CN112987501B - 直写光刻***和直写光刻方法 - Google Patents
直写光刻***和直写光刻方法 Download PDFInfo
- Publication number
- CN112987501B CN112987501B CN201911303595.7A CN201911303595A CN112987501B CN 112987501 B CN112987501 B CN 112987501B CN 201911303595 A CN201911303595 A CN 201911303595A CN 112987501 B CN112987501 B CN 112987501B
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- China
- Prior art keywords
- direct
- light
- light spot
- photoetching
- deformed
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911303595.7A CN112987501B (zh) | 2019-12-17 | 2019-12-17 | 直写光刻***和直写光刻方法 |
JP2022513961A JP7345769B2 (ja) | 2019-12-17 | 2020-11-04 | 直接描画露光システム及び直接描画露光方法 |
KR1020227021405A KR20220106166A (ko) | 2019-12-17 | 2020-11-04 | 직접 기록 포토에칭 시스템 및 직접 기록 포토에칭 방법 |
PCT/CN2020/126362 WO2021120906A1 (zh) | 2019-12-17 | 2020-11-04 | 直写光刻***和直写光刻方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911303595.7A CN112987501B (zh) | 2019-12-17 | 2019-12-17 | 直写光刻***和直写光刻方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112987501A CN112987501A (zh) | 2021-06-18 |
CN112987501B true CN112987501B (zh) | 2023-01-24 |
Family
ID=76342464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911303595.7A Active CN112987501B (zh) | 2019-12-17 | 2019-12-17 | 直写光刻***和直写光刻方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7345769B2 (ja) |
KR (1) | KR20220106166A (ja) |
CN (1) | CN112987501B (ja) |
WO (1) | WO2021120906A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113934115B (zh) * | 2021-10-22 | 2023-10-27 | 合肥芯碁微电子装备股份有限公司 | 控制直写式光刻机的方法和直写式光刻机 |
CN114114848B (zh) * | 2021-10-26 | 2023-12-15 | 江苏迪盛智能科技有限公司 | 扫描光刻的控制方法、装置、设备及存储介质 |
CN115629480A (zh) * | 2022-08-18 | 2023-01-20 | 西北大学 | 一种基于矢量图结构和光场调制的激光刻印***与方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19626176A1 (de) * | 1996-06-29 | 1998-01-08 | Deutsche Forsch Luft Raumfahrt | Lithographie-Belichtungseinrichtung und Lithographie-Verfahren |
JP3704994B2 (ja) * | 1999-02-23 | 2005-10-12 | ノーリツ鋼機株式会社 | 焼付装置の光量調整方法 |
TW478032B (en) * | 1999-11-04 | 2002-03-01 | Seiko Epson Corp | Method and device for laser plotting, hologram master and the manufacturing method thereof |
US6730256B1 (en) * | 2000-08-04 | 2004-05-04 | Massachusetts Institute Of Technology | Stereolithographic patterning with interlayer surface modifications |
CN100561356C (zh) * | 2007-05-23 | 2009-11-18 | 芯硕半导体(合肥)有限公司 | 综合式直写光刻方法 |
EP2017833A1 (en) * | 2007-07-16 | 2009-01-21 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Scanned writing of an exposure pattern on a substrate |
CN101339300B (zh) * | 2008-08-13 | 2010-08-25 | 哈尔滨工业大学 | 双光束干涉可调增益激光写入滤波方法与装置 |
US8465910B2 (en) * | 2010-07-06 | 2013-06-18 | Massachusetts Institute Of Technology | Hybrid lithographic method for fabricating complex multidimensional structures |
CN102357735B (zh) * | 2011-09-22 | 2015-05-13 | 中国航天科技集团公司第五研究院第五一0研究所 | 基于可控光束剖面形状与功率分布的双扫描三维激光刻蚀加工方法 |
CN102837128B (zh) * | 2012-08-28 | 2015-09-23 | 中国科学院光电研究院 | 采用液晶光阀整形的激光直写加工*** |
CN103744271B (zh) * | 2014-01-28 | 2015-10-28 | 苏州苏大维格光电科技股份有限公司 | 一种激光直写***与光刻方法 |
JP6030597B2 (ja) * | 2014-04-04 | 2016-11-24 | 株式会社松浦機械製作所 | 三次元造形装置及び三次元形状造形物の製造方法 |
EP3978184A1 (en) * | 2015-11-23 | 2022-04-06 | NLIGHT, Inc. | Method and apparatus for fine-scale temporal control for laser beam material processing |
CN105480939A (zh) * | 2015-12-03 | 2016-04-13 | 中国科学院物理研究所 | 一种具有液体全超憎功能的三维结构的制备方法 |
CN105700302A (zh) * | 2016-03-18 | 2016-06-22 | 天津中精微仪器设备有限公司 | 一种快速光刻*** |
-
2019
- 2019-12-17 CN CN201911303595.7A patent/CN112987501B/zh active Active
-
2020
- 2020-11-04 JP JP2022513961A patent/JP7345769B2/ja active Active
- 2020-11-04 KR KR1020227021405A patent/KR20220106166A/ko not_active Application Discontinuation
- 2020-11-04 WO PCT/CN2020/126362 patent/WO2021120906A1/zh active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN112987501A (zh) | 2021-06-18 |
JP7345769B2 (ja) | 2023-09-19 |
WO2021120906A1 (zh) | 2021-06-24 |
JP2022547841A (ja) | 2022-11-16 |
KR20220106166A (ko) | 2022-07-28 |
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