WO2021077804A1 - 边皮料的切割方法 - Google Patents

边皮料的切割方法 Download PDF

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Publication number
WO2021077804A1
WO2021077804A1 PCT/CN2020/100649 CN2020100649W WO2021077804A1 WO 2021077804 A1 WO2021077804 A1 WO 2021077804A1 CN 2020100649 W CN2020100649 W CN 2020100649W WO 2021077804 A1 WO2021077804 A1 WO 2021077804A1
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Prior art keywords
edge leather
arc
cut
silicon block
cutting
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PCT/CN2020/100649
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English (en)
French (fr)
Inventor
孟祥熙
曹育红
符黎明
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常州时创能源股份有限公司
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Publication of WO2021077804A1 publication Critical patent/WO2021077804A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools

Definitions

  • the invention relates to a method for cutting edge leather.
  • Monocrystalline silicon wafers are cut from monocrystalline silicon rods.
  • the monocrystalline silicon rods are cut into squares to obtain a rectangular parallelepiped silicon block whose length direction is consistent with the length of the silicon rod, and then the silicon block is sliced into monocrystalline silicon wafers.
  • edge leather The cutting of single crystal silicon rods will produce edge leather, and the edge leather is generally used for reheating or as a seed crystal for high-efficiency polycrystalline ingots, resulting in low utilization of single crystal silicon rods.
  • Cutting the edge leather into silicon wafers can improve the utilization rate of monocrystalline silicon rods.
  • the edge leather generally includes: a rectangular bottom surface, a curved surface opposite to the bottom surface, and a pair of end surfaces located at both ends of the length direction of the bottom surface; the junction of the bottom surface and the curved surface is the sharp corner; the curved surface is located on the two sides of the edge leather.
  • the part between the side sharp corners is an arc-shaped protrusion.
  • the sharp corners on both sides are generally cut along the length direction of the side leather material, and the arc-shaped protrusions are cut off along the length direction of the side leather material.
  • the diamond wire is relatively displaced with the edge leather in the length direction of the edge leather. The contact time between the diamond wire and the edge leather (ie cutting time) is longer, and the cutting efficiency of sharp corners and arc-shaped protrusions needs to be improved.
  • the purpose of the present invention is to provide a method for cutting edge leather, which can improve the cutting efficiency of sharp corners and arc-shaped protrusions.
  • the present invention provides a method for cutting edge leather.
  • the edge leather is an edge leather produced by cutting a single crystal silicon rod.
  • the edge leather includes a rectangular bottom surface and a curved surface opposite to the bottom surface. , And a pair of end faces at both ends in the length direction of the bottom surface; the junction between the bottom surface and the arc is the sharp corner; the arc between the sharp corners on both sides of the edge leather is the arc protrusion;
  • the cutting method includes: cutting off the sharp corners on both sides and cutting off the arc-shaped protrusions; cutting off the sharp corners on both sides along the thickness direction of the edge leather, and cutting the arc-shaped protrusions along the width direction of the bottom surface of the edge leather.
  • the invention cuts the sharp corners on both sides along the thickness direction of the edge leather, and cuts off the arc-shaped protrusions along the width direction of the bottom surface of the edge leather, which can reduce the cutting time of the sharp corners and the arc-shaped protrusions, and improve the sharpness of the sharp corners. Cutting efficiency of arc-shaped protrusions.
  • the present invention also provides a specific solution of the above-mentioned edge leather cutting method, which includes the following specific steps:
  • A3) Slicing of silicon block slice the silicon block in a direction parallel to the bottom surface of the silicon block to obtain a single crystal silicon wafer.
  • the invention provides a scheme of first cutting, then cutting off the sharp corners and arc-shaped protrusions, and finally slicing.
  • the scheme can cut the edge leather into monocrystalline silicon wafers and can improve the utilization rate of monocrystalline silicon rods.
  • step A3) the silicon block is sliced along the width direction of the bottom surface of the silicon block to obtain a single crystal silicon wafer.
  • the silicon block In order to cut the silicon block into monocrystalline silicon wafers, the silicon block is generally sliced along the length of the bottom surface of the silicon block.
  • the slicing time is relatively long, and the slicing efficiency needs to be improved.
  • the invention slices the silicon block along the width direction of the bottom surface of the silicon block, which can reduce the slicing time of the silicon block and improve the slicing efficiency of the silicon block.
  • step A1 a band saw cutting machine or a diamond wire cutting machine is used to cut the edge leather.
  • a band saw cutting machine or a diamond wire cutting machine is used to cut the sharp corners and arc-shaped protrusions on both sides of the small section of the edge leather.
  • a slicer is used to slice the silicon block.
  • the length of the bottom surface of the edge leather small section is 100-250 mm.
  • the present invention also provides another specific solution of the above-mentioned edge leather cutting method, which includes the following specific steps:
  • the invention also provides a scheme of first cutting off the sharp corners and arc-shaped protrusions, then cutting, and finally slicing.
  • the scheme can also cut the edge leather into monocrystalline silicon wafers, and can also improve the utilization rate of monocrystalline silicon rods.
  • step B3 the small silicon block is sliced along the width direction of the bottom surface of the small silicon block to obtain a single crystal silicon wafer.
  • the silicon block In order to cut the silicon block into a single crystal silicon wafer, the silicon block is generally sliced along the length of the bottom surface of the silicon block. The slicing time is longer, and the slicing efficiency needs to be improved.
  • the invention slices the small silicon block along the width direction of the bottom surface of the small silicon block, which can reduce the slicing time of the small silicon block and improve the slicing efficiency of the small silicon block.
  • step B1 a band saw cutting machine or a diamond wire cutting machine is used to cut the sharp corners and arc-shaped protrusions on both sides of the edge leather.
  • step B2 a band saw cutting machine or a diamond wire cutting machine is used to cut the silicon block.
  • a slicer is used to slice the silicon block into small sections.
  • the length of the bottom surface of the silicon block is 100-250 mm.
  • the advantages and beneficial effects of the present invention are: to provide a method for cutting edge leather, which can reduce the cutting time of the sharp corners and the arc-shaped protrusions, and improve the cutting efficiency of the sharp corners and the arc-shaped protrusions; It can reduce the slicing time and improve the slicing efficiency.
  • Figure 1 is a schematic diagram of edge leather
  • Figure 2 is a schematic diagram of cutting off the sharp corners on both sides along the thickness direction of the edge leather
  • Figure 3 is a schematic diagram of cutting out the arc-shaped protrusion along the width direction of the bottom surface of the edge leather
  • Figure 4 is a schematic diagram of the edge leather in Example 1;
  • Figure 5 is a schematic diagram of a small section of the edge leather in Example 1;
  • Fig. 6 is a schematic diagram of the silicon block in embodiment 1;
  • Figure 7 is a schematic diagram of the edge leather in Example 2.
  • Fig. 8 is a schematic diagram of the silicon block in embodiment 2;
  • FIG. 9 is a schematic diagram of a small section of the silicon block in Example 2.
  • the edge leather material 1 to be cut in the present invention is the edge leather material produced by cutting a single crystal silicon rod;
  • the edge leather material 1 includes: a rectangular bottom surface 11, an arc surface 12 opposite to the bottom surface 11, and a separate set A pair of end surfaces at both ends of the length direction of the bottom surface 11; the pair of end surfaces are perpendicular to the bottom surface 11; the joint part of the bottom surface 11 and the arc surface 12 is the sharp corner 2; the arc surface 12 is located on both sides of the edge leather 1 sharp corner 2
  • the part in between is the arc-shaped protrusion 3.
  • the present invention provides a method for cutting edge leather.
  • the sharp corners on both sides are cut along the thickness direction of the edge leather; and the arc-shaped protrusions are cut along the width direction of the bottom surface of the edge leather.
  • the invention cuts the sharp corners on both sides along the thickness direction of the edge leather, and cuts off the arc-shaped protrusions along the width direction of the bottom surface of the edge leather, which can reduce the cutting time of the sharp corners and the arc-shaped protrusions, and improve the sharpness of the sharp corners. Cutting efficiency of arc-shaped protrusions.
  • the present invention provides a specific solution of the above-mentioned edge leather cutting method, which includes the following specific steps:
  • A3) Slicing of silicon block slice the silicon block in a direction parallel to the bottom surface of the silicon block to obtain a single crystal silicon wafer.
  • the invention provides a scheme of first cutting, then cutting off the sharp corners and arc-shaped protrusions, and finally slicing.
  • the scheme can cut the edge leather into monocrystalline silicon wafers and can improve the utilization rate of monocrystalline silicon rods.
  • the cutting time of the part can improve the cutting efficiency of sharp corners and arc-shaped protrusions.
  • step A3) the silicon block is sliced along the width direction of the bottom surface of the silicon block to obtain a single crystal silicon wafer.
  • the silicon block In order to cut the silicon block into monocrystalline silicon wafers, the silicon block is generally sliced along the length of the bottom surface of the silicon block.
  • the slicing time is relatively long, and the slicing efficiency needs to be improved.
  • the invention slices the silicon block along the width direction of the bottom surface of the silicon block, which can reduce the slicing time of the silicon block and improve the slicing efficiency of the silicon block.
  • step A1 a band saw cutting machine or a diamond wire cutting machine is used to cut the edge leather.
  • a band saw cutting machine or a diamond wire cutting machine is used to cut the sharp corners and arc-shaped protrusions on both sides of the small section of the edge leather.
  • a slicer is used to slice the silicon block.
  • the length of the bottom surface of the edge leather small section is 100-250 mm.
  • the present invention also provides another specific solution of the above-mentioned edge leather cutting method, which includes the following specific steps:
  • the invention also provides a scheme of first cutting off the sharp corners and arc-shaped protrusions, then cutting, and finally slicing.
  • the scheme can also cut the edge leather into monocrystalline silicon wafers, and can also improve the utilization rate of monocrystalline silicon rods.
  • step B3 the small silicon block is sliced along the width direction of the bottom surface of the small silicon block to obtain a single crystal silicon wafer.
  • the silicon block In order to cut the silicon block into a single crystal silicon wafer, the silicon block is generally sliced along the length of the bottom surface of the silicon block. The slicing time is longer, and the slicing efficiency needs to be improved.
  • the invention slices the small silicon block along the width direction of the bottom surface of the small silicon block, which can reduce the slicing time of the small silicon block and improve the slicing efficiency of the small silicon block.
  • step B1 a band saw cutting machine or a diamond wire cutting machine is used to cut the sharp corners and arc-shaped protrusions on both sides of the edge leather.
  • step B2 a band saw cutting machine or a diamond wire cutting machine is used to cut the silicon block.
  • a slicer is used to slice the silicon block into small sections.
  • the length of the bottom surface of the silicon block is 100-250 mm.
  • the present invention can reduce the cutting time of the sharp corners and arc-shaped protrusions, and improve the cutting efficiency of the sharp corners and arc-shaped protrusions; the present invention can also reduce the slicing time and improve the slicing efficiency.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

一种边皮料的切割方法，所述边皮料（1）为单晶硅棒切方产生的边皮料（1）；边皮料（1）包括：长方形底面（11），与底面（11）相背的弧面（12），以及分设于底面（11）长度方向两端的一对端面；以底面（11）和弧面（12）的结合部为尖角部（2）；以弧面（12）位于边皮料（1）两侧尖角部（2）之间的部分为弧形凸起部（3）；所述切割方法包括：切除两侧尖角部（2）以及切除弧形凸起部（3）；沿边皮料（1）的厚度方向切除两侧尖角部（2），且沿边皮料（1）底面（11）的宽度方向切除弧形凸起部（3）；该切割方法能减少尖角部（2）和弧形凸起部（3）的切割时间，提高尖角部（2）和弧形凸起部（3）的切割效率；还能减少切片时间，提高切片效率。

Description

边皮料的切割方法 技术领域
本发明涉及边皮料的切割方法。
 背景技术
单晶硅片由单晶硅棒切割而成，一般先将单晶硅棒进行切方，得到长度方向与硅棒长度方向一致的长方体状硅块，再将硅块切片成单晶硅片。
单晶硅棒切方会产生边皮料，而边皮料一般都是回炉或用作高效多晶铸锭籽晶等使用，造成单晶硅棒的利用率较低。
将边皮料切割成硅片，可以提高单晶硅棒的利用率。
边皮料一般包括：长方形底面，与底面相背的弧面，以及分设于底面长度方向两端的一对端面；以底面和弧面的结合部为尖角部；以弧面位于边皮料两侧尖角部之间的部分为弧形凸起部。
将边皮料切割成硅片，需要采用金刚线切除两侧尖角部以及切除弧形凸起部。目前一般沿边皮料的长度方向切除两侧尖角部，并沿边皮料的长度方向切除弧形凸起部。金刚线在边皮料长度方向上与边皮料相对位移，金刚线与边皮料的接触时间（即切割时间）较长，尖角部和弧形凸起部的切割效率有待提高。
 技术解决方案
本发明的目的在于提供一种边皮料的切割方法，其能提高尖角部和弧形凸起部的切割效率。
为实现上述目的，本发明提供一种边皮料的切割方法，所述边皮料为单晶硅棒切方产生的边皮料；边皮料包括：长方形底面，与底面相背的弧面，以及分设于底面长度方向两端的一对端面；以底面和弧面的结合部为尖角部；以弧面位于边皮料两侧尖角部之间的部分为弧形凸起部；所述切割方法包括：切除两侧尖角部以及切除弧形凸起部；沿边皮料的厚度方向切除两侧尖角部，且沿边皮料底面的宽度方向切除弧形凸起部。
本发明沿边皮料的厚度方向切除两侧尖角部，并沿边皮料底面的宽度方向切除弧形凸起部，可以减少尖角部和弧形凸起部的切割时间，提高尖角部和弧形凸起部的切割效率。
本发明还提供上述边皮料切割方法的一种具体方案，包括如下具体步骤：
A1）截断边皮料：对边皮料进行截断，得到边皮料小段；
A2）切除边皮料小段的两侧尖角部和弧形凸起部：沿边皮料小段的厚度方向切除边皮料小段的两侧尖角部，且沿边皮料小段底面的宽度方向切除边皮料小段的弧形凸起部，得到长方体状硅块；
A3）硅块切片：沿平行于硅块底面的方向对硅块进行切片，得到单晶硅片。
本发明提供先截断，再切除尖角部和弧形凸起部，最后切片的方案，该方案可将边皮料切割成单晶硅片，可提高单晶硅棒的利用率。
优选的，步骤A3）中，沿硅块底面的宽度方向对硅块进行切片，得到单晶硅片。
为了将硅块切割出单晶硅片，目前一般沿硅块底面的长度方向对硅块进行切片，切片时间较长，切片效率有待提高。
本发明沿硅块底面的宽度方向对硅块进行切片，可减少硅块的切片时间，提高硅块的切片效率。
优选的，步骤A1）中，采用带锯截断机或金刚线截断机来截断边皮料。
优选的，步骤A2）中，采用带锯截断机或金刚线截断机切除边皮料小段的两侧尖角部和弧形凸起部。
优选的，步骤A3）中，采用切片机进行硅块切片。
优选的，步骤A1）中，边皮料小段底面的长度为100～250mm。
本发明还提供上述边皮料切割方法的另一种具体方案，包括如下具体步骤：
B1）切除边皮料的两侧尖角部和弧形凸起部：沿边皮料的厚度方向切除边皮料的两侧尖角部，且沿边皮料底面的宽度方向切除边皮料的弧形凸起部，得到长方体状硅块；
B2）截断硅块：对硅块进行截断，得到硅块小段；
B3）硅块小段切片：沿平行于硅块小段底面的方向对硅块小段进行切片，得到单晶硅片。
本发明还提供先切除尖角部和弧形凸起部，再截断，最后切片的方案，该方案也可将边皮料切割成单晶硅片，也可提高单晶硅棒的利用率。
优选的，步骤B3）中，沿硅块小段底面的宽度方向对硅块小段进行切片，得到单晶硅片。
为了将硅块小段切割出单晶硅片，目前一般沿硅块小段底面的长度方向对硅块小段进行切片，切片时间较长，切片效率有待提高。
本发明沿硅块小段底面的宽度方向对硅块小段进行切片，可减少硅块小段的切片时间，提高硅块小段的切片效率。
优选的，步骤B1）中，采用带锯截断机或金刚线截断机切除边皮料的两侧尖角部和弧形凸起部。
优选的，步骤B2）中，采用带锯截断机或金刚线截断机来截断硅块。
优选的，步骤B3）中，采用切片机进行硅块小段切片。
优选的，步骤B2）中，硅块小段底面的长度为100～250mm。
 有益效果
本发明的优点和有益效果在于：提供一种边皮料的切割方法，其能减少尖角部和弧形凸起部的切割时间，提高尖角部和弧形凸起部的切割效率；还能减少切片时间，提高切片效率。
 附图说明
图1是边皮料的示意图；
图2是沿边皮料的厚度方向切除两侧尖角部的示意图；
图3是沿边皮料底面的宽度方向切除弧形凸起部的示意图；
图4是实施例1中边皮料的示意图；
图5是实施例1中边皮料小段的示意图；
图6是实施例1中硅块的示意图；
图7是实施例2中边皮料的示意图；
图8是实施例2中硅块的示意图；
图9是实施例2中硅块小段的示意图。
 本发明的最佳实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
如图1所示，本发明要切割的边皮料1为单晶硅棒切方产生的边皮料；边皮料1包括：长方形底面11，与底面11相背的弧面12，以及分设于底面11长度方向两端的一对端面；该对端面与底面11垂直；以底面11和弧面12的结合部为尖角部2；以弧面12位于边皮料1两侧尖角部2之间的部分为弧形凸起部3。
如图2和图3所示，本发明提供一种边皮料的切割方法，沿边皮料的厚度方向切除两侧尖角部；且沿边皮料底面的宽度方向切除弧形凸起部。
本发明沿边皮料的厚度方向切除两侧尖角部，并沿边皮料底面的宽度方向切除弧形凸起部，可以减少尖角部和弧形凸起部的切割时间，提高尖角部和弧形凸起部的切割效率。
本发明的具体实施例如下：
实施例1
如图4至图6所示，本发明提供上述边皮料切割方法的一种具体方案，包括如下具体步骤：
A1）截断边皮料：对边皮料进行截断，得到边皮料小段；
A2）切除边皮料小段的两侧尖角部和弧形凸起部：沿边皮料小段的厚度方向切除边皮料小段的两侧尖角部，且沿边皮料小段底面的宽度方向切除边皮料小段的弧形凸起部，得到长方体状硅块；
A3）硅块切片：沿平行于硅块底面的方向对硅块进行切片，得到单晶硅片。
本发明提供先截断，再切除尖角部和弧形凸起部，最后切片的方案，该方案可将边皮料切割成单晶硅片，可提高单晶硅棒的利用率。
沿边皮料小段的厚度方向切除边皮料小段的两侧尖角部，并沿边皮料小段底面的宽度方向切除边皮料小段的弧形凸起部，可以减少尖角部和弧形凸起部的切割时间，提高尖角部和弧形凸起部的切割效率。
优选的，步骤A3）中，沿硅块底面的宽度方向对硅块进行切片，得到单晶硅片。
为了将硅块切割出单晶硅片，目前一般沿硅块底面的长度方向对硅块进行切片，切片时间较长，切片效率有待提高。
本发明沿硅块底面的宽度方向对硅块进行切片，可减少硅块的切片时间，提高硅块的切片效率。
优选的，步骤A1）中，采用带锯截断机或金刚线截断机来截断边皮料。
优选的，步骤A2）中，采用带锯截断机或金刚线截断机切除边皮料小段的两侧尖角部和弧形凸起部。
优选的，步骤A3）中，采用切片机进行硅块切片。
优选的，步骤A1）中，边皮料小段底面的长度为100～250mm。
实施例2
如图7至图9所示，本发明还提供上述边皮料切割方法的另一种具体方案，包括如下具体步骤：
B1）切除边皮料的两侧尖角部和弧形凸起部：沿边皮料的厚度方向切除边皮料的两侧尖角部，且沿边皮料底面的宽度方向切除边皮料的弧形凸起部，得到长方体状硅块；
B2）截断硅块：对硅块进行截断，得到硅块小段；
B3）硅块小段切片：沿平行于硅块小段底面的方向对硅块小段进行切片，得到单晶硅片。
本发明还提供先切除尖角部和弧形凸起部，再截断，最后切片的方案，该方案也可将边皮料切割成单晶硅片，也可提高单晶硅棒的利用率。
沿边皮料的厚度方向切除边皮料的两侧尖角部，并沿边皮料底面的宽度方向切除边皮料的弧形凸起部，可以减少尖角部和弧形凸起部的切割时间，提高尖角部和弧形凸起部的切割效率。
优选的，步骤B3）中，沿硅块小段底面的宽度方向对硅块小段进行切片，得到单晶硅片。
为了将硅块小段切割出单晶硅片，目前一般沿硅块小段底面的长度方向对硅块小段进行切片，切片时间较长，切片效率有待提高。
本发明沿硅块小段底面的宽度方向对硅块小段进行切片，可减少硅块小段的切片时间，提高硅块小段的切片效率。
优选的，步骤B1）中，采用带锯截断机或金刚线截断机切除边皮料的两侧尖角部和弧形凸起部。
优选的，步骤B2）中，采用带锯截断机或金刚线截断机来截断硅块。
优选的，步骤B3）中，采用切片机进行硅块小段切片。
优选的，步骤B2）中，硅块小段底面的长度为100～250mm。
综上可知，本发明能减少尖角部和弧形凸起部的切割时间，提高尖角部和弧形凸起部的切割效率；本发明还能减少切片时间，提高切片效率。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (13)

  1. 边皮料的切割方法，所述边皮料为单晶硅棒切方产生的边皮料；边皮料包括：长方形底面，与底面相背的弧面，以及分设于底面长度方向两端的一对端面；以底面和弧面的结合部为尖角部；以弧面位于边皮料两侧尖角部之间的部分为弧形凸起部；所述切割方法包括：切除两侧尖角部以及切除弧形凸起部；其特征在于：沿边皮料的厚度方向切除两侧尖角部，且沿边皮料底面的宽度方向切除弧形凸起部。
  2. 根据权利要求1所述的边皮料的切割方法，其特征在于，包括如下具体步骤：
    A1）截断边皮料：对边皮料进行截断，得到边皮料小段；
    A2）切除边皮料小段的两侧尖角部和弧形凸起部：沿边皮料小段的厚度方向切除边皮料小段的两侧尖角部，且沿边皮料小段底面的宽度方向切除边皮料小段的弧形凸起部，得到长方体状硅块；
    A3）硅块切片：沿平行于硅块底面的方向对硅块进行切片，得到单晶硅片。
  3. 根据权利要求2所述的边皮料的切割方法，其特征在于，步骤A3）中，沿硅块底面的宽度方向对硅块进行切片，得到单晶硅片。
  4. 根据权利要求2或3所述的边皮料的切割方法，其特征在于，步骤A1）中，采用带锯截断机或金刚线截断机来截断边皮料。
  5. 根据权利要求2或3所述的边皮料的切割方法，其特征在于，步骤A2）中，采用带锯截断机或金刚线截断机切除边皮料小段的两侧尖角部和弧形凸起部。
  6. 根据权利要求2或3所述的边皮料的切割方法，其特征在于，步骤A3）中，采用切片机进行硅块切片。
  7. 根据权利要求2或3所述的边皮料的切割方法，其特征在于，步骤A1）中，边皮料小段底面的长度为100～250mm。
  8. 根据权利要求1所述的边皮料的切割方法，其特征在于，包括如下具体步骤：
    B1）切除边皮料的两侧尖角部和弧形凸起部：沿边皮料的厚度方向切除边皮料的两侧尖角部，且沿边皮料底面的宽度方向切除边皮料的弧形凸起部，得到长方体状硅块；
    B2）截断硅块：对硅块进行截断，得到硅块小段；
    B3）硅块小段切片：沿平行于硅块小段底面的方向对硅块小段进行切片，得到单晶硅片。
  9. 根据权利要求8所述的边皮料的切割方法，其特征在于，步骤B3）中，沿硅块小段底面的宽度方向对硅块小段进行切片，得到单晶硅片。
  10. 根据权利要求8或9所述的边皮料的切割方法，其特征在于，步骤B1）中，采用带锯截断机或金刚线截断机切除边皮料的两侧尖角部和弧形凸起部。
  11. 根据权利要求8或9所述的边皮料的切割方法，其特征在于，步骤B2）中，采用带锯截断机或金刚线截断机来截断硅块。
  12. 根据权利要求8或9所述的边皮料的切割方法，其特征在于，步骤B3）中，采用切片机进行硅块小段切片。
  13. 根据权利要求8或9所述的边皮料的切割方法，其特征在于，步骤B2）中，硅块小段底面的长度为100～250mm。
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