WO2022043889A1 - Method for electroless nickel deposition onto copper without activation with palladium - Google Patents
Method for electroless nickel deposition onto copper without activation with palladium Download PDFInfo
- Publication number
- WO2022043889A1 WO2022043889A1 PCT/IB2021/057786 IB2021057786W WO2022043889A1 WO 2022043889 A1 WO2022043889 A1 WO 2022043889A1 IB 2021057786 W IB2021057786 W IB 2021057786W WO 2022043889 A1 WO2022043889 A1 WO 2022043889A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- concentration
- copper
- nickel
- reducing agent
- ligand
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1637—Composition of the substrate metallic substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/34—Anodisation of metals or alloys not provided for in groups C25D11/04 - C25D11/32
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1848—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by electrochemical pretreatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
Definitions
- the invention relates to the field of chemical methods of metal deposition, which are used in electronics, automotive and other areas.
- the invention is for selective deposition of a nickel layer on a copper surface.
- the invention is essential in the production of electrically conductive areas for electronic circuits, where a barrier layer of nickel with excellent adhesion is formed on an electrically conductive copper track to prevent undesired diffusion of copper into other materials in contact with electrically conductive areas and elsewhere where copper is required for final or intermediate coating.
- the patent US6180523B1 of Chwan-Ying Lee discloses three options for forming Cu I Au contacts and bonds using electroless metal deposition with a three- layer system: an adhesive layer, a barrier layer and a finishing layer.
- the three versions have different barrier layers for electroless deposition of Cu or Au.
- the adhesive layer is formed of Ni, Al, polycrystalline silicon or PdSi x on electrically non- conductive material.
- the first barrier layer is electroless deposited on the adhesive layer.
- the first barrier layer consists of Ni, Pd, Co or Ni, Pd and Co alloys.
- the first barrier layer is activated using a solution containing PdCI 2 .
- the top layer of Cu or Au is electroless coated.
- the disadvantage of the known method is that a complex multilayer deposition system is used. Ionic activation with palladium is performed using an expensive and rare material. Palladium is a very active catalyst that adsorbs perfectly not only on the metal; thus, the selectivity of the metal deposition can be lost, and the coated metal can be deposited not only on the desired metal structure but also next to it on the surface of the dielectric substrate.
- Japanese Patent Application No. 9-307234 by Yo. Funada et al. (20/05/1996) (US Patent No. 5,830,563) described a method used to make conductive areas on printed circuit boards where palladium is deposited on a copper surface by immersion into palladium containing bath: by galvanic replacement reactions of copper with palladium. Palladium attached to the surface acts as a catalyst for the electroless deposition of metals.
- activation with palladium for the chemical (electroless) deposition of metals in which palladium ions are reduced by the oxidation reaction of tin ions has been known in the past.
- the disadvantage of the known method is that activation is made by palladium, which uses expensive and rare material.
- Palladium is a highly active catalyst that adsorbs perfectly not only on the metal, thus losing the areal selectivity of the metal deposition, and the coating metal can be deposited not only on the desired metal structure but also near it on the surface of the dielectric substrate.
- EP2233608B1 Elisabeth Zettelmeyer et al. (23/03/2009) invention relates to a final layer coating process for the production of printed circuit boards (PCBs).
- the invention describes a method of electroless coating of nickel on a copper surface.
- the process comprises i) activating the copper surface with palladium ions; (ii) removal of excess palladium ions or their precipitate by a special solution containing at least two different types of acids, wherein one type being an organic amino carboxylic acid, and (iii) deposition of nickel without flow.
- the disadvantage of the known method is that palladium activation is used, which uses expensive and rare substances such as palladium.
- the acid washing procedure is incompatible with many semiconductors, thus limiting the application of the technology. Washing palladium with an acidic solution consumes the expensive and rare palladium even more.
- the patent KR101883249B1 (13/11/2013) described by Tae-Hyeon Lee and Tae- Kwon Lee relates to surface preparation for the electroless deposition of nickel on copper, comprising the step of etching in the liquid etchant for cleaning and roughening the copper surface; after the etching procedure, the copper surface is treated with a preparation liquid containing acid, water and a reducing agent; after this procedure, the prepared surface is activated with an ionic palladium solution.
- the disadvantage of the known method is that the etching procedure severely limits the substrate (dielectric) materials. Moreover, the non-conductive surface can be roughened during etching so that active palladium ions can be adsorbed on surfaces that should not be coated. Also, palladium is expensive and rare.
- the disadvantage of the known method is that palladium is used not only for activation but also for the formation of a barrier layer by electroless deposition. This method uses a lot of expensive palladium.
- a common disadvantage of all the above methods is that palladium forms an island-like structure on the surface to be catalysed, which can lead to a non-uniform coating containing undercoated areas. Therefore, the growing of a barrier layer using such a nucleus of palladium catalyst will produce a non-uniform and heterogeneous barrier coating.
- Palladium is also known to have very strong adsorption on any surface, which reduces the selectivity of the metal layer deposition. Such problems make it difficult to control the process.
- the coated article is then immersed in an electroless plating bath in order the chemical reduction of the nickel would take place, provided that the reducing agent in the activation solution is an alkali metal borohydride which is also used as a reducing agent in the plating bath. It should be noted that an additional process step for electroless deposition of copper - oxidation of the copper surface with an aggressive oxidiser - persulfate is used.
- Patent application US2008/0254205A1 claims electroless deposition of cobalt or nickel alloys from solutions containing two stabilizers, namely hypophosphite and Mo(VI) compound.
- hypophosphite acts as a reducing agent but not as a stabilizer.
- Concerning boron containing reducing agents we use morpholine borane or sodium borohydride, which are not used in above mentioned Application.
- morpholine borane or sodium borohydride which are not used in above mentioned Application.
- nickel alloys could be platted, while the present application allows obtaining pure nickel coatings.
- Such a process is characterised by a low deposition rate, which can be improved by catalytic activation.
- Another disadvantage of the known method is that the activation is used only for chemically deposited coatings that contain phosphorus, which significantly narrows the application of the barrier layer formation method.
- the US patent application 2005/194255A1 Tiwari Chandra S. (04/03/2004) describes a method of metal plating to form interconnect on a semiconductor assembly.
- the patent application US2005/194255A1 teaches about the self-activating process of Ni electroless deposition on a copper substrate, using hypophosphite or dimethylamine borane as a reducing agent.
- the electroless Ni deposition proceeds from alkaline solutions (pH>7) and temperatures > 85°C (in the case of hypophosphite) or > 55°C (in the case of dimethylamine borane).
- the disadvantage of the invention is that initiation of the nickel plating on copper surface is obtained only by reducing the copper oxides without binding them to complexes, thus reduced but still active copper can pollute the plating bath by forming copper contaminants like -hydroxy or -oxy compounds (again) back on the surface or in the bath solution, therefore reducing the quality of the plated layer and limiting the deposition rate.
- Another disadvantage is that the bath solution is limited to an alkaline environment only. Alkaline pH for electroless Ni deposition bath with hypophosphite as reducing agent: pH > 8, temperature limit higher than 85°C.
- the alkaline solution is not preferent in metal plating since surface contaminants such as oxides and hydroxides are formed on the metal surface.
- Boyle Mike et al. (17/10/2008) describe the method of electroless plating of triple metal coating on Al or Cu surface: (a) a Ni-P layer, (b) a Pd layer and, optionally, (c) an Au layer.
- the first Ni-P layer is deposited by means of the electroless Ni deposition method, using hypophosphite as a reducing agent.
- the disadvantage of the invention is that the mentioned process is not self-activating one, since Pd activation is required prior to the Ni-P deposition.
- the aim of the invention is to create economically viable and rare materials, such as palladium-saving technology for nickel barrier layer on copper surface formation for electrically conductive traces, and contacts production, expand its field of application, enabling nickel barrier layer to be formed directly on the copper surface without auxiliary activation of palladium or the similar layer formation, therefore, reducing the number of process steps.
- Practically pure nickel coatings can be obtained by this method, in contrast to the methods described in the analogues.
- the essence of the solution according to proposed invention is that in a method for nickel deposition on a surface of an item that is produced from copper or has a copper layer on the item comprising: immersing said item into one or more baths, at least one bath containing a reducing agent; at least one bath being adapted for electroless plating of nickel wherein, said reducing agent comprises boronic or phosphoric compounds, comprising morpholine borane (C 4 H 9 BNO), or dimethylamine borane (C 2 H 7 BN), or sodium tetrahydroborate (NaBH 4 ), or sodium hypophosphite (NaH 2 PO 2 ) and said reducing agent directly or indirectly reduces insoluble copper (I) or copper (II) compounds on the surface of the item which is produced from copper or on the copper layer of the item; and at least one of the mentioned baths comprises a ligand or mixture thereof, the ligand in the bath facilitating the dissolution of incompletely reduced insoluble copper compounds - copper oxides
- Said ligand or mixture thereof consists of any water-soluble chemical compounds capable of forming sufficiently stable complexes with copper ions, comprising amino acetic acid (C 2 H 5 NO 2 ), nitrilotriacetic acid (C 6 H 9 NO 6 ), diethylenetriaminepentaacetic acid (C 14 H 23 N 3 O 10 ) and their salts, tartaric acid (C 4 H 6 O 6 ); citric acid (C 6 H 8 O 7 ) and their salts; ammonia (NH 3 ), ethylenediamine (C 2 H 8 N 2 ), diethylenetriamine (C 4 H 13 N 3 ), N,N,N′,N′-tetrakis (2-hydroxypropyl) ethylenediamine (C14H32N2O4).
- amino acetic acid C 2 H 5 NO 2
- nitrilotriacetic acid C 6 H 9 NO 6
- diethylenetriaminepentaacetic acid C 14 H 23 N 3 O 10
- tartaric acid C 4 H
- Said method further comprises: (i) immersing said item in the activation bath, which comprises said reducing agent and said ligand wherein electrons which appear after an anodic oxidation reaction of said reducing agent from the activation bath activate the copper surface by reducing Cu(I) and Cu(II) oxides and/or oxy-hydroxy compounds on the surface, at the same time, anodic catalytic or thermal decomposition reactions occur, releasing hydrogen, also reacting as an active reducing agent with the Cu(I) and Cu (II) compounds on the copper surface, leaving the substantially pure copper surface where nickel is then deposited; and; (ii) immersing said item with the activated copper surface into a second, electroless nickel plating bath, in which nickel is electrolessly deposited on the copper surface, wherein the immersing said item into the second electroless nickel plating bath occurs after immersing said item in the activation bath without any intermediate step.
- Said method comprises the single step of immersing said item directly into the electroless nickel plating bath comprising a reducing agent selected from the group consisting of said boronic or phosphoric reducing compounds, which concentrations are selected to reduce the insoluble copper (I) and copper (II) compounds present on the surface of the item produced from copper or having a copper layer; and the a ligand or mixture of ligands selected from a group of said chemical compounds, selecting concentrations of said chemical compounds of said ligand or mixture of ligands such that said chemical compound dissolves the incompletely reduced insoluble copper compounds by binding them to soluble complexes so that substantially pure copper surfaces, on which nickel is deposited, remain.
- a reducing agent selected from the group consisting of said boronic or phosphoric reducing compounds, which concentrations are selected to reduce the insoluble copper (I) and copper (II) compounds present on the surface of the item produced from copper or having a copper layer
- the a ligand or mixture of ligands selected from a group of said
- Said activation bath consists of sodium hypophosphite (NaH 2 PO 2 ) solution with a concentration from 0.5 M up to the limit of solubility and said ligands or mixtures thereof in a concentration from 0.001 M to the solubility limit, and the immersion time ranges from 1 to 15 min at a temperature of 80-96 °C.
- NaH 2 PO 2 sodium hypophosphite
- Said activation bath consists of morpholine borane (C 4 H 9 BNO) solution with a concentration from 0.01 M up to the limit of solubility and said ligands or mixtures thereof in a concentration from 0.001 M to the solubility limit, and the immersion time ranges from 1 to 15 min at a temperature of 18-50 °C.
- morpholine borane C 4 H 9 BNO
- Said activation bath consists of dimethylamine borane (C 2 H 7 BN) solution with a concentration from 0.01 M up to the limit of solubility and said ligands or mixtures thereof in a concentration from 0.001 M to the solubility limit, and the immersion time ranges from 1 to 15 min at a temperature of 18-50 °C.
- dimethylamine borane (C 2 H 7 BN) solution with a concentration from 0.01 M up to the limit of solubility and said ligands or mixtures thereof in a concentration from 0.001 M to the solubility limit, and the immersion time ranges from 1 to 15 min at a temperature of 18-50 °C.
- Said activation bath consists of sodium tetrahydroborate (NaBH 4 ) solution with a concentration from 0.01 M up to the limit of solubility and said ligands or mixtures thereof in a concentration from 0.001 M to the solubility limit and the immersion time ranges from 1 to 15 min at a temperature of 18-50 °C.
- NaBH 4 sodium tetrahydroborate
- Said electroless nickel plating bath consists of nickel sulphate (NiSO 4 ) at a concentration of 0.05-0.5 M; the reducing agent of sodium hypophosphite (NaH 2 PO 2 ) at a concentration of 0.25-3 M; amino acetic acid (C 2 H 5 NO 2 ) at a concentration of 0.25- 1 M; and sodium hydroxide (NaOH) at a concentration sufficient for required pH adjustment.
- NiSO 4 nickel sulphate
- NaH 2 PO 2 sodium hypophosphite
- amino acetic acid C 2 H 5 NO 2
- NaOH sodium hydroxide
- Said surface of said item, which is produced by copper, is plated by nickel using a sequence of two different nickel plating baths, the first nickel plating bath containing sodium hypophosphite as the reducing agent, initially, an item which is necessary to metalize is immersed in an alkaline electroless nickel plating bath with pH in the range of 8.5-10.0, and later said item is immersed in the second nickel plating bath, which is an acidic electroless nickel plating bath with pH in the range of 4.0-6.0.
- Said electroless nickel plating bath consists of nickel sulphate (NiSO 4 ) at a concentration of 0.05-0.5 M; the reducing agent of morpholine borane (C 4 H 9 BNO) at a concentration of 0.01-1 M; the ligand of diethylenetriamine (C 4 H 13 N 3 ) at a concentration of 0.001 -0.5 M; sodium hydroxide (NaOH) at a concentration sufficient for pH adjustment to pH 5.0-7.8; and plating at a temperature of 18-35 °C.
- NiSO 4 nickel sulphate
- C 4 H 9 BNO reducing agent of morpholine borane
- C 4 H 13 N 3 ligand of diethylenetriamine
- NaOH sodium hydroxide
- Said electroless nickel plating bath consists of nickel sulphate (NiSO 4 ) at a concentration of 0.05-0.5 M; the reducing agent of dimethylamine borane (C 2 H 7 BN) at a concentration of 0.01-1 M; the ligand of diethylenetriamine (C 4 H 13 N 3 ) at a concentration of 0.001 -0.5 M; sodium hydroxide (NaOH) at a concentration sufficient for pH adjustment to pH 5.0-7.8; plating at a temperature of 18-35 °C.
- NiSO 4 nickel sulphate
- C 2 H 7 BN dimethylamine borane
- C 4 H 13 N 3 ligand of diethylenetriamine
- NaOH sodium hydroxide
- Said electroless nickel plating bath consists of nickel sulphate (NiSO 4 ) at a concentration of 0.05-0.5 M; the reducing agent of sodium tetrahydroborane (NaBH 4 ) at a concentration of 0.01-0.5 M; the ligand of ethylenediamine (C 2 H 8 N 2 ) at a concentration of 0.001-0.5 M; the ligand of potassium sodium tartrate (KNaC 4 H 4 O 6 ) at a concentration of 0.05-0.2 M; disodium thiosulphate (Na 2 S 2 O 3 ) at a concentration of 0.001-0.01 M; sodium hydroxide (NaOH) at a concentration sufficient for pH adjustment to pH 12.0-13.0; platting at a temperature of 18-35 °C.
- NiSO 4 nickel sulphate
- NaBH 4 sodium tetrahydroborane
- NaBH 4 sodium tetrahydroborane
- KNaC 4 H 4 O 6 potassium sodium tart
- Said nickel electroless plating bath consists of nickel sulphate (NiSO 4 ); sodium hydroxide (NaOH); the ligand of amino acetic acid (C 2 H 5 NO 2 ), and the reducing agent of sodium hypophosphite (NaH 2 PO 2 ) which concentration exceeds 0.8 M.
- Said electroless nickel plating bath consists of nickel sulphate (NiSO 4 ) at a concentration of 0.05-0.5 M; the reducing agent of sodium hypophosphite (NaH 2 PO 2 ) at a concentration of 0.8-3 M; the ligand of amino acetic acid (C 2 H 5 NO 2 ) at a concentration of 0.25-1 M; sodium hydroxide (NaOH) at a concentration sufficient for pH adjustment to pH 4.0-6.0; and plating at a temperature of 80-96 °C.
- NiSO 4 nickel sulphate
- NaH 2 PO 2 sodium hypophosphite
- C 2 H 5 NO 2 ligand of amino acetic acid
- NaOH sodium hydroxide
- Said electroless nickel plating bath consists of nickel sulphate (NiSO 4 ) at a concentration of 0.05-0.5 M; the reducing agent of morpholine borane (C 4 H 9 BNO) at a concentration of 0.1-1 M; the ligand of diethylenetriamine (C 4 H 13 N 3 ) at a concentration of 0.001 -0.5 M sodium hydroxide (NaOH) at a concentration sufficient for pH adjustment to pH 5.0-7.8; and plating at a temperature of 18-35 °C.
- NiSO 4 nickel sulphate
- C 4 H 9 BNO reducing agent of morpholine borane
- CaOH sodium hydroxide
- Said electroless nickel plating bath consists of nickel sulphate (NiSO 4 ) at a concentration of 0.05-0.5 M; the reducing agent of dimethylamine borane (C 2 H 7 BN) at a concentration of 0.1-1 M; the ligand of diethylenetriamine (C 4 H 13 N 3 ) at a concentration of 0.001 -0.5 M, sodium hydroxide (NaOH) at a concentration sufficient for pH adjustment to pH 5.0-7.8; and platting at a temperature of 18-35 °C.
- NiSO 4 nickel sulphate
- C 2 H 7 BN dimethylamine borane
- C 4 H 13 N 3 ligand of diethylenetriamine
- NaOH sodium hydroxide
- Said electroless nickel plating bath consists of nickel sulphate (NiSO 4 ) at a concentration of 0.05-0.5 M; the reducing agent of sodium tetrahydroborane (NaBH 4 ) at a concentration of 0.02-0.5 M; a ligand of ethylenediamine (C 2 H 8 N 2 ) at a concentration of 0.001-0.5 M; the ligand of potassium sodium tartrate (KNaC 4 H 4 O 6 ) at a concentration 0.05-0.2 M; disodium thiosulphate (Na 2 S 2 O 3 ) at a concentration of 0.001-0.01 M; sodium hydroxide (NaOH) at a concentration sufficient for pH adjustment to pH 12.0-13.0; and platting at a temperature of 18-35 °C.
- NiSO 4 nickel sulphate
- NaBH 4 sodium tetrahydroborane
- CaBH 4 sodium tetrahydroborane
- KNaC 4 H 4 O 6 lig
- Said method comprises determination of the concentration and/or process timing experimentally or by computer-implemented or semi-automatic means according to read and loaded the information on the quality of the deposited nickel layer of the item and the concentrations of the reagents in the baths, and on-site computing the concentration of the baths required for the process and/or the timing of the chemical process.
- the present invention is related to the formation of a nickel barrier layer on a copper surface for microelectronics or a decorative coating without the use of palladium activation.
- the practical advantage of the present invention is that the use of precious and rare metals such as palladium is eliminated.
- the proposed method significantly improves the quality of the barrier layer formation and the spatial selectivity resolution of the deposited electrically conductive areas, as palladium activation is not used.
- Palladium is a very active metal, so it absorbs and activates not only the desired regions but also the substrate next to it. As a result, nickel can later be deposited on undesired areas and create short circuits in electronic circuits.
- This method also allows the activation of copper surfaces for nickel plating faster than the other methods mentioned, because a ligand is used together with the reducing agent.
- Another essential advantage of this method is that nickel is formed directly on the copper surface and thus shortens the number of process steps and thus the duration as well.
- This method unlike the alternatives for palladium-free copper surface activation mentioned in the analogues, allows the deposition of pure (not contaminated by side- products) nickel coatings.
- Electrically conductive areas in electronic devices are mainly formed from copper, as copper has one of the highest electrical conductivity (higher than that of gold), is relatively inexpensive, and can be easily deposited on a dielectric substrate such as fibre-reinforced resins, polymers, or even ceramics.
- copper atoms diffuse into other materials such as solder, which cause degradation of the copper layer.
- copper tends to oxidise easily.
- a barrier layer is deposited. The most convenient is to form a barrier layer of nickel into which no diffusion of copper atoms takes place, and a thin oxide-protective and electrically conductive layer of gold or platinum can be easily deposited on this layer by immersion method.
- Electroless deposition of nickel on a copper surface using electroless nickel- plating baths containing phosphorus compounds is practically impossible or a prolonged process without additional activation or sensitisation, and, therefore, a surface activation step is introduced.
- Activation is usually carried out with palladium, but the process is expensive and difficult to control the spatial selectivity of the deposition.
- the present invention is intended for the activation of a copper surface for electroless deposition of nickel from a bath.
- the process can be implemented in two ways. First, by activation of the intended metallised areas with an activation solution (bath) consisting of reducing agents containing boron or phosphorus and comprising copper ion ligands or mixtures thereof, followed by immersion of the activated copper surface in an electroless nickel plating bath in which a nickel layer is selectively formed directly on the copper surface to be coated.
- an activation solution bath consisting of reducing agents containing boron or phosphorus and comprising copper ion ligands or mixtures thereof
- Nickel can be deposited directly on the copper surface without additional surface activation step, using morpholine borane (C 4 H 9 BNO) or dimethylamine borane (C 2 H 7 BN) or sodium tetraborane (NaBH 4 ) or higher (over 0.8 M) concentration of sodium hypophosphate (NaH 2 PO 2 ) as a reducing agent in electroless nickel plating baths.
- C 4 H 9 BNO morpholine borane
- C 2 H 7 BN dimethylamine borane
- NaBH 4 sodium tetraborane
- concentration of sodium hypophosphate NaH 2 PO 2
- the surface is washed or wiped with sulfuric acid H 2 SO 4 , concentration: 0.5- 4 M for 3-15 minutes. This step is performed if the surface is strongly oxidized. This step can be omitted if all other multilayer coating steps are performed immediately (within 5 minutes) after the chemical deposition of copper.
- the activation of the surface by an activation bath follows, optionally using one of the following activation processes by dipping in: a) sodium hypophosphite (NaH 2 PO 2 ) solution with a concentration from 0.5 M up to the limit of solubility and which contains one or more copper ions ligand, which concentration is from 0.01 M up to the limit of solubility and the immersion time ranges from 1 to 15 minutes at 80-96°C temperature.
- the surface is washed with 0.5 M NaH 2 PO 2 solution at 80-96°C for 1 second.
- morpholine borane solution with a concentration from 0.01 M up to the limit of solubility and which contains one or more copper ions ligands, which concentration is from 0.01 M up to the limit of solubility and the immersion time ranges from 1 to 15 minutes at 18-50°C temperature.
- the surface is washed with water at 80-96°C for 1 second.
- dimethylamine borane solution with a concentration from 0.01 M up to the limit of solubility and which contains one or more copper ions ligands, and the immersion time ranges from 1 to 15 minutes at 18-50°C temperature.
- the surface is washed with water at 80-96°C for 1 second.
- NaBH 4 sodium tetrahydroborate
- NaOH sodium hydroxide
- NaOH sodium hydroxide
- NiSO 4 nickel sulphate
- NiSO 4 nickel sulphate
- Activation route a after the activation, there is no need to wash the part; it can be immersed directly in a nickel-plating bath containing the same reducing agent - sodium hypophosphite.
- Activation routes b), c), and d are deposited.
- the process takes place at room temperature, low reagent concentrations are used; can be platted in a phosphorus-free electroless nickel-plating bath using morpholine borane or dimethylamine borane as reducing agents; practically pure nickel coatings are deposited.
- the advantage of described baths is that the activation can be performed in any of the described baths, and then the nickel plating can also be performed in any of the described ones.
- acidic (not alkaline) bath for electroless Ni deposition solutions with hypophosphite as a reducing agent is used with pH 4-6 at a lower temperature of 80°C.
- the acidic solution is preferred since no surface contaminants such as oxides and hydroxides are formed on the metal surface due to their dissolution
- Another advantage is that pure nickel coatings without phosphorus impurities can be deposited using baths in which the reducing agents are boron compounds.
- a nickel coating can be deposited on a copper surface by skipping treatment with an activating bath.
- a chemical nickel-plating solution containing at least one of the following reducing agents is used: morpholine borane (C 4 H 9 BNO), dimethylamine borane (C 2 H 7 BN), sodium tetrahydroborate (NaBH 4 ) or sodium hypophosphite (NaH 2 PO 2 ) in higher concentrations (more than 0.8 M), copper may be coated with nickel or its alloys without additional activation and washing steps.
- the surface is washed or wiped with sulfuric acid H 2 SO 4 with a concentration of 0.5-4 M for 3-15 minutes. This step is performed if the surface is strongly oxidised. This step can be omitted if all other multilayer coating steps are performed immediately (within 5 minutes) after step by step. This is followed by electroless deposition of nickel by immersing the item into electroless metallization baths No. 5 or No. 6, or No. 7.
- NiSO 4 nickel sulphate
- NiSO 4 nickel sulphate
- NiSO 4 nickel sulphate
- NiSO 4 nickel sulphate
- NaOH sodium hydroxide
- amino acetic acid C 2 H 5 NO 2
- sodium hypophosphite NaH 2 PO 2
- NiSO 4 nickel sulphate
- the ligand in a bath facilitates the dissolution of incompletely reduced, insoluble copper compounds by binding them to soluble complexes, leaving a substantially pure copper surface where nickel is then deposited.
- the ligand produces a complex with insoluble copper (from copper oxides, thus obtaining completely different function relative to the state of the art process.
- the ligands can be chosen but not limited to the following Cu(ll) ligand groups: amines, polyhydroxilic alcohols, polycarboxylic acids, hydroxy-polycarboxylic acids, polyamine-polycarboxylic acids.
- the ligand or their mixture thereof consist of any water-soluble chemical compounds capable of forming sufficiently stable complexes with copper ions at a high rate, comprising, but are not limited to, amino acetic acid (C 2 H 5 NO 2 ), nitrilotriacetic acid (CeHgNOe), ethylenediaminetetraacetic acid (C 10 H 16 N 2 O 8 ), diethylenetriaminepentaacetic acid (C 14 H 23 N 3 O 10 ) and their salts, tartaric acid (C 4 H 6 0e); citric acid (C 6 H 8 O 7 ) and their salts; ammonia (NH 3 ), N, N, N ', N'-tetrakis (2-hydroxypropyl) ethylenedi
- Optimal concentrations of reagents in the baths and process durations can be determined using an automated method for determining solution concentrations and I or process durations, using equipment that indicates and loads the information about the surface of the item and condition of the bath to a computer, and calculates concentrations of the baths and I or chemical process data in situ based on the loaded information. Optimization by iterations (cycles) can be performed in this way.
- the invention described a method for nickel deposition on a surface of an item that is produced from copper or has a copper layer on it comprising steps of reducing, dissolving, and plating.
- these steps can happen one after another in a sequential way and possibly such order is enforced by changing the baths between the steps.
- these steps can also happen in parallel or substantially simultaneously.
- the chemistry demands that at least some reduction has to happen before the solving can take place, it is the reduction of insoluble copper compounds and dissolution of such insoluble compounds by the formation of soluble complex compounds that occur actually rather simultaneously because the reduction reaction rate is much higher (preferably at least two or more orders in magnitude), comparing with that of dissolution reaction.
- the advantage of this embodiment is that all the processes appear in a single bath (single step) because the electroless nickel plating bath contains every mentioned compound: reducer and ligand (hence a suitable mixture of all required components).
- the invention has been described in terms of specific embodiments, which should be considered as examples only and not limiting the practical scope of the invention. Therefore, any changes and modifications to the technological processes, materials and reactions are possible provided that the changes and modifications do not depart from the definition of the patent invention.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202180053197.3A CN116324032A (en) | 2020-08-27 | 2021-08-25 | Electroless nickel deposition on copper without palladium activation |
EP21759163.5A EP4204599A1 (en) | 2020-08-27 | 2021-08-25 | Method for electroless nickel deposition onto copper without activation with palladium |
KR1020237010227A KR20230056751A (en) | 2020-08-27 | 2021-08-25 | Method for electroless nickel deposition on copper without activation by palladium |
JP2023513700A JP2023538951A (en) | 2020-08-27 | 2021-08-25 | Method for depositing electroless nickel on copper without activation with palladium |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
LT2020542A LT6899B (en) | 2020-08-27 | 2020-08-27 | Method for electroless nickel deposition onto copper without activation with palladium |
LTLT2020542 | 2020-08-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2022043889A1 true WO2022043889A1 (en) | 2022-03-03 |
WO2022043889A4 WO2022043889A4 (en) | 2022-04-21 |
Family
ID=73455773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2021/057786 WO2022043889A1 (en) | 2020-08-27 | 2021-08-25 | Method for electroless nickel deposition onto copper without activation with palladium |
Country Status (7)
Country | Link |
---|---|
US (1) | US20220064801A1 (en) |
EP (1) | EP4204599A1 (en) |
JP (1) | JP2023538951A (en) |
KR (1) | KR20230056751A (en) |
CN (1) | CN116324032A (en) |
LT (1) | LT6899B (en) |
WO (1) | WO2022043889A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116713635A (en) * | 2023-08-08 | 2023-09-08 | 江西兆驰半导体有限公司 | Solder paste preparation method, solder paste and application of solder paste in LED chip packaging |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4002778A (en) | 1973-08-15 | 1977-01-11 | E. I. Du Pont De Nemours And Company | Chemical plating process |
JPH09307234A (en) | 1996-05-20 | 1997-11-28 | Nec Corp | Multilayer wiring structure and manufacture thereof |
US5695810A (en) | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
US5830563A (en) | 1995-11-29 | 1998-11-03 | Nec Corporation | Interconnection structures and method of making same |
US6180523B1 (en) | 1998-10-13 | 2001-01-30 | Industrial Technology Research Institute | Copper metallization of USLI by electroless process |
US6794288B1 (en) | 2003-05-05 | 2004-09-21 | Blue29 Corporation | Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation |
US20050194255A1 (en) * | 2004-03-04 | 2005-09-08 | Tiwari Chandra S. | Self-activated electroless metal deposition |
US20080254205A1 (en) | 2007-04-13 | 2008-10-16 | Enthone Inc. | Self-initiated alkaline metal ion free electroless deposition composition for thin co-based and ni-based alloys |
EP2177646A1 (en) | 2008-10-17 | 2010-04-21 | Atotech Deutschland Gmbh | Stress-reduced Ni-P/Pd stacks for bondable wafer surfaces |
US20110051387A1 (en) | 2009-08-10 | 2011-03-03 | Sumitomo Bakelite Company, Ltd. | Method for electroless nickel-palladium-gold plating, plated product, printed wiring board, interposer and semiconductor apparatus |
EP2233608B1 (en) | 2009-03-23 | 2016-03-23 | ATOTECH Deutschland GmbH | Pre-treatment process for electroless nickel plating |
KR101883249B1 (en) | 2017-03-31 | 2018-08-30 | (주)엠케이켐앤텍 | A pretreating-activating solution for an electroless nickel plating, a method for electroless plating a thin-nickel and a method for surface-treating using the same, and a printed circuit board comprising an electroless thin-nickel |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5235139A (en) * | 1990-09-12 | 1993-08-10 | Macdermid, Incorprated | Method for fabricating printed circuits |
PL1854477T3 (en) * | 2006-03-16 | 2017-02-28 | Dyax Corp. | Peptides inhibiting plasma kallikrein for use in the treatment of ophthalmic disorders. |
EP2671969A1 (en) * | 2012-06-04 | 2013-12-11 | ATOTECH Deutschland GmbH | Plating bath for electroless deposition of nickel layers |
-
2020
- 2020-08-27 LT LT2020542A patent/LT6899B/en unknown
- 2020-12-15 US US17/122,269 patent/US20220064801A1/en not_active Abandoned
-
2021
- 2021-08-25 EP EP21759163.5A patent/EP4204599A1/en active Pending
- 2021-08-25 JP JP2023513700A patent/JP2023538951A/en active Pending
- 2021-08-25 KR KR1020237010227A patent/KR20230056751A/en unknown
- 2021-08-25 WO PCT/IB2021/057786 patent/WO2022043889A1/en unknown
- 2021-08-25 CN CN202180053197.3A patent/CN116324032A/en active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4002778A (en) | 1973-08-15 | 1977-01-11 | E. I. Du Pont De Nemours And Company | Chemical plating process |
US5830563A (en) | 1995-11-29 | 1998-11-03 | Nec Corporation | Interconnection structures and method of making same |
JPH09307234A (en) | 1996-05-20 | 1997-11-28 | Nec Corp | Multilayer wiring structure and manufacture thereof |
US5695810A (en) | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
US6180523B1 (en) | 1998-10-13 | 2001-01-30 | Industrial Technology Research Institute | Copper metallization of USLI by electroless process |
US6794288B1 (en) | 2003-05-05 | 2004-09-21 | Blue29 Corporation | Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation |
US20050194255A1 (en) * | 2004-03-04 | 2005-09-08 | Tiwari Chandra S. | Self-activated electroless metal deposition |
US20080254205A1 (en) | 2007-04-13 | 2008-10-16 | Enthone Inc. | Self-initiated alkaline metal ion free electroless deposition composition for thin co-based and ni-based alloys |
EP2177646A1 (en) | 2008-10-17 | 2010-04-21 | Atotech Deutschland Gmbh | Stress-reduced Ni-P/Pd stacks for bondable wafer surfaces |
EP2233608B1 (en) | 2009-03-23 | 2016-03-23 | ATOTECH Deutschland GmbH | Pre-treatment process for electroless nickel plating |
US20110051387A1 (en) | 2009-08-10 | 2011-03-03 | Sumitomo Bakelite Company, Ltd. | Method for electroless nickel-palladium-gold plating, plated product, printed wiring board, interposer and semiconductor apparatus |
KR101883249B1 (en) | 2017-03-31 | 2018-08-30 | (주)엠케이켐앤텍 | A pretreating-activating solution for an electroless nickel plating, a method for electroless plating a thin-nickel and a method for surface-treating using the same, and a printed circuit board comprising an electroless thin-nickel |
Also Published As
Publication number | Publication date |
---|---|
LT6899B (en) | 2022-04-11 |
EP4204599A1 (en) | 2023-07-05 |
KR20230056751A (en) | 2023-04-27 |
US20220064801A1 (en) | 2022-03-03 |
WO2022043889A4 (en) | 2022-04-21 |
CN116324032A (en) | 2023-06-23 |
JP2023538951A (en) | 2023-09-12 |
LT2020542A (en) | 2022-03-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3892730B2 (en) | Electroless gold plating solution | |
US20050266165A1 (en) | Method for metallizing plastic surfaces | |
US9551073B2 (en) | Method for depositing a first metallic layer onto non-conductive polymers | |
CN105018904A (en) | Chemical nickel plating solution for flexible printed circuit board and plating construction method thereof | |
CN107868947B (en) | Activating solution, preparation method thereof and palladium-free activated chemical nickel plating method | |
US20140076618A1 (en) | Method of forming gold thin film and printed circuit board | |
EP0680523A1 (en) | Preparation of alumina ceramic surfaces for electroless and electrochemical metal deposition | |
WO2022043889A1 (en) | Method for electroless nickel deposition onto copper without activation with palladium | |
JP5371465B2 (en) | Non-cyan electroless gold plating solution and conductor pattern plating method | |
JP4311449B2 (en) | Electroless plating method and non-conductive object to be plated on which a plating film is formed | |
CN105051254A (en) | Method for activating a copper surface for electroless plating | |
JP2003293143A (en) | Cleaning agent for palladium catalyst, method for cleaning palladium catalyst, method for plating electronic parts using the agent, and electronic parts | |
EP2270255A1 (en) | Beta-amino acid comprising electrolyte and method for the deposition of a metal layer | |
JP4842620B2 (en) | Method for manufacturing printed wiring board having high-density copper pattern | |
EP1953262A1 (en) | Catalyst treatment method, electroless plating method, and method for formation of circuit by using the electroless plating method | |
JP5808042B2 (en) | Palladium catalyst-imparting solution comprising palladium ammine complex salt aqueous solution and electroless nickel plating method for copper wiring board using the same | |
GB2253415A (en) | Selective process for printed circuit board manufacturing employing noble metal oxide catalyst. | |
JP2002180260A (en) | Method of forming nickel film by electroless nickel plating | |
EP0070061B1 (en) | A solution for the electroless deposition of gold-alloys onto a substrate | |
CN100346454C (en) | A metallized contact layer structure of silicon based device and method for making same | |
KR101100084B1 (en) | Method for forming copper interconnection layer | |
WO2012158056A1 (en) | Method for applying a nanocrystalline coating consisting of metals and alloys to metal parts | |
CN104716089A (en) | Method for conducting non-electric metal deposition on metal layer and application | |
JP2001156210A (en) | Wiring board for mounting semiconductor and producing method therefor | |
JP2012219273A (en) | Plating apparatus and plating method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 21759163 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2023513700 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2021759163 Country of ref document: EP Effective date: 20230213 |
|
ENP | Entry into the national phase |
Ref document number: 20237010227 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |