CN108615775A - A kind of interdigital back contacts hetero-junctions monocrystalline silicon battery - Google Patents
A kind of interdigital back contacts hetero-junctions monocrystalline silicon battery Download PDFInfo
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- CN108615775A CN108615775A CN201810715221.5A CN201810715221A CN108615775A CN 108615775 A CN108615775 A CN 108615775A CN 201810715221 A CN201810715221 A CN 201810715221A CN 108615775 A CN108615775 A CN 108615775A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 65
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 72
- 229910000979 O alloy Inorganic materials 0.000 claims abstract description 22
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000011159 matrix material Substances 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims description 28
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000031700 light absorption Effects 0.000 abstract description 6
- 230000009849 deactivation Effects 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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Abstract
The invention discloses a kind of interdigital back contacts hetero-junctions monocrystalline silicon batteries, including：One n type single crystal silicon matrix, n type single crystal silicon matrix have opposite a front and a back side；Set on the doping N of n type single crystal silicon front side of matrix+Layer and positive N-type non-crystalline silicon layer；P-type non-crystalline silicon layer and back side N-type non-crystalline silicon layer of the interval set on the n type single crystal silicon matrix back side.The interdigital back contacts hetero-junctions monocrystalline silicon battery of the present invention, is thinned the thickness of routine back contacts hetero-junctions n type single crystal silicon battery front side N-type non-crystalline silicon layer, and the N being lightly doped is arranged under non-crystalline silicon oxygen alloy layer+Layer, can not only reduce light absorption, the light loss of N-type non-crystalline silicon layer, but also using N+Layer achievement unit branch deactivation function, improves the photoelectric conversion efficiency of battery；N simultaneously+The lateral low-resistance conductive path that photo-generated carrier can also be provided in layer improves the short circuit current, fill factor and transfer efficiency of battery to reduce series resistance losses.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular, to a kind of interdigital back contacts hetero-junctions monocrystalline silicon electricity
Pond.
Background technology
Crystal-silicon solar cell has high conversion efficiency, good operating stability, long working life and manufacturing technology maturation etc.
Feature is the main force in current photovoltaic market.The p type single crystal silicon material of opposite boron-doping, the n type single crystal silicon material of p-doped
Middle boron content is extremely low, can be ignored to caused photo attenuation by boron oxygen, some metal impurities in N-type silicon materials are empty to few son
The capture ability in cave be less than P-type material in impurity to the capture ability of sub- electronics less, the N-type silicon ratio P under identical doping concentration
Type silicon has higher minority carrier lifetime.These characteristics make N-type silion cell have potential long-life and efficient
Advantage, N-type silion cell solar cell have become the developing direction of the following high efficiency crystal-silicon solar cell.
Interdigital back contacts (Interdigitated Back Contact, abbreviation IBC) electricity based on n type single crystal silicon substrate
Crystalline silicon photovoltaic effect, in cell backside, is collected in pond, front respectively without any distribution of electrodes, emitter and base stage cross arrangement
The photo-generated carrier of generation can be effectively increased electricity since battery front side does not have the optical loss that metal electrode grid line blocks generation
The short circuit current of pond piece improves transfer efficiency.Non-crystalline silicon (a-Si:H)/n type single crystal silicon (c-Si) hetero-junctions (Hetero-
Junction with Intrinsic Thin-layer, abbreviation HIT) battery is by intrinsic amorphous silicon (i-a-Si:H) good
Surface passivation acts on, by being inserted into one layer of very thin intrinsic amorphous between P-type non-crystalline silicon or N-type non-crystalline silicon and monocrystal silicon substrate
Silicon can be passivated the defect of monocrystalline silicon surface, and interfacial state and the surface recombination of monocrystalline silicon is greatly reduced, to improve minority carrier
Service life obtains higher open-circuit voltage.
N-type silicon back contacts heterojunction solar battery is (hereinafter referred to as：HIBC batteries) it is hetero-junction solar cell and interdigital back contacts
The coupling battery of battery, using the superior surface passivation performance of non-crystalline silicon, and the knot for combining the no metal in IBC structures front to block
Structure advantage has been compatible with the good characteristic of two kinds of batteries, has good optically and electrically performance, process temperatures are low, stability is good；
Battery front side is without grid line shading, it is ensured that battery has high short circuit current (Isc)；Battery tow sides have the hydrogen of high quality
Change amorphous silicon passivation layer, ensure that battery has high open-circuit voltage (Voc).
In general, the front of interdigital back contacts hetero-junctions n type single crystal silicon battery uses n type single crystal silicon matrix, sheet from inside to outside
It is excellent that the advantages of structure that sign non-crystalline silicon, N-type non-crystalline silicon, antireflection layer are sequentially overlapped, this structure, is that intrinsic amorphous silicon provides
Different chemical passivation performance, N-type non-crystalline silicon realize field passivation；The disadvantage is that front photo-generated carrier generation rate is high, and non-crystalline silicon
It is very short that layer absorbs the photo-generated carrier service life that light generates, it is difficult to effective photogenerated current is formed, to reduce short circuit current
Density causes shortwave effect to decline and increases with optical loss；Furthermore it is electric because of caused by the light absorption of amorphous silicon layer in order to reduce
Pond short-circuit current density declines, and must optimize when designing, manufacturing back contacts hetero-junctions n type single crystal silicon battery, control battery front side N
The thickness of type non-crystalline silicon and intrinsic amorphous silicon layer, and to the conversion effect for realizing excellent inactivating performance and further promotion battery
Rate brings difficulty.
Invention content
To solve the above-mentioned problems of the prior art, the present invention provides a kind of interdigital back contacts hetero-junctions monocrystalline silicon electricity
The photoelectric conversion efficiency of battery is improved to reduce the light loss of battery front side in the prior art in pond.
In order to reach foregoing invention purpose, present invention employs the following technical solutions：
The present invention provides a kind of interdigital back contacts hetero-junctions monocrystalline silicon batteries, including：
One n type single crystal silicon matrix, the n type single crystal silicon matrix have opposite a front and a back side；
Set on the doping N of the n type single crystal silicon front side of matrix+Layer and positive N-type non-crystalline silicon layer；
P-type non-crystalline silicon layer and back side N-type non-crystalline silicon layer of the interval set on the n type single crystal silicon matrix back side.
Preferably, the doping N+Layer is that N is lightly doped+Layer, the doping N+Layer surface dopant concentration be less than 1 ×
1018cm-3, diffusion depth is 0.2~1 μm.
Preferably, the thickness of the positive N-type non-crystalline silicon layer is 1~10nm.
Preferably, the monocrystalline silicon battery further includes being set to the doping N+It is non-between layer and positive N-type non-crystalline silicon layer
Passivation layer before crystal silicon oxygen alloy.
Preferably, the thickness of passivation layer is 1~10nm before the non-crystalline silicon oxygen alloy, and optical energy gap is more than 2eV.
Preferably, the monocrystalline silicon battery further includes the anti-reflection layer for being set to the positive N-type non-crystalline silicon layer surface.
Preferably, the anti-reflection layer is one or two kinds of combinations of oxide, nitride, and the anti-reflection layer thickness is 50
~200nm.
Preferably, the monocrystalline silicon battery further includes being set to connecing on the P-type non-crystalline silicon layer and back side N-type non-crystalline silicon layer
Contact layer and the dielectric isolation layer (10) between the P-type non-crystalline silicon layer and back side N-type non-crystalline silicon layer.
Preferably, the contact layer is made of transparent conductive film and metal electrode lamination, the transparent conductive film packet
Include the In of tin dope2O3With the ZnO of aluminium doping, the metal electrode is silver, copper or aluminium.
Preferably, the monocrystalline silicon battery further includes that the non-crystalline silicon oxygen alloy set on the n type single crystal silicon matrix back side is carried on the back
Passivation layer.
Compared with prior art, it is heterogeneous that routine back contacts are thinned in interdigital back contacts hetero-junctions monocrystalline silicon battery of the invention
The thickness of n type single crystal silicon battery front side N-type non-crystalline silicon layer is tied, and the N being lightly doped is set under non-crystalline silicon oxygen alloy layer+Layer, both
Light absorption, the light loss of N-type non-crystalline silicon layer can be reduced, and using N+Layer achievement unit branch deactivation function, improves battery
Photoelectric conversion efficiency；N simultaneously+The lateral low-resistance conductive path of photo-generated carrier can also be provided in layer, to reduce series resistance damage
Consumption, improves the short circuit current, fill factor and transfer efficiency of battery.
In addition, the front of battery replaces intrinsic amorphous silicon layer as passivation using the broader non-crystalline silicon oxygen alloy of optical energy gap
On the one hand layer can reduce absorption of the passivation layer in blue light region, reduce light loss, improve the short-circuit current density of battery, another party
Face non-crystalline silicon oxygen alloy surface defect density is lower than intrinsic amorphous silicon, it can be achieved that more excellent interface passivation effect.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description be only the present invention some
Embodiment for those of ordinary skill in the art without having to pay creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the structural schematic diagram of the interdigital back contacts hetero-junctions monocrystalline silicon battery of the embodiment of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention is retouched in detail
It states, it is clear that described embodiment is only a part of example of the present invention, rather than whole embodiments.Based in the present invention
Embodiment, the every other embodiment that those of ordinary skill in the art are obtained without making creative work,
Belong to the scope of the present invention.
It is a kind of interdigital back contacts hetero-junctions monocrystalline silicon battery of the embodiment of the present invention, the monocrystalline silicon battery referring to Fig. 1
Including n type single crystal silicon matrix 1, wherein the n type single crystal silicon matrix 1 has opposite a front and a back side；In n type single crystal silicon
The front of matrix 1 is sequentially prepared single side and N is lightly doped+Layer 2, non-crystalline silicon oxygen alloy (a-SiOx:H passivation layer 3, positive N-type are non-before)
Crystal silicon layer 4 and anti-reflection layer 5；Non-crystalline silicon oxygen alloy (a-SiOx is prepared at the back side of n type single crystal silicon matrix 1:H) non-crystalline silicon oxygen alloy
Carry on the back passivation layer 6；The surface alternating deposit P-type non-crystalline silicon layer 7 and back side N-type non-crystalline silicon layer of passivation layer 6 are carried on the back in non-crystalline silicon oxygen alloy
8；It is sequentially depositing transparent conductive film, metal film in P-type non-crystalline silicon layer 7 and 8 surface of back side N-type non-crystalline silicon layer respectively, formation connects
Contact layer 9；Area deposition dielectric isolation layer 10 between P-type non-crystalline silicon layer 7 and back side N-type non-crystalline silicon layer 8.
By the way that the thickness of back contacts hetero-junctions n type single crystal silicon battery front side N-type non-crystalline silicon layer 4 is thinned, and in amorphous silica
The N being lightly doped is provided under alloy-layer+Layer, can not only reduce light absorption, the light loss of N-type non-crystalline silicon layer 4, but also using being lightly doped
N+Layer achievement unit branch deactivation function, while the N being lightly doped+The lateral low-resistance conductive path of photo-generated carrier can also be provided in layer,
To reduce series resistance losses, the fill factor and transfer efficiency of battery are improved, the photoelectric conversion efficiency of battery is improved.
Except above-mentioned points, since the cellar area of back contacts hetero-junctions n type single crystal silicon battery is often larger, the resistance of silicon substrate
Rate is higher, and the photo-generated carrier for resulting from battery front side needs to transmit relatively long distance and gets to cell backside and be collected, photoproduction
Carrier transport causes larger series resistance losses, is reduced so as to cause fill factor.And the N being lightly doped+Layer 2 is well
Solves the problems, such as this, the N being lightly doped+Layer 2 can provide the lateral low-resistance conductive path of photo-generated carrier, to reduce series resistance
Loss, improves the short circuit current, fill factor and transfer efficiency of battery.
Preferably, the thickness of the positive N-type non-crystalline silicon layer 4 is 1~10nm, the doping N+Layer 2 is that N is lightly doped+Layer,
The doping N+The surface dopant concentration of layer 2 is less than 1 × 1018cm-3, diffusion depth is 0.2~1 μm.The positive N of the thickness range
The doping N of type amorphous silicon layer 4 and the doping level and diffusion depth+Layer 2, realizes the light absorption for both reducing N-type non-crystalline silicon layer, light
Loss, and the purpose for the passivation effect having had.
Preferably, the thickness of passivation layer 3 is 1~10nm before the non-crystalline silicon oxygen alloy, and optical energy gap is more than 2eV.This
The front of the battery of embodiment replaces intrinsic amorphous silicon layer as passivation layer using the broader non-crystalline silicon oxygen alloy of optical energy gap, and one
Aspect can reduce absorption of the passivation layer in blue light region, reduce light loss, improve the short-circuit current density of battery, another aspect amorphous
Silica alloy surface defect concentration is lower than intrinsic amorphous silicon, it can be achieved that more excellent interface passivation effect.
Likewise, the non-crystalline silicon oxygen alloy back of the body passivation layer 6 at 1 back side of n type single crystal silicon matrix is wider using optical energy gap
Non-crystalline silicon oxygen alloy replace intrinsic amorphous silicon layer to be used as passivation layer, the interdigital back contacts hetero-junctions monocrystalline silicon battery of setting guarantee
The interface passivation effect at the back side, it is preferred that the thickness that non-crystalline silicon oxygen alloy carries on the back passivation layer 6 is 1~10nm, and optical energy gap is more than
2eV。
Preferably, 1 resistivity of n type single crystal silicon matrix of the present embodiment be 0.5~10 Ω cm, thickness be 100~
300μm；
The anti-reflection layer 5 is one or two kinds of combinations of oxide, nitride, 5 thickness of the anti-reflection layer is 50~
200nm.The anti-reflection layer 4 of the thickness reduces reflection loss to the maximum extent, and increases the transmitance of light, to improve the effect of battery
Rate.
Referring to Fig.1, the thickness of P-type non-crystalline silicon layer 7 is 10~100nm, and width is 100~1000 μm.Wherein back side N-type is non-
The thickness of crystal silicon layer 8 is identical as the thickness of P-type non-crystalline silicon layer 7, but its width is less than the width of P-type non-crystalline silicon layer 7.
Wherein, contact layer 9 can be made of transparent conductive film and metal electrode lamination.The transparent conductive film includes tin
The In of doping2O3With the ZnO (AZO) etc. of aluminium doping, the metal electrode is the materials such as silver, copper or aluminium.The width of contact layer 9 is
10~300 μm.
Preferably, dielectric isolation layer 10 uses one or more combinations of silica, silicon nitride, aluminium oxide.
Routine back contacts hetero-junctions n type single crystal silicon battery is thinned in the interdigital back contacts hetero-junctions monocrystalline silicon battery of the present invention
The thickness of positive N-type non-crystalline silicon layer, and the N being lightly doped is set under non-crystalline silicon oxygen alloy layer+Layer, can both reduce N-type non-crystalline silicon
The light absorption of layer, light loss, and using N+Layer achievement unit branch deactivation function, improves the photoelectric conversion efficiency of battery；Together
When N+The lateral low-resistance conductive path that photo-generated carrier can also be provided in layer improves the short of battery to reduce series resistance losses
Road electric current, fill factor and transfer efficiency.
In addition, the front of battery replaces intrinsic amorphous silicon layer as passivation using the broader non-crystalline silicon oxygen alloy of optical energy gap
On the one hand layer can reduce absorption of the passivation layer in blue light region, reduce light loss, improve the short-circuit current density of battery, another party
Face non-crystalline silicon oxygen alloy surface defect density is lower than intrinsic amorphous silicon, it can be achieved that more excellent interface passivation effect.
Although the present invention has shown and described with reference to specific embodiment, it will be understood by those of skill in the art that
In the case where not departing from the spirit and scope of the present invention limited by claim and its equivalent, can carry out herein form and
Various change in details.
Claims (10)
1. a kind of interdigital back contacts hetero-junctions monocrystalline silicon battery, which is characterized in that including：
One n type single crystal silicon matrix (1), the n type single crystal silicon matrix (1) have opposite a front and a back side；
Set on the positive doping N of n type single crystal silicon matrix (1)+Layer (2) and positive N-type non-crystalline silicon layer (4)；
P-type non-crystalline silicon layer (7) and back side N-type non-crystalline silicon layer (8) of the interval set on n type single crystal silicon matrix (1) back side.
2. monocrystalline silicon battery according to claim 1, which is characterized in that the doping N+Layer (2) is that N is lightly doped+Layer, institute
State doping N+The surface dopant concentration of layer (2) is less than 1 × 1018cm-3, diffusion depth is 0.2~1 μm.
3. monocrystalline silicon battery according to claim 2, which is characterized in that it is described front N-type non-crystalline silicon layer (4) thickness be
1~10nm.
4. according to the monocrystalline silicon battery described in claims 1 to 3 any one, which is characterized in that the monocrystalline silicon battery also wraps
It includes and is set to the doping N+Passivation layer (3) before non-crystalline silicon oxygen alloy between layer (2) and positive N-type non-crystalline silicon layer (4).
5. monocrystalline silicon battery according to claim 4, which is characterized in that passivation layer (3) before the non-crystalline silicon oxygen alloy
Thickness is 1~10nm, and optical energy gap is more than 2eV.
6. monocrystalline silicon battery according to claim 5, which is characterized in that the monocrystalline silicon battery further include be set to it is described just
The anti-reflection layer (5) on face N-type non-crystalline silicon layer (4) surface.
7. monocrystalline silicon battery according to claim 6, which is characterized in that the anti-reflection layer (5) is oxide, nitride
One or two kinds of combinations, anti-reflection layer (5) thickness are 50~200nm.
8. monocrystalline silicon battery according to claim 5, which is characterized in that the monocrystalline silicon battery further includes being set to the P
Contact layer (9) on type amorphous silicon layer (7) and back side N-type non-crystalline silicon layer (8) and it is set to the P-type non-crystalline silicon layer (7) and back side N
Dielectric isolation layer (10) between type amorphous silicon layer (8).
9. monocrystalline silicon battery according to claim 8, which is characterized in that the contact layer (9) by transparent conductive film with
Metal electrode lamination forms, and the transparent conductive film includes the In of tin dope2O3With the ZnO of aluminium doping, the metal electrode is
Silver, copper or aluminium.
10. monocrystalline silicon battery according to claim 9, which is characterized in that the monocrystalline silicon battery further includes being set to the N
The non-crystalline silicon oxygen alloy back of the body passivation layer (6) at type single crystal silicon substrate (1) back side.
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