passivation of the battery surface has an increasingly obvious impact on the conversion efficiency. Surface recombination refers to the recombination process that occurs on the surface of the silicon wafer. The minority carrier lifetime in the silicon wafer is greatly affected by the surface state of the silicon wafer, because the surface of the silicon wafer has the following three characteristics: (1) From silicon The lattice structure extending to the surface in the crystal is interrupted on the surface, and dangling bonds appear on the surface atoms. The electrons of the silicon atoms arranged to the edge cannot form covalent bonds, so a surface energy level appears as a surface state. The surface state is close to the forbidden band. The energy level in the center is an effective surface recombination center; (2) The cutting damage left on the surface of the silicon wafer during the slicing process causes many defects and lattice distortion, adding more recombination centers; (3) Silicon wafer surface adsorption Foreign impurities with positive and negative charges will also become recombination centers. Therefore, whether it is to improve the conversion efficiency of solar cells or reduce the production cost of solar cells, research on surface passivation technology of crystalline silicon solar cells is essential.
申请内容Application content
本申请提供太阳能电池及制备方法、光伏组件，旨在解决现有的太阳能电池制备方法制备得到的太阳能电池，钝化性能和减反效果不佳，导致太阳能电池的光电转换效率的问题。This application provides solar cells, preparation methods, and photovoltaic components, aiming to solve the problem of photoelectric conversion efficiency of solar cells caused by poor passivation performance and anti-reflection effect of solar cells prepared by existing solar cell preparation methods.
本申请的第一方面，提供一种太阳能电池的制备方法，包括： A first aspect of this application provides a method for preparing a solar cell, including:
在硅基底一侧形成第一钝化层；所述第一钝化层的材料选自：氧化铝，和/或，氧化硅；A first passivation layer is formed on one side of the silicon substrate; the material of the first passivation layer is selected from: aluminum oxide and/or silicon oxide;
在所述第一钝化层远离所述硅基底的一侧形成第一减反层，所述第一减反层的材料选自：氮化硅、氮氧化硅、氧化硅中的至少一种；其中，所述第一减反层经历过大于或等于300℃的温度。A first antireflection layer is formed on a side of the first passivation layer away from the silicon substrate. The material of the first antireflection layer is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. ; Wherein, the first anti-reflection layer has experienced a temperature greater than or equal to 300°C.
本申请中，第一钝化层的材料选自氧化铝，和/或，氧化硅，上述材料的第一钝化层对光的寄生性吸收较弱，且能够达到良好的化学钝化和场钝化效果。且上述材料的第一钝化层的透光率明显优于非晶硅钝化层的透光率，可以提升太阳能电池的短路电流。第一减反层的材料选自氮化硅、氮氧化硅、氧化硅中的至少一种，上述材料的第一减反层具有良好的减反效果。而且，该第一钝化层的材料能够承受高温，第一减反层经历过大于或等于300℃的温度，形成的第一减反层的致密性和均匀性均良好，进一步提升减反效果。同时，形成的第一减反层的致密性和均匀性均良好，使得第一减反层具有优良的抗腐蚀能力，第一减反层能够对第一钝化层起到良好的保护作用，进一步增强第一钝化层的钝化效果。第一减反层经历过大于或等于300℃的温度，能够提供一定的氢钝化效果，进一步增强第一钝化层的钝化效果。In this application, the material of the first passivation layer is selected from aluminum oxide and/or silicon oxide. The first passivation layer of the above materials has weak parasitic absorption of light and can achieve good chemical passivation and field Passivating effect. Moreover, the light transmittance of the first passivation layer of the above-mentioned material is significantly better than that of the amorphous silicon passivation layer, which can increase the short-circuit current of the solar cell. The material of the first anti-reflection layer is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. The first anti-reflection layer made of the above materials has a good anti-reflection effect. Moreover, the material of the first passivation layer can withstand high temperatures. The first anti-reflection layer has experienced temperatures greater than or equal to 300°C. The formed first anti-reflection layer has good compactness and uniformity, further improving the anti-reflection effect. . At the same time, the formed first anti-reflection layer has good compactness and uniformity, so that the first anti-reflection layer has excellent corrosion resistance, and the first anti-reflection layer can play a good protective role on the first passivation layer. The passivation effect of the first passivation layer is further enhanced. The first antireflection layer has experienced a temperature greater than or equal to 300°C and can provide a certain hydrogen passivation effect, further enhancing the passivation effect of the first passivation layer.
可选的，所述在所述第一钝化层远离所述硅基底的一侧形成第一减反层，包括：Optionally, forming a first antireflection layer on a side of the first passivation layer away from the silicon substrate includes:
在大于或等于300℃的温度下，在所述第一钝化层远离所述硅基底的一侧沉积所述第一减反层。At a temperature greater than or equal to 300° C., the first antireflection layer is deposited on a side of the first passivation layer away from the silicon substrate.
可选的，所述在所述第一钝化层远离所述硅基底的一侧形成第一减反层之后，所述方法还包括：Optionally, after forming the first antireflection layer on the side of the first passivation layer away from the silicon substrate, the method further includes:
对形成有所述第一钝化层、所述第一减反层的硅基底，进行退火；退火温度大于或等于300℃。The silicon substrate on which the first passivation layer and the first anti-reflection layer are formed is annealed; the annealing temperature is greater than or equal to 300°C.
可选的，所述退火包括：氢气氛围退火，和/或，快速热处理退火。Optionally, the annealing includes: hydrogen atmosphere annealing, and/or rapid heat treatment annealing.
可选的，所述在硅基底一侧形成第一钝化层，包括：Optionally, forming a first passivation layer on one side of the silicon substrate includes:
在所述硅基底一侧，原子层沉积第一钝化层。On one side of the silicon substrate, a first passivation layer is atomically deposited.
可选的，所述在所述第一钝化层远离所述硅基底的一侧形成第一减反层之后，所述方法还包括：Optionally, after forming the first antireflection layer on the side of the first passivation layer away from the silicon substrate, the method further includes:
在所述第一减反层远离所述第一钝化层的一侧形成保护所述第一减反 层的掩膜层；A protective layer is formed on the side of the first anti-reflection layer away from the first passivation layer to protect the first anti-reflection layer. layer mask layer;
在所述硅基底另一侧形成本征非晶硅钝化层；其中，所述硅基底另一侧和所述硅基底一侧相对分布；An intrinsic amorphous silicon passivation layer is formed on the other side of the silicon substrate; wherein the other side of the silicon substrate and one side of the silicon substrate are relatively distributed;
在所述本征非晶硅钝化层上形成叉指分布的P型非晶硅层、N型非晶硅层；Form an interdigitated distribution of P-type amorphous silicon layer and N-type amorphous silicon layer on the intrinsic amorphous silicon passivation layer;
在所述P型非晶硅层上形成透明导电层和第一电极，并在所述N型非晶硅层上形成透明导电层和第二电极。A transparent conductive layer and a first electrode are formed on the P-type amorphous silicon layer, and a transparent conductive layer and a second electrode are formed on the N-type amorphous silicon layer.
可选的，所述掩膜层的材料选自硅薄膜。Optionally, the material of the mask layer is selected from silicon films.
本申请的第二方面，提供一种太阳能电池，由任一项前述的太阳能电池的制备方法制备得到。A second aspect of the present application provides a solar cell prepared by any of the foregoing solar cell preparation methods.
本申请的第三方面，提供一种太阳能电池，包括：A third aspect of this application provides a solar cell, including:
硅基底，以及依次层叠在所述硅基底一侧的第一钝化层、第一减反层；A silicon substrate, and a first passivation layer and a first antireflection layer sequentially stacked on one side of the silicon substrate;
所述第一钝化层的材料选自：氧化铝，和/或，氧化硅；The material of the first passivation layer is selected from: aluminum oxide and/or silicon oxide;
所述第一减反层的材料选自：氮化硅、氮氧化硅、氧化硅中的至少一种；所述第一减反层远离所述第一钝化层的表面，在5％浓度的氢氟酸条件下，腐蚀速率为：0.1nm/s至3nm/s。The material of the first anti-reflection layer is selected from: at least one of silicon nitride, silicon oxynitride, and silicon oxide; the surface of the first anti-reflection layer away from the first passivation layer is at a concentration of 5%. Under the condition of hydrofluoric acid, the corrosion rate is: 0.1nm/s to 3nm/s.
可选的，所述第一减反层远离所述第一钝化层的表面的反射率小于或等于2％。Optionally, the reflectance of the surface of the first antireflection layer away from the first passivation layer is less than or equal to 2%.
可选的，所述硅基底为P型硅基底。Optionally, the silicon substrate is a P-type silicon substrate.
可选的，所述第一减反层为叠层结构；在所述第一减反层中，沿着远离所述硅基底的方向，叠层结构的各层的折射率减小。Optionally, the first anti-reflection layer has a stacked structure; in the first anti-reflection layer, the refractive index of each layer of the stacked structure decreases in a direction away from the silicon substrate.
可选的，所述第一钝化层的材料仅选自：氧化铝，所述第一钝化层所带的负电荷的量为1×1011至1×1013。Optionally, the material of the first passivation layer is only selected from: aluminum oxide, and the amount of negative charge carried by the first passivation layer is 1×10 11 to 1×10 13 .
可选的，所述第一减反层包括：依次层叠的第一氮化硅膜、第二氮化硅膜、第三氮化硅膜、第一氮氧化硅膜、第二氮氧化硅膜；其中，所述第一氮化硅膜紧邻所述第一钝化层设置；在所述第一减反层中，沿着远离所述硅基底的方向，各层膜的折射率减小。Optionally, the first antireflection layer includes: a first silicon nitride film, a second silicon nitride film, a third silicon nitride film, a first silicon oxynitride film, and a second silicon oxynitride film stacked in sequence. ; Wherein, the first silicon nitride film is disposed adjacent to the first passivation layer; in the first anti-reflection layer, the refractive index of each layer of film decreases along the direction away from the silicon substrate.
可选的，所述第一钝化层的厚度为1至20nm；所述厚度所在的方向与所述第一钝化层和所述第一减反层的层叠方向平行；Optionally, the thickness of the first passivation layer is 1 to 20 nm; the direction of the thickness is parallel to the stacking direction of the first passivation layer and the first anti-reflection layer;
或，所述第一减反层厚度为50至150nm。 Or, the thickness of the first anti-reflection layer is 50 to 150 nm.
可选的，所述太阳能电池还包括：位于所述硅基底另一侧的本征非晶硅钝化层，叉指分布在所述本征非晶硅钝化层上的P型非晶硅层、N型非晶硅层，设置在所述P型非晶硅层上的透明导电层和第一电极，以及设置在所述N型非晶硅层上的透明导电层和第二电极；Optionally, the solar cell further includes: an intrinsic amorphous silicon passivation layer located on the other side of the silicon substrate, and interdigitated P-type amorphous silicon distributed on the intrinsic amorphous silicon passivation layer. layer, an N-type amorphous silicon layer, a transparent conductive layer and a first electrode provided on the P-type amorphous silicon layer, and a transparent conductive layer and a second electrode provided on the N-type amorphous silicon layer;
其中，所述硅基底另一侧和所述硅基底一侧相对分布。Wherein, the other side of the silicon substrate and one side of the silicon substrate are relatively distributed.
可选的，所述太阳能电池中少子的寿命大于或等于2ms。Optionally, the lifetime of minority carriers in the solar cell is greater than or equal to 2 ms.
本申请的第四方面，提供另一种太阳能电池，包括：A fourth aspect of this application provides another solar cell, including:
硅基底，以及依次层叠在所述硅基底一侧的第一钝化层、第一减反层；A silicon substrate, and a first passivation layer and a first antireflection layer sequentially stacked on one side of the silicon substrate;
所述第一钝化层的材料选自：氧化铝，和/或，氧化硅；The material of the first passivation layer is selected from: aluminum oxide and/or silicon oxide;
所述第一减反层的材料选自：氮化硅、氮氧化硅、氧化硅中的至少一种；所述第一减反层为叠层结构；在所述第一减反层中，沿着远离所述硅基底的方向，叠层结构的各层的折射率减小。The material of the first anti-reflection layer is selected from: at least one of silicon nitride, silicon oxynitride, and silicon oxide; the first anti-reflection layer has a stacked structure; in the first anti-reflection layer, The refractive index of each layer of the stacked structure decreases in a direction away from the silicon substrate.
可选的，所述硅基底为P型硅基底。Optionally, the silicon substrate is a P-type silicon substrate.
可选的，所述第一钝化层的材料仅选自：氧化铝，所述第一钝化层所带的负电荷的量为1×1011至1×1013。Optionally, the material of the first passivation layer is only selected from: aluminum oxide, and the amount of negative charge carried by the first passivation layer is 1×10 11 to 1×10 13 .
本申请的第五方面，提供一种光伏组件，包括：至少一个任一项前述的太阳能电池。A fifth aspect of the present application provides a photovoltaic module, including: at least one solar cell as described above.
上述光伏组件、太阳能电池的制备方法，均与前述的太阳能电池具有相同或相似的有益效果，为了避免重复，此处不再赘述。The preparation methods of the above-mentioned photovoltaic modules and solar cells have the same or similar beneficial effects as the aforementioned solar cells. To avoid repetition, they will not be described again here.
附图说明Description of drawings
为了更清楚地说明本发明实施例的技术方案，下面将对本发明实施例的描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。In order to explain the technical solutions of the embodiments of the present invention more clearly, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. , for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without exerting creative labor.
图1示出了本发明实施例中的第一种太阳能电池的结构示意图；Figure 1 shows a schematic structural diagram of a first solar cell in an embodiment of the present invention;
图2示出了本发明实施例中的一种太阳能电池的制备方法的步骤流程图；Figure 2 shows a step flow chart of a method for preparing a solar cell in an embodiment of the present invention;
图3示出了本发明实施例中的太阳能电池的第一种局部结构示意图；Figure 3 shows a first partial structural schematic diagram of a solar cell in an embodiment of the present invention;
图4示出了本发明实施例中的太阳能电池的第二种局部结构示意图； Figure 4 shows a second partial structural schematic diagram of a solar cell in an embodiment of the present invention;
图5示出了本发明实施例中的太阳能电池的第三种局部结构示意图；Figure 5 shows a third partial structural schematic diagram of a solar cell in an embodiment of the present invention;
图6示出了本发明实施例中的太阳能电池的第四种局部结构示意图；Figure 6 shows a fourth partial structural schematic diagram of a solar cell in an embodiment of the present invention;
图7示出了本发明实施例中的太阳能电池的第五种局部结构示意图。FIG. 7 shows a fifth partial structural diagram of a solar cell in an embodiment of the present invention.
附图标记说明：Explanation of reference symbols:
1-硅基底，11-硅基底的绒面结构，2-第一钝化层，3-第一减反层，31-氮化硅膜，32-氮氧化硅膜，33-氧化硅膜，4-本征非晶硅钝化层，5-N型非晶硅层，6-P型非晶硅层，7-透明导电层，8-第一电极，9-第二电极。1-Silicon substrate, 11-texture structure of the silicon substrate, 2-first passivation layer, 3-first anti-reflection layer, 31-silicon nitride film, 32-silicon oxynitride film, 33-silicon oxide film, 4-Intrinsic amorphous silicon passivation layer, 5-N-type amorphous silicon layer, 6-P-type amorphous silicon layer, 7-Transparent conductive layer, 8-First electrode, 9-Second electrode.
具体实施例Specific embodiments
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts fall within the scope of protection of the present invention.
本发明提供一种太阳能电池的制备方法，图1示出了本发明实施例中的第一种太阳能电池的结构示意图。参照图1所示，太阳能电池包括：硅基底1，对硅基底1的掺杂类型不作具体限定。例如，该硅基底1可以为N型掺杂的硅基底，或者，可以为P型掺杂的硅基底。硅基底1包括向光面和背光面，两者相对分布，并包含在至少一侧的异质结层叠结构。硅基底1的向光面可以为：太阳能电池或光伏组件中，硅基底主要光照的表面。该太阳能电池的类型不作具体限定。例如可以为HJT(Hetero-Junction with Intrinsic Thin-layer，异质结)太阳能电池、HBC(Hetero-Junction back contact，异质结背接触)太阳能电池，HBC杂化太阳能电池等。The present invention provides a method for preparing a solar cell. Figure 1 shows a schematic structural diagram of a first solar cell in an embodiment of the present invention. Referring to FIG. 1 , a solar cell includes a silicon substrate 1 , and the doping type of the silicon substrate 1 is not specifically limited. For example, the silicon substrate 1 may be an N-type doped silicon substrate, or may be a P-type doped silicon substrate. The silicon substrate 1 includes a light facing surface and a backlight surface, which are relatively distributed and include a heterojunction stacked structure on at least one side. The light-facing surface of the silicon substrate 1 may be: the surface of the silicon substrate that mainly illuminates in solar cells or photovoltaic modules. The type of the solar cell is not specifically limited. For example, it can be HJT (Hetero-Junction with Intrinsic Thin-layer, heterojunction) solar cell, HBC (Hetero-Junction back contact, heterojunction back contact) solar cell, HBC hybrid solar cell, etc.
图2示出了本发明实施例中的一种太阳能电池的制备方法的步骤流程图。参照图2所示，该太阳能电池的制备方法包括如下步骤：FIG. 2 shows a flow chart of a method for manufacturing a solar cell in an embodiment of the present invention. Referring to Figure 2, the preparation method of the solar cell includes the following steps:
步骤101，在硅基底一侧形成第一钝化层；所述第一钝化层的材料选自：氧化铝，和/或，氧化硅。Step 101: Form a first passivation layer on one side of the silicon substrate; the material of the first passivation layer is selected from: aluminum oxide and/or silicon oxide.
图3示出了本发明实施例中的太阳能电池的第一种局部结构示意图。参照图3所示，在该步骤101之前还可以对硅基底1进行清洗和制绒，在硅基底1的表面形成绒面结构11，同时去除硅基底1表面的损伤，例如，金字 塔的绒面结构。对于硅基底1的厚度等不作具体限定。例如，硅基底1的厚度d2可以为100至200μm(微米)，电阻率为0.5至5Ω·cm(欧姆·厘米)，硅基底1的体少子寿命大于300μs(微秒)。Figure 3 shows a first partial structural diagram of a solar cell in an embodiment of the present invention. Referring to Figure 3, before step 101, the silicon substrate 1 can also be cleaned and textured to form a textured structure 11 on the surface of the silicon substrate 1, and at the same time remove damage on the surface of the silicon substrate 1, such as gold characters. Suede structure of the tower. The thickness of the silicon substrate 1 and the like are not specifically limited. For example, the thickness d2 of the silicon substrate 1 can be 100 to 200 μm (microns), the resistivity is 0.5 to 5Ω·cm (ohms·cm), and the body minority carrier lifetime of the silicon substrate 1 is greater than 300 μs (microseconds).
图4示出了本发明实施例中的太阳能电池的第二种局部结构示意图。参照图4所示，可以在硅基底1制绒之后，在其的一个表面上形成第一钝化层2。Figure 4 shows a second partial structural diagram of a solar cell in an embodiment of the present invention. Referring to FIG. 4 , the first passivation layer 2 may be formed on one surface of the silicon substrate 1 after texturing.
对于第一钝化层2的形成方式不作具体限定，例如，通过沉积方式形成第一钝化层2。The formation method of the first passivation layer 2 is not specifically limited. For example, the first passivation layer 2 may be formed by deposition.
发明人发现，现有的太阳能电池的制备方法，特别是包含异质结结构的太阳能电池的制备方法，钝化效果欠佳的主要原因在于：包含异质结结构的太阳能电池中钝化层的材料选自非晶硅，由于钝化层中的非晶硅不耐高温，与钝化层紧邻的减反层被迫需要采用低温工艺制备。有人提出采用PECVD的方式来沉积减反层，PECVD的工艺温度在200-300℃之间，基本匹配非晶硅钝化层的低温工艺。但是这种方式沉积的减反层，在异质结太阳能电池的制程过程中，抗腐蚀性能差，导致对非晶硅的损伤比较严重，影响了太阳能电池的转换效率的提升，同时此结构的太阳能电池制程复杂，提升了太阳能电池的制造成本。发明人还发现，现有的太阳能电池中，减反效果不佳的主要原因在于：由于钝化层中的非晶硅不耐高温，与钝化层紧邻的减反层需要采用低温工艺制备，低温工艺制备的减反层均匀性较差，且通常不够致密，导致减反效果欠佳。同时，发明人还发现，现有的钝化层的材料多选自非晶硅，非晶硅对光的寄生吸收比较强，大幅度限制了太阳能电池的短路电流。The inventor found that the main reason for the poor passivation effect of existing solar cell preparation methods, especially the preparation method of solar cells containing heterojunction structures, is: the passivation layer in solar cells containing heterojunction structures. The material is selected from amorphous silicon. Since the amorphous silicon in the passivation layer is not resistant to high temperatures, the anti-reflection layer immediately adjacent to the passivation layer is forced to be prepared using a low-temperature process. Some people have proposed using PECVD to deposit the anti-reflection layer. The process temperature of PECVD is between 200-300°C, which basically matches the low-temperature process of amorphous silicon passivation layer. However, the anti-reflection layer deposited in this way has poor corrosion resistance during the manufacturing process of heterojunction solar cells, causing serious damage to amorphous silicon and affecting the improvement of the conversion efficiency of solar cells. At the same time, the structure of this structure The manufacturing process of solar cells is complex, which increases the manufacturing cost of solar cells. The inventor also found that the main reason for the poor anti-reflection effect in existing solar cells is that since the amorphous silicon in the passivation layer is not resistant to high temperatures, the anti-reflection layer immediately adjacent to the passivation layer needs to be prepared using a low-temperature process. The anti-reflection layer prepared by low-temperature process has poor uniformity and is usually not dense enough, resulting in poor anti-reflection effect. At the same time, the inventor also found that the existing passivation layer materials are mostly selected from amorphous silicon. Amorphous silicon has relatively strong parasitic absorption of light, which greatly limits the short-circuit current of solar cells.
针对上述问题，本发明实施例中，第一钝化层2的材料选自氧化铝，和/或，氧化硅，上述材料的第一钝化层2对光的寄生性吸收较弱，且能够达到良好的化学钝化和场钝化效果。且上述材料的第一钝化层2的透光率明显优于非晶硅钝化层的透光率，可以提升太阳能电池的短路电流。第一减反层3的材料选自氮化硅、氮氧化硅、氧化硅中的至少一种，上述材料的第一减反层3具有良好的减反效果。而且，该第一钝化层2的材料能够承受高温，稳定性较好。 In response to the above problems, in the embodiment of the present invention, the material of the first passivation layer 2 is selected from aluminum oxide and/or silicon oxide. The first passivation layer 2 of the above materials has weak parasitic absorption of light and can Achieve good chemical passivation and field passivation effects. Moreover, the light transmittance of the first passivation layer 2 of the above-mentioned material is significantly better than that of the amorphous silicon passivation layer, which can increase the short-circuit current of the solar cell. The material of the first anti-reflection layer 3 is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. The first anti-reflection layer 3 of the above materials has a good anti-reflection effect. Moreover, the material of the first passivation layer 2 can withstand high temperatures and has good stability.
步骤102，在所述第一钝化层远离所述硅基底的一侧形成第一减反层，所述第一减反层的材料选自：氮化硅、氮氧化硅、氧化硅中的至少一种；其中，所述第一减反层经历过大于或等于300℃的温度。Step 102: Form a first anti-reflection layer on the side of the first passivation layer away from the silicon substrate. The material of the first anti-reflection layer is selected from: silicon nitride, silicon oxynitride, and silicon oxide. At least one; wherein the first anti-reflection layer has experienced a temperature greater than or equal to 300°C.
图5示出了本发明实施例中的太阳能电池的第三种局部结构示意图。图6示出了本发明实施例中的太阳能电池的第四种局部结构示意图。图7示出了本发明实施例中的太阳能电池的第五种局部结构示意图。参照图5、图6、图7所示，在第一钝化层2远离硅基底1的一侧依次形成氮化硅膜31和氮氧化硅膜32、氧化硅膜33，以形成第一减反层3。第一减反层3的材料选自：氮化硅、氮氧化硅、氧化硅中的至少一种。其中，第一减反层3经历过大于或等于300℃的温度。Figure 5 shows a third partial structural schematic diagram of a solar cell in an embodiment of the present invention. Figure 6 shows a fourth partial structural diagram of a solar cell in an embodiment of the present invention. FIG. 7 shows a fifth partial structural diagram of a solar cell in an embodiment of the present invention. Referring to Figures 5, 6, and 7, a silicon nitride film 31, a silicon oxynitride film 32, and a silicon oxide film 33 are sequentially formed on the side of the first passivation layer 2 away from the silicon substrate 1 to form the first passivation layer 2. Anti-layer 3. The material of the first antireflection layer 3 is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. Among them, the first anti-reflection layer 3 has experienced a temperature greater than or equal to 300°C.
对于第一减反层3的形成方式不作具体限定，例如，通过沉积方式形成第一减反层3。The formation method of the first anti-reflection layer 3 is not specifically limited. For example, the first anti-reflection layer 3 may be formed by deposition.
该太阳能电池制备方法中，第一钝化层2的材料选自氧化铝，和/或，氧化硅，上述材料的第一钝化层2对光的寄生性吸收较弱，且能够达到良好的化学钝化和场钝化效果。且上述材料的第一钝化层2的透光率明显优于非晶硅钝化层的透光率，可以提升太阳能电池的短路电流。第一减反层3的材料选自氮化硅、氮氧化硅、氧化硅中的至少一种，上述材料的第一减反层3具有良好的减反效果。而且，该第一钝化层2的材料能够承受高温，第一减反层3经历过大于或等于300℃的温度，形成的第一减反层3的致密性和均匀性均良好，进一步提升减反效果。同时，形成的第一减反层3的致密性和均匀性均良好，使得第一减反层3具有优良的抗腐蚀能力，第一减反层3能够对第一钝化层2起到良好的保护作用，进一步增强第一钝化层2的钝化效果。第一减反层3经历过大于或等于300℃的温度，能够提供一定的氢钝化效果，进一步增强第一钝化层2的钝化效果。In this solar cell preparation method, the material of the first passivation layer 2 is selected from aluminum oxide and/or silicon oxide. The first passivation layer 2 of the above materials has weak parasitic absorption of light and can achieve good Chemical passivation and field passivation effects. Moreover, the light transmittance of the first passivation layer 2 of the above-mentioned material is significantly better than that of the amorphous silicon passivation layer, which can increase the short-circuit current of the solar cell. The material of the first anti-reflection layer 3 is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. The first anti-reflection layer 3 of the above materials has a good anti-reflection effect. Moreover, the material of the first passivation layer 2 can withstand high temperatures. The first anti-reflection layer 3 has experienced temperatures greater than or equal to 300°C. The formed first anti-reflection layer 3 has good compactness and uniformity, further improving the Anti-reflection effect. At the same time, the formed first anti-reflection layer 3 has good compactness and uniformity, so that the first anti-reflection layer 3 has excellent corrosion resistance, and the first anti-reflection layer 3 can play a good role in the first passivation layer 2 The protective effect further enhances the passivation effect of the first passivation layer 2. The first antireflection layer 3 has experienced a temperature greater than or equal to 300° C., and can provide a certain hydrogen passivation effect, further enhancing the passivation effect of the first passivation layer 2 .
可选的，上述步骤101可以包括：在硅基底1一侧，原子层沉积(Atomic layer deposition，ALD)第一钝化层2，ALD形成的第一钝化层2均匀性较好，且工艺稳定性好，工艺难度低，易于量产。例如，采用等离子增强原子层沉积(Plasmainhanced atomic，PEALD)形成第一钝化层2。Optionally, the above step 101 may include: atomic layer deposition (ALD) first passivation layer 2 on one side of the silicon substrate 1. The first passivation layer 2 formed by ALD has good uniformity, and the process It has good stability, low process difficulty and is easy to mass produce. For example, plasma enhanced atomic layer deposition (PEALD) is used to form the first passivation layer 2 .
可选的，上述步骤102可以包括：在大于或等于300℃的温度下，在第 一钝化层2远离硅基底1的一侧沉积第一减反层3，例如，可以采用等离子增强化学气象沉积(Plasma enhanced chemical vapor deposition，PECVD)。在大于或300℃的温度下，沉积第一减反层3，形成的第一减反层3的致密性和均匀性均良好，进一步提升减反效果。同时，形成的第一减反层3的致密性和均匀性均良好，使得第一减反层3具有优良的抗腐蚀能力，第一减反层3能够对第一钝化层2起到良好的保护作用，进一步增强第一钝化层2的钝化效果。在大于或300℃的温度下，沉积第一减反层3，该沉积过程能够提供一定的氢钝化效果，进一步增强第一钝化层2的钝化效果。Optionally, the above step 102 may include: at a temperature greater than or equal to 300°C, at the A first antireflection layer 3 is deposited on a side of the passivation layer 2 away from the silicon substrate 1. For example, plasma enhanced chemical vapor deposition (PECVD) can be used. When the first anti-reflection layer 3 is deposited at a temperature greater than or equal to 300° C., the first anti-reflection layer 3 formed has good density and uniformity, further improving the anti-reflection effect. At the same time, the formed first anti-reflection layer 3 has good compactness and uniformity, so that the first anti-reflection layer 3 has excellent corrosion resistance, and the first anti-reflection layer 3 can play a good role in the first passivation layer 2 The protective effect further enhances the passivation effect of the first passivation layer 2. Depositing the first antireflection layer 3 at a temperature greater than or equal to 300° C. can provide a certain hydrogen passivation effect and further enhance the passivation effect of the first passivation layer 2 .
可选的，上述步骤102之后，该方法还可以包括：对形成有第一钝化层2、第一减反层3的硅基底1，进行退火，退火温度大于或等于300℃。退火能进一步提升第一减反层3的致密性和均匀性，进一步提升减反效果。同时，形成的第一减反层3的致密性和均匀性均良好，使得第一减反层3具有优良的抗腐蚀能力，第一减反层3能够对第一钝化层2起到良好的保护作用，进一步增强第一钝化层2的钝化效果。退火过程能够提供一定的氢钝化效果，进一步增强第一钝化层2的钝化效果。Optionally, after the above step 102, the method may also include: annealing the silicon substrate 1 on which the first passivation layer 2 and the first antireflection layer 3 are formed, and the annealing temperature is greater than or equal to 300°C. Annealing can further improve the density and uniformity of the first anti-reflection layer 3 and further improve the anti-reflection effect. At the same time, the formed first anti-reflection layer 3 has good compactness and uniformity, so that the first anti-reflection layer 3 has excellent corrosion resistance, and the first anti-reflection layer 3 can play a good role in the first passivation layer 2 The protective effect further enhances the passivation effect of the first passivation layer 2. The annealing process can provide a certain hydrogen passivation effect and further enhance the passivation effect of the first passivation layer 2 .
可选的，退火包括：氢气氛围退火(Forming Gas Anneal，FGA)，和/或，快速热处理退火(Rapid temperature process，RTP)，上述两种退火工艺成熟，易于实现，而且退火效果良好。经过上述方式的退火后，能进一步提升第一减反层3的致密性和均匀性，进一步提升减反效果，进一步提升抗腐蚀能力，第一减反层3能够对第一钝化层2起到良好的保护作用，进一步增强第一钝化层2的钝化效果。退火过程能够提供一定的氢钝化效果，进一步增强第一钝化层2的钝化效果。FGA的退火温度进一步优选，例如，FGA的最高温度可以300至600℃，退火时间可以为5至60min，退火可以在真空条件下进行。RTP的具体退火参数进一步优选，例如，RTP的最高温度可以500至1000℃，退火时间可以为10至150s。Optionally, annealing includes: hydrogen atmosphere annealing (Forming Gas Anneal, FGA), and/or rapid thermal treatment annealing (Rapid temperature process, RTP). The above two annealing processes are mature, easy to implement, and have good annealing effects. After annealing in the above manner, the density and uniformity of the first anti-reflection layer 3 can be further improved, the anti-reflection effect can be further improved, and the corrosion resistance can be further improved. The first anti-reflection layer 3 can act on the first passivation layer 2 It achieves a good protective effect and further enhances the passivation effect of the first passivation layer 2 . The annealing process can provide a certain hydrogen passivation effect and further enhance the passivation effect of the first passivation layer 2 . The annealing temperature of FGA is further preferred. For example, the maximum temperature of FGA can be 300 to 600°C, the annealing time can be 5 to 60 minutes, and the annealing can be performed under vacuum conditions. The specific annealing parameters of RTP are further preferred. For example, the maximum temperature of RTP can be 500 to 1000°C, and the annealing time can be 10 to 150s.
例如，若第一钝化层2的材料包括氧化铝(Al2O3)，鉴于其良好的化学钝化效果和场钝化效果，本身具有良好的钝化性能，再通过在氧化铝薄膜上面覆盖氮化硅等第一减反层3后，可以保护氧化铝钝化膜的同时，提供相当的氢原子数量，进一步提高硅基底1表面的钝化效果。再经过诸如 FGA或者RTP的退火过程之后，第一减反层3中的氮化硅中的氢可以进一步向硅基底1表面，甚至是硅基底1体内移动，进而硅基底1表面的钝化效果得到改善的同时，硅基底1内的缺陷也能够得到很好的钝化。这个从有效少子寿命的数据上也可以看出来。在经过氧化铝材料的第一钝化层3的钝化后，有效少子寿命范围在300至600us左右，再经过氮化硅膜覆盖之后，少子寿命可以达到1ms以上，最后经过退火处理之后，硅基底1的有效少子寿命可以达到2ms以上。For example, if the material of the first passivation layer 2 includes aluminum oxide (Al 2 O 3 ), in view of its good chemical passivation effect and field passivation effect, it itself has good passivation performance, and then it is passed on the aluminum oxide film. After covering the first anti-reflection layer 3 such as silicon nitride, the aluminum oxide passivation film can be protected while providing a considerable number of hydrogen atoms, further improving the passivation effect on the surface of the silicon substrate 1 . Then go through such as After the annealing process of FGA or RTP, the hydrogen in the silicon nitride in the first anti-reflection layer 3 can further move to the surface of the silicon substrate 1 or even into the body of the silicon substrate 1 , thereby improving the passivation effect on the surface of the silicon substrate 1 At the same time, defects in the silicon substrate 1 can also be well passivated. This can also be seen from the data on the effective minority carrier lifetime. After passivation by the first passivation layer 3 of aluminum oxide material, the effective minority carrier lifetime ranges from about 300 to 600us. After being covered with a silicon nitride film, the minority carrier lifetime can reach more than 1ms. Finally, after annealing, the silicon The effective minority carrier lifetime of substrate 1 can reach more than 2ms.
更为具体的，若第一钝化层2的材料包括氧化铝(Al2O3)，采用ALD如PEALD形成第一钝化层，采用直接等离子体放电模式，即硅基底直接作为电极参与放电，而在放电过程中，由于电子速度远高于离子速度，便在电极附近形成等离子体鞘层，增大了该区域的电场，而且频率较低时，离子在电场方向变化前已经到达电极，对硅基底表面轰击，同时，通过退火处理，使AlOx沉积过程中形成的不稳定的Si-O键被破坏，进而，Si-AlOx界面处的四面体结构中的Al配位表现为净负电荷，针对P型硅基底，净负电荷使Si-AlOx界面能带弯曲，而且还阻止了少数载流子向背表面漂移，从而场钝化效果优异。More specifically, if the material of the first passivation layer 2 includes aluminum oxide (Al 2 O 3 ), ALD such as PEALD is used to form the first passivation layer, and a direct plasma discharge mode is used, that is, the silicon substrate directly serves as an electrode to participate in the discharge. , and during the discharge process, since the electron speed is much higher than the ion speed, a plasma sheath is formed near the electrode, which increases the electric field in this area. Moreover, when the frequency is low, the ions have reached the electrode before the direction of the electric field changes. Bombardment of the silicon substrate surface, and at the same time, through annealing treatment, the unstable Si-O bonds formed during the AlOx deposition process are destroyed. In turn, the Al coordination in the tetrahedral structure at the Si-AlOx interface appears as a net negative charge. , for the P-type silicon substrate, the net negative charge bends the Si-AlOx interface energy band, and also prevents minority carriers from drifting to the back surface, resulting in excellent field passivation effect.
可选的，上述步骤102之后，该方法还可以包括：在第一减反层3远离第一钝化层2的一侧形成保护该第一减反层的掩膜层。该掩膜层的厚度不作具体限定，例如，掩膜层的厚度可以为5至50nm，掩膜层的厚度在该范围内，掩膜效果和成本达到较优的平衡。然后在硅基底1的另一侧形成本征非晶硅钝化层4。其中，硅基底1的另一侧和前述的硅基底1的一侧相对分布。在本征非晶硅钝化层4上形成叉指分布的P型非晶硅层6、N型非晶硅层5。在P型非晶硅层6上形成透明导电层7和第一电极8，并在N型非晶硅层5上形成透明导电层7和第二电极9。掩膜层、本征非晶硅钝化层4、P型非晶硅层6等均可以通过沉积方式制备，例如，均可以通过PECVD方式制备得到。对于其他层或电极的制备方式，不作具体限定。Optionally, after the above step 102, the method may further include: forming a mask layer to protect the first anti-reflection layer 3 on a side of the first anti-reflection layer 3 away from the first passivation layer 2. The thickness of the mask layer is not specifically limited. For example, the thickness of the mask layer can be 5 to 50 nm. If the thickness of the mask layer is within this range, a better balance between masking effect and cost can be achieved. An intrinsic amorphous silicon passivation layer 4 is then formed on the other side of the silicon substrate 1 . Wherein, the other side of the silicon substrate 1 is distributed opposite to the aforementioned one side of the silicon substrate 1 . Interdigitally distributed P-type amorphous silicon layer 6 and N-type amorphous silicon layer 5 are formed on the intrinsic amorphous silicon passivation layer 4 . A transparent conductive layer 7 and a first electrode 8 are formed on the P-type amorphous silicon layer 6 , and a transparent conductive layer 7 and a second electrode 9 are formed on the N-type amorphous silicon layer 5 . The mask layer, intrinsic amorphous silicon passivation layer 4, P-type amorphous silicon layer 6, etc. can all be prepared by deposition, for example, they can all be prepared by PECVD. There are no specific limitations on the preparation methods of other layers or electrodes.
具体的，在形成保护该第一减反层的掩膜层之后，可以对硅基底1进行单面酸洗，清洗掉硅基底1另一侧可能自然形成的氧化硅。例如，可以采用HF进行酸洗，酸洗完毕后还可以对硅基底1另一侧进行清洗，确保硅基 底1另一侧的清洁度。在沉积完本征非晶硅钝化层4之后，可以在本征非晶硅钝化层4上先沉积整层的P型非晶硅层，然后在整层的P型非晶硅层上沉积氧化硅保护层，采用激光方式对氧化硅保护层进行图形化，或者，采用湿法化学的方式，对氧化硅保护层中图形化的区域进行腐蚀，实现对整层的P型非晶硅层的图形化。P型非晶硅层可以掺杂硼的非晶硅。该方法得到的太阳能电池的结构可以如图1所示，该太阳能电池包括硅基底1，依次层叠在硅基底1向光面的第一钝化层2、第一减反层3。层叠在硅基底1的背光侧的本征非晶硅钝化层4。本征非晶硅钝化层4上叉指状分布有P型非晶硅层6、N型非晶硅层5。相邻的P型非晶硅层6、N型非晶硅层5之间绝缘。例如，P型非晶硅层6、N型非晶硅层5之间可以通过激光开槽，使得两者之间绝缘。P型非晶硅层6和N型非晶硅层5上具有透明导电层7。位于透明导电层7上与P型非晶硅层6位置对应的第一电极8，以及与N型非晶硅层5位置对应的第二电极9。图1所示的太阳能电池，一方面，向光面的第一钝化层2和第一减反层3采用大于或等于300℃的工艺制备，进而在向光面形成了高质量的第一钝化层、优异的第一减反层，以及二者工艺和结构上的耦合，提升了抗腐蚀性和第一钝化层2的稳定性，为含有异质结结构的太阳能电池提供了效率贡献。另一方面，含有异质结结构背面设置，向光面的第一钝化层2和第一减反层3高温制备和背面异质结低温制备，从工艺上有效分开，保证了两段工艺各自的技术效果，从而实现太阳能电池向光面零栅线遮挡和优异的钝化效果，进而没有来自栅线遮挡导致的电流损失，具备高短路电流。同时，第一电极8和第二电极9均位于太阳能电池背光面，第一电极和第二电极的优化可以不受光学遮挡的限制，极大的减少第一电极和第二电极金属化带来的串联电阻增加。Specifically, after forming the mask layer to protect the first anti-reflection layer, the silicon substrate 1 can be pickled on one side to clean away the silicon oxide that may naturally form on the other side of the silicon substrate 1 . For example, HF can be used for pickling, and after the pickling is completed, the other side of the silicon substrate 1 can be cleaned to ensure that the silicon substrate Cleanliness on the other side of bottom 1. After depositing the intrinsic amorphous silicon passivation layer 4, a whole layer of P-type amorphous silicon layer can be deposited on the intrinsic amorphous silicon passivation layer 4, and then on the whole layer of P-type amorphous silicon layer Deposit a silicon oxide protective layer, use laser to pattern the silicon oxide protective layer, or use wet chemistry to etch the patterned areas of the silicon oxide protective layer to achieve the entire layer of P-type amorphous silicon. Layer graphics. The P-type amorphous silicon layer can be amorphous silicon doped with boron. The structure of the solar cell obtained by this method can be shown in Figure 1. The solar cell includes a silicon substrate 1, a first passivation layer 2 and a first anti-reflection layer 3 sequentially stacked on the light-facing side of the silicon substrate 1. An intrinsic amorphous silicon passivation layer 4 is stacked on the backlight side of the silicon substrate 1 . A P-type amorphous silicon layer 6 and an N-type amorphous silicon layer 5 are distributed interdigitally on the intrinsic amorphous silicon passivation layer 4 . The adjacent P-type amorphous silicon layer 6 and N-type amorphous silicon layer 5 are insulated from each other. For example, the P-type amorphous silicon layer 6 and the N-type amorphous silicon layer 5 can be grooved by laser to insulate them. There is a transparent conductive layer 7 on the P-type amorphous silicon layer 6 and the N-type amorphous silicon layer 5 . The first electrode 8 is located on the transparent conductive layer 7 corresponding to the position of the P-type amorphous silicon layer 6 , and the second electrode 9 is located corresponding to the position of the N-type amorphous silicon layer 5 . In the solar cell shown in Figure 1, on the one hand, the first passivation layer 2 and the first anti-reflection layer 3 on the light-facing side are prepared using a process of greater than or equal to 300°C, thereby forming a high-quality first passivation layer on the light-facing side. The passivation layer, the excellent first anti-reflection layer, and the process and structural coupling of the two improve the corrosion resistance and stability of the first passivation layer 2, providing efficiency for solar cells containing heterojunction structures. contribute. On the other hand, with a heterojunction structure on the back, the first passivation layer 2 and the first anti-reflection layer 3 on the light side are prepared at high temperature and the heterojunction on the back is prepared at low temperature, which is effectively separated from the process, ensuring a two-stage process. Their respective technical effects achieve zero grid line occlusion on the light surface of the solar cell and excellent passivation effect, thereby eliminating current loss caused by grid line occlusion and having high short-circuit current. At the same time, the first electrode 8 and the second electrode 9 are both located on the backlight surface of the solar cell. The optimization of the first electrode and the second electrode can not be restricted by optical occlusion, which greatly reduces the effects of metallization of the first electrode and the second electrode. The series resistance increases.
可选的，前述的掩膜层的材料选自硅薄膜，易于制备。例如，掩膜层的材料选自非晶硅薄膜。需要说明的是，该掩膜层在后续的工艺中会被去除。Optionally, the material of the aforementioned mask layer is selected from silicon thin film, which is easy to prepare. For example, the material of the mask layer is selected from amorphous silicon films. It should be noted that this mask layer will be removed in subsequent processes.
本发明还提供一种太阳能电池，该太阳能电池由任一前述的太阳能电池的制备方法制备得到。该太阳能电池具有与该太阳能电池的制备方法相同或相似的有益效果，为了避免重复，此处不再赘述。 The present invention also provides a solar cell, which is prepared by any of the aforementioned solar cell preparation methods. The solar cell has the same or similar beneficial effects as the preparation method of the solar cell, which will not be described again in order to avoid repetition.
本发明还提供一种太阳能电池，参照图1所示，该太阳能电池包括硅基底，以及依次层叠在硅基底一侧的第一钝化层2、第一减反层3。此处的一侧可以为硅基底1的背光面，也可以是硅基底1的向光面。例如，图1中，第一钝化层2、第一减反层3依次层叠在硅基底1的向光面。The present invention also provides a solar cell. As shown in FIG. 1 , the solar cell includes a silicon substrate, and a first passivation layer 2 and a first anti-reflection layer 3 sequentially stacked on one side of the silicon substrate. One side here may be the backlight surface of the silicon substrate 1 or the light-facing surface of the silicon substrate 1 . For example, in FIG. 1 , the first passivation layer 2 and the first antireflection layer 3 are sequentially stacked on the light-facing surface of the silicon substrate 1 .
本发明实施例中，第一钝化层2的材料选自氧化铝，和/或，氧化硅，上述材料的第一钝化层2对光的寄生性吸收较弱，且能够达到良好的化学钝化和场钝化效果。且上述材料的第一钝化层2的透光率明显优于非晶硅钝化层的透光率，可以提升太阳能电池的短路电流。第一减反层3的材料选自氮化硅、氮氧化硅、氧化硅中的至少一种，上述材料的第一减反层3具有良好的减反效果。而且，该第一钝化层2的材料能够承受高温，第一减反层3的制备工艺不用限定为低温工艺，进而可以提升第一减反层3的致密性和均匀性，进一步提升减反效果。同时，第一减反层3远离第一钝化层2的表面，在5％浓度的氢氟酸条件下，腐蚀速率为：0.1nm/s(纳米/秒)至3nm/s，即，第一减反层3具有较高的致密性和优良的抗腐蚀能力，第一减反层3能够对第一钝化层2起到良好的保护作用，进一步增强第一钝化层2的钝化效果。第一减反层3的制备工艺不用限定为低温工艺，能够提供一定的氢钝化效果，进一步增强第一钝化层2的钝化效果。In the embodiment of the present invention, the material of the first passivation layer 2 is selected from aluminum oxide and/or silicon oxide. The first passivation layer 2 of the above materials has weak parasitic absorption of light and can achieve good chemical properties. Passivation and field passivation effects. Moreover, the light transmittance of the first passivation layer 2 of the above-mentioned material is significantly better than that of the amorphous silicon passivation layer, which can increase the short-circuit current of the solar cell. The material of the first anti-reflection layer 3 is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. The first anti-reflection layer 3 of the above materials has a good anti-reflection effect. Moreover, the material of the first passivation layer 2 can withstand high temperatures, and the preparation process of the first anti-reflection layer 3 does not need to be limited to a low-temperature process, thereby improving the density and uniformity of the first anti-reflection layer 3 and further improving the anti-reflection properties. Effect. At the same time, the first antireflection layer 3 is far away from the surface of the first passivation layer 2. Under the condition of 5% concentration of hydrofluoric acid, the corrosion rate is: 0.1nm/s (nanometer/second) to 3nm/s, that is, the first The first anti-reflection layer 3 has high density and excellent corrosion resistance. The first anti-reflection layer 3 can play a good protective role on the first passivation layer 2 and further enhance the passivation of the first passivation layer 2 Effect. The preparation process of the first antireflection layer 3 does not need to be limited to a low-temperature process, which can provide a certain hydrogen passivation effect and further enhance the passivation effect of the first passivation layer 2 .
例如，第一减反层3远离第一钝化层2的表面，在5％浓度的氢氟酸条件下，腐蚀速率可以为：0.1nm/s、0.7nm/s、1.1nm/s、1.9nm/s、2.3nm/s、2.6nm/s、3nm/s。For example, on the surface of the first antireflection layer 3 away from the first passivation layer 2, under the condition of 5% concentration of hydrofluoric acid, the corrosion rate can be: 0.1nm/s, 0.7nm/s, 1.1nm/s, 1.9 nm/s, 2.3nm/s, 2.6nm/s, 3nm/s.
可选的，第一减反层3远离第一钝化层2的表面的反射率小于或等于2％，第一减反层3远离第一钝化层2的表面的反射率较低，可以减少光学寄生性吸收，提升了太阳能电池的短路电流，提升了太阳能电池的光电转换效率。Optionally, the reflectance of the surface of the first anti-reflection layer 3 far away from the first passivation layer 2 is less than or equal to 2%, and the reflectivity of the surface of the first anti-reflection layer 3 far away from the first passivation layer 2 is low. Reduce optical parasitic absorption, increase the short-circuit current of solar cells, and improve the photoelectric conversion efficiency of solar cells.
例如，第一减反层3远离第一钝化层2的表面的反射率为：2％、1.9％、1.7％、1.4％、1.1％、0.9％、0.7％。For example, the reflectivity of the surface of the first antireflection layer 3 away from the first passivation layer 2 is: 2%, 1.9%, 1.7%, 1.4%, 1.1%, 0.9%, 0.7%.
可选的，硅基底1为P型硅基底，P型硅基底相对于N型硅基底而言，成本更低，可以降低太阳能电池的成本。同时，若第一钝化层2的材料选自氧化铝，作为钝化材料的氧化铝通常带有负的固定电荷，对P型硅基底具 有良好的钝化效果，特别是具有良好的场钝化效果。Optionally, the silicon substrate 1 is a P-type silicon substrate. Compared with the N-type silicon substrate, the P-type silicon substrate has a lower cost and can reduce the cost of the solar cell. At the same time, if the material of the first passivation layer 2 is selected from aluminum oxide, the aluminum oxide as the passivation material usually has a negative fixed charge and has a negative fixed charge on the P-type silicon substrate. It has good passivation effect, especially good field passivation effect.
可选的，第一钝化层2的材料仅选自：氧化铝，第一钝化层2所带的负电荷的量为1×1011至1×1013，第一钝化层2的氧化铝所带的负电荷的量在该范围内，具有良好的钝化效果，特别是具有良好的场钝化效果。同时，氧化铝作为第一钝化层2易于量产，形成的第一钝化层2的均匀性较好，且工艺稳定性好，工艺难度低。并且，氧化铝层鉴于其良好的化学钝化效果和场钝化效果，本身具有良好的钝化性能，再通过在氧化铝层上面覆盖氮化硅等减反层后，可以保护氧化铝材料的第一钝化层2的同时，提供相当的氢原子数量，进一步提高硅基底1表面的钝化效果。Optionally, the material of the first passivation layer 2 is only selected from: aluminum oxide. The amount of negative charge carried by the first passivation layer 2 is 1×10 11 to 1×10 13 . The amount of negative charge carried by the aluminum oxide is within this range and has a good passivation effect, especially a good field passivation effect. At the same time, aluminum oxide as the first passivation layer 2 is easy to mass-produce, and the first passivation layer 2 formed has good uniformity, good process stability, and low process difficulty. In addition, the aluminum oxide layer itself has good passivation performance due to its good chemical passivation effect and field passivation effect. By covering the aluminum oxide layer with an anti-reflection layer such as silicon nitride, the aluminum oxide material can be protected. At the same time, the first passivation layer 2 provides a considerable number of hydrogen atoms to further improve the passivation effect on the surface of the silicon substrate 1 .
例如，第一钝化层2的材料仅选自：氧化铝，第一钝化层2所带的负电荷的量为1×1011、5×1011、9×1011、1×1012、2.5×1012、6×1012、9×1012、1×1013。For example, the material of the first passivation layer 2 is only selected from: aluminum oxide, and the amount of negative charge carried by the first passivation layer 2 is 1×10 11 , 5×10 11 , 9×10 11 , 1×10 12 , 2.5×10 12 , 6×10 12 , 9×10 12 , 1×10 13 .
可选的，参照图1所示，第一减反层3为叠层结构。在第一减反层3中，沿着远离硅基底1的方向，叠层结构的各层的折射率减小，叠层结构的各层的折射率匹配性好，第一减反层3的减反效果更加优良。需要说明的是，沿着远离硅基底1的方向，叠层结构的各层的折射率减小的幅度不作具体限定。图1中，沿着远离硅基底1的方向，第一减反层3由氮化硅膜31和氮氧化硅膜32组成。Optionally, as shown in FIG. 1 , the first anti-reflection layer 3 has a stacked structure. In the first anti-reflection layer 3, along the direction away from the silicon substrate 1, the refractive index of each layer of the laminated structure decreases, and the refractive index matching of each layer of the laminated structure is good. The anti-reflection effect is even better. It should be noted that, along the direction away from the silicon substrate 1, the extent of the reduction in the refractive index of each layer of the stacked structure is not specifically limited. In FIG. 1 , along the direction away from the silicon substrate 1 , the first antireflection layer 3 is composed of a silicon nitride film 31 and a silicon oxynitride film 32 .
可选的，第一减反层3包括：依次层叠的第一氮化硅膜、第二氮化硅膜、第三氮化硅膜、第一氮氧化硅膜、第二氮氧化硅膜。其中，第一氮化硅膜紧邻第一钝化层2设置。在第一减反层3中，沿着远离硅基底1的方向，各层膜的折射率减小，第一减反层3的各层的折射率匹配性好，上述结构的第一减反层3的减反效果更加优良。同样的，沿着远离硅基底1的方向，第一减反层3中各层膜的折射率减小的幅度不作具体限定。Optionally, the first antireflection layer 3 includes: a first silicon nitride film, a second silicon nitride film, a third silicon nitride film, a first silicon oxynitride film, and a second silicon oxynitride film stacked in sequence. Wherein, the first silicon nitride film is disposed closely adjacent to the first passivation layer 2 . In the first anti-reflection layer 3, along the direction away from the silicon substrate 1, the refractive index of each layer of the film decreases, and the refractive index matching of each layer of the first anti-reflection layer 3 is good. The first anti-reflection of the above structure The anti-reflection effect of layer 3 is even better. Similarly, the extent to which the refractive index of each film in the first anti-reflection layer 3 decreases in the direction away from the silicon substrate 1 is not specifically limited.
可选的，参照图1所示，第一钝化层2的厚度d1为1至20nm(纳米)，该厚度所在的方向与第一钝化层2和第一减反层3的层叠方向平行，第一钝化层2的厚度d1在该范围内，钝化效果更优。需要说明的是，全文中所提及的厚度的方向均如此定义。Optionally, as shown in Figure 1, the thickness d1 of the first passivation layer 2 is 1 to 20 nm (nanometer), and the direction of the thickness is parallel to the stacking direction of the first passivation layer 2 and the first anti-reflection layer 3. , the thickness d1 of the first passivation layer 2 is within this range, and the passivation effect is better. It should be noted that the direction of thickness mentioned throughout this article is defined in this way.
例如，第一钝化层2的厚度d1为1nm、3nm、6nm、7nm、11nm、 15nm、18nm、20nm。For example, the thickness d1 of the first passivation layer 2 is 1 nm, 3 nm, 6 nm, 7 nm, 11 nm, 15nm, 18nm, 20nm.
可选的，第一减反层3的厚度为50至150nm，第一减反层3的厚度在该范围内，减反效果更优。例如，第一减反层3的厚度为50nm、53nm、60nm、79nm、91nm、110nm、130nm、150nm。Optionally, the thickness of the first anti-reflection layer 3 is 50 to 150 nm. If the thickness of the first anti-reflection layer 3 is within this range, the anti-reflection effect will be better. For example, the thickness of the first antireflection layer 3 is 50nm, 53nm, 60nm, 79nm, 91nm, 110nm, 130nm, and 150nm.
可选的，参照图1所示，太阳能电池还包括：位于硅基底1另一侧的本征非晶硅钝化层4，叉指分布在本征非晶硅钝化层4上的P型非晶硅层6、N型非晶硅层5，设置在P型非晶硅层6上的透明导电层7和第一电极8，以及设置在N型非晶硅层5上的透明导电层7和第二电极9。其中，硅基底1另一侧和硅基底1一侧相对分布。就是说该太阳能电池为异质结太阳能电池，例如，如图1所示，该太阳能电池为背接触异质结太阳能电池，第一电极8和第二电极9均设置在太阳能电池的背光面，减少了向光面遮挡，可以提升短路电流。Optionally, as shown in Figure 1, the solar cell also includes: an intrinsic amorphous silicon passivation layer 4 located on the other side of the silicon substrate 1, and interdigitated P-type passivation layers distributed on the intrinsic amorphous silicon passivation layer 4. Amorphous silicon layer 6, N-type amorphous silicon layer 5, transparent conductive layer 7 and first electrode 8 provided on P-type amorphous silicon layer 6, and transparent conductive layer provided on N-type amorphous silicon layer 5 7 and the second electrode 9. Among them, the other side of the silicon substrate 1 and one side of the silicon substrate 1 are relatively distributed. That is to say, the solar cell is a heterojunction solar cell. For example, as shown in Figure 1, the solar cell is a back contact heterojunction solar cell. The first electrode 8 and the second electrode 9 are both arranged on the backlight surface of the solar cell. Reducing the occlusion of the light surface can increase the short-circuit current.
图1所示的太阳能电池，该太阳能电池包括硅基底1，依次层叠在硅基底1向光面的第一钝化层2、第一减反层3。层叠在硅基底1的背光侧的本征非晶硅钝化层4。本征非晶硅钝化层4上叉指状分布有P型非晶硅层6、N型非晶硅层5。相邻的P型非晶硅层6、N型非晶硅层5之间绝缘。例如，P型非晶硅层6、N型非晶硅层5之间可以通过激光开槽，使得两者之间绝缘。P型非晶硅层6和N型非晶硅层5上具有透明导电层7。位于透明导电层7上与P型非晶硅层6位置对应的第一电极8，以及与N型非晶硅层5位置对应的第二电极9。一方面，向光面的第一钝化层和第一减反层可以采用大于或等于300℃的工艺制备，进而在向光面形成了高质量的第一钝化层、优异的第一减反层，以及二者工艺和结构上的耦合，提升了抗腐蚀性和第一钝化层的稳定性，为含有异质结结构的太阳能电池提供了效率贡献。另一方面，含有异质结结构背面设置，向光面的第一钝化层和第一减反层高温制备和背面异质结低温制备，从工艺上有效分开，保证了两段工艺各自的技术效果，从而实现太阳能电池向光面零栅线遮挡和优异的钝化效果，进而没有来自栅线遮挡导致的电流损失，具备高短路电流。同时，第一电极和第二电极均位于太阳能电池背光面，第一电极和第二电极的优化可以不受光学遮挡的限制，极大的减少第一电极和第二电极金属化带来的串联 电阻增加。The solar cell shown in Figure 1 includes a silicon substrate 1, a first passivation layer 2 and a first antireflection layer 3 sequentially stacked on the light-facing surface of the silicon substrate 1. An intrinsic amorphous silicon passivation layer 4 is stacked on the backlight side of the silicon substrate 1 . A P-type amorphous silicon layer 6 and an N-type amorphous silicon layer 5 are distributed interdigitally on the intrinsic amorphous silicon passivation layer 4 . The adjacent P-type amorphous silicon layer 6 and N-type amorphous silicon layer 5 are insulated from each other. For example, the P-type amorphous silicon layer 6 and the N-type amorphous silicon layer 5 can be grooved by laser to insulate them. There is a transparent conductive layer 7 on the P-type amorphous silicon layer 6 and the N-type amorphous silicon layer 5 . The first electrode 8 is located on the transparent conductive layer 7 corresponding to the position of the P-type amorphous silicon layer 6 , and the second electrode 9 is located corresponding to the position of the N-type amorphous silicon layer 5 . On the one hand, the first passivation layer and the first anti-reflection layer on the light-facing surface can be prepared using a process greater than or equal to 300°C, thereby forming a high-quality first passivation layer and excellent first anti-reflection layer on the light-facing surface. The anti-layer, as well as the process and structural coupling of the two, improves the corrosion resistance and the stability of the first passivation layer, providing efficiency contribution to solar cells containing heterojunction structures. On the other hand, with a heterojunction structure on the back, the high-temperature preparation of the first passivation layer and the first anti-reflection layer on the light side and the low-temperature preparation of the back heterojunction are effectively separated from each other in terms of technology, ensuring the respective quality of the two processes. Technical effect, thereby achieving zero grid line occlusion and excellent passivation effect of solar cells on the light surface, thereby eliminating current loss caused by grid line occlusion and having high short-circuit current. At the same time, the first electrode and the second electrode are both located on the backlight surface of the solar cell. The optimization of the first electrode and the second electrode can not be restricted by optical occlusion, greatly reducing the series connection caused by the metallization of the first electrode and the second electrode. Resistance increases.
可选的，太阳能电池中少子的寿命大于或等于2ms，说明该太阳能电池的钝化效果优良，硅基底1内的缺陷得到了良好的钝化。例如，太阳能电池中少子的寿命为2ms、2.1ms、2.3ms、2.4ms、2.6ms、2.8ms。Optionally, the lifetime of minority carriers in the solar cell is greater than or equal to 2 ms, indicating that the solar cell has an excellent passivation effect and the defects in the silicon substrate 1 are well passivated. For example, the lifetimes of minority carriers in solar cells are 2ms, 2.1ms, 2.3ms, 2.4ms, 2.6ms, and 2.8ms.
可选的，参照图1所示，硅基底1设置第一钝化层2的一侧可以具有绒面结构11，以提升陷光效果。Optionally, as shown in FIG. 1 , the side of the silicon substrate 1 on which the first passivation layer 2 is provided may have a textured structure 11 to improve the light trapping effect.
本发明还提供另一种太阳能电池，如图1所示，该太阳电池同样包括：硅基底1，以及依次层叠在硅基底1一侧的第一钝化层2、第一减反层3。第一钝化层2的材料选自：氧化铝，和/或，氧化硅。第一减反层3的材料选自：氮化硅、氮氧化硅、氧化硅中的至少一种。上述材料的第一钝化层2对光的寄生性吸收较弱，且能够达到良好的化学钝化和场钝化效果。且上述材料的第一钝化层2的透光率明显优于非晶硅钝化层的透光率，可以提升太阳能电池的短路电流。第一减反层3的材料选自氮化硅、氮氧化硅、氧化硅中的至少一种，上述材料的第一减反层3具有良好的减反效果。而且，该第一钝化层2的材料能够承受高温，第一减反层3的制备工艺不用限定为低温工艺，进而可以提升第一减反层3的致密性和均匀性，进一步提升减反效果。第一减反层3的制备工艺不用限定为低温工艺，能够提供一定的氢钝化效果，进一步增强第一钝化层2的钝化效果。The present invention also provides another solar cell. As shown in Figure 1, the solar cell also includes: a silicon substrate 1, and a first passivation layer 2 and a first anti-reflection layer 3 sequentially stacked on one side of the silicon substrate 1. The material of the first passivation layer 2 is selected from: aluminum oxide and/or silicon oxide. The material of the first antireflection layer 3 is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. The first passivation layer 2 of the above material has weak parasitic absorption of light and can achieve good chemical passivation and field passivation effects. Moreover, the light transmittance of the first passivation layer 2 of the above-mentioned material is significantly better than that of the amorphous silicon passivation layer, which can increase the short-circuit current of the solar cell. The material of the first anti-reflection layer 3 is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. The first anti-reflection layer 3 of the above materials has a good anti-reflection effect. Moreover, the material of the first passivation layer 2 can withstand high temperatures, and the preparation process of the first anti-reflection layer 3 does not need to be limited to a low-temperature process, thereby improving the density and uniformity of the first anti-reflection layer 3 and further improving the anti-reflection properties. Effect. The preparation process of the first antireflection layer 3 does not need to be limited to a low-temperature process, which can provide a certain hydrogen passivation effect and further enhance the passivation effect of the first passivation layer 2 .
参照图1所示，第一减反层3为叠层结构。在第一减反层3中，沿着远离硅基底1的方向，叠层结构的各层的折射率减小，第一减反层3的各层的折射率匹配性好，第一减反层3的减反效果更加优良。需要说明的是，沿着远离硅基底1的方向，叠层结构的各层的折射率减小的幅度不作具体限定。Referring to FIG. 1 , the first anti-reflection layer 3 has a laminated structure. In the first anti-reflection layer 3, along the direction away from the silicon substrate 1, the refractive index of each layer of the stacked structure decreases, and the refractive index matching of each layer of the first anti-reflection layer 3 is good. The anti-reflection effect of layer 3 is even better. It should be noted that, along the direction away from the silicon substrate 1, the extent of the reduction in the refractive index of each layer of the stacked structure is not specifically limited.
该太阳能电池中的各层，可以参照前述相关记载，且能达到相同或相似的有益效果，为了避免重复，此处不再赘述。For each layer in the solar cell, reference can be made to the foregoing relevant descriptions and can achieve the same or similar beneficial effects. To avoid repetition, they will not be described again here.
可选的，硅基底1为P型硅基底，P型硅基底相对于N型硅基底而言，成本更低，可以降低太阳能电池的成本。同时，若第一钝化层2的材料若包括氧化铝，Si-AlOx界面处的四面体结构中的Al配位表现为净负电荷，针对P型硅基底，净负电荷使Si-AlOx界面能带弯曲，而且还阻止了少数载流子向背表面漂移，从而场钝化效果优异。 Optionally, the silicon substrate 1 is a P-type silicon substrate. Compared with the N-type silicon substrate, the P-type silicon substrate has a lower cost and can reduce the cost of the solar cell. At the same time, if the material of the first passivation layer 2 includes aluminum oxide, the Al coordination in the tetrahedral structure at the Si-AlOx interface behaves as a net negative charge. For the P-type silicon substrate, the net negative charge makes the Si-AlOx interface The energy band is bent, and it also prevents minority carriers from drifting to the back surface, resulting in excellent field passivation effect.
可选的，第一钝化层2的材料仅选自：氧化铝，第一钝化层2所带的负电荷的量为1×1011至1×1013，第一钝化层2的氧化铝所带的负电荷的量在该范围内，具有良好的钝化效果，特别是具有良好的场钝化效果。同时，氧化铝作为第一钝化层2易于量产，形成的第一钝化层2的均匀性较好，且工艺稳定性好，工艺难度低。同时，氧化铝层鉴于其良好的化学钝化效果和场钝化效果，本身具有良好的钝化性能，再通过在氧化铝层上面覆盖氮化硅等减反层后，可以保护氧化铝第一钝化层2的同时，提供相当的氢原子数量，进一步提高硅基底1表面的钝化效果。Optionally, the material of the first passivation layer 2 is only selected from: aluminum oxide. The amount of negative charge carried by the first passivation layer 2 is 1×10 11 to 1×10 13 . The amount of negative charge carried by the aluminum oxide is within this range and has a good passivation effect, especially a good field passivation effect. At the same time, aluminum oxide as the first passivation layer 2 is easy to mass-produce, and the first passivation layer 2 formed has good uniformity, good process stability, and low process difficulty. At the same time, the aluminum oxide layer itself has good passivation performance due to its good chemical passivation effect and field passivation effect. By covering the aluminum oxide layer with an anti-reflection layer such as silicon nitride, the aluminum oxide layer can be protected first. While passivating the layer 2, it provides a considerable number of hydrogen atoms to further improve the passivation effect on the surface of the silicon substrate 1.
例如，第一钝化层2的材料仅选自：氧化铝，第一钝化层2所带的负电荷的量为1×1011、5×1011、9×1011、1×1012、2.5×1012、6×1012、9×1012、1×1013。For example, the material of the first passivation layer 2 is only selected from: aluminum oxide, and the amount of negative charge carried by the first passivation layer 2 is 1×10 11 , 5×10 11 , 9×10 11 , 1×10 12 , 2.5×10 12 , 6×10 12 , 9×10 12 , 1×10 13 .
本发明还提供一种光伏组件，包括：至少一个任一前述的太阳能电池，该光伏组件与前述的任一太阳能电池具有相同或相似的有益效果，为了避免重复，此处不再赘述。The present invention also provides a photovoltaic module, including: at least one of any of the foregoing solar cells. The photovoltaic module has the same or similar beneficial effects as any of the foregoing solar cells. To avoid repetition, they will not be described again here.
需要说明的是，本发明提供的太阳能电池、太阳能电池的制备方法、光伏组件之间可以相互参照，且能够达到相同或相似的有益效果，为了避免重复，相关部分未再赘述。It should be noted that the solar cells, solar cell preparation methods and photovoltaic modules provided by the present invention can be mutually referenced and can achieve the same or similar beneficial effects. In order to avoid duplication, the relevant parts will not be described again.
本发明提供的太阳能电池、太阳能电池的制备方法、光伏组件，具有单一性。具体理由在于，本发明提供的太阳能电池、太阳能电池的制备方法、光伏组件的发明构思均主要在于：采用氧化铝，和/或，氧化硅，替换现有的非晶硅钝化膜，上述材料的第一钝化层2对光的寄生性吸收较弱，且能够达到良好的化学钝化和场钝化效果。且上述材料的第一钝化层2的透光率明显优于非晶硅钝化层的透光率，可以提升太阳能电池的短路电流。该第一钝化层2的材料能够承受高温，第一减反层3的制备工艺不用限定为低温工艺，进而可以提升第一减反层3的致密性和均匀性，进一步提升减反效果。并且第一减反层3的制备工艺不用限定为低温工艺，能够提供一定的氢钝化效果，进一步增强第一钝化层2的钝化效果。第一减反层3的致密性和均匀性较好，第一减反层3具有优良的抗腐蚀能力，第一减反层3能够对第一钝化层2起到良好的保护作用，进一步增强第一钝化层2的钝化效果。本 发明提供的太阳能电池、太阳能电池的制备方法、光伏组件的发明构思均还主要在于：第一减反层的材料选自氮化硅、氮氧化硅、氧化硅中的至少一种，上述材料的第一减反层具有良好的减反效果。The solar cells, solar cell preparation methods, and photovoltaic modules provided by the present invention are unique. The specific reason is that the inventive concept of the solar cell, solar cell preparation method, and photovoltaic module provided by the present invention is mainly to use aluminum oxide and/or silicon oxide to replace the existing amorphous silicon passivation film. The above materials The first passivation layer 2 has weak parasitic absorption of light and can achieve good chemical passivation and field passivation effects. Moreover, the light transmittance of the first passivation layer 2 of the above-mentioned material is significantly better than that of the amorphous silicon passivation layer, which can increase the short-circuit current of the solar cell. The material of the first passivation layer 2 can withstand high temperatures, and the preparation process of the first anti-reflection layer 3 is not limited to a low-temperature process, which can improve the density and uniformity of the first anti-reflection layer 3 and further enhance the anti-reflection effect. Moreover, the preparation process of the first anti-reflection layer 3 does not need to be limited to a low-temperature process, which can provide a certain hydrogen passivation effect and further enhance the passivation effect of the first passivation layer 2 . The first anti-reflection layer 3 has good density and uniformity. The first anti-reflection layer 3 has excellent corrosion resistance. The first anti-reflection layer 3 can play a good protective role on the first passivation layer 2. Further, The passivation effect of the first passivation layer 2 is enhanced. Book The inventive concept of the solar cell, the preparation method of the solar cell, and the photovoltaic module provided by the invention is also mainly that: the material of the first anti-reflection layer is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide, and the above materials are The first anti-reflection layer has good anti-reflection effect.
下面列举实施例，以进一步解释说明本发明。Examples are listed below to further explain the present invention.
实施例1Example 1
基于P型晶硅基底，如图3所示，在硅基底1表面进行制绒处理，在硅基底1表面形成金字塔的绒面结构11，金字塔结构高度为3um，此处的高度所在的方向与前述的厚度所在的方向平行，同时去除硅基底1的表面损伤。硅基底1制绒前的厚度为160um，电阻率为1.2Ω·cm。Based on the P-type crystalline silicon substrate, as shown in Figure 3, a texturing process is performed on the surface of the silicon substrate 1 to form a pyramid textured structure 11 on the surface of the silicon substrate 1. The height of the pyramid structure is 3um. The height here is in the same direction as The direction of the aforementioned thickness is parallel, and surface damage of the silicon substrate 1 is removed at the same time. The thickness of the silicon substrate 1 before texturing is 160um, and the resistivity is 1.2Ω·cm.
在P型硅基底1完成制绒之后，参照图4所示，在其中一表面沉积氧化铝薄膜作为第一钝化层2，采用热ALD方式进行沉积，沉积温度250℃，所沉积的氧化铝的厚度为3.5nm，氧化铝薄膜作为第一钝化层2，具备良好的化学钝化效果和场钝化效果。场钝化效果源于氧化铝膜所带有的负电的固定电荷，所带的负电荷的量为1×1011至1×1013。After texturing of the P-type silicon substrate 1 is completed, as shown in Figure 4, an aluminum oxide film is deposited on one of the surfaces as the first passivation layer 2, and is deposited using thermal ALD. The deposition temperature is 250°C. The deposited aluminum oxide The thickness is 3.5nm. The aluminum oxide film serves as the first passivation layer 2 and has good chemical passivation effect and field passivation effect. The field passivation effect originates from the negative fixed charge carried by the aluminum oxide film, and the amount of negative charge carried is 1×10 11 to 1×10 13 .
在氧化铝薄膜远离硅基底1的一侧，沉积一层高折射率富氢的氮化硅膜，氮化硅膜的折射率为2.2，该氮化硅膜的厚度为5nm，形成氮化硅膜的过程中，硅烷：氨气比为1：4，沉积温度为480℃。On the side of the aluminum oxide film away from the silicon substrate 1, a layer of high refractive index hydrogen-rich silicon nitride film is deposited. The refractive index of the silicon nitride film is 2.2. The thickness of the silicon nitride film is 5 nm, forming silicon nitride. During the film process, the silane:ammonia ratio was 1:4, and the deposition temperature was 480°C.
在高折射率富氢的氮化硅膜之上，沉积一层中折射率的氮化硅膜，中折射率的氮化硅膜的折射率为2.1，中折射率的氮化硅膜的厚度为15nm，形成中折射率的过程中，硅烷：氨气比为1：6，沉积温度为480℃。On the high refractive index hydrogen-rich silicon nitride film, deposit a layer of medium refractive index silicon nitride film. The refractive index of the medium refractive index silicon nitride film is 2.1. The thickness of the medium refractive index silicon nitride film is is 15nm. In the process of forming a medium refractive index, the silane:ammonia ratio is 1:6 and the deposition temperature is 480°C.
在中折射率的氮化硅膜之上，沉积一层低折射率的氮化硅，低折射率氮化硅膜的折射率为1.95，低折射率氮化硅膜的厚度为25nm，形成低折射率氮化硅膜的过程中，硅烷：氨气比为1：16，沉积温度为480℃。On top of the medium refractive index silicon nitride film, a layer of low refractive index silicon nitride is deposited. The refractive index of the low refractive index silicon nitride film is 1.95. The thickness of the low refractive index silicon nitride film is 25nm, forming a low refractive index. During the process of refractive index silicon nitride film, the silane:ammonia ratio was 1:16 and the deposition temperature was 480°C.
在低折射率氮化硅膜表面沉积氮氧化硅薄膜，沉积两层氮氧化硅薄膜，沿着远离硅基底1的方向，两层氮氧化硅薄膜的厚度分别为20nm、30nm，折射率分别为1.85，1.75，沉积温度均为480℃。A silicon oxynitride film is deposited on the surface of the low refractive index silicon nitride film, and two layers of silicon oxynitride films are deposited. Along the direction away from the silicon substrate 1, the thickness of the two silicon oxynitride films are 20nm and 30nm respectively, and the refractive indexes are respectively 1.85, 1.75, and the deposition temperature is both 480°C.
沉积完两层氮氧化硅薄膜后，进行FGA退火，退火温度为500℃，退火的时间为30min，退火的氢气流量为5标准升每分钟(Standardlitreperminute，slm)。经过FGA退火之后，硅基底1的体少子寿 命为3ms，氮化硅膜的耐腐蚀性能得到较大幅度的提升，经过5％的HF溶液进行腐蚀，相对于现有技术中在200℃下沉积的氮化硅减反膜的腐蚀速率为5nm/s而言，实施例1中FGA退火之后的氮化硅膜的腐蚀速率为1nm/s，实施例1中FGA退火之后，最外层的氮氧化硅薄膜远离硅基底1的表面的腐蚀速率为1nm/s。After depositing two layers of silicon nitride oxide films, perform FGA annealing. The annealing temperature is 500°C, the annealing time is 30 minutes, and the annealing hydrogen flow rate is 5 standard liters per minute (slm). After FGA annealing, the silicon substrate 1 has a The corrosion resistance of the silicon nitride film has been greatly improved. After etching with 5% HF solution, the corrosion rate of the silicon nitride anti-reflection film deposited at 200°C in the existing technology is In terms of 5 nm/s, the etching rate of the silicon nitride film after FGA annealing in Example 1 is 1 nm/s. After FGA annealing in Example 1, the outermost silicon nitride oxide film is corroded away from the surface of the silicon substrate 1 The rate is 1nm/s.
在硅基底1完成FGA退火之后，在氮化硅叠层膜的上层，生长一层非晶硅薄膜作为第一减反层3的保护层，非晶硅薄膜的厚度为10nm。After the silicon substrate 1 completes the FGA annealing, an amorphous silicon film is grown on the upper layer of the silicon nitride stacked film as a protective layer for the first anti-reflection layer 3. The thickness of the amorphous silicon film is 10 nm.
采用单面HF清洗的方式，去除硅基底1的另一侧的自然氧化层，HF的浓度为5％，清洗时间为100S。并对硅基底1的另一侧的绒面进行抛光刻蚀，采用高温碱工艺进行抛光，抛光用的KOH浓度为1.5％-10％，可选择的加入对应的抛光添加剂，抛光温度40℃至90℃，抛光后表面的反射率在20％以上。Single-sided HF cleaning is used to remove the natural oxide layer on the other side of the silicon substrate 1. The HF concentration is 5% and the cleaning time is 100S. The textured surface on the other side of the silicon substrate 1 is polished and etched using a high-temperature alkali process. The KOH concentration used for polishing is 1.5%-10%. Corresponding polishing additives can optionally be added. The polishing temperature is 40°C to At 90°C, the reflectivity of the polished surface is above 20%.
进行后续叉指状结构的制作，包括一层非晶硅钝化层，叉指状的N型非晶硅层5和叉指状的P型非晶硅层6，以及在掺杂非晶硅层上形成透明导电层7，并在透明导电层7上形成金属电极。The subsequent interdigitated structure is produced, including an amorphous silicon passivation layer, an interdigitated N-type amorphous silicon layer 5 and an interdigitated P-type amorphous silicon layer 6, and doped amorphous silicon. A transparent conductive layer 7 is formed on the transparent conductive layer 7, and a metal electrode is formed on the transparent conductive layer 7.
实施例2Example 2
基于P型晶硅基底，在表面进行制绒处理，在硅基底1表面形成金字塔的绒面结构，金字塔结构高度为3um，同时去除硅基底1的表面损伤。硅基底1制绒前的厚度为160um，电阻率为1.2Ω·cm。在P型硅基底1完成制绒之后，在其中一表面沉积氧化铝薄膜作为第一钝化层2，采用PEALD方式进行沉积，沉积温度220℃，所沉积的氧化铝的厚度为2.5nm，氧化铝薄膜具备良好的化学钝化效果和场钝化效果。场钝化效果源于氧化铝薄膜所带有的显示为负电的固定电荷，所带的负电荷的量为1×1011至1×1013。Based on the P-type crystalline silicon substrate, a texturing treatment is performed on the surface to form a pyramid textured structure on the surface of the silicon substrate 1. The height of the pyramid structure is 3um, and the surface damage of the silicon substrate 1 is removed at the same time. The thickness of the silicon substrate 1 before texturing is 160um, and the resistivity is 1.2Ω·cm. After the texturing of the P-type silicon substrate 1 is completed, an aluminum oxide film is deposited on one surface as the first passivation layer 2. The deposition is performed using the PEALD method. The deposition temperature is 220°C. The thickness of the deposited aluminum oxide is 2.5nm. Aluminum film has good chemical passivation effect and field passivation effect. The field passivation effect originates from the fixed charge carried by the aluminum oxide film that is negative, and the amount of negative charge it carries is 1×10 11 to 1×10 13 .
在氧化铝薄膜的上层，沉积一层高折射率富氢的氮化硅层，高折射率富氢的氮化硅的折射率为2.25，高折射率富氢的氮化硅的厚度为5nm，形成高折射率富氢的氮化硅的过程中，硅烷：氨气比为1.2：4，沉积温度480℃。On the upper layer of the aluminum oxide film, a layer of high refractive index hydrogen-rich silicon nitride is deposited. The refractive index of the high refractive index hydrogen-rich silicon nitride is 2.25. The thickness of the high refractive index hydrogen-rich silicon nitride is 5nm. In the process of forming high refractive index hydrogen-rich silicon nitride, the silane:ammonia ratio is 1.2:4 and the deposition temperature is 480°C.
在高折射率氮化硅膜层之上，沉积一层中折射率的氮化硅，中折射率的氮化硅的折射率为2.08，中折射率的氮化硅的厚度为15nm，形成中折射 率的氮化硅的过程中，硅烷：氨气比为1：7，沉积温度480℃。On the high refractive index silicon nitride film layer, deposit a layer of medium refractive index silicon nitride. The refractive index of the medium refractive index silicon nitride is 2.08. The thickness of the medium refractive index silicon nitride is 15nm, forming a medium refractive index. refraction In the process of silicon nitride rate, the silane:ammonia ratio is 1:7, and the deposition temperature is 480°C.
在中折射率氮化硅膜层之上，沉积一层低折射率的氮化硅，低折射率氮化硅的折射率为1.9，低折射率氮化硅的厚度为25nm，形成低折射率氮化硅的过程中，硅烷：氨气比为1：18，沉积温度480℃。On top of the medium refractive index silicon nitride film layer, a layer of low refractive index silicon nitride is deposited. The refractive index of the low refractive index silicon nitride is 1.9, and the thickness of the low refractive index silicon nitride is 25nm, forming a low refractive index. In the process of silicon nitriding, the silane:ammonia ratio is 1:18, and the deposition temperature is 480°C.
在低折射率氮化硅表面沉积氮氧化硅薄膜，沉积两层氮氧化硅薄膜，沿着远离硅基底1的方向，两层氮氧化硅薄膜的厚度分别为20nm，30nm，折射率分别为1.85，1.75，沉积温度均为480℃。A silicon oxynitride film is deposited on the surface of low refractive index silicon nitride, and two layers of silicon oxynitride films are deposited. Along the direction away from the silicon substrate 1, the thickness of the two layers of silicon nitride oxide films are 20nm and 30nm respectively, and the refractive index is 1.85. , 1.75, and the deposition temperatures are all 480°C.
沉积完两层氮氧化硅薄膜之后，进行FGA退火，退火温度为500℃，退火的时间为30min，退火的氢气流量为5slm。经过FGA退火之后，氮化硅膜层的耐腐蚀性能得到较大幅度的提升，经过5％的HF溶液进行腐蚀，相对于现有技术中在200℃下沉积的氮化硅减反膜的腐蚀速率为5nm/s而言，实施例2中FGA退火之后，氮化硅膜层的腐蚀速率为0.8nm/s，实施例2中FGA退火之后，最外层的氮氧化硅薄膜远离硅基底1的表面的腐蚀速率为0.9nm/s。After depositing two layers of silicon nitride oxide films, perform FGA annealing. The annealing temperature is 500°C, the annealing time is 30 minutes, and the annealing hydrogen flow rate is 5slm. After FGA annealing, the corrosion resistance of the silicon nitride film layer has been greatly improved. After etching with 5% HF solution, compared with the corrosion resistance of the silicon nitride anti-reflection film deposited at 200°C in the existing technology For a rate of 5 nm/s, after the FGA annealing in Example 2, the etching rate of the silicon nitride film layer is 0.8 nm/s. After the FGA annealing in Example 2, the outermost silicon nitride oxide film is far away from the silicon substrate 1 The corrosion rate of the surface is 0.9nm/s.
在硅基底1完成FGA退火之后，在氮化硅叠层膜的上层，生长一层多晶硅薄膜作为第一减反层3的保护层，多晶硅薄膜的厚度为10nm。退火后，硅基底1的体少子寿命为3ms。After the silicon substrate 1 completes the FGA annealing, a polysilicon film is grown on the upper layer of the silicon nitride stacked film as a protective layer for the first anti-reflection layer 3. The thickness of the polysilicon film is 10 nm. After annealing, the body minority carrier lifetime of the silicon substrate 1 is 3 ms.
采用单面HF清洗的方式，去除硅基底1的另一侧的自然氧化层，HF的浓度为5％，清洗时间为100S。并对硅基底1的另一侧的绒面进行抛光刻蚀，采用高温碱工艺进行抛光，抛光用的KOH浓度为1.5％-10％，可选择的加入对应的抛光添加剂，抛光温度40℃至90℃，抛光后表面的反射率在20％以上。Single-sided HF cleaning is used to remove the natural oxide layer on the other side of the silicon substrate 1. The HF concentration is 5% and the cleaning time is 100S. The textured surface on the other side of the silicon substrate 1 is polished and etched using a high-temperature alkali process. The KOH concentration used for polishing is 1.5%-10%. Corresponding polishing additives can optionally be added. The polishing temperature is 40°C to At 90°C, the reflectivity of the polished surface is above 20%.
进行后续叉指状结构的制作，包括一层非晶硅钝化层，叉指状的N型非晶硅层5和叉指状的P型非晶硅层6，以及在掺杂非晶硅层上形成透明导电层7，并在透明导电层7上形成金属电极。The subsequent interdigitated structure is produced, including an amorphous silicon passivation layer, an interdigitated N-type amorphous silicon layer 5 and an interdigitated P-type amorphous silicon layer 6, and doped amorphous silicon. A transparent conductive layer 7 is formed on the transparent conductive layer 7, and a metal electrode is formed on the transparent conductive layer 7.
实施例3Example 3
基于P型晶硅基底，在表面进行制绒处理，在硅基底1表面形成金字塔的绒面结构，金字塔结构高度为3um，同时去除硅基底1的表面损伤。硅基底1制绒前的厚度为160um，电阻率为1.2Ω·cm。 Based on the P-type crystalline silicon substrate, a texturing treatment is performed on the surface to form a pyramid textured structure on the surface of the silicon substrate 1. The height of the pyramid structure is 3um, and the surface damage of the silicon substrate 1 is removed at the same time. The thickness of the silicon substrate 1 before texturing is 160um, and the resistivity is 1.2Ω·cm.
在P型硅基底1完成制绒之后，在其中一表面沉积氧化铝薄膜，沉积温度220℃，采用间接法PEALD设备进行沉积，所沉积的氧化铝的厚度为6.0nm，氧化铝薄膜具备良好的化学钝化效果和场钝化效果。场钝化效果源于氧化铝薄膜所带有的显示为负电的固定电荷，所带的负电荷的量为1×1011至1×1013。After the texturing of the P-type silicon substrate 1 is completed, an aluminum oxide film is deposited on one of the surfaces. The deposition temperature is 220°C. The indirect method PEALD equipment is used for deposition. The thickness of the deposited aluminum oxide is 6.0nm. The aluminum oxide film has good Chemical passivation effect and field passivation effect. The field passivation effect originates from the fixed charge carried by the aluminum oxide film that is negative, and the amount of negative charge it carries is 1×10 11 to 1×10 13 .
在氧化铝薄膜的上层，沉积一层高折射率富氢的氮化硅层，高折射率富氢的氮化硅的折射率为2.2，高折射率富氢的氮化硅的厚度为5nm，形成高折射率富氢的氮化硅的过程中，硅烷：氨气比为1：4，沉积温度480℃。On the upper layer of the aluminum oxide film, a layer of high refractive index hydrogen-rich silicon nitride is deposited. The refractive index of the high refractive index hydrogen-rich silicon nitride is 2.2. The thickness of the high refractive index hydrogen-rich silicon nitride is 5nm. In the process of forming high refractive index hydrogen-rich silicon nitride, the silane:ammonia ratio is 1:4 and the deposition temperature is 480°C.
在高折射率氮化硅膜层之上，沉积一层中折射率的氮化硅，中折射率的氮化硅的折射率为2.1，中折射率的氮化硅的厚度为15nm，形成中折射率的氮化硅的过程中，硅烷：氨气比为1：6，沉积温度480℃。On the high refractive index silicon nitride film layer, deposit a layer of medium refractive index silicon nitride. The refractive index of the medium refractive index silicon nitride is 2.1. The thickness of the medium refractive index silicon nitride is 15nm, forming a medium refractive index. In the process of refractive index silicon nitride, the silane:ammonia ratio is 1:6, and the deposition temperature is 480°C.
在中折射率氮化硅膜层之上，沉积一层低折射率的氮化硅，低折射率氮化硅的折射率为1.95，低折射率氮化硅的厚度为25nm，形成低折射率氮化硅的过程中，硅烷：氨气比为1：16，沉积温度480℃。On top of the medium refractive index silicon nitride film layer, a layer of low refractive index silicon nitride is deposited. The refractive index of the low refractive index silicon nitride is 1.95. The thickness of the low refractive index silicon nitride is 25nm, forming a low refractive index. In the process of silicon nitriding, the silane:ammonia ratio is 1:16 and the deposition temperature is 480°C.
在低折射率氮化硅表面沉积氮氧化硅薄膜，沉积两层氮氧化硅薄膜，沿着远离硅基底1的方向，两层氮氧化硅薄膜的厚度分别为20nm，30nm，折射率分别为1.85，1.75，沉积温度480℃。A silicon oxynitride film is deposited on the surface of low refractive index silicon nitride, and two layers of silicon oxynitride films are deposited. Along the direction away from the silicon substrate 1, the thickness of the two layers of silicon nitride oxide films are 20nm and 30nm respectively, and the refractive index is 1.85 respectively. , 1.75, deposition temperature 480℃.
沉积完两层氮氧化硅薄膜之后，进行FGA退火，退火温度为500℃，退火的时间为30min，退火的氢气流量为5slm。经过FGA退火之后，氮化硅膜层的耐腐蚀性能得到较大幅度的提升，经过5％的HF溶液进行腐蚀，相对于现有技术中在200℃下沉积的氮化硅减反膜的腐蚀速率为5nm/s而言，实施例3中FGA退火之后，氮化硅膜层的腐蚀速率为1.3nm/s，实施例3中FGA退火之后，最外层的氮氧化硅薄膜远离硅基底1的表面的腐蚀速率为1.3nm/s。After depositing two layers of silicon nitride oxide films, perform FGA annealing. The annealing temperature is 500°C, the annealing time is 30 minutes, and the annealing hydrogen flow rate is 5slm. After FGA annealing, the corrosion resistance of the silicon nitride film layer has been greatly improved. After etching with 5% HF solution, compared with the corrosion resistance of the silicon nitride anti-reflection film deposited at 200°C in the existing technology For a rate of 5 nm/s, after the FGA annealing in Example 3, the etching rate of the silicon nitride film layer is 1.3 nm/s. After the FGA annealing in Example 3, the outermost silicon nitride oxide film is far away from the silicon substrate 1 The corrosion rate of the surface is 1.3nm/s.
在硅基底1完成FGA退火之后，在氮化硅叠层膜的上层，生长一层多晶硅薄膜作为第一减反层3的保护层，多晶硅薄膜的厚度为10nm。退火后，硅基底1的体少子寿命为3ms。After the silicon substrate 1 completes the FGA annealing, a polysilicon film is grown on the upper layer of the silicon nitride stacked film as a protective layer for the first anti-reflection layer 3. The thickness of the polysilicon film is 10 nm. After annealing, the body minority carrier lifetime of the silicon substrate 1 is 3 ms.
采用单面HF清洗的方式，去除硅基底1的另一侧的自然氧化层，HF的浓度为5％，清洗时间为100S。并对硅基底1的另一侧的绒面进行抛光刻 蚀，采用高温碱工艺进行抛光，抛光用的KOH浓度为1.5％-10％，可选择的加入对应的抛光添加剂，抛光温度40℃至90℃，抛光后表面的反射率在20％以上。Single-sided HF cleaning is used to remove the natural oxide layer on the other side of the silicon substrate 1. The HF concentration is 5% and the cleaning time is 100S. and polish and engrave the textured surface on the other side of the silicon substrate 1 Erosion, use high-temperature alkali process for polishing, the KOH concentration used for polishing is 1.5%-10%, you can optionally add corresponding polishing additives, the polishing temperature is 40°C to 90°C, and the reflectivity of the polished surface is above 20%.
进行后续叉指状结构的制作，包括一层非晶硅钝化层，叉指状的N型非晶硅层5和叉指状的P型非晶硅层6，以及在掺杂非晶硅层上形成透明导电层7，并在透明导电层7上形成金属电极。The subsequent interdigitated structure is produced, including an amorphous silicon passivation layer, an interdigitated N-type amorphous silicon layer 5 and an interdigitated P-type amorphous silicon layer 6, and doped amorphous silicon. A transparent conductive layer 7 is formed on the transparent conductive layer 7, and a metal electrode is formed on the transparent conductive layer 7.
对比例1Comparative example 1
在硅基底1制绒后，在硅基底1的正面沉积一层氧化铝薄膜进行钝化，然后采用现有技术中在200℃下沉积氮化硅减反膜层。由于低温氮化硅膜层需要用板式PECVD设备进行沉积，设备成本高，同时，低温沉积的氮化硅膜层，与氧化铝薄膜叠加后的钝化效果会差于对应的高温氮化硅减反膜层，从而影响太阳能电池的效率。主要原因在于：低温氮化硅膜层的致密性和均匀性较差，导致低温氮化硅膜层的耐腐蚀性能差，会导致低温氮化硅膜层易被腐蚀，进而损伤钝化层。After the silicon substrate 1 is textured, an aluminum oxide film is deposited on the front side of the silicon substrate 1 for passivation, and then a silicon nitride antireflection film layer is deposited at 200° C. using the existing technology. Since the low-temperature silicon nitride film layer needs to be deposited with plate-type PECVD equipment, the equipment cost is high. At the same time, the passivation effect of the low-temperature deposited silicon nitride film layer and the aluminum oxide film will be worse than that of the corresponding high-temperature silicon nitride film layer. Reflective film layer, thus affecting the efficiency of solar cells. The main reason is that the low-temperature silicon nitride film layer has poor density and uniformity, resulting in poor corrosion resistance of the low-temperature silicon nitride film layer, which will cause the low-temperature silicon nitride film layer to be easily corroded, thereby damaging the passivation layer.
对比例2Comparative example 2
在硅基底1制绒后，正面钝化层采用非晶硅膜层进行钝化，非晶硅薄膜因为其较高的光学寄生吸收，会较大幅度影响电池的短路电流。同时由于非晶硅薄膜不耐高温的特性，导致正面的减反膜层(氮化硅)无法采用耐腐蚀性能强的高温工艺来完成，缩窄了太阳能电池的制备流程的工艺窗口，且低温的正面的减反膜层的致密性和均匀性较差，导致低温正面的减反膜层的耐腐蚀性能差，会导致低温正面的减反膜层易被腐蚀，进而损伤钝化层。After the silicon substrate 1 is textured, the front passivation layer is passivated with an amorphous silicon film layer. The amorphous silicon film will greatly affect the short-circuit current of the battery due to its high optical parasitic absorption. At the same time, because the amorphous silicon film is not resistant to high temperatures, the anti-reflective film layer (silicon nitride) on the front cannot be completed using a high-temperature process with strong corrosion resistance, which narrows the process window of the solar cell preparation process, and low-temperature The anti-reflection coating on the front side has poor density and uniformity, which results in poor corrosion resistance of the anti-reflection coating on the low-temperature front side. The anti-reflection coating on the low-temperature front side is easily corroded, thereby damaging the passivation layer.
对比例3Comparative example 3
在硅基底1上沉积正面减反膜层时，采用单层的氮化硅或双层的氮化硅膜层来实现，相较于实施例所提到的多层氮化硅膜层，和多层氮氧化硅膜层的叠层结构实现的第一减反层3而言，反射率会明显偏高，从而导致光学吸收少，最终导致电池的短路电流较低，影响电池的转换效率。主要原因在于，对比例3的正面减反膜层中沿着远离硅基底的方向，各层的折射率没有减小，导致各层之间的匹配性较差。 When depositing the front anti-reflection film layer on the silicon substrate 1, a single layer of silicon nitride or a double layer of silicon nitride film is used to achieve this. Compared with the multi-layer silicon nitride film mentioned in the embodiment, and For the first anti-reflection layer 3 implemented by a stacked structure of multi-layer silicon nitride oxide film layers, the reflectivity will be significantly higher, resulting in less optical absorption and ultimately lower short-circuit current of the battery, affecting the conversion efficiency of the battery. The main reason is that in the front anti-reflection film layer of Comparative Example 3, the refractive index of each layer does not decrease in the direction away from the silicon substrate, resulting in poor matching between the layers.
实施例1至实施例3，对比例1至对比例3的主要工艺参数和性能参数参照下表1所示。需要说明的是，实施例1至实施例3，对比例1至对比例3的性能参数的测量或确定方法对应相同。The main process parameters and performance parameters of Examples 1 to 3 and Comparative Examples 1 to 3 are shown in Table 1 below. It should be noted that the measurement or determination methods of the performance parameters of Example 1 to Example 3 and Comparative Example 1 to Comparative Example 3 are correspondingly the same.
表1：实施例1至实施例3，对比例1至对比例3的主要工艺参数和性能参数对照表。
Table 1: Comparison table of main process parameters and performance parameters of Examples 1 to 3 and Comparative Examples 1 to 3.
通过上述对比可以看出，相对于对比例1至对比例3而言，实施例1至实施例3中的少子寿命明显较长，腐蚀速率明显较低，且减反效果较优，具体理由在于：实施例1至实施例3中在第一钝化层2的氧化铝薄膜上面覆盖氮化硅等第一减反层3后，可以保护氧化铝钝化膜的同时，提供相当的氢原子数量，进一步提高硅基底1表面的钝化效果。再经过FGA退火过程之后，第一减反层3中的氮化硅中的氢可以进一步向硅基底1表面，甚至是硅基底1体内移动，进而硅基底1表面的钝化效果得到改善的同时，硅基底1内的缺陷也能够得到很好的钝化。而且，上述材料的第一钝化层2对光的寄生性吸收较弱，且能够达到良好的化学钝化和场钝化效果。上述材料的第一减反层3具有良好的减反效果。而且，该第一钝化层2的材料能够承受高温，第一减反层3的制备工艺不用限定为经过了高温工艺，进而可以提升第一减反层3的致密性和均匀性，第一减反层3具有优良的抗腐蚀能力，进一步提升减反效果。It can be seen from the above comparison that compared with Comparative Examples 1 to 3, the minority carrier lifetime in Examples 1 to 3 is significantly longer, the corrosion rate is significantly lower, and the anti-reflection effect is better. The specific reasons are: : In Examples 1 to 3, after the aluminum oxide film of the first passivation layer 2 is covered with the first antireflection layer 3 such as silicon nitride, the aluminum oxide passivation film can be protected while providing a considerable number of hydrogen atoms. , further improving the passivation effect on the surface of the silicon substrate 1 . After the FGA annealing process, the hydrogen in the silicon nitride in the first anti-reflection layer 3 can further move to the surface of the silicon substrate 1 or even into the body of the silicon substrate 1, thereby improving the passivation effect on the surface of the silicon substrate 1. , the defects in the silicon substrate 1 can also be well passivated. Moreover, the first passivation layer 2 of the above material has weak parasitic absorption of light, and can achieve good chemical passivation and field passivation effects. The first anti-reflection layer 3 of the above material has good anti-reflection effect. Moreover, the material of the first passivation layer 2 can withstand high temperatures, and the preparation process of the first anti-reflection layer 3 is not limited to a high-temperature process, which can further improve the density and uniformity of the first anti-reflection layer 3. Anti-reflection layer 3 has excellent corrosion resistance, further improving the anti-reflection effect.
需要说明的是，对于方法实施例，为了简单描述，故将其都表述为一系列的动作组合，但是本领域技术人员应该知悉，本申请实施例并不受所描述的动作顺序的限制，因为依据本申请实施例，某些步骤可以采用其他 顺序或者同时进行。其次，本领域技术人员也应该知悉，说明书中所描述的实施例均属于优选实施例，所涉及的动作并不一定都是本申请实施例所必须的。It should be noted that for the sake of simple description, the method embodiments are expressed as a series of action combinations. However, those skilled in the art should know that the embodiments of the present application are not limited by the described action sequence, because According to the embodiments of this application, some steps may adopt other sequentially or simultaneously. Secondly, those skilled in the art should also know that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily necessary for the embodiments of the present application.
需要说明的是，在本文中，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者装置不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者装置所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括该要素的过程、方法、物品或者装置中还存在另外的相同要素。It should be noted that, in this document, the terms "comprising", "comprises" or any other variations thereof are intended to cover a non-exclusive inclusion, such that a process, method, article or device that includes a series of elements not only includes those elements, It also includes other elements not expressly listed or inherent in the process, method, article or apparatus. Without further limitation, an element defined by the statement "comprises a..." does not exclude the presence of additional identical elements in a process, method, article or apparatus that includes that element.
上面结合附图对本发明的实施例进行了描述，但是本发明并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，而不是限制性的，本领域的普通技术人员在本发明的启示下，在不脱离本发明宗旨和权利要求所保护的范围情况下，还可做出很多形式，这些均属于本发明的保护之内。 The embodiments of the present invention have been described above in conjunction with the accompanying drawings. However, the present invention is not limited to the above-mentioned specific implementations. The above-mentioned specific implementations are only illustrative and not restrictive. Those of ordinary skill in the art will Under the inspiration of the present invention, many forms can be made without departing from the spirit of the present invention and the scope protected by the claims, and these all fall within the protection of the present invention.

Claims (15)

  1. 一种太阳能电池的制备方法，包括：A method for preparing a solar cell, including:
    在硅基底一侧形成第一钝化层；所述第一钝化层的材料选自：氧化铝，和/或，氧化硅；A first passivation layer is formed on one side of the silicon substrate; the material of the first passivation layer is selected from: aluminum oxide and/or silicon oxide;
    在所述第一钝化层远离所述硅基底的一侧形成第一减反层，所述第一减反层的材料选自：氮化硅、氮氧化硅、氧化硅中的至少一种；其中，所述第一减反层经历过大于或等于300℃的温度。A first antireflection layer is formed on a side of the first passivation layer away from the silicon substrate. The material of the first antireflection layer is selected from at least one of silicon nitride, silicon oxynitride, and silicon oxide. ; Wherein, the first anti-reflection layer has experienced a temperature greater than or equal to 300°C.
  2. 根据权利要求1所述的太阳能电池的制备方法，其中，所述在所述第一钝化层远离所述硅基底的一侧形成第一减反层，包括：The method of manufacturing a solar cell according to claim 1, wherein forming a first antireflection layer on a side of the first passivation layer away from the silicon substrate includes:
    在大于或等于300℃的温度下，在所述第一钝化层远离所述硅基底的一侧沉积所述第一减反层。At a temperature greater than or equal to 300° C., the first antireflection layer is deposited on a side of the first passivation layer away from the silicon substrate.
  3. 根据权利要求1或2所述的太阳能电池的制备方法，其中，所述在所述第一钝化层远离所述硅基底的一侧形成第一减反层之后，所述方法还包括：The method for preparing a solar cell according to claim 1 or 2, wherein after forming the first anti-reflection layer on the side of the first passivation layer away from the silicon substrate, the method further includes:
    对形成有所述第一钝化层、所述第一减反层的硅基底，进行退火；退火温度大于或等于300℃。The silicon substrate on which the first passivation layer and the first anti-reflection layer are formed is annealed; the annealing temperature is greater than or equal to 300°C.
  4. 根据权利要求3所述的太阳能电池的制备方法，其中，所述退火包括：氢气氛围退火，和/或，快速热处理退火。The method of manufacturing a solar cell according to claim 3, wherein the annealing includes: hydrogen atmosphere annealing, and/or rapid thermal treatment annealing.
  5. 根据权利要求1或2所述的太阳能电池的制备方法，其中，所述在硅基底一侧形成第一钝化层，包括：The method for preparing a solar cell according to claim 1 or 2, wherein forming the first passivation layer on one side of the silicon substrate includes:
    在所述硅基底一侧，原子层沉积第一钝化层。On one side of the silicon substrate, a first passivation layer is atomically deposited.
  6. 根据权利要求1或2所述的太阳能电池的制备方法，其中，所述在所述第一钝化层远离所述硅基底的一侧形成第一减反层之后，所述方法还包括：The method for preparing a solar cell according to claim 1 or 2, wherein after forming the first anti-reflection layer on the side of the first passivation layer away from the silicon substrate, the method further includes:
    在所述第一减反层远离所述第一钝化层的一侧形成保护所述第一减反层的掩膜层；Form a mask layer to protect the first anti-reflection layer on the side of the first anti-reflection layer away from the first passivation layer;
    在所述硅基底另一侧形成本征非晶硅钝化层；其中，所述硅基底另一侧和所述硅基底一侧相对分布；An intrinsic amorphous silicon passivation layer is formed on the other side of the silicon substrate; wherein the other side of the silicon substrate and one side of the silicon substrate are relatively distributed;
    在所述本征非晶硅钝化层上形成叉指分布的P型非晶硅层、N型非晶硅层； Form an interdigitated distribution of P-type amorphous silicon layer and N-type amorphous silicon layer on the intrinsic amorphous silicon passivation layer;
    在所述P型非晶硅层上形成透明导电层和第一电极，并在所述N型非晶硅层上形成透明导电层和第二电极。A transparent conductive layer and a first electrode are formed on the P-type amorphous silicon layer, and a transparent conductive layer and a second electrode are formed on the N-type amorphous silicon layer.
  7. 一种太阳能电池，包括：A solar cell including:
    硅基底，以及依次层叠在所述硅基底一侧的第一钝化层、第一减反层；A silicon substrate, and a first passivation layer and a first antireflection layer sequentially stacked on one side of the silicon substrate;
    所述第一钝化层的材料选自：氧化铝，和/或，氧化硅；The material of the first passivation layer is selected from: aluminum oxide and/or silicon oxide;
    所述第一减反层的材料选自：氮化硅、氮氧化硅、氧化硅中的至少一种；所述第一减反层远离所述第一钝化层的表面，在5％浓度的氢氟酸条件下，腐蚀速率为：0.1nm/s至3nm/s。The material of the first anti-reflection layer is selected from: at least one of silicon nitride, silicon oxynitride, and silicon oxide; the surface of the first anti-reflection layer away from the first passivation layer is at a concentration of 5%. Under the condition of hydrofluoric acid, the corrosion rate is: 0.1nm/s to 3nm/s.
  8. 根据权利要求7所述的太阳能电池，其中，所述第一减反层远离所述第一钝化层的表面的反射率小于或等于2％。The solar cell according to claim 7, wherein the reflectance of the surface of the first antireflection layer away from the first passivation layer is less than or equal to 2%.
  9. 根据权利要求7所述的太阳能电池，其中，所述第一减反层为叠层结构；在所述第一减反层中，沿着远离所述硅基底的方向，叠层结构的各层的折射率减小。The solar cell according to claim 7, wherein the first anti-reflection layer is a stacked structure; in the first anti-reflection layer, each layer of the stacked structure is formed in a direction away from the silicon substrate. The refractive index decreases.
  10. 根据权利要求7-9中任一所述的太阳能电池，其中，所述第一钝化层的材料仅选自：氧化铝，所述第一钝化层所带的负电荷的量为1×1011至1×1013。The solar cell according to any one of claims 7 to 9, wherein the material of the first passivation layer is selected from the group consisting of aluminum oxide, and the amount of negative charge carried by the first passivation layer is 1× 10 11 to 1 × 10 13 .
  11. 根据权利要求7-9中任一所述的太阳能电池，其中，所述第一钝化层的厚度为1至20nm；所述厚度所在的方向与所述第一钝化层和所述第一减反层的层叠方向平行；The solar cell according to any one of claims 7-9, wherein the thickness of the first passivation layer is 1 to 20 nm; the direction of the thickness is consistent with the first passivation layer and the first passivation layer. The stacking direction of the anti-reflection layer is parallel;
    或，所述第一减反层厚度为50至150nm。Or, the thickness of the first anti-reflection layer is 50 to 150 nm.
  12. 根据权利要求7-9中任一所述的太阳能电池，其中，所述太阳能电池还包括：位于所述硅基底另一侧的本征非晶硅钝化层，叉指分布在所述本征非晶硅钝化层上的P型非晶硅层、N型非晶硅层，设置在所述P型非晶硅层上的透明导电层和第一电极，以及设置在所述N型非晶硅层上的透明导电层和第二电极；The solar cell according to any one of claims 7 to 9, wherein the solar cell further includes: an intrinsic amorphous silicon passivation layer located on the other side of the silicon substrate, interdigitated distributed on the intrinsic amorphous silicon passivation layer. The P-type amorphous silicon layer and the N-type amorphous silicon layer on the amorphous silicon passivation layer, the transparent conductive layer and the first electrode provided on the P-type amorphous silicon layer, and the N-type amorphous silicon layer. a transparent conductive layer and a second electrode on the crystalline silicon layer;
    其中，所述硅基底另一侧和所述硅基底一侧相对分布。Wherein, the other side of the silicon substrate and one side of the silicon substrate are relatively distributed.
  13. 一种太阳能电池，其中，包括：A solar cell, including:
    硅基底，以及依次层叠在所述硅基底一侧的第一钝化层、第一减反层；A silicon substrate, and a first passivation layer and a first antireflection layer sequentially stacked on one side of the silicon substrate;
    所述第一钝化层的材料选自：氧化铝，和/或，氧化硅；The material of the first passivation layer is selected from: aluminum oxide and/or silicon oxide;
    所述第一减反层的材料选自：氮化硅、氮氧化硅、氧化硅中的至少一种； 所述第一减反层为叠层结构；在所述第一减反层中，沿着远离所述硅基底的方向，叠层结构的各层的折射率减小。The material of the first antireflection layer is selected from: at least one of silicon nitride, silicon oxynitride, and silicon oxide; The first anti-reflection layer has a stacked structure; in the first anti-reflection layer, the refractive index of each layer of the stacked structure decreases in a direction away from the silicon substrate.
  14. 根据权利要求13所述的太阳能电池，其中，所述第一钝化层的材料仅选自：氧化铝，所述第一钝化层所带的负电荷的量为1×1011至1×1013。The solar cell according to claim 13, wherein the material of the first passivation layer is selected from: aluminum oxide, and the amount of negative charge carried by the first passivation layer is 1×10 11 to 1× 10 13 .
  15. 一种光伏组件，包括：至少一个如权利要求7-14中任一项所述的太阳能电池。 A photovoltaic component, comprising: at least one solar cell according to any one of claims 7-14.
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