WO2022068218A1 - 一种mems加速度传感器芯片的检测方法及装置 - Google Patents

一种mems加速度传感器芯片的检测方法及装置 Download PDF

Info

Publication number
WO2022068218A1
WO2022068218A1 PCT/CN2021/094562 CN2021094562W WO2022068218A1 WO 2022068218 A1 WO2022068218 A1 WO 2022068218A1 CN 2021094562 W CN2021094562 W CN 2021094562W WO 2022068218 A1 WO2022068218 A1 WO 2022068218A1
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
plate
value
electrode plate
acceleration sensor
Prior art date
Application number
PCT/CN2021/094562
Other languages
English (en)
French (fr)
Chinese (zh)
Inventor
刘婧
冯方方
李宗伟
杨长春
周永健
Original Assignee
中国科学院地质与地球物理研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中国科学院地质与地球物理研究所 filed Critical 中国科学院地质与地球物理研究所
Priority to AU2021206818A priority Critical patent/AU2021206818B1/en
Priority to JP2022533625A priority patent/JP7221453B2/ja
Publication of WO2022068218A1 publication Critical patent/WO2022068218A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system

Definitions

  • the present application relates to the technical field of sensor performance analysis, and in particular, to a detection method and device for a MEMS acceleration sensor chip.
  • Micro Electro Mechanical Systems utilizes micro-nano processing technology to realize micro-mechanical structures on silicon wafers, which greatly reduces the size of devices, reduces energy consumption and improves reliability. Due to the adoption of silicon micromachining technology and semiconductor integrated circuit technology, mass production is easy to achieve and the cost is low. MEMS are widely used in consumer electronics, automotive electronics, biomedical and other fields because of their advantages of miniaturization, integration, low cost, and low power consumption. MEMS acceleration sensor is one of them.
  • the MEMS acceleration sensor chip After the MEMS acceleration sensor chip is designed and processed, its performance needs to be tested and analyzed to determine whether it meets the design requirements and can work normally. Because the cost of MEMS chip packaging often accounts for 70-80% of the cost of the entire MEMS acceleration sensor element. Therefore, preliminarily testing the performance of the MEMS acceleration sensor chip after the processing of the MEMS acceleration sensor chip, excluding the chips that cannot work normally, and screening out the MEMS acceleration sensor chip with good performance for packaging, has become an urgent problem to be solved at present.
  • the embodiments of the present application provide a detection method and device for a MEMS acceleration sensor chip, which are used to solve the problem that the existing MEMS acceleration sensor chip cannot be preliminarily excluded after the processing of the MEMS acceleration sensor chip is completed, resulting in high cost technology. question.
  • an embodiment of the present application provides a method for detecting a MEMS acceleration sensor chip, characterized in that the method includes: applying a variable DC voltage to the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip, so that the The second pole plate moves in the direction of the first pole plate; wherein, the first pole plate is a fixed pole plate, and the second pole plate is a movable pole plate; the AC voltage of the preset frequency is applied to the first pole plate and the second pole plate.
  • Diode plate to obtain the basic capacitance value and the pressure capacitance value between the first electrode plate and the second electrode plate; wherein, when the basic capacitance value is zero, the voltage value of the DC voltage is zero, the first electrode plate and the second electrode plate
  • the basic capacitance value and the pressure capacitance value between the MEMS acceleration sensor chips determine the voltage-capacitance characteristic curve, the turning voltage and the capacitance change value between the first plate and the second plate of the MEMS acceleration sensor chip; according to the first plate and the second plate
  • the basic capacitance value between the plates, the turning voltage, the capacitance change value and the voltage-capacitance characteristic curve are used to judge whether the MEMS acceleration sensor chip is normal.
  • An embodiment of the present application provides a detection method for a MEMS acceleration sensor chip.
  • the basic capacitance value, turning voltage, and capacitance change value of the MEMS acceleration sensor chip are obtained by measuring the capacitance value between two polar plates under different DC voltage values. Through the obtained basic capacitance value, turning voltage, and capacitance change value, analyze whether there are problems in the processing of the MEMS acceleration sensor, and determine which operation or process problems exist for subsequent improvement.
  • the method further includes: determining a basic capacitance value, a turning voltage, a capacitance change value, and a voltage-capacitance characteristic curve between the second plate and the third plate of the MEMS acceleration sensor chip;
  • the capacitance value, turning voltage, capacitance change value and the theoretical design value of the voltage-capacitance characteristic curve are compared to judge whether the MEMS acceleration sensor chip is normal.
  • a variable DC voltage is applied to the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip, so that the second electrode plate moves in the direction of the first electrode plate, which specifically includes : apply a variable DC voltage to the first and second polar plates of the MEMS acceleration sensor chip; adjust the DC voltage value based on the preset step voltage value so that the second polar plate faces the first polar plate The direction of movement; wherein, the moving distance of the second plate is determined by the current DC voltage value.
  • adjusting the output voltage value of the DC voltage based on a preset step voltage value, so that the second pole plate moves in the direction of the first pole plate specifically includes: based on the preset step voltage value Stepping the voltage value to adjust the DC voltage value so that different DC voltage values are obtained between the first electrode plate and the second electrode plate, so as to generate differences between the first electrode plate and the second electrode plate based on the different DC voltage values
  • the electrostatic force is used to overcome the elastic force generated by the deformation of the elastic beam caused by the movement of the second electrode plate; wherein, the elastic beam is a component connected to the second electrode plate of the MEMS acceleration sensor chip.
  • an AC voltage of a preset frequency is applied to the first electrode plate and the second electrode plate to obtain the basic capacitance value and the voltage between the first electrode plate and the second electrode plate.
  • the capacitance value specifically includes: applying an AC voltage of a preset frequency to the first plate and the second plate of the MEMS acceleration sensor chip, so that a current is generated between the first plate and the second plate; based on the generated The current information is used to calculate the basic capacitance value and the pressurized capacitance value between the first electrode plate and the second electrode plate; wherein, the current information includes the amplitude and phase of the current.
  • the breakover voltage is the formula When the result is equal to zero, the voltage value corresponding to V; among them, ⁇ is the dielectric constant of the medium between the first plate and the second plate, A is the plate area of the first plate and the second plate, and V is The DC voltage value applied between the first pole plate and the second pole plate, d is the pole plate distance between the first pole plate and the second pole plate, and k is the elastic coefficient of the elastic beam.
  • judging whether the MEMS acceleration sensor chip is normal according to the basic capacitance value, the turning voltage and the capacitance change value of the first electrode plate and the second electrode plate specifically includes: The basic capacitance value, turning voltage, capacitance change value and voltage-capacitance characteristic curve between one electrode plate and the second electrode plate, and the corresponding basic capacitance value between the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip, Turning voltage, capacitance change value and theoretical design value of the voltage-capacitance characteristic curve are compared; any one or more of the current basic capacitance value, turning voltage, capacitance change value and voltage-capacitance characteristic curve are compared with the corresponding When the difference between the basic capacitance value, the turning voltage, the capacitance change value, and the theoretical design value of the voltage-capacitance characteristic curve is greater than the preset threshold, it is determined that the MEMS acceleration sensor chip is abnormal.
  • the preset multiple of the absolute value of the peak value of the AC voltage is smaller than the absolute value of the DC voltage value.
  • the method before applying a variable DC voltage to the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip to move the second electrode plate toward the direction of the first electrode plate, The method further includes: arranging a first limit bump on the edge of the first surface of the first plate of the MEMS acceleration sensor chip, and disposing a second limit bump on the edge of the first surface of the third plate, to Avoid contacting the second electrode plate with the first electrode plate or the third electrode plate during the movement of the second electrode plate under the action of the DC voltage.
  • an embodiment of the present application also provides a detection device for a MEMS acceleration sensor chip, characterized in that the device includes: a voltage output module for applying a variable DC voltage to the first plate of the MEMS acceleration sensor chip and the second pole plate, so that the second pole plate moves in the direction of the first pole plate; wherein, the first pole plate is a fixed pole plate, and the second pole plate is a movable pole plate; the voltage output module is also used for The AC voltage of the preset frequency is added to the first pole plate and the second pole plate to obtain the basic capacitance value and the pressurized capacitance value between the first pole plate and the second pole plate; wherein, the basic capacitance value is a DC voltage When the voltage value is zero, the capacitance value between the first electrode plate and the second electrode plate, and the voltage value of the pressure capacitor value are not zero when the voltage value of the DC voltage is not zero, the capacitance value between the first electrode plate and the second electrode plate value; a determination module for determining the voltage between the first plate and
  • FIG. 1 is a schematic diagram of a simple structure of a MEMS acceleration sensor chip provided by an embodiment of the application;
  • FIG. 2 is a flowchart of a method for detecting a MEMS acceleration sensor chip provided by an embodiment of the present application
  • FIG. 3 is a schematic diagram of a displacement direction of a MEMS acceleration sensor chip under a DC voltage provided by an embodiment of the present application;
  • FIG. 4 is a schematic diagram of a physical model of a MEMS acceleration sensor chip provided by an embodiment of the present application.
  • FIG. 5 is a schematic diagram of a capacitance-voltage characteristic curve of a MEMS acceleration sensor chip provided by an embodiment of the application;
  • FIG. 6 is a schematic structural diagram of a position limit bump of a MEMS acceleration sensor chip according to an embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a detection device for a MEMS acceleration sensor chip according to an embodiment of the present application.
  • FIG. 1 is a schematic diagram of a simple structure of a MEMS acceleration sensor chip provided by an embodiment of the present application.
  • the MEMS acceleration sensor chip is composed of three polar plates: a first electrode plate, a second electrode plate, and a third electrode plate.
  • the first pole plate and the third pole plate are fixed pole plates, and will not move under the action of external force.
  • the second pole plate is located in the middle of the first pole plate and the third pole plate, the second pole plate is movable, and is also referred to as a movable pole plate in the embodiment of the present application.
  • the first surface of the second electrode plate and the first surface of the first electrode plate form a plate capacitor with the same area of the upper and lower electrode plates, and the second surface of the second electrode plate and the first surface of the third electrode plate also form a Plate capacitors with equal upper and lower plate areas.
  • the first surface of the second electrode plate is opposite to the first surface of the first electrode plate, so that the second electrode plate and the first electrode plate form a first capacitor;
  • the first surfaces of the triode plates are arranged opposite to each other, so that the second electrode plate and the third electrode plate form a second capacitor.
  • the embodiments of the present application provide a method and device for detecting a MEMS acceleration sensor chip.
  • the basic capacitance value, turning voltage, and capacitance change value of the MEMS acceleration sensor chip are obtained by measuring the capacitance value between two polar plates under different voltages. If the error between the measured value and the corresponding theoretical design value is within a reasonable range, the MEMS acceleration sensor chip meets the design requirements. Otherwise, it is possible to analyze what problems exist in operation or technology during the processing of the MEMS acceleration sensor according to its basic capacitance value, turning voltage, capacitance change value, and voltage-capacitance characteristic curve, so as to facilitate subsequent improvement.
  • FIG. 2 is a flowchart of a detection method of a MEMS acceleration sensor chip provided by an embodiment of the present application.
  • a method for detecting a MEMS acceleration sensor chip provided by an embodiment of the present application specifically includes the following steps:
  • Step 101 adding the positive and negative electrodes of the variable DC voltage to the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip respectively, so that the second electrode plate moves toward the direction of the first electrode plate.
  • the variable DC voltage is a DC voltage whose voltage value can be adjusted, that is, a DC voltage with different voltage values.
  • the capacitance value of the plate capacitor formed by the first surface of the second pole plate and the first surface of the first pole plate wherein, C is the capacitance between the first pole plate and the second pole plate, and ⁇ is the first pole plate.
  • the positive pole of the DC voltage can be connected to the first plate of the MEMS acceleration sensor chip, and the negative pole of the DC voltage can be connected to the first plate of the MEMS acceleration sensor chip. It is connected to the second plate of the MEMS acceleration sensor chip; the negative electrode of the DC voltage can also be connected to the first plate of the MEMS acceleration sensor chip, and the positive electrode of the DC voltage can be connected to the second plate of the MEMS acceleration sensor chip.
  • the DC voltage value is adjusted based on the preset step voltage value, so that the second electrode plate faces the first electrode plate move in the direction.
  • the output voltage of the DC voltage is adjusted based on a preset step voltage value.
  • the preset step voltage value is the value of the output change of the DC voltage each time the DC voltage value is adjusted.
  • the preset step voltage value is 1V
  • each time the DC voltage value is adjusted the DC voltage value is increased by 1V or decreased by 1V.
  • the positive pole of the DC voltage is connected to the first plate of the MEMS acceleration sensor chip, and the negative pole of the DC voltage is connected to the second plate of the MEMS acceleration sensor chip, the first surface of the first plate is full of positive charges.
  • the first surface of the second electrode plate is full of negative charges; if the negative electrode of the DC voltage is connected to the first electrode plate of the MEMS acceleration sensor chip, and the positive electrode of the DC voltage is connected to the second electrode plate of the MEMS acceleration sensor chip, the first electrode The first surface of the plate is full of negative charges, and the first surface of the second plate is full of positive charges.
  • the first electrode plate is a fixed electrode plate and the second electrode plate is a moving electrode plate, whether the first surface of the first electrode plate is full of positive charges, the first surface of the second electrode plate is full of negative charges, or the first The first surface of the pole plate is full of negative charges, and the first surface of the second pole plate is full of positive charges, and the second pole plate will be due to the electrostatic force of mutual attraction between the pole plates, so that the second pole plate has a tendency to move towards the first pole. A trend of movement in the direction of the plate.
  • FIG. 3 is a schematic diagram of a displacement direction of a MEMS acceleration sensor chip under a DC voltage according to an embodiment of the present application.
  • the second electrode plate moves toward the first electrode plate.
  • the first electrode plate and the third electrode plate are both fixed electrode plates, it is assumed that the first electrode plate and the second electrode plate and the The distance between the second pole plate and the third pole plate is d 0 .
  • the distance between the first pole plate and the second pole plate is d 0 -x
  • the distance between the second pole plate and the third pole plate is d 0 +x.
  • FIG. 4 is a schematic diagram of a physical model of a MEMS acceleration sensor chip provided by an embodiment of the present application.
  • the MEMS acceleration sensor consists of a mass block, an elastic beam and a fixed frame.
  • the upper surface of the fixed frame is equivalent to the first pole plate or the third pole plate
  • the mass block is equivalent to the second pole plate
  • the lower surface of the fixed frame is equivalent to the third pole plate or the first pole plate.
  • the mass is connected to the frame by elastic beams. When the mass block moves, it will deform the elastic beam connected to the mass block, thereby generating elastic force, which can be equivalent to a spring structure.
  • the electrostatic force generated between the first pole plate and the second pole plate will make the second pole plate overcome the elastic force generated by the elastic beam strain, and make the second pole plate finally stop at the point where the elastic force and the electrostatic force between the pole plates are equal. Location.
  • the electrostatic force between the first pole plate and the second pole plate is
  • d 0 is the distance between the first pole plate and the second pole plate when the voltage value of the applied voltage between the first pole plate and the second pole plate is zero
  • x is the movement of the second pole plate towards the first pole plate distance
  • V is the DC voltage value added between the first pole plate and the second pole plate
  • k is the elastic coefficient of the elastic beam.
  • a variable DC voltage can also be applied to the second electrode plate and the third electrode plate of the MEMS acceleration sensor chip by the method provided in the above step 101, so that the second electrode plate faces the third electrode plate. The direction of the plate moves.
  • Step 102 Add the positive and negative electrodes of the AC voltage of the preset frequency to the first electrode plate and the second electrode plate, respectively, to obtain the basic capacitance value and the pressurized capacitance value between the first electrode plate and the second electrode plate.
  • the embodiment of the present application also applies an AC voltage of a preset frequency to the first electrode plate and the second electrode plate.
  • the capacitance values of the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip under different DC voltage values are measured by an AC voltage with a preset frequency.
  • the two output ends of the AC voltage of the preset frequency are respectively applied to the first plate and the second plate of the MEMS acceleration sensor chip, so that the first plate and the second plate are respectively applied.
  • a current is generated between the two electrode plates, and based on the generated current information, the basic capacitance value between the first electrode plate and the second electrode plate is calculated; wherein, the current information includes the amplitude and phase of the current.
  • the specific calculation principle of the capacitance value is as follows:
  • the MEMS acceleration sensor chip is measured once by the AC voltage of the preset frequency
  • the preset multiple of the absolute value of the peak value of the AC voltage is less than the absolute value of the DC voltage value; wherein, the preset multiple should be at least greater than one hundred, that is, the voltage value of the DC voltage should be It is more than two orders of magnitude greater than the peak value of the AC voltage, so as to prevent the position of the second electrode plate from moving due to the high AC voltage, thereby affecting the accuracy of the capacitance value measurement result.
  • the positive electrode and the negative electrode of the AC voltage of the preset frequency can also be added to the second electrode plate and the third electrode plate respectively by the method provided in the above step 102, so as to obtain the second electrode plate and the third electrode plate.
  • Step 103 based on the obtained basic capacitance value and pressurized capacitance value between the first electrode plate and the second electrode plate, determine the inflection voltage between the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip and the change in capacitance. value.
  • FIG. 5 is a schematic diagram of a capacitance-voltage characteristic curve of a MEMS acceleration sensor chip according to an embodiment of the present application.
  • the corresponding capacitance value is the basic capacitance value between the first electrode plate and the second electrode plate.
  • the capacitance value corresponding to the adjusted DC voltage value is the pressurized capacitance value between the first electrode plate and the second electrode plate.
  • the positive and negative semi-axes corresponding to the voltage in FIG. 5 are that the positive pole of the DC voltage is connected to the first pole plate, the negative pole is connected to the second pole plate, and the negative pole of the DC voltage is connected to the first pole plate, and the positive pole is connected to the first pole plate. in both cases of the second plate.
  • the turning voltage is the corresponding voltage value when the capacitance between the plates begins to change rapidly.
  • the specific calculation principle of the turning voltage is as follows:
  • the first limiting bumps are arranged on the edge of the first surface of the first plate of the MEMS acceleration sensor chip, and the second limiting bumps are arranged on the edge of the first surface of the third plate. point.
  • the capacitance value between the first pole plate and the second pole plate will not change. change.
  • the difference between the base capacitance value and the pressure capacitance value between the first electrode plate and the second electrode plate is called a capacitance change value.
  • FIG. 6 is a schematic structural diagram of a position limiting bump of a MEMS acceleration sensor chip according to an embodiment of the present application.
  • the limiting bumps 501 are disposed on the first surface of the first electrode plate and the first surface of the third electrode plate.
  • the size and shape of the limiting bumps can be adjusted according to the actual detection requirements. Not limited.
  • the second electrode of the MEMS acceleration sensor chip can also be determined based on the obtained basic capacitance value and the pressure capacitance value between the second electrode plate and the third electrode plate by the method provided in the above step 103 The transition voltage between the plate and the third plate and the change in capacitance.
  • the method is the same as determining the turning voltage and the capacitance change value between the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip, and details are not repeated here.
  • Step 104 Determine whether the MEMS acceleration sensor chip is normal according to the basic capacitance value, the turning voltage and the capacitance change value of the first electrode plate and the second electrode plate.
  • the difference between the current basic capacitance value and the theoretical design value of the corresponding basic capacitance value is greater than the preset threshold, it is determined that there is a problem in the process of processing the current MEMS acceleration sensor chip, thereby causing the structure of the MEMS acceleration sensor chip.
  • the parameters differ from the theoretical design values.
  • the difference between the current turning voltage and the theoretical design value of the corresponding turning voltage is greater than the preset threshold, it is also determined that there is a problem in the process of processing the current MEMS acceleration sensor chip, resulting in the structure of the MEMS acceleration sensor chip.
  • the parameters differ from the theoretical design values.
  • the second plate of the current MEMS acceleration sensor chip cannot normally move to the corresponding voltage value according to different voltage values. position; in this case, it means that there may be problems in the processing of the elastic beam, so that the second plate cannot move normally.
  • the MEMS acceleration sensor chip it is also possible to judge whether the MEMS acceleration sensor chip is normal according to the basic capacitance value, the turning voltage and the capacitance change value of the second electrode plate and the third electrode plate by the method provided in the above step 104 .
  • the specific method is the same as the method of passing the basic capacitance value, turning voltage, and capacitance change value of the first electrode plate and the second electrode plate, and will not be repeated here.
  • the MEMS acceleration sensor chip can be judged to be normal only when the voltage, capacitance change value, and C-V characteristic curve and the corresponding theoretical design value errors are all within a reasonable range.
  • the method for detecting a MEMS acceleration sensor chip provided by the present application can detect the MEMS acceleration sensor chip before packaging, and can also detect the MEMS acceleration sensor chip after packaging. In order to avoid the cost increase due to the packaging of the MEMS acceleration sensor chip that cannot work normally, it is recommended to test the MEMS acceleration sensor chip before it is packaged.
  • the method for detecting a MEMS acceleration sensor chip solves the problem that since the MEMS acceleration sensor chip can be mass-produced, the packaging cost of the MEMS acceleration sensor chip often accounts for 70-80% of the production of the entire MEMS acceleration sensor chip. Therefore, packaging the MEMS acceleration sensor chip that cannot work normally increases the cost.
  • a method for detecting a MEMS acceleration sensor chip provided by an embodiment of the present application realizes a preliminary test of the performance of a MEMS acceleration sensor chip before packaging, can exclude chips that cannot work normally, and select a MEMS acceleration sensor chip with good performance for packaging. , which greatly saves costs.
  • an embodiment of the present application also provides a detection device for a MEMS acceleration sensor chip, the schematic diagram of which is shown in FIG. 7 .
  • FIG. 7 is a schematic structural diagram of a detection device for a MEMS acceleration sensor chip according to an embodiment of the present application.
  • a detection device 700 for a MEMS acceleration sensor chip provided by an embodiment of the present application includes: a voltage output module 701 , a determination module 702 , and a determination module 703 .
  • FIG. 7 does not constitute a limitation on the detection device of the MEMS acceleration sensor chip. show more or fewer components, or combinations of certain components, or arrangements of different components.
  • the voltage output module 701 is used to apply a variable DC voltage to the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip, so that the second electrode plate faces the first electrode plate
  • the MEMS acceleration sensor chip is the chip before packaging, the first electrode plate is a fixed electrode plate, and the second electrode plate is a moving electrode plate; the voltage output module 701 is also used to add the AC voltage of the preset frequency to the In the first pole plate and the second pole plate, to obtain the basic capacitance value and the pressurized capacitance value between the first pole plate and the second pole plate; wherein, when the basic capacitance value is zero when the voltage value of the DC voltage is zero, the first When the capacitance value between the first electrode plate and the second electrode plate, the pressurized capacitance value is not zero and the voltage value of the DC voltage is not zero, the capacitance value between the first electrode plate and the second electrode plate; the determining module 702 is used for Based on the obtained basic capacitance value and pressurized capacitance value between

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Pressure Sensors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
PCT/CN2021/094562 2021-04-26 2021-05-19 一种mems加速度传感器芯片的检测方法及装置 WO2022068218A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2021206818A AU2021206818B1 (en) 2021-04-26 2021-05-19 Apparatus and method for detecting mems acceleration sensor chip
JP2022533625A JP7221453B2 (ja) 2021-04-26 2021-05-19 Ｍｅｍｓ加速度センサチップの検出方法及び装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202110455222.2 2021-04-26
CN202110455222.2A CN113203939B (zh) 2021-04-26 2021-04-26 一种mems加速度传感器芯片的检测方法及装置

Publications (1)

Publication Number Publication Date
WO2022068218A1 true WO2022068218A1 (zh) 2022-04-07

Family

ID=77028827

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/094562 WO2022068218A1 (zh) 2021-04-26 2021-05-19 一种mems加速度传感器芯片的检测方法及装置

Country Status (4)

Country Link
JP (1) JP7221453B2 (ja)
CN (1) CN113203939B (ja)
AU (1) AU2021206818B1 (ja)
WO (1) WO2022068218A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117214552A (zh) * 2023-09-22 2023-12-12 中国科学院长春光学精密机械与物理研究所 基于扭秤周期变化的导体表面电势测量方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115047214B (zh) * 2022-03-17 2023-04-25 中国科学院地质与地球物理研究所 一种mems加速度传感器芯片的检测方法及装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060219536A1 (en) * 2005-03-29 2006-10-05 Agency For Science, Technology And Research Acceleration sensitive switch
CN103837706A (zh) * 2014-03-26 2014-06-04 中国科学院地质与地球物理研究所 检测微电子机械***加速度传感器芯片的特性的方法、装置和***
CN104977473A (zh) * 2014-04-09 2015-10-14 北京卓锐微技术有限公司 一种mems器件电容检测方法
CN105259372A (zh) * 2015-10-14 2016-01-20 华东光电集成器件研究所 晶圆级电容式加速度计自动测试***
CN109341744A (zh) * 2018-12-03 2019-02-15 华中科技大学 一种变面积式位移电容的检测装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110018561A1 (en) * 2008-03-26 2011-01-27 Hewlett-Packard Company Capacitive sensor having cyclic and absolute electrode sets
US9032777B2 (en) * 2011-09-16 2015-05-19 Robert Bosch Gmbh Linearity enhancement of capacitive transducers by auto-calibration using on-chip neutralization capacitors and linear actuation
CN103063879B (zh) * 2012-12-28 2014-11-05 苏州中盛纳米科技有限公司 Mems加速度传感器的多参数批量测试设备
CN104781678B (zh) * 2013-04-02 2017-05-24 富士电机株式会社 静电容量型传感器以及非线性输出的校正方法
EP3324192B1 (en) * 2016-11-22 2019-04-10 NXP USA, Inc. Microelectromechanical systems device and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060219536A1 (en) * 2005-03-29 2006-10-05 Agency For Science, Technology And Research Acceleration sensitive switch
CN103837706A (zh) * 2014-03-26 2014-06-04 中国科学院地质与地球物理研究所 检测微电子机械***加速度传感器芯片的特性的方法、装置和***
CN104977473A (zh) * 2014-04-09 2015-10-14 北京卓锐微技术有限公司 一种mems器件电容检测方法
CN105259372A (zh) * 2015-10-14 2016-01-20 华东光电集成器件研究所 晶圆级电容式加速度计自动测试***
CN109341744A (zh) * 2018-12-03 2019-02-15 华中科技大学 一种变面积式位移电容的检测装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117214552A (zh) * 2023-09-22 2023-12-12 中国科学院长春光学精密机械与物理研究所 基于扭秤周期变化的导体表面电势测量方法
CN117214552B (zh) * 2023-09-22 2024-03-22 中国科学院长春光学精密机械与物理研究所 基于扭秤周期变化的导体表面电势测量方法

Also Published As

Publication number Publication date
CN113203939B (zh) 2022-03-18
JP2022554028A (ja) 2022-12-27
AU2021206818B1 (en) 2022-04-14
CN113203939A (zh) 2021-08-03
JP7221453B2 (ja) 2023-02-13

Similar Documents

Publication Publication Date Title
WO2022068218A1 (zh) 一种mems加速度传感器芯片的检测方法及装置
CN204495495U (zh) 一种三维力电容式触觉传感器单元
CN105491492B (zh) 一种自校准硅麦克风装置和校准方法
US9291638B2 (en) Substrate curvature compensation methods and apparatus
US20150096377A1 (en) Systems and methods to determine stiction failures in MEMS devices
WO1992017759A1 (en) Method of testing performance of device for measuring physical quantity by using change of distance between electrodes and physical quantity measuring device provided with function of executing this method
CN210665355U (zh) 精密作动/感知双模式一体化的微机械梳齿结构
CN110455656B (zh) 精密作动/感知双模式一体化的微机械梳齿结构及检测方法
US9174837B2 (en) System and method for detecting surface charges of a MEMS device
CN107560573B (zh) 一种悬丝式可变刚度微纳测头
US20200174035A1 (en) Mems accelerometric sensor having high accuracy and low sensitivity to temperature and aging
CN107990818A (zh) 一种新型悬丝式可变刚度微纳测头
CN100397085C (zh) 悬臂梁-质量块结构的吸合时间式数字加速度传感器
Tavakoli et al. A new method for eliminating cross axis sensitivity in two axis capacitive micromachined accelerometers
CN110906852A (zh) 一种压电执行器输出位移的自感知方法
CN201628722U (zh) 一种大检测电容的微惯性传感器
TWI558991B (zh) 判斷微機電系統裝置是否氣密的方法
CN109269531A (zh) 一种电容式微机械器件及其操作方法
Shavezipur et al. In-line adhesion monitoring and the effects of process variations on adhesion in MEMS
RU2797312C1 (ru) Пьезоэлектрический датчик давления ударных волн
CN111060232A (zh) 一种压电执行器输出力的自感知方法
CN113607975A (zh) 一种用于mems传感器的位置检测与校准装置
CN201365340Y (zh) 自检测硅微机械电容式麦克风
CN111579132A (zh) 一种双路压力检测装置及方法
Wen et al. Surface micromachined polymer capacitive accelerometer array utilizing fringe electrical field

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21873880

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2022533625

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21873880

Country of ref document: EP

Kind code of ref document: A1