WO2020066488A1 - 接続電極および接続電極の製造方法 - Google Patents

接続電極および接続電極の製造方法 Download PDF

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Publication number
WO2020066488A1
WO2020066488A1 PCT/JP2019/034537 JP2019034537W WO2020066488A1 WO 2020066488 A1 WO2020066488 A1 WO 2020066488A1 JP 2019034537 W JP2019034537 W JP 2019034537W WO 2020066488 A1 WO2020066488 A1 WO 2020066488A1
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Prior art keywords
metal film
region
mixed layer
metal
electrode
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PCT/JP2019/034537
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English (en)
French (fr)
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坂井　亮介
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株式会社村田製作所
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Priority to CN201980062857.7A priority Critical patent/CN112823411B/zh
Priority to KR1020217008828A priority patent/KR102550329B1/ko
Publication of WO2020066488A1 publication Critical patent/WO2020066488A1/ja
Priority to US17/203,847 priority patent/US11508682B2/en

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Definitions

  • the present invention relates to a structure of a connection electrode of an electronic component and a method of manufacturing the same.
  • Patent Document 1 describes a structure of a connection electrode of an elastic wave device.
  • an electrode land is formed on a substrate, and a metal film is formed on the electrode land. Further, an under bump metal is formed on the metal film.
  • another metal film may be formed on the metal film (first metal film) of Patent Document 1, and an under bump metal may be formed on the second metal film. It is possible. In such a configuration in which a plurality of metal films are stacked, various effects that are not easily realized by a configuration in which only one metal film is formed may be obtained.
  • the surface of the first metal film may be oxidized.
  • the electrical resistance increases at the junction between the first metal film and the second metal film. For this reason, the electrical resistance as the connection electrode increases, and the electrical characteristics deteriorate.
  • connection electrode having a structure in which a plurality of metal films are stacked, in which a decrease in electrical characteristics can be suppressed, and a method for manufacturing the same.
  • the connection electrode of the present invention includes a first metal film, a second metal film, an extraction electrode, and a mixed layer.
  • the first metal film is formed on a main surface of the wiring electrode.
  • the second metal film is formed on a surface of the first metal film opposite to a surface in contact with the wiring electrode.
  • the extraction electrode is formed on the surface of the second metal film opposite to the surface in contact with the first metal film.
  • the mixed layer is a layer in which the first metal particles forming the first metal film and the second metal particles forming the second metal film are mixed. When viewed in the first direction in which the first metal film, the second metal film, and the extraction electrode are arranged, at least a part of the mixed layer is formed in a first region overlapping a bonding surface between the extraction electrode and the second metal film. .
  • the mixed layer of the first metal particles and the second metal particles is formed on the first metal film and the second metal film, so that the resistivity immediately below the extraction electrode is reduced. Thereby, the resistance of the path connected to the extraction electrode from the wiring electrode via the first metal film and the second metal film is reduced.
  • connection electrode having a structure in which a plurality of metal films are stacked, a decrease in electrical characteristics can be suppressed.
  • FIG. 1 is a side sectional view showing the configuration of the connection electrode according to the embodiment of the present invention.
  • FIG. 2 is an enlarged side sectional view of a part of the connection electrode.
  • FIG. 3 is a diagram schematically showing a mixed state of metal particles P40 and P50.
  • FIG. 4 is a flowchart illustrating a method for manufacturing a connection electrode according to the embodiment of the present invention.
  • 5 (A), 5 (B), and 5 (C) are views showing each state in the process of manufacturing the connection electrode.
  • FIG. 6 is a side sectional view showing an example of a derivative of the configuration of the connection electrode according to the embodiment of the present invention.
  • FIG. 1 is a side sectional view showing the configuration of the connection electrode according to the embodiment of the present invention.
  • FIG. 2 is an enlarged side sectional view of a part of the connection electrode.
  • an electronic component 10 having connection electrodes includes a substrate 20, a wiring electrode 30, a metal film 40, a metal film 50, a support frame 60, a cover layer 70, and an under bump metal 80. (Hereinafter, referred to as UBM 80), and solder balls 81.
  • the portion including the metal film 40, the metal film 50, and the UBM 80 corresponds to the “connection electrode” of the present invention.
  • the substrate 20 is, for example, a flat plate and has a planar main surface 201. Although not shown, when the substrate 20 is a flat plate, the substrate 20 has another main surface facing the main surface 201.
  • the substrate 20 is realized by, for example, a piezoelectric substrate, a semiconductor substrate, or an insulating substrate.
  • a piezoelectric substrate for example, an IDT electrode or the like is formed on the piezoelectric substrate.
  • the substrate 20 is a semiconductor substrate, for example, a diode, a transistor, an FET, and the like are formed on the semiconductor substrate.
  • the substrate 20 is an insulating substrate, for example, a conductive pattern that realizes a predetermined electric circuit is formed on the insulating substrate.
  • the wiring electrode 30 is formed on the main surface 201 of the substrate 20.
  • the wiring electrode 30 has a flat film shape, and has a main surface 301 and a main surface 302 facing each other.
  • the main surface 301 is in contact with the main surface 201 of the substrate 20.
  • the main surface 302 is the surface of the wiring electrode 30 opposite to the surface in contact with the substrate 20.
  • the wiring electrode 30 is formed of a material having a relatively low resistivity, such as aluminum (Al) or copper (Cu).
  • a metal having a relatively low resistivity means, for example, a metal belonging to a low resistivity class among various metals. That is, based on the specifications of the electronic component 10, the wiring electrode 30 may have any resistivity within a practical range.
  • the resistivity of the wiring electrode 30 is preferably lower than the resistivity of the metal film 40 and the resistivity of the metal film 50. Thereby, the wiring resistance with respect to the substrate 20 can be reduced, and the electrical characteristics of the electronic component 10 can be improved.
  • the wiring electrode 30 is preferably formed of a material that can be easily processed. Then, aluminum (Al), copper (Cu), or the like constituting the wiring electrode 30 corresponds to the “third metal particle” of the present invention.
  • the wiring electrode 30 is connected to an electrode such as an IDT electrode, a conductor pattern, or the like, for example, via a wiring not shown in FIG.
  • the metal film 40 is formed on the main surface 302 of the wiring electrode 30.
  • the metal film 40 has a flat film shape, and has a main surface 401 and a main surface 402 facing each other.
  • the main surface 401 is in contact with the main surface 302 of the wiring electrode 30.
  • the main surface 402 is the surface of the metal film 40 opposite to the surface that contacts the wiring electrode 30.
  • the metal film 40 is formed by vapor deposition, plating, sputtering, or the like.
  • the thickness of the metal film 40 (the length in the first direction in FIGS. 1 and 2) is smaller than the thickness of the wiring electrode 30.
  • the metal film 40 is formed of titanium (Ti), nickel (Ni), chromium (Cr), or the like.
  • the metal film 40 is a film for improving the adhesion between the so-called wiring electrode 30 and the metal film 50, and the material of the metal film 40 depends on the material of the wiring electrode 30 and the material of the metal film 50. It has been appropriately selected.
  • the metal film 40 corresponds to the “first metal film” of the present invention.
  • titanium (Ti), nickel (Ni), chromium (Cr), and the like forming the metal film 40 correspond to the “first metal particles” of the present invention.
  • the metal film 50 is formed on the main surface 402 of the metal film 40.
  • the metal film 50 is flat and has a main surface 501 and a main surface 502 facing each other.
  • the main surface 501 is in contact with the main surface 402 of the metal film 40.
  • the main surface 502 is a surface of the metal film 50 opposite to the surface in contact with the metal film 40.
  • the metal film 50 is formed by vapor deposition, plating, sputtering, or the like.
  • the thickness of the metal film 50 (the length in the first direction in FIGS. 1 and 2) is smaller than the thickness of the wiring electrode 30.
  • the metal film 50 is formed of platinum (Pt), gold (Au), or the like.
  • the metal film 50 is a film in which oxidation hardly occurs. It should be noted that a metal that is relatively unlikely to oxidize means, for example, a metal that falls into a class that is hardly oxidized among various metals. In other words, based on the specifications of the electronic component 10, it is only necessary that the electronic component 10 has a practical range of difficulty in performing oxidation as a function of the metal film 50.
  • the metal film 50 corresponds to the “second metal film” of the present invention. Platinum (Pt), gold (Au), and the like that form the metal film 50 correspond to the “second metal particles” of the present invention. Thereby, oxidation of the surface of the metal film 50 at the time of forming the UBM 80 described later can be suppressed.
  • the support frame 60 is formed on the main surface 502 of the metal film 50.
  • the support frame 60 is columnar.
  • the support frame 60 is formed of, for example, an insulating ceramic such as silicon oxide (SiO 2 ) or aluminum oxide (Al 2 O 3 ), or a synthetic resin such as polyimide or epoxy.
  • the cover layer 70 is formed on the surface of the support frame 60 opposite to the surface in contact with the metal film 50.
  • the cover layer 70 has, for example, a shape that covers substantially the entire surface of the electronic component 10 on the side where the wiring electrode 30, the metal film 40, and the metal film 50 are formed.
  • the cover layer 70 is made of, for example, an insulating ceramic such as aluminum oxide (Al 2 O 3 ), a synthetic resin such as polyimide or epoxy, a piezoelectric material such as lithium tantalate (LiTaO 3 ), lithium niobate (LiNbO 3 ), Alternatively, it is formed of a semiconductor material such as silicon (Si).
  • a through-hole 800 is formed in the support frame 60 and the cover layer 70 so as to penetrate them in the thickness direction (the first direction in FIG. 1).
  • the bottom of the through hole 800 is realized by the metal film 50.
  • the UBM 80 is formed in the through hole 800.
  • the UBM 80 is made of, for example, nickel (Ni) or copper (Cu).
  • the UBM 80 is connected to the metal film 50 at the bottom of the through hole 800. At least a part of the UBM 80 is formed inside the support frame 60.
  • the UBM 80 corresponds to the “extraction electrode” of the present invention.
  • Solder balls 81 are formed on the surface of the UBM 80.
  • a mixed layer 45 is formed on the metal film 40 and the metal film 50.
  • the mixed layer 45 is a layer in which the metal particles P40 forming the metal film 40 and the metal particles P50 forming the metal film 50 are mixed.
  • the mixed layer 45 satisfies the following conditions.
  • FIG. 3 is a diagram schematically showing a mixed state of metal particles.
  • the mixed layer 45 is such that the mixing ratio of the metal particles P40 forming the metal film 40 and the metal particles P50 forming the metal film 50 is different from that of the normal metal film 40.
  • the layer is larger than the mixing ratio of the metal particles P40 and the metal particles P50 near the bonding interface with the metal film 50.
  • the mixing ratio is represented by the mixing ratio (diffusion rate) of the metal particles P40 in a unit volume near the interface in the metal film 50.
  • the mixing ratio is represented by the mixing ratio (diffusion rate) of the metal particles P50 in a unit volume near the interface in the metal film 40.
  • the mixing ratio is high in the first region Re1 overlapping the bonding surface between the UBM 80 and the metal film 50 when viewed in the first direction. Further, among the regions that do not overlap with the bonding surface between the UBM 80 and the metal film 50, in the second region Re2, the mixture ratio is higher as approaching the first region Re1 and lower as approaching the third region Re3. Further, among the regions that do not overlap with the bonding surface between the UBM 80 and the metal film 50, the second region Re2 when viewed in the second direction (the direction parallel to the contact surface between the metal film 40 and the metal film 50) in FIG. In the third region Re3 opposite to the first region Re1 with respect to, the mixture ratio is low and substantially constant.
  • the first region Re1 and the mixed layer 45 overlap. That is, at least a part of the mixed layer 45 is formed in the first region Re1.
  • the mixed layer 45 exists immediately below the UBM 80, that is, in a current transmission path (main transmission path) connected from the UBM 80 to the wiring electrode 30 via the metal film 50 and the metal film 40. Since the mixed layer 45 is in a so-called metal diffusion state, the resistivity is low. Therefore, the electrical resistance of a portion connected from UBM 80 to wiring electrode 30 via metal film 50 and metal film 40 is reduced. Thereby, for example, even if the main surface 402 of the metal film 40 is oxidized in the manufacturing process of the electronic component 10 and the electric resistance of the connection electrode increases, the electric resistance of the connection electrode is reduced by the mixed layer 45. Thus, a decrease in the electrical characteristics of the electronic component 10 can be suppressed.
  • the third region Re3 and the mixed layer 45 do not overlap.
  • the mixing ratio of the metal particles P40 and the metal particles P50 in the third region Re3 is a constant value far lower than the mixing ratio of the metal particles P40 and the metal particles P50 in the first region Re1. That is, the mixed layer 45 is not formed in the third region Re3.
  • This constant value is the “mixture ratio of the metal particles P40 and the metal particles P50 near the joint interface between the normal metal film 40 and the metal film 50”. Therefore, since the mixed layer 45 is not formed in the third region Re3, which is the outer edge of the connection electrode, a decrease in the bonding strength between the metal film 40 and the metal film 50 can be suppressed.
  • the mixed layer 45 may be formed in a part of the second region Re2.
  • the mixing ratio in the second region Re2, particularly in a region near the first region Re1 is higher than the mixing ratio in the third region Re3, and is higher than the mixing ratio in the first region Re1.
  • the mixed layer 45 is formed in a part of the second region Re2.
  • the region where the mixed layer 45 is formed in the second region Re2 is preferably smaller than the region where the mixed layer 45 is formed in the first region Re1.
  • the region where the mixed layer 45 is formed is a three-dimensional region even if it is a planar region (area) as long as the comparison target is the same in the first region Re1 and the second region Re2. Region (volume). Also in this case, since the region where the mixed layer 45 is formed is smaller than the region where the mixed layer 45 is not formed, a decrease in the bonding strength between the metal film 40 and the metal film 50 can be suppressed.
  • the mixed layer 45 is formed continuously so as to straddle the first region Re1 and the second region Re2. In this case, since a region where the resistance is low is continuously present in the current transmission path, a decrease in electrical characteristics can be suppressed.
  • the mixed layer 45 may not be formed at all in the second region Re2. That is, the mixture ratio of the second region Re2 may be maintained at a value substantially equal to the mixture ratio of the third region Re3. In this case, since the region where the mixed layer 45 is formed in the metal film 40 and the metal film 50 is limited to only the first region Re1 which is the center of the connection electrode, the bonding strength between the metal film 40 and the metal film 50 is reduced. The decrease can be further suppressed.
  • the second region Re2 is a region that overlaps with the support frame 60 in a region that does not overlap with the bonding surface between the UBM 80 and the metal film 50 when viewed in the first direction of FIG.
  • the third region Re3 may be a region that overlaps with the support frame 60 in a region that does not overlap with the bonding surface between the UBM 80 and the metal film 50.
  • the mixed layer 45 is formed by locally heating the metal film 40 and the metal film 50. For example, as will be described later with reference to FIGS. 4, 5A, 5B, and 5C, laser light is applied to a through hole in which the UBM 80 is formed. The layer 45 is formed on the metal films 40 and 50.
  • the region overlapping with the support frame 60 including at least a part of the UBM 80 in the first direction is relatively close to the region heated by the laser beam. In the distance. Therefore, the mixed layer is easily formed under the influence of heating by the laser beam. Therefore, if the region where the mixed layer is easily formed is the second region Re2, a connection electrode exhibiting the effects of the present invention can be more easily obtained.
  • the region that does not overlap with the support frame 60 is relatively far away from the region that is heated by the laser light, and thus is not easily affected by heating by the laser light. Therefore, if the region in which the mixed layer is not easily formed is the third region Re3, a connection electrode exhibiting the effects of the present invention can be more easily obtained.
  • the mixed layer 45 does not reach the main surface 502 of the metal film 50. Since the metal film 50 is a film that is hardly oxidized as described above, an increase in resistivity due to oxidation during the manufacturing process hardly occurs. Therefore, even if the mixed layer 45 does not reach the main surface 502 of the metal film 50, the electrical resistance of the portion connected from the UBM 80 to the wiring electrode 30 via the metal film 50 and the metal film 40 does not easily increase. Furthermore, since the mixed layer 45 does not exist on the main surface 502 of the metal film 50, that is, the bonding surface between the metal film 50 and the UBM 80, a decrease in the bonding strength between the metal film 50 and the UBM 80 can be suppressed. Thereby, the reliability of bonding between the metal film 50 and the UBM 80 is improved.
  • the mixed layer 45 preferably does not reach the main surface 401 of the metal film 40. That is, it is preferable that the mixed layer 45 does not exist on the joint surface between the metal film 40 and the wiring electrode 30. Thereby, a decrease in the bonding strength between the metal film 40 and the wiring electrode 30 can be suppressed. Therefore, the reliability of bonding between the metal film 40 and the wiring electrode 30 is improved.
  • the mixed layer 45 may reach the wiring electrode 30.
  • the electrical resistance of the portion connected from the UBM 80 to the wiring electrode 30 via the metal film 50 and the metal film 40 is reduced, and the electrical characteristics of the electronic component 10 can be improved.
  • it is preferable that the mixed layer 45 does not exist in a region overlapping with the above-described second region Re2 at the bonding interface between the metal film 40 and the wiring electrode 30. According to this configuration, a decrease in the bonding strength between the wiring electrode 30 and the metal film 40 can be suppressed.
  • connection electrode of the electronic component 10 can be manufactured by the following method.
  • FIG. 4 is a flowchart illustrating a method for manufacturing a connection electrode according to the embodiment of the present invention.
  • 5 (A), 5 (B), and 5 (C) are views showing each state in the process of manufacturing the connection electrode.
  • the manufacturing method will be described with reference to the flowchart of FIG.
  • the metal film 40 is formed on the main surface 302 of the wiring electrode 30 by using evaporation, plating, sputtering, or the like (S11).
  • the metal film 50 is formed on the main surface 402 of the metal film 40 using vapor deposition, plating, sputtering, or the like (S12).
  • the support frame 60 which is an insulating layer is formed on the main surface 502 of the metal film 50, and further, the cover layer 70 is formed (S13).
  • the laser 900 irradiates a laser beam toward the metal film 50 to locally heat the vicinity of the contact surface between the metal film 50 and the metal film 40.
  • the energy of the laser beam at this time is set so that the temperature near the contact surface between the metal film 50 and the metal film 40 is set to a predetermined temperature.
  • the energy for local heating can be the same as the energy for forming the through hole 800 described above.
  • the mixed layer 45 is formed so as to include the contact surface between the metal film 50 and the metal film 40 (S15).
  • the mixed layer 45 is a layer in which the metal particles P50 of the metal film 50 and the metal particles P40 of the metal film 40 are mixed more than a normal stacked state of the metal film 50 and the metal film 40. .
  • the UBM 80 is formed in the through hole 800 (S16).
  • the laser used for forming the through hole 800 for the UBM 80 can be used for forming the mixed layer 45. Therefore, the manufacturing process can be simplified. In particular, by making the energy for local heating the same as the energy for forming the through hole 800, the manufacturing process can be further simplified.
  • FIGS. 1 to 3 show the electronic component 10 in which two metal films are stacked on the wiring electrode
  • the number of metal films stacked on the wiring electrode is not limited to two, and may be three or more. May be.
  • the metal film closest to the extraction electrode for example, the above-described UBM 80
  • the electrical resistance is reduced and the electrical characteristics are reduced. The effect that deterioration can be suppressed is obtained.
  • FIG. 6 is a side sectional view showing an example of a derivative of the configuration of the connection electrode according to the embodiment of the present invention.
  • the metal film 50 is formed on the main surface 302 of the wiring electrode 30. That is, the main surface 501 of the metal film 50 is in contact with the main surface 302 of the wiring electrode 30.
  • the mixed layer 35 is formed on the metal film 50 and the wiring electrode 30. At this time, the mixed layer 35 is formed including the bonding interface between the metal film 50 and the wiring electrode 30.
  • the mixed layer 35 is a layer in which metal particles forming the wiring electrode 30 (corresponding to the “third metal particles” of the present invention) and metal particles forming the metal film 50 are mixed. The conditions are the same as the case where the metal particles of the metal film 40 under the above-described conditions of the mixed layer 45 are replaced with the metal particles of the wiring electrode 30.
  • the mixed layer 35 overlaps the first region Re1. More specifically, at least a part of the mixed layer 35 is formed in the first region Re1 overlapping the bonding surface between the UBM 80 and the metal film 50.
  • the formation of the mixed layer 35 between the wiring electrode 30 and the metal film 50 has the effect of reducing the electrical resistance and suppressing the deterioration of the electrical characteristics.

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Abstract

接続電極は、金属膜（４０）、金属膜（５０）、混在層（４５）、および、ＵＢＭ（８０）を備える。金属膜（５０）は、金属膜（４０）上に形成され、ＵＢＭ（８０）は、金属膜（５０）上に形成されている。混在層（４５）は、金属膜（４０）を形成する金属粒子（Ｐ４０）と、金属膜（５０）を形成する金属粒子（Ｐ５０）と、が混在する層である。金属膜（４０）、および、金属膜（５０）が並ぶ第１方向に視て、混在層（４５）の少なくとも一部は、ＵＢＭ（８０）と金属膜（５０）との接合面に重なる第１領域（Ｒｅ１）に形成されている。

Description

接続電極および接続電極の製造方法
　本発明は、電子部品の接続電極の構造およびその製造方法に関する。
　特許文献１には、弾性波装置の接続電極の構造が記載されている。特許文献１の接続電極の構造では、電極ランドが基板上に形成され、金属膜が電極ランド上に形成されている。さらに、金属膜上にアンダーバンプメタルが形成されている。
特許第５５１０６９５号公報
　ここで、特許文献１の金属膜（第１の金属膜）上にさらに別の金属膜（第２の金属膜）を形成して、第２の金属膜上にアンダーバンプメタルを形成することも可能である。このように複数の金属膜を積層する構成では、金属膜を１層だけ形成する構成では実現が容易ではない種々の効果が得られることがある。
　しかしながら、複数の金属膜を積層する構成では、第１の金属膜の表面が酸化してしまうことがある。この場合、第１の金属膜と第２の金属膜との接合部において電気抵抗が大きくなる。このため、接続電極としての電気抵抗が大きくなり、電気的な特性が低下してしまう。
　したがって、本発明の目的は、複数の金属膜を積層した構造の接続電極において、電気的な特性の低下を抑制できる構造およびその製造方法を提供することにある。
　この発明の接続電極は、第１金属膜、第２金属膜、取出し電極、および、混在層を備える。第１金属膜は、配線電極の主面に形成されている。第２金属膜は、第１金属膜における配線電極への当接面と反対側の面に形成されている。取出し電極は、第２金属膜における第１金属膜への当接面と反対側の面に形成されている。混在層は、第１金属膜を形成する第１金属粒子と、第２金属膜を形成する第２金属粒子と、が混在する層である。第１金属膜、第２金属膜および取出し電極が並ぶ第１方向に視て、混在層の少なくとも一部は、取出し電極と第２金属膜との接合面に重なる第１領域に形成されている。
　この構成では、第１金属膜と第２金属膜とに、第１金属粒子と第２金属粒子との混在層が形成されることによって、取出し電極の直下の部分での抵抗率が低下する。これにより、配線電極から、第１金属膜および第２金属膜を介して取出し電極に接続される経路の抵抗が低下する。
　この発明によれば、複数の金属膜を積層した構造の接続電極において、電気的な特性の低下を抑制できる。
図１は本発明の実施形態に係る接続電極の構成を示す側面断面図である。 図２は接続電極の一部を拡大した側面断面図である。 図３は金属粒子Ｐ４０，Ｐ５０の混在状態を模式的に示す図である。 図４は本発明の実施形態に係る接続電極の製造方法を示すフローチャートである。 図５（Ａ）、図５（Ｂ）、図５（Ｃ）は、接続電極の製造過程の各状態を示す図である。 図６は本発明の実施形態に係る接続電極の構成の派生例の一例を示す側面断面図である。
　本発明の実施形態に係る接続電極および接続電極の製造方法について、図を参照して説明する。図１は、本発明の実施形態に係る接続電極の構成を示す側面断面図である。図２は、接続電極の一部を拡大した側面断面図である。
　図１、図２に示すように、本実施形態の接続電極を有する電子部品１０は、基板２０、配線電極３０、金属膜４０、金属膜５０、支持枠６０、カバー層７０、アンダーバンプメタル８０（以下、ＵＢＭ８０と称する。）、および、はんだボール８１を備える。金属膜４０、金属膜５０、および、ＵＢＭ８０からなる部分が、本発明の「接続電極」に対応する。
　基板２０は、例えば、平板であり、平面状の主面２０１を有する。なお、図示していないが、基板２０が平板の場合、基板２０は、主面２０１に対向する別の主面を有する。基板２０は、例えば、圧電基板、半導体基板、または、絶縁性基板によって実現される。基板２０が圧電基板の場合、圧電基板には、例えば、ＩＤＴ電極等が形成されている。基板２０が半導体基板の場合、半導体基板には、例えば、ダイオード、トランジスタ、ＦＥＴ等が形成されている。基板２０が絶縁性基板の場合、絶縁性基板には、例えば、所定の電気回路を実現する導体パターンが形成されている。
　配線電極３０は、基板２０の主面２０１に形成されている。配線電極３０は、平膜状であり、互いに対向する主面３０１と主面３０２とを有する。主面３０１は、基板２０の主面２０１に当接している。主面３０２は、配線電極３０における基板２０に当接する面と反対側の面である。
　配線電極３０は、アルミニウム（Ａｌ）、または、銅（Ｃｕ）等、抵抗率が比較的低い材料によって形成されている。なお、抵抗率が比較的低い金属とは、例えば、各種の金属において抵抗率が低い部類に入る金属を意味する。すなわち、電子部品１０の仕様に基づいて、配線電極３０として、実用的な範囲の抵抗率であればよい。配線電極３０の抵抗率は、金属膜４０の抵抗率および金属膜５０の抵抗率よりも低いことが好ましい。これにより、基板２０に対する配線抵抗を低くでき、電子部品１０の電気的な特性を向上できる。なお、配線電極３０は、加工が容易な材料によって形成されていることが好ましい。そして、配線電極３０を構成する、アルミニウム（Ａｌ）、または、銅（Ｃｕ）等が、本発明の「第３金属粒子」に対応する。
　配線電極３０は、ＩＤＴ電極等の電極や導体パターン等に、例えば、図１に不図示の配線を介して接続している。
　金属膜４０は、配線電極３０の主面３０２に形成されている。金属膜４０は、平膜状であり、互いに対向する主面４０１と主面４０２とを有する。主面４０１は、配線電極３０の主面３０２に当接している。主面４０２は、金属膜４０における配線電極３０に当接する面と反対側の面である。
　金属膜４０は、蒸着、メッキ、スパッタリング等によって、形成されている。金属膜４０の厚み（図１、図２における第１方向の長さ）は、配線電極３０の厚みよりも小さい。
　金属膜４０は、チタン（Ｔｉ）、ニッケル（Ｎｉ）、クロム（Ｃｒ）等によって形成されている。金属膜４０は、所謂、配線電極３０と金属膜５０との間の密着性を向上させる膜であり、金属膜４０の材料は、配線電極３０の材料と金属膜５０の材料とに応じて、適宜選択されている。金属膜４０が、本発明の「第１金属膜」に対応する。そして、金属膜４０を形成する、チタン（Ｔｉ）、ニッケル（Ｎｉ）、クロム（Ｃｒ）等が、本発明の「第１金属粒子」に対応する。
　金属膜５０は、金属膜４０の主面４０２に形成されている。金属膜５０は、平膜状であり、互いに対向する主面５０１と主面５０２とを有する。主面５０１は、金属膜４０の主面４０２に当接している。主面５０２は、金属膜５０における金属膜４０に当接する面と反対側の面である。
　金属膜５０は、蒸着、メッキ、スパッタリング等によって、形成されている。金属膜５０の厚み（図１、図２における第１方向の長さ）は、配線電極３０の厚みよりも小さい。
　金属膜５０は、プラチナ（Ｐｔ）、金（Ａｕ）等によって形成されている。金属膜５０は、比較的酸化の生じ難い膜である。なお、比較的酸化の生じ難い金属とは、例えば、各種の金属において酸化し難い部類に入る金属を意味する。すなわち、電子部品１０の仕様に基づいて、金属膜５０としての機能を果たす上で実用的な範囲の酸化のし難さを有していればよい。金属膜５０が、本発明の「第２金属膜」に対応する。そして、金属膜５０を形成する、プラチナ（Ｐｔ）、金（Ａｕ）等が、本発明の「第２金属粒子」に対応する。これにより、後に示すＵＢＭ８０の形成時の金属膜５０の表面の酸化を抑制できる。
　支持枠６０は、金属膜５０の主面５０２に形成されている。支持枠６０は、柱状である。支持枠６０は、例えば、酸化ケイ素（ＳｉＯ２）、酸化アルミニウム（Ａｌ２Ｏ３）等の絶縁性セラミックス、または、ポリイミド、エポキシ等の合成樹脂によって形成されている。
　カバー層７０は、支持枠６０における金属膜５０に当接する面と反対側の面に形成されている。カバー層７０は、例えば、電子部品１０における配線電極３０、金属膜４０、金属膜５０が形成される側の略全面を覆う形状である。カバー層７０は、例えば、酸化アルミニウム（Ａｌ２Ｏ３）等の絶縁性セラミックス、ポリイミド、エポキシ等の合成樹脂、タンタル酸リチウム（ＬｉＴａＯ３）、ニオブ酸リチウム（ＬｉＮｂＯ３）等の圧電性材料、または、シリコン（Ｓｉ）等の半導体材料によって形成されている。
　支持枠６０およびカバー層７０には、これらを厚み方向（図１の第１方向）に貫通する貫通孔８００が形成されている。貫通孔８００の底は、金属膜５０によって実現されている。
　ＵＢＭ８０は、貫通孔８００に形成されている。ＵＢＭ８０は、例えば、ニッケル（Ｎｉ）や銅（Ｃｕ）によって形成されている。ＵＢＭ８０は、貫通孔８００の底において、金属膜５０に接続している。ＵＢＭ８０の少なくとも一部は、支持枠６０の内部に形成されている。ＵＢＭ８０が、本発明の「取出し電極」に対応する。
　ＵＢＭ８０の表面には、はんだボール８１が形成されている。
　このような構成において、図１、図２に示すように、金属膜４０および金属膜５０には、混在層４５が形成されている。混在層４５は、金属膜４０を形成する金属粒子Ｐ４０と、金属膜５０を形成する金属粒子Ｐ５０とが混在する層であり、例えば、次に示すような条件を満たす層である。
　図３は、金属粒子の混在状態を模式的に示す図である。図３に示すように、具体的には、混在層４５とは、金属膜４０を形成する金属粒子Ｐ４０と、金属膜５０を形成する金属粒子Ｐ５０との混在率が、通常の金属膜４０と金属膜５０との接合界面付近での金属粒子Ｐ４０と金属粒子Ｐ５０との混在率よりも多い層であることを意味する。より具体的には、混在率とは、金属膜５０内の界面付近の単位体積における金属粒子Ｐ４０の混在率（拡散率）によって表される。もしくは、混在率は、金属膜４０内の界面付近の単位体積における金属粒子Ｐ５０の混在率（拡散率）によって表される。
　図３に示すように、本実施形態の電子部品１０の接続電極では、第１方向に視て、ＵＢＭ８０と金属膜５０との接合面に重なる第１領域Ｒｅ１において、混在率は高い。また、ＵＢＭ８０と金属膜５０との接合面に重ならない領域のうち、第２領域Ｒｅ２において、混在率は、第１領域Ｒｅ１に近づくほど高く、第３領域Ｒｅ３に近づくほど低い。さらに、ＵＢＭ８０と金属膜５０との接合面に重ならない領域のうち、図１の第２方向（金属膜４０と金属膜５０との当接面に平行な方向）に視て、第２領域Ｒｅ２を挟んで第１領域Ｒｅ１と反対側にある第３領域Ｒｅ３において、混在率は低く、ほぼ一定である。
　したがって、図１、図２に示すように、本実施形態の電子部品１０の接続電極では、第１領域Ｒｅ１と混在層４５とが重なる。すなわち、混在層４５の少なくとも一部は第１領域Ｒｅ１に形成されている。
　この構成によって、ＵＢＭ８０の直下、すなわち、ＵＢＭ８０から金属膜５０および金属膜４０を介して配線電極３０に接続される電流の伝送経路（主たる伝送経路）には、混在層４５が存在する。混在層４５は、所謂、金属拡散の状態であるので、抵抗率が低くなる。したがって、ＵＢＭ８０から金属膜５０および金属膜４０を介して配線電極３０に接続される部分の電気抵抗は、低下する。これにより、例えば、電子部品１０の製造過程において、金属膜４０の主面４０２が酸化して、接続電極の電気抵抗が増大しても、混在層４５によって、接続電極の電気抵抗を低下させることができ、電子部品１０の電気的な特性の低下を抑制できる。
　一方、図３に示すように、第３領域Ｒｅ３と混在層４５とは、重ならない。具体的には、第３領域Ｒｅ３における金属粒子Ｐ４０と金属粒子Ｐ５０との混在率は、第１領域Ｒｅ１における金属粒子Ｐ４０と金属粒子Ｐ５０との混在率よりはるかに低い一定の値である。すなわち、混在層４５は、第３領域Ｒｅ３には形成されていない。なお、この一定の値が、「通常の金属膜４０と金属膜５０との接合界面付近での金属粒子Ｐ４０と金属粒子Ｐ５０との混在率」である。したがって、混在層４５が接続電極の外縁部である第３領域Ｒｅ３に形成されていないため、金属膜４０と金属膜５０との接合強度の低下を抑制できる。
　なお、第２領域Ｒｅ２の一部には、混在層４５が形成されていてもよい。例えば、図３に示す電子部品１０では、第２領域Ｒｅ２のうち特に第１領域Ｒｅ１に近い領域における混在率は、第３領域Ｒｅ３の混在率より高く、かつ、第１領域Ｒｅ１の混在率と同程度であり、これにより、第２領域Ｒｅ２の一部に混在層４５が形成されているといえる。この場合、第２領域Ｒｅ２において混在層４５が形成されている領域は、第１領域Ｒｅ１において混在層４５が形成されている領域より小さくなるほうが好ましい。なお、ここでの混在層４５が形成されている領域とは、第１領域Ｒｅ１と第２領域Ｒｅ２とで比較対象が同じであれば、平面的な領域（面積）であっても、立体的な領域（体積）であってもよい。この場合においても、混在層４５が形成されている領域は混在層４５が形成されていない領域よりも小さいことにより、金属膜４０と金属膜５０との接合強度の低下を抑制できる。
　このとき、混在層４５が第１領域Ｒｅ１と第２領域Ｒｅ２とを跨ぐように連続的に形成されていると、より好ましい。この場合は、電流の伝送経路に、抵抗の低くなる領域が連続的に存在するため、より電気的な特性の低下を抑制できる。
　なお、第２領域Ｒｅ２には、混在層４５が全く形成されていなくともよい。すなわち、第２領域Ｒｅ２の混在率は、第３領域Ｒｅ３の混在率と同程度の値に保たれていてもよい。この場合、金属膜４０および金属膜５０において混在層４５が形成される領域が接続電極の中心部である第１領域Ｒｅ１のみに限定されるため、金属膜４０と金属膜５０との接合強度の低下をより抑制できる。
　また、図１、図３に示すように、第２領域Ｒｅ２は、図１の第１方向に視て、ＵＢＭ８０と金属膜５０との接合面に重ならない領域のうち支持枠６０と重なる領域であり、第３領域Ｒｅ３は、ＵＢＭ８０と金属膜５０との接合面に重ならない領域のうち支持枠６０と重なる領域であってもよい。
　混在層４５は、金属膜４０および金属膜５０を局所的に加熱することで、形成される。例えば、図４、図５（Ａ）、図５（Ｂ）、図５（Ｃ）を用いて後述するように、ＵＢＭ８０が形成される貫通孔に対してレーザ光を照射すること等により、混在層４５は、金属膜４０および金属膜５０に形成される。
　このとき、金属膜４０および金属膜５０における領域のうち、第１方向に視て、ＵＢＭ８０の少なくとも一部を内部に備える支持枠６０と重なる領域は、レーザ光で加熱される領域と比較的近い距離にある。そのため、レーザ光による加熱の影響を受けて混在層が形成されやすい。したがって、混在層が形成されやすい当該領域を第２領域Ｒｅ２とすれば、本発明の効果を発揮する接続電極をより容易に得られる。
　一方、第１方向に視て、支持枠６０と重ならない領域はレーザ光で加熱される領域と比較的遠い距離にあるため、レーザ光による加熱の影響を受けにくい。したがって、混在層が形成されにくい当該領域を第３領域Ｒｅ３とすれば、本発明の効果を発揮する接続電極をより容易に得られる。
　また、図１、図２に示すように、混在層４５は、金属膜５０の主面５０２に達していないほうが好ましい。金属膜５０は、上述のように酸化し難い膜であるので、製造過程での酸化による抵抗率の上昇は生じ難い。したがって、混在層４５が金属膜５０の主面５０２に達していなくても、ＵＢＭ８０から金属膜５０および金属膜４０を介して配線電極３０に接続される部分の電気抵抗は、上昇しにくい。さらに、金属膜５０の主面５０２、すなわち、金属膜５０とＵＢＭ８０との接合面に混在層４５が存在しないことによって、金属膜５０とＵＢＭ８０との接合強度の低下を抑制できる。これにより、金属膜５０とＵＢＭ８０との接合の信頼性は、向上する。
　また、図１、図２に示すように、混在層４５は、金属膜４０の主面４０１に達していないほうが好ましい。すなわち、金属膜４０と配線電極３０との接合面に混在層４５が存在しないほうが好ましい。これにより、金属膜４０と配線電極３０との接合強度の低下を抑制できる。したがって、金属膜４０と配線電極３０との接合の信頼性は、向上する。
　なお、混在層４５は、配線電極３０まで達していてもよい。この場合、ＵＢＭ８０から金属膜５０および金属膜４０を介して配線電極３０に接続される部分の電気抵抗は低下し、電子部品１０の電気的な特性を向上できる。この際、金属膜４０と配線電極３０との接合界面における上述の第２領域Ｒｅ２と重なる領域では、混在層４５は、存在しないほうが好ましい。この構成によれば、配線電極３０と金属膜４０との接合強度の低下を抑制できる。
　また、上述の説明では、図１、図２に示すように、混在層４５と第１領域Ｒｅ１とが全体として重なる場合を示したが、混在層４５と第１領域Ｒｅ１とは少なくとも一部で重なっていれば、電気抵抗を低下させることができる。
　このような電子部品１０の接続電極は、次に示す方法によって製造できる。図４は、本発明の実施形態に係る接続電極の製造方法を示すフローチャートである。図５（Ａ）、図５（Ｂ）、図５（Ｃ）は、接続電極の製造過程の各状態を示す図である。以下、図４のフローチャートを参照しながら、製造方法を説明する。
　配線電極３０の主面３０２に、蒸着、メッキ、スパッタリング等を用いて、金属膜４０を形成する（Ｓ１１）。次に、金属膜４０の主面４０２に、蒸着、メッキ、スパッタリング等を用いて、金属膜５０を形成する（Ｓ１２）。次に、金属膜５０の主面５０２に、絶縁層である支持枠６０を形成し、さらに、カバー層７０を形成する（Ｓ１３）。
　次に、図５（Ａ）に示すように、カバー層７０における支持枠６０の当接面と反対側の面からレーザ９００によってレーザ光を照射する。レーザ光のエネルギーは、カバー層７０および支持枠６０の研削用に設定されている。レーザ９００によりレーザ光を、カバー層７０に向けて、さらに照射し続けることによって、カバー層７０が削られ、さらに支持枠６０が削られる。これにより、図５（Ｂ）に示すような、カバー層７０および支持枠６０を貫通する貫通孔８００が形成される（Ｓ１４）。
　そして、図５（Ｂ）に示すように、この状態では、貫通孔８００の底に金属膜５０の主面５０２が露出する。
　レーザ９００は、この状態において、金属膜５０側に向けてレーザ光を照射することで、金属膜５０と金属膜４０との接触面付近を局所的に加熱する。この時のレーザ光のエネルギーは、金属膜５０と金属膜４０との接触面付近を、所定温度にするように設定されている。なお、この局所加熱用のエネルギーを、上述の貫通孔８００の形成用のエネルギーと同じにすることも可能である。このレーザ光の照射を所定時間に亘って継続することによって、金属膜５０と金属膜４０との接触面を含むように混在層４５を形成する（Ｓ１５）。混在層４５とは、上述のように、金属膜５０の金属粒子Ｐ５０と金属膜４０の金属粒子Ｐ４０とが、通常の金属膜５０と金属膜４０との積層状態よりも多く混在する層である。
　次に、図５（Ｃ）に示すように、貫通孔８００にＵＢＭ８０を形成する（Ｓ１６）。
　このような製造方法では、ＵＢＭ８０用の貫通孔８００の形成に用いるレーザを、混在層４５の形成に利用できる。したがって、製造工程の簡略化が可能になる。特に、局所加熱用のエネルギーを貫通孔８００の形成用のエネルギーと同じにすることで、製造工程をさらに簡略化できる。
　なお、図１～図３では配線電極上に２つの金属膜が積層されている電子部品１０を示したが、配線電極上に積層される金属膜の数は２つに限られず、３つ以上でもよい。その場合には少なくとも取出し電極（例えば、上述のＵＢＭ８０）に最も近い金属膜と当該最も近い金属膜に当接する金属膜との間に混在層を形成すれば、電気抵抗を低下させて電気特性の劣化を抑制できるという効果が得られる。
　また、図６に示すように、配線電極上に形成される金属膜は、１つであってもよい。図６は、本発明の実施形態に係る接続電極の構成の派生例の一例を示す側面断面図である。
　図６に示す電子部品１０Ａは、図１に示した電子部品１０に対して、密着層となる金属膜４０を省略した点、混在層３５の形成位置において、異なる。電子部品１０Ａの他の構成は、電子部品１０と同様であり、同様の箇所の説明は省略する。
　図６に示すように、電子部品１０Ａでは、金属膜５０は、配線電極３０の主面３０２に形成されている。すなわち、金属膜５０の主面５０１と配線電極３０の主面３０２とは当接している。
　混在層３５は、金属膜５０と配線電極３０とに形成されている。この際、混在層３５は、金属膜５０と配線電極３０との接合界面を含んで形成されている。混在層３５は、配線電極３０を形成する金属粒子（本発明の「第３金属粒子」に対応する。）と、金属膜５０を形成する金属粒子とが混在する層であり、混在層３５の条件は、上述の混在層４５の条件における金属膜４０の金属粒子を配線電極３０の金属粒子に置き換えた場合と同様である。
　混在層３５は、第１領域Ｒｅ１に重なる。より具体的には、混在層３５の少なくとも一部は、ＵＢＭ８０と金属膜５０との接合面に重なる第１領域Ｒｅ１に形成されている。
　配線電極３０に金属膜５０を直接積層する場合においても、配線電極３０における金属膜５０側の主面が酸化して電気抵抗が増大してしまい、当該配線電極３０を備える電子部品１０Ａの電気的特性が悪化するという問題が生じ得る。しかしながら、電子部品１０Ａに示すように、配線電極３０と金属膜５０との間に混在層３５が形成することによって、電気抵抗が低下し、電気特性の劣化を抑制できるという効果が得られる。
１０、１０Ａ：電子部品
２０：基板
３０：配線電極
４０、５０：金属膜
３５、４５：混在層
６０：支持枠
７０：カバー層
８０：アンダーバンプメタル（ＵＢＭ）
８１：はんだボール
２０１、３０１、３０２、４０１、４０２、５０１、５０２：主面
８００：貫通孔
９００：レーザ
Ｐ４０、Ｐ５０：金属粒子
Ｒｅ１：第１領域
Ｒｅ２：第２領域

Claims (13)

  1. 　配線電極の主面に形成された第１金属膜と、
    　前記第１金属膜における前記配線電極への当接面と反対側の面に形成された第２金属膜と、
    　前記第２金属膜における前記第１金属膜への当接面と反対側の面に形成された取出し電極と、
    　前記第１金属膜を形成する第１金属粒子と、前記第２金属膜を形成する第２金属粒子と、が混在する混在層と、
    　を備え、
    　前記第１金属膜、前記第２金属膜および前記取出し電極が並ぶ第１方向に視て、前記混在層の少なくとも一部は、前記取出し電極と前記第２金属膜との接合面に重なる第１領域に形成されている、
    　接続電極。
  2. 　前記混在層は、前記第１方向に視て、前記取出し電極と前記第２金属膜との接合面に重ならない第２領域に形成されていない、
    　請求項１に記載の接続電極。
  3. 　前記混在層は、前記第１方向に視て、前記取出し電極と前記第２金属膜との接合面に重ならない第２領域の一部に形成されており、
    　前記第２領域において前記混在層が形成された一部の領域は、前記第２領域において前記混在層が形成されていない他部の領域より小さい、請求項１に記載の接続電極。
  4. 　前記混在層は、前記第１金属膜と前記第２金属膜との当接面に平行な第２方向に視て、前記第２領域を挟んで前記第１領域側と反対側にある第３領域に形成されていない、
    　請求項３に記載の接続電極。
  5. 　前記取出し電極の少なくとも一部を内部に備え、かつ、前記第２金属膜上に形成された支持枠をさらに備え、
    　前記第２領域は、前記第１方向に視て前記支持枠と重なる領域であり、
    　前記第３領域は、前記第１方向に視て前記支持枠と重ならない領域である、
    　請求項４に記載の接続電極。
  6. 　前記第２金属膜は、前記第１金属膜よりも酸化し難い、
    　請求項１乃至請求項５のいずれかに記載の接続電極。
  7. 　前記混在層は、
    　前記第１方向において、前記第２金属膜における前記取出し電極への当接面に達していない、
    　請求項１乃至請求項６のいずれかに記載の接続電極。
  8. 　前記混在層は、
    　前記第１方向において、前記第１金属膜における前記配線電極への当接面に達していない、
    　請求項７に記載の接続電極。
  9. 　前記混在層は、前記配線電極に達している、
    　請求項１乃至請求項７のいずれかに記載の接続電極。
  10. 　前記配線電極の抵抗率は、前記第１金属膜の抵抗率および前記第２金属膜の抵抗率よりも低い、
    　請求項１乃至請求項９のいずれかに記載の接続電極。
  11. 　前記第１金属粒子は、チタン、ニッケル、または、クロムを含み、
    　前記第２金属粒子は、プラチナ、または、金を含み、
    　前記配線電極を構成する第３金属粒子は、銅、または、アルミニウムを含む、
    　請求項１乃至請求項１０のいずれかに記載の接続電極。
  12. 　配線電極の主面に形成された第１金属膜と、
    　前記第１金属膜における前記配線電極への当接面と反対側の面に形成された取出し電極と、
    　前記第１金属膜を形成する第１金属粒子と、前記配線電極を形成する第３金属粒子と、が混在する混在層と、
    　を備え、
    　前記第１金属膜および前記取出し電極が並ぶ第１方向に視て、前記混在層の少なくとも一部は、前記取出し電極と前記第１金属膜との接合面に重なる第１領域に形成されている、
    　接続電極。
  13. 　配線電極の主面に第１金属膜を形成する工程と、
    　前記第１金属膜における前記配線電極への当接面と反対側の面に第２金属膜を形成する工程と、
    　前記第２金属膜における前記第１金属膜への当接面と反対側の面の少なくとも一部を覆う絶縁層を形成する工程と、
    　前記絶縁層にレーザ光を照射して、前記第２金属膜が露出する貫通孔を形成する工程と、
    　前記貫通孔を形成する前記レーザ光を、前記第２金属膜と前記第１金属膜に照射して加熱することで、前記第１金属膜を構成する第１金属粒子と、前記第２金属膜を構成する第２金属粒子と、が混在する混在層を形成する工程と、
    　前記貫通孔に取出し電極を形成する工程と、
    　を有する、
    　接続電極の製造方法。
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