WO2023048148A1 - 接続構造体の製造方法 - Google Patents
接続構造体の製造方法 Download PDFInfo
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- WO2023048148A1 WO2023048148A1 PCT/JP2022/035026 JP2022035026W WO2023048148A1 WO 2023048148 A1 WO2023048148 A1 WO 2023048148A1 JP 2022035026 W JP2022035026 W JP 2022035026W WO 2023048148 A1 WO2023048148 A1 WO 2023048148A1
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- containing film
- conductive particle
- substrate
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- resin layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 232
- 239000000758 substrate Substances 0.000 claims abstract description 107
- 229920005989 resin Polymers 0.000 claims abstract description 92
- 239000011347 resin Substances 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 70
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000003825 pressing Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 81
- 239000011521 glass Substances 0.000 description 15
- 239000011342 resin composition Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000003505 polymerization initiator Substances 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 9
- 238000012546 transfer Methods 0.000 description 7
- 239000004205 dimethyl polysiloxane Substances 0.000 description 6
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- -1 acrylate compound Chemical class 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004128 high performance liquid chromatography Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012719 thermal polymerization Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007718 adhesive strength test Methods 0.000 description 2
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000003566 oxetanyl group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81091—Under pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/8185—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/81855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/81862—Heat curing
Definitions
- the present invention relates to a method of manufacturing a connection structure that reliably electrically connects minute electronic components that are difficult for humans to handle manually onto a substrate.
- Fine electronic components have been developed for display applications, for example (Patent Documents 1 and 2). Such minute electronic components are generally manufactured by being separated from a wafer using a dicing tool, and mounted by wire bonding or the like on a glass substrate on which a driver circuit is formed.
- a conductive particle-containing film in which conductive particles are held in an insulating resin layer is used.
- the conductive particle-containing film exhibits conductivity only in the film thickness direction, and is therefore also called an anisotropic conductive film.
- the ratio of the thickness of the insulating resin layer and the particle size of the conductive particles in the conductive particle-containing film is specified.
- Patent Document 3 Patent Document 4
- Even micro-sized electronic parts having an electrode area of about 1000 ⁇ m 2 (eg, 100 ⁇ 10 ⁇ m) in electrode rows such as bumps formed on the electronic parts, and even micro-sized semiconductor electrodes can be used. Even if there is, it can be connected to the substrate using a film containing conductive particles.
- the number of conductive particles captured in one electrode is 3 or more, preferably 10 or more, from the viewpoint of the stability of electrical properties. is required.
- the electrodes themselves are miniaturized. There are situations where it is necessary to be able to do things that are not possible with conventional anisotropic conductive connection specifications, such as 1-3 trapped conductive particles per electrode.
- a laminating step a step of stacking electronic components on a conductive particle-containing film provided on a substrate, pressing the electronic component against the substrate through the conductive particle-containing film, and adding an insulating resin layer of the conductive particle-containing film.
- the difficulty of the connection process which consists of a curing process that completes the connection of electronic components by pressure curing or heat and pressure curing, increases the difficulty, requires a long time for precise connection, and prevents insulation before the connection is completed. There is a concern that curing of the resin layer may progress unnecessarily.
- the present invention provides a film containing conductive particles so that fine electronic parts having an area of each electrode of 1000 ⁇ m 2 or less or a length of the longest side of the electronic part of 600 ⁇ m or less and a substrate can be precisely and reliably connected.
- the task is to
- the present inventor provides a conductive particle-containing film on a substrate, superimposes a fine electronic component and a substrate via the conductive particle-containing film, and pressurizes the superimposed electronic component and the substrate while insulating the conductive particle-containing film.
- the resin layer is cured and connected, if the insulating resin layer of the conductive particle-containing film is heated from 40 ° C. to 80 ° C., it takes 10 minutes or more from the start of heating to the start of curing.
- the inventors have found that the insulating resin layer can be prevented from starting to harden unnecessarily during the period from attachment to connection, and the electronic component and the substrate can be connected precisely and reliably, thereby completing the present invention.
- the present invention provides a method for manufacturing a connection structure in which a fine electronic component and corresponding electrodes of a substrate having electrodes corresponding to the electrodes of the electronic component are electrically connected to each other, A superposition step of superimposing the electronic component and the substrate via a conductive particle-containing film in which the conductive particles are held on the insulating resin layer, A pressure curing step of curing the insulating resin layer of the conductive particle-containing film while pressing the electronic component and the substrate superimposed via the conductive particle-containing film, has The curing property of the conductive particle-containing film provides a production method in which the time from the start of heating to the start of curing of the insulating resin layer when the conductive particle-containing film is heated from 40° C. to 80° C. is 10 minutes or more. .
- a fine electronic component and a substrate having electrodes corresponding to the electrodes of the electronic component are adhered with an insulating resin, and the corresponding electrodes of the electronic component and the substrate are sandwiched between them.
- a connection structure electrically connected by one or more but less than three conductive particles.
- the conductive particle-containing film a film in which the time from the start of heating to the start of curing of the insulating resin layer when the conductive particle-containing film is heated from 40° C. to 80° C. is 10 minutes or more is used. Therefore, the conductive particle-containing film is provided on the substrate, the fine electronic article is superimposed on the substrate through the conductive particle-containing film, and the insulating resin layer is cured under pressure. is prevented. Therefore, it is possible to accurately connect even minute electronic components with individual electrodes having an area of 1000 ⁇ m 2 or less or having a longest side length of 600 ⁇ m or less to the substrate.
- FIG. 1 is a cross-sectional view of a semiconductor component held on a semiconductor processing film.
- FIG. 2A is a plan view showing particle arrangement of a conductive particle-containing film.
- FIG. 2B is a cross-sectional view of a film containing conductive particles.
- FIG. 3A is a cross-sectional view showing a state in which a release film is attached to a semiconductor component on a semiconductor processing film.
- FIG. 3B is a cross-sectional view of a state in which the film for semiconductor processing is peeled off from the semiconductor component.
- FIG. 4 is a cross-sectional view showing a state in which the conductive particle-containing film arranged on the substrate is aligned with the semiconductor component attached to the release film.
- FIG. 5 is a cross-sectional view showing a state in which a semiconductor component and a substrate are overlaid with a conductive particle-containing film interposed therebetween, and the release film is peeled off.
- FIG. 6 is a cross-sectional view showing a state in which the semiconductor component and the substrate from which the release film has been peeled are pressed from the semiconductor component side with a pressure tool.
- FIG. 7 is a cross-sectional view of a state in which the conductive particles are sandwiched between the electrode of the semiconductor component and the electrode of the substrate by the first pressurization.
- FIG. 8 is a cross-sectional view of a state in which the electrode of the semiconductor component and the electrode of the substrate are electrically connected by the second pressurization.
- connection structure of the present invention The method for manufacturing the connection structure of the present invention will be described in detail below with reference to the drawings.
- symbol represents the same or equivalent component.
- each electrode has an area of 1000 ⁇ m 2 or less, 500 ⁇ m 2 or less, further 200 ⁇ m 2 or less, or the electronic component has a longest side length of 600 ⁇ m or less, 300 ⁇ m or less, or 150 ⁇ m.
- it is a minute electronic component of 50 ⁇ m or less.
- Examples of such electronic parts include various ICs including general driver ICs, semiconductor parts such as optical semiconductor elements, thermoelectric conversion elements (Peltier elements), switching elements, piezoelectric elements, and resistors.
- ICs including general driver ICs, semiconductor parts such as optical semiconductor elements, thermoelectric conversion elements (Peltier elements), switching elements, piezoelectric elements, and resistors.
- a mini-LED whose one side of the chip is about 50 to 200 ⁇ m and a ⁇ LED whose one side of the chip is less than 50 ⁇ m can be mentioned.
- FIG. 1 is a cross-sectional view of a state in which a plurality of semiconductor components are held by a semiconductor processing film 3 as an example of electronic components 1 connected by the method of the present invention.
- the semiconductor processing film 3 includes known dicing tapes, die bonding tapes, release films, and the like.
- the plurality of electrodes on the electrode forming surface of the electronic component 1 have the same height when connecting to the electrodes of the substrate.
- the electronic component 1 to be connected by the method of the present invention is fine, for example, the area of each electrode is 1000 ⁇ m 2 or less, 500 ⁇ m 2 or less, further 200 ⁇ m 2 or less, or the length of the longest side of the electronic component 1 is 600 ⁇ m or less, 300 ⁇ m or less, 150 ⁇ m or less, or even 50 ⁇ m or less.
- the shortest side of the electronic component 1 must be of a size that ensures that at least one conductive particle is sandwiched between each electrode. is preferred. Therefore, it is preferable that the shortest side of the electronic component 1 connected by the method of the present invention is 5 ⁇ m or more.
- the preferred thickness of the electronic component 1 to be connected by the method of the present invention varies depending on the material and strength of the electronic component 1, the height of the electrodes, connection conditions, etc. 2 or less, or if the length of the longest side of the electronic component is 600 ⁇ m or less, the thickness can be 200 ⁇ m or less, or even 50 ⁇ m or less, and if the length of the longest side is 300 ⁇ m or less, the thickness can be 50 ⁇ m or less. When the length of the longest side is 150 ⁇ m or less, the thickness can be 30 ⁇ m or less; In particular, it can be 10 ⁇ m or less.
- the thickness does not include the height of the electrodes used for electrical connection via the conductive particles.
- the height of the electrodes 2 of the electronic component 1 may be substantially zero.
- the height of the electrode 2 is preferably higher than 1 times the average particle size of the conductive particles so that the conductive particles can be efficiently pushed into the electrodes by pressurization.
- the height of the electrode 2 is excessively high, the amount of resin filled between the electrodes will be unnecessarily large. preferable.
- it is preferably 10 ⁇ m or less, more preferably 6 ⁇ m or less.
- FIG. 1 shows an example in which the semiconductor component 1 held by the semiconductor processing film 3 is used as an example. It does not have to be held on the film for use.
- the substrate 20 for connecting the electronic component 1 may be a transparent substrate such as a glass substrate or a plastic substrate, or may be an opaque substrate.
- known electronic components such as a ceramic substrate, a rigid resin substrate, and an FPC can be used.
- FIG. 2A is a plan view of an example of the conductive particle-containing film 10 used in the present invention
- FIG. 2B is a cross-sectional view thereof.
- the conductive particles 11 are held by the insulating resin layer 12 .
- the conductive particles 11 held in the insulating resin layer 12 in the conductive particle-containing film 10 include metal particles such as nickel, cobalt, silver, copper, gold, and palladium; alloy particles such as solder; metal-coated resin particles; and metal-coated resin particles having insulating fine particles attached to them. Two or more types can also be used together. Among them, the metal-coated resin particles are preferable because the resin particles repel each other after being connected, thereby making it easy to maintain contact with the terminal and stabilizing the conduction performance. Moreover, the surface of the conductive particles may be subjected to an insulating treatment by a known technique so as not to interfere with the conductive properties.
- the particle size of the conductive particles 11 is set to less than 10 ⁇ m, preferably 4 ⁇ m or less, so that one or more conductive particles can be reliably captured by each electrode even if the electrodes are very small.
- the thickness is preferably 1 ⁇ m or more, more preferably 2.5 ⁇ m or more, from the viewpoint of increasing the precision with which the conductive particles 11 are pushed into the electrode.
- the particle size means the average particle size.
- the average particle size of the conductive particles 11 in the conductive particle-containing film 10 can be obtained from a planar image or a cross-sectional image. The average particle size may be obtained by measuring the particle size of 200 or more particles by microscopic observation.
- the conductive particles 11 are arranged regularly in the conductive particle-containing film 10 in order to ensure that one or more conductive particles are captured by each electrode of a fine electronic component. It is preferable that they are arranged in a lattice like the conductive particle-containing film described in Document 3. In particular, when the electronic component 1 is obtained by dicing from a wafer, electrodes are formed along the sides of the electronic component 1, so the array of the conductive particles 11 is desirably a rectangular lattice array. . In the conductive particle-containing film 10 shown in FIG. 2A, the conductive particles 11 are arranged in a square lattice.
- the conductive particle-containing film a film in which the conductive particles are evenly and randomly dispersed may be used.
- the conductive particles 11 may be embedded in the insulating resin layer 12 or may be exposed. It is preferable that the positions of the conductive particles 11 in the film thickness direction are uniform, and that they are unevenly distributed on one side of the conductive particle-containing film. By being unevenly distributed on one side, pressing is performed evenly, and unexpected movement of particles can be suppressed.
- the upper and lower limits of the number density of the conductive particles are not particularly limited because they change depending on the object to be connected.
- the lower limit of the number density can be 30 pieces/mm 2 or more, or 12000 pieces/mm 2 or more, or 150000 pieces/mm 2 or more
- the upper limit of the number density can be, for example, 500000 pieces/mm 2 or less, or 350,000/mm 2 or less, or 300,000/mm 2 or less.
- the insulating resin layer 12 forming the conductive particle-containing film 10 may be composed of a single insulating resin layer, or may be composed of a laminate of a plurality of insulating resin layers.
- the layer structure of the conductive particle-containing film 10 as shown in FIG. , and holding the conductive particles 11 in the high-viscosity resin layer 13 is preferable from the viewpoint of suppressing unnecessary flow of the conductive particles 11 .
- the minimum melt viscosity (A1) of the high-viscosity resin layer 13, the minimum melt viscosity (A2) of the low-viscosity resin layer 14, their ratio (A1/A2), and their layer thicknesses are as described in Japanese Patent No. 6,187,665. It can be the same as the known anisotropic conductive film described in JP-A-2018-81906.
- the lower limit of the layer thickness of the insulating resin layer 12 is preferably 1 time or more, more preferably 1.3 times or more, or 3 ⁇ m or more, as large as the particle diameter of the conductive particles. Moreover, the upper limit can be two times or less the particle diameter of the conductive particles or 20 ⁇ m or less.
- the thickness of the laminate is preferably within these ranges.
- the layer thickness of the insulating resin layer 12 can be measured using a known micrometer or digital thickness gauge. In this case, for example, 10 or more points may be measured, and the average value may be taken as the layer thickness.
- the resin composition that forms the insulating resin layer 12 is appropriately selected according to the types of the electronic component 1 and the substrate 20 to be connected by the conductive particle-containing film 10, and may be a thermoplastic resin composition or a high-viscosity adhesive resin composition. , can be formed from a curable resin composition.
- a curable resin composition formed from a polymerizable compound and a polymerization initiator can be used in the same manner as the resin composition forming the insulating resin layer of the conductive particle-containing film described in Japanese Patent No. 6187665. .
- a thermal polymerization initiator may be used, a photopolymerization initiator may be used, or they may be used in combination.
- a cationic polymerization initiator is used as the thermal polymerization initiator
- an epoxy resin is used as the thermally polymerizable compound
- a photoradical polymerization initiator is used as the photopolymerization initiator
- an acrylate compound is used as the photopolymerizable compound.
- a thermal anionic polymerization initiator may be used as the thermal polymerization initiator.
- the thermal anionic polymerization initiator it is preferable to use a microcapsule-type latent curing agent having a nucleus of an imidazole-modified body and the surface of which is coated with polyurethane.
- the conductive particle-containing film 10 is heated from 40° C. to 80° C. by selecting the type of curable resin composition forming the insulating resin layer 12, adjusting the concentration of the polymerization initiator, and the like.
- the time from the start of heating to the start of curing of the insulating resin layer 12 is 10 minutes or more, 20 minutes or more, or further 25 minutes or more. This is because the time from when the insulating resin layer 12 of the conductive particle-containing film 10 is heated in the temperature range of 40° C. to 80° C. to when the insulating resin layer 12 starts to harden is 10 minutes or longer.
- the time until curing starts means the time until each insulating resin layer starts curing.
- the superposition process is performed on the stage of a pressure device heated to about 40°C. Moreover, even when the superimposing process is not performed on the heated stage, there is a case where it is placed on the heated stage before the heating and pressurizing process. Therefore, if the curing start time of the resin composition is short when the conductive particle-containing film 10 is heated at 40 to 80° C., there is a possibility that the resin composition will start curing before the superposing step is completed. On the other hand, by setting the curing start time at 40 to 80° C. to 10 minutes or longer, even if the superimposition process is performed on the stage of the pressurizing device that is heated, the superimposition process can be performed before the start of curing. It is possible to complete.
- the time until the start of curing is originally set according to the time required for the superimposition process, so that the process of providing the conductive particle-containing film on the substrate and the superimposition process can be performed. It is preferable from the viewpoint of shortening the subsequent pressure curing process, but by setting this time to 10 minutes or more, the application of electronic parts is, for example, smartphones, large-sized televisions, public displays (digital signage), wearable displays. (smart watch), etc., it is possible to sufficiently secure the time necessary for the superimposition process. That is, in general, it takes several seconds to several tens of seconds to superimpose an electronic component such as an IC chip (driver IC) and a substrate via a film containing conductive particles.
- an electronic component such as an IC chip (driver IC) and a substrate via a film containing conductive particles.
- this superposition process becomes a precise work. Therefore, for example, fine electronic components such as ⁇ LEDs, in which the area of each electrode is 1000 ⁇ m 2 or less, or the length of the longest side of the electronic component is 600 ⁇ m or less, are more difficult to stack than larger IC chips and the like. It is preferable to secure a long period of time. This is because the number of mounted parts increases due to the minute size.
- the time required for the superimposition process varies depending on conditions such as the method of mounting the components and the apparatus, but as an example, it can take 5 minutes or more, and in some cases 10 minutes or more.
- the curing start time of the insulating resin layer 12 of the conductive particle-containing film 10 at 40° C. to 80° C. is 10 minutes or more, or the curing start time is sufficiently long with respect to the time required for the temporary bonding and superimposition steps. Whether it can be said to be time can be confirmed, for example, by the following (i), (ii), and (iii).
- the reaction start time may be measured from the peak temperature measured when the conductive particle-containing film 10 is heated using a differential scanning calorimeter (DSC).
- DSC differential scanning calorimeter
- the temperature is changed by DSC. may be measured.
- the heating rate is set to 10°C/min, preferably 5°C/min, and the holding time is set after reaching 80°C.
- the reaching temperature can also be 60°C. In this case, the temperature is raised from room temperature (25° C. ⁇ 15° C.).
- the reaching temperature may be 40°C.
- the temperature peak (exothermic peak) indicating the start of curing between 40°C and 80°C does not occur for 10 minutes or longer, and more preferably does not occur for 20 minutes or longer.
- the term "10 minutes or more” means that when the temperature reaches the range of 40°C to 80°C by raising the temperature from room temperature, the time is 10 minutes or more after reaching 40°C. When it is heated, it means 10 minutes or more from the time when the temperature rise to 60°C starts. If 80°C is reached within 10 minutes, include the time held at 80°C. Simply, it can be tested as the time left in a constant temperature bath set at 80°C.
- the temperature and time for curing the insulating resin layer 12 may be appropriately adjusted according to the time required for the step of superimposing the electronic component and the substrate.
- the present invention prioritizes securing the time required for the preceding superposition step rather than achieving the curing step by thermocompression in a short time at a low temperature. It is different from the method of connecting electronic components using the inclusion film.
- (iii) Curing Rate of Insulating Resin Layer The fact that the time from heating the conductive particle-containing film 10 to the temperature range of 40° C. to 80° C. to the start of curing is 10 minutes or more means that the conductive particle-containing film 10 is 40% cured. C. to 80.degree. C. 10 minutes after the curing rate of the insulating resin layer 12 is 25% or less, preferably 20% or less.
- the curing rate can be obtained by measuring the height of a specific peak in the FT-IR chart of the curable resin composition, measuring the exothermic peak area of DSC, or the like.
- the conductive particle-containing film is pre-divided according to the size and arrangement of the ⁇ LED on the electrode of the electronic component or the electrode of the substrate by the laser lift-off method.
- the reaction rate after transfer of the curable resin composition constituting the insulating resin layer of the conductive particle-containing film is preferably 25% or less, more preferably 20% or less, and still more preferably 15% or less. and it is preferable to select the type of resin of the curable resin composition, adjust the concentration of the polymerization initiator, etc. so that this is satisfied.
- the reaction rate may be measured from the remaining portion of the original film from which the individual pieces were obtained (the edge near the processed portion, etc.).
- reaction rate (curing rate) of the curable resin composition after 10 minutes from heating the transfer of the conductive particle-containing film by the laser lift-off method from 40 ° C. to 80 ° C. is preferably 25% or less, more preferably. is 20% or less, more preferably 15% or less, so that there is time to place and connect a large number of minute parts, so that the manufacturing conditions are relaxed, contributing to stable productivity. There is expected.
- the reaction rate after transfer of the conductive particle-containing film is, for example, using FT-IR, before and after laser irradiation in the laser lift-off method, epoxy group (near 914 cm -1 ), (meth) acryloyl group (near 1635 cm -1 ), etc.
- epoxy group near 914 cm -1
- (meth) acryloyl group near 1635 cm -1
- the reduction rate of the reactive group can be obtained by the following equation.
- Reaction rate (%) ⁇ 1-(a/b)/(A/B) ⁇ 100
- A is the peak height of the reactive group before laser irradiation
- B is the peak height of the control before laser irradiation
- a is the peak height of the reactive group after laser irradiation
- b is the control peak after laser irradiation. Height.
- FT-IR measurement it is preferable to set the sample to an IR detector with a film thickness of 10 ⁇ m or less, sandwiched between diamond cells. Moreover, in order to improve the detection sensitivity, it is preferable to cool the IR detector in advance with liquid nitrogen for about 30 minutes.
- FT-IR measurement conditions are, for example, as follows. Measurement method: Transmission type Measurement temperature: 25°C Measurement humidity: 60% or less Measurement time: 12 sec Spectral range of detector: 4000-700 cm -1
- the peak height of the reactive group of the completely cured (100% reaction rate) sample should be set to 0%.
- the reaction rate is calculated by the following formula using HPLC (High Performance Liquid Chromatography).
- Reaction rate (%) ⁇ 1-c/C ⁇ x 100
- C is the peak height or area of the reactive component before laser irradiation
- c is the peak height or area of the reactive component after laser irradiation.
- singulation may be performed by laser ablation, a laser lift-off method (laser lift method), or other known methods.
- the adhesive strength of the conductive particle-containing film 10 is determined, for example, by sticking a small piece of the conductive particle-containing film (for example, 0.3 to 1.0 mm wide and 2 cm long) having a release film on one side to the glass substrate. It can be measured by performing a peeling test in which the edge of the peeling film is picked up with tweezers and removed. In this peeling test, when the conductive particle-containing film remains adhered to the glass as success, the n number is 20 or more, preferably 30 or more, and the success rate is preferably 75% or more, preferably 80%. 90% or more is more preferable, and 95% or more is particularly preferable. Since the adhesive force is maintained with high accuracy, the surface of the conductive particle-containing film maintains the holding force necessary for mounting microelectronic parts.
- this adhesive strength be maintained during the temporary attachment process and the overlapping process.
- the adhesive force can be measured according to JIS Z 0237, as described in JP-A-2019-214714, and can also be measured by a probe method according to JIS Z 3284-3 or ASTM D 2979-01. It can also be measured as tack force by
- a probe method for each surface of the conductive particle-containing film For example, the tack force is measured at a probe pressing speed of 30 mm / min, a pressure of 196.25 gf, a pressure time of 1.0 sec, a peeling speed of 120 mm / min, and a measurement temperature of 23 ° C ⁇ 5 ° C.
- At least one of the front and back surfaces can be 1.0 kPa (0.1 N/cm 2 ) or more, preferably 1.5 kPa (0.15 N/cm 2 ) or more, and 3 kPa (0.3 N). /cm 2 ) is more preferred.
- the adhesive strength of the conductive particle-containing film 10 can also be determined according to the adhesive strength test described in JP-A-2017-48358.
- a conductive particle-containing film is sandwiched between two glass plates, one glass plate is fixed, and the other glass plate is peeled off at a peeling speed of 10 mm / min and a test temperature of 50 ° C.
- the adhesive strength thus measured can be preferably 10 kPa (1 N/cm 2 ) or more, more preferably 100 kPa (10 N/cm 2 ) or more.
- the electronic component 1 to be thermocompressed is, for example, smaller than a general IC chip in length of the longest side of 600 ⁇ m or less, or an area of each electrode of 1000 ⁇ m 2 or less. can minimize the problem of misalignment in temporary press-bonding in the superimposition process even for electronic components of .
- the production method of the conductive particle-containing film 10 itself is not particularly limited, and can be obtained, for example, by the method described in Japanese Patent No. 6187665.
- the production method of the present invention generally includes a temporary attachment step of attaching a conductive particle-containing film 10 to a substrate 20, an electrode 2 of a fine electronic component 1, and a substrate 20 having an electrode corresponding to the electrode 2 of the electronic component 1.
- a step of superimposing via the conductive particle-containing film 10 (superposition step), while pressing the electronic component 1 and the substrate 20 superimposed via the conductive particle-containing film 10, curing the insulating resin of the conductive particle-containing film 10. It has a step of curing (pressure curing step).
- the number of electrodes of the electronic component 1 may be one or plural. It can be appropriately determined according to the use of the connection structure.
- the electronic component 1 and the substrate 20 stacked with the conductive particle-containing film 10 interposed therebetween are applied with a pressure smaller than that in the pressure curing step.
- a pre-pressurizing step may be provided in which the conductive particles are sandwiched between the electrodes of the electronic component 1 and the electrodes of the substrate 20 by applying pressure.
- first pressurization the pressurization in the pre-pressurization step
- second pressurization the pressurization in the pressurization and curing step
- the production method of the present invention can have preliminary or additional steps as necessary.
- a manufacturing method including a temporary bonding process, a superimposing process, a pre-pressing process and a pressure curing process will be described.
- a case of connecting the attached semiconductor component to the substrate 20 will be described.
- the dicing tape 3 may be replaced with a stamp material for transfer, an adhesive film, a base film with an adhesive layer, or the like.
- a plurality of electronic components can be connected at once, and as will be described later, the first pressurization and the second pressurization are performed using a pressurization device.
- the dicing tape 3 is separated from the electronic component 1 to expose the electrodes 2 of the electronic component 1 as shown in FIG. 3B.
- the release film 4 it is preferable to use a film having an adhesive force to the electronic component 1 that is smaller than the adhesive force of the conductive particle-containing film 10 to the electronic component 1 .
- a plurality of electronic components 1 are connected to the substrate 20 at the same time. You don't have to. It may be connected individually, may be selectively connected in multiple pieces in the whole, or may be connected as a whole.
- the conductive particle-containing film 10 is placed on the surface of the substrate 20 on which the electrodes 21 are formed, and temporarily adhered.
- the insulating resin layer 12 as the conductive particle-containing film 10 is a thermosetting high-viscosity resin layer 13 holding the conductive particles 11 and a low-viscosity resin layer laminated on the high-viscosity resin layer 13. 14 of two-layer construction is used. Further, in the conductive particle-containing film 10 shown in FIG.
- the amount of protrusion on the low-viscosity resin layer 14 side is smaller than the amount of protrusion on the high-viscosity resin layer 13 side, and the conductive particles 11 are substantially held by the high-viscosity resin layer 13 . I am using what I have.
- JP-A-2017-098126 may be applied to selectively arrange the non-defective portion of the conductive particle-containing film 10 on the substrate 20.
- the electrodes 2 of the electronic component 1 and the electrodes 21 of the substrate 20 are aligned.
- a known technique can be used as the alignment method, and there is no particular limitation.
- the insulating resin layer 12 does not start curing before the alignment is completed, so it is possible to perform the alignment precisely.
- a method of arranging the conductive particle-containing film 10 on the electrode 21 of the substrate 20, and aligning and arranging the electrode 2 of the electronic component 1 on the conductive particle-containing film 10 arranged on the electrode 21 of the substrate 20 As a method, for example, a known laser lift-off method (for example, JP-A-2017-157724) or according thereto, the conductive particle-containing film 10 is irradiated with a laser beam, and the conductive particle-containing film 10 corresponds to the electrode 21.
- a known laser lift-off method for example, JP-A-2017-157724
- a piece-like film having an area may be detached and landed on the electrodes 21 , and the electronic components 1 formed vertically and horizontally on the translucent substrate may be irradiated with a laser beam so that the electronic components 1 are connected to the electrodes of the substrate 20 .
- the droplets may be landed on the conductive particle-containing film on 21 while being aligned.
- the laser lift-off method can be performed using a commercially available laser lift-off device (for example, Shin-Etsu Chemical Co., Ltd. laser lift-off device, trade name “Invisi LUM-XTR”).
- the conductive particle-containing film 10 may be transferred to the electrode 2 of the electronic component 1 or the electrode 21 of the substrate 20 by a transfer method using a known stamp material (for example, JP-A-2021-141160).
- a known stamp material for example, JP-A-2021-141160
- individual pieces of the conductive particle-containing film may be landed on the substrate by the laser lift-off method described above, and ⁇ LED may be landed on the conductive particle-containing film.
- the size of the individual piece of the conductive particle-containing film is appropriately determined according to the size of the ⁇ LED and the electrode. It is also possible to connect several ⁇ LEDs in one piece.
- the substrate may have a silicone rubber layer, for example, in order to suppress deformation, destruction, displacement of the landing position, etc. of the electronic component.
- PDMS polydimethylsiloxane
- a conductive particle-containing film and electronic components such as ⁇ LEDs are provided or arranged on a silicone sheet such as a polydimethylsiloxane (PDMS) sheet by a laser lift-off method, and can be transferred to be placed on a substrate. That is, by transferring the state in which the conductive particle-containing film and the electronic component are provided on the silicone sheet to the substrate, the electronic component and the substrate can be superimposed. In other words, even when a conductive particle-containing film is provided or arranged on a substrate using a silicone sheet such as a polydimethylsiloxane (PDMS) sheet by the laser lift-off method, the silicone sheet can be used by the laser lift-off method.
- a silicone sheet such as a polydimethylsiloxane (PDMS) sheet by the laser lift-off method
- the electronic components such as ⁇ LEDs are provided or arranged on the conductive particle-containing film
- the electronic components such as ⁇ LEDs on the silicone sheet or the individualized conductive particle-containing film may be transferred. That is, the electronic parts and the substrate can be superimposed by transferring the electronic parts or the individually-divided conductive particle-containing film on the silicone sheet to the substrate.
- the conductive particle-containing film may be individualized.
- the laser lift-off method can be used in various modes in carrying out the superimposing process.
- the insulating resin layer 12 constituting the conductive particle-containing film 10 is blended with an inorganic filler such as a cushioning rubber material, silica, talc, titanium oxide, calcium carbonate, magnesium oxide, or the like.
- Durometer A rubber hardness (in accordance with JIS K 6253) is preferably 20 to 40, more preferably 20 to 35, still more preferably 20 to 30, and a temperature of 30 ° C in a dynamic viscoelasticity test using an indentation device.
- the storage elastic modulus at a frequency of 200 Hz is preferably 60 MPa or less.
- the storage elastic modulus of the insulating resin layer after laser irradiation at a temperature of 30°C and a frequency of 200 Hz is preferably 100 MPa or more, more preferably 2000 MPa or more. If the storage elastic modulus is too low, good electrical conductivity cannot be obtained, and connection reliability tends to decrease.
- the storage elastic modulus at a temperature of 30°C was measured in accordance with JIS K7244 in a tensile mode using a viscoelasticity tester (Vibron, A&D Co., Ltd.), for example, at a frequency of 11 Hz and a heating rate of 3°C/min. It can be measured under the measurement conditions.
- Pre-pressurization step (first pressurization)
- FIG. 6 This first pressurization is performed until the conductive particles 11 contained in the conductive particle-containing film 10 are sandwiched between the electrodes 2 of the electronic component 1 and the electrodes 21 of the substrate 20, as shown in FIG. .
- the first pressurization holds the conductive particles between the electrodes so that they do not move unnecessarily.
- the distance between the electrode 2 of the electronic component 1 and the electrode 21 of the substrate 20 can be set to 70% or more and 100% or less of the initial particle diameter of the conductive particles 11 sandwiched therebetween. preferable.
- the pressurization force in the first pressurization can be, for example, 0.5-15 MPa, preferably 2-8 MPa. This is appropriately adjusted according to the size of the conductive particles, compressibility (hardness), repulsive force, thickness of the resin layer, and the like.
- the temperature at the time of the first pressurization may be heated if necessary, but it is preferably below the starting temperature of the curing reaction of the conductive particle-containing film 10, usually 80 ° C. or lower, preferably 55 ° C. or lower, It is more preferable to set the temperature to 40° C. or less. There is no particular lower limit, and only pressure may be applied at room temperature (25° C. ⁇ 15° C.). That is, the temperature during the first pressurization can be the environmental temperature. This pre-pressurization step (first pressurization) may be omitted in some cases.
- the second pressurization is performed at a pressure higher than the first pressurization without reducing the pressurization force from the first pressurization.
- the applied pressure at this time can be 30 to 120 MPa, preferably 60 to 80 MPa. This pressure is adjusted according to the size of the conductive particles, compressibility (hardness), repulsive force, thickness of the resin layer, and the like. As a result, as shown in FIG. 8, the conductive particles 11 sandwiched between the electrodes 2 of the electronic component 1 and the electrodes 21 of the substrate 20 are pressed and flattened, and the electrical connection between these electrodes 2 and 21 is ensured. .
- the insulating resin layer 12 is cured to fix the conductive particles 11 sandwiched between the electrodes 2 of the electronic component 1 and the electrodes 21 of the substrate 20, thereby obtaining the connection structure 40 of the present invention. Therefore, when the insulating resin layer 12 is formed of a thermosetting resin, the temperature is raised in the pressure curing process. In this case, the heating is preferably performed in a short time using a pulse heater or the like. The rate of temperature rise is appropriately determined according to the curing characteristics of the insulating resin layer 12. For example, the temperature reached is 100° C. or higher, preferably 120° C. or higher, more preferably 150° C. or higher, and the time to press out is 4 seconds or longer. , preferably 7 seconds or more, more preferably 10 seconds or more. In addition, when the conductive particles are solder, the pressure curing process can be replaced with a reflow process.
- connection structure 40 shown in FIG The substrate 20 having the electrodes 21 corresponding to the electrodes 2 of is bonded with the cured product of the insulating resin layer 12 of the conductive particle-containing film 10, and the electrodes 2 of the electronic component 1 and the electrodes 21 of the substrate 20 are They are electrically connected by the conductive particles 11 sandwiched between them.
- the number of the conductive particles 11 sandwiched between the electrode 2 of the electronic component 1 and the electrode 21 of the substrate 20 is set to a pair of electrodes 2, 21 facing each other like a general anisotropic connection.
- the number may be 3 or more, but may be less than 3 or may be 1 as the conductive particles 11 positioned on the pair of electrodes 2 and 21 facing each other reliably contribute to conduction. Therefore, the number density of the conductive particles 11 in the conductive particle-containing film 10 is preferably a number density of 3 or more conductive particles 11 for the pair of electrodes 2 and 12 facing each other. Both less than 3 and 3 or more can be practically used as long as there is no short circuit.
- the conductive particle-containing film 10 was first placed on the substrate 20 in the alignment step, but in the present invention, the conductive particle-containing film 10 may be placed on the electronic component 1 first.
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Abstract
Description
電子部品と基板とを、絶縁性樹脂層に導電粒子が保持された導電粒子含有フィルムを介して重ね合わせる重ね合わせ工程、
導電粒子含有フィルムを介して重ね合わせた電子部品と基板とを加圧しつつ導電粒子含有フィルムの絶縁性樹脂層を硬化させる加圧硬化工程、
を有し、
前記導電粒子含有フィルムの硬化特性は、該導電粒子含有フィルムを40℃から80℃に加熱した場合の加熱開始から絶縁性樹脂層の硬化開始までの時間が10分以上である
製造方法を提供する。
本発明の方法で接続する電子部品は、例えば、個々の電極の面積が1000μm2以下、500μm2以下、更には200μm2以下、又は電子部品の最長辺の長さが600μm以下、300μm以下、150μm以下、更には50μm以下の微小な電子部品である。このような電子部品としては、一般的なドライバICをはじめとする各種IC、光半導体素子、熱電変換素子(ペルチェ素子)、スイッチング素子等の半導体部品や、圧電素子、抵抗器などをあげることができ、中でも光半導体素子として、チップの一辺が50~200μm程度のミニLEDやチップの一辺が50μm未満のμLEDをあげることができる。
本発明において電子部品1を接続する基板20としては、ガラス基板、プラスチック基板などの透明基板でもよく、不透明な基板でもよい。また、基板20としては、セラミック基板、リジットな樹脂基板、FPC等の公知の電子部品を挙げることができる。
図2Aは、本発明で使用する導電粒子含有フィルム10の一例の平面図であり、図2Bはその断面図である。導電粒子含有フィルム10では、導電粒子11が絶縁性樹脂層12に保持されている。
導電粒子含有フィルム10において絶縁性樹脂層12に保持されている導電粒子11としては、ニッケル、コバルト、銀、銅、金、パラジウムなどの金属粒子、ハンダなどの合金粒子、金属被覆樹脂粒子、表面に絶縁性微粒子が付着している金属被覆樹脂粒子などが挙げられる。2種以上を併用することもできる。中でも、金属被覆樹脂粒子が、接続された後に樹脂粒子が反発することで端子との接触が維持され易くなり、導通性能が安定する点から好ましい。また、導電粒子の表面には公知の技術によって、導通特性に支障を来さない絶縁処理が施されていてもよい。
導電粒子11の粒子径は、電極が微小でも1個以上の導電粒子が確実に各電極に捕捉されるようにするため、10μm未満とし、好ましくは4μm以下とする。一方、導電粒子11の電極への押し込み精度を上げる点から1μm以上が好ましく、2.5μm以上がより好ましい。ここで、粒子径は平均粒子径を意味する。導電粒子含有フィルム10における導電粒子11の平均粒子径は、平面画像又は断面画像から求めることができる。顕微鏡観察で200個以上の粒子径を測定することにより平均粒子径を求めても良い。また、導電粒子含有フィルムに含有させる前の原料粒子としての導電粒子の平均粒子径は湿式フロー式粒子径・形状分析装置FPIA-3000(マルバーン社)を用いて求めることができる。なお、導電粒子に絶縁性微粒子等の微粒子が付着している場合には、微粒子を含めない径を粒子径とする。
微細な電子部品の各電極で1個以上の導電粒子が確実に捕捉されるようにする点から、導電粒子含有フィルム10において導電粒子11は規則的に配列していることが好ましく、例えば、特許文献3に記載の導電粒子含有フィルムのように格子状に配列していることが好ましい。特に、電子部品1がウエハからダイシングされることで得られる場合、その電子部品1の辺に沿って電極が形成されることから、導電粒子11の配列は矩形状の格子配列であることが望ましい。図2Aに示した導電粒子含有フィルム10では導電粒子11が正方格子配列になっている。
導電粒子の個数密度の上限および下限は、接続する対象物により変更になるため特に制限はない。例えば、個数密度の下限については、30個/mm2以上、又は12000個/mm2以上、又は150000個/mm2以上とすることができ、個数密度の上限については、例えば、500000個/mm2以下、又は350000個/mm2以下、又は300000個/mm2以下とすることができる。
導電粒子含有フィルム10を構成する絶縁性樹脂層12は、単一の絶縁性樹脂層から構成されていてもよく、複数の絶縁性樹脂層の積層体から構成されていてもよい。例えば、導電粒子含有フィルム10の層構成としては、図2Bに示すように、絶縁性樹脂層12を最低溶融粘度の高い高粘度樹脂層13と最低溶融粘度の低い低粘度樹脂層14の積層体とし、高粘度樹脂層13に導電粒子11を保持させることが、導電粒子11の不要な流動を抑制する点から好ましい。この場合、高粘度樹脂層13の最低溶融粘度(A1)、低粘度樹脂層14の最低溶融粘度(A2)、これらの比(A1/A2)及びこれらの層厚は、特許6187665号公報、特開2018―81906号公報等に記載の公知の異方性導電フィルムと同様とすることができる。
絶縁性樹脂層12の層厚は、下限については、導電粒子の粒子径の好ましくは1倍以上、より好ましくは1.3倍以上、又は3μm以上とすることができる。また、上限については、導電粒子の粒子径の2倍以下又は20μm以下とすることができる。絶縁性樹脂層12が複数の絶縁性樹脂層の積層体から構成される場合は、積層体の厚みがこれらの範囲にあることが好ましい。
絶縁性樹脂層12を形成する樹脂組成物は、導電粒子含有フィルム10で接続する電子部品1や基板20の種類等に応じて適宜選択され、熱可塑性樹脂組成物、高粘度粘着性樹脂組成物、硬化性樹脂組成物から形成することができる。例えば、特許6187665号公報に記載の導電粒子含有フィルムの絶縁性樹脂層を形成する樹脂組成物と同様に、重合性化合物と重合開始剤から形成される硬化性樹脂組成物を使用することができる。この場合、重合開始剤としては熱重合開始剤を使用してもよく、光重合開始剤を使用してもよく、それらを併用してもよい。例えば、熱重合開始剤としてカチオン系重合開始剤、熱重合性化合物としてエポキシ樹脂を使用し、光重合開始剤として光ラジカル重合開始剤、光重合性化合物としてアクリレート化合物を使用する。熱重合開始剤として、熱アニオン系重合開始剤を使用してもよい。熱アニオン系重合開始剤としては、イミダゾール変性体を核としその表面をポリウレタンで被覆してなるマイクロカプセル型潜在性硬化剤を用いることが好ましい。
導電粒子含有フィルム10においては、絶縁性樹脂層12を形成する硬化性樹脂組成物の種類の選択、重合開始剤の濃度調整等により、該導電粒子含有電フィルム10を40℃から80℃に加熱した場合の加熱開始から絶縁性樹脂層12の硬化開始までの時間が10分以上、20分以上、さらには25分以上である。このことは、導電粒子含有フィルム10の絶縁性樹脂層12が40℃から80℃という温度範囲の加熱下におかれてから、該絶縁性樹脂層12が硬化開始するまでの時間が10分以上であることを意味する。
湿度40%RH、温度30℃の恒温恒湿室にて、一対の剥離フィルムが表裏両面に貼着している導電粒子含有フィルムの一方の面の剥離フィルムを剥離除去し、その面をガラス板に張り付け、そのガラス板を45℃に設定したホットプレート上に載置し、他方の面から導電粒子含有フィルムを押圧し、重ね合わせ工程に要される時間に対応した所定時間が経過した後にガラス板と導電粒子含有フィルムの積層物を冷却し、導電粒子含有フィルムに貼着している剥離フィルムを引き上げた場合に、ガラス板から導電粒子含有フィルムが剥がれるか否かを確認すればよい。ここで、ガラス板から導電粒子含有フィルムが剥がれた場合には、重ね合わせ工程に対応した所定時間では硬化が進まないことがわかる。よってこの間に電子部品と基板との高精度の位置合わせを行うことが可能となる。
示差走査熱量計(DSC)を用いて導電粒子含有フィルム10を昇温させた場合に計測されるピーク温度から反応開始時間を計測してもよい。この場合、一般的な重ね合わせ工程における加熱加圧条件(所謂、仮圧着条件。例えば、60~80℃、1~2秒、0.5~2MPa)の処理をしてから、DSCで温度変化を計測してもよい。
導電粒子含有フィルム10を40℃~80℃の温度範囲に加熱してから硬化開始までの時間が10分以上であることは、導電粒子含有フィルム10を40℃~80℃の温度範囲に加熱してから10分後の絶縁性樹脂層12の硬化率が25%以下、好ましくは20%以下であることにより判断してもよい。ここで、硬化率は硬化性樹脂組成物のFT-IRのチャートの特定ピークの高さの計測、DSCの発熱ピーク面積計測等から求めることができる。
式中、Aはレーザー照射前の反応基のピーク高さ、Bはレーザー照射前の対照のピーク高さ、aはレーザー照射後の反応基のピーク高さ、bはレーザー照射後の対照のピーク高さである。
測定方式:透過式
測定温度:25℃
測定湿度:60%以下
測定時間:12sec
検出器のスペクトル領域範囲:4000~700cm-1
式中、Cはレーザー照射前の反応性成分のピーク高さ又は面積、cはレーザー照射後の反応性成分のピーク高さ又は面積である。
図1に示したように、基板に接続する電子部品1が半導体加工用フィルム3に貼着されている場合、電子部品1に対する導電粒子含有フィルム10の粘着力を、電子部品1に対する半導体加工用フィルム3の粘着力よりも大きくし、電子部品1が半導体加工用フィルム3に貼着されている場合でも、導電粒子含有フィルム10を介した電子部品1と基板20との仮圧着を可能とすることが好ましい(図4~図6)。
本発明の製造方法は、概略、基板20に導電粒子含有フィルム10を貼る仮貼り工程、微細な電子部品1の電極2と、該電子部品1の電極2に対応した電極を有する基板20とを導電粒子含有フィルム10を介して重ね合わせる工程(重ね合わせ工程)、導電粒子含有フィルム10を介して重ね合わせた電子部品1と基板20とを加圧しつつ導電粒子含有フィルム10の絶縁性樹脂を硬化させる工程(加圧硬化工程)を有する。この製造方法により得られる接続構造体において、電子部品1の電極数は1個でも複数でもよい。接続構造体の用途に応じて適宜定めることができる。
本発明の方法では一度に複数個の電子部品を接続することができ、後述するように第1加圧及び第2加圧は加圧装置を用いて行うことができるが、加圧装置の推力限界を超えないように一度に接続する電子部品の数を調整し、電子部品をアライメントすることが好ましい。
アライメントした電子部品1と基板20とを、公知の手法に準じ例えば図5に示すように導電粒子含有フィルム10を介して重ね合わせて載置し、必要に応じて仮圧着し、必要であれば剥離フィルム4を剥離除去する。導電粒子含有フィルム10は予め個片化しておいてもよい。
プレ加圧工程では、図6に示すように、導電粒子含有フィルム10を介して重ね合わせた電子部品1と基板20に対し、加圧ツール30を用いて電子部品1側から加圧する。この第1加圧は、図7に示すように、電子部品1の電極2と基板20の電極21との間に、導電粒子含有フィルム10に含まれている導電粒子11が挟持されるまで行う。第1加圧では導電粒子が不用に移動しないように電極間で保持させている、と言い換えることもできる。第1加圧により、電子部品1の電極2と基板20の電極21との距離を、これらの間で挟持されている導電粒子11の当初の粒子径の70%以上100%以下にすることが好ましい。
加圧硬化工程では、第1加圧から加圧力を低減させることなく、第1加圧よりも高い圧力で第2加圧を行う。このときの加圧力は30~120MPa、好ましくは60~80MPaとすることができる。この加圧力は導電粒子の大きさ、圧縮率(硬度)、反発力、樹脂層の厚み等に応じて調整する。これにより図8に示すように、電子部品1の電極2と基板20の電極21で挟持された導電粒子11が押されて扁平化し、これらの電極2、21の電気的接続が確実に行われる。
2 電子部品の電極
3 半導体加工用フィルム、ダイシングテープ
4 剥離フィルム
10 導電粒子含有フィルム
11 導電粒子
12 絶縁性樹脂層
13 高粘度樹脂層
14 低粘度樹脂層
20 基板
21 基板の電極
30 加圧ツール
31 ステージ
40 接続構造体
Claims (12)
- 微細な電子部品と、該電子部品の電極に対応した電極を有する基板の対応する電極同士が電気的に接続されている接続構造体の製造方法であって、
電子部品と基板とを、絶縁性樹脂層に導電粒子が保持された導電粒子含有フィルムを介して重ね合わせる重ね合わせ工程、
導電粒子含有フィルムを介して重ね合わせた電子部品と基板とを加圧しつつ導電粒子含有フィルムの絶縁性樹脂層を硬化させる加圧硬化工程、
を有し、
前記導電粒子含有フィルムの硬化特性は、該導電粒子含有フィルムを40℃から80℃に加熱した場合の加熱開始から絶縁性樹脂層の硬化開始までの時間が10分以上である
製造方法。 - 重ね合わせ工程と加圧硬化工程との間に、導電粒子含有フィルムを介して重ね合わせた電子部品と基板とを、加圧硬化工程における加圧力より小さい加圧力で加圧することにより、電子部品の電極と基板の電極とで導電粒子を挟持するプレ加圧工程を有する請求項1記載の製造方法。
- 導電粒子含有フィルムをレーザーリフトオフ法で電子部品又は基板に保持する請求項1又は2記載の製造方法。
- 電子部品をレーザーリフトオフ法で基板上に重ね合わせる請求項1又は2記載の製造方法。
- 導電粒子含有フィルムを40℃から80℃に加熱した場合の加熱開始から絶縁性樹脂層の硬化開始までの時間を、電子部品と基板の重ね合わせ工程に要する時間等に応じて調整する請求項1又は2記載の製造方法。
- 導電粒子含有フィルムにおいて、導電粒子が規則的に配列している請求項1又は2記載の製造方法。
- 導電粒子含有フィルムにおける導電粒子は、各電極で1個以上3個未満の導電粒子が捕捉される粒子密度である請求項1又は2記載の製造方法。
- 絶縁性樹脂層が、最低溶融粘度の異なる2層の絶縁性樹脂層の積層体で形成されている請求項1又は2記載の製造方法。
- 電子部品が半導体部品である請求項1又は2記載の製造方法。
- 導電粒子含有フィルムを介して基板と重ね合わせる半導体部品が半導体加工用フィルムに貼着されている請求項9記載の製造方法。
- 半導体部品に対する導電粒子含有フィルムの粘着力が、半導体部品に対する半導体加工用フィルムの粘着力よりも大きい請求項10記載の製造方法。
- 最長辺の長さが600μm以下の電子部品又は個々の電極の面積が1000μm2以下の電子部品と、該電子部品の電極に対応した電極を有する基板が絶縁性樹脂で接着され、該電子部品と基板の対応する電極同士が、それらの間に挟持された1個以上3個未満の導電粒子によって電気的に接続されている接続構造体。
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09219579A (ja) * | 1996-02-13 | 1997-08-19 | Oki Electric Ind Co Ltd | 電子部品の接続方法及び接続装置 |
JP2005236256A (ja) * | 2003-09-12 | 2005-09-02 | Matsushita Electric Ind Co Ltd | コネクタシート及び配線基板、並びにコネクタシート及び配線基板の製造方法 |
JP2008069243A (ja) * | 2006-09-13 | 2008-03-27 | Nippon Avionics Co Ltd | 接着状態予測方法 |
JP2009007443A (ja) * | 2007-06-27 | 2009-01-15 | Sony Chemical & Information Device Corp | 接着フィルム |
JP2013143292A (ja) * | 2012-01-11 | 2013-07-22 | Sekisui Chem Co Ltd | 異方性導電フィルム材料、接続構造体及び接続構造体の製造方法 |
JP2015170721A (ja) * | 2014-03-06 | 2015-09-28 | デクセリアルズ株式会社 | 接続体の製造方法、電子部品の接続方法、アライメント方法及び接続体 |
JP2019015899A (ja) * | 2017-07-10 | 2019-01-31 | 株式会社ブイ・テクノロジー | 表示装置の製造方法、チップ部品の転写方法、および転写部材 |
JP2019216098A (ja) * | 2018-06-06 | 2019-12-19 | デクセリアルズ株式会社 | 接続体、接続体の製造方法、接続方法 |
JP2020145243A (ja) * | 2019-03-05 | 2020-09-10 | 東レエンジニアリング株式会社 | チップ転写板ならびにチップ転写方法、画像表示装置の製造方法および半導体装置の製造方法 |
WO2021100727A1 (ja) * | 2019-11-18 | 2021-05-27 | 三菱瓦斯化学株式会社 | ポリイミド樹脂、ポリイミドワニス及びポリイミドフィルム |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2012339938B2 (en) | 2011-11-18 | 2015-02-19 | Apple Inc. | Method of forming a micro led structure and array of micro led structures with an electrically insulating layer |
US9437782B2 (en) | 2014-06-18 | 2016-09-06 | X-Celeprint Limited | Micro assembled LED displays and lighting elements |
JP7052254B2 (ja) | 2016-11-04 | 2022-04-12 | デクセリアルズ株式会社 | フィラー含有フィルム |
-
2022
- 2022-09-20 WO PCT/JP2022/035026 patent/WO2023048148A1/ja active Application Filing
- 2022-09-20 KR KR1020247004000A patent/KR20240032918A/ko unknown
- 2022-09-21 TW TW111135740A patent/TW202321040A/zh unknown
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09219579A (ja) * | 1996-02-13 | 1997-08-19 | Oki Electric Ind Co Ltd | 電子部品の接続方法及び接続装置 |
JP2005236256A (ja) * | 2003-09-12 | 2005-09-02 | Matsushita Electric Ind Co Ltd | コネクタシート及び配線基板、並びにコネクタシート及び配線基板の製造方法 |
JP2008069243A (ja) * | 2006-09-13 | 2008-03-27 | Nippon Avionics Co Ltd | 接着状態予測方法 |
JP2009007443A (ja) * | 2007-06-27 | 2009-01-15 | Sony Chemical & Information Device Corp | 接着フィルム |
JP2013143292A (ja) * | 2012-01-11 | 2013-07-22 | Sekisui Chem Co Ltd | 異方性導電フィルム材料、接続構造体及び接続構造体の製造方法 |
JP2015170721A (ja) * | 2014-03-06 | 2015-09-28 | デクセリアルズ株式会社 | 接続体の製造方法、電子部品の接続方法、アライメント方法及び接続体 |
JP2019015899A (ja) * | 2017-07-10 | 2019-01-31 | 株式会社ブイ・テクノロジー | 表示装置の製造方法、チップ部品の転写方法、および転写部材 |
JP2019216098A (ja) * | 2018-06-06 | 2019-12-19 | デクセリアルズ株式会社 | 接続体、接続体の製造方法、接続方法 |
JP2020145243A (ja) * | 2019-03-05 | 2020-09-10 | 東レエンジニアリング株式会社 | チップ転写板ならびにチップ転写方法、画像表示装置の製造方法および半導体装置の製造方法 |
WO2021100727A1 (ja) * | 2019-11-18 | 2021-05-27 | 三菱瓦斯化学株式会社 | ポリイミド樹脂、ポリイミドワニス及びポリイミドフィルム |
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