WO2020217970A1 - ワイヤ形状測定装置及びワイヤ三次元画像生成方法並びにワイヤ形状測定方法 - Google Patents
ワイヤ形状測定装置及びワイヤ三次元画像生成方法並びにワイヤ形状測定方法 Download PDFInfo
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- WO2020217970A1 WO2020217970A1 PCT/JP2020/015653 JP2020015653W WO2020217970A1 WO 2020217970 A1 WO2020217970 A1 WO 2020217970A1 JP 2020015653 W JP2020015653 W JP 2020015653W WO 2020217970 A1 WO2020217970 A1 WO 2020217970A1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
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- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/245—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using a plurality of fixed, simultaneously operating transducers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/03—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring coordinates of points
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
- G01B11/2518—Projection by scanning of the object
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- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Definitions
- the present invention is a wire shape measuring device for measuring the shape of a wire connecting an electrode of a semiconductor element mounted on a substrate and an electrode of the substrate, a method for generating a three-dimensional image of the wire, and a wire for measuring the wire shape. Regarding the shape measurement method.
- the loop shape of the bonding wire (hereinafter referred to as the wire) that connects the pad of the semiconductor chip and the lead of the substrate is measured.
- the wire As a method for measuring the loop shape of a wire, a method for measuring the three-dimensional shape of the entire wire by detecting the XY coordinates of the wire at the focusing height of the optical system has been proposed (see, for example, Patent Document 1). ).
- the wire is illuminated with a ring-shaped illuminator, the wire image is imaged while changing the focusing height using an optical system with a shallow depth of focus, and the dark part appearing in the center of each wire image is detected.
- each XY coordinate of the wire at each focusing height is detected, and the three-dimensional shape of the entire wire is detected from the data.
- an object of the present invention is to provide a wire shape measuring device capable of measuring the shape of a wire with high accuracy in a short time.
- the wire shape measuring device of the present invention is a wire that connects a substrate, a semiconductor element attached to the substrate, an electrode of the semiconductor element and an electrode of the substrate, or one electrode of the semiconductor element and another electrode of the semiconductor element. It is a wire shape measuring device of a semiconductor device including, and measures the shape of a wire based on a plurality of cameras that capture a two-dimensional image of the semiconductor device and each two-dimensional image of the semiconductor device acquired by each camera. A control unit is provided, and the control unit is based on each two-dimensional image of the semiconductor device acquired by each camera by pattern matching using the connection position information of the wire to the substrate or the semiconductor element and the thickness information of the wire. It is characterized in that a three-dimensional image of a wire is generated and the shape of the wire is measured based on the three-dimensional image of the generated wire.
- a three-dimensional image of the wire is generated from each two-dimensional image of the semiconductor device acquired by each camera by pattern matching using the connection position information of the wire to the substrate or the semiconductor element and the thickness information of the wire. Therefore, a three-dimensional image can be generated accurately in a short time. This makes it possible to provide a wire shape measuring device capable of measuring the shape of a wire with high accuracy in a short time.
- the control unit uses the connection position information of the wire to the substrate or the semiconductor element and the thickness information of the wire in each two-dimensional image of the semiconductor device acquired by each camera.
- the two-dimensional coordinates of each point in each two-dimensional image corresponding to one part of the wire are extracted from, and the three-dimensional coordinates of one part of the wire are calculated using the extracted two-dimensional coordinates.
- a three-dimensional image of the wire may be generated based on the calculated three-dimensional coordinates.
- the control unit uses the connection position information of the wire to the substrate or the semiconductor element and the thickness information of the wire to obtain each two-dimensional image of the semiconductor device acquired by each camera.
- each two-dimensional coordinate of each point in each two-dimensional image corresponding to one part of the wire from the inside from the beginning to the end of the wire, it corresponds to each of a plurality of parts of the wire.
- the original coordinates may be calculated, and a three-dimensional image from the beginning to the end of the wire may be generated based on the calculated three-dimensional coordinates of a plurality of parts of the wire.
- the image of the wire is specified from the two-dimensional image of the entire semiconductor device captured by the camera, and the wire is identified. Since the two-dimensional coordinates of the point on the image are extracted, the two-dimensional coordinates of the point on the wire image can be extracted in a short time from the two-dimensional image of the entire semiconductor device. This makes it possible to provide a wire shape measuring device capable of measuring the shape of a wire with high accuracy in a short time.
- the cameras may be arranged on both sides of the wire so that the optical axis intersects the extending direction of the wire.
- each camera By arranging each camera in this way, the difference in the two-dimensional coordinates of each point in each two-dimensional image corresponding to one part of the wire imaged by each camera becomes large, and one part of the wire is accurately measured.
- the three-dimensional coordinates of can be calculated, and the accuracy of wire shape measurement can be improved.
- the control unit may inspect the shape of the wire based on the three-dimensional image of the generated wire, or compare the three-dimensional image of the generated wire with the reference shape of the wire.
- the shape of the wire may be inspected by the above method, or the shape of the wire may be inspected by extracting the shape parameter of the wire from the three-dimensional image of the generated wire and comparing the extracted shape parameter with the reference value of the shape parameter. Good.
- the wire three-dimensional image generation method of the present invention connects a substrate, a semiconductor element attached to the substrate, an electrode of the semiconductor element and an electrode of the substrate, or one electrode of the semiconductor element and another electrode of the semiconductor element.
- a wire three-dimensional image generation method for a semiconductor device including a wire, an imaging step of capturing a two-dimensional image of the semiconductor device with a plurality of cameras, information on the connection position of the wire to a substrate or a semiconductor element, and It is characterized by including a three-dimensional image generation step of generating a three-dimensional image of the wire from each two-dimensional image of the semiconductor device acquired by each camera by pattern matching using the thickness information of the wire.
- a three-dimensional image of the wire is generated from each two-dimensional image of the semiconductor device acquired by each camera by pattern matching using the connection position information of the wire to the substrate or the semiconductor element and the thickness information of the wire. Therefore, a three-dimensional image can be generated with high accuracy in a short time.
- the three-dimensional image generation step is each of the semiconductor devices acquired by each camera using the connection position information of the wire to the substrate or the semiconductor element and the wire thickness information.
- a two-dimensional coordinate extraction step that extracts each two-dimensional coordinate of each point in each two-dimensional image corresponding to one part of the wire from the two-dimensional image, and one of the wires using each extracted two-dimensional coordinate.
- a three-dimensional coordinate calculation step for calculating the three-dimensional coordinates of one of the parts of the above portion and an image generation step for generating a three-dimensional image of the wire based on the calculated three-dimensional coordinates may be included.
- the two-dimensional coordinate extraction step is a semiconductor device acquired by each camera using the connection position information of the wire to the substrate or the semiconductor element and the thickness information of the wire.
- a plurality of wires are used.
- the 2D coordinates of each point in each 2D image corresponding to each part of the wire are extracted, and the 3D coordinate calculation step is performed in each 2D image in each 2D image corresponding to a plurality of parts of the extracted wire.
- the coordinates are used to calculate each 3D coordinate of multiple parts of the wire, and the image generation step generates a 3D image from the beginning to the end of the wire based on the calculated 3D coordinates of the multiple parts of the wire. You may.
- the image of the wire is specified from the two-dimensional image of the entire semiconductor device captured by the camera, and the wire is identified. Since the two-dimensional coordinates of the point on the image are extracted, the two-dimensional coordinates of the point on the wire image can be extracted in a short time from the two-dimensional image of the entire semiconductor device.
- the wire shape measuring method of the present invention is a wire that connects a substrate, a semiconductor element attached to the substrate, an electrode of the semiconductor element and an electrode of the substrate, or one electrode of the semiconductor element and another electrode of the semiconductor element.
- This is a method for measuring the wire shape of a semiconductor device, comprising: an imaging step of capturing a two-dimensional image of the semiconductor device with a plurality of cameras, information on the connection position of the wire to a substrate or a semiconductor element, and a thickness of the wire.
- a three-dimensional image generation step of generating a three-dimensional image of a wire from each two-dimensional image of a semiconductor device acquired by each camera by pattern matching using information, and a wire shape based on the generated three-dimensional image of the wire. It is characterized by including a measurement step for performing measurement.
- the wire shape measuring method of the present invention includes an inspection step of inspecting the shape of the wire based on the three-dimensional image of the generated wire, and the inspection step compares the three-dimensional image of the generated wire with the reference shape of the wire. By doing so, the shape of the wire may be inspected. Further, in the inspection step, the shape inspection of the wire may be performed by extracting the shape parameter of the wire from the three-dimensional image of the generated wire and comparing the extracted shape parameter with the reference value of the shape parameter.
- the present invention can provide a wire shape measuring device capable of measuring the shape of a wire with high accuracy in a short time.
- the wire shape measuring device 100 includes a substrate 11, a semiconductor element 20 attached to the substrate 11, a wire 30 connecting the electrode 25 of the semiconductor element 20 and the electrode 12 of the substrate 11.
- This is a device for measuring the shape of the wire 30 of the semiconductor device 10 provided with the above.
- the wire shape measuring device 100 includes a plurality of cameras 41 to 44 that capture a two-dimensional image of the semiconductor device 10, and a control unit 50 that inspects the shape of the wire 30 based on the two-dimensional images acquired by the cameras 41 to 44. Consists of. In the following description, it is assumed that the X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction is the vertical direction.
- the cameras 41 and 42 are arranged so that the optical axes 41a and 42a extend in the X direction, and the semiconductor device 10 is imaged from an obliquely upward direction in the X direction.
- the cameras 43 and 44 are arranged so that the optical axes 43a and 44a extend in the Y direction, and the semiconductor device 10 is imaged from diagonally above in the Y direction. Therefore, the cameras 41 and 42 are arranged on both sides of the wire 30 extending in the Y direction so that the optical axes 41a and 42a intersect with the wire 30 extending in the Y direction, and the cameras 43 and 44 are arranged on both sides of the optical axes 43a and 44a.
- the control unit 50 is a computer including a CPU 51 that processes information internally and a memory 52 that stores data, programs, and the like.
- the wire shape measuring device 100 of the embodiment will be described with reference to FIGS. 3 to 6.
- the wire 30 extending in the X direction between the electrode 25 of the semiconductor element 20 and the electrode 12 of the substrate 11 is arranged diagonally above the wire 30 on the plus side in the Y direction.
- a three-dimensional image of the wire 30 was generated and generated based on the two-dimensional image captured by the camera 43 and the two-dimensional image captured by the camera 44 arranged diagonally above the wire 30 on the minus side in the Y direction. It will be described as inspecting the shape of the wire 30 extending in the X direction using a three-dimensional image.
- FIG. 4 inspecting the shape of the wire 30 extending in the X direction using a three-dimensional image.
- reference numerals 35 to 37, 39 are two-dimensional coordinate detection regions for detecting the two-dimensional coordinates of the wire 30 set at predetermined intervals ⁇ X in the middle of the X-axis connecting the start end 31 and the end 32 of the wire 30.
- the part of the wire 30 located at 60 (described later with reference to FIGS. 5 and 6) is shown.
- the CPU 51 of the control unit 50 has coordinates of the start end 31 connected to the electrode 25 of the semiconductor element 20 of the wire 30 from the memory 52 and the end 32 connected to the electrode 12 of the substrate 11. Read (xs, ys) and (xe, ye). Here, each coordinate is the connection position information of the wire 30 to the semiconductor element 20. Further, the CPU 51 of the control unit 50 reads out the diameter of the wire 30 which is the thickness information of the wire 30 from the memory 52.
- control unit 50 captures an image of the semiconductor device 10 with the cameras 43 and 44 as shown in step S102 of FIG. 3, and stores the captured image in the memory 52 as shown in step S103 of FIG. ..
- the two-dimensional image of the wire 30 acquired by the camera 43 changes in the height of the wire 30 as shown in FIG.
- the image is curved to the minus side in the Y direction accordingly.
- the two-dimensional image of the wire 30 acquired by the camera 44 is the height of the wire 30 as shown in FIG.
- the image is curved to the plus side in the Y direction according to the change.
- step S104 and FIG. 5 of FIG. 3 the control unit 50 is placed at predetermined intervals ⁇ X between the start end 31 and the end 32 of the wire 30 in the image acquired by the camera 43 and connected to the X axis.
- a two-dimensional coordinate detection area 60 for detecting the two-dimensional coordinates of the wire 30 is set.
- the control unit 50 searches the two-dimensional coordinate detection region 60 for a linear image having the same thickness as the diameter of the wire 30 by using pattern matching.
- the control unit 50 detects an image having a thickness similar to the diameter of the wire 30, the two-dimensional coordinates of the center point of the image are set to (x31, y31), (x32, y32), (x33, y33). Acquire and store in the memory 52.
- the two-dimensional coordinates (x31, y31), (x32, y32), (x33, y33) are the two-dimensional coordinates corresponding to the parts 35 to 36 of the wire 30 shown in FIG.
- the control unit 50 repeats the operation of acquiring the two-dimensional coordinates from the start end 31 to the end 32, and is the same as the diameter of the wire 30 in all the two-dimensional coordinate detection regions 60 from the start end 31 to the end 32.
- the two-dimensional coordinates (x31, y31) to (x3e, y3e) of the center point of the image having the thickness of are acquired. These two-dimensional coordinates are the two-dimensional coordinates corresponding to the parts 35 to 39 of the wire 30, respectively.
- the control unit 50 sets the two-dimensional coordinate detection area 60 in the image acquired by the camera 44, and uses pattern matching to set the wire 30 in the two-dimensional coordinate detection area 60. Search for a linear image with a thickness similar to the diameter. Then, when the control unit 50 detects an image having a thickness similar to the diameter of the wire 30, it acquires the two-dimensional coordinates of the center point of the image as (x41, y41) to (x4e, y4e) and stores them in the memory 52. To do. These two-dimensional coordinates are the two-dimensional coordinates corresponding to the parts 35 to 39 of the wire 30, respectively. Then, if the control unit 50 determines YES in step S106 of FIG. 3, the control unit 50 proceeds to step S107 of FIG.
- the two-dimensional coordinates (x31, y31) acquired from the image of the camera 43 and the two-dimensional coordinates (x41, y41) acquired from the image of the camera 44 in step S105 of FIG. 3 are the same parts of the wire 30 shown in FIG. Since the two-dimensional coordinates correspond to 35, the three-dimensional coordinates of the part 35 of the wire 30 can be calculated from the two two-dimensional coordinates and the positions of the cameras 43 and 44. Similarly, the two-dimensional coordinates (x32, y32) and (x33, y33) acquired from the image of the camera 43 and the two-dimensional coordinates (x42, y42) and (x43, y43) acquired from the image of the camera 44 are shown in FIG. With the two-dimensional coordinates corresponding to the same parts 36 and 37 of the wire 30 shown in 4, the three-dimensional coordinates of the parts 36 and 37 of the wire 30 can be calculated from these coordinates.
- step S107 of FIG. 3 the control unit 50 acquires the two-dimensional coordinates (x31, y31) to (x3e, y3e) from the start end 31 to the end 32 of the wire 30 acquired by the camera 43 and the camera 44. From the start end 31 of the wire 30 shown in FIG. 4 based on the two-dimensional coordinates (x41, y41) to (x4e, y4e) from the start end 31 to the end end 32 of the wire 30 and the positions of the cameras 43 and 44. The three-dimensional coordinates of the plurality of parts 35 to 39 up to the end 32 are calculated.
- step S108 of FIG. 3 the control unit 50 connects the three-dimensional coordinates of the plurality of parts 35 to 39 calculated to generate a three-dimensional image of the wire 30. Therefore, the three-dimensional image of the wire 30 is a curved curve that is bent three-dimensionally.
- the control unit 50 measures the shape and dimension of the wire 30 based on the three-dimensional image of the generated wire 30 in step S109 of FIG. Further, the control unit 50 compares the three-dimensional image of the generated wire 30 with the reference shape such as the reference loop shape of the wire 30, detects the difference in dimensions between the two, and the difference exceeds a predetermined threshold value. In some cases, it may be determined that the shape of the wire 30 is abnormal.
- control unit 50 determines the shape parameters of the wire 30, for example, the loop height which is the height from the start end 31 of the wire 30, and the thickness of the crimping ball formed at the start end 31.
- the inspection may be performed by measuring the shape dimensions such as the diameter of the crimping ball and comparing each measured shape dimension with the reference value.
- the wire shape measuring device 100 uses the two-dimensional coordinates (xs, ys) and (xe, ye) of the start end 31 and the end 32 of the wire 30 and the diameter of the wire 30 for pattern matching.
- the three-dimensional image of the wire 30 is generated from each two-dimensional image of the semiconductor device 10 acquired by the cameras 43 and 44, so that the three-dimensional image can be generated accurately in a short time. This enables shape measurement and shape inspection of the wire 30 with high accuracy and in a short time.
- shape measurement and shape inspection are performed by performing the same processing based on the two-dimensional images captured by the cameras 41 and 42.
- the two-dimensional images acquired by the four cameras 41 to 44 may be processed to generate the three-dimensional image of the wire 30.
- the two-dimensional images of four or more cameras may be processed to generate a three-dimensional image of the wire 30.
- the wire 30 for measuring the shape or inspecting the shape has been described as connecting the electrode 25 of the semiconductor element 20 and the electrode 12 of the substrate 11, but the present invention is not limited to this.
- the semiconductor device 10 stacks a plurality of semiconductor elements 20 on the substrate 11, and each electrode 25 of the semiconductor element 20 in each layer, the electrode 25 of the semiconductor element 20 in the lowermost layer, and the electrode 12 of the substrate 11 are continuous. It can also be applied to inspect the shape of the wires 30 to be connected.
- the wire 30 connects one electrode 25 of the semiconductor element 20 in one layer and another electrode 25 of the semiconductor element 20 in the other layer, and the electrode 25 of the semiconductor element 20 in the lowermost layer and the substrate 11 Is connected to the electrode 12.
- a two-dimensional image of the semiconductor device 10 is captured by a camera as shown in steps S102 and S103 shown in FIG. 3, and stored in the memory 52. Storing corresponds to the imaging step. Further, as shown in steps S104 to S108 of FIG. 3, generating a three-dimensional image of the wire 30 from the captured two-dimensional image constitutes a three-dimensional image generation step, and is tertiary as shown in step S109 of FIG. Measuring the shape of the wire 30 based on the original image constitutes a measurement step. Further, inspecting the shape of the wire 30 based on the three-dimensional image as shown in step S109 of FIG. 3 constitutes an inspection step.
- the step of extracting the two-dimensional coordinates as in steps S104 to S106 of FIG. 3 constitutes a two-dimensional coordinate extraction step, and as shown in step S107 of FIG. 3, the three-dimensional coordinates are based on the extracted two-dimensional coordinates.
- the step of calculating the three-dimensional coordinates constitutes a three-dimensional coordinate calculation step, and the step of generating a three-dimensional image of the wire 30 from the three-dimensional coordinates calculated as shown in step S108 of FIG. 3 constitutes an image generation step.
- the camera captures a two-dimensional image of the semiconductor device 10 as shown in steps S102 and S103 of FIG. 3, and the memory 52. Storing in corresponds to the imaging step. Further, as shown in steps S104 to S108 of FIG. 3, generating a three-dimensional image of the wire 30 from the captured two-dimensional image constitutes a three-dimensional image generation step.
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Abstract
Description
Claims (14)
- 基板と、
前記基板に取付けられた半導体素子と、
前記半導体素子の電極と前記基板の電極、又は、前記半導体素子の一の電極と前記半導体素子の他の電極とを接続するワイヤと、を備える半導体装置のワイヤ形状測定装置であって、
前記半導体装置の二次元画像を撮像する複数のカメラと、
各前記カメラが取得した前記半導体装置の各二次元画像に基づいて前記ワイヤの形状測定を行う制御部と、を備え、
前記制御部は、
前記ワイヤの前記基板又は前記半導体素子への接続位置情報と、前記ワイヤの太さ情報とを用いたパターンマッチングにより、各前記カメラが取得した前記半導体装置の各二次元画像から前記ワイヤの三次元画像を生成し、
生成した前記ワイヤの三次元画像に基づいて前記ワイヤの形状測定を行うこと、
を特徴とするワイヤ形状測定装置。 - 請求項1に記載のワイヤ形状測定装置であって、
前記制御部は、
前記ワイヤの前記基板又は前記半導体素子への接続位置情報と、前記ワイヤの太さ情報とを用いて、各前記カメラが取得した前記半導体装置の各二次元画像の中から前記ワイヤの一の部位に対応する各二次元画像中の各点の各二次元座標をそれぞれ抽出し、
抽出した各二次元座標を用いて前記ワイヤの一の部位の一の三次元座標を算出し、
算出した三次元座標に基づいて前記ワイヤの三次元画像を生成すること、
を特徴とするワイヤ形状測定装置。 - 請求項2に記載のワイヤ形状測定装置であって、
前記制御部は、
前記ワイヤの前記基板または前記半導体素子への接続位置情報と、前記ワイヤの太さ情報とを用いて、各前記カメラが取得した前記半導体装置の各二次元画像の中から前記ワイヤの一の部位に対応する各二次元画像中の各点の各二次元座標をそれぞれ抽出することを、前記ワイヤの始端から終端まで繰り返し行うことにより、前記ワイヤの複数の部位にそれぞれ対応する各二次元画像中の各点の各二次元座標を抽出し、
抽出した前記ワイヤの複数の部位にそれぞれ対応する各二次元画像中の各二次元座標を用いて前記ワイヤの複数の部位の各三次元座標を算出し、
算出した前記ワイヤの複数の部位の各三次元座標に基づいて前記ワイヤの始端から終端までの三次元画像を生成すること、
を特徴とするワイヤ形状測定装置。 - 請求項1から3のいずれか1項に記載のワイヤ形状測定装置であって、
前記カメラは、
光軸が前記ワイヤの延びる方向と交差するように前記ワイヤの両側にそれぞれ配置されていること、
を特徴とするワイヤ形状測定装置。 - 請求項1から3のいずれか1項に記載のワイヤ形状測定装置であって、
前記制御部は、生成した前記ワイヤの三次元画像に基づいて前記ワイヤの形状検査を行うこと、
を特徴とするワイヤ形状測定装置。 - 請求項5に記載のワイヤ形状測定装置であって、
前記制御部は、
生成した前記ワイヤの三次元画像を前記ワイヤの基準形状と比較することにより前記ワイヤの形状検査を行うこと、
を特徴とするワイヤ形状測定装置。 - 請求項6に記載のワイヤ形状測定装置であって、
前記制御部は、
生成した前記ワイヤの三次元画像から前記ワイヤの形状パラメータを抽出し、
抽出した前記形状パラメータを前記形状パラメータの基準値と比較することにより前記ワイヤの形状検査を行うこと、
を特徴とするワイヤ形状測定装置。 - 基板と、
前記基板に取付けられた半導体素子と、
前記半導体素子の電極と前記基板の電極、又は、前記半導体素子の一の電極と前記半導体素子の他の電極とを接続するワイヤと、を備える半導体装置のワイヤ三次元画像生成方法であって、
複数のカメラで前記半導体装置の二次元画像をそれぞれ撮像する撮像ステップと、
前記ワイヤの前記基板または前記半導体素子への接続位置情報と、前記ワイヤの太さ情報とを用いたパターンマッチングにより、各前記カメラが取得した前記半導体装置の各二次元画像から前記ワイヤの三次元画像を生成する三次元画像生成ステップと、を含むこと、
を特徴とするワイヤ三次元画像生成方法。 - 請求項8に記載のワイヤ三次元画像生成方法であって、
前記三次元画像生成ステップは、
前記ワイヤの前記基板又は前記半導体素子への接続位置情報と、前記ワイヤの太さ情報とを用いて、各前記カメラが取得した前記半導体装置の各二次元画像の中から前記ワイヤの一の部位に対応する各二次元画像中の各点の各二次元座標をそれぞれ抽出する二次元座標抽出ステップと、
抽出した各二次元座標を用いて前記ワイヤの一の部位の一の三次元座標を算出する三次元座標算出ステップと、
算出した三次元座標に基づいて前記ワイヤの三次元画像を生成する画像生成ステップと、を含むこと、
を特徴とするワイヤ三次元画像生成方法。 - 請求項9に記載のワイヤ三次元画像生成方法であって、
前記二次元座標抽出ステップは、
前記ワイヤの前記基板または前記半導体素子への接続位置情報と、前記ワイヤの太さ情報とを用いて、各前記カメラが取得した前記半導体装置の各二次元画像の中から前記ワイヤの一の部位に対応する各二次元画像中の各点の各二次元座標をそれぞれ抽出することを、前記ワイヤの始端から終端まで繰り返し行うことにより、前記ワイヤの複数の部位にそれぞれ対応する各二次元画像中の各点の各二次元座標を抽出し、
前記三次元座標算出ステップは、
抽出した前記ワイヤの複数の部位にそれぞれ対応する各二次元画像中の各二次元座標を用いて前記ワイヤの複数の部位の各三次元座標を算出し、
前記画像生成ステップは、
算出した前記ワイヤの複数の部位の各三次元座標に基づいて前記ワイヤの始端から終端までの三次元画像を生成すること、
を特徴とするワイヤ三次元画像生成方法。 - 基板と、
前記基板に取付けられた半導体素子と、
前記半導体素子の電極と前記基板の電極、又は、前記半導体素子の一の電極と前記半導体素子の他の電極とを接続するワイヤと、を備える半導体装置のワイヤ形状測定方法であって、
複数のカメラで前記半導体装置の二次元画像をそれぞれ撮像する撮像ステップと、
前記ワイヤの前記基板または前記半導体素子への接続位置情報と、前記ワイヤの太さ情報とを用いたパターンマッチングにより、各前記カメラが取得した前記半導体装置の各二次元画像から前記ワイヤの三次元画像を生成する三次元画像生成ステップと、
生成した前記ワイヤの三次元画像に基づいて前記ワイヤの形状測定を行う測定ステップと、を含むこと、
を特徴とするワイヤ形状測定方法。 - 請求項11に記載のワイヤ形状測定方法であって、
生成した前記ワイヤの三次元画像に基づいて前記ワイヤの形状検査を行う検査ステップを含むこと、
を特徴とするワイヤ形状測定方法。 - 請求項12に記載のワイヤ形状測定方法であって、
前記検査ステップは、
生成した前記ワイヤの三次元画像を前記ワイヤの基準形状と比較することにより前記ワイヤの形状検査を行うこと、
を特徴とするワイヤ形状測定方法。 - 請求項13に記載のワイヤ形状測定方法であって、
前記検査ステップは、
生成した前記ワイヤの前記三次元画像から前記ワイヤの形状パラメータを抽出し、抽出した前記形状パラメータを前記形状パラメータの基準値と比較することにより前記ワイヤの形状検査を行うこと、
を特徴とするワイヤ形状測定方法。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06323822A (ja) * | 1993-05-17 | 1994-11-25 | Toshiba Corp | ボンディングワイヤ形状認識方法 |
JPH1054709A (ja) * | 1996-08-09 | 1998-02-24 | Techno Horon:Kk | 顕微鏡を用いた3次元画像認識装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03235009A (ja) | 1990-02-09 | 1991-10-21 | Babcock Hitachi Kk | 画像処理による形状測定方法 |
JPH0750329A (ja) * | 1992-06-24 | 1995-02-21 | Nippon Steel Corp | 半導体用ボンディングワイヤの形状測定方法および装置 |
JP3235009B2 (ja) * | 1994-09-09 | 2001-12-04 | 株式会社新川 | ボンディングワイヤ検査方法 |
JPH10112469A (ja) * | 1996-10-03 | 1998-04-28 | Canon Inc | ワイヤボンディング検査装置 |
JP3525896B2 (ja) * | 1999-03-19 | 2004-05-10 | 松下電工株式会社 | 3次元物体認識方法および同方法を使用したビンピッキングシステム |
JP2001264033A (ja) * | 2000-03-17 | 2001-09-26 | Sony Corp | 三次元形状計測装置とその方法、三次元モデリング装置とその方法、およびプログラム提供媒体 |
JP2001324313A (ja) * | 2000-05-16 | 2001-11-22 | Koichi Nakano | 三次元形状計測装置 |
JP4573085B2 (ja) * | 2001-08-10 | 2010-11-04 | 日本電気株式会社 | 位置姿勢認識装置とその位置姿勢認識方法、及び位置姿勢認識プログラム |
JP3933060B2 (ja) * | 2003-02-26 | 2007-06-20 | トヨタ自動車株式会社 | ボンディングワイヤ検査方法 |
JP4748648B2 (ja) * | 2005-03-31 | 2011-08-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2009031150A (ja) * | 2007-07-27 | 2009-02-12 | Omron Corp | 三次元形状計測装置、三次元形状計測方法、三次元形状計測プログラム、および記録媒体 |
JP5136108B2 (ja) * | 2008-02-18 | 2013-02-06 | トヨタ自動車株式会社 | 三次元形状計測方法および三次元形状計測装置 |
JP5494267B2 (ja) * | 2010-06-15 | 2014-05-14 | セイコーエプソン株式会社 | 三次元形状計測装置、三次元形状計測装置のキャリブレーション方法、およびロボット装置 |
JP5615604B2 (ja) * | 2010-06-30 | 2014-10-29 | 第一実業ビスウィル株式会社 | チップled検査装置 |
KR20120005341A (ko) * | 2010-07-08 | 2012-01-16 | 주식회사 하이닉스반도체 | 반도체 칩 및 패키지 |
JP2012134298A (ja) * | 2010-12-21 | 2012-07-12 | Renesas Electronics Corp | 検査装置、検査方法及びプログラム |
JP2013122434A (ja) * | 2011-12-12 | 2013-06-20 | Itt:Kk | レーザーを用いた単眼カメラによる3次元形状位置計測装置,3次元形状位置計測処理方法および3次元形状位置計測処理プログラム |
TWI557407B (zh) * | 2014-03-05 | 2016-11-11 | 晶元光電股份有限公司 | 晶粒檢測方法 |
-
2020
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06323822A (ja) * | 1993-05-17 | 1994-11-25 | Toshiba Corp | ボンディングワイヤ形状認識方法 |
JPH1054709A (ja) * | 1996-08-09 | 1998-02-24 | Techno Horon:Kk | 顕微鏡を用いた3次元画像認識装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7450245B2 (ja) | 2020-01-29 | 2024-03-15 | ヤマハロボティクスホールディングス株式会社 | 三次元画像生成装置及び三次元画像生成方法 |
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