CN110943146B - Film coating method and manufacturing method of PERC solar cell and PERC solar cell - Google Patents
Film coating method and manufacturing method of PERC solar cell and PERC solar cell Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 27
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 27
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000007888 film coating Substances 0.000 title abstract description 6
- 238000009501 film coating Methods 0.000 title abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000004332 silver Substances 0.000 claims description 13
- 239000002002 slurry Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 238000006116 polymerization reaction Methods 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 2
- 230000002035 prolonged effect Effects 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 17
- 239000010410 layer Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 101100409194 Rattus norvegicus Ppargc1b gene Proteins 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 235000020610 powder formula Nutrition 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a PERC solar cell and a film coating method and a manufacturing method thereof, and belongs to the field of cell manufacturing. The film coating method occurs after texturing, diffusion, etching and glass impurity removal of a silicon wafer and before local grooving of the back surface of the silicon wafer in the preparation process of the PERC solar cell, and is characterized by comprising the following steps: the back ALD is used for preparing the double-sided alumina film, so that the minority carrier service life and the open-circuit voltage of the battery are prolonged, meanwhile, the gradient mirror surface is formed on the back, the internal reflection of long waves is increased, the minority carrier collection of the battery is increased, the short-circuit current is increased, and the conversion efficiency of the battery is further improved.
Description
Technical Field
The invention belongs to the field of battery manufacturing, and particularly relates to a film coating method and a manufacturing method of a PERC solar battery and the PERC solar battery.
Background
The PREC cell core is that the back of a silicon wafer is covered by aluminum oxide and silicon nitride, and because the deposited aluminum oxide passivation layer is thin, the silicon nitride needs to be deposited on the film to play a role in protection, meanwhile, the reflectivity of the back is enhanced to play a role in passivating the surface and improving long-wave response, so that the ISC/UOC is improved, and the conversion efficiency of the cell is improved.
The back passivation equipment used by the single crystal Perc cell is micro-conductive, is obviously wound and plated by a pure water process, and the winding degree of the front side alumina is seriously influenced to degrade the appearance. At present, the conventional PERC battery is limited by material processes, equipment and the like, the efficiency improvement optimization space is narrow, and the efficiency of industrial mass production development for a long time is not greatly improved.
In order to solve the problems, through retrieval, the Chinese application number 201710794936.X, published as 2019, 3, month and 15, discloses a manufacturing method of a double-sided aluminum oxide passivated back surface local contact high-efficiency crystalline silicon solar cell, wherein the front surface is printed: printing silver paste on the front surface, drying at the temperature of 100-300 ℃ for 20-60S, and enabling the aluminum grid lines on the back surface to form good contact. The battery of the patent can avoid the damage of laser grooving to the back, thereby improving the preparation efficiency; however, the relationship between alumina thickness and silver paste is not further disclosed, making the cell performance obtained by this method unclear.
For example, chinese application No. 201910021595.1, published as 2019, 4/19, discloses a front silver paste for preparing PERC silicon solar cell, comprising silver powder 86-90 wt%, glass frit 2-4 wt%, and organic vehicle 8-12 wt%; the silver powder comprises silver oxide powder and two kinds of micron silver powder and nanometer silver powder which are subjected to hydrophobic treatment on the surfaces with different grain diameters. By the optimized design of the silver powder formula, the aluminum oxide layer on the front side can be just corroded without damaging PN junctions, and ohmic contact is realized; also, the relationship between the alumina thickness and the silver paste is not disclosed, and the actual use effect of the electrical conversion efficiency cannot be determined.
For another example, chinese application No. 201910399799.9, published as 2019, 9, and 27, discloses a method for preparing a selective emitter single crystal PERC cell incorporating a tunnel oxide layer, comprising: double-sided texturing; performing single-sided or double-sided oxidation treatment to form silicon oxide; depositing single-sided or double-sided polysilicon and doping phosphorus; printing a mask on the front surface; removing the polysilicon and the silicon oxide outside the mask; removing the mask; doping phosphorus on one side or two sides; etching the back and removing the phosphorosilicate glass; passivating the back surface with aluminum oxide; double-sided PECVD coating; laser film opening is carried out on the back; printing back silver and aluminum paste on the back surface, and printing an electrode on the front surface along the mask position; sintering and performing photoelectric injection to obtain the battery. The tunneling oxide layer is inserted between the emitter and the substrate of the battery, the passivation effect of the front side of the battery piece is enhanced, and the phenomenon that the front side electrode and a silicon wafer directly form ohmic contact to generate great recombination is avoided, so that open-circuit voltage is improved, the relation between the thickness of aluminum oxide and silver paste is not disclosed, and the actual using effect cannot be determined.
Therefore, in order to improve the performance of the PERC solar cell, it is required to improve the manufacturing method and obtain a cell having excellent conversion efficiency performance.
Disclosure of Invention
1. Problems to be solved
Aiming at the problems that the existing PERC-based solar cell manufacturing method does not disclose the relation between the thickness of aluminum oxide and silver paste and cannot determine the actual using effect, the invention provides a PERC solar cell coating method, a manufacturing method and a PERC solar cell, which further improve the photoelectric conversion efficiency of a cell piece and obtain a cell with excellent performance.
2. Technical scheme
In order to solve the problems, the technical scheme adopted by the invention is as follows:
the invention discloses a coating method of a PERC solar cell, which occurs after texturing, diffusing, etching and removing glass impurities of a silicon wafer in the preparation process of the PERC solar cell and before local grooving of the back surface of the silicon wafer, and is characterized by comprising the following steps: preparing a double-sided alumina film by backside ALD, wherein the parameters are as follows:
in a possible embodiment of the present invention, the number of cycles is 26.
The invention also provides a manufacturing method of the PERC solar cell, which comprises the following specific steps:
1) texturing a monocrystalline silicon wafer to form a pyramid textured surface;
2) preparing PN junction by diffusion;
3) polishing the back, etching and removing phosphorosilicate glass;
4) annealing;
5) preparing a double-sided aluminum oxide film by back ALD;
6) depositing a silicon nitride antireflection film by positive film PECVD;
7) depositing five layers of silicon nitride films on the back surface by PECVD;
8) laser local grooving on the back;
9) screen printing to form a back electrode, a back electric field and a positive electrode, and printing positive silver by adopting ozone single-sided polymerization slurry;
10) sintering to make metal and silicon form good ohmic contact;
11) the electrical performance of the cells was tested.
In one possible embodiment of the present invention, the five-layer silicon nitride film is prepared according to the following parameters:
in one possible embodiment of the present invention, the raw material for depositing the silicon nitride on the back five-layer film is NH3And SiH4By adjusting NH3And SiH4Flow ratio control of different refractive index, SiH, of each five-layer film4The flow rate is 800 +/-300 sccm and NH3The flow rate is 6300 +/-800 sccm, the radio frequency power is 13000 +/-3000 KW, the radio frequency opening times are 40 +/-10, the pressure is maintained at 1600 +/-100 mtorr, and the coating time is 170 +/-40 s.
In one possible embodiment of the present invention, the ozone single-sided polymerization slurry is WL 698.
The invention also provides the PERC solar cell obtained by the manufacturing method.
3. Advantageous effects
Compared with the prior art, the invention has the beneficial effects that:
(1) according to the film coating method, through verification of a water process turn window, through comparing the influence of aluminum oxide with different thicknesses on the efficiency of the battery piece, the matching of different slurry and the battery piece with different thicknesses is researched, the photoelectric conversion efficiency of the battery piece is further improved, the matching of double-sided aluminum oxide and single-sided slurry is verified for the first time, and a new direction is expanded for the use of the double-sided aluminum oxide slurry; the photoelectric conversion efficiency of the new matching process is remarkably improved compared with that of the conventional process;
(2) compared with the conventional PERC, the PERC battery processed by the four-layer film process is more beneficial to passivation and back contact, improves the minority carrier lifetime and open-circuit voltage system of the battery, and simultaneously has a gradient mirror surface formed on the back surface to increase the internal reflection of long waves, so that the minority carrier collection of the battery is increased, the short-circuit current is increased, and the conversion efficiency of the battery is improved.
(3) The manufacturing method can realize the preparation of the back film four-layer film on different PECVD deposition equipment, and has simple process steps, stable process and easy control;
(4) the manufacturing method of the invention improves the limitation of the double-sided alumina slurry;
(5) according to the PERC solar cell, the conversion efficiency of the cell is improved by 0.05-0.10%;
(6) the PERC solar cell reduces TMA consumption of single cell pieces and reduces cost; saves a complete process flow time and improves the overall micro-conductive capacity.
Detailed Description
The invention is further described with reference to specific examples.
Example 1
The embodiment selects P-type monocrystalline silicon, and the method for manufacturing the PERC solar cell comprises the following steps:
1. texturing a monocrystalline silicon wafer to form a pyramid textured surface;
2. preparing PN junction by diffusion;
3. polishing the back, etching and removing phosphorosilicate glass;
4. annealing;
5. backside ALD to prepare double-sided alumina; the parameters of the coating method are as follows:
6. depositing a silicon nitride antireflection film by positive film PECVD;
7. depositing a five-layer silicon nitride film on the back by PECVD, wherein the raw material used for depositing the silicon nitride on the five-layer film on the back is NH3And SiH4By adjusting NH in the manufacturing method3And SiH4Flow ratio control of different refractive index, SiH, of each five-layer film4The flow rate is 800 +/-300 sccm and NH3The flow is 6300 +/-800 sccm, the radio frequency power is 13000 +/-3000 KW, the radio frequency opening times are 40 +/-10, the pressure is maintained at 1600 +/-100 mtorr, and the coating time is 170 +/-40 s;
the preparation parameters of the five-layer silicon nitride film are as follows:
8. laser local grooving on the back;
9. screen printing to form a back electrode, a back electric field and a positive electrode;
the front silver printing adopts single-sided silver paste for matching, the experiment takes the matching of the polymerization slurry as an example, specifically, the ozone single-sided polymerization slurry WL698 has the etching-through performance on aluminum oxide, and the matching reduces the thickness of the front aluminum oxide;
10. sintering to make metal and silicon form good ohmic contact;
11. the electrical performance of the cells was tested and four sets of the following experiments were designed.
Experiment 1, micro-conductive different circles matching single-sided polymerized silver paste WL698 (micro-conductive is double-sided water process)
As can be seen from the experimental data, 26 cycles H2The O process has the highest efficiency, which is mainly reflected in the Uoc and the Isc.
Experiment 2, comparing the silver paste matching with 26 micro-conductive rings
As can be seen from the experimental data, the single-sided polymerization slurry WL698 is matched with 26 circles of H2The O process efficiency is about 0.1% higher than that of the production line process, and the advantages of the Uoc and the Isc are obvious.
Experiment 3, precise comparison of single-sided polymerization slurry WL698 with micro-conductive 24/26/28
As can be seen from the experimental data, the single-sided polymerization slurry WL698 is matched with 26 circles of H2The O process efficiency is 0.1 percent higher than that of a production line, and the UOC, the Isc and the FF have advantages.
Compared with a single-layer film single-crystal PERC solar cell with a PECVD (plasma enhanced chemical vapor deposition) back surface, the single-crystal PERC solar cell prepared by the method of the embodiment has the advantages that the short-circuit current is increased, the open-circuit voltage is greatly increased, and the cell conversion efficiency is improved by 0.1%. The above description is a more detailed description of the present invention with reference to specific preferred embodiments, and it is not intended to limit the present invention to the specific embodiments described above. It will be apparent to those skilled in the art that various modifications, additions, substitutions, and the like can be made without departing from the spirit of the invention.
Claims (4)
1. A method for manufacturing a PERC solar cell is characterized by comprising the following specific steps:
1) texturing a monocrystalline silicon wafer to form a pyramid textured surface;
2) preparing PN junction by diffusion;
3) polishing the back, etching and removing phosphorosilicate glass;
4) annealing;
5) preparing a double-sided aluminum oxide film by back ALD; the parameters of the coating method are as follows:
6) depositing a silicon nitride antireflection film by positive film PECVD;
7) depositing five layers of silicon nitride films on the back surface by PECVD;
8) laser local grooving on the back;
9) screen printing to form a back electrode, a back electric field and a positive electrode, and printing positive silver by adopting ozone single-sided polymerization slurry; the ozone single-sided polymerization slurry is WL 698;
10) sintering to make metal and silicon form good ohmic contact;
11) the electrical performance of the cells was tested.
2. The method of claim 1, wherein the five-layer silicon nitride film is prepared with the following parameters:
3. the method of claim 2, wherein the backside five-layer film deposited silicon nitride is deposited using NH as a raw material3And SiH4，SiH4A flow rate of800±300sccm，NH3The flow rate is 6300 +/-800 sccm, the radio frequency power is 13000 +/-3000 KW, the radio frequency opening times are 40 +/-10, the pressure is maintained at 1600 +/-100 mtorr, and the coating time is 170 +/-40 s.
4. A PERC solar cell obtained by the method of any one of claims 1 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911290755.9A CN110943146B (en) | 2019-12-16 | 2019-12-16 | Film coating method and manufacturing method of PERC solar cell and PERC solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911290755.9A CN110943146B (en) | 2019-12-16 | 2019-12-16 | Film coating method and manufacturing method of PERC solar cell and PERC solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN110943146A CN110943146A (en) | 2020-03-31 |
| CN110943146B true CN110943146B (en) | 2021-12-17 |
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| CN107887453B (en) * | 2017-10-10 | 2019-03-15 | 横店集团东磁股份有限公司 | A kind of two-sided aluminium oxide p-type PERC solar battery and production method |
| CN109244149A (en) * | 2018-09-10 | 2019-01-18 | 通威太阳能（合肥）有限公司 | PECVD back film layer structure based on PERC single crystal battery and preparation method |
| CN109244184B (en) * | 2018-09-12 | 2020-10-16 | 江苏顺风新能源科技有限公司 | PERC double-sided battery with double-sided aluminum oxide structure and preparation method thereof |
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