WO2021082514A1 - 晶硅边皮料的切割方法 - Google Patents

晶硅边皮料的切割方法 Download PDF

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Publication number
WO2021082514A1
WO2021082514A1 PCT/CN2020/100651 CN2020100651W WO2021082514A1 WO 2021082514 A1 WO2021082514 A1 WO 2021082514A1 CN 2020100651 W CN2020100651 W CN 2020100651W WO 2021082514 A1 WO2021082514 A1 WO 2021082514A1
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cutting
pair
edge
leather material
edge leather
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PCT/CN2020/100651
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English (en)
French (fr)
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孟祥熙
曹育红
符黎明
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常州时创能源股份有限公司
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Publication of WO2021082514A1 publication Critical patent/WO2021082514A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor

Definitions

  • the invention relates to the field of photovoltaics, in particular to a method for cutting crystalline silicon edge leather.
  • the silicon wafers used in crystalline silicon solar cells are cut from monocrystalline silicon rods or polycrystalline silicon ingots.
  • the cutting process of monocrystalline silicon rods and polycrystalline silicon ingots will produce edge leather, and the edge leather is generally recycled and used, which increases the amount of silicon wafers.
  • the edge leather material to be cut in the present invention is monocrystalline silicon edge leather material or polycrystalline silicon edge leather material, including the following four types of edge leather materials:
  • the first type of edge leather whose outer surface is surrounded by a bottom surface, a pair of end surfaces and a curved top surface;
  • the third type of edge leather whose outer surface is surrounded by a bottom surface, a pair of end surfaces, a pair of side surfaces and a curved top surface;
  • the fourth type of edge leather whose outer surface is surrounded by a bottom surface, a pair of end surfaces, a top surface, and a pair of arcuate side surfaces.
  • the present invention can cut the cuboid-shaped silicon block with the edge leather material, and can further cut the cuboid-shaped silicon block into silicon wafers, thereby increasing the output of silicon wafers and reducing the energy consumption and cost of silicon wafer production.
  • the edge leather material to be cut in Example 1 includes: a rectangular bottom surface, a pair of end surfaces separately provided at both ends of the bottom surface, and a top surface located between the pair of end surfaces;
  • the bottom surface of the edge leather material includes two pairs of side lines: a first pair of side lines as a pair of opposite sides of the bottom surface, and a second pair of side lines as a pair of opposite sides of the bottom surface;
  • a pair of end surfaces of the edge leather material are perpendicular to the bottom surface, and the pair of end surfaces correspond to the first pair of edges of the bottom surface one-to-one, and the end surface has the corresponding bottom edge line as its bottom edge;
  • the top surface of the edge leather material is a curved surface, and the top surface extends from one of the second pair of edges to the other of the second pair of edges;
  • the outer surface of the edge leather material is surrounded by a bottom surface, a pair of end surfaces and a curved top surface.
  • Embodiment 1 provides the cutting method of the above-mentioned edge leather material, and the cutting method includes: cutting the edge leather material into a rectangular parallelepiped silicon block, and cutting the rectangular parallelepiped silicon block into silicon wafers;
  • the cutting of the edge leather material into a rectangular parallelepiped silicon block includes: top cutting and side cutting;
  • the top cutting includes: cutting the top surface of the edge leather material parallel to the bottom surface along the extension direction of the second pair of side lines;
  • the side cutting includes: cutting the two sides of the edge leather material perpendicular to the bottom surface and a pair of end surfaces along the extension direction of the second pair of edge lines, and the two sides of the edge leather material have a bottom surface and a curved surface. The two sides where the top surface intersects;
  • edge leather material becomes a rectangular parallelepiped silicon block after top cutting and side cutting.
  • the edge leather material to be cut in Example 2 includes: a rectangular bottom surface, a pair of end surfaces separately provided at both ends of the bottom surface, and a top surface located between the pair of end surfaces;
  • the bottom surface of the edge leather material includes two pairs of side lines: a first pair of side lines as a pair of opposite sides of the bottom surface, and a second pair of side lines as a pair of opposite sides of the bottom surface;
  • a pair of end surfaces of the edge leather material are perpendicular to the bottom surface, and the pair of end surfaces correspond to the first pair of edges of the bottom surface one-to-one, and the end surface has the corresponding bottom edge line as its bottom edge;
  • the edge leather material further includes: a side surface located between the pair of end surfaces and perpendicular to the bottom surface; the side surface corresponds to one of the second pair of side lines, and the side surface has the corresponding bottom side line as its bottom side;
  • the side surface is also perpendicular to the pair of end surfaces; the shape of the side surface is preferably rectangular;
  • the top surface of the edge leather material is a curved surface, and the top surface extends from the other edge of the second pair of edges to the top edge of the side surface;
  • the outer surface of the edge leather material is surrounded by a bottom surface, a pair of end surfaces, a side surface and a curved top surface.
  • Embodiment 2 provides the cutting method of the above-mentioned edge leather material, and the cutting method includes: cutting the edge leather material into a rectangular parallelepiped silicon block, and cutting the rectangular parallelepiped silicon block into silicon wafers;
  • the cutting of the edge leather material into a rectangular parallelepiped silicon block includes: top cutting and side cutting;
  • the top cutting includes: cutting the top surface of the edge leather material parallel to the bottom surface along the extension direction of the second pair of side lines;
  • the side cutting includes: cutting one side of the side leather material perpendicular to the bottom surface and a pair of end surfaces along the extension direction of the second pair of side lines, and one side of the side leather material has a bottom surface and a curved surface. The side where the top surface intersects;
  • edge leather material becomes a rectangular parallelepiped silicon block after top cutting and side cutting.
  • the edge leather material to be cut in Example 3 includes: a rectangular bottom surface, a pair of end surfaces separately provided at both ends of the bottom surface, and a top surface located between the pair of end surfaces;
  • the bottom surface of the edge leather material includes two pairs of side lines: a first pair of side lines as a pair of opposite sides of the bottom surface, and a second pair of side lines as a pair of opposite sides of the bottom surface;
  • a pair of end surfaces of the edge leather material are perpendicular to the bottom surface, and the pair of end surfaces correspond to the first pair of edges of the bottom surface one-to-one, and the end surface has the corresponding bottom edge line as its bottom edge;
  • the edge leather material further includes: a pair of side surfaces located between the pair of end surfaces and perpendicular to the bottom surface; the pair of side surfaces corresponds to the second pair of side lines one-to-one, and the side surface has the corresponding bottom side line as its bottom edge;
  • the side faces are also perpendicular to the pair of end faces; the shape of the pair of side faces is preferably rectangular; the pair of side faces is preferably arranged symmetrically;
  • the top surface of the edge leather material is a curved surface, and the top surface extends from the top edge of one side surface to the top edge of the other side surface;
  • the outer surface of the edge leather material is surrounded by a bottom surface, a pair of end surfaces, a pair of side surfaces and a curved top surface.
  • Embodiment 3 provides the above-mentioned cutting method of the edge leather material, and the cutting method includes: cutting the edge leather material into a rectangular parallelepiped silicon block, and cutting the rectangular parallelepiped silicon block into silicon wafers;
  • the cutting of the edge leather material into a rectangular parallelepiped silicon block includes: top cutting;
  • the top cutting includes: cutting the top surface of the edge leather material parallel to the bottom surface along the extension direction of the second pair of side lines;
  • edge leather material is cut into a rectangular parallelepiped silicon block after the top is cut.
  • the edge leather material to be cut in Example 4 includes: a rectangular bottom surface, a pair of end surfaces separately provided at both ends of the bottom surface, and a top surface located between the pair of end surfaces;
  • the bottom surface of the edge leather material includes two pairs of side lines: a first pair of side lines as a pair of opposite sides of the bottom surface, and a second pair of side lines as a pair of opposite sides of the bottom surface;
  • a pair of end surfaces of the edge leather material are perpendicular to the bottom surface, and the pair of end surfaces correspond to the first pair of edges of the bottom surface one-to-one, and the end surface has the corresponding bottom edge line as its bottom edge;
  • the top surface of the edge leather material is parallel to the bottom surface; the projection of the top surface on the bottom surface is located between the second pair of edges;
  • the edge leather material also includes: a pair of side surfaces located between the pair of end surfaces and separately arranged on both sides of the top surface; the pair of side surfaces corresponds to the second pair of side lines one-to-one, and the side surface has the corresponding bottom side line as its bottom side ;
  • the pair of side surfaces are arc surfaces, and the side surfaces extend from the corresponding bottom edge to the top surface; the pair of side surfaces are preferably symmetrically arranged;
  • the outer surface of the edge leather is surrounded by a bottom surface, a pair of end surfaces, a top surface and a pair of arcuate side surfaces.
  • Embodiment 4 provides the cutting method of the above-mentioned edge leather material, and the cutting method includes: cutting the edge leather material into a rectangular parallelepiped silicon block, and cutting the rectangular parallelepiped silicon block into silicon wafers;
  • the cutting of the edge leather material into a rectangular parallelepiped silicon block includes: side cutting;
  • the side cutting includes: cutting the two sides of the edge leather material perpendicular to the bottom surface and a pair of end surfaces along the extension direction of the second pair of edge lines, and the two sides of the edge leather material are the bottom surface and a pair of arcs. The two sides where the planar sides intersect;
  • the side leather material becomes a rectangular parallelepiped silicon block after being cut on the side.
  • the edge leather in each of the foregoing embodiments is monocrystalline silicon edge leather or polycrystalline silicon edge leather.
  • the edge leather material in each of the above embodiments can be obtained by cutting off a long section of the edge leather material.
  • the rectangular parallelepiped silicon block can be directly cut into silicon wafers; if the bottom surface of the silicon block is rectangular, the silicon block is preferably sliced along the width direction of the bottom surface of the silicon block.
  • the silicon block can be cut into a rectangular silicon block segment first, and then the silicon block segment is cut into silicon wafers; if the bottom surface of the silicon block segment is rectangular, it is preferable to align the silicon block along the width direction of the bottom surface of the silicon block segment. Small sections are sliced.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Photovoltaic Devices (AREA)

Abstract

一种晶硅边皮料的切割方法，将单晶硅边皮料或多晶硅边皮料切割成长方体状硅块，将长方体状硅块进一步切割成硅片。

Description

晶硅边皮料的切割方法 技术领域
本发明涉及光伏领域，具体涉及晶硅边皮料的切割方法。
 背景技术
晶体硅太阳能电池所用硅片由单晶硅棒或多晶硅锭切割而成，单晶硅棒、多晶硅锭切割过程中会产生边皮料，而边皮料一般都是回炉利用，这增加了硅片生产的能耗和成本，如果能将边皮料进一步切割成硅片，则可以增加硅片的产出，降低硅片生产的能耗和成本。
 技术解决方案
本发明所要切割的边皮料，为单晶硅边皮料或多晶硅边皮料，包括如下四种外形的边皮料：
1）第一种边皮料，其外表面由底面、一对端面以及弧面状顶面围成；
2）第二种边皮料，其外表面由底面、一对端面、一个侧面以及弧面状顶面围成；
3）第三种边皮料，其外表面由底面、一对端面、一对侧面以及弧面状顶面围成；
4）第四种边皮料，其外表面由底面、一对端面、顶面以及一对弧面状侧面围成。
 有益效果
本发明能将上述边皮料切割成长方体状硅块，还能将长方体状硅块进一步切割成硅片，进而增加硅片的产出，降低硅片生产的能耗和成本。
 本发明的最佳实施方式
下面结合实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
实施例1
实施例1所要切割的边皮料，包括：矩形底面，分设于底面两端的一对端面，以及位于该对端面之间的顶面；
所述边皮料的底面包括两对边线：作为底面一对对边的第一对边线，以及作为底面另一对对边的第二对边线；
所述边皮料的一对端面与底面垂直，该对端面与底面的第一对边线一一对应，且端面以对应的底面边线为其底边；
所述边皮料的顶面为弧面，且顶面由第二对边线中的一个延伸至第二对边线中的另一个；
所述边皮料的外表面由底面、一对端面以及弧面状顶面围成。
实施例1提供上述边皮料的切割方法，该切割方法包括：将边皮料切割成长方体状硅块，将长方体状硅块切割成硅片；
所述将边皮料切割成长方体状硅块，包括：顶部切割和侧部切割；
所述顶部切割，包括：沿第二对边线的延伸方向，将边皮料的顶面切成与底面平行；
所述侧部切割，包括：沿第二对边线的延伸方向，将边皮料的两侧切成既与底面垂直又与一对端面垂直，该边皮料的两侧为底面与弧面状顶面相交的两侧；
且边皮料经过顶部切割和侧部切割后成为长方体状硅块。
实施例2
实施例2所要切割的边皮料，包括：矩形底面，分设于底面两端的一对端面，以及位于该对端面之间的顶面；
所述边皮料的底面包括两对边线：作为底面一对对边的第一对边线，以及作为底面另一对对边的第二对边线；
所述边皮料的一对端面与底面垂直，该对端面与底面的第一对边线一一对应，且端面以对应的底面边线为其底边；
所述边皮料还包括：位于一对端面之间、且与底面垂直的一个侧面；该侧面与第二对边线中的一个边线相对应，且侧面以对应的底面边线为其底边；该侧面还与一对端面垂直；该侧面的形状优选为矩形；
所述边皮料的顶面为弧面，且顶面由第二对边线中的另一个边线延伸至侧面的顶边；
所述边皮料的外表面由底面、一对端面、一个侧面以及弧面状顶面围成。
实施例2提供上述边皮料的切割方法，该切割方法包括：将边皮料切割成长方体状硅块，将长方体状硅块切割成硅片；
所述将边皮料切割成长方体状硅块，包括：顶部切割和侧部切割；
所述顶部切割，包括：沿第二对边线的延伸方向，将边皮料的顶面切成与底面平行；
所述侧部切割，包括：沿第二对边线的延伸方向，将边皮料的一侧切成既与底面垂直又与一对端面垂直，该边皮料的一侧为底面与弧面状顶面相交的一侧；
且边皮料经过顶部切割和侧部切割后成为长方体状硅块。
实施例3
实施例3所要切割的边皮料，包括：矩形底面，分设于底面两端的一对端面，以及位于该对端面之间的顶面；
所述边皮料的底面包括两对边线：作为底面一对对边的第一对边线，以及作为底面另一对对边的第二对边线；
所述边皮料的一对端面与底面垂直，该对端面与底面的第一对边线一一对应，且端面以对应的底面边线为其底边；
所述边皮料还包括：位于一对端面之间、且与底面垂直的一对侧面；该对侧面与第二对边线一一对应，且侧面以对应的底面边线为其底边；该对侧面还与一对端面垂直；该对侧面的形状优选为矩形；该对侧面优选为对称设置；
所述边皮料的顶面为弧面，且顶面由一个侧面的顶边延伸至另一个侧面的顶边；
所述边皮料的外表面由底面、一对端面、一对侧面以及弧面状顶面围成。
实施例3提供上述边皮料的切割方法，该切割方法包括：将边皮料切割成长方体状硅块，将长方体状硅块切割成硅片；
所述将边皮料切割成长方体状硅块，包括：顶部切割；
所述顶部切割，包括：沿第二对边线的延伸方向，将边皮料的顶面切成与底面平行；
且边皮料经过顶部切割后成为长方体状硅块。
实施例4
实施例4所要切割的边皮料，包括：矩形底面，分设于底面两端的一对端面，以及位于该对端面之间的顶面；
所述边皮料的底面包括两对边线：作为底面一对对边的第一对边线，以及作为底面另一对对边的第二对边线；
所述边皮料的一对端面与底面垂直，该对端面与底面的第一对边线一一对应，且端面以对应的底面边线为其底边；
所述边皮料的顶面与底面平行；该顶面在底面上的投影，位于第二对边线之间；
所述边皮料还包括：位于一对端面之间、且分设于顶面两侧的一对侧面；该对侧面与第二对边线一一对应，且侧面以对应的底面边线为其底边；该对侧面为弧面，且侧面由对应的底面边线延伸至顶面；该对侧面优选为对称设置；
所述边皮料的外表面由底面、一对端面、顶面以及一对弧面状侧面围成。
实施例4提供上述边皮料的切割方法，该切割方法包括：将边皮料切割成长方体状硅块，将长方体状硅块切割成硅片；
所述将边皮料切割成长方体状硅块，包括：侧部切割；
所述侧部切割，包括：沿第二对边线的延伸方向，将边皮料的两侧切成既与底面垂直又与一对端面垂直，该边皮料的两侧为底面与一对弧面状侧面相交的两侧；
且边皮料经过侧部切割后成为长方体状硅块。
上述各实施例中的边皮料为单晶硅边皮料或多晶硅边皮料。
上述各实施例中的边皮料可以由边皮料长段截断而得。
上述各实施例可以将长方体状硅块直接切割成硅片；若硅块的底面为长方形，则优选沿硅块底面的宽度方向对硅块进行切片。
上述各实施例还可以先将硅块截断成长方体状硅块小段，再将硅块小段切割成硅片；若硅块小段的底面为长方形，则优选沿硅块小段底面的宽度方向对硅块小段进行切片。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 晶硅边皮料的切割方法，所述边皮料为单晶硅边皮料或多晶硅边皮料；
    所述边皮料包括：矩形底面，分设于底面两端的一对端面，以及位于该对端面之间的顶面；
    所述边皮料的底面包括两对边线：作为底面一对对边的第一对边线，以及作为底面另一对对边的第二对边线；
    所述边皮料的一对端面与底面垂直，该对端面与底面的第一对边线一一对应，且端面以对应的底面边线为其底边；
    其特征在于：
    所述切割方法包括：将边皮料切割成长方体状硅块；
    所述将边皮料切割成长方体状硅块，包括：顶部切割和/或侧部切割；
    所述顶部切割，包括：沿第二对边线的延伸方向，将边皮料的顶面切成与底面平行；
    所述侧部切割，包括：沿第二对边线的延伸方向，将边皮料的一侧或两侧切成既与底面垂直又与一对端面垂直；
    且边皮料经过顶部切割和/或侧部切割后成为长方体状硅块。
  2. 根据权利要求1所述的晶硅边皮料的切割方法，其特征在于，所述边皮料的顶面为弧面，且顶面由第二对边线中的一个延伸至第二对边线中的另一个；边皮料的外表面由底面、一对端面以及弧面状顶面围成；
    所述将边皮料切割成长方体状硅块，包括：顶部切割和侧部切割；
    所述顶部切割，包括：沿第二对边线的延伸方向，将边皮料的顶面切成与底面平行；
    所述侧部切割，包括：沿第二对边线的延伸方向，将边皮料的两侧切成既与底面垂直又与一对端面垂直，该边皮料的两侧为底面与弧面状顶面相交的两侧；
    且边皮料经过顶部切割和侧部切割后成为长方体状硅块。
  3. 根据权利要求1所述的晶硅边皮料的切割方法，其特征在于，所述边皮料还包括：位于一对端面之间、且与底面垂直的一个侧面；该侧面与第二对边线中的一个边线相对应，且侧面以对应的底面边线为其底边；该侧面还与一对端面垂直；边皮料的顶面为弧面，且顶面由第二对边线中的另一个边线延伸至侧面的顶边；边皮料的外表面由底面、一对端面、一个侧面以及弧面状顶面围成；
    所述将边皮料切割成长方体状硅块，包括：顶部切割和侧部切割；
    所述顶部切割，包括：沿第二对边线的延伸方向，将边皮料的顶面切成与底面平行；
    所述侧部切割，包括：沿第二对边线的延伸方向，将边皮料的一侧切成既与底面垂直又与一对端面垂直，该边皮料的一侧为底面与弧面状顶面相交的一侧；
    且边皮料经过顶部切割和侧部切割后成为长方体状硅块。
  4. 根据权利要求1所述的晶硅边皮料的切割方法，其特征在于，所述边皮料还包括：位于一对端面之间、且与底面垂直的一对侧面；该对侧面与第二对边线一一对应，且侧面以对应的底面边线为其底边；该对侧面还与一对端面垂直；边皮料的顶面为弧面，且顶面由一个侧面的顶边延伸至另一个侧面的顶边；边皮料的外表面由底面、一对端面、一对侧面以及弧面状顶面围成；
    所述将边皮料切割成长方体状硅块，包括：顶部切割；
    所述顶部切割，包括：沿第二对边线的延伸方向，将边皮料的顶面切成与底面平行；
    且边皮料经过顶部切割后成为长方体状硅块。
  5. 根据权利要求1所述的晶硅边皮料的切割方法，其特征在于，所述边皮料的顶面与底面平行；该顶面在底面上的投影，位于第二对边线之间；边皮料还包括：位于一对端面之间、且分设于顶面两侧的一对侧面；该对侧面与第二对边线一一对应，且侧面以对应的底面边线为其底边；该对侧面为弧面，且侧面由对应的底面边线延伸至顶面；边皮料的外表面由底面、一对端面、顶面以及一对弧面状侧面围成；
    所述将边皮料切割成长方体状硅块，包括：侧部切割；
    所述侧部切割，包括：沿第二对边线的延伸方向，将边皮料的两侧切成既与底面垂直又与一对端面垂直，该边皮料的两侧为底面与一对弧面状侧面相交的两侧；
    且边皮料经过侧部切割后成为长方体状硅块。
  6. 根据权利要求1至5中任一项所述的晶硅边皮料的切割方法，其特征在于，所述边皮料由边皮料长段截断而得。
  7. 根据权利要求1至5中任一项所述的晶硅边皮料的切割方法，其特征在于，所述切割方法还包括：将长方体状硅块切割成硅片。
  8. 根据权利要求7所述的晶硅边皮料的切割方法，其特征在于，所述硅块的底面为长方形；
    所述将长方体状硅块切割成硅片，包括：沿硅块底面的宽度方向对硅块进行切片。
  9. 根据权利要求7所述的晶硅边皮料的切割方法，其特征在于，所述将长方体状硅块切割成硅片，包括：先将硅块截断成长方体状硅块小段，再将硅块小段切割成硅片。
  10. 根据权利要求9所述的晶硅边皮料的切割方法，其特征在于，所述硅块小段的底面为长方形；
    所述将硅块小段切割成硅片，包括：沿硅块小段底面的宽度方向对硅块小段进行切片。
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