WO2023048148A1 - Procédé de fabrication de structure de connexion - Google Patents

Procédé de fabrication de structure de connexion Download PDF

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Publication number
WO2023048148A1
WO2023048148A1 PCT/JP2022/035026 JP2022035026W WO2023048148A1 WO 2023048148 A1 WO2023048148 A1 WO 2023048148A1 JP 2022035026 W JP2022035026 W JP 2022035026W WO 2023048148 A1 WO2023048148 A1 WO 2023048148A1
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WIPO (PCT)
Prior art keywords
containing film
conductive particle
substrate
electronic component
resin layer
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PCT/JP2022/035026
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English (en)
Japanese (ja)
Inventor
慎一 林
怜司 塚尾
誠一郎 篠原
雄介 田中
Original Assignee
デクセリアルズ株式会社
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Application filed by デクセリアルズ株式会社 filed Critical デクセリアルズ株式会社
Priority to CN202280062255.3A priority Critical patent/CN117941045A/zh
Priority to KR1020247004000A priority patent/KR20240032918A/ko
Priority claimed from JP2022149425A external-priority patent/JP2023046305A/ja
Publication of WO2023048148A1 publication Critical patent/WO2023048148A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81053—Bonding environment
    • H01L2224/81091—Under pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/8185—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/81855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/81862—Heat curing

Definitions

  • the present invention relates to a method of manufacturing a connection structure that reliably electrically connects minute electronic components that are difficult for humans to handle manually onto a substrate.
  • Fine electronic components have been developed for display applications, for example (Patent Documents 1 and 2). Such minute electronic components are generally manufactured by being separated from a wafer using a dicing tool, and mounted by wire bonding or the like on a glass substrate on which a driver circuit is formed.
  • a conductive particle-containing film in which conductive particles are held in an insulating resin layer is used.
  • the conductive particle-containing film exhibits conductivity only in the film thickness direction, and is therefore also called an anisotropic conductive film.
  • the ratio of the thickness of the insulating resin layer and the particle size of the conductive particles in the conductive particle-containing film is specified.
  • Patent Document 3 Patent Document 4
  • Even micro-sized electronic parts having an electrode area of about 1000 ⁇ m 2 (eg, 100 ⁇ 10 ⁇ m) in electrode rows such as bumps formed on the electronic parts, and even micro-sized semiconductor electrodes can be used. Even if there is, it can be connected to the substrate using a film containing conductive particles.
  • the number of conductive particles captured in one electrode is 3 or more, preferably 10 or more, from the viewpoint of the stability of electrical properties. is required.
  • the electrodes themselves are miniaturized. There are situations where it is necessary to be able to do things that are not possible with conventional anisotropic conductive connection specifications, such as 1-3 trapped conductive particles per electrode.
  • a laminating step a step of stacking electronic components on a conductive particle-containing film provided on a substrate, pressing the electronic component against the substrate through the conductive particle-containing film, and adding an insulating resin layer of the conductive particle-containing film.
  • the difficulty of the connection process which consists of a curing process that completes the connection of electronic components by pressure curing or heat and pressure curing, increases the difficulty, requires a long time for precise connection, and prevents insulation before the connection is completed. There is a concern that curing of the resin layer may progress unnecessarily.
  • the present invention provides a film containing conductive particles so that fine electronic parts having an area of each electrode of 1000 ⁇ m 2 or less or a length of the longest side of the electronic part of 600 ⁇ m or less and a substrate can be precisely and reliably connected.
  • the task is to
  • the present inventor provides a conductive particle-containing film on a substrate, superimposes a fine electronic component and a substrate via the conductive particle-containing film, and pressurizes the superimposed electronic component and the substrate while insulating the conductive particle-containing film.
  • the resin layer is cured and connected, if the insulating resin layer of the conductive particle-containing film is heated from 40 ° C. to 80 ° C., it takes 10 minutes or more from the start of heating to the start of curing.
  • the inventors have found that the insulating resin layer can be prevented from starting to harden unnecessarily during the period from attachment to connection, and the electronic component and the substrate can be connected precisely and reliably, thereby completing the present invention.
  • the present invention provides a method for manufacturing a connection structure in which a fine electronic component and corresponding electrodes of a substrate having electrodes corresponding to the electrodes of the electronic component are electrically connected to each other, A superposition step of superimposing the electronic component and the substrate via a conductive particle-containing film in which the conductive particles are held on the insulating resin layer, A pressure curing step of curing the insulating resin layer of the conductive particle-containing film while pressing the electronic component and the substrate superimposed via the conductive particle-containing film, has The curing property of the conductive particle-containing film provides a production method in which the time from the start of heating to the start of curing of the insulating resin layer when the conductive particle-containing film is heated from 40° C. to 80° C. is 10 minutes or more. .
  • a fine electronic component and a substrate having electrodes corresponding to the electrodes of the electronic component are adhered with an insulating resin, and the corresponding electrodes of the electronic component and the substrate are sandwiched between them.
  • a connection structure electrically connected by one or more but less than three conductive particles.
  • the conductive particle-containing film a film in which the time from the start of heating to the start of curing of the insulating resin layer when the conductive particle-containing film is heated from 40° C. to 80° C. is 10 minutes or more is used. Therefore, the conductive particle-containing film is provided on the substrate, the fine electronic article is superimposed on the substrate through the conductive particle-containing film, and the insulating resin layer is cured under pressure. is prevented. Therefore, it is possible to accurately connect even minute electronic components with individual electrodes having an area of 1000 ⁇ m 2 or less or having a longest side length of 600 ⁇ m or less to the substrate.
  • FIG. 1 is a cross-sectional view of a semiconductor component held on a semiconductor processing film.
  • FIG. 2A is a plan view showing particle arrangement of a conductive particle-containing film.
  • FIG. 2B is a cross-sectional view of a film containing conductive particles.
  • FIG. 3A is a cross-sectional view showing a state in which a release film is attached to a semiconductor component on a semiconductor processing film.
  • FIG. 3B is a cross-sectional view of a state in which the film for semiconductor processing is peeled off from the semiconductor component.
  • FIG. 4 is a cross-sectional view showing a state in which the conductive particle-containing film arranged on the substrate is aligned with the semiconductor component attached to the release film.
  • FIG. 5 is a cross-sectional view showing a state in which a semiconductor component and a substrate are overlaid with a conductive particle-containing film interposed therebetween, and the release film is peeled off.
  • FIG. 6 is a cross-sectional view showing a state in which the semiconductor component and the substrate from which the release film has been peeled are pressed from the semiconductor component side with a pressure tool.
  • FIG. 7 is a cross-sectional view of a state in which the conductive particles are sandwiched between the electrode of the semiconductor component and the electrode of the substrate by the first pressurization.
  • FIG. 8 is a cross-sectional view of a state in which the electrode of the semiconductor component and the electrode of the substrate are electrically connected by the second pressurization.
  • connection structure of the present invention The method for manufacturing the connection structure of the present invention will be described in detail below with reference to the drawings.
  • symbol represents the same or equivalent component.
  • each electrode has an area of 1000 ⁇ m 2 or less, 500 ⁇ m 2 or less, further 200 ⁇ m 2 or less, or the electronic component has a longest side length of 600 ⁇ m or less, 300 ⁇ m or less, or 150 ⁇ m.
  • it is a minute electronic component of 50 ⁇ m or less.
  • Examples of such electronic parts include various ICs including general driver ICs, semiconductor parts such as optical semiconductor elements, thermoelectric conversion elements (Peltier elements), switching elements, piezoelectric elements, and resistors.
  • ICs including general driver ICs, semiconductor parts such as optical semiconductor elements, thermoelectric conversion elements (Peltier elements), switching elements, piezoelectric elements, and resistors.
  • a mini-LED whose one side of the chip is about 50 to 200 ⁇ m and a ⁇ LED whose one side of the chip is less than 50 ⁇ m can be mentioned.
  • FIG. 1 is a cross-sectional view of a state in which a plurality of semiconductor components are held by a semiconductor processing film 3 as an example of electronic components 1 connected by the method of the present invention.
  • the semiconductor processing film 3 includes known dicing tapes, die bonding tapes, release films, and the like.
  • the plurality of electrodes on the electrode forming surface of the electronic component 1 have the same height when connecting to the electrodes of the substrate.
  • the electronic component 1 to be connected by the method of the present invention is fine, for example, the area of each electrode is 1000 ⁇ m 2 or less, 500 ⁇ m 2 or less, further 200 ⁇ m 2 or less, or the length of the longest side of the electronic component 1 is 600 ⁇ m or less, 300 ⁇ m or less, 150 ⁇ m or less, or even 50 ⁇ m or less.
  • the shortest side of the electronic component 1 must be of a size that ensures that at least one conductive particle is sandwiched between each electrode. is preferred. Therefore, it is preferable that the shortest side of the electronic component 1 connected by the method of the present invention is 5 ⁇ m or more.
  • the preferred thickness of the electronic component 1 to be connected by the method of the present invention varies depending on the material and strength of the electronic component 1, the height of the electrodes, connection conditions, etc. 2 or less, or if the length of the longest side of the electronic component is 600 ⁇ m or less, the thickness can be 200 ⁇ m or less, or even 50 ⁇ m or less, and if the length of the longest side is 300 ⁇ m or less, the thickness can be 50 ⁇ m or less. When the length of the longest side is 150 ⁇ m or less, the thickness can be 30 ⁇ m or less; In particular, it can be 10 ⁇ m or less.
  • the thickness does not include the height of the electrodes used for electrical connection via the conductive particles.
  • the height of the electrodes 2 of the electronic component 1 may be substantially zero.
  • the height of the electrode 2 is preferably higher than 1 times the average particle size of the conductive particles so that the conductive particles can be efficiently pushed into the electrodes by pressurization.
  • the height of the electrode 2 is excessively high, the amount of resin filled between the electrodes will be unnecessarily large. preferable.
  • it is preferably 10 ⁇ m or less, more preferably 6 ⁇ m or less.
  • FIG. 1 shows an example in which the semiconductor component 1 held by the semiconductor processing film 3 is used as an example. It does not have to be held on the film for use.
  • the substrate 20 for connecting the electronic component 1 may be a transparent substrate such as a glass substrate or a plastic substrate, or may be an opaque substrate.
  • known electronic components such as a ceramic substrate, a rigid resin substrate, and an FPC can be used.
  • FIG. 2A is a plan view of an example of the conductive particle-containing film 10 used in the present invention
  • FIG. 2B is a cross-sectional view thereof.
  • the conductive particles 11 are held by the insulating resin layer 12 .
  • the conductive particles 11 held in the insulating resin layer 12 in the conductive particle-containing film 10 include metal particles such as nickel, cobalt, silver, copper, gold, and palladium; alloy particles such as solder; metal-coated resin particles; and metal-coated resin particles having insulating fine particles attached to them. Two or more types can also be used together. Among them, the metal-coated resin particles are preferable because the resin particles repel each other after being connected, thereby making it easy to maintain contact with the terminal and stabilizing the conduction performance. Moreover, the surface of the conductive particles may be subjected to an insulating treatment by a known technique so as not to interfere with the conductive properties.
  • the particle size of the conductive particles 11 is set to less than 10 ⁇ m, preferably 4 ⁇ m or less, so that one or more conductive particles can be reliably captured by each electrode even if the electrodes are very small.
  • the thickness is preferably 1 ⁇ m or more, more preferably 2.5 ⁇ m or more, from the viewpoint of increasing the precision with which the conductive particles 11 are pushed into the electrode.
  • the particle size means the average particle size.
  • the average particle size of the conductive particles 11 in the conductive particle-containing film 10 can be obtained from a planar image or a cross-sectional image. The average particle size may be obtained by measuring the particle size of 200 or more particles by microscopic observation.
  • the conductive particles 11 are arranged regularly in the conductive particle-containing film 10 in order to ensure that one or more conductive particles are captured by each electrode of a fine electronic component. It is preferable that they are arranged in a lattice like the conductive particle-containing film described in Document 3. In particular, when the electronic component 1 is obtained by dicing from a wafer, electrodes are formed along the sides of the electronic component 1, so the array of the conductive particles 11 is desirably a rectangular lattice array. . In the conductive particle-containing film 10 shown in FIG. 2A, the conductive particles 11 are arranged in a square lattice.
  • the conductive particle-containing film a film in which the conductive particles are evenly and randomly dispersed may be used.
  • the conductive particles 11 may be embedded in the insulating resin layer 12 or may be exposed. It is preferable that the positions of the conductive particles 11 in the film thickness direction are uniform, and that they are unevenly distributed on one side of the conductive particle-containing film. By being unevenly distributed on one side, pressing is performed evenly, and unexpected movement of particles can be suppressed.
  • the upper and lower limits of the number density of the conductive particles are not particularly limited because they change depending on the object to be connected.
  • the lower limit of the number density can be 30 pieces/mm 2 or more, or 12000 pieces/mm 2 or more, or 150000 pieces/mm 2 or more
  • the upper limit of the number density can be, for example, 500000 pieces/mm 2 or less, or 350,000/mm 2 or less, or 300,000/mm 2 or less.
  • the insulating resin layer 12 forming the conductive particle-containing film 10 may be composed of a single insulating resin layer, or may be composed of a laminate of a plurality of insulating resin layers.
  • the layer structure of the conductive particle-containing film 10 as shown in FIG. , and holding the conductive particles 11 in the high-viscosity resin layer 13 is preferable from the viewpoint of suppressing unnecessary flow of the conductive particles 11 .
  • the minimum melt viscosity (A1) of the high-viscosity resin layer 13, the minimum melt viscosity (A2) of the low-viscosity resin layer 14, their ratio (A1/A2), and their layer thicknesses are as described in Japanese Patent No. 6,187,665. It can be the same as the known anisotropic conductive film described in JP-A-2018-81906.
  • the lower limit of the layer thickness of the insulating resin layer 12 is preferably 1 time or more, more preferably 1.3 times or more, or 3 ⁇ m or more, as large as the particle diameter of the conductive particles. Moreover, the upper limit can be two times or less the particle diameter of the conductive particles or 20 ⁇ m or less.
  • the thickness of the laminate is preferably within these ranges.
  • the layer thickness of the insulating resin layer 12 can be measured using a known micrometer or digital thickness gauge. In this case, for example, 10 or more points may be measured, and the average value may be taken as the layer thickness.
  • the resin composition that forms the insulating resin layer 12 is appropriately selected according to the types of the electronic component 1 and the substrate 20 to be connected by the conductive particle-containing film 10, and may be a thermoplastic resin composition or a high-viscosity adhesive resin composition. , can be formed from a curable resin composition.
  • a curable resin composition formed from a polymerizable compound and a polymerization initiator can be used in the same manner as the resin composition forming the insulating resin layer of the conductive particle-containing film described in Japanese Patent No. 6187665. .
  • a thermal polymerization initiator may be used, a photopolymerization initiator may be used, or they may be used in combination.
  • a cationic polymerization initiator is used as the thermal polymerization initiator
  • an epoxy resin is used as the thermally polymerizable compound
  • a photoradical polymerization initiator is used as the photopolymerization initiator
  • an acrylate compound is used as the photopolymerizable compound.
  • a thermal anionic polymerization initiator may be used as the thermal polymerization initiator.
  • the thermal anionic polymerization initiator it is preferable to use a microcapsule-type latent curing agent having a nucleus of an imidazole-modified body and the surface of which is coated with polyurethane.
  • the conductive particle-containing film 10 is heated from 40° C. to 80° C. by selecting the type of curable resin composition forming the insulating resin layer 12, adjusting the concentration of the polymerization initiator, and the like.
  • the time from the start of heating to the start of curing of the insulating resin layer 12 is 10 minutes or more, 20 minutes or more, or further 25 minutes or more. This is because the time from when the insulating resin layer 12 of the conductive particle-containing film 10 is heated in the temperature range of 40° C. to 80° C. to when the insulating resin layer 12 starts to harden is 10 minutes or longer.
  • the time until curing starts means the time until each insulating resin layer starts curing.
  • the superposition process is performed on the stage of a pressure device heated to about 40°C. Moreover, even when the superimposing process is not performed on the heated stage, there is a case where it is placed on the heated stage before the heating and pressurizing process. Therefore, if the curing start time of the resin composition is short when the conductive particle-containing film 10 is heated at 40 to 80° C., there is a possibility that the resin composition will start curing before the superposing step is completed. On the other hand, by setting the curing start time at 40 to 80° C. to 10 minutes or longer, even if the superimposition process is performed on the stage of the pressurizing device that is heated, the superimposition process can be performed before the start of curing. It is possible to complete.
  • the time until the start of curing is originally set according to the time required for the superimposition process, so that the process of providing the conductive particle-containing film on the substrate and the superimposition process can be performed. It is preferable from the viewpoint of shortening the subsequent pressure curing process, but by setting this time to 10 minutes or more, the application of electronic parts is, for example, smartphones, large-sized televisions, public displays (digital signage), wearable displays. (smart watch), etc., it is possible to sufficiently secure the time necessary for the superimposition process. That is, in general, it takes several seconds to several tens of seconds to superimpose an electronic component such as an IC chip (driver IC) and a substrate via a film containing conductive particles.
  • an electronic component such as an IC chip (driver IC) and a substrate via a film containing conductive particles.
  • this superposition process becomes a precise work. Therefore, for example, fine electronic components such as ⁇ LEDs, in which the area of each electrode is 1000 ⁇ m 2 or less, or the length of the longest side of the electronic component is 600 ⁇ m or less, are more difficult to stack than larger IC chips and the like. It is preferable to secure a long period of time. This is because the number of mounted parts increases due to the minute size.
  • the time required for the superimposition process varies depending on conditions such as the method of mounting the components and the apparatus, but as an example, it can take 5 minutes or more, and in some cases 10 minutes or more.
  • the curing start time of the insulating resin layer 12 of the conductive particle-containing film 10 at 40° C. to 80° C. is 10 minutes or more, or the curing start time is sufficiently long with respect to the time required for the temporary bonding and superimposition steps. Whether it can be said to be time can be confirmed, for example, by the following (i), (ii), and (iii).
  • the reaction start time may be measured from the peak temperature measured when the conductive particle-containing film 10 is heated using a differential scanning calorimeter (DSC).
  • DSC differential scanning calorimeter
  • the temperature is changed by DSC. may be measured.
  • the heating rate is set to 10°C/min, preferably 5°C/min, and the holding time is set after reaching 80°C.
  • the reaching temperature can also be 60°C. In this case, the temperature is raised from room temperature (25° C. ⁇ 15° C.).
  • the reaching temperature may be 40°C.
  • the temperature peak (exothermic peak) indicating the start of curing between 40°C and 80°C does not occur for 10 minutes or longer, and more preferably does not occur for 20 minutes or longer.
  • the term "10 minutes or more” means that when the temperature reaches the range of 40°C to 80°C by raising the temperature from room temperature, the time is 10 minutes or more after reaching 40°C. When it is heated, it means 10 minutes or more from the time when the temperature rise to 60°C starts. If 80°C is reached within 10 minutes, include the time held at 80°C. Simply, it can be tested as the time left in a constant temperature bath set at 80°C.
  • the temperature and time for curing the insulating resin layer 12 may be appropriately adjusted according to the time required for the step of superimposing the electronic component and the substrate.
  • the present invention prioritizes securing the time required for the preceding superposition step rather than achieving the curing step by thermocompression in a short time at a low temperature. It is different from the method of connecting electronic components using the inclusion film.
  • (iii) Curing Rate of Insulating Resin Layer The fact that the time from heating the conductive particle-containing film 10 to the temperature range of 40° C. to 80° C. to the start of curing is 10 minutes or more means that the conductive particle-containing film 10 is 40% cured. C. to 80.degree. C. 10 minutes after the curing rate of the insulating resin layer 12 is 25% or less, preferably 20% or less.
  • the curing rate can be obtained by measuring the height of a specific peak in the FT-IR chart of the curable resin composition, measuring the exothermic peak area of DSC, or the like.
  • the conductive particle-containing film is pre-divided according to the size and arrangement of the ⁇ LED on the electrode of the electronic component or the electrode of the substrate by the laser lift-off method.
  • the reaction rate after transfer of the curable resin composition constituting the insulating resin layer of the conductive particle-containing film is preferably 25% or less, more preferably 20% or less, and still more preferably 15% or less. and it is preferable to select the type of resin of the curable resin composition, adjust the concentration of the polymerization initiator, etc. so that this is satisfied.
  • the reaction rate may be measured from the remaining portion of the original film from which the individual pieces were obtained (the edge near the processed portion, etc.).
  • reaction rate (curing rate) of the curable resin composition after 10 minutes from heating the transfer of the conductive particle-containing film by the laser lift-off method from 40 ° C. to 80 ° C. is preferably 25% or less, more preferably. is 20% or less, more preferably 15% or less, so that there is time to place and connect a large number of minute parts, so that the manufacturing conditions are relaxed, contributing to stable productivity. There is expected.
  • the reaction rate after transfer of the conductive particle-containing film is, for example, using FT-IR, before and after laser irradiation in the laser lift-off method, epoxy group (near 914 cm -1 ), (meth) acryloyl group (near 1635 cm -1 ), etc.
  • epoxy group near 914 cm -1
  • (meth) acryloyl group near 1635 cm -1
  • the reduction rate of the reactive group can be obtained by the following equation.
  • Reaction rate (%) ⁇ 1-(a/b)/(A/B) ⁇ 100
  • A is the peak height of the reactive group before laser irradiation
  • B is the peak height of the control before laser irradiation
  • a is the peak height of the reactive group after laser irradiation
  • b is the control peak after laser irradiation. Height.
  • FT-IR measurement it is preferable to set the sample to an IR detector with a film thickness of 10 ⁇ m or less, sandwiched between diamond cells. Moreover, in order to improve the detection sensitivity, it is preferable to cool the IR detector in advance with liquid nitrogen for about 30 minutes.
  • FT-IR measurement conditions are, for example, as follows. Measurement method: Transmission type Measurement temperature: 25°C Measurement humidity: 60% or less Measurement time: 12 sec Spectral range of detector: 4000-700 cm -1
  • the peak height of the reactive group of the completely cured (100% reaction rate) sample should be set to 0%.
  • the reaction rate is calculated by the following formula using HPLC (High Performance Liquid Chromatography).
  • Reaction rate (%) ⁇ 1-c/C ⁇ x 100
  • C is the peak height or area of the reactive component before laser irradiation
  • c is the peak height or area of the reactive component after laser irradiation.
  • singulation may be performed by laser ablation, a laser lift-off method (laser lift method), or other known methods.
  • the adhesive strength of the conductive particle-containing film 10 is determined, for example, by sticking a small piece of the conductive particle-containing film (for example, 0.3 to 1.0 mm wide and 2 cm long) having a release film on one side to the glass substrate. It can be measured by performing a peeling test in which the edge of the peeling film is picked up with tweezers and removed. In this peeling test, when the conductive particle-containing film remains adhered to the glass as success, the n number is 20 or more, preferably 30 or more, and the success rate is preferably 75% or more, preferably 80%. 90% or more is more preferable, and 95% or more is particularly preferable. Since the adhesive force is maintained with high accuracy, the surface of the conductive particle-containing film maintains the holding force necessary for mounting microelectronic parts.
  • this adhesive strength be maintained during the temporary attachment process and the overlapping process.
  • the adhesive force can be measured according to JIS Z 0237, as described in JP-A-2019-214714, and can also be measured by a probe method according to JIS Z 3284-3 or ASTM D 2979-01. It can also be measured as tack force by
  • a probe method for each surface of the conductive particle-containing film For example, the tack force is measured at a probe pressing speed of 30 mm / min, a pressure of 196.25 gf, a pressure time of 1.0 sec, a peeling speed of 120 mm / min, and a measurement temperature of 23 ° C ⁇ 5 ° C.
  • At least one of the front and back surfaces can be 1.0 kPa (0.1 N/cm 2 ) or more, preferably 1.5 kPa (0.15 N/cm 2 ) or more, and 3 kPa (0.3 N). /cm 2 ) is more preferred.
  • the adhesive strength of the conductive particle-containing film 10 can also be determined according to the adhesive strength test described in JP-A-2017-48358.
  • a conductive particle-containing film is sandwiched between two glass plates, one glass plate is fixed, and the other glass plate is peeled off at a peeling speed of 10 mm / min and a test temperature of 50 ° C.
  • the adhesive strength thus measured can be preferably 10 kPa (1 N/cm 2 ) or more, more preferably 100 kPa (10 N/cm 2 ) or more.
  • the electronic component 1 to be thermocompressed is, for example, smaller than a general IC chip in length of the longest side of 600 ⁇ m or less, or an area of each electrode of 1000 ⁇ m 2 or less. can minimize the problem of misalignment in temporary press-bonding in the superimposition process even for electronic components of .
  • the production method of the conductive particle-containing film 10 itself is not particularly limited, and can be obtained, for example, by the method described in Japanese Patent No. 6187665.
  • the production method of the present invention generally includes a temporary attachment step of attaching a conductive particle-containing film 10 to a substrate 20, an electrode 2 of a fine electronic component 1, and a substrate 20 having an electrode corresponding to the electrode 2 of the electronic component 1.
  • a step of superimposing via the conductive particle-containing film 10 (superposition step), while pressing the electronic component 1 and the substrate 20 superimposed via the conductive particle-containing film 10, curing the insulating resin of the conductive particle-containing film 10. It has a step of curing (pressure curing step).
  • the number of electrodes of the electronic component 1 may be one or plural. It can be appropriately determined according to the use of the connection structure.
  • the electronic component 1 and the substrate 20 stacked with the conductive particle-containing film 10 interposed therebetween are applied with a pressure smaller than that in the pressure curing step.
  • a pre-pressurizing step may be provided in which the conductive particles are sandwiched between the electrodes of the electronic component 1 and the electrodes of the substrate 20 by applying pressure.
  • first pressurization the pressurization in the pre-pressurization step
  • second pressurization the pressurization in the pressurization and curing step
  • the production method of the present invention can have preliminary or additional steps as necessary.
  • a manufacturing method including a temporary bonding process, a superimposing process, a pre-pressing process and a pressure curing process will be described.
  • a case of connecting the attached semiconductor component to the substrate 20 will be described.
  • the dicing tape 3 may be replaced with a stamp material for transfer, an adhesive film, a base film with an adhesive layer, or the like.
  • a plurality of electronic components can be connected at once, and as will be described later, the first pressurization and the second pressurization are performed using a pressurization device.
  • the dicing tape 3 is separated from the electronic component 1 to expose the electrodes 2 of the electronic component 1 as shown in FIG. 3B.
  • the release film 4 it is preferable to use a film having an adhesive force to the electronic component 1 that is smaller than the adhesive force of the conductive particle-containing film 10 to the electronic component 1 .
  • a plurality of electronic components 1 are connected to the substrate 20 at the same time. You don't have to. It may be connected individually, may be selectively connected in multiple pieces in the whole, or may be connected as a whole.
  • the conductive particle-containing film 10 is placed on the surface of the substrate 20 on which the electrodes 21 are formed, and temporarily adhered.
  • the insulating resin layer 12 as the conductive particle-containing film 10 is a thermosetting high-viscosity resin layer 13 holding the conductive particles 11 and a low-viscosity resin layer laminated on the high-viscosity resin layer 13. 14 of two-layer construction is used. Further, in the conductive particle-containing film 10 shown in FIG.
  • the amount of protrusion on the low-viscosity resin layer 14 side is smaller than the amount of protrusion on the high-viscosity resin layer 13 side, and the conductive particles 11 are substantially held by the high-viscosity resin layer 13 . I am using what I have.
  • JP-A-2017-098126 may be applied to selectively arrange the non-defective portion of the conductive particle-containing film 10 on the substrate 20.
  • the electrodes 2 of the electronic component 1 and the electrodes 21 of the substrate 20 are aligned.
  • a known technique can be used as the alignment method, and there is no particular limitation.
  • the insulating resin layer 12 does not start curing before the alignment is completed, so it is possible to perform the alignment precisely.
  • a method of arranging the conductive particle-containing film 10 on the electrode 21 of the substrate 20, and aligning and arranging the electrode 2 of the electronic component 1 on the conductive particle-containing film 10 arranged on the electrode 21 of the substrate 20 As a method, for example, a known laser lift-off method (for example, JP-A-2017-157724) or according thereto, the conductive particle-containing film 10 is irradiated with a laser beam, and the conductive particle-containing film 10 corresponds to the electrode 21.
  • a known laser lift-off method for example, JP-A-2017-157724
  • a piece-like film having an area may be detached and landed on the electrodes 21 , and the electronic components 1 formed vertically and horizontally on the translucent substrate may be irradiated with a laser beam so that the electronic components 1 are connected to the electrodes of the substrate 20 .
  • the droplets may be landed on the conductive particle-containing film on 21 while being aligned.
  • the laser lift-off method can be performed using a commercially available laser lift-off device (for example, Shin-Etsu Chemical Co., Ltd. laser lift-off device, trade name “Invisi LUM-XTR”).
  • the conductive particle-containing film 10 may be transferred to the electrode 2 of the electronic component 1 or the electrode 21 of the substrate 20 by a transfer method using a known stamp material (for example, JP-A-2021-141160).
  • a known stamp material for example, JP-A-2021-141160
  • individual pieces of the conductive particle-containing film may be landed on the substrate by the laser lift-off method described above, and ⁇ LED may be landed on the conductive particle-containing film.
  • the size of the individual piece of the conductive particle-containing film is appropriately determined according to the size of the ⁇ LED and the electrode. It is also possible to connect several ⁇ LEDs in one piece.
  • the substrate may have a silicone rubber layer, for example, in order to suppress deformation, destruction, displacement of the landing position, etc. of the electronic component.
  • PDMS polydimethylsiloxane
  • a conductive particle-containing film and electronic components such as ⁇ LEDs are provided or arranged on a silicone sheet such as a polydimethylsiloxane (PDMS) sheet by a laser lift-off method, and can be transferred to be placed on a substrate. That is, by transferring the state in which the conductive particle-containing film and the electronic component are provided on the silicone sheet to the substrate, the electronic component and the substrate can be superimposed. In other words, even when a conductive particle-containing film is provided or arranged on a substrate using a silicone sheet such as a polydimethylsiloxane (PDMS) sheet by the laser lift-off method, the silicone sheet can be used by the laser lift-off method.
  • a silicone sheet such as a polydimethylsiloxane (PDMS) sheet by the laser lift-off method
  • the electronic components such as ⁇ LEDs are provided or arranged on the conductive particle-containing film
  • the electronic components such as ⁇ LEDs on the silicone sheet or the individualized conductive particle-containing film may be transferred. That is, the electronic parts and the substrate can be superimposed by transferring the electronic parts or the individually-divided conductive particle-containing film on the silicone sheet to the substrate.
  • the conductive particle-containing film may be individualized.
  • the laser lift-off method can be used in various modes in carrying out the superimposing process.
  • the insulating resin layer 12 constituting the conductive particle-containing film 10 is blended with an inorganic filler such as a cushioning rubber material, silica, talc, titanium oxide, calcium carbonate, magnesium oxide, or the like.
  • Durometer A rubber hardness (in accordance with JIS K 6253) is preferably 20 to 40, more preferably 20 to 35, still more preferably 20 to 30, and a temperature of 30 ° C in a dynamic viscoelasticity test using an indentation device.
  • the storage elastic modulus at a frequency of 200 Hz is preferably 60 MPa or less.
  • the storage elastic modulus of the insulating resin layer after laser irradiation at a temperature of 30°C and a frequency of 200 Hz is preferably 100 MPa or more, more preferably 2000 MPa or more. If the storage elastic modulus is too low, good electrical conductivity cannot be obtained, and connection reliability tends to decrease.
  • the storage elastic modulus at a temperature of 30°C was measured in accordance with JIS K7244 in a tensile mode using a viscoelasticity tester (Vibron, A&D Co., Ltd.), for example, at a frequency of 11 Hz and a heating rate of 3°C/min. It can be measured under the measurement conditions.
  • Pre-pressurization step (first pressurization)
  • FIG. 6 This first pressurization is performed until the conductive particles 11 contained in the conductive particle-containing film 10 are sandwiched between the electrodes 2 of the electronic component 1 and the electrodes 21 of the substrate 20, as shown in FIG. .
  • the first pressurization holds the conductive particles between the electrodes so that they do not move unnecessarily.
  • the distance between the electrode 2 of the electronic component 1 and the electrode 21 of the substrate 20 can be set to 70% or more and 100% or less of the initial particle diameter of the conductive particles 11 sandwiched therebetween. preferable.
  • the pressurization force in the first pressurization can be, for example, 0.5-15 MPa, preferably 2-8 MPa. This is appropriately adjusted according to the size of the conductive particles, compressibility (hardness), repulsive force, thickness of the resin layer, and the like.
  • the temperature at the time of the first pressurization may be heated if necessary, but it is preferably below the starting temperature of the curing reaction of the conductive particle-containing film 10, usually 80 ° C. or lower, preferably 55 ° C. or lower, It is more preferable to set the temperature to 40° C. or less. There is no particular lower limit, and only pressure may be applied at room temperature (25° C. ⁇ 15° C.). That is, the temperature during the first pressurization can be the environmental temperature. This pre-pressurization step (first pressurization) may be omitted in some cases.
  • the second pressurization is performed at a pressure higher than the first pressurization without reducing the pressurization force from the first pressurization.
  • the applied pressure at this time can be 30 to 120 MPa, preferably 60 to 80 MPa. This pressure is adjusted according to the size of the conductive particles, compressibility (hardness), repulsive force, thickness of the resin layer, and the like. As a result, as shown in FIG. 8, the conductive particles 11 sandwiched between the electrodes 2 of the electronic component 1 and the electrodes 21 of the substrate 20 are pressed and flattened, and the electrical connection between these electrodes 2 and 21 is ensured. .
  • the insulating resin layer 12 is cured to fix the conductive particles 11 sandwiched between the electrodes 2 of the electronic component 1 and the electrodes 21 of the substrate 20, thereby obtaining the connection structure 40 of the present invention. Therefore, when the insulating resin layer 12 is formed of a thermosetting resin, the temperature is raised in the pressure curing process. In this case, the heating is preferably performed in a short time using a pulse heater or the like. The rate of temperature rise is appropriately determined according to the curing characteristics of the insulating resin layer 12. For example, the temperature reached is 100° C. or higher, preferably 120° C. or higher, more preferably 150° C. or higher, and the time to press out is 4 seconds or longer. , preferably 7 seconds or more, more preferably 10 seconds or more. In addition, when the conductive particles are solder, the pressure curing process can be replaced with a reflow process.
  • connection structure 40 shown in FIG The substrate 20 having the electrodes 21 corresponding to the electrodes 2 of is bonded with the cured product of the insulating resin layer 12 of the conductive particle-containing film 10, and the electrodes 2 of the electronic component 1 and the electrodes 21 of the substrate 20 are They are electrically connected by the conductive particles 11 sandwiched between them.
  • the number of the conductive particles 11 sandwiched between the electrode 2 of the electronic component 1 and the electrode 21 of the substrate 20 is set to a pair of electrodes 2, 21 facing each other like a general anisotropic connection.
  • the number may be 3 or more, but may be less than 3 or may be 1 as the conductive particles 11 positioned on the pair of electrodes 2 and 21 facing each other reliably contribute to conduction. Therefore, the number density of the conductive particles 11 in the conductive particle-containing film 10 is preferably a number density of 3 or more conductive particles 11 for the pair of electrodes 2 and 12 facing each other. Both less than 3 and 3 or more can be practically used as long as there is no short circuit.
  • the conductive particle-containing film 10 was first placed on the substrate 20 in the alignment step, but in the present invention, the conductive particle-containing film 10 may be placed on the electronic component 1 first.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
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Abstract

La présente invention concerne un procédé de connexion d'un composant électronique fin et d'un substrat à l'aide d'un film conducteur contenant des particules. Ce procédé de fabrication est destiné à une structure de connexion 40 dans laquelle un composant électronique fin 1 ayant un bord le plus long d'au plus 600 µm ou ayant des électrodes ayant chacune une zone d'au plus 1000 μm2 est électriquement connecté à un substrat 20 ayant des électrodes 21 correspondant aux électrodes respectives 2 du composant électronique 1, et qui comprend : une étape de superposition pour superposer le composant électronique 1 sur le substrat 20 ayant entre ceux-ci un film conducteur contenant des particules 10 dans lequel des particules conductrices 11 sont maintenues dans une couche de résine isolante 12 ; et une étape de durcissement à la presse pour durcir la couche de résine isolante 12 du film contenant des particules conductrices tout en appliquant une pression sur le composant électronique superposé et le substrat 20 ayant le film contenant des particules conductrices entre ceux-ci. En ce qui concerne les caractéristiques de durcissement du film contenant des particules conductrices 10, le temps de début de chauffage du film conducteur contenant des particules 10 de 40 °C jusqu'à 80 °C au début du durcissement de la couche de résine isolante 12 est d'au moins 10 minutes.
PCT/JP2022/035026 2021-09-22 2022-09-20 Procédé de fabrication de structure de connexion WO2023048148A1 (fr)

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JPH09219579A (ja) * 1996-02-13 1997-08-19 Oki Electric Ind Co Ltd 電子部品の接続方法及び接続装置
JP2005236256A (ja) * 2003-09-12 2005-09-02 Matsushita Electric Ind Co Ltd コネクタシート及び配線基板、並びにコネクタシート及び配線基板の製造方法
JP2008069243A (ja) * 2006-09-13 2008-03-27 Nippon Avionics Co Ltd 接着状態予測方法
JP2009007443A (ja) * 2007-06-27 2009-01-15 Sony Chemical & Information Device Corp 接着フィルム
JP2013143292A (ja) * 2012-01-11 2013-07-22 Sekisui Chem Co Ltd 異方性導電フィルム材料、接続構造体及び接続構造体の製造方法
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