WO2023277085A1 - はんだバンプ形成用部材 - Google Patents
はんだバンプ形成用部材 Download PDFInfo
- Publication number
- WO2023277085A1 WO2023277085A1 PCT/JP2022/026032 JP2022026032W WO2023277085A1 WO 2023277085 A1 WO2023277085 A1 WO 2023277085A1 JP 2022026032 W JP2022026032 W JP 2022026032W WO 2023277085 A1 WO2023277085 A1 WO 2023277085A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solder
- solder particles
- electrodes
- particles
- solder bump
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 288
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/742—Apparatus for manufacturing bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L2224/742—Apparatus for manufacturing bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81095—Temperature settings
- H01L2224/81096—Transient conditions
- H01L2224/81097—Heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
Definitions
- flip-chip mounting has become known as one of the methods for high-density mounting of electronic components.
- solder bumps are formed in advance on electrodes provided on one circuit member, and the electrodes of one circuit member and the electrodes of the other circuit member are joined by melting the solder bumps. Thereby, a connection structure between the circuit members is formed.
- the present disclosure has been made to solve the above problems, and an object thereof is to provide a solder bump forming member that can ensure the reliability of transferring solder particles to electrodes even if the shape of the solder particles is not uniform. do.
- an alignment mark 4 may be provided on the first surface 2a side of the body portion 2 .
- the alignment mark 4 is formed by, for example, an uneven shape provided on the first surface 2a of the main body 2, printing with ink or pigment, printing of an inorganic material by plating or sputtering, baking with laser, or the like.
- the alignment mark 4 has, for example, a circular shape, a double circular shape, a multiple circular shape, a triangular shape, a rectangular shape, a polygonal shape, or a multiple polygonal shape thereof in plan view.
- the alignment mark 4 may be made of a magnetic material or a material that absorbs, reflects, or diffracts electromagnetic waves, and the shape in this case is not particularly limited.
- the width of the partition wall 8 (the distance between the adjacent recesses 3, 3) is not particularly limited, but can be, for example, 0.1 times or more the average particle diameter of the solder particles held in the recesses 3. .
- the width of the partition wall 8 may be 0.2 times or more, or 0.3 times or more the average particle diameter of the solder particles held in the recesses 3 .
- the distance between the recesses 3, 3 is defined by the shortest distance between the opening edge of one recess 3 and the opening edge of the other recess 3, for example.
- Examples of the elastic body 9 forming the deformable portion 6 include a photocurable material, a thermosetting material, and a thermoplastic material.
- Examples of the elastic body 9 forming the deformable portion 6 include resin, polymer, rubber, elastomer, and mixtures thereof.
- the elastic body 9 constituting the deformation portion 6 may be polyethylene terephthalate (volume modulus at melting point: 0.6 GPa) or acrylic (melting point: 0.6 GPa). Bulk modulus: 1 GPa) and PMMA (bulk modulus at melting point: 1 GPa) can be used.
- solder particles S1 is SnAgCu (melting point: 217° C.)
- polyimide volume modulus at melting point: 1 GPa
- the elastic body 9 forming the deformable portion 6 can be used as the constituent material of the solder particles S1 .
- the constituent material of the solder particles S1 is SnAgCu (melting point: 217° C.)
- the constituent material of the base portion 7 is, for example, glass (volume modulus at melting point: 40 GPa), silicon wafer (volume modulus at melting point: 40 GPa), stainless steel (volume modulus at melting point: 165 GPa), and aluminum (volume modulus at melting point: 75 GPa) can be used.
- the ratio of the height of the solder particles S1 to the depth D of the concave portion 3 is not particularly limited, but considering the amount of deformation of the deformable portion 6 in the compression direction, it may be 0.3 to 1.5, for example. By setting the ratio to 0.3 or more, it is possible to more reliably bring the electrode and the solder particles S1 into contact when the electrode is pressed. By setting the ratio to 1.5 or less, it is possible to suitably prevent the solder particles S1 from dropping out of the recesses 3 . In addition, it is possible to prevent the solder particles S1 from protruding from the concave portions 3 during transfer, and to prevent the solder particles S1 from bonding to each other between the adjacent concave portions 3,3.
- the ratio of the height of the solder particles S1 to the depth D of the recesses 3 may be 0.5-1.2, or may be 0.6-1.
- the average particle size of the solder particles S1 is, for example, 35 ⁇ m or less.
- the average particle size of the solder particles S1 may be 30 ⁇ m or less, 25 ⁇ m or less, 20 ⁇ m or less, or 15 ⁇ m or less.
- the average particle size of the solder particles S1 is, for example, 1 ⁇ m or more.
- the average particle size of the solder particles S1 may be 2 ⁇ m or more, 3 ⁇ m or more, or 5 ⁇ m or more.
- FIG. 3 is a schematic cross-sectional view showing an example of the configuration of the connection structure.
- the connection structure 41 is configured by electrically connecting the electrodes 22 of one circuit member 21 and the electrodes 32 of the other circuit member 31 via solder bumps S2.
- the space between one circuit member 21 and the other circuit member 21 is filled with an underfill material 42 whose main ingredient is, for example, epoxy resin.
- the underfill material 42 is formed to cover the electrodes 22 and 32 and the solder bumps S2 between the electrodes 22 and 32, for example.
- connection structure 41 includes connection portions for semiconductor memories, semiconductor logic chips, etc., connection portions for primary and secondary mounting of semiconductor packages, junctions for CMOS image elements, laser elements, LED light emitting elements, and the like. devices such as cameras, sensors, liquid crystal displays, personal computers, mobile phones, smart phones, and tablets using
- step S02 the solder particles S1 held in the recesses 3 and the electrodes 22 of the circuit member 21 are arranged to face each other (step S02).
- step S02 the stage 12 is displaced while the circuit member 21 is attracted to the heating and pressurizing head 16, and as shown in FIG. .
- the position of the alignment mark 4 on the side of the solder bump forming member 1 is confirmed by the imaging device 15A, and the position of the alignment mark on the side of the circuit member 21 is confirmed by the imaging device 15B.
- the solder particles S1 and the electrodes 22 of the circuit member 21 are aligned.
- the pressing force of the electrode 22 against the solder bump forming member 1 by the heating and pressurizing head 16 is, for example, 0.1 MPa to 600 MPa.
- This applied pressure may be 1 MPa to 300 MPa, or may be 10 MPa to 100 MPa.
- step S02 or between steps S02 and S03 a step of exposing at least one of the solder particles S1 and the electrodes 22 to a reducing atmosphere may be further included.
- a step of exposing at least one of the solder particles S1 and the electrodes 22 to a reducing atmosphere may be further included.
- the process of step S03 may be performed in a reducing atmosphere.
- hydrogen gas, hydrogen radicals, formic acid gas, etc. can be used to form the reducing atmosphere.
- a hydrogen reduction furnace, a hydrogen reflow furnace, a hydrogen radical furnace, a formic acid furnace, a vacuum furnace of these, a continuous furnace, a conveyor furnace, or the like can be used.
- connection structure 41 is formed.
- the other circuit member 31 is supplied toward the second implementation region R3 (step S04).
- the circuit member 31 is supplied from the third supply unit 17 to the second implementation region R3 so that the electrode 32 faces upward.
- An underfill material 42 may be arranged so as to cover the electrodes 32 in the circuit member 31 supplied to the second implementation region R3.
- step S05 the circuit member 21A with solder bumps and the circuit member 31 are arranged to face each other (step S05).
- step S05 as shown in FIG. 8, the stage 12 is displaced while the circuit member 21A with solder bumps is attracted to the heating and pressurizing head 16, and the circuit member 21A with solder bumps is placed on the second implementation area R3. do.
- the position of the alignment mark on the circuit member 31 side is confirmed by the imaging device 15A, and the position of the alignment mark on the circuit member 21A with solder bumps is confirmed by the imaging device 15B. and the electrode 32 of the circuit member 31 are aligned.
- the deformation portion 6 is deformed in the compression direction by applying heat by pressing the electrode 22, and the electrode 22 of the circuit member 21 contacts the solder particles S1 in a state of entering the recess 3.
- the height of the solder bumps S2 formed on the electrodes 22 can be made uniform within a certain range.
- solder particles S1 are arranged singly in each of the plurality of recesses 3. As a result, the solder particles S1 having a relatively large particle size can be transferred to the electrodes 22 with a certain degree of certainty.
- an alignment mark 4 is provided on the first surface 2a side of the body portion 2 . This facilitates alignment between the solder particles S1 held in the recesses 3 and the electrodes 22 . Therefore, the solder particles S1 can be formed at the target positions on the electrodes 22 with higher accuracy.
- the deformable portion 6 does not extend beyond the depth of the recess 3 from the first surface 2a. It may be provided with a thickness of 1/2 or more of the depth D of the recess 3 in the depth direction. In this case, the deformation portion 6 may be provided with a thickness of 3/5 or more of the depth D of the recess 3 in the depth direction of the recess 3 from the first surface 2a, or a thickness of 4/5 or more. It may be provided at
- none of the solder particles S1 protrude outward from the opening surface of the recess 3, but the present disclosure does not require the heights of the solder particles S1 in the recess 3 to be uniform. Some or all of the solder particles S1 may protrude outward from the opening surface of the recess 3 in order to ensure the transfer of the solder particles S1 to the recess 3 with certainty. That is, as shown in FIG. 11A, the height H of some or all of the solder particles S1 may satisfy H>D with respect to the depth D of the recesses 3 .
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Abstract
Description
[はんだバンプ形成用部材の構成]
[はんだバンプ形成装置]
[接続構造体]
[はんだバンプ形成方法]
[本開示の作用効果]
[変形例]
Claims (6)
- 回路部材の電極へのはんだバンプの形成に用いられるはんだバンプ形成用部材であって、
第1面及び前記第1面と反対側の第2面を有する本体部を備え、
前記本体部において、
前記第1面側には、はんだ粒子が保持される複数の凹部が設けられ、
前記第1面を含む前記凹部の構成部分は、前記はんだ粒子の融点において変形可能な変形部を有しているはんだバンプ形成用部材。 - 前記変形部は、前記第1面から前記凹部の深さ方向に、当該凹部の深さの1/2以上の厚さで設けられている請求項1記載のはんだバンプ形成用部材。
- 前記本体部の前記第2面側には、前記はんだ粒子の融点において前記変形部よりも高い体積弾性率を有する基体部が設けられている請求項1又は2記載のはんだバンプ形成用部材。
- 前記複数の凹部のそれぞれに前記はんだ粒子が単体で配置されている請求項3記載のはんだバンプ形成用部材。
- 前記複数の凹部のそれぞれに前記はんだ粒子が複数配置されている請求項3記載のはんだバンプ形成用部材。
- 前記本体部の前記第1面側には、アライメントマークが設けられている請求項1~5のいずれか一項記載のはんだバンプ形成用部材。
Priority Applications (3)
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JP2023532034A JPWO2023277085A1 (ja) | 2021-06-30 | 2022-06-29 | |
KR1020247002225A KR20240027706A (ko) | 2021-06-30 | 2022-06-29 | 땜납 범프 형성용 부재 |
CN202280045732.5A CN117581342A (zh) | 2021-06-30 | 2022-06-29 | 焊料凸块形成用部件 |
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JP2021-108630 | 2021-06-30 | ||
JP2021108630 | 2021-06-30 |
Publications (1)
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WO2023277085A1 true WO2023277085A1 (ja) | 2023-01-05 |
Family
ID=84691854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2022/026032 WO2023277085A1 (ja) | 2021-06-30 | 2022-06-29 | はんだバンプ形成用部材 |
Country Status (5)
Country | Link |
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JP (1) | JPWO2023277085A1 (ja) |
KR (1) | KR20240027706A (ja) |
CN (1) | CN117581342A (ja) |
TW (1) | TW202318605A (ja) |
WO (1) | WO2023277085A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139427A (ja) * | 1994-11-04 | 1996-05-31 | Mitsubishi Electric Corp | 球状電極の形成方法 |
JPH09246324A (ja) * | 1996-03-08 | 1997-09-19 | Hitachi Ltd | 電子部品及びそのバンプ形成方法 |
JP2006216702A (ja) * | 2005-02-02 | 2006-08-17 | Tdk Corp | 半田ボールの転写方法及び転写装置 |
JP2014082362A (ja) * | 2012-10-17 | 2014-05-08 | Mitsubishi Electric Corp | 電子機器の製造方法 |
JP2016172912A (ja) * | 2015-03-18 | 2016-09-29 | 三菱マテリアル株式会社 | ハンダ粉末の製造方法及びこの粉末を用いたハンダ用ペースト |
JP2018206953A (ja) * | 2017-06-05 | 2018-12-27 | 三菱マテリアル株式会社 | はんだバンプ形成方法及びはんだペースト |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017157626A (ja) | 2016-02-29 | 2017-09-07 | 三菱マテリアル株式会社 | はんだバンプの形成方法 |
-
2022
- 2022-06-29 JP JP2023532034A patent/JPWO2023277085A1/ja active Pending
- 2022-06-29 CN CN202280045732.5A patent/CN117581342A/zh active Pending
- 2022-06-29 WO PCT/JP2022/026032 patent/WO2023277085A1/ja active Application Filing
- 2022-06-29 KR KR1020247002225A patent/KR20240027706A/ko unknown
- 2022-06-29 TW TW111124292A patent/TW202318605A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139427A (ja) * | 1994-11-04 | 1996-05-31 | Mitsubishi Electric Corp | 球状電極の形成方法 |
JPH09246324A (ja) * | 1996-03-08 | 1997-09-19 | Hitachi Ltd | 電子部品及びそのバンプ形成方法 |
JP2006216702A (ja) * | 2005-02-02 | 2006-08-17 | Tdk Corp | 半田ボールの転写方法及び転写装置 |
JP2014082362A (ja) * | 2012-10-17 | 2014-05-08 | Mitsubishi Electric Corp | 電子機器の製造方法 |
JP2016172912A (ja) * | 2015-03-18 | 2016-09-29 | 三菱マテリアル株式会社 | ハンダ粉末の製造方法及びこの粉末を用いたハンダ用ペースト |
JP2018206953A (ja) * | 2017-06-05 | 2018-12-27 | 三菱マテリアル株式会社 | はんだバンプ形成方法及びはんだペースト |
Also Published As
Publication number | Publication date |
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TW202318605A (zh) | 2023-05-01 |
JPWO2023277085A1 (ja) | 2023-01-05 |
CN117581342A (zh) | 2024-02-20 |
KR20240027706A (ko) | 2024-03-04 |
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