CN117038799A - BC battery preparation method and BC battery - Google Patents
BC battery preparation method and BC battery Download PDFInfo
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- CN117038799A CN117038799A CN202311280698.2A CN202311280698A CN117038799A CN 117038799 A CN117038799 A CN 117038799A CN 202311280698 A CN202311280698 A CN 202311280698A CN 117038799 A CN117038799 A CN 117038799A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 319
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 251
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 250
- 239000010703 silicon Substances 0.000 claims abstract description 250
- 239000000758 substrate Substances 0.000 claims abstract description 185
- 239000001257 hydrogen Substances 0.000 claims abstract description 58
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 58
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000007639 printing Methods 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 110
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 74
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 74
- 238000000151 deposition Methods 0.000 claims description 63
- 229910052757 nitrogen Inorganic materials 0.000 claims description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 45
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 42
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 28
- 239000002253 acid Substances 0.000 claims description 13
- 239000007800 oxidant agent Substances 0.000 claims description 12
- 239000003513 alkali Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 21
- 210000004027 cell Anatomy 0.000 description 27
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 24
- 239000000654 additive Substances 0.000 description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 16
- 239000000243 solution Substances 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 11
- 230000000996 additive effect Effects 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 8
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 8
- 239000003814 drug Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 239000001272 nitrous oxide Substances 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 6
- 230000005641 tunneling Effects 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 239000013585 weight reducing agent Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
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- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- BALXUFOVQVENIU-KXNXZCPBSA-N pseudoephedrine hydrochloride Chemical compound [H+].[Cl-].CN[C@@H](C)[C@@H](O)C1=CC=CC=C1 BALXUFOVQVENIU-KXNXZCPBSA-N 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
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Abstract
The application discloses a BC battery preparation method and a BC battery, belonging to the field of solar batteries, wherein the method comprises the following steps: forming a P region and an N region on the back surface of the silicon substrate; layering a first passivation layer and a second passivation layer on the front surface of the silicon substrate along the thickness direction; the first passivation layer is used for forming hydrogen passivation on the front surface of the silicon substrate; the second passivation layer is used for forming field passivation on the front surface of the silicon substrate; and printing grid lines in the P area and the N area and sintering to manufacture the BC battery. According to the application, the first passivation layer for forming hydrogen passivation and the second passivation layer for forming field passivation are deposited on the front surface of the silicon substrate in a layered manner, so that the passivation layer on the front surface of the silicon substrate can realize the field passivation effect of hydrogen passivation at the same time, thereby improving the passivation level of the front surface of the battery and further improving the efficiency of the battery.
Description
Technical Field
The application relates to the field of solar cells, in particular to a BC (binary code) battery preparation method and a BC battery.
Background
A Back Contact (BC) cell refers to a solar cell in which the emitter electrode and the base electrode of the cell are both located on the Back side of the cell. The existing PERC (Passivated Emitterand Rear Cell, emitter and back passivation cell) and TOPCon (Tunnel Oxide Passivated Contact, tunneling oxide passivation contact) cell surface film structures are not fully suitable for BC cells because the front surface of the BC cell is free of emitter and does not need front metallization, thus eliminating the limitation requirements of metallization on the film structure, but the BC cell has higher requirements on the front surface passivation level because the carrier needs to be guaranteed to have higher service life. However, it is difficult to achieve a high level of passivation effect with conventional processes for depositing a single passivation layer. Therefore, how to raise the passivation level of the front surface of the battery is a technical problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The application aims to provide a BC battery preparation method and a BC battery, so that the passivation level of the front surface of the battery is improved.
In order to achieve the above object, the present application provides a BC battery manufacturing method, comprising:
forming a P region and an N region on the back surface of the silicon substrate;
layering a first passivation layer and a second passivation layer on the front surface of the silicon substrate along the thickness direction; the first passivation layer is used for forming hydrogen passivation on the front surface of the silicon substrate; the second passivation layer is used for forming field passivation on the front surface of the silicon substrate;
and printing grid lines in the P area and the N area and sintering to manufacture the BC battery.
Optionally, layering a first passivation layer and a second passivation layer on the front surface of the silicon substrate along the thickness direction, including:
depositing the first passivation layer on the front surface of the silicon substrate;
depositing a second passivation layer on the surface of the first passivation layer facing away from the silicon substrate;
or, depositing the second passivation layer on the front surface of the silicon substrate;
and depositing the first passivation layer on the surface of the second passivation layer, which faces away from the silicon substrate.
Optionally, layering a first passivation layer and a second passivation layer on the front surface of the silicon substrate along the thickness direction, including:
Alternately layering and depositing a plurality of first passivation layers and a plurality of second passivation layers on the front surface of the silicon substrate along the thickness direction; the first passivation layers and the second passivation layers are alternately layered in the thickness direction.
Optionally, layering a first passivation layer and a second passivation layer on the front surface of the silicon substrate along the thickness direction, including:
depositing the first passivation layer on the front side of the silicon substrate using trimethylaluminum and a hydrogen-containing oxidizing agent; the first passivation layer is an aluminum oxide passivation layer containing hydrogen;
depositing the second passivation layer on the front side of the silicon substrate using trimethylaluminum and a hydrogen-free oxidizing agent; the second passivation layer is an aluminum oxide passivation layer that is free of hydrogen.
Optionally, after the first passivation layer and the second passivation layer are deposited on the front surface of the silicon substrate in a layered manner along the thickness direction, the method further comprises:
and depositing an antireflection film on the front surface of the silicon substrate.
Optionally, depositing an anti-reflection film on the front surface of the silicon substrate comprises:
sequentially depositing three layers of nitrogen-rich silicon nitride films, two layers of silicon oxynitride films and a silicon oxide film on the front surface of the silicon substrate; the three-layer nitrogen-rich silicon nitride film, the two-layer silicon oxynitride film and the silicon oxide film form the anti-reflection film.
Optionally, the three-layer nitrogen-rich silicon nitride film includes a first nitrogen-rich silicon nitride film, a second nitrogen-rich silicon nitride film, and a third nitrogen-rich silicon nitride film; the two layers of silicon oxynitride films comprise a first silicon oxynitride film and a second silicon oxynitride film;
the refractive index of the first nitrogen-rich silicon nitride film is 2.15-2.3, and the first nitrogen-rich silicon nitride film does not contain values of two ends; the refractive index of the second nitrogen-rich silicon nitride film is 2-2.15, and the second nitrogen-rich silicon nitride film does not contain values of two ends; the refractive index of the third nitrogen-rich silicon nitride film is 1.9-2, and the refractive index does not contain values of two ends; the refractive index of the first silicon oxynitride film is 1.8-1.9, and the refractive index does not contain values of two ends; the second silicon oxynitride film has a refractive index of 1.7 to 1.8 and does not contain values at both ends; the refractive index of the silicon oxide film is 1.5 to 1.7, and the value of both ends is not included.
Optionally, before the first passivation layer and the second passivation layer are deposited on the front surface of the silicon substrate in a layered manner along the thickness direction, the method further comprises:
and texturing is carried out on the front surface of the silicon substrate.
Optionally, texturing is performed on the front surface of the silicon substrate, including:
etching the front surface of the silicon substrate by adopting an acid solution, and forming a plurality of pits on the front surface of the silicon substrate;
and adopting alkali solution to texture the front surface of the silicon substrate, and forming texture surfaces in the pits.
To achieve the above object, the present application also provides a BC battery comprising: a silicon substrate; the front surface of the silicon substrate is provided with a first passivation layer and a second passivation layer which are arranged in a layered manner along the thickness direction; the first passivation layer is used for forming hydrogen passivation on the front surface of the silicon substrate; the second passivation layer is used for forming field passivation on the front surface of the silicon substrate; the back surface of the silicon substrate is provided with a P region and an N region; and grid lines are arranged on the P region and the N region.
Optionally, a first passivation layer is arranged on the front surface of the silicon substrate; the surface of the first passivation layer, which faces away from the silicon substrate, is provided with the second passivation layer;
or, the front surface of the silicon substrate is provided with a second passivation layer; the surface of the second passivation layer, which faces away from the silicon substrate, is provided with the first passivation layer.
Optionally, the front surface of the silicon substrate is provided with the first passivation layer and the second passivation layer which are alternately layered along the thickness direction.
Optionally, the first passivation layer is a hydrogen-containing aluminum oxide passivation layer; the second passivation layer is an aluminum oxide passivation layer that is free of hydrogen.
The application provides a preparation method of a BC battery, which comprises the following steps: forming a P region and an N region on the back surface of the silicon substrate; layering a first passivation layer and a second passivation layer on the front surface of the silicon substrate along the thickness direction; the first passivation layer is used for forming hydrogen passivation on the front surface of the silicon substrate; the second passivation layer is used for forming field passivation on the front surface of the silicon substrate; and printing grid lines in the P area and the N area and sintering to manufacture the BC battery.
Obviously, the first passivation layer for forming hydrogen passivation and the second passivation layer for forming field passivation are deposited on the front surface of the silicon substrate in a layered manner, so that the passivation layer on the front surface of the silicon substrate can realize the field passivation effect of hydrogen passivation at the same time, the passivation level of the front surface of the battery is improved, and the efficiency of the battery is further improved. The application also provides the BC battery, which has the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present application, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flowchart of a BC battery preparation method according to an embodiment of the present application;
fig. 2 is a flowchart of another BC battery preparation method according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of a BC battery according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of another BC battery according to an embodiment of the present application;
Fig. 5 is a schematic structural diagram of a textured surface formed on the front surface of a silicon substrate according to an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The back contact cell is a solar cell in which the emitter electrode and the base electrode of the cell are both positioned on the back of the cell. Common BC cells are IBC (Interdigitated Back Contac, inter-digital back contact) cells and TBC cells. IBC cells were first proposed in 1975 by Schwartz and lamert, which were fabricated with P and N regions in interdigitated spaced arrangement on the back of the cell and with metallization contacts and gate lines formed thereon, respectively; the anode and the cathode of the IBC battery are arranged on the back of the battery, and the front of the IBC battery is not shielded by a metal grid line, so that the shielding loss of a metal electrode is avoided, the optical absorption of the battery is greatly improved, and good short-circuit current is realized; IBC cells have reduced front surface recombination losses due to the elimination of front surface emitters. And combining a TOPCon passivation contact technology on the basis of the IBC battery to obtain the TBC battery.
The existing PERC and TOPCon battery surface film layer structure is not completely suitable for the BC battery, because the front surface of the BC battery is free of an emitter and does not need to be subjected to front surface metallization, the limitation requirement of metallization on the film layer structure is eliminated, but the BC battery has higher requirement on the front surface passivation level, and because the carrier needs to be ensured to have higher service life. However, it is difficult to achieve a high level of passivation effect with conventional processes for depositing a single passivation layer. Accordingly, the present application provides a BC battery manufacturing method, which improves the passivation level of the front surface of the battery by depositing a first passivation layer for forming hydrogen passivation and a second passivation layer for forming field passivation on the front surface of a silicon substrate.
Referring to fig. 1, fig. 1 is a flowchart of a BC battery preparation method according to an embodiment of the present application, where the method may include:
s101: and forming a P region and an N region on the back surface of the silicon substrate.
The present embodiment is not limited to a specific kind of silicon substrate, and for example, the silicon substrate may be a P-type monocrystalline silicon wafer; or an N-type monocrystalline silicon wafer. The embodiment is not limited to a specific manner of forming the P region and the N region on the back surface of the silicon substrate, and the specific manner of forming the P region and the N region on the back surface of the silicon substrate may be determined according to a specific type of the silicon substrate and a type of the BC cell actually required to be prepared, for example, when the BC cell to be prepared is a P-type TBC cell, a process of forming the P region and the N region on the back surface of the silicon substrate may include:
Step 1: adopting ozone or sodium hydroxide and hydrogen peroxide to perform pre-cleaning on the P-type monocrystalline silicon piece; then polishing the front and back of the P-type monocrystalline silicon piece by adopting sodium hydroxide and an additive; then cleaning the P-type monocrystalline silicon wafer by adopting ozone or sodium hydroxide and hydrogen peroxide to remove additive residues; then adopting hydrofluoric acid and hydrogen chloride to dehydrate and remove metal ions from the P-type monocrystalline silicon piece, and finally drying;
step 2: preparing an N-type polycrystalline silicon structure on the back surface of a P-type monocrystalline silicon wafer by adopting a low-pressure chemical vapor deposition process in combination with a phosphorus diffusion process, or preparing a tunneling oxide layer on the back surface of the P-type monocrystalline silicon wafer by adopting plasma enhanced chemical vapor deposition equipment to introduce nitrous oxide, introducing phosphine, monosilane, hydrogen or argon for in-situ doping, depositing to form a doped amorphous silicon layer, and finally forming a silicon oxide film by adopting nitrous oxide and monosilane;
and step 3: removing a silicon oxide film in a target P region on the back of the P-type monocrystalline silicon piece by adopting laser equipment to form P region patterning; the silicon oxide film in the target P region can be removed by adopting etching slurry to form P region patterning;
and 4, step 4: removing phosphosilicate glass or silicon oxide which is plated around the front surface of the P-type monocrystalline silicon piece by adopting chain type and groove type equipment, removing a doped amorphous silicon layer and a tunneling oxide layer under the patterning of the back surface P region of the P-type monocrystalline silicon piece by adopting hydrogen oxidation and additives in a groove type machine, and polishing the region;
And step 5: if the procedure 2 adopts a low-pressure chemical vapor deposition process and a phosphorus diffusion process, forming a mask layer on the back surface of the P-type monocrystalline silicon wafer at 700-950 ℃ by adopting annealing equipment in the procedure; if the procedure 2 adopts a plasma enhanced chemical vapor deposition mode, annealing equipment is adopted to carry out annealing crystallization and phosphorus activation on the doped amorphous silicon layer at the temperature of 700-950 ℃ in the procedure, and oxygen is adopted to form silicon oxide on the back surface as a mask layer.
The specific process of forming the P region and the N region on the back surface of the silicon substrate by the P-type TBC cell and the specific process of forming the P region and the N region on the back surface of the silicon substrate by the BC cell of other kinds can refer to the prior art.
Furthermore, in this embodiment, after forming the P region and the N region on the back surface of the silicon substrate, a passivation layer and a passivation internal reflection film may be sequentially deposited on the back surface of the silicon substrate, so as to achieve a passivation effect and an internal reflection effect.
The embodiment is not limited to the specific type of passivation layer, and may be, for example, a first passivation layer or a second passivation layer; alternatively, the first passivation layer and the second passivation layer may be alternately layered in the thickness direction. The embodiment is not limited to a specific manner of depositing the passivation layer, and the specific manner of depositing the passivation layer may be determined according to a specific type of the passivation layer, and the specific manner of depositing the first passivation layer or the second passivation layer may be referred to hereinafter, which is not described herein.
Further, in order to achieve optimal internal reflection and hydrogen passivation, in this embodiment, three layers of silicon nitride films, two layers of silicon oxynitride films and a silicon oxide film may be sequentially deposited on the back surface of the silicon substrate; the three silicon nitride films, the two silicon oxynitride films and the silicon oxide film form a passivation internal reflection film. The present embodiment is not limited to a specific value of the refractive index of each layer of the passivated internal reflection film, but it is necessary to ensure that the refractive index of each layer of the passivated internal reflection film decreases sequentially from the inside to the outside. In this embodiment, the specific manner of depositing the three silicon nitride films is not limited as long as the three silicon nitride films can be formed, and for example, monosilane and ammonia gas may be used to sequentially deposit the three silicon nitride films on the front surface of the silicon substrate. In this embodiment, the specific apparatus for depositing the three silicon nitride films is not limited, as long as it is ensured that the three silicon nitride films can be formed, and for example, the three silicon nitride films may be sequentially deposited on the front surface of the silicon substrate by using a plasma enhanced chemical vapor deposition apparatus. In this embodiment, the specific manner of depositing the two silicon oxynitride films is not limited as long as the two silicon oxynitride films can be formed, and for example, monosilane, ammonia gas, and nitrous oxide may be used to sequentially deposit the two silicon oxynitride films on the front surface of the silicon substrate. In this embodiment, the specific apparatus for depositing the two silicon oxynitride films is not limited, as long as the two silicon oxynitride films can be formed, and for example, the two silicon oxynitride films may be sequentially deposited on the front surface of the silicon substrate by using a plasma enhanced chemical vapor deposition apparatus. The specific manner of depositing the silicon oxide film is not limited in this embodiment, as long as the silicon oxide film can be formed, and for example, monosilane and nitrous oxide may be used to deposit the silicon oxide film on the front surface of the silicon substrate. The specific apparatus for depositing the silicon oxide film is not limited in this embodiment, as long as the silicon oxide film can be formed, and for example, the silicon oxide film can be deposited on the front surface of the silicon substrate by using a plasma enhanced chemical vapor deposition apparatus.
S102: layering a first passivation layer and a second passivation layer on the front surface of the silicon substrate along the thickness direction; the first passivation layer is used for forming hydrogen passivation on the front surface of the silicon substrate; the second passivation layer is used for forming field passivation on the front surface of the silicon substrate.
The present embodiment is not limited to a specific kind of the first passivation layer as long as it is ensured that hydrogen passivation can be formed on the front surface of the silicon substrate, for example, the first passivation layer may be a hydrogen-containing aluminum oxide passivation layer. The present embodiment is not limited to a specific kind of the second passivation layer as long as it is ensured that field passivation can be formed on the front surface of the silicon substrate, for example, the second passivation layer may be an aluminum oxide passivation layer containing no hydrogen.
The embodiment is not limited to the specific manner of depositing the first passivation layer, and the specific manner of depositing the first passivation layer may be determined according to the specific kind of the first passivation layer, for example, when the first passivation layer is a hydrogen-containing aluminum oxide passivation layer, trimethylaluminum and a hydrogen-containing oxidizing agent may be used to deposit the first passivation layer on the front surface of the silicon substrate. The present embodiment is not limited to a specific kind of the hydrogen-containing oxidizing agent as long as it is ensured that the hydrogen-containing aluminum oxide passivation layer can be formed, and for example, the hydrogen-containing oxidizing agent may be water. The embodiment is not limited to a specific apparatus for depositing the hydrogen-containing aluminum oxide passivation layer, as long as the hydrogen-containing aluminum oxide passivation layer can be formed on the surface of the silicon substrate, and for example, the hydrogen-containing aluminum oxide passivation layer can be deposited on the front surface of the silicon substrate by using a plate-type or tube-type atomic layer deposition apparatus.
The embodiment is not limited to the specific manner of depositing the second passivation layer, and the specific manner of depositing the second passivation layer may be determined according to the specific kind of the second passivation layer, for example, when the second passivation layer is an aluminum oxide passivation layer containing no hydrogen, trimethylaluminum and an oxidizer containing no hydrogen may be used to deposit the second passivation layer on the front surface of the silicon substrate. The present embodiment is not limited to a specific kind of the oxidizer containing no hydrogen, as long as it is ensured that the passivation layer of aluminum oxide containing no hydrogen can be formed, and for example, the oxidizer containing no hydrogen may be ozone. The embodiment is not limited to a specific apparatus for depositing the passivation layer of aluminum oxide containing no hydrogen, as long as the passivation layer of aluminum oxide containing no hydrogen can be formed on the surface of the silicon substrate, for example, an atomic layer deposition apparatus may be used to deposit the passivation layer of aluminum oxide containing no hydrogen on the front surface of the silicon substrate. The specific thickness of the deposited aluminum oxide passivation layer (the aluminum oxide passivation layer includes a hydrogen-containing aluminum oxide passivation layer and a hydrogen-free aluminum oxide passivation layer) is not limited in this embodiment, and may be determined according to practical situations, for example, the thickness of the aluminum oxide passivation layer may be 5nm to 30nm.
In this embodiment, each passivation layer is deposited layer by layer on the front surface of the silicon substrate in the thickness direction. The specific number of the first passivation layer and the second passivation layer deposited is not limited, and for example, a first passivation layer and a second passivation layer may be deposited on the front surface of the silicon substrate in a layered manner along the thickness direction; alternatively, a plurality of first passivation layers and a plurality of second passivation layers may be deposited on the front surface of the silicon substrate in a layered manner in the thickness direction; the first passivation layer and the second passivation layer are alternately layered in the thickness direction.
When a first passivation layer and a second passivation layer are deposited on the front surface of the silicon substrate in a layered manner along the thickness direction, the specific order of depositing the first passivation layer and the second passivation layer is not limited in this embodiment, and for example, the first passivation layer may be deposited first and then the second passivation layer may be deposited, that is, the first passivation layer may be deposited on the front surface of the silicon substrate; depositing a second passivation layer on the surface of the first passivation layer facing away from the silicon substrate; or the second passivation layer is deposited firstly and then the first passivation layer is deposited, namely the second passivation layer is deposited on the front surface of the silicon substrate; and depositing a first passivation layer on the surface of the second passivation layer facing away from the silicon substrate.
Alternately depositing a plurality of first passivation layers and a plurality of second passivation layers in a thickness direction on the front surface of the silicon substrate; when the first passivation layer and the second passivation layer are alternately layered along the thickness direction, the specific order of depositing the first passivation layer and the second passivation layer is not limited in this embodiment, for example, the first passivation layer is deposited first and then the second passivation layer is deposited, that is, the first layer deposited on the front surface of the silicon substrate is the first passivation layer; it is also possible to deposit the second passivation layer first and then the first passivation layer, i.e. the first layer deposited on the front side of the silicon substrate is the second passivation layer.
Furthermore, in order to improve the light trapping effect, in this embodiment, before the first passivation layer and the second passivation layer are deposited on the front surface of the silicon substrate in a layered manner along the thickness direction, texturing may also be performed on the front surface of the silicon substrate. The embodiment is not limited to a specific manner of performing the texturing, and only needs to ensure that the texturing can be formed on the front surface of the silicon substrate, for example, the front surface of the silicon substrate may be etched by using an acid solution, and a plurality of pits are formed on the front surface of the silicon substrate; adopting alkali solution to texture the front surface of the silicon substrate, and forming texture in the pits; or etching the front surface of the silicon substrate by using laser equipment to form a plurality of pits on the front surface of the silicon substrate; and (3) texturing the front surface of the silicon substrate by adopting alkali solution to form a textured surface in the pit. It should be noted that, in this embodiment, a special acid etching (or laser grooving) and alkali texturing process are adopted to match, so that an optimal suede structure can be realized, and the light trapping effect is significantly improved.
The present embodiment is not limited to a specific kind of the acid solution as long as it is ensured that a plurality of pits can be formed on the front surface of the silicon substrate, and for example, the acid solution may include nitrous acid, hydrofluoric acid, sulfuric acid, and additives. The present embodiment is not limited to the specific proportions of the nitrous acid, hydrofluoric acid, sulfuric acid and additives, and the specific proportions of the nitrous acid, hydrofluoric acid, sulfuric acid and additives may be determined according to actual conditions. The present embodiment is not limited to a specific kind of alkali solution as long as it is ensured that pile surfaces can be formed in the pits, for example, the alkali solution may include sodium hydroxide and additives.
Further, in this embodiment, after etching the front surface of the silicon substrate with an acid solution and forming a plurality of pits on the front surface of the silicon substrate, or texturing the front surface of the silicon substrate with an alkali solution, after forming a textured surface in the pits, ozone water may be used to clean the silicon substrate to remove the residual additives. In addition, a mask can be deposited on the back surface of the silicon substrate in the process of texturing the front surface of the silicon substrate, so that after the residual additive is removed by adopting ozone water, the mask on the back surface of the silicon substrate can be removed by adopting hydrofluoric acid. Further, in order to remove the organic matters remained on the surface of the silicon substrate, in this embodiment, after the mask on the back surface of the silicon substrate is removed by using hydrofluoric acid, the silicon substrate may be cleaned by using ozone water. The present embodiment is not limited to the specific concentration of the ozone water, and the specific concentration of the ozone water may be determined according to actual conditions, for example, the concentration of the ozone water may be 20% or more. Further, in this embodiment, after the silicon substrate is cleaned with ozone water, the front surface of the silicon substrate may be dehydrated and metal ions may be removed with hydrofluoric acid and hydrogen chloride.
Further, in order to improve the light trapping effect, in this embodiment, after the first passivation layer and the second passivation layer are deposited on the front surface of the silicon substrate in a layered manner along the thickness direction, an anti-reflection film may also be deposited on the front surface of the silicon substrate. Further, in order to reduce the reflectivity of the front surface of the battery, in this embodiment, three layers of nitrogen-rich silicon nitride films, two layers of silicon oxynitride films and a silicon oxide film may be sequentially deposited on the front surface of the silicon substrate; the three layers of nitrogen-rich silicon nitride films, the two layers of silicon oxynitride films and the silicon oxide film form an antireflection film. It should be noted that, only a single passivation layer is deposited on the front surface of the conventional BC battery, so that the passivation effect is weak, so that a layer of silicon-rich passivation anti-reflection film with high refractive index is generally deposited on the surface of the passivation layer, and a certain passivation effect is achieved, but the passivation anti-reflection film has a weak anti-reflection effect due to a high silicon-rich refractive index. In the embodiment, the passivation effect of the passivation layer is higher, and the anti-reflection film does not need to consider improving the passivation effect, so that the refractive index of each layer of film in the anti-reflection film is reduced by depositing the nitrogen-rich anti-reflection film, the reflectivity of the front surface of the battery can be reduced, and the light trapping effect is improved; meanwhile, the refractive index of each layer of film in the anti-reflection film is reduced, and parasitic absorption of the anti-reflection film can be reduced, so that short-circuit current is improved.
The three-layer nitrogen-rich silicon nitride film in this embodiment includes a first nitrogen-rich silicon nitride film, a second nitrogen-rich silicon nitride film, and a third nitrogen-rich silicon nitride film; the two silicon oxynitride films include a first silicon oxynitride film and a second silicon oxynitride film. The specific values of the refractive indexes of the layers in the antireflection film are not limited, and can be determined according to the actual required refractive index, but the refractive indexes of the layers in the antireflection film need to be reduced sequentially from inside to outside, for example, the refractive index of the first nitrogen-rich silicon nitride film can be 2.15-2.3, and the refractive index does not contain the values of the two ends; the second nitrogen-rich silicon nitride film may have a refractive index of 2 to 2.15 and does not include values of both ends; the refractive index of the third nitrogen-rich silicon nitride film may be 1.9 to 2, and does not include values of both ends; the first silicon oxynitride film may have a refractive index of 1.8 to 1.9 and does not include values of both ends; the second silicon oxynitride film may have a refractive index of 1.7 to 1.8 and does not include values of both ends; the refractive index of the silicon oxide film may be 1.5 to 1.7, and does not include values of both ends.
The specific values of the thicknesses of the layers in the anti-reflection film are not limited, and may be determined according to practical situations, for example, the thickness of the first nitrogen-rich silicon nitride film may be 2nm-10nm and include values of both ends; the second nitrogen-rich silicon nitride film may have a thickness of 2nm to 10nm and include values of both ends; the thickness of the third nitrogen-rich silicon nitride film may be 10nm to 30nm and include values of both ends; the thickness of the first silicon oxynitride film may be 10nm to 20nm, and does not include values of both ends; the second silicon oxynitride film may have a thickness of 10nm to 20nm and contains values of both ends; the thickness of the silicon oxide film may be 10nm to 20nm and include values of both ends.
In this embodiment, the specific manner of depositing the three nitrogen-rich silicon nitride films is not limited, as long as the three nitrogen-rich silicon nitride films can be formed, and for example, monosilane and ammonia gas may be used to sequentially deposit the three nitrogen-rich silicon nitride films on the front surface of the silicon substrate. In this embodiment, the specific apparatus for depositing the three nitrogen-rich silicon nitride films is not limited, as long as it is ensured that the three nitrogen-rich silicon nitride films can be formed, for example, the three nitrogen-rich silicon nitride films can be sequentially deposited on the front surface of the silicon substrate by using a plasma enhanced chemical vapor deposition apparatus. In this embodiment, the specific manner of depositing the two silicon oxynitride films is not limited as long as the two silicon oxynitride films can be formed, and for example, monosilane, ammonia gas, and nitrous oxide may be used to sequentially deposit the two silicon oxynitride films on the front surface of the silicon substrate. In this embodiment, the specific apparatus for depositing the two silicon oxynitride films is not limited, as long as the two silicon oxynitride films can be formed, and for example, the two silicon oxynitride films may be sequentially deposited on the front surface of the silicon substrate by using a plasma enhanced chemical vapor deposition apparatus. The specific manner of depositing the silicon oxide film is not limited in this embodiment, as long as the silicon oxide film can be formed, and for example, monosilane and nitrous oxide may be used to deposit the silicon oxide film on the front surface of the silicon substrate. The specific apparatus for depositing the silicon oxide film is not limited in this embodiment, as long as the silicon oxide film can be formed, and for example, the silicon oxide film can be deposited on the front surface of the silicon substrate by using a plasma enhanced chemical vapor deposition apparatus.
S103: and printing grid lines in the P area and the N area and sintering to manufacture the BC battery.
The embodiment is not limited to the specific manner of printing the gate lines in the P region and the N region, and reference may be made to the prior art, for example, printing the main gate line and the fine gate line in the N region by screen printing, and printing the main gate line and the fine gate line in the P region by screen printing.
Based on the embodiment, the first passivation layer for forming hydrogen passivation and the second passivation layer for forming field passivation are deposited on the front surface of the silicon substrate in a layered manner, so that the passivation layer on the front surface of the silicon substrate can realize the field passivation effect of hydrogen passivation at the same time, the passivation level of the front surface of the battery is improved, and the efficiency of the battery is further improved.
Referring to fig. 2, fig. 2 is a flowchart of another BC battery preparation method according to an embodiment of the present application, which may include:
s201: forming a P region and an N region on the back surface of the silicon substrate;
s202: etching the front surface of the silicon substrate by adopting an acid solution, and forming a plurality of pits on the front surface of the silicon substrate;
s203: adopting alkali solution to texture the front surface of the silicon substrate, and forming texture in the pits;
s204: alternately layering and depositing a plurality of first passivation layers and a plurality of second passivation layers on the front surface of the silicon substrate along the thickness direction; the first passivation layer is used for forming hydrogen passivation on the front surface of the silicon substrate; the second passivation layer is used for forming field passivation on the front surface of the silicon substrate; the first passivation layers and the second passivation layers are alternately layered along the thickness direction;
S205: sequentially depositing three layers of nitrogen-rich silicon nitride films, two layers of silicon oxynitride films and a silicon oxide film on the front surface of the silicon substrate; the three layers of nitrogen-rich silicon nitride films, the two layers of silicon oxynitride films and the silicon oxide film form an antireflection film;
s206: and printing grid lines in the P area and the N area and sintering to manufacture the BC battery.
Based on the embodiment, the application adopts special acid etching and alkali texturing process collocation to realize the optimal suede structure, so that the light trapping effect is obviously improved; a plurality of first passivation layers used for forming hydrogen passivation and a plurality of second passivation layers used for forming field passivation are alternately deposited on the front surface of the silicon substrate in a layering mode, so that the passivation layers on the front surface of the silicon substrate can achieve the field passivation effect of the hydrogen passivation at the same time, the passivation level of the front surface of the battery is improved, and the efficiency of the battery is further improved; through the optimization of the refractive index of the antireflection film, the parasitic absorption of the antireflection film is reduced, and the light trapping effect is improved.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a BC battery according to an embodiment of the present application, where the BC battery may include: a silicon substrate; the front surface of the silicon substrate is provided with a first passivation layer and a second passivation layer which are arranged in a layered manner along the thickness direction; the first passivation layer is used for forming hydrogen passivation on the front surface of the silicon substrate; the second passivation layer is used for forming field passivation on the front surface of the silicon substrate;
The back of the silicon substrate is provided with a P region and an N region; and grid lines are arranged on the P region and the N region.
The present embodiment is not limited to a specific kind of the first passivation layer as long as it is ensured that hydrogen passivation can be formed on the front surface of the silicon substrate, for example, the first passivation layer may be a hydrogen-containing aluminum oxide passivation layer. The present embodiment is not limited to a specific kind of the second passivation layer as long as it is ensured that field passivation can be formed on the front surface of the silicon substrate, for example, the second passivation layer may be an aluminum oxide passivation layer containing no hydrogen.
In this embodiment, each passivation layer covers the entire front surface of the silicon substrate in the thickness direction. The present embodiment is not limited to a specific number of the first passivation layers and the second passivation layers, and for example, the front surface of the silicon substrate may be provided with one first passivation layer and one second passivation layer that are layered in the thickness direction; it is also possible that the front surface of the silicon substrate is provided with first passivation layers and second passivation layers alternately layered in the thickness direction, as shown in fig. 4.
When the front surface of the silicon substrate is provided with a first passivation layer and a second passivation layer which are arranged in layers along the thickness direction, the embodiment is not limited to a specific arrangement manner of the first passivation layer and the second passivation layer, for example, the front surface of the silicon substrate may be provided with the first passivation layer; the surface of the first passivation layer, which is away from the silicon substrate, is provided with a second passivation layer; the front surface of the silicon substrate can be provided with a second passivation layer; the surface of the second passivation layer facing away from the silicon substrate is provided with a first passivation layer.
When the front surface of the silicon substrate is provided with the first passivation layer and the second passivation layer which are alternately layered and arranged along the thickness direction, the embodiment is not limited to a specific arrangement manner of the first passivation layer and the second passivation layer, and for example, the first layer arranged on the front surface of the silicon substrate may be the first passivation layer; the first layer, which may also be provided on the front side of the silicon substrate, is a second passivation layer.
Based on the embodiment, the first passivation layer for forming hydrogen passivation and the second passivation layer for forming field passivation are arranged on the front surface of the silicon substrate in a layered manner, so that the passivation layer on the front surface of the silicon substrate can realize the field passivation effect of hydrogen passivation at the same time, the passivation level of the front surface of the battery is improved, and the efficiency of the battery is further improved.
The BC battery preparation process described above is described below in connection with specific examples, which are specifically as follows:
1. adopts P-type monocrystalline silicon slice and O in the groove body 3 (ozone) +HCL (hydrogen chloride) +H 2 O (water) is used for cleaning before the silicon wafer; then NaOH (sodium hydroxide) +additive 1 (Tuobang added TC 10) +H is used 2 Alkali polishing is carried out on the O (water) liquid medicine tank body; then adopt O 3 +HCL+H 2 The O liquid medicine tank body is cleaned to remove additive residues; finally, HCl+HF (hydrofluoric acid) +H is adopted 2 Removing residual metal ions from the O liquid medicine tank body; a water tank is arranged in the middle of each tank body, the residual liquid medicine of the silicon wafer after passing through the last tank body is cleaned, and finally, the silicon wafer is dried, and when the 182-size silicon wafer is adopted, the weight reduction is controlled to be about 0.2g-0.8 g;
2. growing SiO on the back surface by adopting a PECVD (Plasma Enhanced Chemical Vapor Deposition) mode and a plasma enhanced chemical vapor deposition mode 2 A (silicon dioxide) tunneling oxide layer, which adopts N 2 The flow rate of O (nitrous oxide) gas is 10sLm, the temperature is controlled between 350 ℃ and 450 ℃, the pressure is controlled between 100Pa and 400Pa, and the power is set between 6kW and 1.2 kW; after the tunneling oxide layer is deposited, P doped amorphous silicon is continuously deposited, the temperature is controlled at 380 ℃ to 450 ℃, the pressure is controlled between 100Pa and 400Pa, and SiH is adopted 4 (monosilane): PH value 3 (phosphine): h 2 (hydrogen) controlling the flow ratio between 3:1:10 and 6:1:15 for 100s-200s of lightly doped amorphous silicon deposition; with subsequent SiH use 4 ：PH 3 ：H 2 The flow ratio is controlled between 0.5:1:6 and 1.5:1:2, and the heavily doped amorphous silicon deposition is carried out for 400s to 800 s; lightly doped and heavily dopedAfter the deposition of the impurity amorphous silicon, N is adopted 2 O：SiH 4 The flow rate ratio is controlled between 10 and 20, and 100s to 300s of silicon oxide is deposited;
3. Carrying out laser etching on the back surface of the silicon oxide film according to a set pattern by adopting laser etching equipment to form a pattern;
4. adopting chain type and groove type equipment, and removing PSG (Phospho Silicate Glass ) or SiOx (silicon oxide) on the front surface by using HF acid of a chain type machine table in a winding manner; removing doped amorphous silicon and a tunneling oxide layer under the patterning of the back P region by using a groove type machine NaOH and an additive 2 (Torpedo PI 10V) and polishing the region; the polishing depth of the P region is controlled to be 1-4 mu m, so that the P region and the N region are isolated; then adopt O 3 +HCl+H 2 The O liquid medicine tank body is cleaned to remove additive residues; a water tank is arranged in the middle of each tank body, the residual liquid medicine of the silicon wafer after passing through the last tank body is cleaned, and finally, the silicon wafer is dried, and when the 182-size silicon wafer is adopted, the weight reduction is controlled to be about 0.01g-0.03 g;
5. adopting a tubular annealing furnace to perform phosphorus activation and amorphous silicon crystallization for 1000-3000 s, and controlling the temperature to be 800-950 ℃; then carrying out oxidation at 800-950 ℃ by introducing oxygen to carry out cooling oxidation for 1000-3000 s to generate a silicon oxide film layer;
6. the front side adopts chain acid etching equipment, and the liquid medicine adopts HNO (nitrous acid) +HF+H 2 SO 4 (sulfuric acid) +additive 3 acid etching the front surface to form tens of thousands of semicircular pits (this step of acid etching can also be performed using a laser apparatus), wherein HNO: HF: h 2 SO 4 : the proportion of additive 3 is controlled at 1:1:1:0.1-1:5:5: 1; by high concentration O 3 The semicircular pits are efficiently cleaned by water (the concentration is more than or equal to 20 percent); then adopting NaOH and an additive 4 (Tuobang V10) to carry out front texturing on tens of thousands of semicircular pits on the front to form pyramid morphology, wherein the pyramid shape is positioned at the bottom or the side wall of the semicircular pits, as shown in figure 5; then adopt O 3 Water (the concentration is more than or equal to 20 percent) is used for cleaning and removing additive residues; removing the back mask by adopting HF; reuse of high concentration O 3 High-efficiency cleaning with water (concentration not less than 20%) and reusingRemoving metal ions from HF and HCL, ensuring surface hydrophobicity, and finally drying; when the 182-size silicon wafer is adopted, the weight reduction is controlled to be about 0.1g-0.5 g;
7. ALD (Atomic Layer Deposition) apparatus for depositing Al on front and back surfaces of cells using TMA (trimethylaluminum) and an oxidizing agent 2 O 3 A passivation layer of (aluminum oxide); wherein the front surface Al 2 O 3 Oxidizing agent O during growth 3 /H 2 O is alternately introduced, and the growth thickness is controlled to be 5nm-30nm, so that excellent H (hydrogen) passivation and field passivation effects are realized;
8. PECVD machine for manufacturing and using SiH on front face 4 And NH 3 (Ammonia gas) preparing a first layer of nitrogen-rich silicon nitride film, wherein the refractive index of the first layer of nitrogen-rich silicon nitride film is about 2.15-2.3, and the thickness of the first layer of nitrogen-rich silicon nitride film is controlled to be about 2-10 nm; on the first layer of nitrogen-rich silicon nitride film, siH is used 4 And NH 3 Preparing a second nitrogen-rich silicon nitride film by using the two special gases, wherein the refractive index of the second nitrogen-rich silicon nitride film is about 2.15-2.0, and the thickness of the second nitrogen-rich silicon nitride film is controlled to be about 2-10 nm; on the second layer of nitrogen-rich silicon nitride film, siH is used 4 And NH 3 Preparing a third nitrogen-rich silicon nitride film by using the two special gases, wherein the refractive index of the third nitrogen-rich silicon nitride film is about 2.0-1.9, and the thickness of the third nitrogen-rich silicon nitride film is controlled to be about 10-30 nm; on the third layer of nitrogen-rich silicon nitride film, siH is used 4 、NH 3 And N 2 O three special gases deposit a fourth layer of silicon oxynitride film, the refractive index of the fourth layer of silicon oxynitride film is about 1.8-1.9, and the thickness of the fourth layer of silicon oxynitride film is controlled to be about 10-20 nm; on top of the fourth silicon oxynitride film, siH is used 4 、NH 3 And N 2 O is used for depositing a fifth layer of silicon oxynitride film by three types of special gases, the refractive index of the fifth layer of silicon oxynitride film is about 1.8-1.7, and the thickness of the silicon oxynitride film is controlled to be 10-20 nm; on the fifth layer silicon oxynitride film, siH is used 4 And N 2 Depositing a sixth silicon oxide film by O special gas, wherein the refractive index of the sixth silicon oxide film is about 1.5-1.7, and the thickness of the sixth silicon oxide film is controlled to be 10-20 nm;
9. SiH utilization at the backside using PECVD tool 4 And NH 3 Preparing a first silicon nitride film by two special gases, wherein the refractive index of the first silicon nitride film is about 2.3-2.2, and the thickness of the first silicon nitride film is controlled to be about 10-20 nm; on the first silicon nitride film, siH is used 4 And NH 3 Preparing a second silicon nitride film by using the two special gases, wherein the refractive index of the second silicon nitride film is about 2.2-2.1, and the thickness of the second silicon nitride film is controlled to be about 15-30 nm; on the second silicon nitride film, siH is used 4 And NH 3 Preparing a third layer of silicon nitride film by using the two special gases, wherein the refractive index of the third layer of silicon nitride film is about 2.1-2.0, and the thickness of the third layer of silicon nitride film is controlled to be about 20-35 nm; on the third layer of silicon nitride film, siH is used 4 、NH 3 And N 2 O three special gases deposit a fourth layer of silicon oxynitride film, the refractive index of the fourth layer of silicon oxynitride film is about 2.0-1.9, and the thickness of the fourth layer of silicon oxynitride film is controlled to be about 8-15 nm; on top of the fourth silicon oxynitride film, siH is used 4 、NH 3 And N 2 O is used for depositing a fifth layer of silicon oxynitride film by three types of special gases, the refractive index of the fifth layer of silicon oxynitride film is about 1.9-1.7, and the thickness of the fifth layer of silicon oxynitride film is controlled to be 6-15 nm; on the fifth layer silicon oxynitride film, siH is used 4 And N 2 Depositing a sixth silicon oxide film by O special gas, wherein the refractive index of the sixth silicon oxide film is about 1.65-1.50, and the thickness of the sixth silicon oxide film is controlled to be 5-15 nm;
10. a laser device is adopted to open holes on the passivation film in the P area of the back surface so as to facilitate the contact of the metal at the back surface;
11. performing a battery back metallization process, namely printing an N-region main grid and a fine grid on the back of the battery; printing a main grid and a fine grid of the P region and sintering;
12. passivating by light injection H, and performing light injection treatment under the conditions of 1-20 solar light intensities and 300-600 ℃;
13. and (5) preparing the battery piece and testing the electrical property.
The principles and embodiments of the present application are described herein with reference to specific examples, where each example is a progressive relationship, and each example is mainly described by differences from other examples, and identical and similar parts of each example are mutually referred to. The above description of the embodiments is only for aiding in the understanding of the method of the present application and its core ideas. It will be apparent to those skilled in the art that various changes and modifications can be made to the present application without departing from the principles of the application, and such changes and modifications fall within the scope of the appended claims.
It should also be noted that in this specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
Claims (13)
1. A method of preparing a BC battery, comprising:
forming a P region and an N region on the back surface of the silicon substrate;
layering a first passivation layer and a second passivation layer on the front surface of the silicon substrate along the thickness direction; the first passivation layer is used for forming hydrogen passivation on the front surface of the silicon substrate; the second passivation layer is used for forming field passivation on the front surface of the silicon substrate;
And printing grid lines in the P area and the N area and sintering to manufacture the BC battery.
2. The BC battery preparation method according to claim 1, wherein layering a first passivation layer and a second passivation layer on the front surface of the silicon substrate in the thickness direction, comprises:
depositing the first passivation layer on the front surface of the silicon substrate;
depositing a second passivation layer on the surface of the first passivation layer facing away from the silicon substrate;
or, depositing the second passivation layer on the front surface of the silicon substrate;
and depositing the first passivation layer on the surface of the second passivation layer, which faces away from the silicon substrate.
3. The BC battery preparation method according to claim 1, wherein layering a first passivation layer and a second passivation layer on the front surface of the silicon substrate in the thickness direction, comprises:
alternately layering and depositing a plurality of first passivation layers and a plurality of second passivation layers on the front surface of the silicon substrate along the thickness direction; the first passivation layers and the second passivation layers are alternately layered in the thickness direction.
4. The BC battery preparation method according to claim 1, wherein layering a first passivation layer and a second passivation layer on the front surface of the silicon substrate in the thickness direction, comprises:
Depositing the first passivation layer on the front side of the silicon substrate using trimethylaluminum and a hydrogen-containing oxidizing agent; the first passivation layer is an aluminum oxide passivation layer containing hydrogen;
depositing the second passivation layer on the front side of the silicon substrate using trimethylaluminum and a hydrogen-free oxidizing agent; the second passivation layer is an aluminum oxide passivation layer that is free of hydrogen.
5. The BC battery preparation method according to claim 1, wherein after the layered deposition of the first passivation layer and the second passivation layer in the thickness direction on the front surface of the silicon substrate, further comprising:
and depositing an antireflection film on the front surface of the silicon substrate.
6. The BC battery preparation method according to claim 5, wherein depositing an anti-reflection film on the front surface of the silicon substrate comprises:
sequentially depositing three layers of nitrogen-rich silicon nitride films, two layers of silicon oxynitride films and a silicon oxide film on the front surface of the silicon substrate; the three-layer nitrogen-rich silicon nitride film, the two-layer silicon oxynitride film and the silicon oxide film form the anti-reflection film.
7. The BC battery preparation method according to claim 6, wherein the three-layer nitrogen-rich silicon nitride film comprises a first nitrogen-rich silicon nitride film, a second nitrogen-rich silicon nitride film and a third nitrogen-rich silicon nitride film; the two layers of silicon oxynitride films comprise a first silicon oxynitride film and a second silicon oxynitride film;
The refractive index of the first nitrogen-rich silicon nitride film is 2.15-2.3, and the first nitrogen-rich silicon nitride film does not contain values of two ends; the refractive index of the second nitrogen-rich silicon nitride film is 2-2.15, and the second nitrogen-rich silicon nitride film does not contain values of two ends; the refractive index of the third nitrogen-rich silicon nitride film is 1.9-2, and the refractive index does not contain values of two ends; the refractive index of the first silicon oxynitride film is 1.8-1.9, and the refractive index does not contain values of two ends; the second silicon oxynitride film has a refractive index of 1.7 to 1.8 and does not contain values at both ends; the refractive index of the silicon oxide film is 1.5 to 1.7, and the value of both ends is not included.
8. The BC battery preparation method according to claim 1, wherein before the deposition of the first passivation layer and the second passivation layer on the front surface of the silicon substrate in layers in the thickness direction, further comprising:
and texturing is carried out on the front surface of the silicon substrate.
9. The BC battery preparation method according to claim 8, wherein the texturing on the front surface of the silicon substrate comprises:
etching the front surface of the silicon substrate by adopting an acid solution, and forming a plurality of pits on the front surface of the silicon substrate;
and adopting alkali solution to texture the front surface of the silicon substrate, and forming texture surfaces in the pits.
10. A BC battery, comprising: a silicon substrate; the front surface of the silicon substrate is provided with a first passivation layer and a second passivation layer which are arranged in a layered manner along the thickness direction; the first passivation layer is used for forming hydrogen passivation on the front surface of the silicon substrate; the second passivation layer is used for forming field passivation on the front surface of the silicon substrate; the back surface of the silicon substrate is provided with a P region and an N region; and grid lines are arranged on the P region and the N region.
11. The BC cell of claim 10, wherein the front side of the silicon substrate is provided with a first passivation layer; the surface of the first passivation layer, which faces away from the silicon substrate, is provided with the second passivation layer;
or, the front surface of the silicon substrate is provided with a second passivation layer; the surface of the second passivation layer, which faces away from the silicon substrate, is provided with the first passivation layer.
12. The BC battery according to claim 10, wherein the front surface of the silicon substrate is provided with the first passivation layers and the second passivation layers alternately layered in the thickness direction.
13. The BC battery of claim 10, wherein the first passivation layer is a hydrogen-containing aluminum oxide passivation layer; the second passivation layer is an aluminum oxide passivation layer that is free of hydrogen.
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