WO2021120906A1 - 直写光刻***和直写光刻方法 - Google Patents

直写光刻***和直写光刻方法 Download PDF

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WO2021120906A1
WO2021120906A1 PCT/CN2020/126362 CN2020126362W WO2021120906A1 WO 2021120906 A1 WO2021120906 A1 WO 2021120906A1 CN 2020126362 W CN2020126362 W CN 2020126362W WO 2021120906 A1 WO2021120906 A1 WO 2021120906A1
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Prior art keywords
light
light spot
direct
spot
deformed
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PCT/CN2020/126362
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English (en)
French (fr)
Chinese (zh)
Inventor
浦东林
朱鹏飞
朱鸣
邵仁锦
张瑾
王冠楠
陈林森
Original Assignee
苏州苏大维格科技集团股份有限公司
苏州大学
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Priority to JP2022513961A priority Critical patent/JP7345769B2/ja
Priority to KR1020227021405A priority patent/KR20220106166A/ko
Publication of WO2021120906A1 publication Critical patent/WO2021120906A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Definitions

  • the present invention relates to the field of micro-nano processing technology, in particular to a direct-write lithography system and a direct-write lithography method.
  • Optoelectronics is a fast-developing high-tech after microelectronics.
  • Current laser devices, photodetectors, diffraction gratings, etc. are the initial development products of optoelectronics technology.
  • Optoelectronics technology has broad development prospects in display, imaging, and detection in the future.
  • the circuit in the microelectronic device is a 2D pattern, and the pattern duty cycle is not high, while the optoelectronic device pays more attention to the 3D surface morphology of the microstructure, with multiple steps and continuous morphology as the main features. Therefore, the processing requirements of 3D microstructures for new applications of optoelectronics are different from the current requirements of microelectronics, and the surface requirements have changed from 2D to 3D. Although microprisms and microlenses, which are commonly used in current products, also have 3D structures, they are still regular structures. With the development of technology, the microstructure requirements for optoelectronic applications have changed from regular 3D to complex 3D. The processing methods of complex 3D structures are of great scientific significance for many research supports in the field of optoelectronics, and are of strategic significance for the development of new industries and new applications.
  • the main micro-processing techniques to achieve 3D micro-nano morphology include precision diamond turning, 3D printing, and photolithography.
  • Diamond turning is the preferred method for making tens of microns in size and regularly arranged 3D topography microstructures. Its typical application is microprism film; 3D printing technology can produce complex 3D structures, but the resolution of traditional galvanometer scanning 3D printing technology is Tens of microns; DLP projection 3D printing has a resolution of 10-20um; two-photon 3D printing technology, although the resolution can reach sub-micrometers, is a serial processing method with extremely low efficiency.
  • the microlithography technology based on the photoresist exposure mode is still the mainstream technology of modern micromachining. Its photoresist material is mature and the process is controllable, and it is the highest precision processing method that can be achieved so far.
  • 3D topography lithography technology is still in its infancy and has not formed a mature technology system.
  • the current progress is as follows:
  • the traditional mask engraving method is used to make multi-step structures, combined with ion etching to control the depth of the structure, the process requires multiple alignments, and the process requirements are high, and it is difficult to process continuous 3D topography.
  • the gray-scale mask exposure method The technical solution is to make a half-tone mask (half-tone). After the mercury lamp light source is irradiated, a gray-scale distributed light field is generated, and the photoresist is exposed to light to form a 3D surface structure. .
  • this type of reticle is difficult to manufacture, has poor structural resolution, complicated processes, and is very expensive.
  • the moving mask exposure method is more suitable for making regular microlens arrays and other structures.
  • the acousto-optic scanning direct writing method uses single-beam direct writing, which has low efficiency and also has the problem of graphic stitching.
  • Electron beam gray-scale direct writing method representative manufacturers and product models include: Japan Joel JBX9300, Germany Vistec, Leica VB6, this method is oriented to relatively large-format devices with extremely low production efficiency, limited by the energy of the electron beam, and 3D appearance The depth control ability is insufficient and can only be applied to the preparation of small-scale 3D microstructures.
  • Digital gray-scale photolithography is a micro-nano processing technology developed by combining gray-scale masks and digital light processing technologies.
  • DMD spatial light modulators are used as digital masks to process continuous three-dimensional surface shapes through one exposure.
  • the embossed microstructure of adopts a step-by-step stitching method for graphics larger than one exposure field of view.
  • the main disadvantage is that the gray-scale modulation capability is limited by the gray-scale level of the DMD, there are obvious steps and gaps between the fields of view, and the uniformity of the light intensity within the spot will affect the surface quality of the 3D profile.
  • the purpose of the present invention is to provide a direct-write lithography system and a direct-write lithography method to realize maskless grayscale lithography with complex surface three-dimensional topography and structure, and to improve lithography accuracy and lithography efficiency.
  • a direct writing lithography system which includes a direct writing light source, a movement mechanism, a central controller, a light spot pattern input device, and a projection optical device;
  • the direct writing light source is used to provide a starting light beam
  • the movement mechanism is used to control the projection optical device to scan along a preset path relative to the photolithography to be exposed, and is used to send out position data of a reference point;
  • the central controller is configured to read the corresponding spot image data in the spot pattern file sequence according to the position data, and upload the spot image data to the spot pattern input device;
  • the light spot pattern input device is used to modulate the initial light beam provided by the direct writing light source to generate pattern light according to the light spot image data, and input the pattern light into the projection optical device;
  • the projection optical device controls the pattern light to project a deformed spot on the surface of the photolithography element, and scans along the preset path under the control of a motion mechanism. During the scanning process, the spot image data varies with the position data. And change, forming a preset controllable deformable light spot.
  • the direct writing lithography system further includes a three-dimensional profile generation device and a three-dimensional profile analysis device;
  • the three-dimensional shape generating device is used to generate three-dimensional shape data
  • the three-dimensional profile analysis device is used to generate a light spot pattern file sequence according to the three-dimensional profile data and preset parameters of the direct writing lithography system, the light spot pattern file sequence including a coordinate sequence and a sequence corresponding to the coordinate sequence Corresponding light spot image data sequence.
  • the inside of the deformed light spot has a fixed light intensity
  • the light spot image data includes a light spot shape
  • the preset parameters of the direct writing lithography system include the preset path, scanning speed, and the fixed light intensity
  • the inside of the deformed light spot is gray-scale distribution light intensity
  • the light spot image data includes the light spot shape and the light intensity distribution within the light spot
  • the preset parameters of the direct writing lithography system include the preset path and scanning speed.
  • the central controller is also used to transmit a displacement instruction to the motion mechanism, so that the projection optical device moves in a three-dimensional direction relative to the photolithography element, so as to realize the displacement and focus of the projection optical device .
  • the present invention also provides a direct writing lithography method, which includes the following steps:
  • S2 Generate a spot pattern file sequence according to the three-dimensional topography data and preset parameters of the direct writing lithography system, the spot pattern file sequence including a coordinate sequence and a spot image data sequence corresponding to the coordinate sequence;
  • S3 Generate pattern light according to the light spot image data sequence, project the pattern light onto the surface of the photolithography to be exposed to form a deformed light spot, and scan along a preset path. During the scanning process, the shape of the deformed light spot changes The position data changes to form a preset controllable deformable light spot.
  • the light intensity distribution of the deformed spot during the scanning process also changes with the position data.
  • step S3 specifically includes:
  • Steps S31 to S35 are repeated until the direct write lithography ends.
  • the step of scanning along a preset path specifically includes controlling the deformed light spot to scan along a plurality of preset paths in a sequential order; the plurality of preset paths are discontinuous or continuous from end to end, so The several paths are parallel or intersect.
  • the projection optical device uses a parallel imaging mode for the projection of the deformed light spot.
  • step S3 the following steps may be further included:
  • the preset parameters of the direct-write lithography system include a photoresist exposure sensitivity curve.
  • the present invention provides a direct-write lithography system and a direct-write lithography method, which adopts a deformed light spot whose shape and/or light intensity distribution constantly changes during a drag scan process to expose the surface of a photolithography element, so that the surface of the photolithography element is exposed.
  • Each evaluation point is exposed to variable doses to realize maskless grayscale lithography of complex surface three-dimensional topography and structure, and to improve lithography accuracy and lithography efficiency.
  • FIG. 1 is a schematic diagram of the shape change of the deformed spot in the drag scanning process and the lithography groove type of the lithography element in the direct writing lithography system of the present invention.
  • Fig. 2a is a schematic diagram of the shape of the deformed light spot at a certain moment in the direct writing lithography system of the present invention.
  • 2b is a schematic cross-sectional view of the deformed light spot scanning the surface of the photolithography element at a certain moment in the direct writing lithography method of the present invention.
  • FIG. 3 is a schematic diagram of the framework of the direct writing lithography system according to the first embodiment of the present invention.
  • FIG. 4 is a flow chart of the steps of the direct write lithography method according to the first embodiment of the present invention.
  • FIG. 5 is a flowchart of specific steps of step S3 in the direct write lithography method shown in FIG. 4.
  • 6a to 6c are schematic diagrams of various preset paths in the direct-write lithography method according to the first embodiment of the present invention.
  • the present invention provides a direct-write lithography system and a direct-write lithography method.
  • a deformed light spot 10 whose shape and/or light intensity distribution changes continuously during a drag scanning process is used to expose the surface of a photolithography element 20, so that the photolithography element
  • Each evaluation point on 20 is exposed to variable dose to achieve maskless grayscale lithography of complex surface three-dimensional topography structure.
  • FIG. 1 shows a schematic diagram of the shape change of the deformed spot 10 of the present invention during the drag scanning process and the lithography groove type of the photolithography element 20.
  • the deformed spot 10 is refreshed at intervals, and the refresh is controlled by the central controller 35, such as refreshing at a fixed time interval at a frame rate, or refreshing at a non-equal time interval according to the requirements of the three-dimensional shape.
  • the central controller 35 such as refreshing at a fixed time interval at a frame rate, or refreshing at a non-equal time interval according to the requirements of the three-dimensional shape.
  • the shape of the deformed light spot 10 changes.
  • the interior of the deformed light spot 10 is gray-scale distribution light intensity.
  • the shape and/or light intensity distribution of the deformed light spot 10 changes.
  • Figure 2a shows a schematic diagram of the shape of the deformed spot 10 at a certain moment.
  • the projection area generated by the direct-write optical head of the projection optical device 37 includes a bright area 101 and a light-shielding area 102.
  • the area 101 is the inside of the deformed light spot 10.
  • FIG. 2b shows a schematic cross-sectional view of the deformed spot 10 scanning the surface of the photolithography 20 at a certain moment. For any evaluation point Q on the surface of the photolithography 20, the deformed light spot 10 scans the evaluation point Q along a certain scanning path and a certain scanning speed.
  • the direct writing lithography method of the present invention controls the front end 11 and the tail end 12 of the deformed light spot 10
  • the exposure time and/or light intensity distribution across the evaluation point Q, the exposure time and light intensity distribution affect the exposure amount at the evaluation point Q, and the etching depth of multiple evaluation points nearby defines the lithography 20 at this position Lithography groove type.
  • the points on the inner line A-A' sequentially scan through the evaluation point Q, and the exposure at the evaluation point Q is affected by the sum of the light intensity of each point on the line A-A'
  • the scanning speed is affected; when the deformed spot 10 scans along another path, the points on the inner line B-B' scan through the evaluation point Q in turn, and the exposure at the evaluation point Q is affected by the points on the line B-B'
  • the influence of light intensity and scanning speed is affected by the points on the line B-B' The influence of light intensity and scanning speed.
  • a series of calculations can be calculated and designed.
  • the shape and/or light intensity of the light spot has a corresponding relationship with the (x, y) coordinates passed by the scanning path.
  • the series of specific two-dimensional light spot shapes and/or the corresponding relationship between light intensity and position data constitute a light spot pattern file sequence.
  • the direct writing lithography system of the present invention generates a deformed light spot 10 whose shape and/or light intensity distribution continuously changes during the drag scanning process according to the light spot pattern file sequence.
  • the direct writing lithography system of this embodiment includes: a three-dimensional profile generating device 31, a three-dimensional profile analyzing device 32, a direct writing light source 33, a movement mechanism 34, a central controller 35, a spot pattern input device 36, and Projection optics 37.
  • the three-dimensional shape generating device 31, the three-dimensional shape analyzing device 32 and the central controller 35 can be set in one or more computers or servers.
  • the three-dimensional topography generating device 31 is used for generating three-dimensional topography data.
  • the three-dimensional topography data includes, but is not limited to, the x, y lateral coordinates of each point of the three-dimensional topography and the corresponding z-direction height data.
  • the three-dimensional topography data is generated by a three-dimensional modeling software, which can be exported for computer analysis
  • a general three-dimensional data format such as STL, 3DS, STP, IGS, OBJ, etc., and preferably a vector file.
  • the three-dimensional shape analysis device 32 is used for generating a spot pattern file sequence according to the three-dimensional shape data and preset parameters of the direct writing lithography system.
  • the spot pattern file sequence includes a coordinate sequence and a spot image data sequence corresponding to the coordinate sequence.
  • a fixed light intensity is used inside the deformed light spot 10
  • each light spot image data in the light spot image data sequence includes a light spot shape
  • the way of defining the light spot shape in the light spot image data is multiple coordinates describing the outline of the light spot, or The binary light intensity data of each point in the projected area generated by the direct-write optical head.
  • the preset parameters of the direct write lithography system include the preset path P, the scanning speed, and the fixed light intensity, and are not limited thereto.
  • the light spot pattern file sequence is sequentially stored in the memory after being generated, and the central controller 35 can perform operations such as reading and matching the light spot pattern file sequence in the memory.
  • the direct writing light source 33 is used to provide the starting light beam to the spot pattern input device 36.
  • the direct-write light source 33 may be an LED, semiconductor laser, solid-state laser, gas laser, etc. that photosensitize the lithographic material on the lithography element 20, and is preferably an incoherent continuous light source.
  • the movement mechanism 34 is used to control the projection optical device 37 to scan along the preset path P relative to the photolithography 20 to be exposed, and is used to send position data. It should be noted that the scanning, movement or displacement referred to in the present invention refers to the relative displacement of the projection optical device 37 and the photolithography element 20.
  • the movement mechanism 34 includes a first stepping shaft and a first driving motor that drive the projection optical device 37 to move in the horizontal direction, and a second stepping shaft and a second drive motor that drive the projection optical device 37 to move up and down; or,
  • the movement mechanism 34 includes a first stepping shaft and a first drive motor that drive the stage carrying the photolithography 20 to move in the horizontal direction, and a second stepping shaft and a second drive motor that drive the stage to move up and down;
  • a combination of two exercise modes can be used.
  • the movement of the projection optical device 37 or the stage in the horizontal direction adopts a rectangular coordinate system or a polar coordinate system.
  • the movement mechanism 34 obtains position data by means of laser or ultrasound.
  • the position data includes but is not limited to: the coordinates of the reference point in the deformed spot 10, the coordinates of the reference point on the projection optical device 37, and the reference point of the movement mechanism 34. Coordinates etc.
  • the central controller 35 reads the corresponding spot image data in the spot pattern file sequence according to the position data, and uploads the spot image data to the spot pattern input device 36. Specifically, the central controller 35 matches the stored spot pattern file sequence with the position data, reads the spot shape corresponding to the position data, and controls the spot pattern input device 36 to generate and refresh the corresponding pattern light. Further, the central controller 35 is also used to transmit a displacement instruction to the motion mechanism 34, so that the projection optical device 37 moves in a three-dimensional direction relative to the photolithography 20, so as to realize the displacement and focus of the projection optical device 37.
  • the spot pattern input device 36 is used to modulate the initial light beam provided by the direct writing light source 33 to generate pattern light according to the spot image data, and input the pattern light into the projection optical device 37.
  • the spot pattern input device 36 adopts a spatial light modulator with a two-dimensional array structure, such as a digital micromirror array (DMD), a liquid crystal on silicon (LCOS), and the like.
  • DMD digital micromirror array
  • LCOS liquid crystal on silicon
  • the projection optical device 37 is used to control the pattern light to project a dynamically deformed structure spot on the surface of the photolithography member 20, and scan along a preset path P driven by the movement mechanism 34.
  • the projection optical device 37 also adjusts the focus with the assistance of the central controller 35 and the movement mechanism 34, and controls the projection area of the deformed light spot 10 of a certain shape on the surface of the photolithography 20 through the focus adjustment.
  • the position data of the reference point is continuously uploaded to the central controller 35, and the shape of the graphic light is refreshed accordingly. Therefore, the shape of the deformed spot 10 changes with the position data to form a preset controllable deformed spot.
  • the deformed spot 10 maintains the shape after the nth refresh, so the scanning method of the projection optical device 37 is drag and step scan.
  • the projection optical device 37 uses a parallel imaging method for the projection of the deformed light spot 10, such as a flat-field miniature imaging projection optical method instead of a serial imaging method such as an acousto-optic modulation optical method and a galvanometer optical method.
  • the direct writing lithography system may further include a beam shaper that shapes the initial light beam emitted by the direct writing light source 33, and the beam shaper is located between the direct writing light source 33 and the spot pattern input device 36.
  • this embodiment also provides a direct write lithography method, which includes the following steps:
  • the spot pattern file sequence includes a coordinate sequence and a spot image data sequence corresponding to the coordinate sequence;
  • S3 Generate pattern light according to the spot image data sequence, project the pattern light onto the surface of the photolithography 20 to be exposed to form a deformed spot 10, and scan along the preset path P.
  • the shape of the deformed spot 10 varies with the position data And change, forming a preset controllable deformable light spot.
  • step S3 includes:
  • Steps S31 to S35 are repeated until the direct write lithography ends.
  • step S3 the step of scanning along the preset path P specifically includes controlling the deformed light spot 10 to scan along a number of preset paths P in a sequential order.
  • the preset paths P are discontinuous or continuous at the beginning and end, and among the plurality of paths Parallel or cross.
  • FIGS. 6a to 6c show three special examples of the scanning path.
  • the deformed spot 10 scans along a continuous preset path P, and the scanning area of the direct-write optical head of the projection optical device 37 forms a continuous strip.
  • the graphics 13 are spliced without overlap to form a format pattern; in Figure 6b, the deformed spot 10 scans along an intermittent preset path P, the scanning area of the direct-write optical head forms a plurality of striped patterns 13, and the plurality of preset paths P are parallel and The strip pattern 13 has an overlapping area 14 to form a format pattern; in Figure 6c, the deformed spot 10 scans along a preset path P, and the preset path P has an intersection.
  • the scanning area of the direct write optical head forms multiple strip patterns 13 and has Overlapping and splicing to form a format graphic.
  • step S3 the following steps may be included:
  • a corresponding thickness of photoresist 22 is coated on the surface of the substrate 21;
  • the preset parameters of the direct-write lithography system include the photoresist 22 exposure sensitivity curve, which is the corresponding relationship between the exposure amount and the photoresist exposure sensitivity, and the photoresist exposure sensitivity refers to the photoresist exposure sensitivity curve.
  • the preset parameters of the direct-write lithography system also include the thickness of the photoresist 22, the contrast of the photoresist 22, etc.
  • the contrast of the photoresist 22 refers to the steep transition of the photoresist 22 from the exposed area to the non-exposed area. degree.
  • step S3 it can also include the steps of: performing chemical treatments such as development on the photoresist 20, and removing part of the photoresist 22 in gray scale.
  • the removal depth of the photoresist 22 is related to the exposure of each point on the surface, so that Obtain the three-dimensional micro-nano structure graphic master with the expected three-dimensional morphology.
  • it may further include the steps of performing ion etching, duplication, electroplating and the like on the basis of the three-dimensional micro-nano structure pattern master.
  • This embodiment provides a direct-write lithography system and a direct-write lithography method.
  • the difference between the direct-write lithography method of this embodiment and the above-mentioned first embodiment is as follows:
  • the inside of the deformed light spot 10 is gray-scale distribution light intensity
  • the light spot image data includes the light spot shape and the light intensity distribution in the light spot.
  • the preset parameters of the direct-write lithography system include the preset path P and the scanning speed, and the preset parameters may further include the exposure sensitivity curve, thickness, contrast, etc. of the photoresist 22.
  • a spot pattern file sequence is generated according to the three-dimensional shape data, the preset path P, and the scanning speed.
  • the spot pattern file sequence includes a coordinate sequence, a spot image data sequence corresponding to the coordinate sequence, and a light spot corresponding to the coordinate sequence. Strongly distributed sequence.
  • step S3 the light intensity distribution of the deformed spot 10 also changes with the position data during the scanning process.
  • step S32 the step of reading the corresponding spot image data in the spot pattern file sequence according to the position data specifically includes reading the corresponding spot shape and light intensity distribution in the spot in the spot pattern file sequence according to the position data.
  • the deformed spot 10 of the nth (n is a positive integer) refresh and the deformed spot 10 of the n+1th refresh may have the same shape and different light intensity distributions, or may have different shapes and different lights. Strong distribution.
  • the present invention provides a direct-write lithography system and a direct-write lithography method.
  • the deformed light spot 10 whose shape and/or light intensity distribution is constantly changing during the drag scan process is used to perform the process on the surface of the photolithography element 20.
  • Exposure makes each evaluation point on the photolithography member 20 subject to variable dose exposure to achieve maskless grayscale lithography. Due to the high flexibility of the light spot pattern file sequence, it can achieve complex surface three-dimensional topography and structure without the need for high-level fabrication.
  • the precision halftone mask saves costs and improves the lithography accuracy and lithography efficiency.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
PCT/CN2020/126362 2019-12-17 2020-11-04 直写光刻***和直写光刻方法 WO2021120906A1 (zh)

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