KR20220106166A - 직접 기록 포토에칭 시스템 및 직접 기록 포토에칭 방법 - Google Patents

직접 기록 포토에칭 시스템 및 직접 기록 포토에칭 방법 Download PDF

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Publication number
KR20220106166A
KR20220106166A KR1020227021405A KR20227021405A KR20220106166A KR 20220106166 A KR20220106166 A KR 20220106166A KR 1020227021405 A KR1020227021405 A KR 1020227021405A KR 20227021405 A KR20227021405 A KR 20227021405A KR 20220106166 A KR20220106166 A KR 20220106166A
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KR
South Korea
Prior art keywords
spot
photoetching
image data
direct
preset
Prior art date
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KR1020227021405A
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English (en)
Korean (ko)
Inventor
동린 푸
펑페이 주
밍 주
른진 샤오
진 장
관난 왕
린센 첸
Original Assignee
에스브이지 테크 그룹 컴퍼니 리미티드
수저우 유니버시티
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 에스브이지 테크 그룹 컴퍼니 리미티드, 수저우 유니버시티 filed Critical 에스브이지 테크 그룹 컴퍼니 리미티드
Publication of KR20220106166A publication Critical patent/KR20220106166A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020227021405A 2019-12-17 2020-11-04 직접 기록 포토에칭 시스템 및 직접 기록 포토에칭 방법 KR20220106166A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201911303595.7A CN112987501B (zh) 2019-12-17 2019-12-17 直写光刻***和直写光刻方法
CN201911303595.7 2019-12-17
PCT/CN2020/126362 WO2021120906A1 (zh) 2019-12-17 2020-11-04 直写光刻***和直写光刻方法

Publications (1)

Publication Number Publication Date
KR20220106166A true KR20220106166A (ko) 2022-07-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227021405A KR20220106166A (ko) 2019-12-17 2020-11-04 직접 기록 포토에칭 시스템 및 직접 기록 포토에칭 방법

Country Status (4)

Country Link
JP (1) JP7345769B2 (ja)
KR (1) KR20220106166A (ja)
CN (1) CN112987501B (ja)
WO (1) WO2021120906A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113934115B (zh) * 2021-10-22 2023-10-27 合肥芯碁微电子装备股份有限公司 控制直写式光刻机的方法和直写式光刻机
CN114114848B (zh) * 2021-10-26 2023-12-15 江苏迪盛智能科技有限公司 扫描光刻的控制方法、装置、设备及存储介质
CN115629480A (zh) * 2022-08-18 2023-01-20 西北大学 一种基于矢量图结构和光场调制的激光刻印***与方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19626176A1 (de) * 1996-06-29 1998-01-08 Deutsche Forsch Luft Raumfahrt Lithographie-Belichtungseinrichtung und Lithographie-Verfahren
JP3704994B2 (ja) * 1999-02-23 2005-10-12 ノーリツ鋼機株式会社 焼付装置の光量調整方法
TW478032B (en) * 1999-11-04 2002-03-01 Seiko Epson Corp Method and device for laser plotting, hologram master and the manufacturing method thereof
US6730256B1 (en) * 2000-08-04 2004-05-04 Massachusetts Institute Of Technology Stereolithographic patterning with interlayer surface modifications
CN100561356C (zh) * 2007-05-23 2009-11-18 芯硕半导体（合肥）有限公司 综合式直写光刻方法
EP2017833A1 (en) * 2007-07-16 2009-01-21 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Scanned writing of an exposure pattern on a substrate
CN101339300B (zh) * 2008-08-13 2010-08-25 哈尔滨工业大学 双光束干涉可调增益激光写入滤波方法与装置
US8465910B2 (en) * 2010-07-06 2013-06-18 Massachusetts Institute Of Technology Hybrid lithographic method for fabricating complex multidimensional structures
CN102357735B (zh) * 2011-09-22 2015-05-13 中国航天科技集团公司第五研究院第五一0研究所 基于可控光束剖面形状与功率分布的双扫描三维激光刻蚀加工方法
CN102837128B (zh) * 2012-08-28 2015-09-23 中国科学院光电研究院 采用液晶光阀整形的激光直写加工***
CN103744271B (zh) * 2014-01-28 2015-10-28 苏州苏大维格光电科技股份有限公司 一种激光直写***与光刻方法
JP6030597B2 (ja) * 2014-04-04 2016-11-24 株式会社松浦機械製作所 三次元造形装置及び三次元形状造形物の製造方法
EP3978184A1 (en) * 2015-11-23 2022-04-06 NLIGHT, Inc. Method and apparatus for fine-scale temporal control for laser beam material processing
CN105480939A (zh) * 2015-12-03 2016-04-13 中国科学院物理研究所 一种具有液体全超憎功能的三维结构的制备方法
CN105700302A (zh) * 2016-03-18 2016-06-22 天津中精微仪器设备有限公司 一种快速光刻***

Also Published As

Publication number Publication date
CN112987501A (zh) 2021-06-18
JP7345769B2 (ja) 2023-09-19
CN112987501B (zh) 2023-01-24
WO2021120906A1 (zh) 2021-06-24
JP2022547841A (ja) 2022-11-16

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